CN106527574A - Reference voltage source for digital/analog converter and electronic device - Google Patents
Reference voltage source for digital/analog converter and electronic device Download PDFInfo
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- CN106527574A CN106527574A CN201510574380.4A CN201510574380A CN106527574A CN 106527574 A CN106527574 A CN 106527574A CN 201510574380 A CN201510574380 A CN 201510574380A CN 106527574 A CN106527574 A CN 106527574A
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- reference voltage
- voltage source
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- current mirror
- bipolar transistor
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Abstract
The invention provides a reference voltage source for a digital/analog converter. The reference voltage source comprises a current mirror circuit, an amplifier, a first bipolar transistor, a second bipolar transistor, a negative temperature coefficient compensation circuit and an output resistor with adjustable resistance. The current mirror circuit comprises at least one output end. The amplifier is coupled to a current mirror and provides bias voltage for the current mirror. The first bipolar transistor and the second bipolar transistor are coupled to the two input ends of the amplifier respectively, and at least one of the first bipolar transistor and the second bipolar transistor is coupled to the output end of the current mirror through a conducting circuit. The negative temperature coefficient compensation circuit is connected with the conducting circuit in parallel. The output resistor with adjustable resistance is coupled to the output end of the current mirror, voltage loaded on the output resistor serves as reference output voltage, and the magnitude of the output voltage is adjusted by adjusting the magnitude of the output resistor. The reference voltage source can adjust the magnitude of the output voltage by adjusting the magnitude of the output resistor, and the output voltage of the reference voltage source is unrelated with the temperature.
Description
Technical field
The present invention relates to technical field of integrated circuits, is used for digital-to-analogue conversion in particular to a kind of
The reference voltage source and electronic installation of device.
Background technology
Digital to analog converter is a kind of element for being widely used in each adhesive integrated circuit, and with product
Moral character can raising, the requirement of logarithm weighted-voltage D/A converter output gain error also more and more higher.Including
Put in the digital to analog converter of reference voltage source, the deviation of reference voltage source output directly affects digital-to-analogue
Transducer output gain error.One adjustable reference voltage source of output can be with logarithm weighted-voltage D/A converter
Output gain error compensate.In the reference voltage source of general structure, by output
The regulation of resistance, or the electric current of parasitic triode is adjusted can reach regulation reference voltage
The purpose in source.But, it is such to adjust the drawbacks of having a lot.On the one hand, in reference voltage source
In the case that temperature relation determines, output resistance or audion electric current is adjusted, easily made new defeated
Go out voltage deviation hygral equilibrium point, so that change of the output voltage to temperature is increased, it is right on the contrary
A negative interaction is played in the compensation of gain error, and gain error may be increasing.On the other hand,
Above-mentioned compensation way, the adjusting range of particularly parasitic triode electric current are extremely limited, it is impossible to
Adapt to the larger compensation of error.
Fig. 1 is the circuit diagram of a kind of common band gap (bandgap) reference voltage source.
As shown in figure 1, PM5, PM4, NM0, NM1 and NM2 constitute one together in figure
The input signal of difference amplifier, VP and VN for difference amplifier.PM0、PM1、PM2
With PM8 constitute current mirror, the difference amplifier be output as PM0, PM1, PM2 and
PM8 provides bias voltage.In figure, the voltage at R0 two ends is VP and VS, Q1 emitter stage electricity
Press as VN, meanwhile, VP and VN is two inputs of amplifier, so VP=VN.R0
The voltage at two ends is VP-VS=VN-VS, and VS is the emitter current of Q0, so VN-VS
It is that the emitter voltage of Q1 deducts the emitter voltage of Q0, i.e. △ VBE, △ VBE=VT*
ha, so by the electric current of R0 beingThis current mirror to outfan because
It is 1：1 mirror image, so the electric current of outfan isVoltage adds for R4 both end voltages
The VBE of upper Q2, so output
V in above-mentioned output formulaBEIt is a negative temperature coefficient parameter, VTIt is a positive temperature
Figure parameters. when temperature is raised, VBEAnd VTChange in the opposite direction.When in formula
R0 and R4 values it is proper when, VBEAnd VTFor the change of temperature is just mutually supported
Disappear, Vout is one and the less parameter of temperature dependency.When needing that output size is adjusted
When, it is necessary to VTCoefficient before adjusts, and is so not only to change output,
Before being allowed to simultaneously, the temperature coefficient equilibrium point of foundation is broken, and the Output simulation result after adjustment is such as
Shown in Fig. 2.In fig. 2, the coefficient in curve V1 formula falls
Voltage and temperature curve, curve V2 are by changing the when output that resistance makes output diminish
The graph of relation of voltage and temperature.Temperature model of the temperature between -40 DEG C～125 DEG C in Fig. 2
Enclose interior change.In fig. 2 it is observed that the coefficient in formula falls when equilibrium point,
When variation with temperature being exported less than 5mV, but makes output diminish by change resistance,
Output variation with temperature aggravation, when output drops to 1V, change is close to 80mV, i.e.
