CN106505074A - A kind of manufacture method of imageing sensor - Google Patents
A kind of manufacture method of imageing sensor Download PDFInfo
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- CN106505074A CN106505074A CN201611044952.9A CN201611044952A CN106505074A CN 106505074 A CN106505074 A CN 106505074A CN 201611044952 A CN201611044952 A CN 201611044952A CN 106505074 A CN106505074 A CN 106505074A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 18
- 238000000034 method Methods 0.000 title claims abstract description 18
- 239000000758 substrate Substances 0.000 claims abstract description 126
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 38
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 38
- 239000010703 silicon Substances 0.000 claims abstract description 38
- RIVZIMVWRDTIOQ-UHFFFAOYSA-N cobalt iron Chemical compound [Fe].[Co].[Co].[Co] RIVZIMVWRDTIOQ-UHFFFAOYSA-N 0.000 claims abstract description 13
- 229920005989 resin Polymers 0.000 claims description 45
- 239000011347 resin Substances 0.000 claims description 45
- 238000005286 illumination Methods 0.000 claims description 4
- 239000004593 Epoxy Substances 0.000 claims description 3
- 239000000956 alloy Substances 0.000 claims 1
- 229910045601 alloy Inorganic materials 0.000 claims 1
- 239000007787 solid Substances 0.000 claims 1
- 230000003287 optical effect Effects 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 239000005357 flat glass Substances 0.000 description 2
- 239000003292 glue Substances 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 238000004382 potting Methods 0.000 description 2
- 239000000741 silica gel Substances 0.000 description 2
- 229910002027 silica gel Inorganic materials 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 150000002632 lipids Chemical class 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14685—Process for coatings or optical elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/552—Protection against radiation, e.g. light or electromagnetic waves
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14623—Optical shielding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14636—Interconnect structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
Abstract
The invention provides a kind of manufacture method of imageing sensor, including：（1）The first substrate is provided, first substrate includes the front with the first light receiving area and the back side with the vis-a-vis；（2）Silicon substrate is provided, the silicon substrate includes having reeded front and the back side with the vis-a-vis；（3）The back side of first substrate is bonded by one layer of ferrocobalt layer with the front of the silicon substrate；（4）Second substrate is provided, is arranged at the bottom portion of groove, second substrate includes the front with the second light receiving area and the back side with the vis-a-vis, and the front of second substrate is coplanar with the back side of the silicon substrate.
Description
Technical field
The present invention relates to the sensor field of sensitive components, and in particular to a kind of manufacturer of anti-interference imageing sensor
Method.
Background technology
In light sensor, simplest electronic device is photoconductive resistance, and it can sense the light and shade change of light, export micro-
The weak signal of telecommunication, by simple electronic circuit processing and amplifying, can control the automatic switch of LED lamp.Therefore automatically controlling,
It is widely used in household electrical appliance, for long-range lighting, for example：Make automatic brightness adjustment in a television set, shine
Phase machine makees automatic exposure；In addition, in the automatic control circuits such as street lamp, navigation mark, winding automatic stop arrangement and burglar alarm
Deng
Light sensor is one of modal sensor, and its species is various, mainly has：Photocell, photomultiplier tube, photosensitive
Resistance, phototriode, solaode, light sensor, UV sensor, optical fiber type photoelectric sensor, color sensing
Device, CCD and cmos image sensor etc..There are OTRON brands etc. in domestic leading firm.Optical sensor is that current production rate is most, answers
With one of most wide sensor, it is automatically controlling and is occupying very important status in non-electrical quantity measurement technology.Simplest
Light sensor is photoconductive resistance, when photon impact joint will produce electric current.
Fig. 1 is a kind of structural representation of common imageing sensor, and which includes the substrate 12 with light receiving area 11,
There is around light receiving area distance piece 14（Spacer）, packaged glass plate 13 is fixed on distance piece 14 by tack coat.The biography
Sensor can only be sensed to the light in front, and the light at its back side cannot be sensed, and limit the range of application of sensor.
As super large-scale integration is gradually stepped up to high integration and high performance demand, the two-sided sense of sensor how is realized
Survey, and ensure that the minimum interference between the compact in size and sensor of sensor is that those skilled in the art are urgently to be resolved hurrily
Problem.
