CN106526442A - LDMOS transistor self-heating effect evaluation method and self-heating effect evaluation system - Google Patents
LDMOS transistor self-heating effect evaluation method and self-heating effect evaluation system Download PDFInfo
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- 238000010438 heat treatment Methods 0.000 title claims abstract description 105
- 230000000694 effects Effects 0.000 title claims abstract description 102
- 238000011156 evaluation Methods 0.000 title claims abstract description 68
- 238000000034 method Methods 0.000 claims abstract description 24
- 239000000758 substrate Substances 0.000 claims description 41
- 238000005259 measurement Methods 0.000 claims description 28
- 238000009529 body temperature measurement Methods 0.000 claims description 21
- 230000006870 function Effects 0.000 claims description 17
- 238000007789 sealing Methods 0.000 claims description 17
- 230000008859 change Effects 0.000 claims description 11
- 230000005611 electricity Effects 0.000 claims description 7
- 230000036413 temperature sense Effects 0.000 claims description 6
- 230000008569 process Effects 0.000 claims description 5
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- 238000006243 chemical reaction Methods 0.000 claims description 3
- 238000013461 design Methods 0.000 abstract description 9
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- 238000002955 isolation Methods 0.000 description 3
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- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
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- 229910052710 silicon Inorganic materials 0.000 description 2
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- 238000006731 degradation reaction Methods 0.000 description 1
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- 239000011229 interlayer Substances 0.000 description 1
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Abstract
The invention provides an LDMOS transistor self-heating effect evaluation method and self-heating effect evaluation system. The self-heating effect evaluation system comprises an LDMOS transistor and a temperature sensing component. The temperature sensing component is loaded with a preset current to make the voltage of the temperature sensing component correspond to the temperature. According to a temperature measuring unit, the temperature of the temperature sensing component can be obtained. A self-heating effect evaluation unit uses the temperature of the temperature sensing component obtained from the temperature measuring unit as the temperature of the LDMOS transistor and is capable of obtaining the relationship between the source and drain current values of the LDMOS transistor and the signal voltage and the temperature based on the temperature of the LDMOS transistor and the source and drain current values and the signal voltages of the LDMOS transistor. Thus, the method and system of the present invention can simulate the effect of the self-heating effect on an LDMOS transistor I-V curve. In subsequent circuit designs, the self-heating effect can be used as a reference to the source and drain current values of the LDMOS transistor, making the design performance of the LDMOS transistor approach the actual performance more.
Description
Technical field
The present invention relates to semiconductor applications, the self-heating effect evaluation side of more particularly to a kind of ldmos transistor
Method and self-heating effect evaluation system.
Background technology
Compared with common field-effect transistor, LDMOS (lateral double-diffused MOSFET)
Transistor is in gain, the linearity, switch performance, heat dispersion and reduces the device property sides such as series
Face has obvious advantage, therefore is widely applied.
Ldmos transistor is a kind of high tension apparatus, is displayed for device and drives IC or radio-frequency devices.
Due to being usually used under condition of high voltage, operationally temperature is higher for ldmos transistor, usually reaches 100 and takes the photograph
More than family name's degree, at these high temperatures, ldmos transistor can produce performance degradation.For example：With temperature
Raise, the source and drain equivalent electric resistive of ldmos transistor is big so that drain current reduces, this phenomenon claims
The self-heating effect for ldmos transistor.
When semiconductor device design is carried out, need to consider the self-heating effect of ldmos transistor, that is, need
Find I-V curve and the ldmos transistor operating temperature of current a certain model ldmos transistor
Relation, but prior art cannot when ldmos transistor works direct measurement ldmos transistor
Temperature, be also just difficult to carrying out considering self-heating effect this factor when ldmos transistor is designed, make
The ldmos transistor performance that must be designed is difficult to conformance with standard.
Therefore, ldmos transistor temperature operationally and I-V curve how is simultaneously measured, with
Carrying out self-heating effect reasonably being considered when ldmos transistor is designed, becoming those skilled in the art urgently
Problem to be solved.
The content of the invention
The problem that the present invention is solved be to provide a kind of self-heating effect evaluation methodology of ldmos transistor with
And self-heating effect evaluation system, for, while ensureing that the area shared by transistor does not increase, improving
The breakdown voltage of ldmos transistor.
For solving the above problems, the present invention provides a kind of self-heating effect evaluation system of ldmos transistor,
Including：
Ldmos transistor；
Ldmos transistor control unit, distinguishes for the grid to the ldmos transistor and source electrode
Apply grid voltage and signal voltage, the ldmos transistor is produced self-heating effect and is measured described
The source-drain current value of ldmos transistor；
Temperature sensing device, it is adjacent with the ldmos transistor, can be in the ldmos transistor
Temperature change is produced in the presence of self-heating effect；The temperature sensing device is loaded with a predetermined current, uses
There is corresponding relation in the voltage of the temperature sensing device is made with temperature；
Temperature measurement unit, for measuring the voltage of the temperature sensing device, to obtain the temperature sense
The temperature of device is answered, and as the temperature of the ldmos transistor；
Self-heating effect evaluation unit, for the ldmos transistor that obtained according to temperature measurement unit
The source-drain current value of the ldmos transistor that temperature, the ldmos transistor control unit are obtained and letter
Number voltage, obtains the source-drain current value of the ldmos transistor, the relation between signal voltage and temperature.
