CN106518644B - 9,10-二苯羰基蒽类衍生物及使用该衍生物的有机发光器件 - Google Patents

9,10-二苯羰基蒽类衍生物及使用该衍生物的有机发光器件 Download PDF

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CN106518644B
CN106518644B CN201610954532.8A CN201610954532A CN106518644B CN 106518644 B CN106518644 B CN 106518644B CN 201610954532 A CN201610954532 A CN 201610954532A CN 106518644 B CN106518644 B CN 106518644B
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phenylcarbamoyl
anthracene derivative
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boric acid
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CN106518644A (zh
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蔡辉
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Changchun Hyperions Technology Co Ltd
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Changchun Haipurunsi Technology Co Ltd
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Abstract

本发明提供一种9,10‑二苯羰基蒽类衍生物及使用该衍生物的有机发光器件，属于有机光电材料技术领域。该9,10‑二苯羰基蒽类衍生物具有式(Ⅰ)所示结构，本发明所述9,10‑二苯羰基蒽类衍生物以9,10‑二苯羰基蒽为母体，通过改变连接的基团，可进一步改善其物理特性，有效解决电子注入与传输问题，进而提高有机发光器件的发光特性。使用本发明提供的9,10‑二苯羰基蒽类衍生物制备的有机发光器件，具有较高的发光效率，并且驱动电压低，是一种优异的OLED材料。

Description

9,10-二苯羰基蒽类衍生物及使用该衍生物的有机发光器件
技术领域
本发明涉及有机光电材料技术领域，具体涉及一种9,10-二苯羰基蒽类衍生物及使用该衍生物的有机发光器件。
背景技术
有机电致发光作为一种全新的显示技术在各个性能上拥有现有显示技术无以伦比的优势，如具有全固态、自主发光、亮度高、高分辨率、视角宽(170度以上)、响应速度快、厚度薄、体积小、重量轻、可使用柔性基板、低电压直流驱动(3-10V)、功耗低、工作温度范围宽等，使得它的应用市场十分广泛，如照明系统、通讯系统、车载显示、便携式电子设备、高清晰度显示甚至是军事领域。
有机电致发光器件的发光属于注入型发光。在正向电压驱动下,阳极向发光层注入空穴，阴极向发光层注入电子。注入的空穴和电子在发光层中相遇结合成激子，激子复合并将能量传递给发光材料，后者经过辐射驰豫过程而发光。为了提高有机电致发光器件的稳定性和效率，应使电子和空穴的注入达到平衡。在有机电致发光器件中引入电子传输层(ETL)或/和空穴传输层(HTL)，形成多层结构器件，有助于电子和空穴注入的平衡，提高器件的性能。
