CN105507891A - Method and device for acquiring anisotropy coefficients of specific resistance of strata of high-inclination wells - Google Patents
Method and device for acquiring anisotropy coefficients of specific resistance of strata of high-inclination wells Download PDFInfo
- Publication number
- CN105507891A CN105507891A CN201510855856.1A CN201510855856A CN105507891A CN 105507891 A CN105507891 A CN 105507891A CN 201510855856 A CN201510855856 A CN 201510855856A CN 105507891 A CN105507891 A CN 105507891A
- Authority
- CN
- China
- Prior art keywords
- resistivity
- formation
- anisotropy coefficient
- side direction
- angle
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims abstract description 36
- 230000015572 biosynthetic process Effects 0.000 claims description 102
- 238000010606 normalization Methods 0.000 claims description 44
- 230000009977 dual effect Effects 0.000 claims description 42
- 238000004364 calculation method Methods 0.000 claims description 27
- 230000004044 response Effects 0.000 claims description 26
- 238000013481 data capture Methods 0.000 claims description 4
- 238000004088 simulation Methods 0.000 abstract 1
- 238000002474 experimental method Methods 0.000 description 5
- 238000004458 analytical method Methods 0.000 description 4
- 230000009286 beneficial effect Effects 0.000 description 4
- 230000002146 bilateral effect Effects 0.000 description 2
- 238000013459 approach Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005553 drilling Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
Classifications
-
- E—FIXED CONSTRUCTIONS
- E21—EARTH OR ROCK DRILLING; MINING
- E21B—EARTH OR ROCK DRILLING; OBTAINING OIL, GAS, WATER, SOLUBLE OR MELTABLE MATERIALS OR A SLURRY OF MINERALS FROM WELLS
- E21B49/00—Testing the nature of borehole walls; Formation testing; Methods or apparatus for obtaining samples of soil or well fluids, specially adapted to earth drilling or wells
Landscapes
- Life Sciences & Earth Sciences (AREA)
- Engineering & Computer Science (AREA)
- Geology (AREA)
- Mining & Mineral Resources (AREA)
- Physics & Mathematics (AREA)
- Environmental & Geological Engineering (AREA)
- Fluid Mechanics (AREA)
- General Life Sciences & Earth Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Measurement Of Resistance Or Impedance (AREA)
Abstract
The invention provides a method and a device for acquiring anisotropy coefficients of specific resistance of strata of high-inclination wells. The method includes acquiring dual-lateral well logging data and well inclination angle curve data of the target strata; substituting the well inclination angle curve data and the dual-lateral well logging data of the target strata into preset fitting equations and computing the anisotropy coefficients of the specific resistance of the target strata at different well inclination angles and different depth points. The method and the device for acquiring the anisotropy coefficients of the specific resistance of the strata of the high-inclination wells in an embodiment of the invention have the advantages that dual-lateral well logging responds to relations between normalized golden-section difference values and the anisotropy coefficients of the specific resistance under the condition that the different well inclination angels are established for the experimental strata by the aid of numerical simulation processes, and the anisotropy coefficients of the specific resistance of the target strata can be acquired by means of fitting and computing; data support can be provided for computing horizontal specific resistance of the strata by the aid of the anisotropy coefficients of the specific resistance in follow-up procedures, and accordingly computation results are similar to the specific resistance of the strata under actual conditions.
Description
Technical field
The invention relates to oil exploration data processing technique, particularly, is about a kind of method and the device that obtain high angle hole formation resistivity anisotropy coefficient
Background technology
Formation resistivity is one of important parameter of evaluating reservoir, formation resistivity is closely connected with the oil exploration parameters such as current potential, drilling time, oil and gas reserves and oil saturation of logging well, and in high angle hole and horizontal well, often make measuring resistance rate distortion because stratum exists resistivity anisotropy phenomenon.Calculating resistivity anisotropy coefficient is one of approach obtaining resistivity anisotropy stratum vertical resistivity and horizontal resistivity, therefore, obtains the important process step that formation resistivity anisotropy coefficient is oil exploration.In prior art, experimentally room measurement obtains described formation resistivity anisotropy coefficient usually, but directly cannot obtain continuous print formation resistivity anisotropy coefficient according to actual measured value.
Realizing in the application's process, inventor finds that in prior art, at least there are the following problems: in a lot of stratum, especially in high angle hole and horizontal well, there is resistivity anisotropy phenomenon.At this moment bilateral is the integrated value of horizontal resistivity and vertical resistivity to the resistivity recorded.And anisotropy is most produces owing to being mingled with other stratum with different resistivity in stratum, it is layer by layer deposition that stratum is formed, therefore the resistivity of horizontal direction can reflect the truth on stratum.So, the resistivity calculated required for described formation resistivity is generally horizontal resistivity, therefore depart from layer resistivity truly with cable bilateral to the resistivity recorded, and then the parameter value error such as the oil saturation calculated according to described formation resistivity is also relatively large.
