CN106517086A - Large-area high-resolution wide-field online measurement device and measurement method thereof - Google Patents
Large-area high-resolution wide-field online measurement device and measurement method thereof Download PDFInfo
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- CN106517086A CN106517086A CN201610921773.2A CN201610921773A CN106517086A CN 106517086 A CN106517086 A CN 106517086A CN 201610921773 A CN201610921773 A CN 201610921773A CN 106517086 A CN106517086 A CN 106517086A
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
- B82B3/00—Manufacture or treatment of nanostructures by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
- B82B3/0085—Testing nanostructures
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y35/00—Methods or apparatus for measurement or analysis of nanostructures
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Abstract
The invention discloses a large-area high-resolution wide-field online measurement device and a measurement method for nanostructure films. Light emitted by a light source is converted into a single-wavelength light beam through a wavelength selector, and the single-wavelength light beam is converted into an elliptic polarized beam which is then projected to a to-be-measured nanostructure film. A film reflection beam passes through an imaging unit and a polarization state analysis unit to enter an area array detector to obtain imaging spectrum ellipsometry measurement data of the to-be-measured nanostructure film. The data are matched with theoretical values and extracted to obtain parameter values of the to-be-measured nanostructure film at corresponding pixels, and the extracted parameter values form three-dimensional micrograph morphology of the to-be-measured nanostructure film. The problem that an existing device is small in focal depth value of an instrument and difficult to realize wide-field clear imaging and high-transverse-resolution measurement at the same time is solved, and large-area high-resolution accurate measurement of the nanostructure film is truly realized.
Description
Technical field
The invention belongs to large-area nano structure in nanometer manufacture, the particularly manufacture of scale nanometer and flexible electronic manufacture
The online process monitoring of thin film and optimization control field, and in particular to a kind of nano structure membrane large area high-resolution (includes
Longitudinal resolution and lateral resolution) wide visual field on-line measurement measurement apparatus and its measuring method.
Background technology
Nanometer manufacture refers to the manufacturing technology that product feature size is nanometer scale, i.e., characteristic size is within 100nm
Manufacturing technology.In order to reduce a nanometer manufacturing cost, in recent years in new industries such as flexible electronic, photovoltaic, flat pannel display
In field, more using volume to volume (roll-to-roll) or piece to the extensive nanometer manufacture work such as piece (sheet-to-sheet)
Skill.Light in order to realize effective process monitoring, in the particularly extensive nanometer manufacture of nanometer manufacture to nano structure membrane
Learning constant, thickness, nano structure live width, line height, the geometric parameter such as side wall angle carries out large area, quick, inexpensive, non-breaks
The accurate measurement tool of bad property is of great significance.Additionally, in some extensive nanometer manufactures, to large-area nano structure
When thin film is measured, often require that measurement means are provided simultaneously with higher longitudinal resolution and lateral resolution.It is aobvious with flat board
As a example by Organic Light Emitting Diode (OLED) manufacturing process shown, the organic film in OLED is generally very thin, only hundred nanometers
Each pixel in magnitude, and OLED is made up of for each one R sub-pixels, G sub-pixel and B sub-pixels, each sub-pixel unit
Size in micron dimension.In order to realize the accurate survey to organic film thickness in each sub-pixel unit and optical characteristics
Amount, this requires that measurement means must be provided simultaneously with the lateral resolution of the longitudinal resolution and micron dimension of nanometer scale.
Conventional scanning electron microscope (SEM), atomic force microscope (AFM) and transmission electron microscope (TEM) etc. are measured
Means can meet the measurement requirement of nano-grade size, but which has the disadvantage that speed is slow, high cost, equipment operation are complicated, is difficult to
It is integrated on manufacturing process line and realizes on-line measurement, and is not used to characterize the optical characteristics such as the optical constant of material.With
Compare, measuring method has the advantages that measuring speed fast, low cost, contactless, non-destructive and is easy to Online integration,
Thus be applied widely in advanced process-monitor and optimization control field always.Traditional optical measuring method such as optical microphotograph
Mirror can realize the measurement of micron dimension lateral resolution physical dimension, can reach especially by optimization instrument light path design
Lateral resolution corresponding to optical resolution limit, but optical microscope can not be normal to the thickness of thin-film material and its optics
Number is measured.The interference micrometering technology further developed on the basis of optical microscope, can realizeMagnitude
The accurate measurement of longitudinal resolution and 1 μm or so lateral resolution physical dimension, but can not be to the optical constant of thin-film material
Carry out accurate characterization.Although also there is the report for measuring refractive index using interferometric method in document, often need in concrete measurement
The thickness of sample to be known a priori by, and device is more complicated.
Transmission spectra ellipsometry method is that a kind of change by measuring the polarization state of light is thin to obtain testing sample
The measuring method of the information such as film thickness and its optical constant, its film thickness measuring precision (longitudinal resolution) can reachIts optical constant certainty of measurement can generally achieve 10-4Magnitude.Spectroscopic Ellipsometry e measurement technology started before and after 2000
The measurement of sub-wavelength nanostructured critical size is applied to, be now generally otherwise known as optical scattering e measurement technology.In recent years, with
The continuous lifting of nanometer manufacturing technology level, is received in scale based on the optical scattering e measurement technology of transmission spectra ellipsometry
The metric system is increasingly widely applied in terms of making the on-line measurement of middle nano structure membrane geometric parameter and optical constant etc..
Although Spectroscopic Ellipsometry measuring method has higher longitudinal resolution, its lateral resolution is by the light for exposing to sample surfaces
Spot diameter is determined with sample stage mobile accuracy, generally in millimeter magnitude.After even adding micro- laser spot detection light path, which is horizontal
Resolution is general at most also can only be in 25～50 μm of magnitudes.It is ellipse that a kind of imaging spectral is disclosed in patent CN201410733437.6
Inclined e measurement technology, Spectroscopic Ellipsometry e measurement technology is combined by the technology with micro-imaging technique, so as to make full use of Spectroscopic Ellipsometry
The advantage of the high longitudinal resolution of e measurement technology and micro-imaging technique high lateral resolution.But the measurement disclosed in the patent is filled
Put due to its one-step image reconstruction light channel structure based on conventional bevel mirror image system, the depth of focus value very little of instrument so that the dress
Put and be difficult to while realize that wide visual field blur-free imaging and high lateral resolution are measured, also just cannot really realize nano structure membrane
Large area high-resolution accurate measurement.
The content of the invention
For the measurement demand in the manufacture of extensive nanometer and the defect of existing e measurement technology, the present invention provides one kind and receives
Rice structural membrane geometric parameter large area high-resolution wide visual field on-line measurement device and its measuring method, to solve existing dress
Put instrument depth of focus value very little, device to be difficult to while realizing wide visual field blur-free imaging and high lateral resolution measurement problem, real reality
The large area high-resolution accurate measurement of existing nano structure membrane.