但是，目前公开的发光材料在发光效率等性能方面仍不能够满足OLED的使用要求，因此，设计与寻找一种化合物，作为OLED新型材料以克服其在实际应用过程中出现的不足，是OLED材料研究工作中的重点与今后的研发趋势。
发明内容
本发明的目的在于提供一种9,10-二苯羰基蒽类衍生物及使用该衍生物的有机发光器件，本发明所述的9,10-二苯羰基蒽类衍生物作为发光材料应用于有机发光器件，使得到的器件不仅发光效率高，而且驱动电压低。
本发明提供了一种9,10-二苯羰基蒽类衍生物，具有如式(I)所述的结构式：
其中，Ar1-Ar4独立的选自氢、二苯砜基团、C1-C20的烷基、取代或未取代的C6-C30的芳基、取代或未取代的C4-C50的杂芳基、或取代或未取代的C6-C50的芳香胺基；
Ar5-Ar14独立的选自氢、C1-C20烷基、C3-C20的烯烷基或C3-C20的炔烷基。
优选的，Ar1-Ar4独立的选自氢或以下结构中的任意一种：
优选的，Ar1与Ar4相同，Ar2与Ar3相同。
优选的，Ar2与Ar3为氢。
优选的，Ar5-Ar14独立的选自氢、C1-C4烷基、C3-C8的烯烷基或C3-C8的炔烷基。
优选的，Ar5-Ar14独立的选自氢、甲基、乙基、丙基、异丙基或叔丁基。
优选的，Ar7和Ar12为甲基，Ar5、Ar6、Ar8、Ar9、Ar10、Ar11、Ar13和Ar14为氢。
优选的，所述的9,10-二苯羰基蒽类衍生物，如下化合物1-27中的任意一种所示：
本发明还提供一种有机发光器件，包括第一电极、第二电极以及位于所述第一电极与第二电极之间的若干个有机功能层，所述有机功能层中的至少一层包括所述的9,10-二苯羰基蒽类衍生物。
优选的，所述的9,10-二苯羰基蒽类衍生物在有机发光器件中用作电子传输材料或主体材料。
本发明的有益效果
本发明提供一种9,10-二苯羰基蒽类衍生物及使用该衍生物的有机发光器件，该衍生物以9,10-二苯羰基蒽为母体，通过改变连接的基团，可进一步改善其物理特性，有效解决电子注入与传输问题，进而提高有机发光器件的发光特性。
实验结果表明，使用本发明提供的9,10-二苯羰基蒽类衍生物制备的有机发光器件，具有较高的发光效率，并且驱动电压低，是一种优异的OLED材料。
具体实施方式
为了进一步理解本发明，下面结合实施例对本发明优选实施方案进行描述，但是应当理解，这些描述只是为进一步说明本发明的特征和优点，而不是对本发明权利要求的限制。
需要说明的是，除非另有规定，本发明所使用的科技术语的含义与本领域技术人员通常所理解的含义相同。
本发明所述烷基是指烷烃分子中少掉一个氢原子而成的烃基，其可以为直链烷基或直链烷基，例如可选自甲基、乙基、丙基、异丙基、正丁基、异丁基、仲丁基、叔丁基、戊基、异戊基或己基等，但不限于此。
本发明所述芳基是指芳烃分子的芳核碳上去掉一个氢原子后，剩下一价基团的总称，其可以为单环芳基或稠环芳基，例如可选自苯基、联苯基、萘基、蒽基、菲基或芘基等，但不限于此。
本发明所述杂芳基是指芳基中的一个或多个芳核碳被杂原子替代得到的基团的总称，所述杂原子包括但不限于氧、硫和氮原子，所述杂芳基可以为单环杂芳基或稠环杂芳基，例如可选自吡啶基、嘧啶基、苯并嘧啶基、咔唑基、三嗪基、苯并噻唑基、苯并咪唑基、吖啶基或茚酮基等，但不限于此。
本发明首先提供一种9,10-二苯羰基蒽类衍生物，具有如式(I)所述的结构式：
其中，Ar1-Ar4独立的选自氢、二苯砜基团、C1-C20的烷基、取代或未取代的C6-C30的芳基、取代或未取代的C4-C50的杂芳基、或取代或未取代的C6-C50的芳香胺基；
Ar5-Ar14独立的选自氢、C1-C20烷基、C3-C20的烯烷基或C3-C20的炔烷基。