Summary of the invention
The main purpose of the embodiment of the present invention is to provide a kind of method and the device that obtain high angle hole formation resistivity anisotropy coefficient, to make the actual conditions of gained resistivity anisotropy coefficient more closely layer.
To achieve these goals, the embodiment of the present invention provides a kind of method obtaining high angle hole formation resistivity anisotropy coefficient, and the method comprises: the dual laterolog data and the hole angle curve data that obtain formation at target locations; The hole angle curve data of described formation at target locations and dual laterolog data are substituted into the fit equation preset, calculates the resistivity anisotropy coefficient of described formation at target locations at different hole angle, different depth point.
In one embodiment, determine described fit equation by following steps: the horizontal resistivity obtaining described formation at target locations, calculate the vertical resistivity of described formation at target locations according to different preset resistance rate anisotropy coefficients; Calculate the dual laterolog response value under different default hole angles according to described horizontal resistivity and vertical resistivity, described dual laterolog response value comprises: dark side direction value and shallow side direction value; The depth side direction normalization golden section difference of described formation at target locations under described different default hole angle is calculated according to described dual laterolog response value; Set up the coordinate system of described depth side direction normalization golden section difference and described preset resistance rate anisotropy coefficient, and in described coordinate system, insert the discrete point of described different default hole angle; Described discrete point is fitted to curve, and according to described curve acquisition fit equation.
In one embodiment, above-mentioned by the depth side direction normalization golden section difference described in following formulae discovery: depth side direction normalization golden section difference=dark side direction value-0.618 × shallow side direction value)/dark side direction value.
In one embodiment, above-mentioned different default hole angle increases progressively value by 15 ° of step-lengths in the scope of 0 to 90 °; Described different preset resistance rate anisotropy coefficient increases progressively value by 0.5 step-length in the scope of 1.0 to 4.0.
In one embodiment, above-mentioned calculates the resistivity anisotropy coefficient of described formation at target locations at different hole angle, different depth point by described default fit equation, comprise: when real well oblique angle is the integral multiple of step-length 15 °, the fit equation corresponding according to the number of degrees at described real well oblique angle calculate described formation at target locations at described real well oblique angle, the resistivity anisotropy coefficient of different depth point; When real well oblique angle is not the integral multiple of step-length 15 °, adopt the coefficient in the actual fit equation described in interpolation calculation corresponding to real well oblique angle, determine the actual fit equation corresponding to described real well oblique angle, and according to described actual fit equation calculate described formation at target locations at described real well oblique angle, the resistivity anisotropy coefficient of different depth point.
The embodiment of the present invention also provides a kind of device obtaining high angle hole formation resistivity anisotropy coefficient, and this device comprises: data capture unit, for obtaining dual laterolog data and the hole angle curve data of formation at target locations; Resistivity anisotropy coefficient calculation unit, for the hole angle curve data of described formation at target locations and dual laterolog data are substituted into the fit equation preset, calculates the resistivity anisotropy coefficient of described formation at target locations at different hole angle, different depth point.
In one embodiment, above-mentioned resistivity anisotropy coefficient calculation unit determines described fit equation by following steps: the horizontal resistivity obtaining described formation at target locations, calculates the vertical resistivity of described formation at target locations according to different preset resistance rate anisotropy coefficients; Calculate the dual laterolog response value under different default hole angles according to described horizontal resistivity and vertical resistivity, described dual laterolog response value comprises: dark side direction value and shallow side direction value; The depth side direction normalization golden section difference of described formation at target locations under described different default hole angle is calculated according to described dual laterolog response value; Set up the coordinate system of described depth side direction normalization golden section difference and described preset resistance rate anisotropy coefficient, and in described coordinate system, insert the discrete point of described different default hole angle; Described discrete point is fitted to curve, and according to described curve acquisition fit equation.
In one embodiment, above-mentioned resistivity anisotropy coefficient calculation unit is by the depth side direction normalization golden section difference described in following formulae discovery: depth side direction normalization golden section difference=dark side direction value-0.618 × shallow side direction value)/dark side direction value.
In one embodiment, above-mentioned different default hole angle increases progressively value by 15 ° of step-lengths in the scope of 0 to 90 °; Described different preset resistance rate anisotropy coefficient increases progressively value by 0.5 step-length in the scope of 1.0 to 4.0.
