CN106526961A - High scattering super-hydrophobic quantum dot film and preparation method thereof - Google Patents
High scattering super-hydrophobic quantum dot film and preparation method thereof Download PDFInfo
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- CN106526961A CN106526961A CN201611032878.9A CN201611032878A CN106526961A CN 106526961 A CN106526961 A CN 106526961A CN 201611032878 A CN201611032878 A CN 201611032878A CN 106526961 A CN106526961 A CN 106526961A
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- 230000003075 superhydrophobic effect Effects 0.000 title claims abstract description 90
- 239000002096 quantum dot Substances 0.000 title claims abstract description 83
- 238000002360 preparation method Methods 0.000 title claims abstract description 16
- 239000002245 particle Substances 0.000 claims abstract description 85
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 25
- 239000000741 silica gel Substances 0.000 claims abstract description 24
- 229910002027 silica gel Inorganic materials 0.000 claims abstract description 24
- 230000003287 optical effect Effects 0.000 claims abstract description 16
- 239000002105 nanoparticle Substances 0.000 claims abstract description 11
- 239000002131 composite material Substances 0.000 claims abstract description 6
- 239000010408 film Substances 0.000 claims description 47
- 229910052594 sapphire Inorganic materials 0.000 claims description 16
- 239000010980 sapphire Substances 0.000 claims description 16
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 13
- 238000000034 method Methods 0.000 claims description 13
- 239000000203 mixture Substances 0.000 claims description 13
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 claims description 12
- 238000004528 spin coating Methods 0.000 claims description 12
- 239000000758 substrate Substances 0.000 claims description 12
- 238000001338 self-assembly Methods 0.000 claims description 11
- 239000010409 thin film Substances 0.000 claims description 10
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 10
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 8
- 239000003795 chemical substances by application Substances 0.000 claims description 8
- 238000007731 hot pressing Methods 0.000 claims description 7
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 5
- 238000010276 construction Methods 0.000 claims description 5
- 239000007788 liquid Substances 0.000 claims description 5
- 239000007787 solid Substances 0.000 claims description 5
- 238000007711 solidification Methods 0.000 claims description 5
- 230000008023 solidification Effects 0.000 claims description 5
- 239000000843 powder Substances 0.000 claims description 4
- 239000002904 solvent Substances 0.000 claims description 4
- 238000003756 stirring Methods 0.000 claims description 4
- 239000011248 coating agent Substances 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 3
- 238000003754 machining Methods 0.000 claims description 3
- 238000001259 photo etching Methods 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- 239000004408 titanium dioxide Substances 0.000 claims description 3
- 125000001165 hydrophobic group Chemical group 0.000 claims description 2
- 150000002576 ketones Chemical class 0.000 claims description 2
- 229920000642 polymer Polymers 0.000 claims description 2
- 235000012239 silicon dioxide Nutrition 0.000 claims description 2
- 230000004048 modification Effects 0.000 abstract description 3
- 238000012986 modification Methods 0.000 abstract description 3
- 230000002209 hydrophobic effect Effects 0.000 abstract 1
- 230000002035 prolonged effect Effects 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 103
- 239000000243 solution Substances 0.000 description 10
- 238000006243 chemical reaction Methods 0.000 description 5
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 description 4
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 3
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 239000012153 distilled water Substances 0.000 description 3
- 238000011010 flushing procedure Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 3
- 241000790917 Dioxys <bee> Species 0.000 description 2
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 238000002835 absorbance Methods 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- 229910003978 SiClx Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 229920002125 Sokalan® Polymers 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 235000011114 ammonium hydroxide Nutrition 0.000 description 1
- FPCJKVGGYOAWIZ-UHFFFAOYSA-N butan-1-ol;titanium Chemical compound [Ti].CCCCO.CCCCO.CCCCO.CCCCO FPCJKVGGYOAWIZ-UHFFFAOYSA-N 0.000 description 1
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 description 1