按照本发明，所述取代的芳基、取代的杂芳基、取代的芳香胺基中，所述取代基优选自卤素、氰基、C1-C10的烷基、C6-C30的芳基或C4-C30的杂环基中的一种或几种，更优选为氰基、C1-C6的烷基、C6-C30的芳基或C4-C30的杂环基中的一种或几种，这些取代基可任选地进一步被选自这类基团的取代基取代。
Ar1-Ar4优选独立的选自氢或以下结构中的任意一种：
；更优选Ar1与Ar4相同，Ar2与Ar3相同；最优选Ar2与Ar3为氢。
Ar5-Ar14优选独立的选自氢、C1-C4烷基、C3-C8的烯烷基或C3-C8的炔烷基；更优选独立的选自氢、甲基、乙基、丙基、异丙基或叔丁基；最优选Ar7和Ar12为甲基，Ar5、Ar6、Ar8、Ar9、Ar10、Ar11、Ar13和Ar14为氢。
按照本发明，所述9,10-二苯羰基蒽类衍生物，没有特别限定，优选如下所示：
以上列举了本发明所述9,10-二苯羰基蒽类衍生物的一些具体的结构形式，但本发明所述9,10-二苯羰基蒽类衍生物并不局限于所列的这些化学结构，凡是以式(I)所示结构为基础，Ar1-Ar14为如上所限定的基团都应该包含在内。
本发明所述9,10-二苯羰基蒽类衍生物以9,10-二苯羰基蒽为母体，通过改变连接的基团，可进一步改善其物理特性，有效解决电子注入与传输问题，进而提高有机发光器件的发光特性。
本发明所述9,10-二苯羰基蒽类衍生物的制备方法，包括将式II所示的化合物与二氯亚砜进行反应得到式Ⅲ所示的化合物，将式Ⅲ所示的化合物与式Ⅳ和式Ⅴ所示的化合物进行反应得到式Ⅵ所示的化合物，再将式Ⅵ所示的化合物与含有Ar1-Ar4基团的硼酸化物通过Suzuki偶联反应得到式I所示的9,10-二苯羰基蒽类衍生物，或将式Ⅵ所示的化合物与Ar1-Ar4基团通过傅-克烷基化反应得到式I所示的9,10-二苯羰基蒽类衍生物。
本发明对上述各类反应的反应条件没有特殊要求，以本领域技术人员熟知的此类反应的常规条件即可。本发明对上述各类反应中所采用的原料的来源没有特别的限制，可以为市售产品或采用本领域技术人员所熟知的制备方法制备得到。其中，所述Ar1-Ar14的选择同上所述，在此不再赘述。
本发明还提供一种有机发光器件，包括所述9,10-二苯羰基蒽类衍生物。所述有机发光器件为本领域技术人员所熟知的有机发光器件即可，本发明所述有机发光器件优选包括第一电极、第二电极以及位于所述第一电极与第二电极之间的若干个有机功能层，所述有机功能层中的至少一层含有所述的9,10-二苯羰基蒽类衍生物。所述有机功能层优选包括空穴注入层、空穴传输层、电子阻挡层、发光层、空穴阻挡层、电子传输层与电子注入层中的至少一层，优选所述9,10-二苯羰基蒽类衍生物作为有机功能层中的电子传输材料或主体材料。
本发明对以下实施例中所采用的原料的来源没有特别的限制，可以为市售产品或采用本领域技术人员所熟知的制备方法制备得到。
实施例1：化合物1的合成
1、将9,10-二羧基-2，6-二溴蒽(0.01mol，4.24g)置于圆底烧瓶中，加入2.1ml二氯亚砜，反应3小时后，除去未反应的二氯亚砜。之后加入20ml甲苯，三氯化铝(0.02mol，2.67g)，先于0℃反应1小时后，加热至90℃反应过夜，之后停止反应。重结晶得到2.85g产品1-a(产率：50％)。
2、将苯硼酸，9，10-二甲苯基羰基-2,6-二溴蒽，四(三苯基膦)钯，碳酸钠(2M)置于圆底烧瓶中，通入氮气保护，回流48小时，产物经过萃取，干燥后，用柱层析法进行提纯，得到化合物1，产率：70％。
质谱m/z：566.71(计算值：566.69)。理论元素含量(％)C42H30O2：C，89.02；H，5.34；O，5.65实测元素含量(％)：C，89.02；H，5.35；O，5.66。
实施例2：化合物2的合成
合成步骤同实施例1的步骤，只是将步骤2中的苯硼酸改变为4-二苯砜硼酸。
质谱m/z：847.02(计算值：847.01)。理论元素含量(％)C54H38O6S2：C，76.57；H，4.52；O，11.33；S，7.57实测元素含量(％)：C，76.58；H，4.52；O，11.34；S，7.56。