In one embodiment, when real well oblique angle is the integral multiple of step-length 15 °, the described resistivity anisotropy coefficient calculation unit fit equation corresponding according to the number of degrees at described real well oblique angle calculate described formation at target locations at described real well oblique angle, the resistivity anisotropy coefficient of different depth point; When real well oblique angle is not the integral multiple of step-length 15 °, described resistivity anisotropy coefficient calculation unit adopts the coefficient in the actual fit equation described in interpolation calculation corresponding to real well oblique angle, determine the actual fit equation corresponding to described real well oblique angle, and according to described actual fit equation calculate described formation at target locations at described real well oblique angle, the resistivity anisotropy coefficient of different depth point.
The beneficial effect of the embodiment of the present invention is, under setting up the different hole angle condition in experiment stratum by Method for Numerical, the relation of dual laterolog response normalization golden section difference and resistivity anisotropy coefficient, then through over-fitting and the resistivity anisotropy coefficient calculating acquisition formation at target locations.There is provided Data support for follow-up by resistivity anisotropy coefficient calculations stratum horizontal resistivity, make result of calculation more close to the resistivity of the actual conditions on stratum.
Accompanying drawing explanation
In order to be illustrated more clearly in the embodiment of the present invention or technical scheme of the prior art, below the accompanying drawing used required in describing embodiment is briefly described, apparently, accompanying drawing in the following describes is only some embodiments of the present invention, for those of ordinary skill in the art, under the prerequisite not paying creative work, other accompanying drawing can also be obtained according to these accompanying drawings.
Fig. 1 is the flow chart of the method for acquisition high angle hole formation resistivity anisotropy coefficient according to the embodiment of the present invention;
Fig. 2 is the flow chart setting up fit equation according to the embodiment of the present invention;
Fig. 3 is under different hole angle condition, the coordinate schematic diagram of resistivity anisotropy coefficient and dual laterolog response normalization golden section difference;
Fig. 4 is the structural representation of the device of acquisition high angle hole formation resistivity anisotropy coefficient according to the embodiment of the present invention.
Detailed description of the invention
Below in conjunction with the accompanying drawing in the embodiment of the present invention, be clearly and completely described the technical scheme in the embodiment of the present invention, obviously, described embodiment is only the present invention's part embodiment, instead of whole embodiments.Based on the embodiment in the present invention, those of ordinary skill in the art, not making the every other embodiment obtained under creative work prerequisite, belong to the scope of protection of the invention.
The embodiment of the present invention provides a kind of method and the device that obtain high angle hole formation resistivity anisotropy coefficient.Below in conjunction with accompanying drawing, the present invention is described in detail.
The embodiment of the present invention provides a kind of method obtaining high angle hole formation resistivity anisotropy coefficient, and as shown in Figure 1, the method for this acquisition high angle hole formation resistivity anisotropy coefficient mainly comprises the following steps:
Step S101: the dual laterolog data and the hole angle curve data that obtain formation at target locations;
Step S102: the hole angle curve data of formation at target locations and dual laterolog data are substituted into the fit equation preset, calculates the resistivity anisotropy coefficient of formation at target locations at different hole angle, different depth point.
By above-mentioned steps S101 and step S102, the method of the acquisition high angle hole formation resistivity anisotropy coefficient of the embodiment of the present invention, under setting up the different hole angle condition in experiment stratum by Method for Numerical, the relation of dual laterolog response normalization golden section difference and resistivity anisotropy coefficient, then through over-fitting and the resistivity anisotropy coefficient calculating acquisition formation at target locations.There is provided Data support for follow-up by resistivity anisotropy coefficient calculations stratum horizontal resistivity, make result of calculation more close to the resistivity of the actual conditions on stratum.
In embodiments of the present invention, be set up the fit equation preset described in above-mentioned steps S102 by each step as shown in Figure 2:
Step S201: the horizontal resistivity obtaining formation at target locations, calculates the vertical resistivity of formation at target locations according to different preset resistance rate anisotropy coefficients.
First a selected known formation at target locations, and obtain the horizontal resistivity (i.e. horizontal direction resistivity) of this formation at target locations.The vertical resistivity of this formation at target locations under different preset resistance rate anisotropy coefficients is calculated according to this horizontal resistivity.Wherein, preset resistance rate anisotropy coefficient refers to the square root of stratum vertical direction resistivity and horizontal direction resistivity ratio.In embodiments of the present invention, this preset resistance rate anisotropy coefficient (λ) is that step-length by 0.5 in the scope of 1.0 to 4.0 increases progressively value.
Step S202: calculate the dual laterolog response value under different default hole angles according to horizontal resistivity and vertical resistivity, dual laterolog response value comprises: dark side direction value (RLLD) and shallow side direction value (RLLS).
Particularly, according to the horizontal resistivity obtained in step S201, vertical resistivity, utilize dual laterolog equipment to measure and adopt finite element method (FEM) to calculate the dual laterolog response value of this formation at target locations under different default hole angles, different preset resistance rate anisotropy coefficient conditions, dual laterolog response value comprises: dark side direction value and shallow side direction value.Wherein, this different default hole angle refers to, in the scope of 0 to 90 °, increase progressively value by the step-length of 15 °.
