CN106531815A - Visible light sensor - Google Patents
Visible light sensor Download PDFInfo
- Publication number
- CN106531815A CN106531815A CN201610868664.9A CN201610868664A CN106531815A CN 106531815 A CN106531815 A CN 106531815A CN 201610868664 A CN201610868664 A CN 201610868664A CN 106531815 A CN106531815 A CN 106531815A
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- Prior art keywords
- infrared
- visible light
- light
- light sensor
- ultraviolet
- Prior art date
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- 239000000463 material Substances 0.000 claims abstract description 53
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 claims abstract description 42
- 239000003822 epoxy resin Substances 0.000 claims abstract description 22
- 229920000647 polyepoxide Polymers 0.000 claims abstract description 22
- 239000007788 liquid Substances 0.000 claims abstract description 16
- 239000003795 chemical substances by application Substances 0.000 claims abstract description 13
- 150000008064 anhydrides Chemical class 0.000 claims abstract description 10
- 238000001914 filtration Methods 0.000 claims abstract description 4
- 239000000843 powder Substances 0.000 claims description 19
- 238000005538 encapsulation Methods 0.000 claims description 15
- 239000013078 crystal Substances 0.000 claims description 9
- 239000000203 mixture Substances 0.000 claims description 7
- 238000012856 packing Methods 0.000 claims description 7
- 239000006185 dispersion Substances 0.000 claims description 3
- 238000004088 simulation Methods 0.000 claims description 3
- 238000003756 stirring Methods 0.000 claims description 3
- 238000003780 insertion Methods 0.000 claims description 2
- 230000037431 insertion Effects 0.000 claims description 2
- 239000000126 substance Substances 0.000 claims description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims 1
- 230000005611 electricity Effects 0.000 claims 1
- 238000009738 saturating Methods 0.000 claims 1
- 230000035945 sensitivity Effects 0.000 abstract description 6
- 238000004806 packaging method and process Methods 0.000 abstract description 3
- 230000003321 amplification Effects 0.000 abstract 1
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 238000004040 coloring Methods 0.000 abstract 1
- 238000003199 nucleic acid amplification method Methods 0.000 abstract 1
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 6
- 229930185605 Bisphenol Natural products 0.000 description 4
- 239000004593 Epoxy Substances 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000002834 transmittance Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- ZYUVGYBAPZYKSA-UHFFFAOYSA-N 5-(3-hydroxybutan-2-yl)-4-methylbenzene-1,3-diol Chemical compound CC(O)C(C)C1=CC(O)=CC(O)=C1C ZYUVGYBAPZYKSA-UHFFFAOYSA-N 0.000 description 1
- 102100037922 Disco-interacting protein 2 homolog A Human genes 0.000 description 1
- 101000805876 Homo sapiens Disco-interacting protein 2 homolog A Proteins 0.000 description 1
- 101000955093 Homo sapiens WD repeat-containing protein 3 Proteins 0.000 description 1
- 244000178870 Lavandula angustifolia Species 0.000 description 1
- 235000010663 Lavandula angustifolia Nutrition 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 150000008065 acid anhydrides Chemical class 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- NHADDZMCASKINP-HTRCEHHLSA-N decarboxydihydrocitrinin Natural products C1=C(O)C(C)=C2[C@H](C)[C@@H](C)OCC2=C1O NHADDZMCASKINP-HTRCEHHLSA-N 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 239000001102 lavandula vera Substances 0.000 description 1
- 235000018219 lavender Nutrition 0.000 description 1
- 229920002521 macromolecule Polymers 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
- C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
- C08G59/40—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the curing agents used
- C08G59/42—Polycarboxylic acids; Anhydrides, halides or low molecular weight esters thereof
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L63/00—Compositions of epoxy resins; Compositions of derivatives of epoxy resins
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/09—Devices sensitive to infrared, visible or ultraviolet radiation
Abstract
The invention provides a visible light sensor comprising a wafer and a packaging unit coating the periphery of the wafer. A photosensitive circuit is processed on the wafer. The packaging unit is made of a light-transmittable high molecular material; and infrared ultraviolet cut-off colouring agent with the mass ratio of 1% to 5%, liquid bisphenol A type epoxy resin with the mass ratio of 45% to 49%, and liquid anhydride type curing agent with the mass ratio of 50% are stirred uniformly at a normal temperature to prepare the light-transmittable high molecular material. The photosensitive circuit includes two photodiodes, an operational amplifier and a filter. Light passes through the light-transmittable high molecular material and thus infrared light and ultraviolet light are filtered; visible light passing through the light-transmittable high molecular material irradiates the photodiodes of the wafer; the photodiodes form unidirectional voltages; and after amplification by the operational amplifier and filtering by the filter on the voltages, a stable voltage output is formed. The visible light sensor has advantages of high sensitivity precision and low cost.
