CN106498353A - A kind of magnetically controlled sputter method and device - Google Patents
A kind of magnetically controlled sputter method and device Download PDFInfo
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- CN106498353A CN106498353A CN201510567666.XA CN201510567666A CN106498353A CN 106498353 A CN106498353 A CN 106498353A CN 201510567666 A CN201510567666 A CN 201510567666A CN 106498353 A CN106498353 A CN 106498353A
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Abstract
The invention discloses a kind of magnetically controlled sputter method and device, in the present invention, the magnetically controlled sputter method includes：At least two target position with target and magnet are provided, have between adjacent target position at regular intervals, and magnet is moved with second speed with respect to target and to form shifting magnetic field and shifting magnetic field there is certain power, one is provided with First Speed at the uniform velocity through the workpiece of shifting magnetic field, the direction of motion of workpiece is first direction, the direction setting contrary with first direction is second direction, magnet is moved back and forth with second direction in the range of target in the first direction, magnet completes once the reciprocating time for a cycle, and the initial position of each target position shifting magnetic field is complementary to be arranged；And provide corresponding magnetic control sputtering device.Solve the problems, such as using shifting magnetic field coating film thickness inequality, so as to lift plating film uniformity while target utilization is increased.
Description
Technical field
The present invention relates to magnetron sputtering technique, more particularly to a kind of magnetically controlled sputter method and device.
Background technology
Magnetron sputtering occurs in magnetic field range, commonly uses shifting magnetic field and improve target utilization in prior art.
Shifting magnetic field is formed by the uniform velocity moving magnet, is allowed magnet to move reciprocatingly, can so be effectively improved target
Utilization rate, the utilization rate of target can be allowed to reach 40% to 50%.But this method is still present
Problem, it is assumed that the translational speed in magnetic field is V1, the translational speed of workpiece is V2, when magnetic field moves reciprocatingly,
When magnetic field is moved in the same direction with workpiece, their relative velocity is V2-V1, when magnetic field and workpiece counter motion,
Their relative velocity is V1+V2.And, when shifting magnetic field movement velocity is slower (with workpiece operation speed
Degree is compared), the translational speed of shifting magnetic field is less on the membrane uniformity impact of workpiece, but works as shifting magnetic field
When relative velocity is very fast, larger to workpiece membrane effect.This results in, when in the same direction, the plated film of practical work piece
Speed is that the coating speed of practical work piece is run for higher speed, can thus be made compared with low cruise, when reverse
The uniformity of the workpiece plated film in volume production differs, it is difficult to ensure quality and control percent defective.
Content of the invention
In view of this, the present invention provides one kind and can solve the problem that using shifting magnetic field magnetron sputtering non-uniform film thickness
The magnetically controlled sputter method and device of problem, can lift plating film uniformity while target utilization is increased.
For achieving the above object, technical scheme is as follows：
According to an aspect of the present invention, there is provided a kind of magnetically controlled sputter method, including：There is provided at least two
The individual target position with target and magnet, have between adjacent target position at regular intervals, and magnet with respect to target with
Two speed are moved and to form shifting magnetic field and the shifting magnetic field there is certain power；There is provided one with First Speed at the uniform velocity
The workpiece of shifting magnetic field is transported through, the direction of motion of the workpiece is first direction, contrary with the first direction
Direction setting be second direction；Magnet is moved back and forth between second direction in a first direction in target scope
Interior, magnet completes once the reciprocating time for a cycle；The initial position of each target position shifting magnetic field is mutual
Mend and arrange.
Preferably, the power in magnet reciprocatory movement in the magnetically controlled sputter method that the present invention is provided is permanent
Fixed.
Further, the present invention provide the magnetically controlled sputter method in First Speed constant, adjustment spacing and
In the cycle, make the length of spacing equal with the odd-multiple of the distance that workpiece was passed through within 1/2nd cycles.
Further, the present invention provide the magnetically controlled sputter method in constant gap, adjustment First Speed and
In the cycle, make the length of spacing equal with the odd-multiple of the distance that workpiece was passed through within 1/2nd cycles.
Further, the present invention provide the magnetically controlled sputter method in constant period, adjustment First Speed and
Spacing, makes the length of spacing equal with the odd-multiple of the distance that workpiece was passed through within 1/2nd cycles.
Preferably, in the magnet reciprocatory movement in the magnetically controlled sputter method that the present invention is provided, magnet edge
First direction motion power be the first power, the power that magnet is moved in a second direction be the second power, and
First power is different from the second power.