实施例3：化合物3的合成
合成步骤同实施例1的步骤，只是将步骤2中的苯硼酸改变为4-三苯胺硼酸。
质谱m/z：901.0(计算值：901.1)。理论元素含量(％)C66H48N2O2：C，87.97；H，5.37；N，3.11；O，3.55实测元素含量(％)：C，87.97；H，5.38；N，3.10；O，3.54。
实施例4：化合物4的合成
合成步骤同实施例1的步骤，只是将步骤2中的苯硼酸改变为9-(4-苯基)咔唑硼酸。
质谱m/z：897.04(计算值：897.07)。理论元素含量(％)C66H44N2O2：C，88.37；H，4.94；N，3.12；O，3.57实测元素含量(％)：C，88.36；H，4.94；N，3.11；O，3.57。
实施例5：化合物5的合成
合成步骤同实施例1的步骤，只是将步骤2中的苯硼酸改变为10-吩恶嗪硼酸。
质谱m/z：784.95(计算值：784.94)。理论元素含量(％)C54H44N2O4：C，82.63；H，5.65；N，3.57；O，8.15实测元素含量(％)：C，82.63；H，5.65；N，3.58；O，8.15。
实施例6：化合物6的合成
合成步骤同实施例1的步骤，只是将步骤2中的苯硼酸改变为10-吩噻嗪硼酸。
质谱m/z：817.04(计算值：817.07)。理论元素含量(％)C54H44N2O2S2：C，79.38；H，5.43；N，3.43；O，3.92；S，7.85实测元素含量(％)：C，79.37；H，5.43；N，3.42；O，3.93；S，7.83。
实施例7：化合物7的合成
合成步骤同实施例1的步骤，只是将步骤2中的苯硼酸改变为10-氧化吩噻嗪硼酸。
质谱m/z：881.05(计算值：881.07)。理论元素含量(％)C54H44N2O6S2：C，73.61；H，5.03；N，3.18；O，10.90；S，7.28实测元素含量(％)：C，73.62；H，5.03；N，3.18；O，10.89；S，7.28。
实施例8：化合物8的合成
合成步骤同实施例1的步骤，只是将步骤2中的苯硼酸改变为1-萘硼酸。
质谱m/z：666.6(计算值：666.8)。理论元素含量(％)C50H34O2：C，90.06；H，5.14；O，4.80；实测元素含量(％)：C，90.05；H，5.14；O，4.80。
实施例9：化合物9的合成
合成步骤同实施例1的步骤，只是将步骤2中的苯硼酸改变为1-硼酸蒽。
质谱m/z：766.91(计算值：766.92)。理论元素含量(％)C58H38O2：C，90.83；H，4.99；O，4.17；实测元素含量(％)：C，90.81；H，4.99；O，4.17。
实施例10：化合物10的合成
合成步骤同实施例1的步骤，只是将步骤2中的苯硼酸改变为2-硼酸芘。
质谱m/z：819.1(计算值：819.0)。理论元素含量(％)C62H42O2：C，90.92；H，5.17；O，3.91；实测元素含量(％)：C，90.91；H，5.19；O，3.91。
实施例11：化合物11的合成
合成步骤同实施例1的步骤，只是将步骤2中的苯硼酸改变为4-吡啶-苯硼酸。
质谱m/z：568.67(计算值：568.66)。理论元素含量(％)C40H28N2O2：C，84.48；H，4.96；N，4.93；O，5.63实测元素含量(％)：C，84.49；H，4.96；N，4.93；O，5.63。
实施例12：化合物12的合成
合成步骤同实施例1的步骤，只是将步骤2中的苯硼酸改变为3-吡啶-苯硼酸。
质谱m/z：568.66(计算值：568.66)。理论元素含量(％)C40H28N2O2：C，84.48；H，4.96；N，4.93；O，5.63实测元素含量(％)：C，84.49；H，4.96；N，4.93；O，5.63。