Content of the invention
It is based on and solves the above problems, the invention provides a kind of manufacture method of imageing sensor, including：
（1）First substrate is provided, first substrate include the front with the first light receiving area and with the vis-a-vis
The back side；
（2）Silicon substrate is provided, the silicon substrate includes having reeded front and the back side with the vis-a-vis；
（3）The back side of first substrate is bonded by one layer of ferrocobalt layer with the front of the silicon substrate；
（4）Second substrate is provided, is arranged at the bottom portion of groove, second substrate includes the front with the second light receiving area
And the back side with the vis-a-vis, the front of second substrate is coplanar with the back side of the silicon substrate.
Embodiments in accordance with the present invention, also include step（5）：Pass through the first photosensitive tree on the front of first substrate
Lipid layer bonds the first smooth filter plate.
Embodiments in accordance with the present invention, also include step（6）：At the front of second substrate and the back side of the first substrate
The second photosensitive resin layer of upper setting.
Embodiments in accordance with the present invention, also include step（7）：First and second photosensitive resin layer described in illumination curing.
Embodiments in accordance with the present invention, also include step（8）：Make the first conductive through hole and the second conductive through hole, first
Multiple first pads that conductive through hole is connected electrically on the front of first substrate simultaneously sequentially pass through first substrate, ferrum cobalt
Alloy-layer, silicon substrate and the second photosensitive resin layer, the second conductive through hole are connected electrically in multiple on the front of second substrate
Second pad simultaneously passes through second photosensitive resin layer.
Embodiments in accordance with the present invention, also include step（9）：First conductive through hole and the second conductive through hole are passed through
Soldered ball is electrically connected with the conductive pattern of the second smooth filter plate, and is filled thoroughly between the second photosensitive resin layer and the second smooth filter plate
Bright packed layer.
Embodiments in accordance with the present invention, also include step（9’）：Will be conductive with described second for first conductive through hole logical
After hole first electrically connects, then electrically connected with the conductive pattern of the described second smooth filter plate by soldered ball.
Embodiments in accordance with the present invention, also include making the 3rd conductive through hole, wherein, first conductive through hole with described
Second conductive through hole is electrically connected by the 3rd conductive through hole extended laterally in the second photosensitive resin layer.
Embodiments in accordance with the present invention, first photosensitive resin layer and the second photosensitive resin layer are photoimageable epoxy.
Embodiments in accordance with the present invention, second substrate are fixed on the bottom portion of groove by adhesive glue.
Filled with potting resin with the side of circular second substrate in embodiments in accordance with the present invention, the groove.
Technical scheme, has the advantage that：
（1）After the pad of upper and lower two substrates is electrically connected by through hole, through horizontal through hole by two longitudinal hole electricity
Connection, due to the second photosensitive resin layer very thin, it is ensured that the ability of the receiving light of the second light receiving area, it is to avoid hidden by soldered ball
Gear；
（2）There is on second smooth optical filter conductive pattern, the effect of existing optical filtering protection to also serve as electrically-conductive backing plate, it is ensured that slim
Change, eliminate circuit board；
（3）Ferrocobalt layer can be spaced the first substrate and the second substrate, prevent the electromagnetic interference of the sensor of both sides, can be with
Device bonding in both sides is got up.
Description of the drawings
Profiles of the Fig. 1 for the imageing sensor of prior art；
Profiles of the Fig. 2 for the imageing sensor of first embodiment of the invention；
Profiles of the Fig. 3 for the imageing sensor of second embodiment of the invention；
Schematic flow sheets of the Fig. 4-8 for the manufacture method of the imageing sensor of the present invention.
Specific embodiment
First embodiment
Referring to Fig. 2, a kind of anti-interference imageing sensor 2, including：
First substrate 21a, which can be silicon substrate, be formed on electronic component（Light receiving area）, the first substrate 21a bags
Include the front with the first light receiving area 22a and the back side with the vis-a-vis；
Silicon substrate 31, the silicon substrate 31 include the front with groove 25 and the back side with the vis-a-vis, the groove
25 depth are little, the thickness of the silicon substrate 31；
Second substrate 21b, is arranged at 25 bottom of the groove, and the second substrate 21b is included with the second light receiving area 22b's
Front and the back side with the vis-a-vis, the front of the second substrate 21b are coplanar with the back side of the silicon substrate 31, described
25 bottom of groove should be away from the first light receiving area 22a；
The back side of the first substrate 21a is bonded by one layer of ferrocobalt layer 33 with the front of the silicon substrate 31.
There is on the front of the first substrate 21a the first smooth filter plate by the first photosensitive resin layer 28a bondings
24a, the first smooth filter plate 24a can be the sheet glass with light cut film.