Optionally, the temperature sensing device is booster diode.
Optionally, the ldmos transistor and the booster diode are formed on a substrate, the substrate
In be additionally provided with doping sealing coat, the ldmos transistor is located on the doping sealing coat.
Optionally, the booster diode is included near the first pole of the ldmos transistor and away from institute
The second pole of ldmos transistor is stated, first pole is located on the doping sealing coat, and the second pole does not set
It is placed on the doping sealing coat.
Optionally, the first pole ground connection of the booster diode, the temperature measurement unit is for described
Second pole of booster diode provides the predetermined current, for making the electricity of the second pole of the booster diode
Pressure has corresponding relation with temperature；
The temperature measurement unit includes：
Power supply, is electrically connected with the second pole of the booster diode, for providing for the booster diode
Electric current；
Voltage measurement unit, for measuring the voltage of the second pole of the booster diode；
The corresponding relation of computing unit, the voltage based on the second pole of booster diode and temperature, according to described
The voltage of the second pole of booster diode obtains the temperature of booster diode.
Optionally, the temperature measurement unit also includes the switch being arranged between second pole and power supply
Device, the switching device is for when the ldmos transistor is opened, making second pole and power supply
Electrical connection.
Optionally, the switching device be MOS transistor, the grid of the MOS transistor with it is described
The grid electrical connection of ldmos transistor, for when the ldmos transistor is opened, making the MOS
Transistor is opened, and then makes second pole and power electric connection.
Optionally, the self-heating effect evaluation system also includes：
Heater, for heating the substrate when power supply applies the predetermined current to booster diode,
Raise the temperature of the booster diode；
The voltage of temperature of the computing unit based on heater and voltage measurement unit measurement is obtained
The voltage of booster diode and the corresponding relation of temperature.
Optionally, the heater is provided with temperature measurement device, for heating dress described in real time reaction
The temperature put.
Optionally, the computing unit includes：
Memory element, for storing the preliminary expression formula of the voltage-temperature function of the booster diode
Wherein IdFor the predetermined current provided to the booster diode, Vd is the booster diode
The voltage of the first pole, T are the temperature of the booster diode, and k is Boltzmann constant, and n, A and Φ are
The constant related to the booster diode self property, the preliminary expression formula can be reduced to
Vd=a T+b；
Fitting unit, the step of for the substrate will be heated in, what is obtained under the predetermined current is more
Group temperature T and the second pole tension of booster diode Vd substitute into the preliminary expression formula after the simplification, obtain
The final expression formula of the voltage-temperature function, using the final expression formula as the electricity of temperature sensing device
The corresponding relation of pressure and temperature.
Optionally, the effective temperature that the booster diode can be measured that is within 800K.
The present invention also provides a kind of self-heating effect evaluation methodology of ldmos transistor, and the LDMOS is brilliant
Body pipe is located on substrate, is additionally provided with temperature sensing device on the substrate, the ldmos transistor and
Temperature sensing device is adjacent, and the temperature sensing device can be in the ldmos transistor self-heating effect
Effect is lower to produce temperature change, it is characterised in that the evaluation methodology includes：
The substrate is heated, raises the temperature of temperature sensing device, the temperature sensing device is applied
One predetermined current, at different temperatures, the magnitude of voltage of the temperature sensing device is described to obtain for measurement
The voltage of temperature sensing device and the corresponding relation of temperature；
The ldmos transistor and temperature sensing device is made to recover room temperature, to the ldmos transistor
Grid apply grid voltage, signal voltage applied to source electrode, make ldmos transistor work；
The predetermined current, the institute in the ldmos transistor course of work are applied to the temperature sensing device
The self-heating effect for stating ldmos transistor causes the temperature sensing device temperature to raise；
In temperature sensing device temperature elevation process, the magnitude of voltage of the temperature sensing device is measured, and
The temperature of the temperature sensing device is obtained based on the voltage and the corresponding relation of temperature, as described
The Current Temperatures of ldmos transistor；
Under each temperature value of ldmos transistor, the signal voltage change is made, and institute is flow through in measurement
The source-drain current value of ldmos transistor is stated, signal voltage and source-drain current value under each temperature value is obtained
Corresponding relation, with reference to described in the signal voltage of multiple temperature values and the corresponding relation of source-drain current value are obtained
The signal voltage of ldmos transistor, the relation between source-drain current value and temperature.
Optionally, the temperature sensing device is booster diode, and the booster diode includes the first pole
With the second pole, the first pole ground connection, electricity of the second pole of the booster diode under the predetermined current
Pressure value meets voltage-temperature function with temperature；
The step of predetermined current is provided to the temperature sensing device includes：By described second extremely to described
Booster diode provides the predetermined current；
The step of magnitude of voltage for measuring the temperature sensing device, includes：Measure the booster diode second
The magnitude of voltage of pole.