Step S203: calculate the depth side direction normalization golden section difference of formation at target locations under different default hole angles according to dual laterolog response value.The formula calculating this depth side direction normalization golden section difference is specially: depth side direction normalization golden section difference=(dark side direction value-0.618 × shallow side direction value)/dark side direction value.
Step S204: the coordinate system setting up depth side direction normalization golden section difference and preset resistance rate anisotropy coefficient, and the discrete point inserting different default hole angles in a coordinate system.
Set up the coordinate system of above-mentioned depth side direction normalization golden section difference and preset resistance rate anisotropy coefficient.Particularly, with the abscissa that depth side direction normalization golden section difference is rectangular coordinate system, using preset resistance rate anisotropy coefficient as the ordinate of described rectangular coordinate system, and insert the discrete point of above-mentioned different default hole angle further in the coordinate system, thus the depth side direction normalization golden section difference in certain work area formed as shown in Figure 3 and the coordinate system of resistivity anisotropy coefficient.Wherein, the point on curve is the depth side direction normalization golden section difference under the difference according to step size computation presets hole angle, different preset resistance rate anisotropy coefficient condition.
Step S205: discrete point is fitted to curve, and according to curve acquisition fit equation.The slowness inserted in above-mentioned steps S204 difference discrete point is fitted to curve, and obtains the fit equation of this curve, be the fit equation preset described in above-mentioned steps S102, this fit equation can comprise quadratic equation with one unknown.
Further, further, the fit equation that each matched curve according to Fig. 3 obtains is as shown in table 1, and wherein, resistivity anisotropy coefficient is y, and depth side direction normalization golden section difference is x.
Table 1
| Hole angle | Fit equation |
| 0° | y＝5.4378x 2-26.066x+10.151 |
| 15° | y＝48.732x 2-58.637x+16.289 |
| 30° | y＝274.02x 2-227.64x+48.003 |
| 45° | y＝745.69x 2-589.71x+117.51 |
| 60° | y＝1695.7x 2-1343.5x+266.85 |
| 75° | y＝98423x 2-74200x+13984 |
| 85° | y＝-1638.1x 2+1415.5x-300.6 |
| 89° | y＝-1329.7x 2+1161.7x-248.66 |
After determining default fit equation by above-mentioned steps S201 to step S205, namely by step S102, the dual laterolog data obtained in step S101 and hole angle curve data are substituted into this fit equation, the resistivity anisotropy coefficient of this formation at target locations can be calculated.Particularly, under calculating the depth side direction normalization golden section difference condition identical with this stratum, the resistivity anisotropy coefficient of formation at target locations under different real well oblique angle conditions.
When real well oblique angle is the multiple of step-length 15 °, directly solve the resistivity anisotropy coefficient of this formation at target locations according to fit equation corresponding in table 1.
When real well oblique angle is not the multiple of 15 °, adopt the resistivity anisotropy coefficient of this formation at target locations of interpolation calculation.Such as, if hole angle 0 ° time the rectangular co-ordinate value fastened be (x
0, y
0), value during hole angle 15 ° on coordinate system is (x
0, y
1), then hole angle 13 ° of duration z
1for: z
1=y
0+ 13 (y
1-y
0)/15; The value that when separately getting hole angle 0 °, rectangular co-ordinate is fastened is (x
1, y
2), value when 15 ° on coordinate system is (x
1, y
3), then hole angle 13 ° of duration z
2for: z
2=y
2+ 13 (y
3-y
2)/15; Get x again
2=1., then z
3=0.382.
Y=ax can be solved by above-mentioned three points
2a, b, c in+bx+c, the depth side direction normalization golden section difference x under known this hole angle 13 °, can obtain the resistivity anisotropy coefficient of this point.
The method of the acquisition high angle hole formation resistivity anisotropy coefficient of the embodiment of the present invention has following beneficial effect: the acquisition resistivity anisotropy coefficient method of the embodiment of the present invention, under setting up the different hole angle condition in experiment stratum by Method for Numerical, the relation of depth side direction normalization golden section difference and resistivity anisotropy coefficient, then through over-fitting and the resistivity anisotropy coefficient calculating acquisition formation at target locations.By the resistivity anisotropy coefficient that this kind of method obtains, can be analysis stratum and provide Data support more accurately, to make analysis and calculation result more close to the situation of actual formation containing pureed condition and the horizontal resistivity or vertical resistivity calculating stratum.
The embodiment of the present invention also provides a kind of device obtaining high angle hole formation resistivity anisotropy coefficient, as shown in Figure 4, the device of this acquisition high angle hole formation resistivity anisotropy coefficient mainly comprises: data capture unit 1 and resistivity anisotropy coefficient calculation unit 2.