- KRVSOGSZCMJSLX-UHFFFAOYSA-L chromic acid Substances O[Cr](O)(=O)=O KRVSOGSZCMJSLX-UHFFFAOYSA-L 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 229960000935 dehydrated alcohol Drugs 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 239000004205 dimethyl polysiloxane Substances 0.000 description 1
- 235000013870 dimethyl polysiloxane Nutrition 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 229960004756 ethanol Drugs 0.000 description 1
- XYIBRDXRRQCHLP-UHFFFAOYSA-N ethyl acetoacetate Chemical compound CCOC(=O)CC(C)=O XYIBRDXRRQCHLP-UHFFFAOYSA-N 0.000 description 1
- AWJWCTOOIBYHON-UHFFFAOYSA-N furo[3,4-b]pyrazine-5,7-dione Chemical compound C1=CN=C2C(=O)OC(=O)C2=N1 AWJWCTOOIBYHON-UHFFFAOYSA-N 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000006210 lotion Substances 0.000 description 1
- 238000003760 magnetic stirring Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- CXQXSVUQTKDNFP-UHFFFAOYSA-N octamethyltrisiloxane Chemical compound C[Si](C)(C)O[Si](C)(C)O[Si](C)(C)C CXQXSVUQTKDNFP-UHFFFAOYSA-N 0.000 description 1
- 238000004987 plasma desorption mass spectroscopy Methods 0.000 description 1
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 description 1
- 239000004584 polyacrylic acid Substances 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 238000009877 rendering Methods 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 238000000790 scattering method Methods 0.000 description 1
- 239000002094 self assembled monolayer Substances 0.000 description 1
- 239000013545 self-assembled monolayer Substances 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- PFUVRDFDKPNGAV-UHFFFAOYSA-N sodium peroxide Chemical compound [Na+].[Na+].[O-][O-] PFUVRDFDKPNGAV-UHFFFAOYSA-N 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/1336—Illuminating devices
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/1336—Illuminating devices
- G02F1/133614—Illuminating devices using photoluminescence, e.g. phosphors illuminated by UV or blue light
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Luminescent Compositions (AREA)
- Laminated Bodies (AREA)
Abstract
The invention discloses a high scattering super-hydrophobic quantum dot film and a preparation method thereof. The high scattering super-hydrophobic quantum dot film is a composite structure film formed by combining an upper super-hydrophobic particle layer (1), an upper taper hole layer (2), a quantum dot layer (3), a lower taper hole layer (4) and a lower super-hydrophobic particle layer (5) in sequence from top to bottom. The upper super hydrophobic particle layer (1) and the lower super-hydrophobic particle layer (5) are both formed by uniformly arranging nanoscale particles with two different particle sizes, and the particles are subjected to surface hydrophobic modification and therefore have a super-hydrophobic property; both the upper taper hole layer (2) and the lower taper hole layer (4) contain a smooth optical surface and an optical surface on which taper hole microstructures are uniformly distributed; the quantum dot layer (3) is a quantum dot and silica gel mixed layer. The high scattering super-hydrophobic quantum dot film has the function of improving the scattering property and the super-hydrophobic property, and at the same time, the service life of the quantum dot film is prolonged.
Description
Technical field
The present invention relates to the preparation field of quantum dot film, more particularly to a kind of super-hydrophobic quantum dot film of high scattering and its system
Preparation Method.
Background technology
Due to energy consumption is low, good, lightweight color rendering propertiess and the features such as energy-conserving and environment-protective, current liquid crystal display into
For the main flow display on market.In existing liquid crystal display（LCD）In, generally using light emitting diode（LED）As the back of the body
Light source, by luring the reasonably combined backlight realized needed for display panels of tabula rasa and blooming piece.As people are to high color
Domain, the requirement more and more higher of high color saturation, quantum dot Display Technique also increasingly receive publicity.Quantum dot Display Technique can
The wavelength of light, and then the color of precise control light are controlled using the crystalline solid of different size size.Therefore quanta point material is answered
For, in backlight module, replacing conventional white light LED light source using the high spectrum light source for including blue light LED light source, effectively increasing
The quality of light.In quantum dot Display Technique, quantum dot film is one of most important application form.