Have on the back side of the front of the second substrate 21b and the first substrate 21a and pass through the second photosensitive resin layer
28b, the second smooth filter plate 24b of the bonding of transparent packed layer 29, the transparent packed layer can be transparent silica gel or epoxy resin.
There are multiple first pad 23a on the front of the first substrate 21a, in the front of the second substrate 21b
Upper have multiple second pad 23b.
Also include electrically connecting the first pad 23a, sequentially pass through the first substrate 21a, ferrocobalt layer 33, silicon
Substrate 31 and the first conductive through hole 27a of the second photosensitive resin layer 28b, and electrically connect the second pad 23b, pass through institute
The second conductive through hole 27b of the second photosensitive resin layer 28b is stated, the first conductive through hole 27a is wrapped with insulating medium layer 32
Wrap up in the through-hole structure of conductive material.
The first conductive through hole 27a and the second conductive through hole 27b pass through the first soldered ball 30a and the second soldered ball 30b respectively
The conductive pattern of filter plate 24b smooth with described second is electrically connected.
According to the embodiment, the first photosensitive resin layer 28a and the second photosensitive resin layer 28b is photoimageable epoxy.
According to the embodiment, the second substrate 21b is fixed on 25 bottom of the groove by adhesive glue 26.
According to the embodiment, filled with potting resin with the side of the circular second substrate 21b in the groove 25.
Present invention thus provides a kind of manufacture method of sensor, comprises the following steps：
（1）Referring to Fig. 4, there is provided the first substrate, first substrate include the front with the first light receiving area and with described just
The relative back side in face；
（2）Silicon substrate is provided, the silicon substrate includes having reeded front and the back side with the vis-a-vis；
（3）The back side of first substrate is bonded by one layer of ferrocobalt layer with the front of the silicon substrate；
（4）Referring to Fig. 5, there is provided the second substrate, the bottom portion of groove is arranged at, second substrate is included with the second light-receiving
The front in area and the back side with the vis-a-vis, the front of second substrate are coplanar with the back side of the silicon substrate.
（5）Referring to Fig. 6, the first smooth filter plate is bonded by the first photosensitive resin layer on the front of first substrate.
（6）On the back side of the front of second substrate and the first substrate, the second photosensitive resin layer is set.
（7）First and second photosensitive resin layer described in illumination curing.
（8）Referring to Fig. 7, the first conductive through hole and the second conductive through hole is made, the first conductive through hole is connected electrically in described the
Multiple first pads on the front of one substrate simultaneously sequentially pass through first substrate, ferrocobalt layer, silicon substrate and the second sense
Photopolymer resin layer, the second conductive through hole are connected electrically in multiple second pads on the front of second substrate and pass through described second
Photosensitive resin layer.
（9）Referring to Fig. 8, by first conductive through hole and the second conductive through hole leading by soldered ball and the second smooth filter plate
Electrical pattern is electrically connected, and between the second photosensitive resin layer and the second smooth filter plate fills transparent packed layer.
Second embodiment
Referring to Fig. 3, a kind of anti-interference imageing sensor 3, including：
First substrate 21a, which can be silicon substrate, be formed on electronic component（Light receiving area）, the first substrate 21a bags
Include the front with the first light receiving area 22a and the back side with the vis-a-vis；
Silicon substrate 31, the silicon substrate 31 include the front with groove 25 and the back side with the vis-a-vis, the groove
25 depth are little, the thickness of the silicon substrate 31；
Second substrate 21b, is arranged at 25 bottom of the groove, and the second substrate 21b is included with the second light receiving area 22b's
Front and the back side with the vis-a-vis, the front of the second substrate 21b are coplanar with the back side of the silicon substrate 31, described
25 bottom of groove should be away from the first light receiving area 22a；
The back side of the first substrate 21a is bonded by one layer of ferrocobalt layer 33 with the front of the silicon substrate 31.
There is on the front of the first substrate 21a the first smooth filter plate by the first photosensitive resin layer 28a bondings
24a, the first smooth filter plate 24a can be the sheet glass with light cut film.
Have on the back side of the front of the second substrate 21b and the first substrate 21a and pass through the second photosensitive resin layer
28b, the second smooth filter plate 24b of the bonding of transparent packed layer 29, the transparent packed layer can be transparent silica gel or epoxy resin.
There are multiple first pad 23a on the front of the first substrate 21a, in the front of the second substrate 21b
Upper have multiple second pad 23b.