Wherein, above-mentioned data capture unit 1 is for obtaining dual laterolog data and the hole angle curve data of formation at target locations; Resistivity anisotropy coefficient calculation unit 2, for the hole angle curve data of formation at target locations and dual laterolog data are substituted into the fit equation preset, calculates the resistivity anisotropy coefficient of formation at target locations at different hole angle, different depth point.
The device of the acquisition high angle hole formation resistivity anisotropy coefficient of the embodiment of the present invention, under setting up the different hole angle condition in experiment stratum by Method for Numerical, the relation of dual laterolog response normalization golden section difference and resistivity anisotropy coefficient, then through over-fitting and the resistivity anisotropy coefficient calculating acquisition formation at target locations.There is provided Data support for follow-up by resistivity anisotropy coefficient calculations stratum horizontal resistivity, make result of calculation more close to the resistivity of the actual conditions on stratum.
In embodiments of the present invention, resistivity anisotropy coefficient calculation unit 2 sets up the above-mentioned fit equation preset by each step as shown in Figure 2:
Step S201: the horizontal resistivity obtaining formation at target locations, calculates the vertical resistivity of formation at target locations according to different preset resistance rate anisotropy coefficients.
First a selected known formation at target locations, and obtain the horizontal resistivity (i.e. horizontal direction resistivity) of this formation at target locations.The vertical resistivity of this formation at target locations under different preset resistance rate anisotropy coefficients is calculated according to this horizontal resistivity.Wherein, preset resistance rate anisotropy coefficient refers to the square root of stratum vertical direction resistivity and horizontal direction resistivity ratio.In embodiments of the present invention, this preset resistance rate anisotropy coefficient (λ) is that step-length by 0.5 in the scope of 1.0 to 4.0 increases progressively value.
Step S202: calculate the dual laterolog response value under different default hole angles according to horizontal resistivity and vertical resistivity, dual laterolog response value comprises: dark side direction value (RLLD) and shallow side direction value (RLLS).
Particularly, according to the horizontal resistivity obtained in step S201, vertical resistivity, utilize dual laterolog equipment to measure and adopt finite element method (FEM) to calculate the dual laterolog response value of this formation at target locations under different default hole angles, different preset resistance rate anisotropy coefficient conditions, dual laterolog response value comprises: dark side direction value and shallow side direction value.Wherein, this different default hole angle refers to, in the scope of 0 to 90 °, increase progressively value by the step-length of 15 °.
Step S203: calculate the depth side direction normalization golden section difference of formation at target locations under different default hole angles according to dual laterolog response value.The formula calculating this depth side direction normalization golden section difference is specially: depth side direction normalization golden section difference=(dark side direction value-0.618 × shallow side direction value)/dark side direction value.
Step S204: the coordinate system setting up depth side direction normalization golden section difference and preset resistance rate anisotropy coefficient, and the discrete point inserting different default hole angles in a coordinate system.
Set up the coordinate system of above-mentioned depth side direction normalization golden section difference and preset resistance rate anisotropy coefficient.Particularly, with the abscissa that depth side direction normalization golden section difference is rectangular coordinate system, using preset resistance rate anisotropy coefficient as the ordinate of described rectangular coordinate system, and insert the discrete point of above-mentioned different default hole angle further in the coordinate system, thus the depth side direction normalization golden section difference in certain work area formed as shown in Figure 3 and the coordinate system of resistivity anisotropy coefficient.Wherein, the point on curve is the depth side direction normalization golden section difference under the difference according to step size computation presets hole angle, different preset resistance rate anisotropy coefficient condition.
Step S205: discrete point is fitted to curve, and according to curve acquisition fit equation.The slowness inserted in above-mentioned steps S204 difference discrete point is fitted to curve, and obtains the fit equation of this curve, be the fit equation preset described in above-mentioned steps S102, this fit equation can comprise quadratic equation with one unknown.
Further, further, the fit equation that each matched curve according to Fig. 3 obtains is as shown in table 1, and wherein, resistivity anisotropy coefficient is y, and depth side direction normalization golden section difference is x.
Table 1
| Hole angle | Fit equation |
| 0° | y＝5.4378x 2-26.066x+10.151 |
| 15° | y＝48.732x 2-58.637x+16.289 |
| 30° | y＝274.02x 2-227.64x+48.003 |
| 45° | y＝745.69x 2-589.71x+117.51 |
| 60° | y＝1695.7x 2-1343.5x+266.85 |
| 75° | y＝98423x 2-74200x+13984 |
| 85° | y＝-1638.1x 2+1415.5x-300.6 |
| 89° | y＝-1329.7x 2+1161.7x-248.66 |
After determining default fit equation by above-mentioned steps S201 to step S205, namely by step S102, the dual laterolog data obtained in step S101 and hole angle curve data are substituted into this fit equation, the resistivity anisotropy coefficient of this formation at target locations can be calculated.Particularly, under calculating the depth side direction normalization golden section difference condition identical with this stratum, the resistivity anisotropy coefficient of formation at target locations under different real well oblique angle conditions.