Conventional quantum dot film majority is encapsulated in quantum dot between two diaphragms and makes at present.But quanta point material
Property is unstable, is easily affected by moisture and oxygen, causes the quantum point failure on diaphragm edge and surface.At present in quantum dot
In display technology field, the method for quantum dot membrane lifetime and optical conversion efficiencies is improved still in minority.
The content of the invention
It is an object of the invention to overcome the shortcoming and defect of above-mentioned prior art, there is provided a kind of super-hydrophobic amount of high scattering
Son point film and preparation method thereof.
A kind of super-hydrophobic quantum dot film of high scattering is from top to bottom by upper super-hydrophobic particle layer, epicone aperture layer, quantum dot
Layer, lower cone hole layer and under super-hydrophobic particle layer arrange successively the composite construction film being combined into.
Further, the upper super-hydrophobic particle layer super-hydrophobic particle layer with is by the nano-grade size of two kinds of particle diameters
Uniform particle coating is constituted, and particle is through surface hydrophobicity moditied processing, with ultra-hydrophobicity.
Further, the mol ratio of the nano-grade size particle of two kinds of particle diameters is 1：0.5~2mol/mol.
Further, during the nano-grade size particle includes titanium dioxide nano-particle and Nano particles of silicon dioxide
One kind.
Further, the upper super-hydrophobic particle layer and under in super-hydrophobic particle layer particle particle size range in 20-150nm
Between.
Further, the epicone aperture layer and lower cone hole layer have a smooth optical surface and another are evenly distributed with cone
The optical surface of hole micro structure, taper hole micro structure enhance scattering process and back scattering of the composite construction film to light and act on,
So as to improve conversion efficiency of the quantum dot layer to light.
Further, the upper super-hydrophobic particle layer is coated on the light for being evenly distributed with taper hole micro structure of epicone aperture layer
Learn surface, it is described under super-hydrophobic particle layer be coated on the optical surface for being evenly distributed with taper hole micro structure of lower cone hole layer.
Further, the smooth optical surface of the epicone aperture layer and lower cone hole layer respectively with quantum dot layer both sides table
Fit in face；The epicone aperture layer and lower cone hole layer are symmetrically distributed in the both sides of quantum dot layer.
Further, the taper hole depth of the taper hole micro structure is 1-20 μm, and taper hole is a diameter of 1-40 μm, taper hole drift angle
For 30-120 °, taper hole center distance is 1-60 μm.
Further, the epicone aperture layer and lower cone hole layer are layer of silica gel.
Further, the quantum dot layer is quantum dot-silica gel mixed layer, wherein, is had by mass percentage：Quantum dot
0.5-5%, silica gel 90-95%, remaining is firming agent.
Further, the thickness of the epicone aperture layer and lower cone hole layer is 0.5-5mm.
Further, the thickness of the quantum dot layer is 0.5-10mm.
Further, upper super-hydrophobic particle layer thickness of super-hydrophobic particle layer with is 0.01-10 μm.
