CN106522932A - Method and device for obtaining resistivity of anisotropic formation of horizontal well - Google Patents
Method and device for obtaining resistivity of anisotropic formation of horizontal well Download PDFInfo
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- CN106522932A CN106522932A CN201610862241.6A CN201610862241A CN106522932A CN 106522932 A CN106522932 A CN 106522932A CN 201610862241 A CN201610862241 A CN 201610862241A CN 106522932 A CN106522932 A CN 106522932A
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- E—FIXED CONSTRUCTIONS
- E21—EARTH DRILLING; MINING
- E21B—EARTH DRILLING, e.g. DEEP DRILLING; OBTAINING OIL, GAS, WATER, SOLUBLE OR MELTABLE MATERIALS OR A SLURRY OF MINERALS FROM WELLS
- E21B49/00—Testing the nature of borehole walls; Formation testing; Methods or apparatus for obtaining samples of soil or well fluids, specially adapted to earth drilling or wells
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- E—FIXED CONSTRUCTIONS
- E21—EARTH DRILLING; MINING
- E21B—EARTH DRILLING, e.g. DEEP DRILLING; OBTAINING OIL, GAS, WATER, SOLUBLE OR MELTABLE MATERIALS OR A SLURRY OF MINERALS FROM WELLS
- E21B47/00—Survey of boreholes or wells
-
- E—FIXED CONSTRUCTIONS
- E21—EARTH DRILLING; MINING
- E21B—EARTH DRILLING, e.g. DEEP DRILLING; OBTAINING OIL, GAS, WATER, SOLUBLE OR MELTABLE MATERIALS OR A SLURRY OF MINERALS FROM WELLS
- E21B47/00—Survey of boreholes or wells
- E21B47/02—Determining slope or direction
- E21B47/022—Determining slope or direction of the borehole, e.g. using geomagnetism
Abstract
The invention discloses a method and device for obtaining the resistivity of an anisotropic formation of a horizontal well, and relates to the technical field of geophysical exploration. The method comprises the steps that the relation among the preset horizontal resistivity, the deep and medium induction value difference, the log value of the deep induction value and the resistivity anisotropic coefficient of an experiment formation under different hole drift angle conditions is established through a numerical simulation method; and then the resistivity anisotropic coefficient of the target formation is obtained through fitting and calculating. The anisotropic resistivity obtained through the method can provide more accurate data support for formation mud containing situation analyzing and formation horizontal or vertical resistivity calculation so as to make an analyzing and calculation result more approximate to the practical formation situation, and the accuracy of reservoir assessment is facilitated accordingly.
Description
Technical field
The present invention relates to technical field of geophysical exploration, more particularly to a kind of to obtain horizontal well anisotropic formation resistance
The method and device of rate.
Background technology
Formation resistivity is one of important parameter of evaluating reservoir, formation resistivity and well logging current potential, drilling time, oil gas
The oil exploration parameter such as reserves and oil saturation is closely coupled, and in horizontal well, Jing is often as stratum has resistivity
Anisotropy and make measured resistivity distortion.Therefore, obtaining anisotropic formation horizontal resistivity and vertical resistivity is
One important process step of oil exploration.In prior art, the stratum level resistance is obtained generally according to laboratory measurement
Rate and vertical resistivity, but continuous stratum horizontal resistivity and vertical resistivity cannot be obtained according to actual measured value directly.
There is resistivity anisotropy phenomenon in many stratum, the especially needed consideration in the stratum in horizontal hole, because level
In well, resistivity anisotropy affects very big to apparatus measures, and at this moment double to sense the resistivity for measuring be horizontal resistivity and vertical
The integrated value of resistivity.Anisotropy is mostly due in stratum be mingled with other stratum with different resistivity and produce
Raw, it is layer by layer deposition that stratum is formed, therefore resistivity horizontally and vertically can most reflect the true feelings on stratum
Condition.The resistivity measured with the double sensings of cable deviates true formation resistivity, is calculated according to the resistivity that double sensings are measured
The parameter value error such as oil saturation for obtaining is also relatively large.
The content of the invention
In order to overcome the drawbacks described above of prior art, a kind of acquisition horizontal well anisotropy in the embodiment of the present invention, is provided
The method and device of formation resistivity, which can more accurately obtain horizontal well anisotropically layer resistivity.
The concrete technical scheme of the embodiment of the present invention is：
A kind of method for obtaining horizontal well anisotropically layer resistivity, which comprises the following steps：
Obtain the horizontal resistivity of the dual induction log data, hole angle curve data and formation at target locations of formation at target locations；
Different pre- of formation at target locations is obtained based on the horizontal resistivity and different preset resistance rate anisotropy coefficients
If the vertical resistivity under resistivity anisotropy coefficient；
Based on the vertical resistor under the horizontal resistivity preset resistance rate anisotropy coefficient different with formation at target locations
Rate obtains the dual induction log under preset resistance rate anisotropy coefficient of the formation at target locations under different default hole angles, different
Response value；
Under the conditions of preset resistance rate anisotropy coefficient of the formation at target locations under different default hole angles, different
Dual induction log response value sets up the first coordinate system, and the discrete point of different preset level resistivity is inserted first coordinate
It is fitted in system and obtains the first fitting Series of Equations；
According to first is fitted the acquisition of Series of Equations, the dual induction log data of formation at target locations and hole angle curve data
Horizontal resistivity of the formation at target locations under the conditions of actual hole angle；
Based on the double senses under preset resistance rate anisotropy coefficient of the formation at target locations under different default hole angles, different
The deep induction value in log response value and resistivity anisotropy coefficient is answered to set up the second coordinate system, by different preset level electricity
The discrete point of resistance rate is fitted in inserting second coordinate system and obtains the second fitting Series of Equations；
Obtained based on the dual induction log data of formation at target locations, hole angle curve data and the second fitting Series of Equations
Resistivity anisotropy coefficient of the formation at target locations under the conditions of actual hole angle；
Horizontal resistivity and formation at target locations based on the formation at target locations under the conditions of actual hole angle is in actual hole angle
Under the conditions of resistivity anisotropy coefficient obtain vertical resistivity of the formation at target locations under the conditions of actual hole angle.