Description
Technical field
The present invention relates to visible light sensor technical field, specifically refers to a kind of encapsulation using light-permeable macromolecular material
Visible light sensor.
Background technology
Visible light sensor is the element that the Strength Changes of a straight grip visible ray are converted into voltage or change in voltage.Its master
It is applied to backlight and adjusts the fields such as television set, computer monitor, LED-backlit, mobile phone and digital camera.
But the material that the encapsulation of visible light sensor is adopted at present, the attenuation accuracy of the infrared ray and ultraviolet of its material is simultaneously
It is not very high, and the high cost of the material.
The content of the invention
In order to solve the above problems, the present invention proposes a kind of visible light sensor, and its encapsulation uses printing opacity macromolecule
Material so that the sensitivity of the visible light sensor and degree of accuracy are more preferable, and its packaging cost bottom.
What the present invention was achieved through the following technical solutions：
The present invention proposes a kind of visible light sensor, including wafer and the encapsulation for being coated on wafer periphery, adds on the wafer
Work has photosensitive circuit；
The encapsulation uses light-permeable macromolecular material；The light-permeable macromolecular material be by mass ratio be 1%-5%
Infrared and ultraviolet cut-off stain, mass ratio are 50% liquid for the bisphenol A type epoxy resin and mass ratio of the liquid of 45%-49%
Anhydride type curing agent stirs at normal temperatures and makes；The photosensitive circuit includes two photodiodes, an operation amplifier
Device and a filter；
Light filters out infrared light and ultraviolet light through the light-permeable macromolecular material, through the visible of light-permeable macromolecular material
On the photodiode on wafer, photodiode forms unidirectional voltage to light irradiation, and voltage is put through operational amplifier
The filtration of big and filter forms stable voltage output.
Further, the crystal column surface plated film；The mass percent of each composition of the light-permeable macromolecular material point
It is not：Infrared and ultraviolet cut-off stain is 1%, and bisphenol A type epoxy resin is 49%, and anhydride type curing agent is 50%.
Further, the crystal column surface not plated film；The mass percent of each composition of the light-permeable macromolecular material
Respectively：Infrared and ultraviolet cut-off stain is 5%, and bisphenol A type epoxy resin is 45%, and anhydride type curing agent is 50%.
Further, the infrared and ultraviolet cut-off stain is the bisphenol type epoxy for being ended powder and liquid by infrared and ultraviolet
Resin is mixed at normal temperatures by certain mass ratio；Wherein, the infrared and ultraviolet cut-off powder is contaminated in infrared and ultraviolet cut-off
Mass ratio in toner is 5%-6%.
Further, the infrared and ultraviolet cut-off powder is exactly the proprietary nanoparticulate substances of dispersion doping in ethylene glycol；Its
In organic carrier, the ultraviolet band below 400nm wavelength is ended, infrared band more than 700nm wavelength is ended.
Further, the outfan of one of photodiode is connected to the in-phase input end of the operational amplifier,
The input of another photodiode is connected to the inverting input of the operational amplifier, the output of the operational amplifier
End is connected to the filter.
Further, the visible light sensor is for numeral output formula or with any one in simulation output formula.
Further, the packing forms of the visible light sensor are direct insertion, can be DIP-2, DIP-3 or
Any one in DIP-4；Its diameter is any one in 3mm, 5mm or 8mm.
Further, the packing forms of the visible light sensor are SMD, can be EMC, SMC 3131 or
Any one in 3939.
Beneficial effects of the present invention：
1. the encapsulation of the visible light sensor in the present invention uses the macromolecular material of light-permeable, its similar human eye
550nm centers response curve, reaches the visible light-transmissive standard for realizing 400nm-700nm, and the infrared ray for more than 700nm reaches
To the function of cut-off, the ultraviolet for below 400nm reaches the function of cut-off.So that the visible light sensing in the present invention
The sensitivity of device and degree of accuracy are more preferable.
2. the visible light sensor of the present invention is in the crystal column surface plated film, red in the light-permeable macromolecular material
The mass ratio of outer ultraviolet cut-on stain is 1%, and the mass ratio of the bisphenol A type epoxy resin of liquid is 49%.The present embodiment passes through
Then the mass ratio of the infrared and ultraviolet cut-off stain in the light-permeable macromolecular material is reduced to originally by crystal column surface plated film
1/5th, so that the coefficient printing opacity response curve essence of light-permeable macromolecular material after formation and wafer
Du Genggao, so that the sensitivity of the visible light sensor and degree of accuracy are higher.