The preparation method of the super-hydrophobic quantum dot film of a kind of high scattering described in any of the above-described, comprises the steps：
（1）The preparation of quantum dot layer：By the quantum dot layer each component, quantum dot powder and silica gel solution are together dissolved in into third
Mixture is formed in ketone solution, the acetone in magnetic stirrer in abundant heated and stirred to mixture all volatilizees, addition is solid
Agent, with centrifugal blender mix homogeneously, simultaneously deaeration is processed, and reinjects baking-curing in corresponding mould, and curing and demolding is obtained
Quantum dot layer；
（2）The preparation of taper hole layer：By the taper hole microstructure size, the Surface Machining of sapphire wafer is gone out using photoetching technique
Equally distributed cone micro structure, used as the template for making taper hole layer；Sapphire wafer with surface cone micro structure is solid
It is scheduled on spin coater rotating disk, starts spin coater, the sapphire wafer central authorities that silica gel liquid is injected at rotation is carried out with syringe
Spin coating；Sapphire wafer is removed after spin coating, oven for baking solidification, solidification is placed in together with the silica gel thin film on surface
Afterwards the silica gel thin film with taper hole micro structure is removed, taper hole layer is obtained；
（3）It is prepared by the self assembly of super-hydrophobic particle layer：By the nano-grade size mix particles of two kinds of particle diameters and it is dissolved in anhydrous second
In alcohol, adding the polymer containing hydrophobic group carries out surface hydrophobicity moditied processing, and the nano-particle solution for obtaining is placed in
Shaken well is stirred in ultrasonic oscillator；By step（2）The smooth surface of the taper hole layer for obtaining is fitted in without surface texture
As substrate in smooth sapphire wafer, using the method for self assembly, nano-particle solution is allowed to form unimolecule on substrate thin
Film, forms super-hydrophobic particle layer；
（4）The assembling of the super-hydrophobic quantum dot film of high scattering：Super-hydrophobic particle layer will be coated with a piece of taper hole micro structure face
The smooth surface of taper hole layer is fitted with the smooth surface of quantum dot layer, is close to using the further hot pressing of hot press；A piece of cone is taken again
The smooth surface of taper hole layer for being coated with super-hydrophobic particle layer on the micro structure face of hole is fitted with another smooth surface of quantum dot layer,
It is close to hot press hot pressing, constitutes the super-hydrophobic quantum dot film of the high scattering.
Further, step（1）In, the heated and stirred is the heated and stirred at 60 DEG C ~ 85 DEG C.
Further, step（1）In, the baking-curing is toasted 1 ~ 3 hour at 150 ~ 170 DEG C.
Further, step（2）In, the rotating speed of the spin coating is 600 ~ 2000r/min, and the time of spin coating is 30 ~ 60s.
Further, step（2）In, the baking-curing is toasted 1 ~ 2 hour at 90 ~ 140 DEG C.
Further, step（3）In, the concentration of the nano-particle solution is 0.07-0.1mol/L.
Further, step（3）In, the time stirred in the ultrasonic oscillator is 1 ~ 5 hour.
Further, step（3）In, the solvent of the self assembly includes anhydrous benzene, and the time of self assembly is 5-24 hours.
Further, step（4）In, the temperature that the hot pressing is close to is 100-180 DEG C.
Compared with prior art, the present invention has the advantage that and effect：
（1）The composite construction film that the present invention is combined into has raising scattering property, super-hydrophobic function.
（2）The taper hole layer of the super-hydrophobic quantum dot film of the high scattering of the present invention has the taper hole micro structure of micron-scale, replaces
Traditional Remote fluorescent film, can improve scattering effect of the light in quantum dot film, greatly improve conversion efficiency, save quantum dot
Material, while improve the colour temperature uniform spatial distribution of LED.
（3）The surface of the super-hydrophobic quantum dot film of the high scattering of the present invention is provided with super-hydrophobic particle layer, with super-hydrophobic work(
Can, effectively completely cut off extraneous moisture and oxygen, and then prevent the quantum dot layer of changeableness from reacting with water oxygen and being modified, improve quantum
The life-span of point film.
Description of the drawings
Fig. 1 is the schematic perspective view of the super-hydrophobic quantum dot film of high scattering of the invention；
Fig. 2 is the section plan of the super-hydrophobic quantum dot film of high scattering of the invention；
Fig. 3 is the super-hydrophobic particle layer structural representation of the super-hydrophobic quantum dot film of high scattering of the invention.
Specific embodiment
The present invention is more specifically described in detail with reference to specific embodiment.
