CN106531756A - Detector anode device - Google Patents
Detector anode device Download PDFInfo
- Publication number
- CN106531756A CN106531756A CN201610963911.3A CN201610963911A CN106531756A CN 106531756 A CN106531756 A CN 106531756A CN 201610963911 A CN201610963911 A CN 201610963911A CN 106531756 A CN106531756 A CN 106531756A
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- China
- Prior art keywords
- plate
- anode
- signal
- array
- asic chip
- Prior art date
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Links
- 238000003491 array Methods 0.000 claims description 6
- 238000001514 detection method Methods 0.000 abstract description 4
- 238000010586 diagram Methods 0.000 description 7
- 238000000034 method Methods 0.000 description 4
- 230000006870 function Effects 0.000 description 3
- 230000008859 change Effects 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14634—Assemblies, i.e. Hybrid structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14641—Electronic components shared by two or more pixel-elements, e.g. one amplifier shared by two pixel elements
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Measurement Of Radiation (AREA)
- Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
Abstract
An embodiment of the invention provides a detector anode device which comprises the components of a first anode board which is provided with a first signal array; a second anode board of which the area is smaller than that of the first anode board, wherein the second anode board is arranged in the first anode board and has a second signal array; a first ASIC chip which is connected with the first anode board and detects a first signal that is generated by the first anode board when electrons impact on the first anode board; a second ASIC chip which is connected with the second anode board and detects a second signal that is generated by the second anode board when the electrons impact on the second anode board; and an electronic processor which is connected with the first ASIC chip and the second ASIC chip and acquires an impact position of the electrons on the first anode board or the second anode board according to the first signal and the second signal. According to the detector anode device provided by the invention, two different anode boards are utilized for realizing electronic position detection with different precisions.
Description
Technical field
The present invention relates to a kind of anode assembly, more particularly to a kind of detector anode assembly.
Background technology
At present, the positive plate of existing detector only has one piece, no matter which kind of resolution ratio, thus can only be into a resolution ratio
Image, if necessary to change resolution ratio, can only just use other detectors instead, because cannot carry out the positive plate of detector more
Change.
Therefore, the setting underaction of existing anode assembly.
The content of the invention
The purpose of the present invention is the defect for prior art, there is provided a kind of detector anode assembly, different using two pieces
Positive plate, realize different accuracy electronic position detection.
For achieving the above object, a kind of detector anode assembly, the detector anode dress are embodiments provided
Put including：
First anode plate, the first anode plate have the first signal array；
Second plate plate, the area of the second plate plate are less than first anode plate, and are located at the first anode plate
Interior, the second plate plate has secondary signal array；
First asic chip, is connected with the first anode plate, when electronics is beaten in the first anode plate, detects institute
State the first signal of first anode plate generation；
Second asic chip, is connected with the second plate plate, when electronics is beaten in the second plate plate, detects institute
State the secondary signal of second plate plate generation；
Electronics processor, is connected with first asic chip and the second asic chip, according to first signal
Electronics is obtained with secondary signal and beats the position in the first anode plate or second plate plate.
Further, first signal array is N M array, and N is the first array line number, and M is the first array columns.
Further, first asic chip has N+M roads signal input.
Further, the secondary signal array is P × Q arrays, and P is the second array line number, and Q is the second array columns.
Further, second asic chip has P+Q roads signal input.
Further, the electronics processor obtains the row of the electronics with specific reference to first signal and secondary signal
Position and column position, beat the position in the first anode plate or second plate plate so as to obtain the electronics.
Further, the electronics processor includes FPGA, is connected with first asic chip and the second asic chip
Connect.
Embodiment of the present invention detector anode assembly, using two pieces of different positive plates, realizes the electronics of different accuracy
Detect position.
Description of the drawings
Fig. 1 is the schematic diagram of detector anode assembly provided in an embodiment of the present invention；
Fig. 2A is one of electronic array schematic diagram of detector anode assembly provided in an embodiment of the present invention；
Fig. 2 B are the two of the electronic array schematic diagram of detector anode assembly provided in an embodiment of the present invention；
Fig. 2 C are the three of the electronic array schematic diagram of detector anode assembly provided in an embodiment of the present invention.