Technical solution of the present invention is：A kind of nano structure membrane large area high-resolution wide visual field on-line measurement device, bag
Include and be polarized arm (8) and analyzing arm (24) wherein：
Arm (8) and the analyzing arm (24) of being polarized is respectively with thin film planar normal to be measured into identical inclination angle；
The arm (8) that is polarized is coaxial with incident illumination, for external light source incident illumination is collimated, obtains collimated light beam,
Carry out polarization state modulation simultaneously to incident illumination, obtain elliptically polarized light；
Analyzing arm (24) are located in film reflector light path to be measured, and which is single by relay imaging unit (14), vertical imaging
First (18) and Polarization unit (22) put composition successively；Wherein：
Relay imaging unit (14) are put according to optical axis coincidence, focal length conjugation by frontal lens (12) and rear lenses (13)
Composition；Its front focus is overlapped with thin film center to be measured；
Vertical image-generating unit (18) are put by high-NA objective (16) and tube lens (17) common optical axis conjugation；
The back focal plane of tube lens (17), is provided with the sensitive chip of planar array detector (23), for realizing blur-free imaging；
Relay imaging unit (14) back focal length is conjugated with the front focal length of vertical image-generating unit (18), and between the two
Optical axis included angle meets formula, is wherein external light source relative to the angle of incidence of thin film to be measured, and corresponds to frontal lens (12) respectively
The front focal plane focal length of back focal plane focal length and rear lenses (13)；Vertical image-generating unit (18) is with Polarization unit (22) using altogether
Optical axis is put；So as to realize the wide visual field blur-free imaging and high resolution measurement of instrument；
Polarization unit (22) for carrying out Polarization to the light beam of vertical image-generating unit (18) outgoing,
So as to measure the ellipsometric parameter of testing sample.
Further, the arm that is polarized includes collimating lens (5) and polarization state generation unit PSG (7), and both are set with optical axis
Put, the collimating lens are sent into polarization state generation unit PSG (7) and realize polarization for collimating to outside light source incidence light
The modulation of state.
Further, described polarization state generation unit PSG (7) include the polarizer (6), now correspond to Polarization unit
(22) it is made up of the phase compensator (20) and analyzer (21) that rotate；
Further, polarization state generation unit PSG (7) are by the polarizer (6) and phase compensator (28) group of rotation
Into now corresponding Polarization unit is made up of analyzer (21).
Further, polarization state generation unit (7) are arranged by sequentially common optical axis the polarizer, front ferroelectric liquid crystals device
Part, quarter wave plate and rear ferroelectric liquid crystal devices (4) composition, now corresponds to Polarization unit (22) by ferroelectric liquid crystal devices
(5), quarter wave plate (6), ferroelectric liquid crystal devices (7) and analyzer (8) common optical axis are put successively；By controlling 4 ferroelectric liquid crystals devices
The voltage direction of part, produces 2 kinds of different conditions of ferroelectric phase and paraelectric phase, so as to produce the polarized light of 4 kinds of different polarization states, Jing
Polarization unit obtains all 16 elements in the Muller matrix M of testing sample.
Further, polarization state generation unit (7) are made up of the phase compensator (28) of the polarizer (6) and rotation,
Now correspond to Polarization unit to be made up of the phase compensator (20) and analyzer (21) that rotate, and phase compensator (28)
With the fast axle of phase compensator (20) with certain rotating ratio synchronous rotary；Rotating ratio is preferably 5:1、5:2 and 5:3.
Further, the external light source includes light source (1), wavelength selector (2), fiber coupler (3) and output light
Fine (4)；Light Jing wavelength selectors (2) that light source (1) is produced is changed into single-wavelength light, and Jing fiber couplers (3) send output optical fibre
(4), outfan of the output optical fibre (4) for external light source.
Further, also including control system, the control system with it is synchronous arrange be connected, the synchronizer be located at
In being polarized arm (8), the first hollow motor (29) is connected with the second hollow motor (19) in analyzing arm (24), for controlling in two-arm
Phase compensator with certain rotating ratio synchronous rotary, and then realize the modulation and demodulation of polarization state.
It is another aspect of this invention to provide that the present invention also proposes a kind of nano structure membrane large area high-resolution wide visual field
On-line Measuring Method, comprises the steps：
(1) nano structure membrane to be measured is placed on sample stage；
(2) imaging optical path is adjusted, obtains the blur-free imaging in sample region to be measured on planar array detector；
(3) by Single wavelength collimated light beam after polarization state generation unit is modulated, obtain elliptically polarized light and be projected to
Nano structure membrane surface to be measured；
(4) nano structure membrane surface reflection to be measured is carried out, after polarization state demodulation, entering in planar array detector, obtaining
The reflective light intensity signal under different polarization state；
(5) the reflective light intensity signal obtained according to (4th) step, is calculated nano structure membrane corresponding surface battle array detection to be measured
Measurement ellipsometric parameter on device at each pixel, the corresponding measurement ellipsometric parameter of all pixels point are constituted in whole field of view
The imaging ellipsometry data of testing sample.
(6) change incident beam wavelength and incident beam angle of incidence, rotate sample stage with change incident beam with
Between nano structure membrane to be measured, institute is into azimuth；Repeat (2nd) step～the (5) step, different wave length, incidence can be calculated
Actual imaging ellipsometric data under angle and azimuth configuration；
(7) under the configuration of given wavelength, angle of incidence and azimuth, calculate nano structure membrane to be measured it is corresponding it is theoretical into
As ellipsometric data；When sample is thin film, calculated using fresnel formula；When sample is nanostructured, using strict
Coupled Wave Analysis (RCWA), FInite Element (FEM), boundary element method (BEM) or finite time-domain calculus of finite differences (FDTD) are calculated；
(8) calculate to actually measuring any pixel on the imaging spectral ellipsometric data for obtaining, the picture can be obtained
The parameter value to be measured of corresponding nanostructured at vegetarian refreshments；The parameter value to be measured for completing the corresponding nanostructured of all pixels point is asked
Solution, finally gives the three-dimensional microstructure of nanostructured to be measured in whole field of view.
Three-dimensional microstructure of the present invention includes the height of nanometer size of three dimensional structure cross direction profiles and longitudinal direction.It is described
Ellipsometric parameter includes the full Muller matrix M at the amplitude ratio angle, phase angle and measurement testing sample for measuring testing sample.
The nano structure membrane geometric parameter large area high-resolution wide visual field on-line measurement device that the present invention is provided, which is special
Levy and be, the device transmission spectra ellipsometer be polarized light path in set up wavelength selector (such as monochromator, acousto-optic is adjustable filtering
Device or liquid crystal tunable filter), to realize continuously adjusting for wavelength, two step imaging optical path systems are had additional in analyzing light path
System, corresponds to relay imaging unit and vertical image-generating unit respectively, while by the linear array detector in analyzing light path (such as spectrogrph)
Planar array detector (such as CCD or CMOS cameras) is replaced with, to collect nano structure membrane to be measured in whole imaging viewing field region
Imaging spectral ellipsometry data.After the imaging spectral ellipsometry data for obtaining testing sample, by image
Each pixel carries out independent Ellipsometry Measurement, accurately can reconstruct the large area region comprising whole imaging viewing field in real time
The geometric parameter three-dimensional microstructure of interior nano structure membrane to be measured and optical constant three-dimensional microstructure.