Also include electrically connecting the first pad 23a, sequentially pass through the first substrate 21a, ferrocobalt layer 33, silicon
Substrate 31 and the first conductive through hole 27a of the second photosensitive resin layer 28b, and electrically connect the second pad 23b, pass through institute
The second conductive through hole 27b of the second photosensitive resin layer 28b is stated, the first conductive through hole 27a is wrapped with insulating medium layer 32
Wrap up in the through-hole structure of conductive material.The first conductive through hole 27a in the second conductive through hole 27b and the outside of groove 25,
The first conductive through hole 27a and the second conductive through hole 27b is by extending laterally in the second photosensitive resin layer 28b
The 3rd conductive through hole 27c electrical connection.Again by the soldered ball 30 and the described second smooth filter plate below the first conductive through hole 27a
The conductive pattern electrical connection of 24b.
After the pad of upper and lower two substrates is electrically connected by through hole, through horizontal through hole by two longitudinal hole electricity
Connection, due to the second photosensitive resin layer very thin, it is ensured that the ability of the receiving light of the second light receiving area, it is to avoid hidden by soldered ball
Gear.
Present invention thus provides the manufacture method of another kind of sensor, comprises the following steps：
（1）Referring to Fig. 4, there is provided the first substrate, first substrate include the front with the first light receiving area and with described just
The relative back side in face；
（2）Silicon substrate is provided, the silicon substrate includes having reeded front and the back side with the vis-a-vis；
（3）, the back side of first substrate is bonded by one layer of ferrocobalt layer with the front of the silicon substrate；
（4）The second substrate is provided referring to Fig. 5, the bottom portion of groove is arranged at, second substrate is included with the second light-receiving
The front in area and the back side with the vis-a-vis, the front of second substrate are coplanar with the back side of the silicon substrate.
（5）Referring to Fig. 6, the first smooth filter plate is bonded by the first photosensitive resin layer on the front of first substrate.
（6）On the back side of the front of second substrate and the first substrate, the second photosensitive resin layer is set.
（7）First and second photosensitive resin layer described in illumination curing.
（8）Referring to Fig. 7, the first conductive through hole and the second conductive through hole is made, the first conductive through hole is connected electrically in described the
Multiple first pads on the front of one substrate simultaneously sequentially pass through first substrate, ferrocobalt layer, silicon substrate and the second sense
Photopolymer resin layer, the second conductive through hole are connected electrically in multiple second pads on the front of second substrate and pass through described second
Photosensitive resin layer.
（9）Referring to Fig. 3, in the second photosensitive resin layer make the 3rd conductive through hole, wherein, first conductive through hole with
Second conductive through hole is electrically connected by the 3rd conductive through hole extended laterally in the second photosensitive resin layer；By described first
After conductive through hole is first electrically connected with second conductive through hole then electric with the conductive pattern of the described second smooth filter plate by soldered ball
Even.
Finally it should be noted that：Obviously, above-described embodiment is only intended to clearly illustrate example of the present invention, and simultaneously
The non-restriction to embodiment.For those of ordinary skill in the field, can also do on the basis of the above description
Go out the change or variation of other multi-forms.There is no need to be exhaustive to all of embodiment.And thus drawn
Obvious change or change among still in protection scope of the present invention that Shen goes out.
Claims (10)
1. a kind of manufacture method of imageing sensor, including：
（1）First substrate is provided, first substrate include the front with the first light receiving area and with the vis-a-vis
The back side；
（2）Silicon substrate is provided, the silicon substrate includes having reeded front and the back side with the vis-a-vis；
（3）The back side of first substrate is bonded by one layer of ferrocobalt layer with the front of the silicon substrate；
（4）Second substrate is provided, is arranged at the bottom portion of groove, second substrate includes the front with the second light receiving area
And the back side with the vis-a-vis, the front of second substrate is coplanar with the back side of the silicon substrate.
2. the manufacture method of imageing sensor according to claim 1, it is characterised in that also include step（5）：Described
The first smooth filter plate is bonded by the first photosensitive resin layer on the front of the first substrate.
3. the manufacture method of imageing sensor according to claim 2, it is characterised in that also include step（6）：Described
Second photosensitive resin layer is set on the back side of the front of the second substrate and the first substrate.
4. the manufacture method of imageing sensor according to claim 3, it is characterised in that also include step（7）：Illumination is solid
Change first and second photosensitive resin layer.