Change output voltage, make output variation with temperature tend to severe.
If alternatively by changing the electric current of audion realizing the tune to output voltage
Section, equally has similar problem.And audion electric current is adjusted due to the C-V characteristic of audion
Restriction, make the scope of regulation very limited.
Therefore, it is necessary to propose a kind of new reference voltage source circuit structure so as to output voltage
It is temperature independent, to solve above-mentioned problem.
The content of the invention
A series of concept of reduced forms is introduced in Summary, and this will be concrete real
Further describe in applying mode part.The Summary of the present invention is not meant to
Attempt to limit key feature and the essential features of technical scheme required for protection, less
Mean the protection domain for attempting to determine technical scheme required for protection.
In order to overcome the problem that presently, there are, one aspect of the present invention to provide a kind of for digital-to-analogue conversion
The reference voltage source of device, which includes：Current mirroring circuit, which includes at least one outfan；Put
Big device, the amplifier are couple to the current mirror, provide bias voltage for the current mirror；
First, second bipolar transistor, first, second bipolar transistor are respectively coupled to institute
State two inputs of amplifier, and in first, second bipolar transistor at least
One outfan for being couple to the current mirror by conducting channel；Negative temperature coefficient compensation electricity
Road, which is in parallel with the conducting channel；The adjustable output resistance of resistance, which is couple to the electricity
The outfan of stream mirror, is carried in the voltage of the output resistance as reference output voltage, passes through
Adjust the size of the output resistance to adjust the size of output voltage.
Preferably, first bipolar transistor is couple to the current mirror by first resistor
Outfan；Second bipolar transistor is directly coupled to the outfan of the current mirror；
The negative temperature coefficient compensation circuit includes being connected in parallel with second bipolar transistor
Compensation resistance.
Preferably, the amplifier is the difference amplifier for loading for electric current.
Preferably, the difference amplifier include differential pair that two nmos devices constitute,
Current mirror load that two PMOS devices are constituted and one provide electric current for the differential pair
Nmos device.
Preferably, also include for providing bias voltage and image current for the difference amplifier
Biasing circuit.
Preferably, the biasing circuit includes biased PMOS device, the biasing being connected in series
Resistance and biasing NMOS diodes, the source and drain and working power of the biased PMOS device
Connection, drain terminal are connected with the biasing resistor, and grid end is connected with the outfan of the difference amplifier
Connect, the source of biasing NMOS diodes ground connection, grid end with provide for the differential pair
The grid end connection of the nmos device of electric current, the drain terminal of the biasing NMOS diodes and institute
State biasing resistor connection.
Preferably, the current mirror includes four groups of PMOS devices, per group of PMOS device
The grid end of part is connected with the outfan of the amplifier.
Preferably, the output resistance include multiple resistance being connected in series and respectively with it is described
The switch of multiple resistor coupled in parallel.
The reference voltage source that the present invention is provided, produces one by first, second bipolar transistor
The electric current of individual positive temperature coefficient, then produces one by the negative temperature coefficient compensation circuit and bears
Temperature coefficient current, reaches can two current vs. temperatures by rationally setting circuit parameter flat
Then positive temperature coefficient electric current and negative temperature parameter current are mirrored to output by current mirror by weighing apparatus
End, the so size by adjusting output output resistance can just adjust the size of output voltage,
And due to temperature independent by the electric current of output resistance, thus the output electricity of reference voltage source
Pressure is temperature independent, as long as and output resistance range of accommodation is enough big, so that it may and realization is adjusted on a large scale
The purpose of the output voltage of section reference voltage source.