Optionally, the step of corresponding relation for obtaining the electric current of the temperature sensing device and temperature, includes：
Voltage and the temperature of the temperature sensing device are obtained according to the voltage-temperature function of the booster diode
Corresponding relation, the preliminary expression formula of the voltage-temperature function of the booster diode
Wherein IdFor the predetermined current provided to the booster diode, Vd is the booster diode
The voltage of the second pole, T are the temperature of the booster diode, and k is Boltzmann constant, and n, A and Φ are
The constant related to the booster diode self property, the preliminary expression formula can be reduced to
Vd=a T+b；
By predetermined current IdUnder multigroup temperature T for obtaining and electric current IdThe preliminary expression brought into after simplifying
Formula Vd=a T+b, obtain constant a and constant b, obtain the final expression formula of the voltage-temperature function, with
The corresponding relation of voltage of the final expression formula as temperature sensing device and temperature.
Optionally, the step of heating the substrate includes：The substrate temperature is made in 300 models for arriving 800K
In enclosing.
Compared with prior art, technical scheme has advantages below：
In the self-heating effect evaluation system of ldmos transistor of the present invention, the self-heating effect evaluation system bag
Ldmos transistor and temperature sensing device is included, the temperature sensing device is loaded with a predetermined current, used
There is corresponding relation in the voltage of the temperature sensing device is made with temperature；According to temperature measurement unit, energy
The voltage of the temperature sensing device is enough measured, and then obtains the temperature of the temperature sensing device；It is described
The temperature of the temperature sensing device that self-heating effect evaluation unit is obtained according to temperature measurement unit is used as described
The temperature of ldmos transistor, and can be according to the temperature of the ldmos transistor and described
The source-drain current value of ldmos transistor, signal voltage, obtain the source and drain electricity of the ldmos transistor
Relation between flow valuve and signal voltage, temperature.Therefore, the present invention can simulate self-heating effect to described
The impact of ldmos transistor I-V curve, in follow-up circuit design, can obtain according to the present invention
Relation between the source-drain current value of ldmos transistor and signal voltage, temperature, using self-heating effect as
The reference quantity of the source-drain current value of ldmos transistor is affected, so that the design of ldmos transistor
Performance closer to actual performance, to improve the quality of integrated circuit.
Description of the drawings
Fig. 1 is that the function of one embodiment of self-heating effect evaluation system of ldmos transistor of the present invention is illustrated
Figure；
Fig. 2 is the structural representation of one embodiment of self-heating effect evaluation system of ldmos transistor of the present invention
Figure；
Fig. 3 is the schematic diagram of one embodiment of self-heating effect evaluation methodology of ldmos transistor of the present invention.
Specific embodiment
As stated in the Background Art, the self-heating effect of ldmos transistor is to ldmos transistor performance
Affect larger, when semiconductor device design is carried out, need to consider the self-heating effect of ldmos transistor,
Need to find the I-V curve of current a certain model ldmos transistor and ldmos transistor work temperature
The relation of degree, but prior art cannot when ldmos transistor works direct measurement LDMOS it is brilliant
The temperature of body pipe, is also just difficult to carrying out considering self-heating effect this factor when ldmos transistor is designed,
So that the ldmos transistor performance designed is difficult to conformance with standard.
In order to solve the technical problem, the present invention provides a kind of self-heating effect of ldmos transistor and comments
Valency system.
It is understandable for enabling the above objects, features and advantages of the present invention to become apparent from, below in conjunction with the accompanying drawings
The specific embodiment of the present invention is described in detail.
With reference to Fig. 1, one embodiment of self-heating effect evaluation system of ldmos transistor of the present invention is shown
Schematic diagram.The self-heating effect evaluation system of the present embodiment ldmos transistor includes：
Ldmos transistor 201 and ldmos transistor control unit 204.The ldmos transistor control
Unit processed 204 applies grid voltage, right for the grid (not shown) to the ldmos transistor 201
Source electrode (not shown) applies signal voltage, is additionally operable to measure the source and drain electricity of the ldmos transistor 201
Flow valuve
Temperature sensing device, the temperature sensing device are adjacent with the ldmos transistor 201, can
Temperature change is produced in the presence of the self-heating effect of the ldmos transistor 201；The temperature sense
Device is loaded with a predetermined current, has corresponding closing for making the voltage of the temperature sensing device and temperature
System.
Specifically, in the present embodiment, the temperature sensing device is booster diode 202, described
Ldmos transistor 201 and booster diode 202 are adjacent, and the booster diode 202 can be described
Temperature change is produced in the presence of 201 self-heating effect of ldmos transistor.When to the booster diode 202
When applying a predetermined current, voltage and the temperature of the booster diode 202 have corresponding relation.
That is, the performance of the booster diode 202 is subject to the ldmos transistor 201 from thermal effect
The impact answered so that the I-V curve of the booster diode 202 is presented different shape at different temperatures.
With continued reference to Fig. 1, the present embodiment self-heating effect evaluation system also includes temperature measurement unit 203, uses
In the voltage for measuring the temperature sensing device, the temperature of the temperature sensing device is obtained.
Self-heating effect evaluation unit 205, the temperature of the temperature sensing device for being obtained according to temperature measurement unit
The temperature as the ldmos transistor 201 is spent, is additionally operable to according to the ldmos transistor 201
The source-drain current value of temperature and the ldmos transistor 201, signal voltage, obtain the LDMOS
Relation between the source-drain current value of transistor and signal voltage, temperature.
