CN106527003B - array substrate, liquid crystal display panel and display device - Google Patents
array substrate, liquid crystal display panel and display device Download PDFInfo
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- CN106527003B CN106527003B CN201611248815.7A CN201611248815A CN106527003B CN 106527003 B CN106527003 B CN 106527003B CN 201611248815 A CN201611248815 A CN 201611248815A CN 106527003 B CN106527003 B CN 106527003B
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- 239000000758 substrate Substances 0.000 title claims abstract description 56
- 239000004973 liquid crystal related substance Substances 0.000 title claims abstract description 27
- 239000003990 capacitor Substances 0.000 claims abstract description 112
- 239000010409 thin film Substances 0.000 claims description 23
- 239000002184 metal Substances 0.000 claims description 14
- 230000000153 supplemental effect Effects 0.000 claims description 13
- 230000000694 effects Effects 0.000 abstract description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 230000003071 parasitic effect Effects 0.000 description 2
- 230000002159 abnormal effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
Classifications
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136213—Storage capacitors associated with the pixel electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1255—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs integrated with passive devices, e.g. auxiliary capacitors
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Liquid Crystal (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Optics & Photonics (AREA)
- Liquid Crystal Display Device Control (AREA)
Abstract
The invention discloses an array substrate, a liquid crystal display panel and a display device.A mode of adding at least one group of supplementary storage capacitors connected with storage capacitors in parallel and switching devices corresponding to the supplementary storage capacitors one by one in each pixel structure is adopted, and the connection relation between the supplementary storage capacitors and the storage capacitors is adjusted according to the working frequency required by the array substrate, so that the effect of adjusting the total storage capacitance in the pixel structure to adapt to the change of scanning frequency is achieved. Specifically, when the array substrate works at a first frequency with a lower frequency, the switching device can conduct the parallel connection of the supplementary storage capacitor and the storage capacitor so as to increase the total storage capacitance in the pixel structure; when the array substrate works at a second frequency with higher frequency, the switch device can disconnect the parallel connection of the supplementary storage capacitor and the storage capacitor so as to reduce the total storage capacitance in the pixel structure and improve the charging rate.
Description
Technical Field
The invention relates to the technical field of display, in particular to an array substrate, a liquid crystal display panel and a display device.
Background
In a liquid crystal display panel, in order to keep the charged voltage of each pixel structure until the next picture updating, a storage capacitor (Cst) needs to be arranged in each pixel structure, and the opposite area between a pixel electrode and a common electrode in the pixel structure is generally used as the storage capacitor. The size of the storage capacitor has a direct relationship with the scanning frequency of the liquid crystal display panel, and when the pixel structures are arranged, the size of the storage capacitor (Cst) of each pixel structure is arranged according to the required scanning frequency.
For example, when the scanning frequency is 30Hz, because the charging time is sufficient and the time per frame is long, the leakage current has a large influence on the product performance, which may cause a problem of Flicker (Flicker), and at this time, a large storage capacitor needs to be set to counter the leakage current. For example, when the scanning frequency is 120Hz, the charging time is short, and a large storage capacitor causes a problem of insufficient charging, so that a small storage capacitor is provided to adapt to a high-frequency operation state.
The current liquid crystal display panel can only set a fixed storage capacitor according to a set scanning frequency, that is, the storage capacitor cannot adjust the size of the storage capacitor according to the change of the working state of the liquid crystal display panel. The fixed storage capacitor cannot adjust the scanning frequency according to the use condition, for example, when the high-frequency work is performed, the clock signal is short, the set storage capacitor is also small, and if the frequency reduction work is performed, the problems of abnormal pictures and the like are easy to occur.
Therefore, the current lcd panel cannot meet the different requirements of the product for the storage capacitor under different working conditions.
Disclosure of Invention
The embodiment of the invention provides an array substrate, a liquid crystal display panel and a display device, which are used for solving the problem that a storage capacitor in the existing array substrate cannot adapt to the change of scanning frequency.
an embodiment of the present invention provides an array substrate, including: the pixel structure comprises a plurality of pixel structures which are arranged in an array mode, wherein each pixel structure is provided with a storage capacitor, at least one group of supplementary storage capacitors which are connected with the storage capacitors in parallel, and switching devices which correspond to the supplementary storage capacitors one to one; wherein,
The switching device is used for conducting the parallel connection of the supplementary storage capacitor and the storage capacitor when the array substrate works at a first frequency; when the array substrate works at a second frequency, the parallel connection of the supplementary storage capacitor and the storage capacitor is disconnected; the first frequency is less than the second frequency.