Compared with the imaging spectral elliptical bias detector disclosed in patent CN201410733437.6, the survey that the present invention is provided
Amount device is with the longitudinal resolution suitable with which (depending on the certainty of measurement of spectroscopic ellipsometers).Except that, patent
The lateral resolution of the imaging spectral elliptical bias detector disclosed in CN201410733437.6 is relatively low and cannot realize wide visual field
Blur-free imaging, and the measurement apparatus that the present invention is provided can be realized high lateral resolution measurement simultaneously and include whole imaging viewing field
The wide visual field blur-free imaging in region.This is filled due to the imaging spectral ellipsometry disclosed in patent CN201410733437.6
Put, its imaging optical path is substantially a tilting mirrors imaging system, and angle of inclination is incident beam optical axis and testing sample surface
Angle theta between normal (for different materials, θ values are typically at 55 °～75 °) typically near Brewster angle.Inclining
Under imaging pattern, due to the restriction of system depth of focus, simply of testing sample surface clearly region in whole imaging viewing field
Long and narrow belt-like zone, the sample surfaces outside this region are all fuzzy.Be capable of the width of blur-free imaging belt-like zone with
In imaging system, the numerical aperture (NA) of imaging len and sin θ are inversely proportional to.Obviously, in the case where θ is certain, NA is less, clearly
Imaging region is wider.However, NA is bigger, the lateral resolution of system is lower.
The image-forming principle of the two step imaging optical path systems that the present invention is provided is as shown in Figure 1.Wherein, θ is angle of incidence (reflection
Angle), lens 3 and lens 4 constitute relay imaging unit 2；Lens 7 and lens 8 constitute vertical image-generating unit 6.Lens 3 and lens 4
Optical axis coincidence arrange that using conjugate focal distances the optical axis coincidence of lens 7 and lens 8 is using conjugate focal distances arrangement, front Jiao of lens 7
Away from the back focal length with lens 4 also using conjugation arrangement.Between the optical axis of relay imaging unit and the optical axis of vertical image-generating unit into
Certain angle theta ', the relation between θ ' and θ are determined by following formula：
Wherein f1And f2The focal length of lens 3 and lens 4, f is corresponded to respectively2/f1It is also the times magnification of relay imaging unit simultaneously
Rate.Sample region 1 to be measured is located at the front focal plane of lens 3, and the image 5 obtained after relay imaging unit 2 is located at lens 4
Back focal plane at, while also being located at the front focal plane of lens 7.Image 5 obtains image 9, image after vertical image-generating unit 6
9 are further obtained by the photosurface of planar array detector and carry out follow-up data processing.
Numerical aperture NA of lens 3 in the two step imaging optical path systems that the present invention is provided1Determine whole imaging system
Lateral resolution, its numerical value can be estimated by following formula：
Wherein c is constant, and λ is illumination light wavelength, and ε is that minimal transverse distance that imaging system can respectively (can be according to setting
Count requirement to determine).Under the conditions of incoherent illumination, c=0.61；Under the conditions of coherent illumination, c=0.77.The main use of lens 7
Way is to collect the light beam from relaying image-generating unit outgoing, its numerical aperture NA as much as possible2Value can be estimated by following formula：
NA2=nsin θ ' (3)
Wherein n is object space medium refractive index.When medium is air, n=1.The selection of lens 4 and lens 8 is mainly simultaneous
Turn round and look at the enlargement ratio M of whole imaging system：
Wherein f3And f4The focal length of lens 7 and lens 8, f is corresponded to respectively4/f3For the enlargement ratio of vertical image-generating unit.For
Cause analyzing light path compact, the enlargement ratio f of general relay imaging unit2/f1≤1。
Used as the improvement of above-mentioned technical proposal, apparatus of the present invention specifically include light source, wavelength selector, fiber coupler,
Optical fiber is drawn, collimating mirror, polarization state generation unit (PSG) are polarized arm, for placing the rotary sample of nano structure membrane to be measured
Platform, goniometer, relay imaging unit, vertical image-generating unit, Polarization unit (PSA), analyzing arm, planar array detector, control
Device processed, synchronizer, and computer.Light source, wavelength selector and fiber coupler are located in same light path, are led between three
Optical fiber connection is crossed, the one end for drawing optical fiber is connected on fiber coupler, standard is located at from the light beam for drawing the extraction of the optical fiber other end
The focal position of straight mirror.Collimating mirror and polarization state generation unit are located at and are polarized light path, and are arranged on and are polarized on arm；Relay imaging
Unit, vertical image-generating unit and Polarization unit are located at analyzing light path, and are arranged on analyzing arm.It is polarized arm and analyzing
Arm is symmetrically arranged on goniometer with identical inclination angle theta, and polarization state generation unit therein and Polarization unit are by controlling
Device is controlled and is connected with computer.Vertical image-generating unit and Polarization unit in analyzing light path is designed using common optical axis,
Its optical axis and relay imaging cell optic axis form an angle θ ', and the angle can be entered by the goniometer on analyzing arm
Row is adjusted.The region to be measured of sample is located in the front end focus of relay imaging unit, relay imaging unit and vertical image-generating unit
Between focal length using conjugation arrangement, planar array detector be arranged on vertical image-generating unit rear end focal plane after, with ensure collection
The definition of image.