3., in the present invention, the effect that bisphenol A type epoxy resin described in stain serves as solvent is ended in infrared and ultraviolet, it is double
Phenol A type epoxy resin has viscosity high, the fast characteristic of curing rate, and infrared and ultraviolet cut-off powder has cut-off infrared ray and ultraviolet
The function of line, infrared and ultraviolet cut-off powder melts in the presence of bisphenol A type epoxy resin, and be entrained in bisphenol type epoxy
Formed in resin in infrared and ultraviolet cut-off stain.Therefore infrared and ultraviolet cut-off stain is that one kind has infrared cut of light and purple
The material of outer smooth cutoff function, its stability are very good, convenient to transport and preserve.
4. the composition of the light-permeable macromolecular material in the present invention is few, and formula is simple so that the visible light sensor
Cost bottom.
Description of the drawings
During Fig. 1 is light-permeable macromolecular material of the present invention, infrared and ultraviolet ends quality of the powder in light-permeable macromolecular material
When percentage ratio is different, chart of the light-permeable macromolecular material to the transmitance of visible ray.
Fig. 2 is the circuit theory diagrams of the visible light sensor of the present invention.
Fig. 3 is the appearance schematic diagram of the visible light sensor of the present invention.
Specific embodiment
For clearer, complete explanation technical scheme, the invention will be further described below in conjunction with the accompanying drawings.
Embodiment one：
The present embodiment proposes a kind of visible light sensor, including wafer and the encapsulation 4 for being coated on wafer periphery, on the wafer
It is machined with photosensitive circuit.
In the present embodiment, Fig. 2 is refer to, the photosensitive circuit includes two photodiodes, 1, operational amplifier
2 and a filter 3；Specifically, the outfan of one of photodiode 1 is connected to the homophase of the operational amplifier 2
Input, the input of another photodiode 1 are connected to the inverting input of the operational amplifier 2, and the computing is put
The outfan of big device 2 is connected to the filter 3.
In the present embodiment, the crystal column surface not plated film.
The encapsulation 4 uses light-permeable macromolecular material；The light-permeable macromolecular material be by mass ratio be 5%
Infrared and ultraviolet cut-off stain, the bisphenol A type epoxy resin of the liquid that mass ratio is 45% and acid that mass ratio is 50% liquid
Acid anhydride type firming agent stirs at normal temperatures and makes.
In the present embodiment, the specification of the bisphenol A type epoxy resin is WL-800A-15, and which is that a kind of lavender is sticky
Body.
In the present embodiment, the specification of the anhydride type curing agent is WL-800B-15, is a kind of colourless transparent liquid.
In the present embodiment, the infrared and ultraviolet cut-off stain is the bisphenol A-type for being ended powder and liquid by infrared and ultraviolet
Epoxy resin is mixed at normal temperatures by certain mass ratio；Wherein, the infrared and ultraviolet cut-off powder is cut in infrared and ultraviolet
Only the mass ratio in stain is 6%.
In the present embodiment, the infrared and ultraviolet cut-off powder is exactly the proprietary nanoparticle thing of dispersion doping in ethylene glycol
Matter；Which ends to the ultraviolet band below 400nm wavelength in organic carrier, and infrared band more than 700nm wavelength is cut
Only.
End the effect that bisphenol A type epoxy resin described in stain serves as solvent, bisphenol type epoxy tree in infrared and ultraviolet
Fat has viscosity high, the fast characteristic of curing rate, and infrared and ultraviolet cut-off powder has the function of cut-off infrared ray and ultraviolet, institute
State infrared and ultraviolet cut-off powder to melt in the presence of bisphenol A type epoxy resin, and form red in being entrained in bisphenol A type epoxy resin
In outer ultraviolet cut-on stain.Therefore infrared and ultraviolet cut-off stain is that one kind has infrared cut of light and ultraviolet light cutoff function
Material, its stability is very good, convenient transport and preserves.
It is well known that WL-800A/B-15 epoxy resin is with WL-800A-15 as host, WL-800B-15 is firming agent,
Mix.It has mixing viscosity it is low, deaeration is good, room temperature can validity period it is long, intermediate temperature setting speed is fast.Solidfied material printing opacity
Property it is uniform, the feature such as invariant color is the special encapsulating material of light emitting diode.The characteristics of present invention is using WL-800A/B-15,
Particularly the uniform characteristic of solidfied material light transmission, adds infrared and ultraviolet to cut in bisphenol A type epoxy resin and anhydride type curing agent
Only stain, so as to obtain the light-permeable macromolecular material of the present invention, the similar human eye of light-permeable macromolecular material of the present invention
550nm centers response curve, reaches the visible light-transmissive standard for realizing 400nm-700nm.