In one preferred embodiment, dual induction log response value includes deep induction value and middle influence value, feels in depth
Answer difference=deep induction value-middle influence value.
In one preferred embodiment, it is described based on formation at target locations under different default hole angles, it is different
In the step of dual induction log response value under the conditions of preset resistance rate anisotropy coefficient sets up the first coordinate system, to feel in depth
The abscissa that difference is rectangular coordinate system is answered, and the is set up using the logarithm value of deep induction value as the vertical coordinate of the rectangular coordinate system
One coordinate system.
In one preferred embodiment, different default hole angles presets step by first in the range of 75 ° to 90 °
Long incremental value.
In one preferred embodiment, the first default step-length is 5 degree.
In one preferred embodiment, when default hole angle rises to 90 degree, it is assumed that default hole angle is 89 degree
Replace 90 degree.
In one preferred embodiment, different preset resistance rate anisotropy coefficients is in the range of 1.0 to 4.0
It is incremented by value by the second default step-length.
In one preferred embodiment, the second default step-length is 0.5.
In one preferred embodiment, different preset level resistivity is respectively 2 Ω m, 5 Ω m, 10 Ω
M, 20 Ω m, 50 Ω m and 100 Ω m.
In one preferred embodiment, described based on the dual induction log data of formation at target locations, hole deviation angular curve
Data and the second fitting Series of Equations obtain resistivity anisotropy coefficient of the formation at target locations under the conditions of actual hole angle
The step of in, when actual hole angle not second fitting Series of Equations on when, formation at target locations is obtained in the reality using interpolation method
Resistivity anisotropy coefficient under hole angle.
In one preferred embodiment, survey in the double sensings according to the first fitting Series of Equations, formation at target locations
During well data and hole angle curve data obtain the formation at target locations the step of horizontal resistivity under the conditions of actual hole angle,
When actual hole angle not on the first fitting Series of Equations when, formation at target locations is obtained under the actual hole angle using interpolation method
Horizontal resistivity.
A kind of device for obtaining horizontal well anisotropically layer resistivity, including：
Data acquisition module, which is used for obtaining the dual induction log data of formation at target locations, hole angle curve data and target
The horizontal resistivity on stratum；
Computing module, which is used for according to the horizontal resistivity preset resistance rate anisotropy system different with formation at target locations
Vertical resistivity under several obtains preset resistance rate anisotropy coefficient of the formation at target locations under different default hole angles, different
Under dual induction log response value；
First fitting module, which is used for the preset resistance rate according to formation at target locations under different default hole angles, different
Dual induction log response value under the conditions of anisotropy coefficient sets up the first coordinate system, by different preset level resistivity from
Scatterplot is fitted in inserting first coordinate system and obtains the first fitting Series of Equations；
Horizontal resistivity acquisition module, which is used for the dual induction log number according to the first fitting Series of Equations, formation at target locations
Horizontal resistivity of the formation at target locations under the conditions of actual hole angle is obtained according to hole angle curve data；
Second fitting module, which is used for the preset resistance rate according to formation at target locations under different default hole angles, different
The deep induction value in dual induction log response value and resistivity anisotropy coefficient under anisotropy coefficient sets up the second coordinate
System, obtains the second fitting series by being fitted in discrete point insertion second coordinate system of different preset level resistivity
Equation；
Resistivity anisotropy coefficient acquisition module, which is used for the dual induction log data according to formation at target locations, hole angle
Curve data and the second fitting Series of Equations obtain resistivity anisotropy of the formation at target locations under the conditions of actual hole angle
Coefficient；
Vertical resistivity acquisition module, which is used for the level resistance according to the formation at target locations under the conditions of actual hole angle
The resistivity anisotropy coefficient of rate and formation at target locations under the conditions of actual hole angle obtains formation at target locations in actual hole angle bar
Vertical resistivity under part.
The method for obtaining horizontal well anisotropically layer resistivity in the embodiment of the present invention can effectively avoid electricity consumption
The resistivity that the double sensings of cable are measured deviates the situation of true formation resistivity, the horizontal resistivity of gained after this method process
The practical situation on stratum is more nearly with vertical resistivity, and then contributes to the accuracy of evaluating reservoir.
Description of the drawings
Accompanying drawing described here is only used for task of explanation, and is not intended to by any way limit model disclosed by the invention
Enclose.In addition, shape and proportional sizes of each part in figure etc. are only schematic, the understanding of the present invention is used to help, and
It is not the shape and proportional sizes for specifically limiting each part of the invention.Those skilled in the art under the teachings of the present invention, can
Implement the present invention to select various possible shapes and proportional sizes as the case may be.