The utilization said apparatus that the present invention is provided carry out nano structure membrane optical constant and thickness, nano structure
Geometric parameter large area, high-resolution, wide visual field, the methods of on-line measurement such as live width, line height, side wall angle, specifically include following
Step：
1st step is placed in nano structure membrane to be measured on specimen rotating holder, debugs light path, obtains planar array detector to be measured
The blur-free imaging in region；
2nd step successively becomes parallel beam through wavelength selector and collimating lens by the light beam that light source sends, then
Nano structure membrane surface to be measured is projected to after polarization state generation unit obtains elliptical polarization light beam；
3rd step elliptical polarization light beam through nano structure membrane surface to be measured reflection after, successively through relay imaging unit
With vertical image-generating unit, then through Polarization unit, planar array detector is finally entered.Collected using planar array detector and obtained
Reflected light (when testing sample is periodic nano-structure, reflected light corresponds to survey the zero order diffracted light of nanostructured) is corresponding
Light intensity signal, obtains different polarization state under reflected light with Polarization unit to collect by controlling polarization state generation unit
Light intensity signal；
The light intensity signal of the reflected light that the 4th step is collected according to the 3rd step, is calculated nano structure membrane corresponding surface to be measured
Measurement ellipsometric parameter (i.e. amplitude ratio angle Ψ and phase angle Δ or Muller matrix M) on array detector at each pixel,
The corresponding measurement ellipsometric parameter of all pixels point constitutes the imaging ellipsometry data of testing sample in whole field of view；
5th step changes the wavelength X of incident beam using wavelength selector, and rotation is polarized arm and analyzing arm to change incident illumination
The incidence angle θ (needing to adjust the angle theta ' between relay imaging cell optic axis and vertical image-generating unit optical axis simultaneously) of beam, rotates
Sample stage is (when testing sample is as thin film, square into azimuth φ to change institute between incident beam and nano structure membrane to be measured
Parallactic angle φ can be fixed as arbitrary value；When testing sample is periodic nano-structure, azimuth φ is defined as the plane of incidence and sample
Product surface intersection line is with nanostructured cycle to be measured direction angulation)；Repeat the 2nd step～the 4th step, obtain different wave length, incidence
Imaging ellipsometry data under angle and azimuth configuration；
6th step calculates the corresponding theory of nano structure membrane to be measured under the configuration of given wavelength, angle of incidence and azimuth
Ellipsometric parameter；
In the imaging ellipsometry data that 6th step calculated theoretical ellipsometric parameter and the 5th step are obtained by the 7th step each
Pixel or the corresponding measurement ellipsometric parameter of every group of pixel are matched, and therefrom extract the nano junction at corresponding pixel points
The parameter to be measured of structure thin film；The parameter value to be measured of the corresponding nano structure membrane of all pixels point, finally constitutes whole visual field area
The three-dimensional microstructure of nano structure membrane to be measured in domain.
Nano structure membrane large area, high-resolution, wide visual field, on-line measurement device and measurement side that the present invention is provided
Method, is on the basis of transmission spectra ellipsometer, by having additional wavelength selector being polarized in light path, to realize the company of wavelength
It is continuous to adjust, introduce two step imaging optical path systems, i.e. relay imaging unit and vertical image-generating unit in analyzing light path, and by analyzing
Linear array detector in light path is replaced with planar array detector, to collect nano structure membrane to be measured in whole imaging viewing field region
Imaging spectral ellipsometry data.By selecting the lens in appropriate value aperture and enlargement ratio, can realize that width is regarded simultaneously
Field blur-free imaging is measured with high lateral resolution.It is independent by carrying out to each pixel in imaging spectral ellipsometry data
Ellipsometry Measurement, accurately can reconstruct nano structure membrane to be measured in the large area region including whole imaging viewing field in real time
Three-dimensional microstructure.Meanwhile, the measurement apparatus and measuring method that the present invention is provided substantially remain a kind of measuring method,
Meet nanometer manufacture and be particularly optical constant (refractive index n and extinction coefficient k) in extensive nano structure membrane manufacture process
It is thick with geometric parameter such as characteristic line breadth, line height, side wall angle, period pitch, overlay error and the line side of thickness, nanostructured
The on-line measurement of rugosity and line width roughness, the large area of the present invention, quick, low cost, the advantage of non-destructive accurate measurement,
Online process monitoring in the manufacture of scale nanometer is had a wide range of applications with optimization control field.
Description of the drawings
Fig. 1 is the two step imaging optical path system imaging principle schematics that the present invention is provided；
Fig. 2 is polarization state generation unit when the present invention provides the amplitude ratio angle Ψ and phase angle Δ of measurement testing sample
(PSG) the embodiment schematic diagram with Polarization unit (PSA)；
Fig. 3 is polarization state generation unit (PSG) and polarization state when the present invention provides the full Muller matrix M of measurement testing sample
The embodiment schematic diagram of analytic unit (PSA)；
Fig. 4 is the measurement apparatus structure provided by the present invention for measuring testing sample amplitude ratio angle Ψ and phase angle Δ
Schematic diagram；
Fig. 5 is the measurement apparatus structural representation provided by the present invention for measuring the full Muller matrix M of testing sample；
Fig. 6 is typical film samples schematic diagram；
Fig. 7 is the typical nanostructured schematic diagram in photoetching process.
Specific embodiment
In order that the objects, technical solutions and advantages of the present invention become more apparent, it is below in conjunction with drawings and Examples, right
The present invention is described in further detail.It should be appreciated that specific embodiment described herein is only to explain the present invention, and without
It is of the invention in limiting.
For the ease of description, the characteristics of in combination with ellipsometry method, when specific embodiment is illustrated, it is divided into two
Dividing is carried out, and is respectively：(1) imaging spectral ellipsometric data measurement part；(2) measurement data analysis part.Wherein DATA REASONING portion
Point, according to the difference of apparatus measures parameter, it is described separately the amplitude ratio angle Ψ and phase angle Δ instrument of measurement testing sample
The specific embodiment of the full Muller matrix M instruments of specific embodiment and measurement testing sample.
According to the difference of apparatus measures parameter, the polarization state generation unit in apparatus of the present invention and Polarization unit tool
Body can be divided into two kinds of embodiments：(1) the amplitude ratio angle Ψ and phase angle Δ of testing sample, its embodiment such as Fig. 2 are measured
It is shown.Wherein, polarization state generation unit is made up of the polarizer 1, now corresponds to Polarization unit by whirl compensator 2 and inspection
Device 3 partially is constituted.In addition, polarization state generation unit also can be made up of the polarizer 1 and whirl compensator 2, polarization state point is now corresponded to
Analysis unit is made up of analyzer 3.The principle of both scheme measuring samples amplitude ratio angle Ψ and phase angle Δ is of equal value.
(2) the full Muller matrix M of testing sample is measured, its embodiment is as shown in Figure 3.Wherein, polarization state generation unit is by the polarizer 1
Constitute with whirl compensator 2, now correspond to Polarization unit and be made up of whirl compensator 3 and analyzer 4, and rotation compensation
The fast axle of device 2 and whirl compensator 3 has 5 with certain rotating ratio synchronous rotary, conventional rotating ratio:1、5:2 and 5:3.In addition,
Polarization state generation unit can also be made up of the polarizer 1, ferroelectric liquid crystal devices 2, quarter wave plate 3 and ferroelectric liquid crystal devices 4, now
Correspondence Polarization unit is made up of ferroelectric liquid crystal devices 5, quarter wave plate 6, ferroelectric liquid crystal devices 7 and analyzer 8.4 ferroelectricities
Liquid crystal device can be switched between 2 kinds of different conditions by control voltage so that polarization state generation unit can produce 4 kinds
The polarized light of different polarization state, correspondence Polarization unit can analyze the polarization state of 4 kinds of different polarization light, and then obtain
The full Muller matrix of testing sample.
