CN106507948B - Semiconductor film material low-temperature resistivity test equipment - Google Patents
Semiconductor film material low-temperature resistivity test equipmentInfo
- Publication number
- CN106507948B CN106507948B CN201110010927.XA CN201110010927A CN106507948B CN 106507948 B CN106507948 B CN 106507948B CN 201110010927 A CN201110010927 A CN 201110010927A CN 106507948 B CN106507948 B CN 106507948B
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- CN
- China
- Prior art keywords
- semiconductor film
- test equipment
- film material
- pedestal
- resistivity test
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- Measurement Of Resistance Or Impedance (AREA)
Abstract
The invention belongs to semi-conducting material measuring technology; it is related to a kind of semiconductor film material low-temperature resistivity test equipment, which includes pedestal, thermometric diode, support, pipe box, O-ring seal, seal nipple, data line, protection pipe and A/D converter, computer system and constant-current source.Wherein, whole pedestal includes that sample is fixed in support; and sealed by O-ring seal; the thermometric diode is arranged on the pedestal back side; the pipe box is set on outside support, in addition, the holding wire being made up of shielded conductor and data line end count sealing joint that connect on the thermometric diode are drawn and constrained in protection pipe; constant-current source is connected to, while computer system is connected to after A/D converter.Semiconductor film material low-temperature resistivity test equipment simple structure of the present invention, easy to operate, cost are relatively low.Can realize that easily real time resistance rate real-time curve is drawn, and measuring accuracy is high, its temperature control precision is not less than 0.1 DEG C.
Description
Technical field
The invention belongs to semi-conducting material measuring technology, it is related to a kind of semiconductor film material low temperature
Resistivity measurement equipment.
Background technology
Semi-conducting material low temperature attribute test is the important hand that semiconductor material performance is characterized
Section.Many semi-conducting materials can show peculiar attribute at low temperature, or material many
Important performance characteristic can be improved significantly at low temperature, and exactly these advantages are greatly facilitated
The development of cryogenic technique.
There are equipment such as OXFORD, Agilent of correlation in many instrument production companies both at home and abroad.
Typical low temperature property measurement equipment has the PPMS of Quantum Design companies of the U.S..But,
Prior art low-temperature resistivity test equipment is using compressor cooling mostly, can provide 4.2K
Low temperature, but the equal cost of these equipment is higher, operates more complicated, the sample test cycle
It is longer.
The content of the invention
The purpose of the present invention is：There is provided a kind of simplicity, low cost, measuring accuracy high semiconductor
Thin-film material low-temperature resistivity test equipment.
The technical scheme is that：A kind of semiconductor film material low-temperature resistivity test is set
It is standby, including pedestal, thermometric diode, support, pipe sleeve, O-ring seal, seal nipple, number
According to transmission line, protection pipe and A/D converter, computer system and constant-current source, wherein, use
It is fixed in the pedestal for placing testing sample including sample in support, and it is close by O-ring seal
Envelope, the thermometric diode is arranged on the pedestal back side, and the pipe sleeve is set on outside support, separately
Outside, the signal wire and data line that are made up of shielded conductor connected on the thermometric diode
Sealed joint is drawn and constrained in protection pipe, is connected to for providing electric current letter to sample
Number constant-current source, while being connected to computer system after A/D converter.
The pedestal is made of the high metal material of thermal conductivity.
The O-ring seal is made up of polytetrafluoro material.
The protection pipe is stainless steel tube, and pipe sleeve is stainless steel pipe sleeve.
The material good for the thermal conductivity that sample is bonded in pedestal sample stage surface is thermal conductive silicon
Fat.
Cannula end is milled with two symmetrical planes.
It is an advantage of the invention that：Semiconductor film material low-temperature resistivity test equipment knot of the present invention
Structure is simple and convenient to operate, cost is relatively low.Easily real time resistance rate real-time curve can be realized
Draw, and measuring accuracy is high, especially with effectively shielding measure thus can very day of one's doom
That spends reduces noise, and its temperature control precision is not more than 0.1 DEG C, therefore with larger reality
Border application value.