Specific embodiment
Below by drawings and Examples, technical scheme is described in further detail.
Fig. 1 is the schematic diagram of detector anode assembly provided in an embodiment of the present invention, as illustrated, the embodiment of the present invention
Detector anode assembly includes：First anode plate 11, second plate plate 12, the first special IC (Application
Specific Integrated Circuits, ASIC) chip 21, the second asic chip 22 and electronics processor 3.
First anode plate 11 has the first signal array.The area of second plate plate 12 is less than first anode plate 11, and
In first anode plate 11, second plate plate 12 has secondary signal array.
First asic chip 21 is connected with first anode plate 11, when electronics is beaten in the first anode plate 11, detection
The first signal that first anode plate 11 is produced；Second asic chip 22 is connected with second plate plate 12, when electronics is beaten second
During positive plate 12, the secondary signal that second plate plate 12 is produced is detected.
Electronics processor 3 is connected with the first asic chip 21 and the second asic chip 22, according to the first signal and
Binary signal obtains electronics and beats in the position of first anode plate 11 or second plate plate 12.
Specifically, the first array of first anode plate 11 is N M array, and N is the first array line number, and M is the first array column
Number.Optionally, M and N are 64.Because the first asic chip 21 needs to detect that electronics is beaten in the position of the first array, the
One asic chip 21 is exported with N+M roads, that is, 64+64 roads signal output needs the first asic chip 21 to process.
In the same manner, the second array of second plate plate 12 is P × Q arrays, and P is the second array line number, and Q is the second array column
Number.Optionally, P and Q are 64.Because the second asic chip 22 needs to detect that electronics is beaten in the position of the second array, the
Two asic chips 22 are exported with P+Q roads, that is, 64+64 roads signal output needs the second asic chip 22 to process.
Electronics processor 3 is put with specific reference to the line position that the first signal and secondary signal obtain electronics and column position, so as to
Obtain electronics and beat the position in the first anode plate or second plate plate.
Fig. 2A and Fig. 2 B are respectively the electronic array schematic diagram of detector anode assembly provided in an embodiment of the present invention, such as scheme
It is shown, for example, electronics beat array (4,4) on, then the 4 of the 4 and columns X of array line number Y can all produce signal, by X4, Y4
Produce the first signal come determine electronics beat pad (4,4) on, it follows that electronics is beaten on first anode plate 21.
Fig. 2 C are the three of the electronic array schematic diagram of detector anode assembly provided in an embodiment of the present invention.For example, electronics
Beat array (6,6) on, then the 6 of the 6 and columns X of array line number Y can all produce signal, by X6, Y6 produce secondary signal
Come determine electronics beat pad (6,6) on, it follows that electronics is beaten on second plate plate 22.
Optionally, electronics processor 3 includes field programmable gate array (Field-Programmable Gate
Array, FPGA), it is connected with the first asic chip and the second asic chip.The area of first anode plate 11 is more than second plate
Plate 12, optional first anode board size are (200X200) mm, and the size of second plate plate is (43.3X43.3) mm, and first is positive
The number of arrays of pole plate is identical with the number of arrays of second plate plate, is 64X64=128 roads, second plate plate 12 in unit area
Pixel for 11 pixel of first anode plate 4.6 times of 200/43.3 ≈, when an equal amount of hot spot is respectively radiated to first
When positive plate 11 and second plate plate 12, it is positive first that the pixel that hot spot can be covered on second plate plate 12 is about hot spot
Pole plate can cover 4.6 times of pixel, and the precision of second plate plate 32 is 4.6 times of first anode plate precision, so as to reach
The purpose of same detector different accuracy electronic position detection is arrived.
Professional should further appreciate that, with reference to each example of the embodiments described herein description
Unit and algorithm steps, can with electronic hardware, computer software or the two be implemented in combination in, it is hard in order to clearly demonstrate
The interchangeability of part and software, generally describes the composition and step of each example in the above description according to function.
These functions actually with hardware or software mode performing, depending on the application-specific and design constraint of technical scheme.
Professional and technical personnel can use different methods to realize to each specific application described function, but this realization
It is not considered that beyond the scope of this invention.