The schematic perspective view of the super-hydrophobic quantum dot film of the high scattering of the present invention is as shown in figure 1, section plan such as Fig. 2 institutes
Show, by shown in Fig. 1 and Fig. 2, the super-hydrophobic quantum dot film of high scattering of the invention be from top to bottom by upper super-hydrophobic particle layer 1, on
Taper hole layer 2, quantum dot layer 3, lower cone hole layer 4 and under super-hydrophobic particle layer 5 arrange successively the composite construction film being combined into；
The super-hydrophobic particle layer 5 with of upper super-hydrophobic particle layer 1 is by the nano-grade size uniform particle coating structure of two kinds of particle diameters
Into, and particle is through surface hydrophobicity moditied processing, with ultra-hydrophobicity；The mol ratio of the nano-grade size particle of two kinds of particle diameters
For 1：0.5~2mol/mol；Super-hydrophobic particle layer structural representation is as shown in Figure 3；The super-hydrophobic grain with of upper super-hydrophobic particle layer 1
In sublayer 5, the particle size range of particle is between 20-150nm；
Epicone aperture layer 2 and lower cone hole layer 4 have a smooth optical surface and another optics for being evenly distributed with taper hole micro structure
Surface；Upper super-hydrophobic particle layer 1 is coated on the optical surface for being evenly distributed with taper hole micro structure of epicone aperture layer 2, under it is super-hydrophobic
Particle layer 5 is coated on the optical surface for being evenly distributed with taper hole micro structure of lower cone hole layer 4；The taper hole depth of taper hole micro structure is
1-20 μm, taper hole is a diameter of 1-40 μm, and taper hole drift angle is 30-120 °, and taper hole center distance is 1-60 μm；
The smooth optical surface of epicone aperture layer 2 and lower cone hole layer 4 is fitted with 3 both side surface of quantum dot layer respectively；The epicone
Aperture layer 2 and lower cone hole layer 4 are symmetrically distributed in the both sides of quantum dot layer 3；
Epicone aperture layer 2 and lower cone hole layer 4 are layer of silica gel；Quantum dot layer 3 is quantum dot-silica gel mixed layer, wherein, by quality hundred
Ratio is divided to have：Quantum dot 0.5-5%, silica gel 90-95%, remaining is firming agent；
The thickness of epicone aperture layer 2 and lower cone hole layer 4 is 0.5-5mm；The thickness of quantum dot layer 3 is 0.5-10mm；It is upper super-hydrophobic
The thickness of super-hydrophobic particle layer 5 with of particle layer 1 is 0.01-10 μm.
Embodiment 1
The preparation of the super-hydrophobic quantum dot film of high scattering
（1）The preparation of quantum dot layer：24mg powder of cadmium selenide quanta dots and 0.9g DOW CORNING OE6650 Type B silicon are measured with balance
Glue body forms mixture in being together dissolved in 6ml acetone solns, with 80 DEG C of constant temperature stirring mixtures in magnetic stirrer, directly
Acetone soln into mixture volatilizees completely；The mixing cured agent contents of 0.3g are added in the quantum dot-silica gel solution for obtaining
After DOW CORNING OE6650 A type silica gel liquid, DOW CORNING OE6650 A type silica gel liquid is mixed with the curing agent component of 36wt%,
With the simultaneously deaeration of centrifugal blender mix homogeneously, in film forming thickness being injected for the mould of 2mm, be placed in 160 DEG C of oven for baking admittedly
Turn to 2 hours, curing and demolding, obtain the quantum dot layer 2 that thickness is 2mm；
（2）The preparation of taper hole layer：The Surface Machining of the circular sapphire thin slice of a diameter of 50mm is gone out uniformly using photoetching technique
The cone micro structure of distribution, used as the template for making taper hole layer；Cone height is 20 μm, and cone diameter is 40 μm, and drift angle is 90
Degree, cone neutrality spacing is 30 μm；Sapphire wafer with surface micro-structure is fixed on spin coater rotating disk, spin coating is opened
Machine, 1ml configured good PDMS silica gel liquid is injected at the sapphire wafer central authorities of rotation with syringe, and spin coating rotating speed is
2000r/min, spin-coating time are 30s；Sapphire wafer is removed after spin coating, baking box is placed in together with the silica gel thin film on surface