In the present embodiment, Fig. 1 is refer to, when the light-permeable macromolecular material is made into according to above-mentioned composition and proportioning,
The mass percent of the gross mass that i.e. described infrared and ultraviolet cut-off powder accounts for the light-permeable macromolecular material is 5% × 6%=0.3%
When, to the light transmittance of light as shown by curve 1, the light-permeable macromolecular material to wavelength is the light-permeable macromolecular material
The visible light transmissivity of 400nm-700nm is greater than 0, and for wavelength is in cut-off state less than the ultraviolet light of 400nm
, while the infrared light to wavelength more than 700nm is also in cut-off state.As can be seen here, the visible ray in the present embodiment
The macromolecular material of the light-permeable of the encapsulation of sensor, the 550nm centers response curve of its similar human eye, reaches and realizes 400nm-
The visible light-transmissive standard of 700nm, the infrared ray for more than 700nm reach the function of cut-off, ultraviolet for below 400nm
Line reaches the function of cut-off.So that the sensitivity of visible light sensor in the present invention and degree of accuracy are more preferable.
When the visible light sensor of the present invention works, light filters out infrared light and purple through the light-permeable macromolecular material
Outer light, through light-permeable macromolecular material radiation of visible light on the photodiode 1 on wafer, photodiode 1 is formed
Unidirectional voltage, voltage amplifies through operational amplifier 2 and the filtration of filter 3 forms stable voltage output.
Fig. 3 is refer to, the visible light sensor of the present embodiment is packaged into the form of DIP2, and which is from from the point of view of profile including shell
Encapsulation 4, power supply PIN 5 and voltage output PIN 6.The encapsulation 4 includes big cylinder 41 and small column 42, the small column 42
Extended downwardly from the bottom of the big cylinder 41 downward vertically, the centrage of the big cylinder 41 and small column 42 overlaps；It is described
The diameter and height of big cylinder 41 is 3mm, a diameter of 3.9mm of the small column 42, a height of 1mm；The small column 42
The face excision that one side is located by a bus of the big cylinder 41.
Photosensitive circuit on the wafer and wafer is located at the inside of the encapsulation 4.The power supply PIN 5 and voltage
Output PIN 6 is one end and is connected with the circuit in encapsulation 4, and the other end extends vertically downward from the lower end of the small column 42.
Wherein, the length of the voltage PIN 5 is longer than the length of the voltage output PIN 6.
In the present embodiment, the processing technology of the visible light sensor is made as follows：
Step 1：The processing technology for first pressing LED processes photosensitive circuit on wafer；
Step 2：The infrared and ultraviolet that mass ratio is 5% is ended into the bisphenol A type epoxy resin of stain, the liquid that mass ratio is 45%
And the anhydride type curing agent that mass ratio is 50% liquid is stirred at normal temperatures；
Step 3：The wafer is fixed in a mold, then mixed light-permeable macromolecular material is poured in mould, die bond；
Step 4：Bonding wire, then encapsulating.
In the present embodiment, the visible light sensor is numeral output formula.The visible ray is passed in other embodiments
Sensor can be same simulation output formula.
In the present embodiment, the packing forms of the visible light sensor are DIP-2 forms, its a diameter of 3mm.
In other embodiment, the packing forms of the visible light sensor can be arbitrary in DIP-2, DIP-3 or DIP-4
Kind；Its diameter can also be any one in 3mm, 5mm or 8mm.
In other embodiments, the packing forms of the visible light sensor can also be SMD, can be EMC,
Any one in SMC 3131 or 3939.Depending on concrete condition according to design.
Embodiment two：
The present embodiment is essentially identical with embodiment one, and its difference is：
Wherein, the infrared and ultraviolet cut-off powder is 5% in the mass ratio that infrared and ultraviolet ends in stain, then the infrared purple
The mass percent of the gross mass that outer cut-off powder accounts for the light-permeable macromolecular material is 5% × 5%=0.25%, the light-permeable height
Molecular material is to the light transmittance of light as shown in the curve 2 in Fig. 1.
Embodiment three：
The present embodiment is essentially identical with embodiment one or embodiment two, and its difference is：
Wherein, the infrared and ultraviolet cut-off powder is 5.5% in the mass ratio that infrared and ultraviolet ends in stain, then described infrared
Ultraviolet cut-on powder account for the gross mass of the light-permeable macromolecular material mass percent be 5% × 5.5%=0.275%, it is described can
Between curve 2 and curve 1 of the printing opacity macromolecular material to the light transmittance of light in Fig. 1.