Fig. 1 is flow chart of the present invention in embodiment.
Fig. 2 is preset under hole angles, under different preset resistance rate anisotropy coefficients for 75 degree in the embodiment of the present invention
First coordinate system.
Fig. 3 is preset under hole angles, under different preset resistance rate anisotropy coefficients for 80 degree in the embodiment of the present invention
First coordinate system.
Fig. 4 is preset under hole angles, under different preset resistance rate anisotropy coefficients for 85 degree in the embodiment of the present invention
First coordinate system.
Fig. 5 is preset under hole angles, under different preset resistance rate anisotropy coefficients for 89 degree in the embodiment of the present invention
First coordinate system.
Fig. 6 is preset under hole angles, under different preset resistance rate anisotropy coefficients for 75 degree in the embodiment of the present invention
Second coordinate system.
Fig. 7 is preset under hole angles, under different preset resistance rate anisotropy coefficients for 80 degree in the embodiment of the present invention
Second coordinate system.
Fig. 8 is preset under hole angles, under different preset resistance rate anisotropy coefficients for 85 degree in the embodiment of the present invention
Second coordinate system.
Fig. 9 is preset under hole angles, under different preset resistance rate anisotropy coefficients for 89 degree in the embodiment of the present invention
Second coordinate system.
Figure 10 is the structural representation for obtaining the horizontal well anisotropically device of layer resistivity in the embodiment of the present invention.
Specific embodiment
With reference to the description of accompanying drawing and the specific embodiment of the invention, the details of the present invention can be clearly understood.But
It is, the specific embodiment of invention described herein to be only used for explaining the purpose of the present invention, and can not understands by any way
Into being limitation of the present invention.Under the teachings of the present invention, technical staff is contemplated that any possible change based on the present invention
Shape, these are regarded as belonging to the scope of the present invention.
In order to more accurately obtain horizontal well anisotropically layer resistivity, Fig. 1 is the present invention in embodiment
Flow chart, as shown in figure 1, in this application applicant proposed a kind of side for obtaining horizontal well anisotropically layer resistivity
Method, the method are comprised the following steps：
S101：Obtain the level resistance of the dual induction log data, hole angle curve data and formation at target locations of formation at target locations
Rate.
Dual induction log data, hole angle curve data and the mesh of formation at target locations are acquired by existing conventional method
The horizontal resistivity on mark stratum, wherein can be obtaining the level of formation at target locations according to modes such as laboratory measurement, the double sensings of cable
Resistivity, the horizontal resistivity of the formation at target locations may deviate the practical situation on stratum.
S102：Formation at target locations is obtained based on the horizontal resistivity and different preset resistance rate anisotropy coefficients different
Preset resistance rate anisotropy coefficient under vertical resistivity.Specially calculate the formation at target locations according to the horizontal resistivity to exist
Vertical resistivity under different preset resistance rate anisotropy coefficients, wherein, preset resistance rate anisotropy coefficient refers to ground
The square root of layer vertical direction resistivity and horizontal direction resistivity ratio.In embodiments of the present invention, the different default electricity
Resistance rate anisotropy coefficient (λ) is in the range of 1.0 to 4.0 to be incremented by value by the second default step-length, and the second default step-length can
Think 0.5.
S103：It is vertical under based on the horizontal resistivity preset resistance rate anisotropy coefficient different with formation at target locations
Resistivity obtains the double sensings under preset resistance rate anisotropy coefficient of the formation at target locations under different default hole angles, different
Log response value.Specifically according to the horizontal resistivity, vertical resistivity that obtain in step S101 and S102, using double senses
Logging instrument is answered to measure and calculate the formation at target locations in different default hole angles, different preset resistance rates using finite element method (FEM)
Dual induction log response value under the conditions of anisotropy coefficient.Dual induction log response value includes：Deep induction value and middle influence value.
Wherein, the different default hole angle is referred to, in the range of 75 to 90 ° is incremented by value by the first default step-length.First presets
Step-length can be 5 degree.As stratum is in layer distributed, well can not possibly be not up to other on a stratum completely
Layer, so default hole angle is not generally possible to as 90 degree in fully horizontal, so it is assumed herein that last default hole angle is
89 degree replace 90 degree, and as 89 degree are essentially close to 90 degree, the error for calculating generation under the hypothesis is less and under the hole angle
Meet well another stratum can be reached from a stratum.
S104：Based on preset resistance rate anisotropy coefficient bar of the formation at target locations under different default hole angles, different
Dual induction log response value under part sets up the first coordinate system, by the insertion of the discrete point of different preset level resistivity described the
It is fitted in one coordinate system and obtains the first fitting Series of Equations.
Sensing in depth is calculated by the dual induction log response value under the conditions of different preset resistance rate anisotropy coefficients poor
Value, the formula for sensing difference in depth are specially：Difference=deep induction value-middle influence value is sensed in depth.
Difference and deep induction logarithm value and the first coordinate system of preset level resistivity is sensed in resettling depth, and in coordinate
The discrete point of different preset level resistivity is inserted in system.Specifically.Horizontal seat of the difference as rectangular coordinate system is sensed with depth
Mark, using the logarithm value of deep induction value as the vertical coordinate of the rectangular coordinate system, and further inserts in first coordinate system
The discrete point of different preset level resistivity, sense difference and depth so as to be formed in the depth in certain work area as shown in Fig. 2～Fig. 5
First coordinate system of the logarithm value of influence value.Wherein, the X-axis of the point on curve and Y-axis numerical value are illustrated respectively according to step-length meter
Difference and deep induction logarithm value is sensed in depth under the default hole angle of the difference of calculation, different preset level resistivity.It is different
Preset level resistivity be respectively 2 Ω m, 5 Ω m, 10 Ω m, 20 Ω m, 50 Ω m and 100 Ω m.