(1) imaging spectral ellipsometric data measurement
Fig. 4 is the measurement apparatus provided by the present invention for measuring testing sample amplitude ratio angle Ψ and phase angle Δ.It is main
Light source to be included 1, wavelength selector 2, fiber coupler 3, output optical fibre 4, collimating lens 5, the polarizer 6, polarization state produce single
Unit 7, is polarized arm 8, and specimen rotating holder 9, nano structure membrane to be measured 10, goniometer 11, frontal lens 12, rear lenses 13 are relayed into
As unit 14, goniometer 15, high-NA objective 16, tube lens 17, vertical image-generating unit 18, hollow motor 19, phase place
Compensator 20, analyzer 21, Polarization unit 22, planar array detector 23, analyzing arm 24, synchronizer 25, controller 26,
Computer 27.
Light source 1, wavelength selector 2 and fiber coupler 3 are located in same light path, are connected by optical fiber between three, defeated
The one end for going out optical fiber 4 is connected on fiber coupler, and the light beam drawn from the output optical fibre other end is located at the focus position of collimating mirror 5
Put, the polarizer 6 in collimating lens 5 and polarization state generation unit 7 is located at and is polarized in light path, and is fixed on and is polarized on arm 8.It is front
Mirror 12 and rear lenses 13 are in same light path, and two focal length of lens conjugation put composition relay imaging unit 14.It is polarized 8 He of arm
Relay imaging unit 14 observes the principle of reflection of light, is symmetrically arranged on goniometer 11 with identical inclination angle, and nano junction to be measured
At the front focal plane of 10 frontal lens 12 of structure thin film.
Vertical image-generating unit 18 is made up of high-NA objective 16 and tube lens 17, wherein vertical image-generating unit 18 with
Relay imaging unit 14 is placed on the both sides of goniometer 15 according to the angle that formula (1) is described.In hollow motor 19
Phase compensator 20 and analyzer 21 collectively constitute Polarization unit 22, vertical image-generating unit 18, Polarization unit
22 and planar array detector 23 be located at same light path on, be fixed on 24 on analyzing arm together with relay imaging unit 14.Face battle array is visited
Survey 23 sensitive chip of device to be located on the back focal plane of tube lens 17.
Computer 27 is controlled hollow motor 19 and is rotated by controller 26, while operating synchronizer 25 to catch rotation
The high level signal that motor 19 sends, so as to trigger planar array detector 23, carries out the collection and storage of data.
Fig. 5 is the measurement apparatus provided by the present invention for measuring the full Muller matrix M of testing sample.Mainly include light source 1,
Wavelength selector 2, fiber coupler 3, output optical fibre 4, collimating lens 5, the polarizer 6, hollow motor 28, phase compensator 29,
Polarization state generation unit 7, is polarized arm 8, specimen rotating holder 9, nano structure membrane to be measured 10, goniometer 11, frontal lens 12, afterwards thoroughly
Mirror 13, relay imaging unit 14, goniometer 15, high-NA objective 16, tube lens 17, vertical image-generating unit 18 are hollow
Motor 19, phase compensator 20, analyzer 21, Polarization unit 22, planar array detector 23, analyzing arm 24, synchronizer
25, controller 26, computer 27, phase compensator 28 and hollow motor 29.
Light source 1, wavelength selector 2 and fiber coupler 3 are located in same light path, are connected by optical fiber between three, defeated
The one end for going out optical fiber 4 is connected on fiber coupler, and the light beam drawn from the output optical fibre other end is located at the focus position of collimating mirror 5
Put, the polarizer 6 in collimating lens 5 and polarization state generation unit 7 is located at and is polarized in light path, and is fixed on and is polarized on arm 8.It is front
Mirror 12 and rear lenses 13 are in same light path, and two focal length of lens conjugation put composition relay imaging unit 14.It is polarized 8 He of arm
Relay imaging unit 14 observes the principle of reflection of light, is symmetrically arranged on goniometer 11 with identical inclination angle, and nano junction to be measured
At the front focal plane of 10 frontal lens 12 of structure thin film.
Vertical image-generating unit 18 is made up of high-NA objective 16 and tube lens 17, wherein vertical image-generating unit 18 with
Relay imaging unit 14 is placed on the both sides of goniometer 15 according to the angle that formula (1) is described.In hollow motor 19
Phase compensator 20 and analyzer 21 collectively constitute Polarization unit 22, vertical image-generating unit 18, Polarization unit
22 and planar array detector 23 be located at same light path on, be fixed on 24 on analyzing arm together with relay imaging unit 14.Face battle array is visited
The sensitive chip for surveying device 23 is located on the back focal plane of tube lens 17.
Computer 27 controls hollow motor 28 by controller 26 and hollow motor 19 drives phase compensator 29 respectively
With phase compensator 20 with certain rotating ratio synchronous rotary, conventional rotating ratio has 5:1、5:2 and 5:3.Operate simultaneously synchronous
The HOME position signal synchronous to catch two hollow motors of device 25, triggering planar array detector 23 carry out the collection of data and deposit
Storage.
In two kinds of instrument specific embodiments that the present invention is provided, described light source 1 can select xenon source, it is also possible to
From LASER Light Source.
In two kinds of instrument specific embodiments that the present invention is provided, described wavelength selector 2 can select monochromator, acousto-optic
The relevant device with wavelength selection function such as tunable filter or liquid crystal tunable filter.
In two kinds of instrument specific embodiments that the present invention is provided, the described polarizer 6 and analyzer 21 are to appoint
Meaning light beam is changed into the polarizer of the polarization state of line polarized light or detection light.
In two kinds of instrument specific embodiments that the present invention is provided, described phase compensator 20 and 28 is can be at two
The optics anisotropic device of certain phase-delay difference is produced in mutually perpendicular direction.
In two kinds of instrument specific embodiments that the present invention is provided, the high-NA image-forming objective lens 16 are unlimited distance light
Learn and design unstressed half apochromatism of flat field or unstressed flat field apochromat.
In two kinds of instrument specific embodiments that the present invention is provided, described planar array detector 23 can adopt CCD camera
Or CMOS cameras.
Nano structure membrane to be measured is measured using above-mentioned measurement apparatus to obtain its imaging spectral ellipsometry number
According to mainly including the following steps that：
1st step is placed in nano structure membrane to be measured 10 on specimen rotating holder 9；
2nd step conditioning instrumentation imaging optical path so that planar array detector 23 can obtain the blur-free imaging in sample region to be measured；
It is changed into monochromatic light, 3 He of monochromatic light Jing fiber couplers after the light Jing wavelength selectors 2 that 3rd step is sent from light source 1
Draw optical fiber 4 to be incorporated into and be polarized 8 one end of arm, after be changed into collimated light beam through collimating mirror 5, then enter through polarization state generation unit 7
Nano structure membrane to be measured 10 is incident to after the modulation of row polarization state；
4th step collimated light beam through 10 surface of nano structure membrane to be measured reflection after, successively through relay imaging unit 14
With vertical image-generating unit 18, then after Polarization unit 22 carries out polarization state demodulation, enter in planar array detector 23,
The image that planar array detector is collected is eventually transferred in computer 27.Computer is obtained according to the image that planar array detector is collected
To the corresponding light intensity signal of reflected light, polarization state generation unit is controlled by controller 26 and can be obtained with Polarization unit
The light intensity signal of reflected light under different polarization state；
The light intensity signal of the reflected light that the 5th step is obtained according to the 4th step, is calculated 10 corresponding surface of nano structure membrane to be measured
Measurement ellipsometric parameter on array detector 23 at each pixel, the corresponding measurement ellipsometric parameter of all pixels point are constituted and are entirely regarded
The imaging ellipsometry data of testing sample in field areas.
