CN106501305A - Measuring method based on the infra-red radiation film transmission rate of thermal infrared imager - Google Patents
Measuring method based on the infra-red radiation film transmission rate of thermal infrared imager Download PDFInfo
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Abstract
The present invention provides a kind of measuring method of the infra-red radiation film transmission rate based on thermal infrared imager, at least includes：One heat-radiating substrate for being coated with infra-red radiation film is provided；Under identical indoor environment, two group outgoing degrees of data of the heat-radiating substrate in different surfaces temperature are obtained respectively；Wherein, per group of outgoing degrees of data at least includes total infra-red radiation emittance, the reflection emittance of the radiant exitance of the infra-red radiation film, surrounding environment to the infra-red radiation film surface, and the radiant exitance of the transmission that sends of the heat-radiating substrate infra-red radiation film；Using outgoing degrees of data described in two groups, the transmitance of the infra-red radiation film is calculated.The present invention can measure the transmitance of the emissivity of infra-red radiation film and the emittance of heat-radiating substrate through infra-red radiation film, and then can targetedly design more preferable infra-red radiation film, strengthen the radiating efficiency of power device, reduce the junction temperature of chip.
Description
Technical field
The present invention relates to technical field of semiconductors, more particularly to a kind of infra-red radiation film based on thermal infrared imager is saturating
Cross the measuring method of rate.
Background technology
The field that modern society's power device is used is more and more, the power of application increasing (nowadays up to 100W with
On), most of electric energy all changes into heat, the junction temperature of chip is increased rapidly, when temperature exceedes maximum allowable temperature, device
Will damage because of overheated.Heat dissipation problem also just becomes the key of power-type device encapsulation, is problem in the urgent need to address.
When power-type proper device operation, using heat-radiating substrate be device heat transfer effective ways, the temperature of heat-radiating substrate
Degree is general to be required no more than 60 DEG C.On heat-radiating substrate, deposition infra-red radiation film is to solve one of method of heat dissipation problem,
The infra-red radiation film is a kind of wide infrared transparent high emissivity film.After the deposition infra-red radiation film of heat-radiating substrate surface, no
The infrared ray of only infra-red radiation film outwardly emittance, and heat-radiating substrate radiation can also pass through infra-red radiation film
To external diffusion.In the case of infra-red radiation thin film radiation energy maximum, the emittance of heat-radiating substrate should be put forward as far as possible through red
The transmitance of external radiation film, so that strengthen radiating effect.
But it is thin through infra-red radiation to measure the emittance of heat-radiating substrate to there is presently no a kind of effectively reliable method
The transmitance of film, although the equipment such as infrared spectrometer can survey the antireflective effect for depositing IR transparent films above transparent material,
The maximum transmission of corresponding wavelength is obtained, but the heat-radiating substrate used by power-type device is that opaque material is made, therefore
Transmitance of the emittance through infra-red radiation film that heat-radiating substrate cannot be measured using existing infrared spectrometer, also with regard to nothing
Method pointedly improves the transmitance of the emittance through infra-red radiation film of heat-radiating substrate.
Therefore, the measurement of the emittance through the transmitance of infra-red radiation film of heat-radiating substrate how is realized, is urgently
The problem of solution.
Content of the invention
The shortcoming of prior art in view of the above, it is an object of the invention to provide a kind of based on the red of thermal infrared imager
The measuring method of external radiation film transmission rate, for solving to measure the emittance of heat-radiating substrate in prior art through red
The problem of the transmitance of external radiation film.
For achieving the above object and other related purposes, to provide a kind of infra-red radiation based on thermal infrared imager thin for the present invention
The measuring method of film transmitance, wherein, the measuring method of the infra-red radiation film transmission rate based on thermal infrared imager is at least
Including：
One heat-radiating substrate for being coated with infra-red radiation film is provided；
Under identical indoor environment, the two group outgoing number of degrees of the heat-radiating substrate in different surfaces temperature are obtained respectively
According to；Wherein, per group of outgoing degrees of data at least includes total infra-red radiation emittance, the radiation outgoing of the infra-red radiation film
Degree, reflection emittance of the surrounding environment to the infra-red radiation film surface, and the transmission that the heat-radiating substrate sends is described
The radiant exitance of infra-red radiation film；
Using outgoing degrees of data described in two groups, the transmitance of the infra-red radiation film is calculated.