The embodiment of the invention also provides a liquid crystal display panel which comprises the array substrate provided by the embodiment of the invention.
The embodiment of the invention also provides a display device which comprises the liquid crystal display panel provided by the embodiment of the invention.
The invention has the following beneficial effects:
according to the array substrate, the liquid crystal display panel and the display device provided by the embodiment of the invention, the connection relation between the supplementary storage capacitor and the storage capacitor is adjusted according to the required working frequency of the array substrate by adding at least one group of supplementary storage capacitors connected with the storage capacitor in parallel and switching devices corresponding to the supplementary storage capacitors one by one in each pixel structure, so that the effect of adjusting the total storage capacitance in the pixel structure to adapt to the change of the scanning frequency is achieved. Specifically, when the array substrate works at a first frequency with a lower frequency, the switching device can conduct the parallel connection of the supplementary storage capacitor and the storage capacitor so as to increase the total storage capacitance in the pixel structure; when the array substrate works at a second frequency with higher frequency, the switch device can disconnect the parallel connection of the supplementary storage capacitor and the storage capacitor so as to reduce the total storage capacitance in the pixel structure and improve the charging rate.
Drawings
fig. 1 is a schematic structural diagram of an array substrate according to an embodiment of the present invention;
Fig. 2 is a schematic structural diagram of an array substrate in the prior art;
Fig. 3 is a second schematic structural diagram of an array substrate according to an embodiment of the invention;
Fig. 4 is a schematic structural diagram of a liquid crystal display panel according to an embodiment of the invention.
Detailed Description
The following describes in detail an array substrate, a liquid crystal display panel and a display according to embodiments of the present invention with reference to the accompanying drawings.
An embodiment of the present invention provides an array substrate, as shown in fig. 1, including: the pixel structure comprises a plurality of pixel structures which are arranged in an array, wherein each pixel structure is provided with a storage capacitor Cst, at least one group of supplementary storage capacitors Cst 'which are connected with the storage capacitors Cst in parallel, and switching devices SW which correspond to the supplementary storage capacitors Cst' one to one; wherein,
The switching device SW is used for conducting the parallel connection of the supplementary storage capacitor Cst' and the storage capacitor Cst when the array substrate works at a first frequency; when the array substrate works at a second frequency, the supplementary storage capacitor Cst' is disconnected from the storage capacitor Cst in parallel; the first frequency is less than the second frequency.
In specific implementation, as shown in fig. 1, in the array substrate provided in the embodiment of the present invention, the pixel structure is generally disposed in an area defined by two adjacent Gate lines Gate 1 and Gate 2 and two adjacent Data lines Data 1 and Data 2, and includes a switching transistor TFT, a Gate of the switching transistor TFT is connected to one Gate line Gate 1, a source of the switching transistor TFT is connected to one Data line Data 1, and a drain of the switching transistor TFT is connected to a pixel electrode terminal. When a Gate scanning signal is applied to the Gate line Gate 1 connected to the switching transistor TFT, the switching transistor is turned on, and a gray scale signal applied to the Data line Data 1 connected to the switching transistor TFT is transmitted to the pixel electrode terminal connected to the switching transistor TFT. An electric field generated between the pixel electrode terminal and the common electrode terminal controls Liquid Crystal (LC) to be turned over, thereby modulating light passing therethrough.
Specifically, in the pixel structure in the array substrate provided by the embodiment of the present invention, as shown in fig. 1, in addition to the liquid crystal capacitor CLC and the storage capacitor Cst formed between the pixel electrode terminal and the common electrode terminal, parasitic capacitors Cpg and Cpg 'are generated between the pixel electrode terminal and two adjacent Gate lines Gate 1 and Gate 2, respectively, and parasitic capacitors Cps and Cps' are generated between the pixel electrode terminal and two adjacent Data lines Data 1 and Data 2, respectively.