Further, the ratio of the first power and the second power in the magnetically controlled sputter method that the present invention is provided
Meet First Speed with second speed sum than First Speed and the difference of second speed.
Additionally, there is a need to the device for providing a kind of above-mentioned magnetically controlled sputter method of application, which includes at least two
Target position, connecting gear, the first drive mechanism and the second drive mechanism；Arrange at least two have target and
The target position of magnet, has at regular intervals between two neighboring target position, target is fixed on target position, and target is square
Shape target, its width are moved to form mobile magnetic relative to target with second speed at least above magnet width, magnet
And shifting magnetic field has certain power；First drive mechanism is arranged at least one end of device, connecting gear
The lower section of target position is layed in, workpiece is positioned over connecting gear upper surface, and the first drive mechanism drives connecting gear,
Connecting gear passes through shifting magnetic field with First Speed at the uniform velocity conveying work pieces, and the direction of motion of connecting gear is first
Direction, is second direction with first party in the opposite direction；Magnet is past between second direction in a first direction
Moved in the range of target again, magnet completes once the reciprocating time for a cycle；Each target position movement
The initial position in magnetic field is complementary to be arranged.
Preferably, in the magnet reciprocatory movement in the device that the present invention is provided, power setting is constant；
Any one of First Speed, spacing and cycle are constant, and in addition two is variable, makes the length and work of spacing
The odd-multiple of the distance that part was passed through within 1/2nd cycles is equal.
Preferably, in the magnet reciprocatory movement in the device that the present invention is provided, power is not set as perseverance
Fixed；The power that magnet is moved in the first direction is the first power, and the power that magnet is moved in a second direction is the
Two power, and the first power differed with the second power；The ratio that the first power is arranged with the second power is equal to
First Speed is with second speed sum than First Speed and the difference of second speed.
The present invention provide the magnetically controlled sputter method and device in, due to magnet in the first direction with second direction
Moving back and forth, shifting magnetic field is formed in the range of target, the complementary initial bit that shifting magnetic field in each target position is set
Put, and regulation shifting magnetic field power and relevant parameter realize that the coating effects of shifting magnetic field between each target position are mutual
Mend.So as to solve the problems, such as using shifting magnetic field magnetron sputtering non-uniform film thickness, it is ensured that increasing target profit
With the uniformity that can lift plated film while rate.
Description of the drawings
Below in conjunction with drawings and Examples, the invention will be further described, in accompanying drawing：
The schematic flow sheet of the magnetically controlled sputter method that Fig. 1 is provided for the present invention；
The schematic flow sheet of magnetically controlled sputter method during the power invariability that Fig. 2 is provided for the present invention；
Schematic flow sheets of the Fig. 3 for the power that the present invention is provided magnetically controlled sputter method when non-constant；
The structural representation of one preferred embodiment of magnetic control sputtering device that Fig. 4 is provided for the present invention；
Fig. 5 a be when magnetic control sputtering device shifting magnetic field initial position and workpiece shown in Fig. 4 is in the same direction thickness into
Shape principle schematic；
Fig. 5 b be when magnetic control sputtering device shifting magnetic field initial position and workpiece shown in Fig. 4 is reverse thickness into
Shape principle schematic；
Fig. 6 is the magnetic control sputtering device workpiece thickness Forming Theory schematic diagram shown in Fig. 4；
Magnetically controlled sputter method and the magnet movement track schematic diagram of device that Fig. 7 is provided for the present invention.
Specific embodiment
The magnetically controlled sputter method and device that there is provided to illustrate the invention technical problem to be solved, technical scheme
And beneficial effect is clearer, clear, below in conjunction with drawings and Examples, the present invention is carried out further in detail
Describe in detail bright.It should be appreciated that specific embodiment described herein is not used to only in order to explain the present invention
Limit the present invention.
The schematic flow sheet of the magnetically controlled sputter method provided for the present invention with reference to Fig. 1, Fig. 1, the present invention are provided
Magnetically controlled sputter method, which implements step and is：
S10：Magnet is moved to form shifting magnetic field with second speed with respect to target.
At least two target position with target and magnet are provided, between adjacent target position, have at regular intervals, and magnetic
Body phase is moved with second speed to target and to form shifting magnetic field and shifting magnetic field there is certain power.
S20：Workpiece at the uniform velocity passes through shifting magnetic field with First Speed.
One is provided with First Speed at the uniform velocity through the workpiece of shifting magnetic field, the direction of motion of workpiece is first party
To the direction setting contrary with first direction is second direction.