Example IV：
The present embodiment is essentially identical with embodiment one, and its difference is：
The crystal column surface plated film.The mass ratio of the infrared and ultraviolet cut-off stain in the light-permeable macromolecular material is 1%,
The mass ratio of the bisphenol A type epoxy resin of liquid is 49%.The present embodiment passes through crystal column surface plated film, then by the light-permeable
The mass ratio of the infrared and ultraviolet cut-off stain in macromolecular material is reduced to original 1/5th, so that after formation
Light-permeable macromolecular material is higher with the coefficient printing opacity response curve precision of wafer, so that the visible light sensing
The sensitivity of device and degree of accuracy are higher.
Certainly, the present invention can also have other numerous embodiments, based on present embodiment, one of ordinary skill in the art
The obtained other embodiment on the premise of any creative work is not made, belongs to the scope protected by the present invention.
Claims (9)
1. a kind of visible light sensor, including wafer and the encapsulation for being coated on wafer periphery, are machined with photosensitive electricity on the wafer
Road；Characterized in that,
The encapsulation uses light-permeable macromolecular material；The light-permeable macromolecular material be by mass ratio be 1%-5%
Infrared and ultraviolet cut-off stain, mass ratio are 50% liquid for the bisphenol A type epoxy resin and mass ratio of the liquid of 45%-49%
Anhydride type curing agent stirs at normal temperatures and makes；The photosensitive circuit includes two photodiodes, an operation amplifier
Device and a filter；
Light filters out infrared light and ultraviolet light through the light-permeable macromolecular material, through the visible of light-permeable macromolecular material
On the photodiode on wafer, photodiode forms unidirectional voltage to light irradiation, and voltage is put through operational amplifier
The filtration of big and filter forms stable voltage output.
2. visible light sensor according to claim 1, it is characterised in that the crystal column surface plated film；The light-permeable
The mass percent of each composition of macromolecular material is respectively：Infrared and ultraviolet cut-off stain is 1%, and bisphenol A type epoxy resin is
49%, anhydride type curing agent is 50%.
3. visible light sensor according to claim 1, it is characterised in that the crystal column surface not plated film；It is described can be saturating
The mass percent of each composition of light macromolecular material is respectively：Infrared and ultraviolet cut-off stain is 5%, bisphenol A type epoxy resin
For 45%, anhydride type curing agent is 50%.
4. described visible light sensor according to claim 1, it is characterised in that the infrared and ultraviolet cut-off stain be by
Infrared and ultraviolet ends powder and the bisphenol A type epoxy resin of liquid is mixed at normal temperatures by certain mass ratio；Wherein, institute
It is 5%-6% that infrared and ultraviolet cut-off powder is stated in the mass ratio that infrared and ultraviolet ends in stain.
5. visible light sensor according to claim 1, it is characterised in that the infrared and ultraviolet cut-off powder is exactly in second two
The proprietary nanoparticulate substances of dispersion doping in alcohol；Which ends to the ultraviolet band below 400nm wavelength in organic carrier, right
Infrared band cut-off more than 700nm wavelength.
6. visible light sensor according to claim 1, it is characterised in that the outfan of one of photodiode connects
The in-phase input end of the operational amplifier is connected to, the input of another photodiode is connected to the operational amplifier
Inverting input, the outfan of the operational amplifier are connected to the filter.
7. visible light sensor according to claim 1, it is characterised in that the visible light sensor is numeral output formula
Or with any one in simulation output formula.
8. visible light sensor according to claim 1, it is characterised in that the packing forms of the visible light sensor are
It is direct insertion, can be any one in DIP-2, DIP-3 or DIP-4；Its diameter is any one in 3mm, 5mm or 8mm.
9. visible light sensor according to claim 1, it is characterised in that the packing forms of the visible light sensor are
It is SMD, can be any one in EMC, SMC 3131 or 3939.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610868664.9A CN106531815A (en) | 2016-09-30 | 2016-09-30 | Visible light sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610868664.9A CN106531815A (en) | 2016-09-30 | 2016-09-30 | Visible light sensor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106531815A true CN106531815A (en) | 2017-03-22 |
Family
ID=58344724
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610868664.9A Pending CN106531815A (en) | 2016-09-30 | 2016-09-30 | Visible light sensor |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110930945A (en) * | 2019-12-20 | 2020-03-27 | 西安易朴通讯技术有限公司 | Method, device and system for adjusting brightness of display screen |
| CN112398970A (en) * | 2019-07-31 | 2021-02-23 | 北京小米移动软件有限公司 | Optical sensor, mobile terminal and visible light intensity detection method |
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