Middle baking-curing, temperature range are 140 DEG C, and hardening time is 2 hours；The silica gel thin film with taper hole micro structure is taken after solidification
Under, obtain the taper hole layer that thickness is 0.5mm；
（3）It is prepared by the self assembly of super-hydrophobic particle layer：It is that 20nm and 6g particle diameters are molten for the titania powder of 100nm by 6g particle diameters
In the ethanol solution of butyl titanate, the solution of 0.07mol/L, pH=2 is prepared into, adds 1g poly butyrics penta
Sour solvent carries out surface hydrophobicity modification, and the mixture for obtaining is placed in ultrasonic oscillator to stir deposits standby for 1 hour；By step
（2）The taper hole layer smooth surface for obtaining is fitted in conduct in the circular smooth sapphire wafer of a diameter of 50mm without surface texture
Self assembly substrate, soaks 4 hours in being put into chromic acid lotion together, uses distilled water flushing after taking-up, then successively in chloroform, isopropanol
Supersound washing 15min in aqueous solution；Concentration that dry substrate immersion is configured as solvent with anhydrous benzene is as 0.005mol/L
In KH-950 silane coupler solutions, assemble 5 hours under room temperature, after taking-up, use benzene, chloroform and water wash successively；Again substrate is put
After entering in sodium peroxide saturated aqueous solution under room temperature reaction 1 hour, take out, use distilled water flushing；Substrate is put into into configuration finally
In good titania solution, deposit 4 hours at room temperature, with distilled water flushing and dry, super-hydrophobic dioxy after taking out substrate
Change titanium particle layer to be just covered on taper hole layer micro-structure surface, obtain super dewatering titanium oxide being coated with taper hole micro-structure surface
The taper hole layer of particle layer, 5 μm of the thickness of super dewatering titanium oxide particle layer；
（4）The assembling of the super-hydrophobic quantum dot film of high scattering property：A piece of taper hole micro-structure surface is coated with into super-hydrophobic titanium dioxide
The smooth surface of the taper hole layer of titanium particle layer is fitted with the smooth surface of quantum dot layer 2, further hot at 120 DEG C using hot press
Compress patch；Take again a piece of taper hole micro-structure surface be coated with super dewatering titanium oxide particle layer taper hole layer smooth surface and amount
Another smooth surface laminating of son point layer 2, is close in 120 DEG C of hot pressing with hot press, constitutes the super-hydrophobic amount of the high scattering property
Son point film.
Water droplet is 158 ° in the contact angle of obtained super-hydrophobic quantum film, and the absorbance of super-hydrophobic quantum dot film is 89%.
Embodiment 2
Same as Example 1, difference is, the particle of super-hydrophobic particle layer adopts particle diameter for the dioxy of 25nm and 125nm
SiClx particle；
And step（3）In：By step（2）The taper hole layer smooth surface for obtaining is fitted in the circle of a diameter of 50mm without surface texture
It is standby as self assembly substrate in the smooth sapphire wafer of shape；With reference to phase detachment technique, with tetraethyl orthosilicate as precursor, by positive silicon
Acetoacetic ester（TEOS）, dehydrated alcohol（ETH）, glycerol, deionized water, the strong aqua ammonia of 13mol/L is with 1：10：1：5：2 volume
Proportioning mixes, and the quick stirring on magnetic stirring apparatuss is allowed to mix homogeneously, after reaction carries out 30min, still aging under room temperature
24h, obtains the translucent alkaline-sol of milkiness；The polyacrylic acid that the mass ratio with TEOS is 16% is added in alkaline-sol；To soak
Stain czochralski method will add polyacrylic alkaline-sol to be uniformly plated on the aforesaid substrate of cleaning, and the substrate of plated particle layer is placed in
After 30min is dried in 40 DEG C of baking oven, shaggy SiO is obtained2Thin film；Finally, using modified chemical vapor method, with low
Surface energy substance trim,ethylchlorosilane is dressing agent, forms trim,ethylchlorosilane self assembled monolayer in film surface, obtains
SiO2Based superhydrophobic thin films.