实施例13：化合物13的合成
合成步骤同实施例1的步骤，只是将步骤2中的苯硼酸改变为2-吡啶-苯硼酸。
质谱m/z：568.65(计算值：568.66)。理论元素含量(％)C40H28N2O2：C，84.48；H，4.96；N，4.93；O，5.63实测元素含量(％)：C，84.47；H，4.96；N，4.93；O，5.63。
实施例14：化合物14的合成
合成步骤同实施例1的步骤，只是将步骤2中的苯硼酸改变为2,7-二叔丁基-9-(4-苯基)咔唑硼酸。
质谱m/z：1121.51(计算值：1121.49)。理论元素含量(％)C82H76N2O2：C，87.82；H，6.83；N，2.50；O，2.85实测元素含量(％)：C，87.83；H，6.84；N，2.50；O，2.85。
实施例15：化合物15的合成
合成步骤同实施例1的步骤，只是将步骤2中的苯硼酸改变为4,4’-二叔丁基-4-三苯胺硼酸。
质谱m/z：1125.51(计算值：1125.52)。理论元素含量(％)C82H80N2O2：C，87.50；H，7.16；N，2.49；O，2.84实测元素含量(％)：C，87.52；H，7.16；N，2.50；O，2.85。
实施例16：化合物16的合成
合成步骤同实施例1的步骤，只是将步骤2中的苯硼酸改变为2,7-二咔唑基-9-(4-苯基)咔唑硼酸。
质谱m/z：1557.81(计算值：1557.83)。理论元素含量(％)C114H72N6O2：C，87.89；H，4.66；N，5.39；O，2.05实测元素含量(％)：C，87.88；H，4.66；N，5.40；O，2.05。
实施例17：化合物17的合成
合成步骤同实施例1的步骤，只是将步骤2中的苯硼酸改变为2,7-二苯胺基-9-苯基-4-硼酸。
质谱m/z：1567.91(计算值：1567.91)。理论元素含量(％)C114H82N6O2：C，87.33；H，5.27；N，5.36；O，2.04实测元素含量(％)：C，87.32；H，5.26；N，5.36；O，2.05。
实施例18：化合物18的合成
合成步骤同实施例1的步骤，只是将步骤2中的苯硼酸改变为1-吖啶酮硼酸。
质谱m/z：808.95(计算值：808.96)。理论元素含量(％)C56H44N2O4：C，83.14；H，5.48；N，3.46；O，7.91实测元素含量(％)：C，83.12；H，5.48；N，3.46；O，7.91。
实施例19：化合物19的合成
合成步骤同实施例1的步骤，只是将步骤2中的苯硼酸改变为1-噻吨硼酸。
质谱m/z：846.10(计算值：846.08)。理论元素含量(％)C56H45O4S2：C，79.50；H，5.36；O，7.56；S，7.58实测元素含量(％)：C，79.51；H，5.36；O，7.54；S，7.58。
实施例20：化合物20的合成
合成步骤同实施例1的步骤，只是将步骤2中的苯硼酸改变为4-氰基1-硼酸。
质谱m/z：616.70(计算值：616.71)。理论元素含量(％)C44H28N2O2：C，85.69；H，4.58；N，4.54；O，5.19实测元素含量(％)：C，85.68；H，4.58；N，4.54；O，5.19。
实施例21：化合物21的合成
合成步骤同实施例1的步骤，只是将步骤2中的苯硼酸改变为3,5-二氰基1-硼酸。
质谱m/z：666.70(计算值：666.72)。理论元素含量(％)C46H26N4O2：C，82.87；H，3.93；N，8.40；O，4.80实测元素含量(％)：C，82.88；H，3.93；N，8.39；O，4.79。
实施例22：化合物22的合成
合成步骤同实施例1的步骤，只是将步骤2中的苯硼酸改变为9,9’-二甲基-10-吖啶硼酸。