Further aspect of the present invention provides a kind of electronic installation, and which includes the above-mentioned base of present invention offer
Reference voltage source.
Electronic installation proposed by the present invention, due to said reference voltage source, thus has class
As advantage.
Description of the drawings
The drawings below of the present invention is used for understanding the present invention in this as the part of the present invention.It is attached
Embodiments of the invention and its description is shown in figure, for explaining the principle of the present invention.
In accompanying drawing：
Fig. 1 is the circuit diagram of a kind of common band gap (bandgap) reference voltage source；
Fig. 2 is that reference voltage voltage source output voltage shown in Fig. 1 is illustrated with temperature change relation
Figure；
Circuit diagrams of the Fig. 3 for the reference voltage source of an embodiment of the present invention；
Fig. 4 is the output voltage of reference voltage source shown in Fig. 3 and temperature change relation schematic diagram；
Structural representations of the Fig. 5 for the adjustable resistance of an embodiment of the present invention；
Fig. 6 shows the schematic diagram of electronic installation according to an embodiment of the present invention.
Specific embodiment
In the following description, a large amount of concrete details are given to provide to the present invention more
Thoroughly understand.It is, however, obvious to a person skilled in the art that of the invention
Can be carried out without the need for one or more of these details.In other examples, in order to keep away
Exempt to obscure with the present invention, for some technical characteristics well known in the art are not described.
It should be appreciated that the present invention can be implemented in different forms, and it is not construed as office
It is limited to embodiments presented herein.Disclosure will be made thoroughly and complete on the contrary, providing these embodiments
Entirely, and those skilled in the art be will fully convey the scope of the invention to.In the accompanying drawings,
In order to clear, the size and relative size in Ceng He areas may be exaggerated.It is identical attached from start to finish
Icon note represents identical element.
The purpose of term as used herein is only that description specific embodiment and not as this
Bright restriction.When here is used, " one " of singulative, " one " and " described/should "
It is also intended to include plural form, unless context is expressly noted that other mode.It is also to be understood that art
Language " composition " and/or " including ", when using in this specification, determine the feature,
The presence of integer, step, operation, element and/or part, but be not excluded for it is one or more its
The presence or addition of its feature, integer, step, operation, element, part and/or group.
When here is used, term "and/or" includes any and all combination of related Listed Items.
The present invention provides a kind of reference voltage source, and which includes：Current mirroring circuit, it include to
A few outfan；Amplifier, the amplifier are couple to the current mirror, are the electric current
Mirror provides bias voltage；First, second bipolar transistor, first, second bipolarity
Transistor is respectively coupled to two inputs of the amplifier, and described first, second bipolar
At least one of property transistor is couple to the outfan of the current mirror by conducting channel；It is negative
Tc compensation circuit, which is in parallel with the conducting channel；Output resistance, which is couple to institute
State the outfan of current mirror, and resistance be adjustable, by adjust the size of the output resistance come
Adjust the size of output voltage.
Preferably, first bipolar transistor is couple to the electricity by the first conducting channel
The outfan of stream mirror, it is brilliant that first conducting channel includes that series connection two is connected on first bipolarity
The first resistor of body pipe emitter stage and the current mirror outputs；Second bipolar transistor
The outfan of the current mirror is couple to by the second conducting channel；The negative temperature coefficient compensation
Circuit includes the compensation resistance being connected in parallel with first conducting channel and the second conductive ionization.
The reference voltage source that the present invention is provided, produces one by first, second bipolar transistor
The electric current of individual positive temperature coefficient, then produces one by the negative temperature coefficient compensation circuit and bears
Temperature coefficient current, reaches can two current vs. temperatures by rationally setting circuit parameter flat
Then positive temperature coefficient electric current and negative temperature parameter current are mirrored to output by current mirror by weighing apparatus
End, the so size by adjusting output output resistance can just adjust the size of output voltage,
And due to temperature independent by the electric current of output resistance, thus the output electricity of reference voltage source
Pressure is temperature independent, as long as and output resistance range of accommodation is enough big, so that it may and realization is adjusted on a large scale
The purpose of the output voltage of section reference voltage source.