S30：Magnet is moved back and forth in the range of target.
Magnet is moved back and forth with second direction in the range of target in the first direction, and magnet completes once reciprocal fortune
The dynamic time is a cycle.
S40：The initial position of each shifting magnetic field is complementary to be arranged.
Magnet in each target position arranges certain initial position, and magnet initial position and starting fortune in each target position
Dynamic direction is complementary in whole workpiece environment.If the target position for arranging is even numbers, in each target position, magnet is formed and is moved
The initial position of moving field can be complementary two-by-two；If the target position for arranging is two or more odd number, moving
Ensure that during Movement in Magnetic Field that each target position determines initial bit on the premise of remaining complementation each other
Put.
Specifically, adjust each variable parameter and magnet is caused during the motion of relative target, it is ensured that workpiece is passed through
Cross each magnet relative position during shifting magnetic field constant, in the cycle, still keep complementary movement.
During the power invariability that reference Fig. 2 and Fig. 7, Fig. 2 are provided for the present invention, the flow process of magnetically controlled sputter method is shown
It is intended to, magnetically controlled sputter method and the magnet movement track schematic diagram of device that Fig. 7 is provided for the present invention.Magnet
Variable parameter present in motion process includes：First Speed of the workpiece through shifting magnetic field, magnet are back and forth transported
Dynamic second speed, the spacing between magnet reciprocating cycle and adjacent target position.If First Speed is
V1If second speed is V2, and magnet once the reciprocating cycle is set to T, the spacing between target position sets
For D, the thickness after the speed of workpiece relative movement Movement in Magnetic Field is set to V and workpiece plated film is set to d.
S50：During power invariability, adjusting correlated variables parameter makes shifting magnetic field keep complementary movement.
In the case of power invariability in magnet reciprocatory movement, adjust correlated variables parameter and ensure that magnet exists
In the range of whole shifting magnetic field, relative position is constant, keeps complementary movement.
Assume that shifting magnetic field A ' of the workpiece through target position A, magnet are transported along target center to target rim
Dynamic, i.e., magnet has moved a quarter cycle, in the process, magnet in a first direction with respect to target
Identical with the direction of motion of workpiece, therefore the speed of workpiece relative movement Movement in Magnetic Field is First Speed and second
The difference of speed；Magnet is turned back when reaching target rim and passes through target center and moves to offside edge, i.e. magnet
Two/a cycle has been moved in a second direction with respect to target, now, magnet and workpiece motion s direction phase
Instead, the speed of workpiece relative movement Movement in Magnetic Field is First Speed and second speed sum；Magnet reaches another
Turn back after the target rim of side and return to target center, i.e., magnet has moved four points in a first direction again with respect to target
A cycle, magnet is identical again with the direction of motion of workpiece, the speed of workpiece relative movement Movement in Magnetic Field
For First Speed and the difference of second speed.Referring to Fig. 5 a, the thickness of workpiece plated film is because workpiece is by the target position
During shifting magnetic field speed speed change and uneven, when magnet is identical with workpiece motion s direction, the thickness of workpiece is big
The thickness of workpiece when magnet is in opposite direction with workpiece motion s.
Magnet within 0-T/4, V=V1-V2；
Magnet within T/4-3T/4, V=V1+V2；
Magnet within 3T/4-T, V=V1-V2.
, when the shifting magnetic field B ' of another target position B, the magnet in the target position is with respect to its target for the workpiece
Movement locus is complementary with the movement locus of above-mentioned magnet, i.e., in first a quarter cycle, magnet is in second party
The direction of motion of target rim, magnet and workpiece is moved up to conversely, therefore workpiece relative movement magnetic field is transported
Dynamic speed is First Speed and second speed sum；Relative target has moved two to magnet in a first direction again
/ a cycle, now, magnet is identical with workpiece motion s direction, the speed of workpiece relative movement Movement in Magnetic Field
Spend the difference with second speed for First Speed；Magnet is turned back after reaching another target rim and returns to target center,
I.e. magnet has been moved a quarter cycle in a second direction again with respect to target, the motion side of magnet and workpiece
To again conversely, the speed of workpiece relative movement Movement in Magnetic Field is First Speed and second speed sum.Referring to
Fig. 5 b, when magnet is identical with workpiece motion s direction, the thickness of workpiece is in opposite direction with workpiece motion s more than magnet
When workpiece thickness, and complementary with the thickness formed when the A ' of shifting magnetic field.
Magnet within 0-T/4, V=V1+V2；
Magnet within T/4-3T/4, V=V1-V2；
Magnet within 3T/4-T, V=V1+V2.
Space D between target position A and target position B must is fulfilled for D/V1=T/2+nT, V1=2D/ (2n+1) T, its
Middle n=0,1,2 ..., now, on workpiece, the thickness of every bit is equal to d1+d2.
Therefore, in the case where power is certain, the uniformity of thickness is not had with the size of the second speed of magnet
Relation, the only First Speed V with workpiece motion s1, space D between target position and magnet period of motion T
Three variables are relevant, and which must is fulfilled for：
As shown in Fig. 2 when shifting magnetic field power certain in the case of, adjustment variable parameter First Speed,
Away from and the size in cycle meet above-mentioned relation.
S501：When First Speed is constant, spacing should be with workpiece in 1/2nd cycles interior distance that passes through
Odd-multiple is equal.
One preferred embodiment is provided, when First Speed is constant, adjusts spacing and cycle, by formulaCalculating is measurable, and the length and workpiece for making spacing is passed through in two/a cycle
When the odd-multiple of distance is equal, each target position shifting magnetic field keeps complementary in the case of power invariability.
S502：During constant gap, spacing should be with workpiece in 1/2nd cycle of the half interior distance that passes through
Odd-multiple is equal.
One preferred embodiment is provided, when constant gap, adjusts First Speed and cycle, by formulaCalculate measurable, make the length of the spacing and the workpiece within 1/2nd cycles
Through distance odd-multiple equal when each target position shifting magnetic field keep complementary in the case of power invariability.
S503：During constant period, the odd number of the distance that spacing should be passed through within 1/2nd cycles with workpiece
Equal again.
One preferred embodiment is provided, when constant period, adjusts First Speed and spacing, by formulaCalculating is measurable, and the length and workpiece for making spacing is passed through in two/a cycle
When the odd-multiple of distance is equal, each target position shifting magnetic field keeps complementary in the case of power invariability.
In the case of the power invariability of shifting magnetic field, measurable spacing, First Speed are calculated by above-mentioned formula
And the relation between these three variables of cycle, it is complementary that adjusting parameter variable value is allowed to meet shifting magnetic field.
With reference to Fig. 3, schematic flow sheets of the Fig. 3 for the power that the present invention is provided magnetically controlled sputter method when non-constant.
S60：When power is non-constant, adjusting correlated variables parameter makes shifting magnetic field keep complementary movement.
In the case of the shifting magnetic field power of formation is inconstant in magnet reciprocatory movement, correlated variables is adjusted
Parameter ensures that magnet relative position in the range of the whole shifting magnetic field is constant, keeps complementary movement.Magnet is reciprocal
In motion process, power that magnet is moved in the first direction is the first power, and magnet is moved in a second direction
Power is the second power, and the first power is different from the second power.
S70：When magnet is respectively in the first direction and when second direction is moved, judge thickness and power, first
Relation between speed and second speed.
As speed of the power with workpiece relative movement magnetic field is inversely proportional to, with magnetron sputtering formed thickness into just
Than therefore power can be expressed as with the relation of thickness：P=kd/V, d=kpV, wherein p represent mobile magnetic
The power of field, d represent that thickness, V represent that the speed in workpiece relative movement magnetic field and k represent constant.
When magnet is moved in the first direction, when identical with workpiece direction of transfer：d1=kp1V=kp1(V1-V2)；
When magnet is moved in a second direction, during with workpiece direction of transfer：d2=kp2V=kp2(V1+V2).
S80：The ratio of the first power and second power is equal to First Speed and second speed sum compares the
The uniform film thickness during difference of one speed and second speed.
Ensure the uniform film thickness of workpiece magnetron sputtering, that is, ensure d1=d2, by thickness and shifting magnetic field work(
Corresponding relation between the speed in rate and workpiece relative movement magnetic field is derived and is understood：The power of shifting magnetic field must
P must be met1/p2=(V1+V2)/(V1-V2).
The ratio that measurable first power and the second power are calculated by above-mentioned formula meets First Speed and
Two speed sums than First Speed and second speed difference when workpiece being capable of uniform coated.
Above-mentioned numerous embodiments may be implemented in and lift plating film uniformity while increasing target utilization
Technique effect.As the corresponding shifting magnetic field of each target position is mutually complementary in sputter procedure, therefore no matter move
Moving field movement velocity speed advantageously ensures that work all without impacting to the film thickness uniformity of workpiece plated film
Part coating quality and rate of reducing the number of rejects and seconds.
The embodiment of the present invention additionally provides a kind of magnetic control sputtering device of the above-mentioned magnetically controlled sputter method of application.The magnetic
Control sputter equipment includes that at least two target position 100, connecting gear 200, the first drive mechanism (are not shown in figure
Go out) and the second drive mechanism (not shown)；Arrange at least two and there is target 101 and magnet 102
Target position, target 101 be rectangle target, its width is at least above 102 width of magnet, two neighboring target position
Between have at regular intervals, target 101 is fixed on target position 100, and the relatively corresponding target of magnet 102
Material 101 is moved with second speed and to form shifting magnetic field and shifting magnetic field there is certain power；First drive mechanism
At least one end with device is set, and connecting gear 200 is layed in the lower section of target position 100, and workpiece 300 is placed
In 200 upper surface of connecting gear, the first drive mechanism drives connecting gear 200, and connecting gear 200 is with the
One speed at the uniform velocity conveying work pieces 300 pass through shifting magnetic field, and the direction of motion of connecting gear 200 is first direction,
It is second direction in the opposite direction with first party.Second drive mechanism promotes the motion of magnet to be defined to back and forth
Formula is moved, and is allowed magnet 102 to move to offside from the side in 101 plane width direction of target, and is returned to again
Initial side, back and forth not oneself.That is the second drive mechanism driving magnet 102 is in the range of the target 101 first
Move back and forth between direction and second direction.Second drive mechanism can also adopt following form：Air rammer,
Push rod system drive, with compressed air as power source, with the control motion commutation of the electrical installations such as the time relay；
Motor-gear-rack system drives, and by electrical installations such as the time relays, controlled motor rotating, by tooth
Wheel rotating, drags tooth bar dealing movement；Driven using linear induction motor system etc..Magnet 102 is completed once
The reciprocating time is a cycle；The initial position of shifting magnetic field is complementary to be arranged.
Above-mentioned magnet 102 be able to can have with channel-shaped rectangular magnet seat and armature composition magnet assembly, the armature
There is the magnet positioning shallow slot on the long side of three Parallel Rectangulars, above-mentioned magnet 102 can be square or square-section
Strip magnetic patch, by polylith magnet 102 along above-mentioned armature magnet positioning shallow slot splicing line up three row, i.e. armature with
Three row magnets constitute " mountain " font structure, and a magnetic pole of magnet 102 is attracting with armature, the magnet of same column
Polarity is identical, 102 opposite polarity of magnet of adjacent two row；Armature loads magnet together with three row magnets 102
Fixed in seat slot.In addition to this kind of three row magnet combination structure, using two row magnets 102 or can also be more than
Three row magnets, 102 combining structure, 102 polarity of same column magnet are identical, and 102 polarity of magnet of adjacent two row
On the contrary.
The structural representation of one preferred embodiment of magnetic control sputtering device provided for the present invention with reference to Fig. 4, Fig. 4,
As a preferred embodiment, two target position 100, the first target position 103 are set in magnetic control sputtering device in figure
With the second target position 104, and the initial position that the relative target 101 of magnet 102 moves the shifting magnetic field for being formed is mutual
Mend, i.e., the initial position of shifting magnetic field when the first target position 103 delivered to by same workpiece 300 and deliver to the second target
The initial position difference half period of shifting magnetic field during position 104.The movement locus of magnet 102 be oa →
Ao → ob → bo or bo → oa → ao → ob etc. back and forth movement.
Shown device in further instruction Fig. 4, in 102 reciprocatory movement of magnet in the device：
When power setting is constant, any one of First Speed, spacing and cycle are constant, and in addition two are change
Amount, makes the length of spacing equal with the odd-multiple of the distance that workpiece 300 was passed through within 1/2nd cycles.This
When, the thickness that sputter coating is formed when workpiece 300 can be made to pass through the first target position 103 is passed through with the workpiece 300
The thickness that plated film is formed during the second target position 104 is complementary so that through the workpiece of device above-mentioned two target position 100
300 plated films are uniform；When power is not set as constant, set power that magnet 102 moved in the first direction as
First power, the power that magnet is moved in a second direction is the second power, the first power and the second power not phase
With；The ratio for arranging the first power and the second power compares First Speed equal to First Speed with second speed sum
Difference with second speed.