Above-mentioned discrete point is fitted to into a plurality of curve, and the first fitting Series of Equations is obtained respectively according to a plurality of curve, the
One fitting Series of Equations includes multiple equations that a plurality of curve is obtained.
First of each matched curve acquisition according to Fig. 2-Fig. 5 is fitted Series of Equations as shown in table 1- tables 4, wherein,
Deep induction logarithm value is Y, and it is X to sense difference in depth.
Table 1
| Horizontal resistivity/Ω .m | First fitting Series of Equations (75 ° of hole angle) |
| 100 | Y=0.1351x3-0.5319x2+0.7495x+2.0 |
| 50 | Y=0.3557x3-1.0148x2+1.0392x+1.699 |
| 20 | Y=1.1013x3-2.1453x2+1.5235x+1.301 |
| 10 | Y=2.2175x3-3.3889x2+1.9396x+1.0 |
| 5 | Y=4.9107x3-5.8308x2+2.5861x+0.699 |
| 2 | Y=18.374x3-14.661x2+4.0771x+0.301 |
Table 2
| Horizontal resistivity/Ω .m | First fitting Series of Equations (80 ° of hole angle) |
| 100 | Y=0.044x3-0.2671x2+0.5671x+2.0 |
| 50 | Y=0.1138x3-0.5037x2+0.7825x+1.699 |
| 20 | Y=0.3812x3-1.1329x2+1.1889x+1.301 |
| 10 | Y=0.9042x3-2.0239x2+1.6098x+1.0 |
| 5 | Y=1.9219x3-3.3318x2+2.0797x+0.699 |
| 2 | Y=6.1666x3-7.439x2+3.0975x+0.301 |
Table 3
| Horizontal resistivity/Ω .m | First fitting Series of Equations (85 ° of hole angle) |
| 100 | Y=0.0184x3-0.1565x2+0.4565x+2.0 |
| 50 | Y=0.0486x3-0.2998x2+0.636x+1.699 |
| 20 | Y=0.1636x3-0.6774x2+0.9675x+1.301 |
| 10 | Y=0.3874x3-1.2071x2+1.3157x+1.0 |
| 5 | Y=0.867x3-2.0654x2+1.7233x+0.699 |
| 2 | Y=2.5638x3-4.3379x2+2.4915x+0.301 |
Table 4
| Horizontal resistivity/Ω .m | First fitting Series of Equations (89 ° of hole angle) |
| 100 | Y=0.0134x3-0.1292x2+0.4236x+2.0 |
| 50 | Y=0.0406x3-0.2709x2+0.6108x+1.699 |
| 20 | Y=0.1606x3-0.7306x2+1.0571x+1.301 |
| 10 | Y=0.2778x3-0.9849x2+1.2016x+1.0 |
| 5 | Y=0.7625x3-1.942x2+1.7026x+0.699 |
| 2 | Y=1.8897x3-3.5523x2+2.2641x+0.301 |
S105：Obtained according to the first fitting Series of Equations, the dual induction log data of formation at target locations and hole angle curve data
Take horizontal resistivity of the formation at target locations under the conditions of actual hole angle.
When actual hole angle be the multiple of 5 ° of step-length and data point on certain curve when, directly according in table 1- tables 4
Corresponding fit equation solves horizontal resistivity of the formation at target locations under the actual hole angle.
When actual hole angle be not 5 ° of multiple or data point not on certain curve when, then using the interpolation calculation mesh
The horizontal resistivity on mark stratum.For example, if sensing difference in depth during 83 ° of hole angle and deep induction logarithm value is respectively 1.0 Hes
1.7, corresponding horizontal resistivity when first calculating 80 ° of hole angle：Understand that the point is 10 between horizontal resistivity by y=1.7 and Fig. 3
Between two curves of Ω .m and 20 Ω .m, by table 2 the 4th and the 3rd fit equation, y1=after x=1.0 is substituted into, is obtained
1.4901st, y2=1.7382, can obtain its horizontal resistivity Rh1=10.0+ (20.0-10.0)/(1.7382- by linear interpolation method
1.4901) × (1.7-1.4901)=18.46 (Ω .m)；Corresponding horizontal resistivity when calculating 85 ° of hole angle again：By y=1.7
And Fig. 4 understands that the point is between two curves of 10 Ω .m and 20 Ω .m, by table 3 the 4th and the 3rd fitting side between horizontal resistivity
Journey, obtains y1=1.4960, y2=1.7547 after x=1.0 is substituted into, can obtain its horizontal resistivity Rh2=by linear interpolation method
10.0+ (20.0-10.0)/(1.7547-1.4960) × (1.7-1.4960)=17.88 (Ω .m)；83 ° of hole angle is calculated finally
When corresponding horizontal resistivity：Rh=18.46+ (17.88-18.46)/(85.0-80.0) × (83.0-80.0)=18.112
(Ω.m)。
S106：Based under preset resistance rate anisotropy coefficient of the formation at target locations under different default hole angles, different
Dual induction log response value in deep induction value and resistivity anisotropy coefficient set up the second coordinate system, will be different default
The discrete point of horizontal resistivity is fitted in inserting second coordinate system and obtains the second fitting Series of Equations.