Hardware, computing device can be used with reference to the method for the embodiments described herein description or the step of algorithm
Software module, or the combination of the two is implementing.Software module can be placed in random access memory (RAM), internal memory, read-only storage
(ROM), electrically programmable ROM, electrically erasable ROM, register, hard disk, moveable magnetic disc, CD-ROM or technical field
In any other form of storage medium well known to interior.
Above-described specific embodiment, has been carried out further to the purpose of the present invention, technical scheme and beneficial effect
Describe in detail, the be should be understood that specific embodiment that the foregoing is only the present invention is not intended to limit the present invention
Protection domain, all any modification, equivalent substitution and improvements within the spirit and principles in the present invention, done etc. all should include
Within protection scope of the present invention.
Claims (7)
1. a kind of detector anode assembly, it is characterised in that the detector anode assembly includes：
First anode plate, the first anode plate have the first signal array；
Second plate plate, the area of the second plate plate are less than first anode plate, and are located in the first anode plate, institute
State second plate plate and there is secondary signal array；
First application-specific integrated circuit ASIC chip, is connected with the first anode plate, when electronics is beaten in the first anode plate
When, detect the first signal that the first anode plate is produced；
Second asic chip, is connected with the second plate plate, when electronics is beaten in the second plate plate, detects described the
The secondary signal that two positive plates are produced；
Electronics processor, is connected with first asic chip and the second asic chip, according to first signal and
Binary signal obtains electronics and beats the position in the first anode plate or second plate plate.
2. detector anode plate device according to claim 1, it is characterised in that first signal array is N × M battle arrays
Row, N are the first array line number, and M is the first array columns.
3. detector anode plate device according to claim 2, it is characterised in that first asic chip has N+M
Road signal input.
4. detector anode plate device according to claim 1, it is characterised in that the secondary signal array is P × Q battle arrays
Row, P are the second array line number, and Q is the second array columns.
5. detector anode plate device according to claim 4, it is characterised in that second asic chip has P+Q
Road signal input.
6. detector anode plate device according to claim 1, it is characterised in that the electronics processor with specific reference to
First signal and secondary signal obtain the line position of the electronics and put and column position, beat described so as to obtain the electronics
The position of one positive plate or second plate plate.
7. detector anode plate device according to claim 1, it is characterised in that the electronics processor includes scene
Programmable gate array FPGA, is connected with first asic chip and the second asic chip.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610963911.3A CN106531756B (en) | 2016-10-28 | 2016-10-28 | Detector anode assembly |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610963911.3A CN106531756B (en) | 2016-10-28 | 2016-10-28 | Detector anode assembly |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN106531756A true CN106531756A (en) | 2017-03-22 |
| CN106531756B CN106531756B (en) | 2018-05-18 |
Family
ID=58326958
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610963911.3A Expired - Fee Related CN106531756B (en) | 2016-10-28 | 2016-10-28 | Detector anode assembly |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106531756B (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008227430A (en) * | 2007-03-16 | 2008-09-25 | Sharp Corp | Photodetector for position detection, production process thereof, sensor, and electronic instrument |
| CN103298793A (en) * | 2010-11-29 | 2013-09-11 | 埃吉斯药物股份公开有限公司 | Method for the preparation of high-purity pharmaceutical intermediates |
| CN206339245U (en) * | 2016-10-28 | 2017-07-18 | 中国计量科学研究院 | Detector anode assembly |
-
2016
- 2016-10-28 CN CN201610963911.3A patent/CN106531756B/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008227430A (en) * | 2007-03-16 | 2008-09-25 | Sharp Corp | Photodetector for position detection, production process thereof, sensor, and electronic instrument |
| CN103298793A (en) * | 2010-11-29 | 2013-09-11 | 埃吉斯药物股份公开有限公司 | Method for the preparation of high-purity pharmaceutical intermediates |
| CN206339245U (en) * | 2016-10-28 | 2017-07-18 | 中国计量科学研究院 | Detector anode assembly |
Also Published As
| Publication number | Publication date |
|---|---|
| CN106531756B (en) | 2018-05-18 |
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Granted publication date: 20180518 Termination date: 20211028 |
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| CF01 | Termination of patent right due to non-payment of annual fee |