According to the present embodiment self-heating effect evaluation system, can be to the self-heating of the ldmos transistor 201
Effect Evaluation is simulated, obtain the source-drain current value of the ldmos transistor 201 and signal voltage,
Relation between temperature.The method that the self-heating effect evaluation of the ldmos transistor 201 is simulated is big
Cause includes：
The substrate is heated, raises the temperature of temperature sensing device, the temperature sensing device is applied
Predetermined current, at different temperatures, the magnitude of voltage of the temperature sensing device, to obtain the temperature for measurement
The voltage of degree sensing device and the corresponding relation of temperature.
Make the ldmos transistor 201 and temperature sensing device recover room temperature, control the LDMOS brilliant
Body pipe control unit 204 works, and applies grid voltage to the grid of the ldmos transistor 201, to source
Pole applies signal voltage, makes the ldmos transistor 201 work；The temperature sensing device is applied
The predetermined current, the ldmos transistor 201 described in 201 course of work of ldmos transistor from
Heat effect causes the temperature sensing device temperature to raise；
In temperature sensing device temperature elevation process, the temperature is measured using the temperature measurement unit 203
The magnitude of voltage of degree sensing device, and the temperature sense is obtained with the corresponding relation of temperature based on the voltage
The temperature of device, used as the Current Temperatures of the ldmos transistor 201.
Under each temperature value of ldmos transistor 201, the signal voltage change, and measurement stream is made
Cross the source-drain current value of the ldmos transistor 201.
Using the self-heating effect evaluation unit 205, according to the temperature sense that temperature measurement unit 203 is obtained
Temperature of the temperature of device as the ldmos transistor 201, obtains signal voltage under each temperature value
With the corresponding relation of source-drain current value, it is corresponding with source-drain current value with reference to the signal voltage of multiple temperature values
Relation obtains the relation between the signal voltage of the ldmos transistor 201, source-drain current value and temperature.
2 are refer to, the structural representation of the present embodiment self-heating effect evaluation system is shown, with reference to reference to figure
2, the present embodiment self-heating effect evaluation system includes：
Substrate 100, the ldmos transistor 201 and temperature sensing device are located on substrate 100.At this
In embodiment, the substrate 100 is P type substrate.The material of the substrate 100 is silicon.In other embodiment
In, the substrate 100 of the p-type can also be body silicon substrate, body germanium substrate, germanium silicon substrate, carborundum lining
Other Semiconductor substrates such as bottom, silicon-on-insulator substrate or germanium substrate on insulator, or including at least one
The multilayer lamination structure of layer interlayer dielectric layer, can also be formed with transistor, diode in the substrate 100
Deng semiconductor device and metal interconnection structure, the invention is not limited in this regard.
In the present embodiment, doping sealing coat 101, the LDMOS crystal is additionally provided with the substrate 100
Pipe 201 is located on the doping sealing coat 101, and the booster diode 202 is near the LDMOS crystal
One pole of pipe 201 is located on the doping sealing coat 101.In the present embodiment, the doping sealing coat 101
Doping type be N-type.
The booster diode 202 include near the ldmos transistor 201 the first pole 112 and away from
Second pole 113 of the ldmos transistor 201, first pole 112 are located at the doping sealing coat 103
On, the second pole 113 is not provided with the doping sealing coat 103.In the present embodiment, first pole
112 attach most importance to n-type doping area, and second pole 113 is attached most importance to p-type doped region, and first pole 112 is grounded.
In the present embodiment, the doping sealing coat 103 is provided with the first doped layer 102, and described first mixes
The doping type of diamicton 102 is p-type.The ldmos transistor 201 is included on the first doped layer 102
Source electrode 109, drain electrode 110, positioned at source electrode 109, drain electrode 110 between raceway groove (not shown) and institute
The grid 120 on raceway groove is stated, the grid 120 is connected to controlling potential Vg.
The first isolation structure 119, the source electrode 109 and the first isolation is provided between the source electrode 109 and raceway groove
Structure 119 is arranged in a drift region 105, and the drift region 105 is N-type drift region.The source electrode 109
Electrically connect with a controlling potential Vdd, the drain electrode 110 is connected to an electronegative potential (being ground connection in the present embodiment),
The source electrode 109 is identical with the doping type of drain electrode 110.Specifically, in the present embodiment, the source electrode
109 and drain electrode 110 attach most importance to n-type doping area.The source electrode 109 is away from the booster diode 202, the leakage
Pole 110 is near the booster diode 202.
The ldmos transistor 201 also includes the between first pole 112 and drain electrode 110 the 5th
Pole 111, the 5th pole 111 are different with the doping type of drain electrode 110, p-type of attaching most importance to doped region.
The second isolation structure 118, the ldmos transistor are provided between the drain electrode 110 and the 5th pole 111
201 also include the second doped layer 106 on first doped layer 102, second doped layer 106
For p-type lightly doped district, it is connected with the first doped layer 102 of the p-type.The drain electrode 110 and the 5th pole 111
In second doped layer 106, the 5th pole 111 is grounded, for adjusting second doped layer
106 current potential.
The booster diode 202 also includes the 3rd doped region 107 and the 4th doped region 108, first pole
112 are located in the 3rd doped region 107, and second pole 113 is located in the 4th doped region 108, described
The doping type of the 3rd doped region 107 is N-type, and the doping type of the 4th doped region is p-type.