The double senses set up under preset resistance rate anisotropy coefficient of the formation at target locations under different default hole angles, different
The second coordinate system of the deep induction value in log response value and resistivity anisotropy coefficient is answered, specifically, with deep induction value
Abscissa of the logarithm value for rectangular coordinate system, using resistivity anisotropy coefficient as the vertical coordinate of the rectangular coordinate system, and
The discrete point of different preset level resistivity is inserted in the coordinate system further, so as to form as shown in figs. 6-9 certain
Discrete point is fitted to the second fitting by the logarithm value of the deep induction value in work area and the second coordinate system of resistivity anisotropy coefficient
Series of Equations, the fit equation can include quadratic equation with one unknown.Wherein, the X-axis and Y-axis of the point on curve be illustrated respectively in by
Logarithm value and the electricity of the deep induction value under hole angle, different preset level resistivity are preset according to the difference of different step size computations
Resistance rate anisotropy coefficient.Second fitting Series of Equations such as 5～table of table 8 that each matched curve according to Fig. 6-Fig. 9 is obtained
Shown, wherein, the logarithm value of deep induction value is X, and resistivity anisotropy coefficient value is Y.
Table 5
Table 6
| Horizontal resistivity/Ω .m | Second fitting Series of Equations (80 ° of hole angle) |
| 100 | Y=8.7957x2-34.333x+34.514 |
| 50 | Y=8.6565x2-28.542x+24.537 |
| 20 | Y=8.3824x2-20.899x+14.033 |
| 10 | Y=8.084x2-15.217x+8.1632 |
| 5 | Y=7.6628x2-9.7129x+4.0744 |
| 2 | Y=6.5601x2-2.7017x+1.2447 |
Table 7
| Horizontal resistivity/Ω .m | Second fitting Series of Equations (85 ° of hole angle) |
| 100 | Y=6.1294x2-23.103x+22.708 |
| 50 | Y=6.0125x2-18.995x+15.936 |
| 20 | Y=5.7817x2-13.572x+8.8907 |
| 10 | Y=5.5303x2-9.5514x+5.0395 |
| 5 | Y=5.1772x2-5.6795x+2.4572 |
| 2 | Y=4.3421x2-0.8814x+0.887 |
Table 8
S107：Based on the dual induction log data of formation at target locations, hole angle curve data and the second fitting Serial Prescription
Journey obtains resistivity anisotropy coefficient of the formation at target locations under the conditions of actual hole angle.
The dual induction log data obtained in step S101 and hole angle curve data are substituted into into the second fitting Serial Prescription
Journey, can be calculated resistivity anisotropy coefficient of the formation at target locations under the conditions of actual hole angle.Specifically, calculating is felt deeply
Under the conditions of the logarithm value that should be worth and the stratum identical, resistivity anisotropy system of the formation at target locations under the conditions of actual hole angle
Number.
When actual hole angle be the multiple of 5 ° of step-length and data point on certain curve when, directly according to right in table 5～8
The the second fitting Series of Equations answered solves resistivity anisotropy coefficient of the formation at target locations under the conditions of the actual hole angle.
When actual hole angle be not 5 ° of multiple and data point not on certain curve when, then should using interpolation calculation
Resistivity anisotropy coefficient of the formation at target locations under the conditions of the actual hole angle.For example, deep induction logarithm value during 83 ° of hole angle
For 1.7, corresponding resistivity anisotropy coefficient when first calculating 80 ° of hole angle：By x=1.7, Rh=18.112 Ω .m and Fig. 7
Understand that the point is, between two curves of 10 Ω .m and 20 Ω .m, by table 6 the 4th and the 3rd fit equation, to divide between horizontal resistivity
Do not take after y1=0.0, y2=1.0, y3=2.0 are substituted into and obtain under 10 Ω .m：X110, x210, x310, under 20 Ω .m：x120’、
X220, x320, according to x110, x120, x210, x220, x310, x320, can be obtained under 18.112 Ω .m by linear interpolation method：
X118, x218, x318, can be solved by lower three points (x118, y1) of above-mentioned 18.112 Ω .m, (x218, y2), (x318, y3)
Go out y=ax2A, b, c in+bx+c, it is known that the x=1.7 under 80 ° of hole angles, you can obtain the resistivity anisotropy system of the point
Number y80.
It is same by corresponding resistivity anisotropy coefficient during 85 ° of hole angle：By x=1.7, Rh=18.112 Ω .m and figure
8 understand the point between horizontal resistivity be two curves of 10 Ω .m and 20 Ω .m between, by table 7 the 4th and the 3rd fit equation,
Taken after y1=0.0, y2=1.0, y3=2.0 are substituted into respectively and obtained under 10 Ω .m：X110, x210, x310, under 20 Ω .m：x120、
X220, x320, according to x110, x120, x210, x220, x310, x320, can be obtained under 18.112 Ω .m by linear interpolation method：
X118, x218, x318, can be solved by lower three points (x118, y1) of above-mentioned 18.112 Ω .m, (x218, y2), (x318, y3)
Go out y=ax2A, b, c in+bx+c, it is known that the x=1.7 under 85 ° of hole angles, you can obtain the resistivity anisotropy system of the point
Number y85.Last corresponding resistivity anisotropy coefficient when calculating 83 ° of hole angle by linear interpolation method.