When real well oblique angle is the multiple of step-length 15 °, directly solve the resistivity anisotropy coefficient of this formation at target locations according to fit equation corresponding in table 1.
When real well oblique angle is not the multiple of 15 °, adopt the resistivity anisotropy coefficient of this formation at target locations of interpolation calculation.Such as, if hole angle 0 ° time the rectangular co-ordinate value fastened be (x
0, y
0), value during hole angle 15 ° on coordinate system is (x
0, y
1), then hole angle 13 ° of duration z
1for: z
1=y
0+ 13 (y
1-y
0)/15; The value that when separately getting hole angle 0 °, rectangular co-ordinate is fastened is (x
1, y
2), value when 15 ° on coordinate system is (x
1, y
3), then hole angle 13 ° of duration z
2for: z
2=y
2+ 13 (y
3-y
2)/15; Get x again
2=1., then z
3=0.382.
Y=ax can be solved by above-mentioned three points
2a, b, c in+bx+c, the depth side direction normalization golden section difference x under known this hole angle 13 °, can obtain the resistivity anisotropy coefficient of this point.
The device of the acquisition high angle hole formation resistivity anisotropy coefficient of the embodiment of the present invention has following beneficial effect: the acquisition resistivity anisotropy coefficient unit of the embodiment of the present invention, under setting up the different hole angle condition in experiment stratum by Method for Numerical, the relation of depth side direction normalization golden section difference and resistivity anisotropy coefficient, then through over-fitting and the resistivity anisotropy coefficient calculating acquisition formation at target locations.By the resistivity anisotropy coefficient that this kind of device obtains, can be analysis stratum and provide Data support more accurately, to make analysis and calculation result more close to the situation of actual formation containing pureed condition and the horizontal resistivity or vertical resistivity calculating stratum.
One of ordinary skill in the art will appreciate that the hardware that all or part of step realized in above-described embodiment method can carry out instruction relevant by program has come, this program can be stored in a computer read/write memory medium, such as ROM/RAM, magnetic disc, CD etc.
Above-described specific embodiment; object of the present invention, technical scheme and beneficial effect are further described; be understood that; the foregoing is only specific embodiments of the invention; the protection domain be not intended to limit the present invention; within the spirit and principles in the present invention all, any amendment made, equivalent replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (10)
1. obtain a method for high angle hole formation resistivity anisotropy coefficient, it is characterized in that, described method comprises:
Obtain dual laterolog data and the hole angle curve data of formation at target locations;
The hole angle curve data of described formation at target locations and dual laterolog data are substituted into the fit equation preset, calculates the resistivity anisotropy coefficient of described formation at target locations at different hole angle, different depth point.
2. the method for acquisition high angle hole formation resistivity anisotropy coefficient according to claim 1, is characterized in that, determine described fit equation by following steps:
Obtain the horizontal resistivity of described formation at target locations, calculate the vertical resistivity of described formation at target locations according to different preset resistance rate anisotropy coefficients;
Calculate the dual laterolog response value under different default hole angles according to described horizontal resistivity and vertical resistivity, described dual laterolog response value comprises: dark side direction value and shallow side direction value;
The depth side direction normalization golden section difference of described formation at target locations under described different default hole angle is calculated according to described dual laterolog response value;
Set up the coordinate system of described depth side direction normalization golden section difference and described preset resistance rate anisotropy coefficient, and in described coordinate system, insert the discrete point of described different default hole angle;
Described discrete point is fitted to curve, and according to described curve acquisition fit equation.
3. the method for acquisition high angle hole formation resistivity anisotropy coefficient according to claim 2, is characterized in that, the depth side direction normalization golden section difference by described in following formulae discovery:
Depth side direction normalization golden section difference=dark side direction value-0.618 × shallow side direction value)/dark side direction value.
4. the method for acquisition high angle hole formation resistivity anisotropy coefficient according to claim 3, is characterized in that, described different default hole angle increases progressively value by 15 ° of step-lengths in the scope of 0 to 90 °; Described different preset resistance rate anisotropy coefficient increases progressively value by 0.5 step-length in the scope of 1.0 to 4.0.