Specifically, in the array substrate provided in the embodiment of the present invention, compared with the existing pixel structure shown in fig. 2, by adding at least one set of supplemental storage capacitors Cst ' connected in parallel with the storage capacitors Cst and switching devices SW corresponding to the supplemental storage capacitors Cst ' one to one in each pixel structure, the connection relationship between the supplemental storage capacitors Cst ' and the storage capacitors Cst is adjusted according to the required operating frequency of the array substrate, so that the effect of adjusting the total storage capacitance in the pixel structure to adapt to the change of the scanning frequency is achieved.
Specifically, when the array substrate operates at a first frequency with a lower frequency, the switching device SW may turn on the supplementary storage capacitor Cst' in parallel with the storage capacitor Cst, so as to increase the total storage capacitance in the pixel structure; when the array substrate operates at a second frequency higher than the first frequency, the switching device SW may disconnect the supplemental storage capacitor Cst' from the storage capacitor Cst in parallel, so as to reduce the total storage capacitance in the pixel structure and improve the charging rate.
In a specific implementation, in the array substrate provided in the embodiment of the present invention, the second frequency with a higher operating frequency is generally 120Hz, and correspondingly, the first frequency with a lower operating frequency is generally 30Hz to 50Hz, and may be 30Hz, for example. Therefore, when the array substrate works at 30Hz, the switching device SW can be controlled to be switched on, so that the supplementary storage capacitor Cst' is connected with the storage capacitor Cst in parallel, the total storage capacitance of the pixel structure is increased, and the pixel structure is convenient to fully charge so as to avoid the problem of flicker. When the array substrate is switched to operate at 120Hz, the switching device SW can be controlled to be turned off to disconnect the parallel connection between the supplemental storage capacitor Cst' and the storage capacitor Cst, so as to reduce the total storage capacitance of the pixel structure, thereby improving the charging efficiency.
In practical implementation, in the array substrate provided in the embodiment of the present invention, according to the ratio range of the first frequency and the second frequency, the ratio of the capacitance value of the supplemental storage capacitor Cst' to the capacitance value of the storage capacitor Cst is generally controlled to be about 1:5, so as to satisfy the adjustment of the total storage capacitance of the pixel structure.
in specific implementation, in the array substrate provided in the embodiment of the present invention, in order to facilitate the switching device SW to control the connection state between the supplementary storage capacitor Cst' and the storage capacitor Cst, as shown in fig. 1, the switching device SW may be a thin film transistor; the source of the thin film transistor is connected to one electrode of the storage capacitor Cst ', the drain of the thin film transistor is connected to one electrode of the storage capacitor Cst, and the gate of the thin film transistor is connected to the switching signal Line SW Line and the other electrode of the storage capacitor Cst'. When the switch signal Line SW Line is loaded with an effective signal, the thin film transistor can be controlled to be in a conducting state, so that the supplementary storage capacitor Cst' is in a parallel state with the storage capacitor Cst through a source/drain electrode of the thin film transistor; when the switch signal Line SW Line is turned off to apply the active signal, the thin film transistor can be controlled to be in an off state, and the parallel connection state of the supplementary storage capacitor Cst' and the storage capacitor Cst is turned off.
It should be noted that the active signal loaded on the switch signal Line SW Line needs to be determined according to the property of the thin film transistor, for example, when an N-type transistor is used, the N-type transistor needs to be controlled to be in an on state by using a high level signal as the active signal, and when a P-type transistor is used, the P-type transistor needs to be controlled to be in an on state by using a low level signal as the active signal.
further, in the array substrate provided in the embodiment of the present invention, the supplementary storage capacitor Cst 'is specifically composed of a first metal electrode terminal and a second metal electrode terminal, and the supplementary storage capacitor Cst' is formed in a region where the first metal electrode terminal and the second metal electrode terminal are opposite; the first metal electrode end, the gate of the thin film transistor and the switch signal Line SW Line are arranged on the same layer and connected with each other, namely the first metal electrode end, the gate of the thin film transistor and the switch signal Line SW Line are made of the same metal layer to form corresponding patterns, the second metal electrode end and the source of the thin film transistor are arranged on the same layer and connected with each other, namely the second metal electrode end and the source and drain of the thin film transistor are made of the same metal layer to form corresponding patterns.