S108：Horizontal resistivity and formation at target locations based on the formation at target locations under the conditions of actual hole angle is in real well
Resistivity anisotropy coefficient under the conditions of oblique angle obtains vertical resistivity of the formation at target locations under the conditions of actual hole angle.Target
Horizontal resistivity of the stratum in the vertical resistivity=formation at target locations under the conditions of actual hole angle under the conditions of actual hole angle ×
(resistivity anisotropy coefficient of the formation at target locations under the conditions of actual hole angle)2。
The method for obtaining horizontal well anisotropically layer resistivity in the embodiment of the present invention has the advantages that：It is logical
Under the conditions of crossing Method for Numerical foundation experiment stratum difference hole angle, difference, deep induction pair in preset level resistivity, depth, is sensed
The relation of numerical value and resistivity anisotropy coefficient, then through fitting and calculate the resistivity anisotropy system for obtaining formation at target locations
Number.The Anisotropic Resistivities of Bi obtained by this kind of method can be analysis stratum condition containing pureed and the horizontal resistivity on calculating stratum
Or vertical resistivity provides more accurately data support, so that analysis and result of calculation are more nearly the situation of actual formation,
And then contribute to the accuracy of evaluating reservoir.
A kind of device for obtaining horizontal well anisotropically layer resistivity is also proposed in following embodiments herein,
Figure 10 is the structural representation for obtaining the horizontal well anisotropically device of layer resistivity in the embodiment of the present invention, such as Figure 10 institutes
Show, the device for obtaining horizontal well anisotropically layer resistivity includes：
Data acquisition module, which is used for obtaining the dual induction log data of formation at target locations, hole angle curve data and target
The horizontal resistivity on stratum；
Computing module, which is used for according to the horizontal resistivity preset resistance rate anisotropy system different with formation at target locations
Vertical resistivity under several obtains preset resistance rate anisotropy coefficient of the formation at target locations under different default hole angles, different
Under dual induction log response value；
First fitting module, which is used for the preset resistance rate according to formation at target locations under different default hole angles, different
Dual induction log response value under the conditions of anisotropy coefficient sets up the first coordinate system, by different preset level resistivity from
Scatterplot is fitted in inserting first coordinate system and obtains the first fitting Series of Equations；
Horizontal resistivity acquisition module, which is used for the dual induction log number according to the first fitting Series of Equations, formation at target locations
Horizontal resistivity of the formation at target locations under the conditions of actual hole angle is obtained according to hole angle curve data；
Second fitting module, which is used for the preset resistance rate according to formation at target locations under different default hole angles, different
The deep induction value in dual induction log response value and resistivity anisotropy coefficient under anisotropy coefficient sets up the second coordinate
System, obtains the second fitting series by being fitted in discrete point insertion second coordinate system of different preset level resistivity
Equation；
Resistivity anisotropy coefficient acquisition module, which is used for the dual induction log data according to formation at target locations, hole angle
Curve data and the second fitting Series of Equations obtain resistivity anisotropy of the formation at target locations under the conditions of actual hole angle
Coefficient；
Vertical resistivity acquisition module, which is used for the level resistance according to the formation at target locations under the conditions of actual hole angle
The resistivity anisotropy coefficient of rate and formation at target locations under the conditions of actual hole angle obtains formation at target locations in actual hole angle bar
Vertical resistivity under part.
In the nineties in 20th century, for the improvement of a technology clearly can distinguish be improvement on hardware (for example,
Improvement to circuit structures such as diode, transistor, switches) or software on improvement (for the improvement of method flow).So
And, with the development of technology, the improvement of current many method flows can be considered as directly improving for hardware circuit.
Designer obtains corresponding hardware circuit nearly all by improved method flow is programmed in hardware circuit.Cause
This, it cannot be said that the improvement of a method flow cannot be realized with hardware entities module.For example, PLD
(Programmable Logic Device, PLD) (such as field programmable gate array (Field Programmable Gate
Array, FPGA)) it is exactly such a integrated circuit, its logic function is determined to device programming by user.By designer
Voluntarily programming comes a digital display circuit " integrated " on a piece of PLD, designs and makes without asking chip maker
Special IC chip.And, nowadays, replacement manually makes IC chip, and this programming is also used instead mostly and " patrolled
Realizing, when it is write with program development, software compiler used is similar for volume compiler (logic compiler) " software,
And the source code before will compiling also handy specific programming language writing, this is referred to as hardware description language
(Hardware Description Language, HDL), and HDL is also not only a kind of, but have many kinds, such as ABEL
(Advanced Boolean Expression Language)、AHDL(Altera Hardware Description
Language)、Confluence、CUPL(Cornell University Programming Language)、HDCal、JHDL
(Java Hardware Description Language)、Lava、Lola、MyHDL、PALASM、RHDL(Ruby
Hardware Description Language) etc., that what is most commonly used at present is VHDL (Very-High-Speed
Integrated Circuit Hardware Description Language) and Verilog.Those skilled in the art also should
This understands, it is only necessary to slightly programming in logic be programmed in integrated circuit method flow with above-mentioned several hardware description languages,
The hardware circuit for realizing the logical method flow process can be just readily available.