What the data acquisition principle on planar array detector at each pixel was just as, specifically can be detected with face battle array
As a example by data acquisition on device at any m rows and the n-th corresponding pixel of row.
For measurement apparatus shown in Fig. 4, its reflected beams Stokes Vector S corresponding with incident beamout, SinBetween
Relational expression be：
Sout=[MAR(θA)]·[R(-θC)MC(δ)R(θC)]·MS·[R(-θP)MP]·Sin (5)
Wherein MP、MA、MC(δ) and MSRespectively the polarizer 6, analyzer 21, phase compensator 20 and nanostructured to be measured are thin
10 corresponding Muller matrix of film；δ is the corresponding phase-delay quantity of phase compensator；It is α (α=θ that R (α) is the anglec of rotationP,θA,θC)
Rotation Muller matrix；θPAnd θARespectively (i.e. printing opacity direction of principal axis and the plane of incidence are pressed from both sides at the light transmission shaft azimuth of the polarizer and analyzer
Angle), θCPhase retardation (i.e. quick shaft direction and plane of incidence angle) for phase compensator, and θC=ω t-CS, ω be phase place mend
Repay the rotation angular frequency of device, CSRepresent the fast axle initial orientation angle of phase compensator.Expression formula (5) is launched to be reflected
The corresponding light intensity expression of light beam：
From expression formula (6), nano structure membrane to be measured corresponds to any m rows of planar array detector and the n-th row pixel
The light intensity signal that place collects is time dependent cyclical signal, therefore can carry out Fourier analysis, Er Qieyou to which
The harmonic constant of this light intensity signal for obtaining is the linear letter of correspondence parameter cos2 Ψ, sin2 Ψ cos Δs and sin2 Ψ sin Δs
Number.It follows that after the light intensity signal for collecting the reflected beams, by carrying out Fourier analyses to which, being believed by light intensity
Number harmonic constant can obtain the value of cos2 Ψ, sin2 Ψ cos Δs and sin2 Ψ sin Δs, it is possible to further try to achieve whole
Amplitude ratio angle Ψ (- 180 °≤Ψ≤180 °) and phase angle Δ (0 °≤Ψ≤90 °) in span.Visited by opposite battle array
The light intensity signal collected at survey device all pixels point carries out above-mentioned Fourier analysis and just can obtain in whole field of view
The imaging ellipsometry data of nano structure membrane to be measured.Additionally, except carrying out Fourier to each pixel on planar array detector
Outside leaf analysis, multiple pixels can also be carried out with Fourier analysis to improve the noise of the light intensity signal for collecting simultaneously
Than.
For measurement apparatus shown in Fig. 5, its reflected beams Stokes Vector S corresponding with incident beamout, SinBetween
Relational expression be：
Wherein MP, MA, MC1(δ1), MC2(δ2) and MSRespectively the polarizer 5, analyzer 21, polarization state generation unit phase place are mended
Repay device 28,10 corresponding Muller matrix of Polarization unit phase compensator 20 and nano structure membrane to be measured；δ1And δ2Respectively
For polarization state generation unit phase-delay quantity corresponding with Polarization unit phase compensator；It is α (α that R (α) is the anglec of rotation
=θP,θA,θC1,θC2) rotation Muller matrix；θPAnd θAThe respectively light transmission shaft azimuth of the polarizer and analyzer, θC1And θC2
The respectively phase retardation of polarization state generation unit and Polarization unit phase compensator, and θC1=ω1t-CS1, θC2
=ω2t-CS2, ω1And ω2For the rotation angular frequency of two phase compensators, CS1And CS2At the beginning of fast axle for two phase compensators
Beginning azimuth.Polarization state generation unit phase compensator and Polarization unit phase compensator in data acquisition
Fast axle is with certain rotating ratio ω1:ω2Synchronous rotary, conventional rotating ratio have 5:1、5:2 and 5:3.Formula (7) is launched to obtain
To the corresponding light intensity expression of the reflected beams：
Wherein ck=cos2(δk/ 2), sk=sin2(δk/ 2) and KiIt is intermediate variable, MijFor nano structure membrane to be measured
Corresponding Muller matrix MSIn element (i, j=1,2,3,4；K=1,2).
From time-domain expression (8) and (9) of light intensity signal, nano structure membrane correspondence planar array detector to be measured is taken up an official post
The light intensity signal collected at m rows and the n-th row pixel of anticipating is time dependent cyclical signal, therefore which can be entered
Row Fourier analysis, and the harmonic constant of thus obtained light intensity signal is the linear function of correspondence Muller matrix element.By
This understands, after the light intensity signal for collecting the reflected beams, by carrying out Fourier analysis to which, by the humorous of light intensity signal
Wave system number just can obtain the Muller matrix element of nano structure membrane to be measured at corresponding pixel points on planar array detector.By right
The light intensity signal collected at planar array detector all pixels point carries out above-mentioned Fourier analysis and can obtain whole visual field area
The imaging Muller matrix measurement data of nano structure membrane to be measured in domain.Additionally, for isotropism testing sample, its Muller square
Battle array should be in theory：
Reflectance of the wherein R for testing sample.Obviously, when testing sample is isotropism sample, survey using shown in Fig. 5
Amount device is after its Muller matrix is obtained, it is also possible to try to achieve its corresponding amplitude ratio angle Ψ and phase angle Δ.
6th step changes the wavelength X of incident beam using wavelength selector 2, is adjusted by goniometer 11 and is polarized arm 8 and analyzing
Inclination angle between arm 24 (is needed while adjusting relay imaging unit 14 by goniometer 15 with the incidence angle θ for changing incident beam
With the angle theta ' between 18 optical axis of vertical image-generating unit), rotate sample stage 9 to change incident beam with nano structure membrane to be measured
Between 10, institute is into azimuth φ；Repeat the 2nd step～the 5th step, can obtain different wave length, angle of incidence and azimuth configuration under into
As ellipsometry data.
(2) measurement data analysis
It is which is analyzed after the imaging spectral ellipsometry data for obtaining nano structure membrane to be measured, so as to
The ginsengs to be measured such as optical constant and thickness, nano structure live width, line height, the side wall angle of sample are extracted from measurement data
Number.Measurement data analysis is mainly included the following steps that：
It is corresponding that 7th step calculates nano structure membrane to be measured under the configuration of given wavelength X, incidence angle θ and azimuth φ
Theoretical imaging ellipsometric data；
The calculating of the corresponding theoretical imaging ellipsometric data of nano structure membrane to be measured, can be using not according to the characteristic of sample
Same computational methods.Specifically, when sample is thin film, directly can be calculated using fresnel formula；And work as sample
For nanostructured when, rigorous couple-wave analysis (RCWA), FInite Element (FEM), boundary element method (BEM) or limited can be adopted
FD-TD method (FDTD) etc. is calculated, below analytic explanation.