5. the manufacture method of imageing sensor according to claim 4, it is characterised in that also include step（8）：Make the
One conductive through hole and the second conductive through hole, the first conductive through hole are connected electrically in multiple first welderings on the front of first substrate
Disk simultaneously sequentially passes through first substrate, ferrocobalt layer, silicon substrate and the second photosensitive resin layer, and the second conductive through hole is electrically connected
Multiple second pads on the front of second substrate simultaneously pass through second photosensitive resin layer.
6. the manufacture method of imageing sensor according to claim 5, it is characterised in that also include step（9）：Will be described
First conductive through hole and the second conductive through hole are electrically connected with the conductive pattern of the second smooth filter plate by soldered ball, and photosensitive second
Transparent packed layer is filled between resin bed and the second smooth filter plate.
7. the manufacture method of imageing sensor according to claim 5, it is characterised in that also include step（9’）：By institute
State after the first conductive through hole first electrically connected with second conductive through hole, then by soldered ball and the conduction of the described second smooth filter plate
Pattern is electrically connected.
8. the manufacture method of imageing sensor according to claim 7, it is characterised in that also include making the 3rd conductive logical
Hole, wherein, first conductive through hole and second conductive through hole by extend laterally in the second photosensitive resin layer the
Three conductive through holes are electrically connected.
9. the manufacture method of imageing sensor according to claim 1, it is characterised in that first photosensitive resin layer and
Second photosensitive resin layer is photoimageable epoxy.
10. the manufacture method of imageing sensor according to claim 1, it is characterised in that second substrate is by viscous
Rubber alloy is fixed on the bottom portion of groove.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611044952.9A CN106505074A (en) | 2016-11-24 | 2016-11-24 | A kind of manufacture method of imageing sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611044952.9A CN106505074A (en) | 2016-11-24 | 2016-11-24 | A kind of manufacture method of imageing sensor |
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| Publication Number | Publication Date |
|---|---|
| CN106505074A true CN106505074A (en) | 2017-03-15 |
Family
ID=58328396
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|---|---|---|---|
| CN201611044952.9A Pending CN106505074A (en) | 2016-11-24 | 2016-11-24 | A kind of manufacture method of imageing sensor |
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|---|---|---|---|---|
| JP2005259828A (en) * | 2004-03-10 | 2005-09-22 | Sony Corp | Solid state imaging device and its manufacturing method |
| US20050262941A1 (en) * | 2004-06-01 | 2005-12-01 | Samsung Electronics Co., Ltd. | Gyro-sensor comprising a plurality of component units, and fabricating method thereof |
| CN103066081A (en) * | 2011-09-16 | 2013-04-24 | 全视科技有限公司 | Dual-facing camera assembly |
| CN103392389A (en) * | 2011-02-25 | 2013-11-13 | 加川清二 | Near-field-noise-suppressing sheet |
| CN103996672A (en) * | 2010-11-18 | 2014-08-20 | 日东电工株式会社 | Adhesive film for semiconductor device, and semiconductor device |
| CN104517951A (en) * | 2013-09-27 | 2015-04-15 | 台湾积体电路制造股份有限公司 | Dual facing BSI image sensors with wafer level stacking |
| CN204741022U (en) * | 2015-07-03 | 2015-11-04 | 豪威科技(上海)有限公司 | Storehouse formula image sensor wafer and chip |
-
2016
- 2016-11-24 CN CN201611044952.9A patent/CN106505074A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005259828A (en) * | 2004-03-10 | 2005-09-22 | Sony Corp | Solid state imaging device and its manufacturing method |
| US20050262941A1 (en) * | 2004-06-01 | 2005-12-01 | Samsung Electronics Co., Ltd. | Gyro-sensor comprising a plurality of component units, and fabricating method thereof |
| CN103996672A (en) * | 2010-11-18 | 2014-08-20 | 日东电工株式会社 | Adhesive film for semiconductor device, and semiconductor device |
| CN103392389A (en) * | 2011-02-25 | 2013-11-13 | 加川清二 | Near-field-noise-suppressing sheet |
| CN103066081A (en) * | 2011-09-16 | 2013-04-24 | 全视科技有限公司 | Dual-facing camera assembly |
| CN104517951A (en) * | 2013-09-27 | 2015-04-15 | 台湾积体电路制造股份有限公司 | Dual facing BSI image sensors with wafer level stacking |
| CN204741022U (en) * | 2015-07-03 | 2015-11-04 | 豪威科技(上海)有限公司 | Storehouse formula image sensor wafer and chip |
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