To sum up, the ldmos transistor 201 is N-type ldmos transistor, by arranging the drift
Area 105 so that form high resistant between first pole 112 and the second pole 113 of the ldmos transistor 201
Layer, improves the breakdown voltage of ldmos transistor 201 such that it is able to for high tension apparatus.But this
Invention is not limited to the concrete structure of the ldmos transistor 201.
With continued reference to Fig. 2, in the present embodiment, when the booster diode 202 applies a predetermined current,
The voltage of the booster diode 202 has corresponding relation with temperature.The temperature measurement unit 203 includes：
Diode power source 131, is electrically connected with the second pole 113 of the booster diode 202, for described
202 applied voltage of booster diode.
Voltage measurement unit 132, for measure the booster diode 202 113 voltage of the second pole (due to
First pole 112 is grounded, and 113 voltage of the second pole is the voltage of the booster diode 202).
Computing unit (not shown), 113 voltage of the second pole based on the booster diode 202 and electric current
Corresponding relation, obtains the temperature of booster diode 202 according to the voltage of the booster diode 202.
Specifically, in the present embodiment, first pole 112 and the second pole 113 of the booster diode 202 can
To be connected to peripheral circuit by metal plug, the diode power source 131 and voltage measurement unit 132 can
To be arranged in peripheral circuit.The computing unit, can be arranged on the outside of the booster diode 202
In integrated circuit, the invention is not limited in this regard.
The self-heating effect evaluation system also includes：Heater (not shown), in diode power source
132 heat the substrate 100 when applying a predetermined current to booster diode 202, make the LDMOS brilliant
The temperature of body pipe 201 and booster diode 202 is raised.Specifically, the heater can be heating cushion
Or heating furnace, the invention is not limited in this regard.In the present embodiment, the heater is provided with temperature
Degree metering device, the temperature measurement device are capable of the temperature of heater described in real time reaction.
It should be noted that in the present embodiment, temperature of the computing unit based on heater and institute
The voltage for stating the measurement of voltage measurement unit 132 obtains the voltage pass corresponding with temperature of booster diode 202
System.
In the present embodiment, specifically, the computing unit includes：
Memory element, for storing the preliminary expression formula of the voltage-temperature function of the booster diode
Wherein IdFor the predetermined current provided to the booster diode, Vd is the booster diode the
The voltage of one pole, T is the temperature of the booster diode, and k is Boltzmann constant, n, A and Φ be with
The related constant of the booster diode self property, the preliminary expression formula can be reduced to
Vd=a T+b.
Fitting unit, the step of for the substrate 100 will be heated in, in predetermined current IdUnder obtain
It is preliminary after second pole, the 113 voltage Vd substitutions simplification of multigroup temperature T and the booster diode 202
Expression formula, obtains the final expression formula of the voltage-temperature function, using the final expression formula as temperature
The electric current of sensing device and the corresponding relation of temperature.
Therefore, when the self-heating effect evaluation system using the present embodiment ldmos transistor carries out self-heating effect
Simulation when, in the computing unit, memory element and fitting unit can obtain the electricity of temperature sensing device
The corresponding relation of pressure and temperature.
After the corresponding relation is obtained, make the ldmos transistor 201 and temperature sensing device extensive
Multiple room temperature, applies grid voltage Vg, applies signal to source electrode to the grid of the ldmos transistor 201
Voltage Vdd, makes the ldmos transistor 201 work, and applies described pre- to the booster diode 202
If electric current, the self-heating effect of ldmos transistor 201 described in 201 course of work of ldmos transistor
So that 202 temperature of the booster diode is raised.
In 202 temperature elevation process of booster diode, the measurement of the voltage measurement unit 132 is flow through described
The magnitude of voltage of 202 second pole 113 of booster diode.The computing unit is right with temperature based on the voltage
Should be related to, and the voltage of the measurement of the voltage measurement unit 132, it is obtained in that institute's booster diode 202
Temperature, as the Current Temperatures T of the ldmos transistor 201.The self-heating effect evaluation unit 205
According to the temperature and the source-drain current value of the ldmos transistor 201 of the ldmos transistor 201
Ids, signal voltage Vdd, obtain source-drain current value Ids and the signal voltage of the ldmos transistor 201
Relation between Vdd, temperature T.
It should be noted that in the present embodiment, the ldmos transistor 201 can be prior art
The ldmos transistor of disposable type, is entering line integrated circuit using various model ldmos transistors
Before design, can be using self-heating effect evaluation system of the present invention to required different model
Ldmos transistor carries out the simulation of self-heating effect.
Also, it should be noted that the booster diode 202 in the present embodiment self-heating effect evaluation system is existing
Have for controlling the diode of the current potential of the doping sealing coat 101 and substrate 100 in technology, it is described auxiliary
The first pole 112 of diode 202 is helped to be used for controlling the current potential of the doping sealing coat 101, the auxiliary
Second pole 113 of diode 202 is used for controlling the current potential of the substrate 100.That is, this enforcement
Booster diode 202 and the adjacent structure of ldmos transistor 201 in example self-heating effect evaluation system
It can be LDMOS transistor structure of the prior art so that the present embodiment self-heating effect evaluation system
Simple structure, carries out ldmos transistor self-heating effect mould using the present embodiment self-heating effect evaluation system
Intend, without the need for redesigning to existing ldmos transistor.