In order to thoroughly understand the present invention, detailed structure and step will be proposed in following description
Suddenly, to explain technical scheme proposed by the present invention.Presently preferred embodiments of the present invention is described in detail
It is as follows, but in addition to these detailed descriptions, the present invention can also have other embodiment.
Embodiment one
Circuit diagrams of the Fig. 3 for the reference voltage source of an embodiment of the present invention；Fig. 4 is figure
The output voltage of reference voltage source shown in 3 and temperature change relation schematic diagram；Fig. 5 is the present invention
The structural representation of the adjustable resistance of one embodiment；With reference to Fig. 3～Fig. 5 to this enforcement
The reference voltage source of mode is described in detail.
As shown in figure 3, present embodiment reference power supply include mirror currents, difference amplifier,
First, second bipolar transistor, negative temperature coefficient compensation circuit and adjustable output resistance.
Wherein, current mirroring circuit is by four groups of PMOS devices PM0, PM1, PM2 and PM8
Constitute, group PMOS device PM0, PM1, the source of PM2 and PM8 and working power
AVDD connects, and grid end is connected with the outfan of difference amplifier, drain terminal as outfan, its
The drain terminal of middle PM0 is connected with the emitter stage of the first bipolar transistor Q0 by resistance R0,
PM1 drain terminals are connected with the emitter stage of the second bipolar transistor Q1, and the drain terminal of PM2 is by electricity
Resistance R3 ground connection, the drain terminal of PM8 are connected with output resistance R4.
Every group of PMOS device PM0, PM1, PM2 and PM8 can be selected properly as needed
The MOS components of quantity, as an example, in the present embodiment, every group of PMOS device is wrapped
10 PM0, PM1, PM2 and PM8 are included, current mirror mirroring ratios are 1：1.Certainly,
Also dependent on needing to adjust the quantity of each group PMOS device, so as to adjust mirroring ratios for which
His appropriate value.
The difference amplifier includes the difference of two nmos device NM0 and NM1 compositions
It is right, the current mirror load of two PMOS devices PM5 and PM4 compositions, and be the difference
Divide the nmos device NM2 to providing electric current.
Moreover it is preferred that also including providing bias voltage and mirror image electricity for the difference amplifier
The biasing circuit of stream.Biased PMOS device PM6 that the biasing circuit includes being connected in series,
Biasing resistor R27 and biasing NMOS diode NM3, the source of the biased PMOS device
Leakage PM6 is connected with working power AVDD, and drain terminal is connected with one end of the biasing resistor R27
Connect, grid end is connected with the outfan of the difference amplifier, the biasing NMOS diodes
The source ground connection of NM3, grid end and the nmos device NM2 that electric current is provided for the differential pair
Grid end connection, the drain terminal and the biasing resistor of the biasing NMOS diode NM3
The other end connection of R27.
The emitter stage of the first bipolar transistor Q0 is connected with one end of resistance R0, base terminal
AVSS is grounded by R3, the drain terminal of the emitter stage PM2 of the second bipolar transistor Q1 connects
Connect, base terminal is grounded AVSS, the first bipolar transistor Q0 and the second bipolarity by R3
The base stage of transistor Q1 is all grounded, i.e. the first bipolar transistor Q0 and the second bipolarity are brilliant
Body pipe Q1 is the transistor of diode fashion connection.
In the present embodiment, the negative temperature coefficient compensation circuit includes bipolar with described first
Property resistance R1 transistor Q0 and resistance R0 in parallel and with second bipolar transistor
Resistance R2 Q1 in parallel, wherein R1 and R2 adopt same specification.
The voltage at an end position that resistance R0 is connected with PM0 in the present embodiment is
VP, the emitter voltage VS of the first bipolar transistor Q0, the second bipolar transistor Q1
Emitter voltage VN, wherein VP and VN be separately input to difference amplifier two are defeated
Enter end.