In specific implementation, in the array substrate provided in the embodiment of the present invention, as shown in fig. 1, the storage capacitor Cst generally includes a pixel electrode terminal and a common electrode terminal; wherein the pixel electrode terminal may be connected to a drain electrode of the thin film transistor. Thus, when the thin film transistor is in the on state, the gray scale signal applied to the pixel electrode terminal can be transmitted to one electrode terminal of the supplementary storage capacitor Cst'. Of course, in the implementation, the common electrode terminal may be connected to the drain electrode of the thin film transistor, and will not be described in detail herein.
In specific implementation, when the array substrate provided in the embodiment of the invention needs to work at more than two scanning frequencies according to actual operation, a plurality of sets of corresponding supplemental storage capacitors Cst' may be set according to the scanning frequencies that need to be switched. When each pixel structure has at least two sets of supplemental storage capacitors Cst ', for example, when it is necessary to switch the frequency between 120Hz, 50Hz, and 30Hz, as shown in fig. 3, each pixel structure may be provided with two sets of supplemental storage capacitors Cst' a and Cst 'b, and the switching devices SW a and SW b corresponding to each set of supplemental storage capacitors Cst' need to be connected to different switching signal lines SW Line a and SW Line b in order to control the desired on-states of the switching devices SW a and SW b through the different switching signal lines SW Line a and SW Line b.
In addition, in a specific implementation, in order to facilitate pattern design, in the array substrate provided in the embodiment of the present invention, the switch signal lines SW Line may be disposed in substantially the same extending direction as the Gate lines Gate connected to the pixel structure, as shown in fig. 1 and 3. Of course, in a specific implementation, the switch signal Line SW Line may be set to have substantially the same extending direction as the Data Line Data connected to the pixel structure, and is not limited herein.
Based on the same inventive concept, an embodiment of the present invention provides a liquid crystal display panel, as shown in fig. 4, including the array substrate 100 provided by the embodiment of the present invention. Also, the liquid crystal display device generally includes a counter substrate 200 facing the array substrate, and a liquid crystal layer 300 interposed therebetween. Since the principle of solving the problems of the liquid crystal display panel is similar to that of the array substrate, the implementation of the liquid crystal display panel can refer to the implementation of the array substrate, and repeated details are not repeated.
Based on the same inventive concept, an embodiment of the present invention further provides a display device, including the liquid crystal display panel provided by the embodiment of the present invention, where the display device may be: any product or component with a display function, such as a mobile phone, a tablet computer, a television, a display, a notebook computer, a digital photo frame, a navigator and the like. The implementation of the display device can be seen in the above embodiments of the liquid crystal display panel, and repeated descriptions are omitted.
According to the array substrate, the liquid crystal display panel and the display device provided by the embodiment of the invention, the connection relation between the supplementary storage capacitor and the storage capacitor is adjusted according to the required working frequency of the array substrate by adding at least one group of supplementary storage capacitors connected with the storage capacitor in parallel and switching devices corresponding to the supplementary storage capacitors one by one in each pixel structure, so that the effect of adjusting the total storage capacitance in the pixel structure to adapt to the change of the scanning frequency is achieved. Specifically, when the array substrate works at a first frequency with a lower frequency, the switching device can conduct the parallel connection of the supplementary storage capacitor and the storage capacitor so as to increase the total storage capacitance in the pixel structure; when the array substrate works at a second frequency with higher frequency, the switch device can disconnect the parallel connection of the supplementary storage capacitor and the storage capacitor so as to reduce the total storage capacitance in the pixel structure and improve the charging rate.
It will be apparent to those skilled in the art that various changes and modifications may be made in the present invention without departing from the spirit and scope of the invention. Thus, if such modifications and variations of the present invention fall within the scope of the claims of the present invention and their equivalents, the present invention is also intended to include such modifications and variations.