Also, it should be noted that in the present embodiment, the temperature measurement unit is also described including being arranged at
Switching device 133 between second pole 113 and diode power source 131, the switching device 133 is in institute
When stating ldmos transistor unlatching, second pole 113 is made to electrically connect with diode power source 131.
The switching device 133 is MOS transistor, the grid of the MOS transistor and the LDMOS
The grid electrical connection of transistor 201, for when the ldmos transistor 201 is opened, making the MOS
Transistor is opened, and then second pole 113 is electrically connected with diode power source 131.
It is such to be advantageous in that, by arranging the switching device 133, can realize to the LDMOS
When the grid of transistor 201 applies grid voltage Vg, synchronously apply described to the booster diode 202
Predetermined current, therefore the temperature obtained by 202 first pole of the booster diode, 103 magnitude of voltage measurement can
Reflect that the temperature that 201 self-heating effect of the ldmos transistor causes is raised much sooner, make the temperature
The temperature that degree sensing device measurement is obtained is more accurate.But whether the present invention is to arranging the switching device 133
It is not limited.
The present invention also provides a kind of ldmos transistor self-heating effect evaluation methodology, the self-heating effect evaluation
Method can be, but not limited to be applied to self-heating effect evaluation system provided by the present invention.LDMOS of the present invention
The application conditions of transistor self-heating effect evaluation methodology are：Ldmos transistor is located on substrate, the lining
Temperature sensing device is additionally provided with bottom, and the ldmos transistor and temperature sensing device are adjacent, described
Temperature sensing device can produce temperature change in the presence of the ldmos transistor self-heating effect, institute
Stating self-heating effect evaluation methodology includes：
The self-heating effect evaluation system of the ldmos transistor that the present invention is provided is provided.Specifically, in this reality
Apply in example, the self-heating effect evaluation system described in above-described embodiment can be provided, therefore can be with continued reference to
Fig. 1 to Fig. 2, the concrete structure of the self-heating effect evaluation system will not be described here.
With continued reference to Fig. 2, in the present embodiment, the evaluation methodology is specifically included：
The substrate 100 is heated, raises the temperature of booster diode 202, to the booster diode
202 apply predetermined current, and at different temperatures, the magnitude of voltage of the booster diode 202, to obtain for measurement
Obtain the voltage of the booster diode 202 and the corresponding relation of temperature.
It should be noted that in the present embodiment, the step of predetermined current is applied to the temperature sensing device
Suddenly include：Predetermined current is applied by the booster diode 202 of second pole 113 pairs；Measurement stream
The step of magnitude of voltage for crossing the temperature sensing device, includes：Measure 202 second pole of the booster diode
113 magnitude of voltage.
After obtaining the voltage of the booster diode 202 and the corresponding relation of temperature, the LDMOS is made
Transistor 201 and booster diode 202 recover room temperature, the grid to the ldmos transistor 201
120 apply grid voltage Vg, apply signal voltage Vdd to source electrode 109, make the LDMOS crystal
Pipe 201 works.
The predetermined current is applied by the booster diode 202 of second pole 113 pairs,
The self-heating effect of ldmos transistor 201 described in 201 course of work of ldmos transistor causes described
202 temperature of booster diode is raised.
In 202 temperature elevation process of booster diode, 202 second pole 113 of booster diode is measured
Magnitude of voltage, and the corresponding relation based on the voltage and temperature obtains the temperature of the booster diode 202
Degree, used as the Current Temperatures of the ldmos transistor 201.
Under each temperature value of ldmos transistor 201, the signal voltage change is made, and is measured
Flow through the source-drain current value of the ldmos transistor 201, obtain under each temperature value signal voltage with
The corresponding relation of source-drain current value, with reference to the signal voltage pass corresponding with source-drain current value of multiple temperature values
System obtains the signal voltage of the ldmos transistor 201, the relation between source-drain current value and temperature.
Therefore, evaluation methodology of the present invention can be used in evaluating self-heating effect to the ldmos transistor
The impact of 201I-V curves, in follow-up circuit design, the LDMOS that can be obtained according to the present invention
Relation between the source-drain current value of transistor 201 and signal voltage, temperature, using self-heating effect as
The reference quantity of the source-drain current value of ldmos transistor 201, so that ldmos transistor 201
Design performance closer to actual performance, to improve the quality of integrated circuit.
Specifically, in the present embodiment, the voltage for obtaining the booster diode 202 is corresponding with temperature
The step of relation, includes：
The voltage of the temperature sensing device is obtained according to the voltage-temperature function of the booster diode 202
With the corresponding relation of temperature, the preliminary expression formula of the voltage-temperature function of the booster diode 202
Wherein IdIt is the predetermined current provided by the booster diode 202, Vd is the booster diode
The voltage of 202 second poles 113, T is the temperature of the booster diode 202, and k is Boltzmann constant, n,
A and Φ are the constant related to 202 self property of the booster diode.