Water droplet is 156 ° in the contact angle of obtained super-hydrophobic quantum film, and the absorbance of super-hydrophobic quantum film is 95%.
Embodiments of the present invention are simultaneously not restricted to the described embodiments, other any spirit without departing from the present invention
Equivalent substitute mode is with the change, modification, replacement, combination, simplification made under principle, the protection of the present invention is included in
Within the scope of.
Claims (10)
1. the super-hydrophobic quantum dot film of a kind of high scattering, it is characterised in that the super-hydrophobic quantum dot film of the high scattering is from upper
To under by upper super-hydrophobic particle layer（1）, epicone aperture layer（2）, quantum dot layer（3）, lower cone hole layer（4）The super-hydrophobic particle layer with
（5）Arrange successively the composite construction film being combined into.
2. a kind of super-hydrophobic quantum dot film of high scattering according to claim 1, it is characterised in that the upper super-hydrophobic grain
Sublayer（1）The super-hydrophobic particle layer with（5）It is to be made up of the nano-grade size uniform particle coating of two kinds of particle diameters, and particle Jing
Surface hydrophobicity moditied processing is crossed, with ultra-hydrophobicity；The mol ratio of the nano-grade size particle of two kinds of particle diameters is 1：0.5~
2mol/mol；The upper super-hydrophobic particle layer（1）The super-hydrophobic particle layer with（5）The particle size range of middle particle 20-150nm it
Between.
3. a kind of super-hydrophobic quantum dot film of high scattering according to claim 2, it is characterised in that the nano-grade size
Particle includes the one kind in titanium dioxide nano-particle and Nano particles of silicon dioxide.
4. a kind of super-hydrophobic quantum dot film of high scattering according to claim 1, it is characterised in that the epicone aperture layer
（2）With lower cone hole layer（4）There are a smooth optical surface and another optical surface for being evenly distributed with taper hole micro structure；It is described
Upper super-hydrophobic particle layer（1）It is coated on epicone aperture layer（2）The optical surface for being evenly distributed with taper hole micro structure, it is described lower super thin
Water particle sublayer（5）It is coated on lower cone hole layer（4）The optical surface for being evenly distributed with taper hole micro structure.
5. a kind of super-hydrophobic quantum dot film of high scattering according to claim 4, it is characterised in that the epicone aperture layer
（2）With lower cone hole layer（4）Smooth optical surface respectively with quantum dot layer（3）Both side surface is fitted；The epicone aperture layer（2）
With lower cone hole layer（4）It is symmetrically distributed in quantum dot layer（3）Both sides.
6. a kind of super-hydrophobic quantum dot film of high scattering according to claim 4, it is characterised in that the taper hole micro structure
Taper hole depth be 1-20 μm, taper hole is a diameter of 1-40 μm, taper hole drift angle be 30-120 °, taper hole center distance be 1-60 μm.
7. a kind of super-hydrophobic quantum dot film of high scattering according to claim 1, it is characterised in that the epicone aperture layer
（2）With lower cone hole layer（4）It is layer of silica gel；The quantum dot layer（3）For quantum dot-silica gel mixed layer, wherein, by quality percentage
Than having：Quantum dot 0.5-5%, silica gel 90-95%, remaining is firming agent.