Preferably, total infra-red radiation emittance is obtained, and concrete grammar is：
One thermal infrared imager is provided, and the emissivity of the thermal infrared imager is predisposed to 1；
Infra-red radiation is received by the thermal infrared imager, the thermal infrared imager shows phase when infra-red radiation is received
The temperature that answers；
Based on the temperature that the thermal infrared imager shows, total infra-red radiation emittance, and institute are obtained according to formula (1)
State total infra-red radiation emittance and also meet formula (2)：
Wt=ε Wf+(1-ε)Wa+εoτWo(2)；
Wherein, WtFor total infra-red radiation emittance, TtFor the temperature that the thermal infrared imager shows, σ is black body radiation
Constant, ε WfFor the radiant exitance of the infra-red radiation film, (1- ε) WaIt is the surrounding environment to the infra-red radiation film
The reflection emittance on surface, εoτWoThe radiant exitance of the transmission that sends for the heat-radiating substrate infra-red radiation film.
Preferably, the radiant exitance of the infra-red radiation film is obtained, and concrete grammar is：
Measure the surface temperature of the infra-red radiation film, wherein, the surface temperature of the infra-red radiation film with described
The surface temperature of heat-radiating substrate is approximately the same；
Based on the surface temperature of the infra-red radiation film, according to the radiation that formula (3) obtains the infra-red radiation film
Emittance：
Wherein, TfFor the surface temperature of the infra-red radiation film, ε is the emissivity of the infra-red radiation film, WfFor institute
State radiant exitance during surface temperature of the black matrix in the infra-red radiation film.
Preferably, reflection emittance of the surrounding environment to the infra-red radiation film surface is obtained, and concrete grammar is：
Measurement surrounding environment and the temperature of air, wherein, indoors during environment, the temperature of the surrounding environment is big with described
The temperature of gas is approximately the same；
Based on the temperature of the surrounding environment, the surrounding environment is obtained to the infra-red radiation film according to formula (4)
The reflection emittance on surface：
Wherein, TaFor the temperature of the surrounding environment, WaBe the black matrix in the surrounding environment temperature when radiation
Emittance.
Preferably, the radiant exitance of transmission that the heat-radiating substrate the sends infra-red radiation film, concrete side are obtained
Method is：
The one sample heat-radiating substrate for not covering the infra-red radiation film is provided；Wherein, the sample heat-radiating substrate and institute
Size, thickness, material and the surface temperature all same of heat-radiating substrate is stated, and in identical indoor environment；
Measure the emissivity of the sample heat-radiating substrate；
The surface temperature of emissivity and the infra-red radiation film based on the sample heat-radiating substrate, according to formula (5)
Obtain the radiant exitance of the sample heat-radiating substrate：
Wherein, εoWoFor the radiant exitance of the sample heat-radiating substrate, εoFor the emissivity of the sample heat-radiating substrate,
WoBe the black matrix in the sample heat-radiating substrate surface temperature when radiant exitance；
Based on the radiant exitance of the sample heat-radiating substrate, according to formula (6) obtain that the heat-radiating substrate sends saturating
Cross the radiant exitance of the infra-red radiation film：
Wherein, τ is the transmitance of the infra-red radiation film.
Preferably, the emissivity of the sample heat-radiating substrate is measured, and concrete grammar is：
The surface that the emittance of preset strength is projected the sample heat-radiating substrate；
Measure the reflected energy that the surface of the sample heat-radiating substrate sends；
Based on law of conservation of energy and Kirchhoff's law, according to the reflection that formula (7) calculates the sample heat-radiating substrate
Rate：
Wherein, ρ is the reflectivity of the sample heat-radiating substrate, ErFor the emittance of the preset strength, EoFor described anti-
Penetrate energy；
Based on the reflectivity of the sample heat-radiating substrate, according to the emissivity that formula (8) calculates the sample heat-radiating substrate：
εo=1- ρ (8).
Preferably, the transmitance of the infra-red radiation film, concrete grammar, using outgoing degrees of data described in two groups, are calculated
For：
The formula (1), (3), (4), (6) are substituted in formula (2), formula (9) after abbreviation, is obtained：
So that outgoing degrees of data described in two groups meets following equations group (10)：
Wherein, Tt1For the heat-radiating substrate temperature that the thermal infrared imager shows in first surface temperature, Tt2For institute
State the heat-radiating substrate temperature that the thermal infrared imager shows in second surface temperature, Tf1The heat-radiating substrate is in first surface temperature
The surface temperature of the infra-red radiation film measured when spending, Tf2For the institute that the heat-radiating substrate is measured in second surface temperature
State the surface temperature of infra-red radiation film；
So as to calculate the emissivity of the infra-red radiation film according to formula (11)：
Based on the emissivity of the infra-red radiation film, according to the transmission that formula (12) calculates the infra-red radiation film
Rate：
Preferably, the temperature difference between the first surface temperature and the second surface temperature of the heat-radiating substrate is 20
More than DEG C.
Preferably, the temperature of the surface temperature, the temperature of the surrounding environment and the air of the infra-red radiation film
Thermocouple measurement is adopted.
Preferably, the infra-red radiation film is transparent membrane, and the heat-radiating substrate is nontransparent substrate.
As described above, the measuring method of the infra-red radiation film transmission rate based on thermal infrared imager of the present invention, with
Lower beneficial effect：The emittance of emissivity and heat-radiating substrate that the present invention can measure infra-red radiation film passes through infra-red radiation
The transmitance of film, and then more preferable infra-red radiation film can be targetedly designed, improve the emittance of heat-radiating substrate
Through the transmitance of infra-red radiation film, so as to strengthen the radiating efficiency of power device, reduce the junction temperature of chip.In addition, this
The infra-red radiation film deposited on bright middle heat-radiating substrate, is not limited to a certain class film, and therefore present invention application is more extensive.
Description of the drawings
Fig. 1 is shown as the measuring method of the infra-red radiation film transmission rate based on thermal infrared imager of the embodiment of the present invention
Schematic flow sheet.
Fig. 2 is shown as in the measuring method based on the infra-red radiation film transmission rate of thermal infrared imager of the embodiment of the present invention
Thermal infrared imager receives each thermal-radiating schematic diagram.
Component label instructions
1 heat-radiating substrate
2 infra-red radiation films
3 far infrared atmospheric windows
4 thermal infrared imagers
S1～S3 steps
Specific embodiment
Embodiments of the present invention are described below by way of specific instantiation, those skilled in the art can be by this specification
Disclosed content understands other advantages and effect of the present invention easily.The present invention can also pass through in addition different concrete realities
The mode of applying is carried out or applies, and the every details in this specification can also be based on different viewpoints and application, without departing from
Various modifications and changes are carried out under the spirit of the present invention.
Fig. 1 and Fig. 2 is referred to, embodiments of the invention are related to a kind of infra-red radiation film transmission based on thermal infrared imager
The measuring method of rate.Idiographic flow is as shown in Figure 1.It should be noted that the diagram provided in the present embodiment is only with signal side
Formula illustrates the basic conception of the present invention, when only showing then the component relevant with the present invention in schema rather than implementing according to reality
Component count, shape and size are drawn, and during its actual enforcement, the kenel of each component, quantity and ratio can change for a kind of random
Become, and its assembly layout kenel be likely to increasingly complex.
As depicted in figs. 1 and 2, the measuring method of the infra-red radiation film transmission rate based on thermal infrared imager of the present embodiment
At least include：
Step S1, there is provided one is coated with the heat-radiating substrate 1 of infra-red radiation film 2.
Wherein, heat-radiating substrate 1 is nontransparent substrate, and infra-red radiation film 2 is transparent membrane.In the present embodiment, radiate
Substrate 1 adopts metal substrate, such as aluminium base, copper base etc.；Infra-red radiation film 2 adopts DLC (DLC, Diamond-
Like Carbon) film, DLC film is in 8 μm～14 μ m of infrared band with the high transparency.Additionally,
In other embodiments, heat-radiating substrate 1 can also adopt the substrate of other transparent materials, be not limited to a certain class substrate；With
When, infra-red radiation film 2 can also adopt the diamond thin in 3 μm～5 μ m of infrared band with high transparent, or
Person is transparent with low-refraction (n=1.38), good thermal stability, larger film layer in the range of wave band 120nm～8000nm
Magnesium fluoride (the MgF of the excellent properties such as mechanical strength2) film, or there is in visible-range the zinc sulphide of high transparent
(ZnS) film etc., is not limited to a certain class film.
Step S2, under identical indoor environment, obtains two group outgoing of the heat-radiating substrate 1 in different surfaces temperature respectively
Degrees of data.Wherein, every group of outgoing degrees of data at least includes total infra-red radiation emittance, the radiant exitance of infra-red radiation film 2,
Reflection emittance of the surrounding environment to 2 surface of infra-red radiation film, and the transmission infra-red radiation film 2 that heat-radiating substrate 1 sends
Radiant exitance.
It is to be understood that radiant exitance is exactly the ratio of radiation flux and radiation surface area, expression is meant that black matrix
Under uniform temperature T, in unit area, emittance of institute's radiation wavelength for λ within the unit interval, by thermal-radiating Planck
It is W that law is obtained the spectral radiant exitance of black matrix(λ,T)=c1/λ5[exp(c2/ λ T) -1], in formula, c1=3.7415 × 10-16W.m2, c2=1.4388 × 10-2m.K.The radiation that can obtain black matrix is integrated to above formula according to broad sense definite integral principle
Emittance, that is, Boltzmann thermal radiation law：In formula, σ is black matrix spoke
Constant is penetrated, equal to σ=5.67 × 10-8W/m2.K4.
In step s 2, total infra-red radiation emittance is obtained, and concrete grammar is：
First, there is provided a thermal infrared imager, and the emissivity of thermal infrared imager is predisposed to 1.
Secondly, infra-red radiation is received by thermal infrared imager, thermal infrared imager shows when infra-red radiation is received accordingly
Temperature.
Again, the temperature for being shown based on thermal infrared imager, obtains total infra-red radiation emittance according to formula (1), and always red
External radiation emittance also meets formula (2)：
Wt=ε Wf+(1-ε)Wa+εoτWo(2)；
Wherein, WtFor total infra-red radiation emittance, TtFor the temperature that thermal infrared imager shows, σ is black body radiation constant, ε Wf
For the radiant exitance of infra-red radiation film 2, (1- ε) WaFor reflection emittance of the surrounding environment to 2 surface of infra-red radiation film,
εoτWoThe radiant exitance of the transmission infra-red radiation film 2 sent for heat-radiating substrate 1.
As shown in Fig. 2 the heat radiation energy of heat-radiating substrate 1 and infra-red radiation film 2 thereon is through far infrared atmospheric electricity
After mouth 3, received by thermal infrared imager 4.It should be noted that work as surveying heat-radiating substrate 1 and infrared spoke thereon with thermal infrared imager 4
Penetrate film 2 heat radiation energy when, have certain difference with the heat radiation energy for surveying general object.Thermal infrared imager 4 is received
Infra-red radiation not only contains the radiant section on 2 surface of infra-red radiation film, surrounding environment reflected radiation part, air to it
Radiant section, and further comprises the part of the radiation transmission infra-red radiation film 2 launched by heat-radiating substrate 1.So, infrared heat
As total infra-red radiation emittance (radiant power) that instrument 4 is received is Wt=ε τeWf+(1-ε)τeWa+(1-τe)We+εoττeWo, formula
In, ε and τ is the emissivity and transmitance of infra-red radiation film 2 respectively, τeIt is atmospheric transmittance, ε τeWfIt is infra-red radiation film 2
Radiant exitance, (1- ε) τeWaIt is reflection emittance of the surrounding environment to 2 surface of infra-red radiation film, (1- τe)WeIt is air
Radiation, εoττeWoIt is the radiant exitance of the transmission infra-red radiation film 2 that heat-radiating substrate 1 sends.And in far infrared atmospheric window
3, room atmosphere transmitance is close to 1, i.e. τe=1, in total infra-red radiation emittance satisfaction that therefore thermal infrared imager 4 is received
State formula (2).
In step s 2, the radiant exitance of infra-red radiation film 2 is obtained, and concrete grammar is：
First, the surface temperature of measurement infra-red radiation film 2, wherein, the surface temperature of infra-red radiation film 2 and radiating base
The surface temperature of plate 1 is approximately the same.In the present embodiment, thermocouple measurement infra-red radiation film is utilized using contacting temperature measurement method
2 surface temperature, i.e., by thermocouple is carried out contact come thermometric with the infra-red radiation film 2 on heat-radiating substrate 1；And thermocouple
TES1300A thermometers etc. can be adopted.Certainly, in other examples, it would however also be possible to employ method for distinguishing or device are carrying out
The measurement of the surface temperature of infra-red radiation film 2, such as using temperature sensor etc., as long as infra-red radiation film 2 can be measured
Surface temperature, is not limited in method or the device being related in the present embodiment.Further, since infra-red radiation film 2 is very thin,
The surface temperature difference of the surface temperature of infra-red radiation film 2 and heat-radiating substrate 1 is less, is negligible, for the ease of meter
Calculate, in the present embodiment, the surface temperature of infra-red radiation film 2 is regarded as identical with the surface temperature of heat-radiating substrate 1.
Secondly, based on the surface temperature of infra-red radiation film 2, giving off for infra-red radiation film 2 is obtained according to formula (3)
Degree of penetrating：
Wherein, TfFor the surface temperature of infra-red radiation film 2, emissivity of the ε for infra-red radiation film 2, WfIt is in for black matrix
The radiant exitance during surface temperature of infra-red radiation film 2.
In step s 2, reflection emittance of the surrounding environment to 2 surface of infra-red radiation film is obtained, and concrete grammar is：
First, the temperature of measurement surrounding environment and air, wherein, indoors during environment, the temperature of surrounding environment and air
Temperature approximately the same.In the present embodiment, it is possible to use thermocouple, such as experiment indoor environment temperature meter (such as electron temperature
In respect of putting LR5001-20 humitures recorder and use for laboratory mercurial thermometer day) temperature of measurement surrounding environment and air
Temperature, indoors during environment, the temperature of air is just approximately equal to the temperature of surrounding environment.Certainly, in other examples,
The measurement of the temperature of surrounding environment and air can be carried out using method for distinguishing or device, such as using temperature sensor etc., only
The temperature of surrounding environment and air can be measured, is not limited in method or the device being related in the present embodiment.
Secondly, based on the temperature of surrounding environment, surrounding environment is obtained to 2 surface of infra-red radiation film according to formula (4)
Reflection emittance：
Wherein, TaFor the temperature of surrounding environment, WaBe black matrix in surrounding environment temperature when radiant exitance.
In step s 2, the radiant exitance of the transmission infra-red radiation film 2 that heat-radiating substrate 1 sends, concrete grammar are obtained
For：
First, there is provided one does not cover the sample heat-radiating substrate of infra-red radiation film；Wherein, sample heat-radiating substrate and radiating base
The size of plate 1, thickness, material and surface temperature all same, and in identical indoor environment；In the present embodiment, sample
Heat-radiating substrate is similarly nontransparent substrate.
Secondly, the emissivity of sample heat-radiating substrate is measured.
Again, based on sample heat-radiating substrate emissivity and the surface temperature of infra-red radiation film 2, obtain according to formula (5)
Radiant exitance to sample heat-radiating substrate：
Wherein, εoWoFor the radiant exitance of sample heat-radiating substrate, εoFor the emissivity of sample heat-radiating substrate, WoFor black matrix
In sample heat-radiating substrate surface temperature when radiant exitance.
Finally, the radiant exitance based on sample heat-radiating substrate, obtains the transmission that heat-radiating substrate 1 sends according to formula (6)
The radiant exitance of infra-red radiation film 2：
Wherein, transmitances of the τ for infra-red radiation film 2.
It is noted that the emissivity of above-mentioned measurement sample heat-radiating substrate, concrete grammar is：
First, the emittance of preset strength is projected the surface of sample heat-radiating substrate.
Secondly, the reflected energy that the surface of sample heat-radiating substrate sends is measured.
Again, based on law of conservation of energy and Kirchhoff's law, according to the reflection that formula (7) calculates sample heat-radiating substrate
Rate：
Wherein, reflectivity of the ρ for sample heat-radiating substrate, ErFor the emittance of preset strength, EoFor reflected energy.
Finally, the reflectivity based on sample heat-radiating substrate, according to the emissivity that formula (8) calculates sample heat-radiating substrate：
εo=1- ρ (8).
In the present embodiment, each method in recycling above-mentioned steps S2, obtains heat-radiating substrate 1 in first surface temperature
When first group of outgoing degrees of data, and second group outgoing degrees of data of the heat-radiating substrate 1 in second surface temperature.In order that
Final measurement result is more accurate, reduces error, needs to make first surface temperature and second surface temperature difference larger as far as possible.Excellent
Selection of land, the temperature difference between the first surface temperature and second surface temperature of heat-radiating substrate 1 be more than 20 DEG C, such as 20 DEG C, 25 DEG C,
30 DEG C, 35 DEG C etc..
Step S3, using two groups of outgoing degrees of data, calculates the transmitance of infra-red radiation film 2.Concrete grammar is：
Above-mentioned formula (1), (3), (4), (6) are substituted in formula (2), formula (9) after abbreviation, is obtained：
So that two groups of outgoing degrees of data meet following equations group (10)：
Wherein, Tt1For the temperature that thermal infrared imager shows in first surface temperature of heat-radiating substrate 1, Tt2For heat-radiating substrate 1
The temperature that thermal infrared imager shows in second surface temperature, Tf1The infrared spoke that heat-radiating substrate 1 is measured in first surface temperature
Penetrate the surface temperature of film 2, Tf2The surface temperature of the infra-red radiation film 2 measured in second surface temperature for heat-radiating substrate 1；
So as to calculate the emissivity of infra-red radiation film 2 according to formula (11)：
Based on the emissivity of infra-red radiation film 2, according to the transmitance that formula (12) calculates infra-red radiation film 2：
Transmitance τ of the infra-red radiation film 2 refers to the emittance of heat-radiating substrate 1 through infra-red radiation film 2
Transmitance.As can be seen here, the emittance of emissivity and heat-radiating substrate that the present embodiment can measure infra-red radiation film is passed through
The transmitance of infra-red radiation film, and then more preferable infra-red radiation film can be targetedly designed, improve heat-radiating substrate
Transmitance of the emittance through infra-red radiation film, so as to strengthen the radiating efficiency of power device, reduces the junction temperature of chip.
Divide the step of various methods above, be intended merely to describe clear, can merge into when realizing a step or
Some steps are split, multiple steps are decomposed into, as long as comprising identical logical relation, all in the protection domain of this patent
Interior；To adding inessential modification in algorithm or in flow process or introducing inessential design, but its algorithm is not changed
With the core design of flow process all in the protection domain of the patent.
In sum, the measuring method of the infra-red radiation film transmission rate based on thermal infrared imager of the invention, with
Lower beneficial effect：The emittance of emissivity and heat-radiating substrate that the present invention can measure infra-red radiation film passes through infra-red radiation
The transmitance of film, and then more preferable infra-red radiation film can be targetedly designed, improve the emittance of heat-radiating substrate
Through the transmitance of infra-red radiation film, so as to strengthen the radiating efficiency of power device, reduce the junction temperature of chip.In addition, this
The infra-red radiation film deposited on bright middle heat-radiating substrate, is not limited to a certain class film, and therefore present invention application is more extensive.Institute
So that the present invention effectively overcomes various shortcoming of the prior art and has high industrial utilization.
The principle and its effect of above-described embodiment only illustrative present invention, of the invention not for limiting.Any ripe
The personage for knowing this technology all can carry out modifications and changes to above-described embodiment under the spirit and the scope without prejudice to the present invention.Cause
This, those of ordinary skill in the art is complete with institute under technological thought without departing from disclosed spirit such as
Into all equivalent modifications or change, should by the present invention claim be covered.
Claims (10)
1. a kind of measuring method of the infra-red radiation film transmission rate based on thermal infrared imager, it is characterised in that described based on red
The measuring method of the infra-red radiation film transmission rate of outer thermal imaging system at least includes：
One heat-radiating substrate for being coated with infra-red radiation film is provided；
Under identical indoor environment, two group outgoing degrees of data of the heat-radiating substrate in different surfaces temperature are obtained respectively；
Wherein, per group of outgoing degrees of data at least includes total infra-red radiation emittance, the radiant exitance of the infra-red radiation film,
Reflection emittance of the surrounding environment to the infra-red radiation film surface, and the transmission that the heat-radiating substrate sends is described infrared
The radiant exitance of radiation film；
Using outgoing degrees of data described in two groups, the transmitance of the infra-red radiation film is calculated.
2. the measuring method of the infra-red radiation film transmission rate based on thermal infrared imager according to claim 1, its feature
It is, obtain total infra-red radiation emittance, concrete grammar is：
One thermal infrared imager is provided, and the emissivity of the thermal infrared imager is predisposed to 1；
Infra-red radiation is received by the thermal infrared imager, the thermal infrared imager shows when infra-red radiation is received accordingly
Temperature；
Based on the temperature that the thermal infrared imager shows, total infra-red radiation emittance is obtained according to formula (1), and described total
Infra-red radiation emittance also meets formula (2)：
Wt=ε Wf+(1-ε)Wa+εoτWo(2)；
Wherein, WtFor total infra-red radiation emittance, TtFor the temperature that the thermal infrared imager shows, σ is that black body radiation is normal
Number, ε WfFor the radiant exitance of the infra-red radiation film, (1- ε) WaIt is the surrounding environment to the infra-red radiation film table
The reflection emittance in face, εoτWoThe radiant exitance of the transmission that sends for the heat-radiating substrate infra-red radiation film.
3. the measuring method of the infra-red radiation film transmission rate based on thermal infrared imager according to claim 2, its feature
It is, obtain the radiant exitance of the infra-red radiation film, concrete grammar is：
The surface temperature of the infra-red radiation film is measured, wherein, the surface temperature of the infra-red radiation film and the radiating
The surface temperature of substrate is approximately the same；
Based on the surface temperature of the infra-red radiation film, according to the radiation outgoing that formula (3) obtains the infra-red radiation film
Degree：
Wherein, TfFor the surface temperature of the infra-red radiation film, ε is the emissivity of the infra-red radiation film, WfFor described black
Body is in the radiant exitance during surface temperature of the infra-red radiation film.
4. the measuring method of the infra-red radiation film transmission rate based on thermal infrared imager according to claim 3, its feature
It is, obtain reflection emittance of the surrounding environment to the infra-red radiation film surface, concrete grammar is：
Measurement surrounding environment and the temperature of air, wherein, indoors during environment, the temperature of the surrounding environment and the air
Temperature is approximately the same；
Based on the temperature of the surrounding environment, the surrounding environment is obtained to the infra-red radiation film surface according to formula (4)
Reflection emittance：
Wherein, TaFor the temperature of the surrounding environment, WaBe the black matrix in the surrounding environment temperature when radiation outgoing
Degree.
5. the measuring method of the infra-red radiation film transmission rate based on thermal infrared imager according to claim 4, its feature
It is, the radiant exitance of the transmission that the acquisition heat-radiating substrate the sends infra-red radiation film, concrete grammar is：
The one sample heat-radiating substrate for not covering the infra-red radiation film is provided；Wherein, the sample heat-radiating substrate and described dissipate
The size of hot substrate, thickness, material and surface temperature all same, and in identical indoor environment；
Measure the emissivity of the sample heat-radiating substrate；
The surface temperature of emissivity and the infra-red radiation film based on the sample heat-radiating substrate, obtains according to formula (5)
The radiant exitance of the sample heat-radiating substrate：
Wherein, εoWoFor the radiant exitance of the sample heat-radiating substrate, εoFor the emissivity of the sample heat-radiating substrate, WoFor institute
State radiant exitance during surface temperature of the black matrix in the sample heat-radiating substrate；
Based on the radiant exitance of the sample heat-radiating substrate, the transmission institute that the heat-radiating substrate sends is obtained according to formula (6)
State the radiant exitance of infra-red radiation film：
Wherein, τ is the transmitance of the infra-red radiation film.
6. the measuring method of the infra-red radiation film transmission rate based on thermal infrared imager according to claim 5, its feature
It is, measure the emissivity of the sample heat-radiating substrate, concrete grammar is：
The surface that the emittance of preset strength is projected the sample heat-radiating substrate；
Measure the reflected energy that the surface of the sample heat-radiating substrate sends；
Based on law of conservation of energy and Kirchhoff's law, according to the reflectivity that formula (7) calculates the sample heat-radiating substrate：
Wherein, ρ is the reflectivity of the sample heat-radiating substrate, ErFor the emittance of the preset strength, EoFor the reflection energy
Amount；
Based on the reflectivity of the sample heat-radiating substrate, according to the emissivity that formula (8) calculates the sample heat-radiating substrate：
εo=1- ρ (8).
7. the measuring method of the infra-red radiation film transmission rate based on thermal infrared imager according to claim 5, its feature
It is, using outgoing degrees of data described in two groups, calculate the transmitance of the infra-red radiation film, concrete grammar is：
The formula (1), (3), (4), (6) are substituted in formula (2), formula (9) after abbreviation, is obtained：
So that outgoing degrees of data described in two groups meets following equations group (10)：
Wherein, Tt1For the heat-radiating substrate temperature that the thermal infrared imager shows in first surface temperature, Tt2Dissipate for described
The hot substrate temperature that the thermal infrared imager shows in second surface temperature, Tf1The heat-radiating substrate is in first surface temperature
The surface temperature of the infra-red radiation film for measuring, Tf2For the heat-radiating substrate measure in second surface temperature described red
The surface temperature of external radiation film；
So as to calculate the emissivity of the infra-red radiation film according to formula (11)：
Based on the emissivity of the infra-red radiation film, according to the transmitance that formula (12) calculates the infra-red radiation film：
8. the measuring method of the infra-red radiation film transmission rate based on thermal infrared imager according to claim 7, its feature
It is, the temperature difference between the first surface temperature and the second surface temperature of the heat-radiating substrate is more than 20 DEG C.
9. the measuring method of the infra-red radiation film transmission rate based on thermal infrared imager according to claim 4, its feature
It is, the temperature of the surface temperature, the temperature of the surrounding environment and the air of the infra-red radiation film adopts thermoelectricity
Even measurement.
10. the measurement side of the infra-red radiation film transmission rate based on thermal infrared imager according to any one of claim 1～9
Method, it is characterised in that the infra-red radiation film is transparent membrane, and the heat-radiating substrate is nontransparent substrate.
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