质谱m/z：837.0(计算值：837.1)。理论元素含量(％)C60H56N2O2：C，86.09；H，6.74；N，3.35；O，3.82实测元素含量(％)：C，86.08；H，6.73；N，3.35；O，3.82。
实施例23：化合物23的合成
合成步骤同实施例1的步骤，只是将步骤1中的甲苯改变为苯，将步骤2中的苯硼酸改变为4,6-二苯-2-三嗪硼酸。
质谱m/z：848.93(计算值：848.95)。理论元素含量(％)C58H36N6O2：C，82.06；H，4.27；N，9.90；O，3.77实测元素含量(％)：C，82.08；H，4.26；N，9.89；O，3.77。
实施例24：化合物24的合成
合成步骤同实施例1的步骤，只是将步骤1中的甲苯改变为苯，将步骤2中的苯硼酸改变为4,6-二咔唑-2-三嗪硼酸。
质谱m/z：1205.35(计算值：1205.32)。理论元素含量(％)C82H48N10O2：C，81.71；H，4.01；N，11.62；O，2.65实测元素含量(％)：C，81.72；H，4.01；N，11.63；O，2.67。
实施例25：化合物25的合成
合成步骤同实施例1的步骤，只是将步骤1中的甲苯改变为苯，将步骤2中的苯硼酸改变为4-苯硼酸-2-苯并咪唑。
质谱m/z：768.85(计算值：768.86)。理论元素含量(％)C54H32N4O2：C，84.36；H，4.20；N，7.29；O，4.16实测元素含量(％)：C，84.35；H，4.21；N，7.28；O，4.17。
实施例26：化合物26的合成
合成步骤同实施例1的步骤，只是将步骤1中的甲苯改变为苯，将步骤2中的苯硼酸改变为4-苯硼酸-2-苯并噻唑。
质谱m/z：804.99(计算值：804.97)。理论元素含量(％)C54H32N2O2S2：C，80.57；H，4.01；N，3.48；O，3.98；S，7.97实测元素含量(％)：C，80.57；H，4.01；N，3.49；O，3.98；S，7.97。
实施例27：化合物27的合成
合成步骤同实施例1的步骤，只是将步骤1中的甲苯改变为苯，将步骤2中的苯硼酸改变为4-苯硼酸-2-喔喹啉。
质谱m/z：794.88(计算值：794.89)。理论元素含量(％)C56H34N4O2：C，84.61；H，4.31；N，7.05；O，4.03实测元素含量(％)：C，84.60；H，4.31；N，7.05；O，4.03。
对比应用实施例1：
选取ITO玻璃为阳极，超声清洗后干燥置于真空腔中，抽真空至5×10-5Pa，在上述阳极基板上真空蒸镀NPB作为空穴传输层，蒸镀速率为0.1nm/s，蒸镀厚度为45nm。在空穴传输层上真空蒸镀A-1作为发光层，蒸镀速率为0.005nm/s，蒸镀厚度为33nm。在发光层上真空蒸镀Bphen作为电子传输层，蒸镀速率为0.01nm/s，蒸镀厚度为24nm。在电子传输层上真空蒸镀LiF作为电子注入层和Al层作为阴极，厚度分别为1.6nm和170nm。测量该器件的发光性能，结果见表1。
应用实施例1：
选取ITO玻璃为阳极，超声清洗后干燥置于真空腔中，抽真空至5×10-5Pa，在上述阳极基板上真空蒸镀NPB作为空穴传输层，蒸镀速率为0.1nm/s，蒸镀厚度为45nm。在空穴传输层上真空蒸镀本发明化合物1作为发光层，蒸镀速率为0.005nm/s，蒸镀厚度为33nm。在发光层上真空蒸镀Bphen作为电子传输层，蒸镀速率为0.01nm/s，蒸镀厚度为24nm。在电子传输层上真空蒸镀LiF作为电子注入层和Al层作为阴极，厚度分别为1.6nm和170nm。测量该器件的发光性能，结果见表1。
应用实施例2：
将应用实施例1中的化合物1换成化合物2。测量该器件的发光性能，结果见表1。
应用实施例3：