5. the method for acquisition high angle hole formation resistivity anisotropy coefficient according to claim 4, it is characterized in that, calculate the resistivity anisotropy coefficient of described formation at target locations at different hole angle, different depth point by described default fit equation, comprising:
When real well oblique angle is the integral multiple of step-length 15 °, the fit equation corresponding according to the number of degrees at described real well oblique angle calculate described formation at target locations at described real well oblique angle, the resistivity anisotropy coefficient of different depth point;
When real well oblique angle is not the integral multiple of step-length 15 °, adopt the coefficient in the actual fit equation described in interpolation calculation corresponding to real well oblique angle, determine the actual fit equation corresponding to described real well oblique angle, and according to described actual fit equation calculate described formation at target locations at described real well oblique angle, the resistivity anisotropy coefficient of different depth point.
6. obtain a device for high angle hole formation resistivity anisotropy coefficient, it is characterized in that, described device comprises:
Data capture unit, for obtaining dual laterolog data and the hole angle curve data of formation at target locations;
Resistivity anisotropy coefficient calculation unit, for the hole angle curve data of described formation at target locations and dual laterolog data are substituted into the fit equation preset, calculates the resistivity anisotropy coefficient of described formation at target locations at different hole angle, different depth point.
7. the device of acquisition high angle hole formation resistivity anisotropy coefficient according to claim 6, it is characterized in that, described resistivity anisotropy coefficient calculation unit determines described fit equation by following steps:
Obtain the horizontal resistivity of described formation at target locations, calculate the vertical resistivity of described formation at target locations according to different preset resistance rate anisotropy coefficients;
Calculate the dual laterolog response value under different default hole angles according to described horizontal resistivity and vertical resistivity, described dual laterolog response value comprises: dark side direction value and shallow side direction value;
The depth side direction normalization golden section difference of described formation at target locations under described different default hole angle is calculated according to described dual laterolog response value;
Set up the coordinate system of described depth side direction normalization golden section difference and described preset resistance rate anisotropy coefficient, and in described coordinate system, insert the discrete point of described different default hole angle;
Described discrete point is fitted to curve, and according to described curve acquisition fit equation.
8. the device of acquisition high angle hole formation resistivity anisotropy coefficient according to claim 7, is characterized in that, described resistivity anisotropy coefficient calculation unit is by the depth side direction normalization golden section difference described in following formulae discovery:
Depth side direction normalization golden section difference=dark side direction value-0.618 × shallow side direction value)/dark side direction value.
9. the device of acquisition high angle hole formation resistivity anisotropy coefficient according to claim 8, is characterized in that, described different default hole angle increases progressively value by 15 ° of step-lengths in the scope of 0 to 90 °; Described different preset resistance rate anisotropy coefficient increases progressively value by 0.5 step-length in the scope of 1.0 to 4.0.
10. the device of acquisition high angle hole formation resistivity anisotropy coefficient according to claim 9, is characterized in that,
When real well oblique angle is the integral multiple of step-length 15 °, the described resistivity anisotropy coefficient calculation unit fit equation corresponding according to the number of degrees at described real well oblique angle calculate described formation at target locations at described real well oblique angle, the resistivity anisotropy coefficient of different depth point;
When real well oblique angle is not the integral multiple of step-length 15 °, described resistivity anisotropy coefficient calculation unit adopts the coefficient in the actual fit equation described in interpolation calculation corresponding to real well oblique angle, determine the actual fit equation corresponding to described real well oblique angle, and according to described actual fit equation calculate described formation at target locations at described real well oblique angle, the resistivity anisotropy coefficient of different depth point.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510855856.1A CN105507891B (en) | 2015-11-30 | 2015-11-30 | Obtain the method and device of high angle hole formation resistivity anisotropy coefficient |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510855856.1A CN105507891B (en) | 2015-11-30 | 2015-11-30 | Obtain the method and device of high angle hole formation resistivity anisotropy coefficient |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105507891A true CN105507891A (en) | 2016-04-20 |
| CN105507891B CN105507891B (en) | 2018-06-01 |
Family
ID=55716156