Controller can be implemented in any suitable manner, and for example, controller can take such as microprocessor or process
Device and storage can by the computer of the computer readable program code (such as software or firmware) of (micro-) computing device
Read medium, gate, switch, special IC (Application Specific Integrated Circuit,
ASIC), the form of programmable logic controller (PLC) and embedded microcontroller, the example of controller include but is not limited to following microcontroller
Device：ARC 625D, Atmel AT91SAM, Microchip PIC18F26K20 and Silicone Labs C8051F320, deposit
Memory controller is also implemented as a part for the control logic of memorizer.
It is also known in the art that in addition to realizing controller in pure computer readable program code mode, it is complete
Entirely can by by method and step carry out programming in logic cause controller with gate, switch, special IC, may be programmed
The form of logic controller and embedded microcontroller etc. is realizing identical function.Therefore this controller is considered one kind
Hardware component, and the device for realizing various functions to including in which can also be considered as the structure in hardware component.Or
Even, can be considered as the device of realizing various functions can not only be the software module of implementation method but also can be Hardware Subdivision
Structure in part.
System, device, module or unit that above-described embodiment is illustrated, specifically can be realized by computer chip or entity,
Or by the product with certain function realizing.
For convenience of description, it is divided into various units with function when describing apparatus above to describe respectively.Certainly, implementing this
The function of each unit can be realized in same or multiple softwares and/or hardware during application.
As seen through the above description of the embodiments, those skilled in the art can be understood that the application can
By software plus required general hardware platform mode realizing.Based on such understanding, the technical scheme essence of the application
On part that in other words prior art is contributed can be embodied in the form of software product, typical configure at one
In, computing device includes one or more processors (CPU), input/output interface, network interface and internal memory.The computer is soft
Part product can include that some instructions are used so that a computer equipment (can be personal computer, server, or network
Equipment etc.) perform method described in some parts of each embodiment of the application or embodiment.The computer software product can
To be stored in internal memory, internal memory potentially includes the volatile memory in computer-readable medium, random access memory
And/or the form, such as read only memory (ROM) or flash memory (flash RAM) such as Nonvolatile memory (RAM).Internal memory is computer
The example of computer-readable recording medium.Computer-readable medium includes that permanent and non-permanent, removable and non-removable media can be by
Any method or technique is realizing information Store.Information can be computer-readable instruction, data structure, the module of program or its
His data.The example of the storage medium of computer includes, but are not limited to phase transition internal memory (PRAM), static RAM
(SRAM), dynamic random access memory (DRAM), other kinds of random access memory (RAM), read only memory
(ROM), Electrically Erasable Read Only Memory (EEPROM), fast flash memory bank or other memory techniques, read-only optical disc are read-only
Memorizer (CD-ROM), digital versatile disc (DVD) or other optical storages, magnetic cassette tape, tape magnetic rigid disk storage or
Other magnetic storage apparatus or any other non-transmission medium, can be used to store the information that can be accessed by a computing device.According to
Herein defines, and computer-readable medium does not include of short duration computer readable media (transitory media), such as modulation
Data signal and carrier wave.
Each embodiment in this specification is described by the way of progressive, identical similar portion between each embodiment
Divide mutually referring to what each embodiment was stressed is the difference with other embodiment.Especially for system reality
For applying example, as which is substantially similar to embodiment of the method, so description is fairly simple, related part is referring to embodiment of the method
Part explanation.
The application can be used in numerous general or special purpose computing system environments or configuration.For example：Personal computer, clothes
Business device computer, handheld device or portable set, laptop device, multicomputer system, based on the system of microprocessor, put
Top box, programmable consumer-elcetronics devices, network PC, minicomputer, mainframe computer, including any of the above system or equipment
Distributed computing environment etc..
The application can be described in the general context of computer executable instructions, such as program
Module.Usually, program module includes execution particular task or realizes the routine of particular abstract data type, program, object, group
Part, data structure etc..The application is put into practice in a distributed computing environment can also, in these distributed computing environment, by
The remote processing devices connected by communication network are performing task.In a distributed computing environment, program module can be with
In local and remote computer-readable storage medium including including storage device.
Although depicting the application by embodiment, it will be appreciated by the skilled addressee that the application have it is many deformation and
Change is without deviating from spirit herein, it is desirable to which appended claim includes these deformations and changes without deviating from the application's
Spirit.
Claims (12)
1. a kind of method for obtaining horizontal well anisotropically layer resistivity, it is characterised in which comprises the following steps：
Obtain the horizontal resistivity of the dual induction log data, hole angle curve data and formation at target locations of formation at target locations；
The different default electricity of formation at target locations is obtained based on the horizontal resistivity and different preset resistance rate anisotropy coefficients
Vertical resistivity under resistance rate anisotropy coefficient；
Obtained based on the vertical resistivity under the horizontal resistivity preset resistance rate anisotropy coefficient different with formation at target locations
Dual induction log response under preset resistance rate anisotropy coefficient of the formation at target locations under different default hole angles, different
Value；
Based on the double senses under the conditions of preset resistance rate anisotropy coefficient of the formation at target locations under different default hole angles, different
Answer log response value to set up the first coordinate system, the discrete point of different preset level resistivity is inserted in first coordinate system
It is fitted and obtains the first fitting Series of Equations；
The target is obtained according to the first fitting Series of Equations, the dual induction log data of formation at target locations and hole angle curve data
Horizontal resistivity of the stratum under the conditions of actual hole angle；
Double sensings under based on preset resistance rate anisotropy coefficient of the formation at target locations under different default hole angles, different are surveyed
Deep induction value and resistivity anisotropy coefficient in well response value sets up the second coordinate system, by different preset level resistivity
Discrete point insert second coordinate system in be fitted and obtain the second fitting Series of Equations；
Target is obtained based on the dual induction log data of formation at target locations, hole angle curve data and the second fitting Series of Equations
Resistivity anisotropy coefficient of the stratum under the conditions of actual hole angle；
Horizontal resistivity and formation at target locations based on the formation at target locations under the conditions of actual hole angle is in actual hole angle condition
Under resistivity anisotropy coefficient obtain vertical resistivity of the formation at target locations under the conditions of actual hole angle.