将应用实施例1中的化合物1换成化合物3。测量该器件的发光性能，结果见表1。
应用实施例4：
将应用实施例1中的化合物1换成化合物4。测量该器件的发光性能，结果见表1。
应用实施例5：
将应用实施例1中的化合物1换成化合物5。测量该器件的发光性能，结果见表1。
应用实施例6：
将应用实施例1中的化合物1换成化合物8。测量该器件的发光性能，结果见表1。
应用实施例7：
将应用实施例1中的化合物1换成化合物11。测量该器件的发光性能，结果见表1。
应用实施例8：
将应用实施例1中的化合物1换成化合物22。测量该器件的发光性能，结果见表1。
应用实施例9：
将应用实施例1中的化合物1换成化合物23。测量该器件的发光性能，结果见表1。
表1本发明实施例制备的发光器件的发光特性
应用实施例10：
选取ITO玻璃为阳极，超声清洗后干燥置于真空腔中，抽真空至5×10-5Pa，在上述阳极基板上真空蒸镀NPB作为空穴传输层，蒸镀速率为0.1nm/s，蒸镀厚度为45nm。在空穴传输层上真空蒸镀化合物A-1作为发光层，蒸镀速率为0.005nm/s，蒸镀厚度为33nm。在发光层上真空蒸镀本发明化合物2作为电子传输层，蒸镀速率为0.01nm/s，蒸镀厚度为24nm。在电子传输层上真空蒸镀LiF作为电子注入层和Al层作为阴极，厚度分别为1.6nm和170nm。测量该器件的发光性能，结果见表2。
应用实施例11：
将应用实施例10中的化合物2换成化合物3。测量该器件的发光性能，结果见表2。
应用实施例12：
将应用实施例10中的化合物2换成化合物4。测量该器件的发光性能，结果见表2。
应用实施例13：
将应用实施例10中的化合物2换成化合物11。测量该器件的发光性能，结果见表2。
表2本发明实施例制备的发光器件的发光特性
可以看出，使用本发明提供的9,10-二苯羰基蒽类衍生物制备的有机发光器件，具有较高的发光效率，并且驱动电压低，是一种优异的OLED材料。
显然，以上实施例的说明只是用于帮助理解本发明的方法及其核心思想。应当指出，对于所述技术领域的普通技术人员来说，在不脱离本发明原理的前提下，还可以对本发明进行若干改进和修饰，这些改进和修饰也落入本发明权利要求的保护范围内。

Claims (8)

1.9,10-二苯羰基蒽类衍生物，具有如式(I)所述的结构式：
其中，Ar1、Ar4独立的选自以下结构中的任意一种：
Ar2与Ar3为氢；
Ar5-Ar14独立的选自氢、C1-C20烷基、C3-C20的烯烷基或C3-C20的炔烷基。
2.根据权利要求1所述的9,10-二苯羰基蒽类衍生物，其特征在于，Ar1与Ar4相同，Ar2与Ar3相同。
3.根据权利要求1所述的9,10-二苯羰基蒽类衍生物，其特征在于，Ar5-Ar14独立的选自氢、C1-C4烷基、C3-C8的烯烷基或C3-C8的炔烷基。
4.根据权利要求1所述的9,10-二苯羰基蒽类衍生物，其特征在于，Ar5-Ar14独立的选自氢、甲基、乙基、丙基、异丙基或叔丁基。
5.根据权利要求1所述的9,10-二苯羰基蒽类衍生物，其特征在于，Ar7和Ar12为甲基，Ar5、Ar6、Ar8、Ar9、Ar10、Ar11、Ar13和Ar14为氢。
6.根据权利要求1所述的9,10-二苯羰基蒽类衍生物，其特征在于，如下化合物1-27中的任意一种所示：
7.一种有机发光器件，包括第一电极、第二电极以及位于所述第一电极与第二电极之间的若干个有机功能层，其特征在于，所述有机功能层中的至少一层包括权利要求1～6任一项所述的9,10-二苯羰基蒽类衍生物。
8.根据权利要求7所述的一种有机发光器件，其特征在于，权利要求1～6任一项所述的9,10-二苯羰基蒽类衍生物在有机发光器件中用作电子传输材料或主体材料。
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