8. a kind of super-hydrophobic quantum dot film of high scattering according to claim 1, it is characterised in that the epicone aperture layer
（2）With lower cone hole layer（4）Thickness be 0.5-5mm；The quantum dot layer（3）Thickness be 0.5-10mm；It is described super thin
Water particle sublayer（1）The super-hydrophobic particle layer with（5）Thickness be 0.01-10 μm.
9. the preparation method of the super-hydrophobic quantum dot film of a kind of high scattering described in any one of claim 1 ~ 8, it is characterised in that
Comprise the steps：
（1）The preparation of quantum dot layer：By the quantum dot layer each component, quantum dot powder and silica gel solution are together dissolved in into third
Mixture is formed in ketone solution, the acetone in magnetic stirrer in abundant heated and stirred to mixture all volatilizees, addition is solid
Agent, with centrifugal blender mix homogeneously, simultaneously deaeration is processed, and reinjects baking-curing in corresponding mould, and curing and demolding is obtained
Quantum dot layer；
（2）The preparation of taper hole layer：By the taper hole microstructure size, the Surface Machining of sapphire wafer is gone out using photoetching technique
Equally distributed cone micro structure, used as the template for making taper hole layer；Sapphire wafer with surface cone micro structure is solid
It is scheduled on spin coater rotating disk, starts spin coater, the sapphire wafer central authorities that silica gel liquid is injected at rotation is carried out with syringe
Spin coating；Sapphire wafer is removed after spin coating, oven for baking solidification, solidification is placed in together with the silica gel thin film on surface
Afterwards the silica gel thin film with taper hole micro structure is removed, taper hole layer is obtained；
（3）It is prepared by the self assembly of super-hydrophobic particle layer：By the nano-grade size mix particles of two kinds of particle diameters and it is dissolved in anhydrous second
In alcohol, adding the polymer containing hydrophobic group carries out surface hydrophobicity moditied processing, and the nano-particle solution for obtaining is placed in
Shaken well is stirred in ultrasonic oscillator；By step（2）The smooth surface of the taper hole layer for obtaining is fitted in without surface texture
As substrate in smooth sapphire wafer, using the method for self assembly, nano-particle solution is allowed to form unimolecule on substrate thin
Film, forms super-hydrophobic particle layer；
（4）The assembling of the super-hydrophobic quantum dot film of high scattering：Super-hydrophobic particle layer will be coated with a piece of taper hole micro structure face
The smooth surface of taper hole layer is fitted with the smooth surface of quantum dot layer, is close to using the further hot pressing of hot press；A piece of cone is taken again
The smooth surface of taper hole layer for being coated with super-hydrophobic particle layer on the micro structure face of hole is fitted with another smooth surface of quantum dot layer,
It is close to hot press hot pressing again, constitutes the super-hydrophobic quantum dot film of the high scattering.
10. a kind of preparation method of the super-hydrophobic quantum dot film of high scattering according to claim 9, it is characterised in that step
Suddenly（1）In, the heated and stirred is the heated and stirred at 60 DEG C ~ 85 DEG C, the baking-curing be at 150 ~ 170 DEG C baking 1 ~
3 hours；Step（2）In, the rotating speed of the spin coating is 600 ~ 2000r/min, and time of spin coating is 30 ~ 60s, the baking-curing
It is to toast 1 ~ 2 hour at 90 ~ 140 DEG C；Step（3）In, the concentration of the nano-particle solution is 0.07-0.1mol/L, described
The time for stirring vibration in ultrasonic oscillator is 1 ~ 5 hour, and the solvent of the self assembly includes anhydrous benzene, the time of self assembly
For 5-24 hours；Step（4）In, the temperature that the hot pressing is close to is 100-180 DEG C.
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| CN111040756A (en) * | 2019-12-16 | 2020-04-21 | 深圳扑浪创新科技有限公司 | Optical film and manufacturing method thereof |
| WO2021036211A1 (en) * | 2019-08-23 | 2021-03-04 | 致晶科技（北京）有限公司 | Quantum dot film encapsulation method and encapsulated quantum dot film, and use thereof |
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