In figure, the voltage at R0 two ends is VP and VS, Q1 emitter voltage is VN, works as difference
Two input voltage VP and VN of amplifier be mutually matched and Q0 size be Q1 n
Times, then VP=VN.The voltage at R0 two ends is VP-VS=VN-VS, and VS is the transmitting of Q0
Electrode current, so the emitter voltage that VN-VS is Q1 deducts the emitter voltage of Q0, i.e.,
△VBE, △ VBE=VT*ha, wherein VTFor temperature voltage, VT=kT/q, k are Bo Ziman
Constant, q are quantities of charge.So by flowing through the electric current of R0 beingThis electric current
With temperature into than and the electric current for flowing through resistance R1 isWherein Vbe2For the penetrating of Q1-
Base voltage, i.e. VN, this electric current are negative temperature parameter current, thus resistance R1 is constituted
Branch road be referred to as negative temperature coefficient compensation electric current, the electric current sum for flowing through R0 and R1 is equal to
The output current of PMOS, as long as the resistance for adjusting R0 and R1 can make the electric current with temperature
Degree is unrelated.By PM8 by the current mirror to outfan, thus output voltage isIn formula, the equilibrium point of temperature comes real by the coefficient in bracket
Existing, once it is determined that equilibrium point, the electric current in R0, R1 and audion no longer will change, and defeated
The change for going out is completed by R4.Relative the stablizing with temperature of a reference source output is ensure that so
Property, a larger output area can be obtained again.For exporting conditioned circuit, we can be
Above-mentioned formula is changed to:Wherein a is the ratio system for adjusting
Number, in circuit by multi-path choice realizing the function of a.
Fig. 4 shows that the output voltage of the reference voltage source of present embodiment and temperature change are closed
It is schematic diagram.In figure curve V3 be output voltage in 750mv or so, output voltage with temperature
The graph of a relation of degree, curve V3 be output voltage in 950mv or so, output voltage and temperature
Graph of a relation.From on figure as can be seen that when output is transferred to 950mV from 750mV,
Change relative to temperature is controlled within 4mV always.
Adjustment for output resistance R4 can be realized by simple selection circuit, such as be schemed
Shown in 5, output resistance R4 includes multiple two resistance for connecing of series connection, and with each resistance simultaneously
The switch of connection connection, the scalable output resistance of the quantity opened by controlling switch and closed
Size, realizes the large range of change of reference voltage.
As an example, in the present embodiment, output resistance R4 includes four marks being connected in series
Quasi- resistance R6, R7, R8, R9 and corresponding switch S6～S9.
It is understood that the circuit of present embodiment can be also wrapped in addition to including above-mentioned part
Other circuit units are included, the dormant circuit that PM3 and NM4 are composition is such as may include,
When idle, circuit power consumption is made to be approximately 0.
Embodiment two
The present invention also provides a kind of electronic installation in addition, and which includes aforesaid reference voltage source.
The electronic installation, can be mobile phone, panel computer, notebook computer, net book, trip
Gaming machine, television set, VCD, DVD, navigator, photographing unit, video camera, recording pen,
Any electronic product such as MP3, MP4, PSP or equipment, or there is above-mentioned quasiconductor
The intermediate products of device, for example：Cell phone mainboard with the integrated circuit etc..In this embodiment
Example is carried out by taking PDA as an example, as shown in Figure 6.
The present invention is illustrated by above-described embodiment, but it is to be understood that, it is above-mentioned
Embodiment is only intended to citing and descriptive purpose, and is not intended to limit the invention to described
Scope of embodiments in.In addition it will be appreciated by persons skilled in the art that the present invention not office
It is limited to above-described embodiment, teaching of the invention can also be made more kinds of modifications and repair
Change, within these variants and modifications all fall within scope of the present invention.The present invention's
Protection domain is defined by the appended claims and its equivalent scope.
Claims (9)
1. a kind of reference voltage source for digital to analog converter, it is characterised in that include：
Current mirroring circuit, which includes at least one outfan；
Amplifier, the amplifier are couple to the current mirror, provide biasing for the current mirror
Voltage；
First, second bipolar transistor, first, second bipolar transistor distinguish coupling
Two inputs of the amplifier are connect, and in first, second bipolar transistor
At least one outfan for being couple to the current mirror by conducting channel；
Negative temperature coefficient compensation circuit, which is in parallel with the conducting channel；
The adjustable output resistance of resistance, which is couple to the outfan of the current mirror, is carried in institute
The voltage of output resistance is stated as reference output voltage, by adjusting the size of the output resistance
To adjust the size of output voltage.
2. reference voltage source according to claim 1, it is characterised in that described first
Bipolar transistor is couple to the outfan of the current mirror by first resistor；
Second bipolar transistor is directly coupled to the outfan of the current mirror；
The negative temperature coefficient compensation circuit includes connect in parallel with second bipolar transistor
The compensation resistance for connecing.