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510855856.1A Active CN105507891B (en) | 2015-11-30 | 2015-11-30 | Obtain the method and device of high angle hole formation resistivity anisotropy coefficient |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105507891B (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106522932A (en) * | 2016-09-28 | 2017-03-22 | 中国石油天然气股份有限公司 | Method and device for obtaining resistivity of anisotropic formation of horizontal well |
| CN107784159A (en) * | 2017-09-19 | 2018-03-09 | 中国石油天然气集团公司 | A kind of determination method of reservoir resistivity anisotropy coefficient |
| CN109236284A (en) * | 2018-09-06 | 2019-01-18 | 中国石油天然气集团有限公司 | A method of induction determines high steep true formation resistivity with lateral translocation |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102635347A (en) * | 2012-03-30 | 2012-08-15 | 中国电子科技集团公司第二十二研究所 | Method for quantitatively enabling thin interbed to be equivalent to formation with horizontal and vertical resistivities |
| CN103410504A (en) * | 2013-07-22 | 2013-11-27 | 中国石油天然气股份有限公司 | Method and device for determining true resistivity of horizontal well/highly-deviated well |
| CN104775811A (en) * | 2015-04-13 | 2015-07-15 | 中国海洋石油总公司 | Stratum anisotropy information extracting and correcting method and system |
-
2015
- 2015-11-30 CN CN201510855856.1A patent/CN105507891B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102635347A (en) * | 2012-03-30 | 2012-08-15 | 中国电子科技集团公司第二十二研究所 | Method for quantitatively enabling thin interbed to be equivalent to formation with horizontal and vertical resistivities |
| CN103410504A (en) * | 2013-07-22 | 2013-11-27 | 中国石油天然气股份有限公司 | Method and device for determining true resistivity of horizontal well/highly-deviated well |
| CN104775811A (en) * | 2015-04-13 | 2015-07-15 | 中国海洋石油总公司 | Stratum anisotropy information extracting and correcting method and system |
Non-Patent Citations (3)
| Title |
|---|
| 范宜仁等: "倾斜各向异性地层随钻电磁波测井响应模拟", 《测井技术》 * |
| 邓少贵: "大斜度井/水平井复杂介质双侧向测井响应数值模拟", 《测井技术》 * |
| 陈亮: "斜井、水平井双侧向测井响应三维有限元数值分析", 《中国优秀硕士学位论文全文数据库 基础科学辑》 * |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106522932A (en) * | 2016-09-28 | 2017-03-22 | 中国石油天然气股份有限公司 | Method and device for obtaining resistivity of anisotropic formation of horizontal well |
| CN106522932B (en) * | 2016-09-28 | 2019-07-09 | 中国石油天然气股份有限公司 | Obtain the method and device of horizontal well anisotropically layer resistivity |
| CN107784159A (en) * | 2017-09-19 | 2018-03-09 | 中国石油天然气集团公司 | A kind of determination method of reservoir resistivity anisotropy coefficient |
| CN107784159B (en) * | 2017-09-19 | 2021-09-28 | 中国石油天然气集团公司 | Method for determining anisotropic coefficient of reservoir resistivity |
| CN109236284A (en) * | 2018-09-06 | 2019-01-18 | 中国石油天然气集团有限公司 | A method of induction determines high steep true formation resistivity with lateral translocation |
Also Published As
| Publication number | Publication date |
|---|---|
| CN105507891B (en) | 2018-06-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US10385658B2 (en) | In-situ wellbore, core and cuttings information system | |
| BRPI0314264B1 (en) | method of processing diagrams to optimize resolution and system to characterize formations surrounding a wellbore | |
| CA2879859C (en) | Stratigraphic modeling using production data density profiles | |
| NO20180609A1 (en) | Methods and systems to analyze bed boundary detection | |
| US10782438B2 (en) | Formation dip determination using resistivity imaging tool | |
| US20200309985A1 (en) | Permeability Anisotropy Assessment In Subsurface Anisotropic Formations | |
| CN105507891A (en) | Method and device for acquiring anisotropy coefficients of specific resistance of strata of high-inclination wells | |
| AU2013399193B2 (en) | Static earth model grid cell scaling and property re-sampling methods and systems | |
| CN114429529B (en) | Three-dimensional geological model generation method and device, electronic equipment and storage medium | |
| US20160070019A1 (en) | Estimating subsurface formation and invasion properties | |
| GB2575418A (en) | System and methods for evaluating a formation using pixelated solutions of formation data | |
| US10488547B2 (en) | Estimating subsurface formation and invasion properties | |
| AU2014290779B2 (en) | System and method for estimating porosity distribution in subterranean reservoirs | |
| CN109901238B (en) | High-stress formation resistivity correction method based on stress difference resistivity experiment | |
| CN104975853A (en) | Method and device for obtaining stratum porosity | |
| CN109630089B (en) | Horizontal well geological structure recognition method and device | |
| JP2007285729A (en) | Method for measuring resistivity in stratum | |
| US10670768B2 (en) | Determining standoff between a wall of a wellbore and a tool disposed in the wellbore | |
| CN113552644B (en) | Density determination method and device and electronic equipment | |
| US9014984B2 (en) | Resolution matched nonlinear resolution enhancement of well logs | |
| CN114185108B (en) | Crack porosity determination method, storage medium, and computer device | |
| CN105863614A (en) | Three-dimensional induction well logging data real-time processing method | |
| CN113704946B (en) | Method, device, electronic equipment and medium for identifying reservoir boundary of double-layer commingled production well | |
| CN112711076B (en) | Method and apparatus for extracting depth of penetration of mud into formation in petroleum drilling | |
| CN110824565B (en) | Construction method and system of space-variant wavelet body |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |