CN106504976A - The cleaning method of backflow board cavity - Google Patents
The cleaning method of backflow board cavity Download PDFInfo
- Publication number
- CN106504976A CN106504976A CN201510565776.2A CN201510565776A CN106504976A CN 106504976 A CN106504976 A CN 106504976A CN 201510565776 A CN201510565776 A CN 201510565776A CN 106504976 A CN106504976 A CN 106504976A
- Authority
- CN
- China
- Prior art keywords
- formic acid
- board cavity
- backflow
- purge gas
- backflow board
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims abstract description 35
- 238000004140 cleaning Methods 0.000 title claims abstract description 33
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 claims abstract description 154
- 235000019253 formic acid Nutrition 0.000 claims abstract description 77
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 claims abstract description 76
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims abstract description 70
- 239000013078 crystal Substances 0.000 claims abstract description 53
- 238000010926 purge Methods 0.000 claims abstract description 46
- PTSNAAXZLFGCNO-UHFFFAOYSA-N formic acid;tin Chemical compound [Sn].OC=O PTSNAAXZLFGCNO-UHFFFAOYSA-N 0.000 claims abstract description 41
- 238000000859 sublimation Methods 0.000 claims abstract description 7
- 230000008022 sublimation Effects 0.000 claims abstract description 7
- 239000000463 material Substances 0.000 claims description 22
- 238000004321 preservation Methods 0.000 claims description 9
- 238000001816 cooling Methods 0.000 claims description 8
- 238000010438 heat treatment Methods 0.000 claims description 8
- 208000002925 dental caries Diseases 0.000 claims 1
- 238000002425 crystallisation Methods 0.000 abstract description 6
- 230000008025 crystallization Effects 0.000 abstract description 6
- 239000007789 gas Substances 0.000 description 50
- 238000010992 reflux Methods 0.000 description 9
- 230000007547 defect Effects 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 239000012535 impurity Substances 0.000 description 6
- 230000004048 modification Effects 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 230000000630 rising effect Effects 0.000 description 4
- 239000012159 carrier gas Substances 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000004821 distillation Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 229910001316 Ag alloy Inorganic materials 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 239000008141 laxative Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 230000001543 purgative effect Effects 0.000 description 2
- 201000007336 Cryptococcosis Diseases 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000008187 granular material Substances 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910001338 liquidmetal Inorganic materials 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B9/00—Cleaning hollow articles by methods or apparatus specially adapted thereto
- B08B9/08—Cleaning containers, e.g. tanks
- B08B9/0804—Cleaning containers having tubular shape, e.g. casks, barrels, drums
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Engineering (AREA)
- Cleaning By Liquid Or Steam (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The cleaning method of the backflow board cavity of the present invention, including：Backflow board cavity is provided, on the wall of the backflow board cavity, forms formic acid tin crystals；Purge gas are passed through in the backflow board cavity, the formic acid tin crystals is contacted with the purge gas and rises Huawei's gaseous state, and flow to outside the backflow board cavity, wherein with the purge gas, the temperature of the cleaning is more than or equal to the sublimation temperature of the formic acid tin crystals.In the present invention, formic acid stannum contact with purge gas so that formic acid stannum temperature raise and distil, gaseous formic acid stannum condenses into crystallization just as the air-flow of purge gas discharges cavity together in the exhaustor outside cavity.Formic acid flows through each region of cavity, thus can clean up the formic acid stannum in backflow board cavity.
Description
Technical field
A kind of the present invention relates to semiconductor device processing technology field, more particularly to cleaning of backflow board cavity
Method.
Background technology
In order to carry out the encapsulation of chip (chip), on wafer (wafer), there must be projection (bump) shape
Into wafer bumps (wafer bump) so as to the substrate connection with encapsulation.When making projection, first shape on wafer
Into Underbump metallization layer (UBM) structure, on Underbump metallization layer, then form a stannum material.Stannum material is passed through
Cross backflow solidify afterwards and form projection.In order to prevent the oxidation of the stannum material in reflux course or remove stannum material surface
Stannum oxide, needs to be passed through nitrogen and formic acid in reflux course.However, formic acid can generate first with stannum oxide reaction
Sour stannum, gaseous state formic acid stannum are sublimated to the cold as solid-state, are remained on the wall of backflow board cavity.Follow-up
During projection is formed on wafer, formic acid stannum can come off in crystal column surface, form defect, affect wafer
Performance.
Therefore, it is necessary to clean to the board cavity that flows back, prevent formic acid stannum from forming defect in crystal column surface.
The cleaning of cavity is needed in prior art cavity is carried out lowering the temperature, begins to speak, cleans, then the operation such as heat up,
And need to expend more manpower and materials, affect the production capacity of wafer bumps；Also, can be in return current machine when beginning to speak
Outer boundry particle is introduced in platform cavity, so as to increased the granule risk of subsequent product.
Content of the invention
It is an object of the invention to, there is provided a kind of cleaning method of backflow board cavity, by the residual of formic acid stannum
Thing is rejected to outside cavity, it is to avoid the defect that formic acid stannum is produced to crystal column surface, improves the production effect of wafer bumps
Rate.
For solving above-mentioned technical problem, the present invention provides a kind of cleaning method of backflow board cavity, including；
One backflow board cavity is provided, on the wall of the backflow board cavity, is formed with formic acid tin crystals；
Purge gas, the formic acid tin crystals and the purge gas are passed through in the backflow board cavity
Contact rises Huawei's gaseous state, and flow to outside the backflow board cavity, wherein with the purge gas, described clear
Sublimation temperature of the temperature that washes more than or equal to the formic acid tin crystals.
Optionally, the purge gas are reducibility gas.
Optionally, the purge gas are formic acid gas.
Optionally, the temperature of the purge gas being passed through is 200 DEG C -300 DEG C.
Optionally, the time of the purge gas being passed through is more than or equal to 30min.
Optionally, the concentration of the purge gas being passed through is more than or equal to 10000ppm
Optionally, the flow of the purge gas being passed through is more than or equal to 30000sccm.
Optionally, the external exhaustor of the backflow board cavity, formic acid stannum gas are coagulated in the exhaustor
China forms formic acid tin crystals, whether judges cleaning process by variable quantity of the formic acid tin crystals in the exhaustor
Complete.
Optionally, a heater is additionally provided with outside the backflow board cavity, for heating the purge gas.
Optionally, the backflow board cavity includes preheating zone, heating zone, heat preservation zone and cooling area, is passed through
After the purge gas, the temperature of the preheating zone, the heating zone, the heat preservation zone and the cooling area
Degree is all higher than the sublimation temperature equal to the formic acid tin crystals..
Optionally, the concrete steps for forming formic acid tin crystals in the backflow board cavity include；
Wafer is provided, the wafer includes stannum material, the wafer is placed in the backflow board cavity；
Formic acid is passed through in the backflow board cavity, the formic acid reacts to form formic acid stannum with the stannum material,
Formic acid stannum is sublimated on the wall of the backflow board cavity, forms formic acid tin crystals.
The cleaning method of the backflow board cavity of the present invention, is passed through purge gas, institute into backflow board cavity
State the sublimation temperature of the temperature more than or equal to formic acid tin crystals of cleaning.Purge gas can flow to backflow board cavity
Each place, formic acid tin crystals contact with purge gas so that the rising of formic acid stannum temperature and liter Huawei gaseous state,
Gaseous formic acid stannum just discharges cavity together with the air-flow of purge gas, condenses in the exhaustor outside cavity
Into crystallization.May determine that by the generating process crystallized in exhaustor whether the formic acid stannum residual in cavity cleans
Totally.Formic acid tin crystals in backflow board cavity can be cleaned up by the present invention, and not in cavity
Other impurities are introduced, so as to avoid defect being formed in crystal column surface.
Description of the drawings
Fig. 1 is the flow chart of the cleaning method of present invention backflow board cavity；
Fig. 2 is the structure chart in one embodiment of cleaning method of present invention backflow board cavity.
Specific embodiment
The cleaning method of the backflow board cavity of the present invention is retouched in more detail below in conjunction with schematic diagram
State, which show the preferred embodiments of the present invention, it should be appreciated that those skilled in the art can change here
The present invention of description, and still realize the advantageous effects of the present invention.Therefore, description below is appreciated that
Widely known for those skilled in the art, and it is not intended as limitation of the present invention.
The core concept of the present invention is that, after backflow, the temperature of the board cavity that flows back is relatively low for stannum material
Part, formic acid stannum can be sublimated to crystallize and be formed residual, the purge gas into backflow board cavity, purge gas
Temperature of the temperature more than or equal to formic acid tin crystals distillation, purge gas can flow to each ground of backflow board cavity
Side, formic acid tin crystals contact with purge gas so that the rising of formic acid stannum temperature and liter Huawei gaseous state, and with clear
The air-flow of gas washing body discharges cavity together, crystallization of sublimating in the exhaustor outside cavity.By the generation for crystallizing
Process may determine that whether the formic acid stannum residual in cavity cleans up.Formic acid tin crystals is white crystal, when
When white crystal in exhaustor is not further added by, it is believed that the formic acid stannum in backflow board cavity has cleaned dry
Only.The present invention can not introduce other impurities in cavity, will be dry for the formic acid stannum cleaning in backflow board cavity
Only, so as to avoid crystal column surface formed defect.
The structural representation of the backflow board of the present invention is with reference to shown in Fig. 1, and the backflow below in conjunction with Fig. 2
The flow chart of the cleaning method of board is specifically described to the cleaning method of the present invention.
Execution step S1, there is provided backflow board, backflow board include the backflow board cavity for reflux course
20, the board cavity 20 that flows back include preheating zone (this be it will be appreciated by those skilled in the art that, in figure not
Illustrate), heating zone (this be it will be appreciated by those skilled in the art that, not shown in figure), heat preservation zone 21,
Cooling area 22, is formed with formic acid tin crystals on the wall of backflow board cavity 20.
In the present embodiment, the formic acid tin crystals on the wall of backflow board cavity 20 is wafer in solder reflow mistake
Residual in journey, its detailed process is as follows：Wafer 10 is provided, 10 surface of wafer includes engagement pad, stannum material etc.
Structure (not shown), stannum material are sn-ag alloy material, for being formed in the back-end process of wafer 10
Projection cube structure.Wafer 10 is placed in backflow board cavity 20, wafer 10 is placed in backflow board cavity 20
Heat preservation zone 21 in so that in reflux course, the temperature of wafer 10 is more stable.To the board cavity 20 that flows back
Heated up so that the temperature of heat preservation zone 21 is maintained 200 DEG C -300 DEG C, nitrogen conduct is passed through in cavity
Shielding gas prevents stannum material oxidized in reflux course, and stannum material is flowed back, and the time of reflux course is
15min-25min.Temperature in reflux course exceedes the fusing point of sn-ag alloy so that stannum material is molten into liquid gold
Category, liquid metal in the presence of surface tension can become and connect torulose shape.However, due to stannum material
The shape of bottom is fixed so that stannum material formed spherical so that stannum material formed wafer projection.Backflow
During, as the oxygen of residual is difficult to avoid that in cavity, to form one layer of oxygen so as to aoxidize on stannum material surface
Changing stannum, therefore, a small amount of formic acid gas being passed through while nitrogen is passed through, the concentration of the formic acid being passed through is
500ppm-1000ppm.Formic acid both had faintly acid, while have reproducibility again.Now, formic acid can be with
The stannum oxide reaction on stannum material top layer, so that remove the oxide layer on stannum material surface so that the wafer bumps of formation
Performance is more preferable.But, formic acid is reacted in heat preservation zone 21 with the stannum oxide of stannum material, and the formic acid stannum of generation is gas
State, gaseous formic acid stannum flow to 22 other regions of grade of cooling area in cavity, when the temperature in the region relatively low (low
In 200 DEG C) when.Gaseous formic acid stannum is sublimated to the cold and crystallizes into solid-state, therefore, in the cooling area of cavity
The low region of 22 grade other temperature, formic acid stannum form crystallization and remain in cavity.
In the present invention, follow-up wafer is carried out in the backflow board cavity 20 for remaining formic acid tin crystals and flowed back
During, formic acid tin crystals can come off and form residue in crystal column surface, form defect, affect wafer
Performance.Additionally, in the present embodiment, illustrate so that the reflux course of wafer forms formic acid tin crystals as an example,
It will be appreciated by persons skilled in the art that formic acid tin crystals can be residual to be formed in other technical process
Stay in backflow board cavity, the present invention is without limitation.
Execution step S2, by purge gas from the one end for the air inlet pipe 30 being connected with the backflow board cavity
Backflow board cavity 20 is passed through, the temperature of the purge gas is more than or equal to the temperature of formic acid tin crystals distillation,
So that formic acid tin crystals is contacted with the purge gas and temperature rising, and rise Huawei's gas.Need explanation
It is that the purge gas can also have reproducibility so that during purge gas are passed through, purgative gas
Body and formic acid tin crystals or the other impurities in cavity can also carry out the reaction of reproducibility so that clear in cavity
That washed is more abundant.In the present embodiment, illustrated as a example by being passed through formic acid gas, using formic acid gas not
Impurity is easily introduced, formic acid is entered in cavity from air inlet pipe 30.In 30 middle setting of air inlet pipe, one heater 40,
The depth of formic acid is heated to the gaseous state formic acid that predetermined temperature is 200 DEG C -300 DEG C by heater 40 by formic acid,
Gaseous state formic acid is passed through in cavity.The concentration of the formic acid being passed through is more than or equal to 10000ppm, the stream of the formic acid being passed through
Amount is more than or equal to 30000sccm so that after being passed through the purge gas, preheating zone, heating zone, cooling area
And the temperature of heat preservation zone is above the temperature of formic acid tin crystals distillation, and the total amount foot of the formic acid for causing to be passed through
To remove all of formic acid stannum for being remained in cavity.Additionally, under the formic acid gas of the concentration and flow,
The pressure and pressure flowed back in board cavity 20 can preferably be controlled so that purge gas and formic acid tin crystals
That reacted is more abundant, and enables formic acid stannum gas to flow to the outside of backflow board cavity 20 faster.First
After acid gas enter backflow board cavity 20, the formic acid tin crystals formic acid higher with temperature is contacted, formic acid stannum
Heat rises Huawei's gaseous state, and gaseous formic acid stannum is flowed outside cavity together with the air-flow of formic acid.In the present embodiment
In, the time of the formic acid being passed through is more than or equal to 30min, and the high temperature being continually fed into, the formic acid of high concentration can flow
Through each place in cavity, so that the formic acid stannum of each place residual can distil in cavity
For gaseous state, and with formic acid gas Liu Dao exhaustors 50 in.
It should be noted that in the cleaning method of the backflow board cavity of the present invention, also include step S3,
In step s3, formic acid stannum is being sublimated to form knot with being formed in the exhaustor 50 being connected outside backflow board cavity
Brilliant.It is understood that formic acid tin crystals is white, therefore, it can the variable quantity by formic acid tin crystals
Judge whether cleaning process completes.When the crystallization that formic acid stannum is formed in exhaustor 50 is not further added by, can be with
Judge that the residual of the formic acid stannum in now cavity is cleaned.Judge that the variable quantity of formic acid tin crystals can be adopted
Method with directly observing.Certainly, in the present embodiment, it is also possible to which the composition of the gas at exhaustor 30 is entered
Row detection, so that judge whether formic acid stannum cleans completely.
Additionally, adopting the formic acid gas of high-temperature, high-temperature, high flow capacity in the present embodiment as removal formic acid
The carrier gas of tin crystals, certainly, can also adopt other carrier gas to remove formic acid tin crystals in the present invention.For example,
Reducibility gas hydrogen.But, using formic acid as reducibility gas in reflux course, therefore, this
The formic acid of bright employing, can not be in the case of introducing other impurities in backflow board cavity used as carrier gas, will
Formic acid tin crystals in cavity is removed.
In sum, the cleaning method of backflow board cavity of the invention.The purgative gas into backflow board cavity
Body, the temperature of purge gas are higher than the sublimation temperature of formic acid tin crystals.The purge gas being continually fed into can flow to
Cavity each place, formic acid stannum contact with purge gas so that formic acid stannum temperature rising and distil, gaseous
Formic acid stannum just discharges cavity together with the air-flow of purge gas, condenses into crystallization in the exhaustor outside cavity.
May determine that by the generating process for crystallizing whether the formic acid stannum residual in cavity cleans up.The present invention can be with
Formic acid stannum in backflow board cavity is cleaned up, and other impurities is not introduced in cavity, so as to keep away
Exempt to form defect in crystal column surface.
Obviously, those skilled in the art can carry out various changes and modification without deviating from this to the present invention
Bright spirit and scope.So, if the present invention these modification and modification belong to the claims in the present invention and
Within the scope of its equivalent technologies, then the present invention is also intended to comprising these changes and modification.
Claims (11)
1. a kind of backflow board cavity cleaning method, it is characterised in that include：
One backflow board cavity is provided, on the wall of the backflow board cavity, is formed with formic acid tin crystals；
Purge gas are passed through in the backflow board cavity, the formic acid tin crystals is contacted with the purge gas and rises Huawei's gaseous state, and flow to outside the backflow board cavity, wherein with the purge gas, the temperature of the cleaning is more than or equal to the sublimation temperature of the formic acid tin crystals.
2. as claimed in claim 1 backflow board cavity cleaning method, it is characterised in that the purge gas be reducibility gas.
3. as claimed in claim 2 backflow board cavity cleaning method, it is characterised in that the purge gas be formic acid gas.
4. as claimed in claim 1 backflow board cavity cleaning method, it is characterised in that the temperature of the purge gas being passed through be 200 DEG C -300 DEG C.
5. as claimed in claim 1 backflow board cavity cleaning method, it is characterised in that the time of the purge gas being passed through be more than or equal to 30min.
6. as claimed in claim 1 backflow board cavity cleaning method, it is characterised in that the concentration of the purge gas being passed through be more than or equal to 10000ppm.
7. as claimed in claim 1 backflow board cavity cleaning method, it is characterised in that the flow of the purge gas being passed through be more than or equal to 30000sccm.
8. as described in any one in claim 1-7 backflow board cavity cleaning method, it is characterized in that, the external exhaustor of board cavity that flows back, formic acid stannum gas sublimates to form formic acid tin crystals in the exhaustor, judges whether cleaning process completes by variable quantity of the formic acid tin crystals in the exhaustor.
9. as described in any one in claim 1-7 backflow board cavity cleaning method, it is characterised in that be additionally provided with a heater outside the backflow board cavity, for heating the purge gas.
10. as claimed in claim 1 backflow board cavity cleaning method, it is characterized in that, the backflow board cavity includes preheating zone, heating zone, heat preservation zone and cooling area, after being passed through the purge gas, the temperature of the preheating zone, the heating zone, the heat preservation zone and the cooling area is all higher than the sublimation temperature equal to the formic acid tin crystals.
The cleaning method of 11. backflow board cavitys as claimed in claim 1, it is characterised in that the concrete steps for forming formic acid tin crystals in the backflow board cavity include：
Wafer is provided, the wafer includes stannum material, the wafer is placed in the backflow board cavity；
Formic acid is passed through in the backflow board cavity, the formic acid reacts to form formic acid stannum with the stannum material, formic acid stannum is sublimated on the wall of the backflow board cavity, forms formic acid tin crystals.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510565776.2A CN106504976B (en) | 2015-09-07 | 2015-09-07 | The cleaning method of reflux board cavity |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510565776.2A CN106504976B (en) | 2015-09-07 | 2015-09-07 | The cleaning method of reflux board cavity |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN106504976A true CN106504976A (en) | 2017-03-15 |
| CN106504976B CN106504976B (en) | 2019-05-03 |
Family
ID=58286703
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510565776.2A Active CN106504976B (en) | 2015-09-07 | 2015-09-07 | The cleaning method of reflux board cavity |
Country Status (1)
| Country | Link |
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| CN (1) | CN106504976B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114234630A (en) * | 2022-02-24 | 2022-03-25 | 泰姆瑞（北京）精密技术有限公司 | Online type partition vacuum furnace with cleaning function and welding method thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5913127A (en) * | 1995-06-29 | 1999-06-15 | Micron Technology, Inc. | Method to thermally form hemispherical grain (HSG) silicon to enhance capacitance for application in high density DRAMS |
| CN101160647A (en) * | 2004-06-10 | 2008-04-09 | 塞米吉尔公司 | Serial thermal processor arrangement |
| CN104259153A (en) * | 2014-07-24 | 2015-01-07 | 上海华力微电子有限公司 | Furnace tube cleaning process |
-
2015
- 2015-09-07 CN CN201510565776.2A patent/CN106504976B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5913127A (en) * | 1995-06-29 | 1999-06-15 | Micron Technology, Inc. | Method to thermally form hemispherical grain (HSG) silicon to enhance capacitance for application in high density DRAMS |
| CN101160647A (en) * | 2004-06-10 | 2008-04-09 | 塞米吉尔公司 | Serial thermal processor arrangement |
| CN104259153A (en) * | 2014-07-24 | 2015-01-07 | 上海华力微电子有限公司 | Furnace tube cleaning process |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114234630A (en) * | 2022-02-24 | 2022-03-25 | 泰姆瑞（北京）精密技术有限公司 | Online type partition vacuum furnace with cleaning function and welding method thereof |
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| Publication number | Publication date |
|---|---|
| CN106504976B (en) | 2019-05-03 |
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