2. the method for obtaining horizontal well anisotropically layer resistivity according to claim 1, it is characterised in that double sensings
Log response value includes deep induction value and middle influence value, senses difference=deep induction value-middle influence value in depth.
3. the method for obtaining horizontal well anisotropically layer resistivity according to claim 2, it is characterised in that described
Double sensings under the conditions of based on preset resistance rate anisotropy coefficient of the formation at target locations under different default hole angles, different are surveyed
In the step of well response value sets up the first coordinate system, abscissa of the difference as rectangular coordinate system is sensed with depth, with deep induction value
Logarithm value set up the first coordinate system as the vertical coordinate of the rectangular coordinate system.
4. the method for obtaining horizontal well anisotropically layer resistivity according to claim 1, it is characterised in that different
Default hole angle is incremented by value by the first default step-length in the range of 75 ° to 90 °.
5. the method for obtaining horizontal well anisotropically layer resistivity according to claim 4, it is characterised in that first is pre-
If step-length is 5 degree.
6. the method for obtaining horizontal well anisotropically layer resistivity according to claim 5, it is characterised in that when default
When hole angle rises to 90 degree, it is assumed that default hole angle is 89 degree and replaces 90 degree.
7. the method for obtaining horizontal well anisotropically layer resistivity according to claim 1, it is characterised in that different
Preset resistance rate anisotropy coefficient is incremented by value by the second default step-length in the range of 1.0 to 4.0.
8. the method for obtaining horizontal well anisotropically layer resistivity according to claim 1, it is characterised in that second is pre-
If step-length is 0.5.
9. the method for obtaining horizontal well anisotropically layer resistivity according to claim 1, it is characterised in that different
Preset level resistivity is respectively 2 Ω m, 5 Ω m, 10 Ω m, 20 Ω m, 50 Ω m and 100 Ω .m.
10. the method for obtaining horizontal well anisotropically layer resistivity according to claim 1, it is characterised in that in institute
State and target ground is obtained based on the dual induction log data of formation at target locations, hole angle curve data and the second fitting Series of Equations
During layer is the step of the resistivity anisotropy coefficient under the conditions of actual hole angle, when actual hole angle is not in the second fitting series
When on equation, resistivity anisotropy coefficient of the formation at target locations under the actual hole angle is obtained using interpolation method.
11. methods for obtaining horizontal wells anisotropically layer resistivity according to claim 1, it is characterised in that in institute
State and the target ground is obtained according to the first fitting Series of Equations, the dual induction log data of formation at target locations and hole angle curve data
During layer is the step of the horizontal resistivity under the conditions of actual hole angle, when actual hole angle is not on the first fitting Series of Equations
When, horizontal resistivity of the formation at target locations under the actual hole angle is obtained using interpolation method.
12. a kind of devices for obtaining horizontal wells anisotropically layer resistivity, it is characterised in that include：
Data acquisition module, which is used for obtaining the dual induction log data of formation at target locations, hole angle curve data and formation at target locations
Horizontal resistivity；
Computing module, which is used for according under the horizontal resistivity preset resistance rate anisotropy coefficient different with formation at target locations
Vertical resistivity obtain under preset resistance rate anisotropy coefficient of the formation at target locations under different default hole angles, different
Dual induction log response value；
First fitting module, its be used for the preset resistance rate according to formation at target locations under different default hole angles, different respectively to
Dual induction log response value under different in nature coefficient condition sets up the first coordinate system, by the discrete point of different preset level resistivity
It is fitted in inserting first coordinate system and obtains the first fitting Series of Equations；
Horizontal resistivity acquisition module, its be used for according to first fitting Series of Equations, the dual induction log data of formation at target locations and
Hole angle curve data obtains horizontal resistivity of the formation at target locations under the conditions of actual hole angle；
Second fitting module, its be used for the preset resistance rate according to formation at target locations under different default hole angles, different respectively to
The deep induction value in dual induction log response value and resistivity anisotropy coefficient under different in nature coefficient sets up the second coordinate system, will
The discrete point of different preset level resistivity is fitted in inserting second coordinate system and obtains the second fitting Series of Equations；
Resistivity anisotropy coefficient acquisition module, which is used for the dual induction log data according to formation at target locations, hole deviation angular curve
Data and the second fitting Series of Equations obtain resistivity anisotropy coefficient of the formation at target locations under the conditions of actual hole angle；
Vertical resistivity acquisition module, its be used for the horizontal resistivity according to the formation at target locations under the conditions of actual hole angle and
Formation at target locations obtains formation at target locations under the conditions of actual hole angle in the resistivity anisotropy coefficient under the conditions of actual hole angle
Vertical resistivity.
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