Fig. 6 is typical film samples, and it is the thin film on substrate.The complex refractivity index of wherein basal layer is
N2, the complex refractivity index of thin layer is N1, its thickness is d, N0For the refractive index of film sample surrounding medium.When surrounding medium is sky
During gas, N0=1.The definition of complex refractivity index N is refractive index and the extinction coefficient that N=n-ik, n and k are respectively medium, and i is imaginary number
Unit.Generally, optical constant N of thin layer1And its thickness d is parameter to be measured.In Fig. 6, θ0Expression angle of incidence (θ=
θ0), θ1For light beam from surrounding medium enter thin layer after refraction angle, θ2After basal layer being entered for light beam from thin layer
Refraction angle.According to snell law：
N0sinθ0=N1sinθ1=N2sinθ2 (11)
According to fresnel formula can in the hope of light beam at the thin layer upper surface p light (perpendicular to the electric field component of the plane of incidence)
Amplitude reflection coefficient r corresponding with s light (parallel to the electric field component of the plane of incidence)01,pAnd r01,s：
In the same manner, interface p light and s light of the light beam between thin layer and basal layer can also be tried to achieve according to fresnel formula
Corresponding amplitude reflection coefficient r12,pAnd r12,s：
After film sample reflection being incident in the hope of light beam according to formula (12)-(15), correspondence p light is corresponding with s light
Amplitude reflection coefficient rppAnd rss：
Wherein β=2 π dN1cosθ1/λ.Further can be in the hope of amplitude ratio angle Ψ and phase angle by formula (16) and (17)
Δ, i.e.,：
By the amplitude ratio angle Ψ and phase angle Δ that are tried to achieve, sample can further be tried to achieve according to formula (10) corresponding
Muller matrix M.
Fig. 7 is the typical cycle nanostructured in a photoetching process, calculates its corresponding Muller square from RCWA methods
Battle array M, main calculation procedure include：
I () is tried to achieve the electromagnetic field expressions of incidence zone and transmission area by Maxwell equation；
(ii) fourier expansion is carried out to the dielectric constant and electromagnetic field of grating region, then by Maxwell equation or
Helmholtz equation derives coupledwave equation group；
(iii) up-and-down boundary in grating region uses field boundary condition, just can be with by certain matrix operationss
Try to achieve the amplitude coefficient of at different levels diffracted waves.Cashier can further be calculated according to the amplitude coefficient of the Zero-order diffractive ripple tried to achieve
The Jones matrix J of rice optical grating construction：
Wherein the left and right sides of Jones matrix J represents reflection and the corresponding Jones's vector of incident polarization light beam, E respectivelyp,sPoint
The electric field component of the plane of incidence Biao Shi not be parallel and perpendicular to.When there is no fevering sodium effect in measurement process, corresponding Muller square
There is following relational expression between battle array M and Jones matrix J：
WhereinRepresent Kronecker product, J*For the complex-conjugate matrix of Jones matrix J, A-1For the inverse matrix of matrix A, matrix
A is：
The ellipse inclined survey of imaging spectral that 7th step calculated theoretical imaging spectral ellipsometric data and the 6th step are obtained by the 8th step
In amount data, each pixel or the corresponding Spectroscopic Ellipsometry measurement data of every group of pixel are matched, and therefrom extract correspondence
The parameter to be measured of the nano structure membrane at pixel.
Nano structure membrane parameter extraction process to be measured is a typical reverse temperature intensity process.The input of the inverse problem
For the imaging spectral ellipsometry data of nano structure membrane to be measured, the parameter value to be measured of nano structure membrane is output as.It is inverse to ask
The solution target of topic is that any pixel, can find one group of nano structure membrane in correspondence imaging spectral ellipsometry data
Parameter value to be measured so that the Spectroscopic Ellipsometry measurement data that its theoretical spectral ellipsometric data can be at the best match pixel.Still
By taking any m rows on planar array detector and the Spectroscopic Ellipsometry measurement data at the n-th row corresponding pixel points as an example, above-mentioned inverse problem is asked
Solution preocess mathematical linguisticss can be expressed as：
Wherein yex(λi, θ, φ) and represent i-th (i=1,2 ..., N) individual wavelength points λiUnder the conditions of incidence angle θ, azimuth φ
Corresponding ellipsometry data (can be amplitude ratio angle Ψ and phase angle Δ or Muller matrix element)；ycal(p,λi,θ,
Corresponding wavelength λ is represented φ)i, theoretical ellipsometric data under the conditions of incidence angle θ and azimuth φ, p is nano structure membrane ginseng to be measured
Array into K dimensional vectors, Ω be parameter value scope to be measured,For final parameter extraction value to be measured；δ y represent ellipsometry
The standard deviation of data；M is total data point number, when measurement parameter is amplitude ratio angle Ψ and phase angle Δ, M=2N, when
When measurement parameter is Muller matrix, M=15N.For the solution of formula (22), such as Levenberg- can be specifically adopted
The non-linear regression method of Marquardt algorithms etc, it would however also be possible to employ " a kind of to use disclosed in patent documentation CN102798342A
In the storehouse matching process based on error of fitting interpolation of optical scattering measurement ", or using Chen Xiuguo et al. in " Improved
measurement accuracy in optical scatterometry using correction-based library
" a kind of storehouse matching process based on amendment " proposed in search " papers.
To any pixel solution formula (22) in imaging spectral ellipsometry data, correspondence at the pixel can be obtained
Nano structure membrane parameter value to be measured.The parameter value to be measured of the corresponding nano structure membrane of all pixels point, finally constitutes
The three-dimensional microstructure of nano structure membrane to be measured in whole field of view.
The present invention is not limited in above-mentioned specific embodiment, and persons skilled in the art are according to disclosed by the invention interior
Hold, the present invention can be implemented using other various specific embodiments.Therefore, every design structure and think of using the present invention
Road, does some simple changes or the design changed, both falls within the scope of protection of the invention.