Brief description of the drawings
Fig. 1 is the better embodiment of semiconductor film material low-temperature resistivity test equipment one of the present invention
Structural representation,
Wherein, 1- samples, 2- pedestals, 3- thermometrics diode, 4- supports, 5- stainless steels pipe sleeve,
6- polytetrafluoros cushion rubber, 7- seal nipples, 8- data transmission cables, 9- stainless steel tubes, 10- Du
Crock, 11-A/D converters, 12- computer systems, 13- constant-current sources.
Embodiment
Below by specific embodiment, the present invention is described further：
Referring to Fig. 1, it is semiconductor film material low-temperature resistivity test equipment one of the present invention
The structural representation of better embodiment.In present embodiment, the semiconductor film material is low
Warm resistivity measurement equipment includes pedestal 2, thermometric diode 3, support 4, pipe sleeve 5, sealing
Cushion rubber 6, seal nipple 7, data line 8, protection pipe 9 and A/D converter 11,
Computer system 12 and constant-current source 13.Wherein, the pedestal 2 is used to place testing sample 1,
Its metal material for using thermal conductivity high is made, and whole pedestal 2 is fixed on branch including sample 1
In frame 4, and the O-ring seal 6 being made up of polytetrafluoro material is sealed.Pedestal 2 is a thickness
About 4 millimeters and the U-shaped metallic plate of back side cutting, the plane of pedestal 2 are used to place upwards
It is used to place thermometric diode 3 in sample, back side groove, the thermometric diode 3 is close to
The back side of pedestal 2, and with pedestal keep it is good thermally contact, to ensure the accuracy of thermometric.Institute
Pipe sleeve 5 is stated for stainless steel pipe sleeve, it is set in outside support so that whole pedestal include sample with
And support 4 is protected in pipe sleeve 5, and the end of sleeve pipe 5 is milled with two symmetrical planes,
Dismounted with aspect.
In addition, the signal wire sum being made up of shielded conductor connected on the thermometric diode 3
Draw and constrain in an elongated protection pipe 9, this implementation according to the sealed joint of transmission line 8
In mode, the protection pipe 9 is stainless steel tube.The data wire drawn by protection pipe 9 is connected to
Computer system 12 is output to after A/D converter 11 and carries out data processing, while protection pipe 9
The signal wire of extraction is connected to the constant-current source 13 for providing current signal to sample.
During actual progress low-temperature test, testing sample 1 is sticked to a kind of good material of thermal conductivity
It is partially submerged to below the liquid level of Dewar tank 10 below whole equipment end on sample base 2
Carry out temperature-fall period.The data of collection are connected to department of computer science by high-speed a/d converter 11
On system 12, then carry out visualizing detection and data processing in real time with LABVIEW program softwares.
Semiconductor film material low-temperature resistivity test equipment of the present invention is made furtherly below
It is bright：
1. sealing and lead are realized with seal nipple between sample base and Can,
2. sample base uses the high metal of thermal conductivity to make reaches that test is required to reduce sample
The time of low temperature and final temperature error.
3. in present embodiment, the thermal conductivity for sample to be bonded in pedestal sample stage surface is good
Material be heat-conducting silicone grease, to realize heat transfer good between sample and pedestal, be equally for
Sample is reduced to reach the time of low temperature and reduce final temperature error.
4. all data acquisition lines use shielding line, the pipe fitting such as pipe sleeve and protection pipe is using stainless
Steel material, to reduce the interference of outer bound pair ultra-weak electronic signal.
5. the voltage signal temperature and electric current that read pass through data collecting card synchronous acquisition and integrated
Data processing and Drawing of Curve are carried out to computer.