3. reference voltage source according to claim 1, it is characterised in that the amplification
Device is the difference amplifier for loading for electric current.
4. reference voltage source according to claim 3, it is characterised in that the difference
Amplifier includes what the differential pair that two nmos devices constitute, two PMOS devices were constituted
Current mirror load and a nmos device that electric current is provided for the differential pair.
5. reference voltage source according to claim 4, it is characterised in that also include using
In the biasing circuit for providing bias voltage and image current for the difference amplifier.
6. reference voltage source according to claim 5, it is characterised in that the biasing
Circuit includes biased PMOS device, bis- pole of biasing resistor and biasing NMOS being connected in series
Pipe, the source and drain of the biased PMOS device is connected with working power, drain terminal and the biasing
Resistance connects, and grid end is connected with the outfan of the difference amplifier, the biasing NMOS
The source ground connection of diode, grid end and the nmos device that electric current is provided for the differential pair
Grid end connects, and the drain terminal of the biasing NMOS diodes is connected with the biasing resistor.
7. reference voltage source according to claim 1, it is characterised in that the electric current
Mirror includes four groups of PMOS devices, the grid end of per group of PMOS device and the amplifier
Outfan connection.
8. the reference voltage source according to one of claim 1-7, it is characterised in that institute
State output resistance include multiple resistance being connected in series and respectively with the plurality of resistor coupled in parallel
Switch.
9. a kind of electronic installation, it is characterised in that include as described in one of claim 1-8
Reference voltage source.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201510574380.4A CN106527574A (en) | 2015-09-10 | 2015-09-10 | Reference voltage source for digital/analog converter and electronic device |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510574380.4A CN106527574A (en) | 2015-09-10 | 2015-09-10 | Reference voltage source for digital/analog converter and electronic device |
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| CN106527574A true CN106527574A (en) | 2017-03-22 |
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Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101183272A (en) * | 2006-11-16 | 2008-05-21 | 因芬奈昂技术股份有限公司 | Systems, apparatus and methods relating to bandgap circuits |
| US20110012581A1 (en) * | 2009-07-15 | 2011-01-20 | Aicestar Technology(Suzhou) Corporation | Bandgap circuit having a zero temperature coefficient |
| CN202171758U (en) * | 2011-08-24 | 2012-03-21 | 周继军 | Band-gap reference voltage circuit |
| US8638084B1 (en) * | 2010-10-22 | 2014-01-28 | Xilinx, Inc. | Bandgap bias circuit compenastion using a current density range and resistive loads |
| KR101362474B1 (en) * | 2013-03-04 | 2014-02-14 | 충북대학교 산학협력단 | Cmos subbandgap reference |
| CN103869861A (en) * | 2012-12-11 | 2014-06-18 | 索尼公司 | Bandgap reference circuit |
| CN104375545A (en) * | 2013-08-14 | 2015-02-25 | 奕力科技股份有限公司 | Band-gap reference voltage circuit and electronic device thereof |
-
2015
- 2015-09-10 CN CN201510574380.4A patent/CN106527574A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101183272A (en) * | 2006-11-16 | 2008-05-21 | 因芬奈昂技术股份有限公司 | Systems, apparatus and methods relating to bandgap circuits |
| US20110012581A1 (en) * | 2009-07-15 | 2011-01-20 | Aicestar Technology(Suzhou) Corporation | Bandgap circuit having a zero temperature coefficient |
| US8638084B1 (en) * | 2010-10-22 | 2014-01-28 | Xilinx, Inc. | Bandgap bias circuit compenastion using a current density range and resistive loads |
| CN202171758U (en) * | 2011-08-24 | 2012-03-21 | 周继军 | Band-gap reference voltage circuit |
| CN103869861A (en) * | 2012-12-11 | 2014-06-18 | 索尼公司 | Bandgap reference circuit |
| KR101362474B1 (en) * | 2013-03-04 | 2014-02-14 | 충북대학교 산학협력단 | Cmos subbandgap reference |
| CN104375545A (en) * | 2013-08-14 | 2015-02-25 | 奕力科技股份有限公司 | Band-gap reference voltage circuit and electronic device thereof |
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Application publication date: 20170322 |