Claims (9)
1. a kind of nano structure membrane large area high-resolution wide visual field on-line measurement device, it is characterised in that including being polarized arm
(8) and analyzing arm (24) wherein：
Arm (8) and the analyzing arm (24) of being polarized is respectively with thin film planar normal to be measured into identical inclination angle theta；
The arm (8) that is polarized is coaxial with incident illumination, for external light source incident illumination is collimated, obtains collimated light beam, while
Polarization state modulation is carried out to incident illumination, obtains elliptically polarized light；
Analyzing arm (24) are located in film reflector light path to be measured, and which is by relay imaging unit (14), vertical image-generating unit
And Polarization unit (22) puts composition successively (18)；Wherein：
Relay imaging unit (14) put group by frontal lens (12) and rear lenses (13) according to optical axis coincidence, focal length conjugation
Into；Its front focus is overlapped with thin film center to be measured；
Vertical image-generating unit (18) are put by high-NA objective (16) and tube lens (17) common optical axis conjugation；Lens barrel
The back focal plane of lens (17), is provided with the sensitive chip of planar array detector (23), for realizing blur-free imaging；
Relay imaging unit (14) back focal length is conjugated with the front focal length of vertical image-generating unit (18), and optical axis between the two
Angle theta ' meets formulaWherein θ be external light source relative to thin film to be measured angle of incidence, f1And f2Respectively
The front focal plane focal length of the back focal plane focal length and rear lenses (13) of correspondence frontal lens (12)；Vertical image-generating unit (18) and polarization state point
Analysis unit (22) is put using common optical axis；So as to realize the wide visual field blur-free imaging and high resolution measurement of instrument；
Polarization unit (22) for carrying out Polarization to the light beam of vertical image-generating unit (18) outgoing, so as to
Measure the ellipsometric parameter of testing sample.
2. on-line measurement device as claimed in claim 1, it is characterised in that the arm that is polarized includes collimating lens (5) and partially
Polarization state generation unit PSG (7), both are arranged with optical axis, and the collimating lens are sent for collimating to outside light source incidence light
Enter the modulation that polarization state generation unit PSG (7) realizes polarization state.
3. on-line measurement device as claimed in claim 1, it is characterised in that polarization state generation unit PSG (7) include
Device (6), now corresponds to Polarization unit (22) and is made up of the phase compensator (20) and analyzer (21) that rotate partially.
4. on-line measurement device as claimed in claim 1, it is characterised in that polarization state generation unit PSG (7) are by being polarized
Phase compensator (28) composition of device (6) and rotation, now corresponds to Polarization unit and is made up of analyzer (21).
5. on-line measurement device as claimed in claim 1, it is characterised in that polarization state generation unit (7) by altogether sequentially
The polarizer, front ferroelectric liquid crystal devices, quarter wave plate and rear ferroelectric liquid crystal devices (4) composition that optical axis is arranged, now correspond to polarization state
Analytic unit (22) by ferroelectric liquid crystal devices (5), quarter wave plate (6), ferroelectric liquid crystal devices (7) and analyzer (8) common optical axis successively
Put；By controlling the voltage direction of 4 ferroelectric liquid crystal devices, 2 kinds of different conditions of ferroelectric phase and paraelectric phase are produced, so as to produce
The polarized light of 4 kinds of different polarization states, Jing Polarizations unit obtain all 16 units in the Muller matrix M of testing sample
Element.
6. on-line measurement device as claimed in claim 1, it is characterised in that polarization state generation unit (7) are by the polarizer
(6) and rotation phase compensator (28) composition, now correspond to Polarization unit by the phase compensator (20) for rotating and
Analyzer (21) is constituted, and the fast axle of phase compensator (28) and phase compensator (20) is with certain rotating ratio synchronous rotary；
Rotating ratio is preferably 5:1、5:2 and 5:3.
7. on-line measurement device as claimed in claim 1, it is characterised in that the external light source includes light source (1), wavelength choosing
Select device (2), fiber coupler (3) and output optical fibre (4)；Light Jing wavelength selectors (2) that light source (1) is produced is changed into Single wavelength
Light, Jing fiber couplers (3) send output optical fibre (4), outfan of the output optical fibre (4) for external light source.
8. as claimed in claim 4 any one on-line measurement device, it is characterised in that also including control system, the control system
System is connected with synchronous setting, and the synchronizer is polarized in arm (8) in the first hollow motor (29) and analyzing arm (24) with being located at
Second hollow motor (19) is connected, for controlling the phase compensator in two-arm with certain rotating ratio synchronous rotary, Jin Ershi
The modulation and demodulation of existing polarization state.
9. a kind of nano structure membrane large area high-resolution wide visual field On-line Measuring Method, it is characterised in that including following step
Suddenly：
(1) nano structure membrane to be measured is placed on sample stage；
(2) imaging optical path is adjusted, obtains the blur-free imaging in sample region to be measured on planar array detector；
(3) by Single wavelength collimated light beam after polarization state generation unit is modulated, acquisition elliptically polarized light is projected to be measured
Nano structure membrane surface；
(4) nano structure membrane surface reflection to be measured is carried out, after polarization state demodulation, entering in planar array detector, obtaining not
With reflective light intensity signal under polarization state；
(5) the reflective light intensity signal obtained according to (4th) step, is calculated on nano structure membrane correspondence planar array detector to be measured
Measurement ellipsometric parameter at each pixel, the corresponding measurement ellipsometric parameter of all pixels point constitute to be measured in whole field of view
The imaging ellipsometry data of sample.
(6) change the wavelength X of incident beam and the incidence angle θ of incident beam, rotate sample stage to change incident beam and treat
Between survey nano structure membrane, institute is into azimuth φ；Repeat (2nd) step～the (5) step, different wave length, incidence can be calculated
Actual imaging ellipsometric data under angle and azimuth configuration；
(7) under the configuration of given wavelength X, incidence angle θ and azimuth φ, calculate nano structure membrane to be measured it is corresponding it is theoretical into
As ellipsometric data；When sample is thin film, calculated using fresnel formula；When sample is nanostructured, using strict
Coupled Wave Analysis (RCWA), FInite Element (FEM), boundary element method (BEM) or finite time-domain calculus of finite differences (FDTD) are calculated；
(8) calculate to actually measuring any pixel on the imaging spectral ellipsometric data for obtaining, the pixel can be obtained
Locate the parameter value to be measured of corresponding nanostructured；The parameter value to be measured for completing the corresponding nanostructured of all pixels point is solved, most
The three-dimensional microstructure of nanostructured to be measured in whole field of view is obtained eventually.
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| US11644413B2 (en) | 2019-08-26 | 2023-05-09 | Huazhong University Of Science And Technology | Method for measuring dielectric tensor of material |
| CN110596011A (en) * | 2019-08-26 | 2019-12-20 | 华中科技大学 | Method for measuring dielectric tensor of material |
| US11428630B2 (en) * | 2019-12-02 | 2022-08-30 | Nankai University | System and method for determining second order nonlinear susceptibility of material |
| CN111799189A (en) * | 2020-07-11 | 2020-10-20 | 天津大学 | Online optical measurement system and method for influence of rotation centrifugal quantity on crystalline state of spin-coated film |
| CN112540044A (en) * | 2020-07-14 | 2021-03-23 | 深圳中科飞测科技股份有限公司 | Elliptical polarization measuring equipment and focusing method and measuring method thereof |
| CN112362592A (en) * | 2020-10-30 | 2021-02-12 | 华中科技大学 | Polarization reflection measurement system and detection method thereof |
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