In the present embodiment, the step of heating substrate 100 includes：The substrate temperature is made 300
To in the range of 800K.With reference to Fig. 3, show that T*lnT is right with T when temperature T is 300 to 800K
Should be related to, wherein value of the abscissa for temperature T, unit is K, and vertical coordinate is T*lnT.Can be seen by Fig. 3
Go out, when temperature T is 300 to 800K, the value of T*lnT is substantially linear with T, therefore, work as temperature
, at 300 to 800K, the Vd and T in the preliminary expression formula is substantially linear for degree T, described first
Step expression formula can be reduced to Vd=a T+b.That is, the booster diode 202 can be measured that
Effective temperature within 800K, it should be noted that 202 self-heating effect of the ldmos transistor draws
The elevated scope of temperature is played substantially also in the range of 300 to 800K.
By predetermined current IdUnder multigroup temperature T for obtaining and electric current IdThe preliminary expression brought into after simplifying
Formula Vd=a T+b, obtain constant a and constant b, obtain the final expression formula of the voltage-temperature function, with
The corresponding relation of voltage of the final expression formula as temperature sensing device and temperature.
Thus, it is possible to find out, the electric current that the present embodiment obtains the temperature sensing device is corresponding with temperature
The method of relation is predetermined current I provided to the booster diode 202d, it is described auxiliary according to measuring
The magnitude of voltage of 202 second pole 113 of diode is helped, the corresponding relation of voltage and temperature is obtained, in temperature T
At 300 to 800K, the voltage is relatively simple with the corresponding relation of temperature so that subsequently based on described
The temperature that voltage obtains the booster diode 202 with the corresponding relation of temperature is convenient and accurate,
And then the signal voltage of the ldmos transistor 202, source-drain current value and the temperature for causing to obtain it
Between relation it is more accurate.
Also, it should be noted that in the present embodiment, the temperature measurement unit is also described including being arranged at
Switching device 133 between second pole 113 and diode power source 131, the switching device 133 is in institute
When stating ldmos transistor unlatching, second pole 113 is made to electrically connect with diode power source 131.
The switching device 133 is MOS transistor, the grid of the MOS transistor and the LDMOS
The grid electrical connection of transistor 201, for when the ldmos transistor 201 is opened, making the MOS
Transistor is opened, and then second pole 113 is electrically connected with diode power source 131.
It is such to be advantageous in that, by arranging the switching device 133, obtain the booster diode 202
Voltage and the corresponding relation of temperature after apply in the grid 120 to the ldmos transistor 201
Grid voltage Vg, to source electrode 109 apply signal voltage Vdd, make 201 work of the ldmos transistor
In the step of making, the predetermined current is applied to the booster diode 202 synchronously, therefore by described
The temperature that 202 second pole of booster diode, 113 magnitude of voltage measurement is obtained can reflect described much sooner
The temperature that 201 self-heating effect of ldmos transistor causes is raised, and obtains the temperature sensing device measurement
Temperature it is more accurate.But the present invention is not limited to whether arranging the switching device 133.
Although present disclosure is as above, the present invention is not limited to this.Any those skilled in the art,
Without departing from the spirit and scope of the present invention, can make various changes or modifications, therefore the guarantor of the present invention
Shield scope should be defined by claim limited range.
Claims (15)
1. the self-heating effect evaluation system of a kind of ldmos transistor, it is characterised in that include：
Ldmos transistor；
Ldmos transistor control unit, for applying to the grid and source electrode of the ldmos transistor respectively
Plus grid voltage and signal voltage, the ldmos transistor is produced self-heating effect and is measured described
The source-drain current value of ldmos transistor；
Temperature sensing device, it is adjacent with the ldmos transistor, can be in the ldmos transistor certainly
Temperature change is produced in the presence of heat effect；The temperature sensing device is loaded with a predetermined current, is used for
The voltage and temperature for making the temperature sensing device has corresponding relation；
Temperature measurement unit, for measuring the voltage of the temperature sensing device, to obtain the temperature sense
The temperature of device, and as the temperature of the ldmos transistor；
Self-heating effect evaluation unit, the temperature of the ldmos transistor for being obtained according to temperature measurement unit
The source-drain current value of the ldmos transistor that degree, the ldmos transistor control unit are obtained and signal
Voltage, obtains the source-drain current value of the ldmos transistor, the relation between signal voltage and temperature.
2. self-heating effect evaluation system according to claim 1, it is characterised in that the temperature inductor
Part is booster diode.
3. self-heating effect evaluation system according to claim 2, it is characterised in that the LDMOS crystal
Pipe and the booster diode are formed on a substrate, are additionally provided with doping sealing coat in the substrate, described
Ldmos transistor is located on the doping sealing coat.
4. self-heating effect evaluation system according to claim 3, it is characterised in that the booster diode
Including first pole and the second pole away from the ldmos transistor of the close ldmos transistor,
First pole is located on the doping sealing coat, and the second pole is not provided with the doping sealing coat.
5. self-heating effect evaluation system according to claim 4, it is characterised in that the booster diode
The first pole ground connection, the temperature measurement unit is for providing described to the second pole of the booster diode
Predetermined current, has corresponding relation for making the voltage of the second pole of the booster diode and temperature；
The temperature measurement unit includes：
Power supply, is electrically connected with the second pole of the booster diode, for providing electricity for the booster diode
Stream；
Voltage measurement unit, for measuring the voltage of the second pole of the booster diode；
The corresponding relation of computing unit, the voltage based on the second pole of booster diode and temperature, according to described auxiliary
Help the temperature of the voltage acquisition booster diode of the second pole of diode.