Only need to be by pedestal and the submergence of small part stainless steel pipes as in liquid nitrogen during operation, it is possible to real
Pedestal, is placed in more than liquid level at room temperature freely by the resistivity measurement of existing temperature-fall period after finishing
Heating.Due to the resistivity of semi-conducting material be with temperature change, therefore can pass through read
The voltage signal gone out derives the resistivity of the material, by monitoring heating-cooling process in real time
Voltage change measure the resistivity variation with temperature curve of semi-conducting material so that simply
The convenient accurate measurement realized to the low-temperature resistance of low temperature to 77K, actual experiment shows, warm
Degree control accuracy is not more than 0.1 DEG C.
In summary semiconductor film material low-temperature resistivity test equipment of the present invention it is easy to operate,
Cost is relatively low.Can realize real time resistance rate real-time curve draw, otherwise interfere with noise it is low, survey
Try high precision, especially with effectively shielding measure thus reducing for limits can make an uproar very much
Sound, its temperature control precision is not more than 0.1 DEG C, therefore with larger actual application value.
Claims (6)
1. a kind of semiconductor film material low-temperature resistivity test equipment, it is characterised in that：Including base
Seat [2], thermometric diode [3], support [4], pipe sleeve [5], O-ring seal [6], seal nipple [7],
Data line [8], protection pipe [9] and A/D converter [11], computer system [12] and perseverance
Stream source [13], wherein, the pedestal [2] for placing testing sample [1] is fixed on including sample [1]
In support [4], and sealed by O-ring seal [6], the thermometric diode [3] is arranged on pedestal [2]
The back side, the pipe sleeve [5] is set on outside support, in addition, being connected on the thermometric diode [3]
The signal wire being made up of shielded conductor and data line [8] sealed joint draw and constrain in
In protection pipe [9], the constant-current source [13] for providing current signal to sample is connected to, while through
Computer system [12] is connected to after A/D converter [11].
2. semiconductor film material low-temperature resistivity test equipment according to claim 1, its
It is characterised by：The pedestal [2] is made of the high metal material of thermal conductivity.
3. semiconductor film material low-temperature resistivity test equipment according to claim 2, its
It is characterised by：The O-ring seal [6] is made up of polytetrafluoro material.
4. semiconductor film material low-temperature resistivity test equipment according to claim 3, its
It is characterised by：The protection pipe [9] is stainless steel tube, and pipe sleeve is stainless steel pipe sleeve.
5. semiconductor film material low-temperature resistivity test equipment according to claim 4, its
It is characterised by：The material good for the thermal conductivity that sample is bonded in pedestal [2] sample stage surface is to lead
Hot silicone grease.
6. semiconductor film material low-temperature resistivity test equipment according to claim 5, its
It is characterised by：Sleeve pipe [5] end is milled with two symmetrical planes.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110010927.XA CN106507948B (en) | 2011-04-22 | 2011-04-22 | Semiconductor film material low-temperature resistivity test equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110010927.XA CN106507948B (en) | 2011-04-22 | 2011-04-22 | Semiconductor film material low-temperature resistivity test equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106507948B true CN106507948B (en) | 2014-03-05 |
Family
ID=58359106
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201110010927.XA Active CN106507948B (en) | 2011-04-22 | 2011-04-22 | Semiconductor film material low-temperature resistivity test equipment |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106507948B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109870486A (en) * | 2019-03-21 | 2019-06-11 | 中国地震局地震研究所 | The experimental provision of suiperconducting transition occurs for a kind of observation superconductor |
-
2011
- 2011-04-22 CN CN201110010927.XA patent/CN106507948B/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109870486A (en) * | 2019-03-21 | 2019-06-11 | 中国地震局地震研究所 | The experimental provision of suiperconducting transition occurs for a kind of observation superconductor |
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Legal Events
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| GR03 | Grant of secret patent right | ||
| GR03 | Grant of secret patent right | ||
| DC01 | Secret patent status has been lifted | ||
| DCSP | Declassification of secret patent |