Claims (7)
1. An array substrate, comprising: the pixel structure comprises a plurality of pixel structures which are arranged in an array mode, wherein each pixel structure is provided with a storage capacitor, at least one group of supplementary storage capacitors which are connected with the storage capacitors in parallel, and switching devices which correspond to the supplementary storage capacitors one to one; wherein,
The switching device is used for conducting the parallel connection of the supplementary storage capacitor and the storage capacitor when the array substrate works at a first frequency; when the array substrate works at a second frequency, the parallel connection of the supplementary storage capacitor and the storage capacitor is disconnected; the first frequency is less than the second frequency, and the switching device is a thin film transistor; wherein,
The source electrode of the thin film transistor is connected with one electrode end of the supplementary storage capacitor, the drain electrode of the thin film transistor is connected with one electrode end of the storage capacitor, and the grid electrode of the thin film transistor is respectively connected with the switching signal line and the other electrode end of the supplementary storage capacitor; when the switch signal line is loaded with an effective signal, the thin film transistor is controlled to be in a conducting state, and the supplementary storage capacitor is in a parallel connection state with the storage capacitor through the source electrode and the drain electrode;
Wherein the ratio of the capacitance value of the supplementary storage capacitor to the capacitance value of the storage capacitor is 1:5, and the first frequency is 30Hz-50 Hz; the second frequency is 120 Hz.
2. The array substrate of claim 1, wherein the supplemental storage capacitor comprises a first metal electrode terminal and a second metal electrode terminal, wherein the first metal electrode terminal is disposed and connected to the gate of the thin film transistor and the switch signal line at the same layer, and the second metal electrode terminal is disposed and connected to the source of the thin film transistor at the same layer.
3. The array substrate of claim 1, wherein the storage capacitor is composed of a pixel electrode terminal and a common electrode terminal; and the pixel electrode end is connected with the drain electrode of the thin film transistor.
4. the array substrate of claim 1, wherein when each of the pixel structures has at least two sets of the supplemental storage capacitors, the switching devices corresponding to each set of the supplemental storage capacitors are connected to different switching signal lines.
5. the array substrate of claim 4, wherein the switching signal line and the gate line connected to the pixel structure extend in substantially the same direction.
6. a liquid crystal display panel comprising the array substrate according to any one of claims 1 to 5.
7. A display device comprising the liquid crystal display panel according to claim 6.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201611248815.7A CN106527003B (en) | 2016-12-29 | 2016-12-29 | array substrate, liquid crystal display panel and display device |
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| CN201611248815.7A CN106527003B (en) | 2016-12-29 | 2016-12-29 | array substrate, liquid crystal display panel and display device |
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| CN106527003A CN106527003A (en) | 2017-03-22 |
| CN106527003B true CN106527003B (en) | 2019-12-06 |
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| CN107291303B (en) * | 2017-08-02 | 2020-09-25 | 厦门天马微电子有限公司 | Touch display panel and touch display device |
| CN108363253B (en) * | 2018-02-09 | 2020-12-22 | 京东方科技集团股份有限公司 | Array substrate and driving method and manufacturing method thereof |
| CN109585525B (en) * | 2019-01-08 | 2021-04-13 | 京东方科技集团股份有限公司 | Array substrate, manufacturing method thereof, display panel and display device |
| CN111128025B (en) * | 2019-12-30 | 2021-11-26 | 厦门天马微电子有限公司 | Array substrate, display panel and display device |
| CN113990250B (en) * | 2021-10-27 | 2023-01-31 | 厦门天马显示科技有限公司 | Display module and display device |
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| JP4484137B2 (en) * | 2004-02-13 | 2010-06-16 | シャープ株式会社 | Active matrix display device, driving method thereof, and electronic information device |
| CN100573281C (en) * | 2004-04-26 | 2009-12-23 | 统宝光电股份有限公司 | Pixel structure and display panel with multiple storage capacitors |
| US8072409B2 (en) * | 2009-02-25 | 2011-12-06 | Au Optronics Corporation | LCD with common voltage driving circuits |
| US8730226B2 (en) * | 2010-11-04 | 2014-05-20 | Scanvue Technologies, Llc | Thin-film transistor liquid-crystal display with variable frame frequency |
| CN102967974B (en) * | 2012-11-08 | 2016-03-30 | 京东方科技集团股份有限公司 | A kind of array base palte, display device and refreshing frequency control method |
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