6. self-heating effect evaluation system according to claim 5, it is characterised in that the temperature survey list
Unit also includes the switching device being arranged between second pole and power supply, and the switching device is in institute
When stating ldmos transistor unlatching, second pole and power electric connection is made.
7. self-heating effect evaluation system according to claim 5, it is characterised in that the switching device is
MOS transistor, the grid of the MOS transistor are electrically connected with the grid of the ldmos transistor, are used
In opening, the MOS transistor when the ldmos transistor is opened, and then make second pole
With power electric connection.
8. self-heating effect evaluation system according to claim 5, it is characterised in that the self-heating effect is commented
Valency system also includes：
Heater, for heating the substrate when power supply applies the predetermined current to booster diode, makes
The temperature of the booster diode is raised；
The voltage of temperature of the computing unit based on heater and voltage measurement unit measurement is aided in
The voltage of diode and the corresponding relation of temperature.
9. self-heating effect evaluation system according to claim 5, it is characterised in that on the heater
Temperature measurement device is provided with, for the temperature of heater described in real time reaction.
10. self-heating effect evaluation system according to claim 8, it is characterised in that the computing unit bag
Include：
Memory element, for storing the preliminary expression formula of the voltage-temperature function of the booster diode
Wherein IdFor the predetermined current provided to the booster diode, Vd is the booster diode first
The voltage of pole, T are the temperature of the booster diode, and k is Boltzmann constant, and n, A and Φ are and institute
The related constant of booster diode self property is stated, the preliminary expression formula is reduced to into Vd=a T+b；
Fitting unit, the step of for the substrate will be heated in, the multigroup temperature obtained under the predetermined current
Degree T and the second pole tension of booster diode Vd substitutes into the preliminary expression formula after the simplification, obtains described
The final expression formula of voltage-temperature function, using the final expression formula as the voltage of temperature sensing device with
The corresponding relation of temperature.
11. self-heating effect evaluation systems according to claim 2, it is characterised in that the booster diode
The effective temperature that can be measured that is within 800K.
A kind of self-heating effect evaluation methodology of 12. ldmos transistors, the ldmos transistor are located at substrate
On, temperature sensing device, the ldmos transistor and temperature sensing device is additionally provided with the substrate
Adjacent, the temperature sensing device can produce temperature in the presence of the ldmos transistor self-heating effect
Degree change, it is characterised in that the evaluation methodology includes：
The substrate is heated, raises the temperature of temperature sensing device, one is applied to the temperature sensing device
Predetermined current, at different temperatures, the magnitude of voltage of the temperature sensing device, to obtain the temperature for measurement
The voltage of degree sensing device and the corresponding relation of temperature；
The ldmos transistor and temperature sensing device is made to recover room temperature, to the ldmos transistor
Grid applies grid voltage, applies signal voltage to source electrode, makes the ldmos transistor work；
The predetermined current, the institute in the ldmos transistor course of work are applied to the temperature sensing device
The self-heating effect for stating ldmos transistor causes the temperature sensing device temperature to raise；
In temperature sensing device temperature elevation process, the magnitude of voltage of the temperature sensing device, and base are measured
The temperature of the temperature sensing device is obtained with the corresponding relation of temperature in the voltage, as described
The Current Temperatures of ldmos transistor；
Under each temperature value of ldmos transistor, the signal voltage change is made, and institute is flow through in measurement
The source-drain current value of ldmos transistor is stated, signal voltage and source-drain current value under each temperature value is obtained
Corresponding relation, with reference to described in the signal voltage of multiple temperature values and the corresponding relation of source-drain current value are obtained
The signal voltage of ldmos transistor, the relation between source-drain current value and temperature.
13. self-heating effect evaluation methodologys according to claim 12, it is characterised in that the temperature inductor
Part is booster diode, and the booster diode includes the first pole and the second pole, and first pole is grounded,
Magnitude of voltage of the second pole of the booster diode under the predetermined current meets voltage-temperature letter with temperature
Number；
The step of predetermined current is provided to the temperature sensing device includes：By described second extremely to the auxiliary
Diode provides the predetermined current；
The step of magnitude of voltage for measuring the temperature sensing device, includes：Measure the second pole of the booster diode
Magnitude of voltage.
14. self-heating effect evaluation methodologys according to claim 13, it is characterised in that obtain the temperature sense
The step of corresponding relation for answering the electric current of device and temperature, includes：According to the voltage-temperature of the booster diode
Degree function obtains the voltage of the temperature sensing device and the corresponding relation of temperature, the booster diode
The preliminary expression formula of voltage-temperature function
Wherein IdFor the predetermined current provided to the booster diode, Vd is the booster diode second
The voltage of pole, T are the temperature of the booster diode, and k is Boltzmann constant, and n, A and Φ are and institute
The related constant of booster diode self property is stated, the preliminary expression formula can be reduced to Vd=a T+b；
By predetermined current IdUnder multigroup temperature T for obtaining and electric current IdThe preliminary expression formula brought into after simplifying
Vd=a T+b, obtain constant a and constant b, obtain the final expression formula of the voltage-temperature function, with institute
State the corresponding relation of voltage of the final expression formula as temperature sensing device and temperature.
15. self-heating effect evaluation methodologys according to claim 12, it is characterised in that the heating substrate
Step includes：The substrate temperature is made in the range of 300 to 800K.
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