Reference picture 5a and Fig. 7, Fig. 5 a be magnetic control sputtering device shifting magnetic field initial position shown in Fig. 4 with
Thickness Forming Theory schematic diagram when workpiece is in the same direction, Fig. 7 are the magnetically controlled sputter method that provides of the present invention and device
Magnet movement track schematic diagram, enters near the first target position 103 when workpiece 300 is transmitted by connecting gear 200
The shifting magnetic field for being formed is moved in the same direction in shifting magnetic field, workpiece 300 with 102 relative target of magnet 101, therefore
The speed in 300 relative movement magnetic field of workpiece is the difference of First Speed and second speed, and now thickness is thicker
d1；Transmit with workpiece 300 shifting magnetic field formed when magnet 102 is by 101 edge fold return motion of target
In opposite direction, therefore the speed in 300 relative movement magnetic field of workpiece is First Speed and second speed sum, this
When thickness be relatively thin d2.As shown in Figure 5 a, the thickness of workpiece plated film is with shifting magnetic field cycle movement side
To change and uneven distribution.
Reference picture 5b and Fig. 7, Fig. 5 b be magnetic control sputtering device shifting magnetic field initial position shown in Fig. 4 with
Thickness Forming Theory schematic diagram when workpiece is reverse.When connecting gear 200 transmits workpiece 300 near the second target
Position 104 enters shifting magnetic field, and workpiece 300 moves the shifting magnetic field for being formed with 102 relative target of magnet 101
Reversely, therefore the speed in 300 relative movement magnetic field of workpiece is First Speed and second speed sum, now film
Thick is relatively thin d2；The shifting magnetic field formed when magnet 102 is by 101 edge fold return motion of target and workpiece
300 transmission in opposite direction, therefore the speed in 300 relative movement magnetic field of workpiece is that First Speed is fast with second
Degree sum, now thickness is relatively thin d1.
Reference picture 5a, Fig. 5 b and Fig. 6 understand that Fig. 6 is the magnetic control sputtering device workpiece film shown in Fig. 4
Thick Forming Theory schematic diagram, the shifting magnetic field initial position phase that the first target position 103 is arranged with the second target position 104
Difference half period, i.e. the first target position 103 and 104 shifting magnetic field initial position of the second target position are complementary.Because should
First target position 103 is equal with 104 each variable parameter of the second target position, and therefore workpiece is passing through two targets respectively
Behind position 100, coating film thickness is complementary, reaches d1+d2Thickness, so as to realize uniform film thickness.
Above-mentioned embodiment may be implemented in the technology effect for lifting plating film uniformity while increasing target utilization
Really.As each 100 corresponding shifting magnetic field of target position is mutually complementary in sputter procedure, therefore no matter move
Shifting magnetic field movement velocity speed is advantageously ensured that all without impacting to the film thickness uniformity of workpiece plated film
Workpiece coating quality, rate of reducing the number of rejects and seconds.
The magnetically controlled sputter method for providing for the present invention above and the better embodiment of device, can not be interpreted as
Restriction to rights protection scope of the present invention, those skilled in the art should know, without departing from the present invention
On the premise of design, multiple improvement or replacement can be also done, all of grade is improved or replaced all should be at this
In bright rights protection scope, i.e., the scope of the present invention should be defined by claim.
Claims (10)
1. a kind of magnetically controlled sputter method, it is characterised in that
At least two target position with target and magnet are provided, have between the adjacent target position at regular intervals,
And the relatively described target of the magnet is moved with second speed and to form shifting magnetic field and the shifting magnetic field and have
Certain power；
One is provided with First Speed at the uniform velocity through the workpiece of the shifting magnetic field, the direction of motion of the workpiece is
First direction, direction setting opposite to the first direction are second direction；
The magnet is moved back and forth in the target between the first direction and the second direction, institute
State magnet the reciprocating time is completed once for a cycle；
The initial position of the shifting magnetic field of each target position is complementary to be arranged.
2. magnetically controlled sputter method as claimed in claim 1, it is characterised in that the magnet is moved back and forth
During the power invariability.
3. magnetically controlled sputter method as claimed in claim 2, it is characterised in that the First Speed is constant,
The spacing and the cycle is adjusted, the length and the workpiece for making the spacing was passed through within 1/2nd cycles
The odd-multiple of the distance that crosses is equal.
4. magnetically controlled sputter method as claimed in claim 2, it is characterised in that the constant gap, adjusts
The whole First Speed and the cycle, make the length of the spacing and the workpiece within 1/2nd cycles
Through distance odd-multiple equal.
5. magnetically controlled sputter method as claimed in claim 2, it is characterised in that the constant period, adjusts
The whole First Speed and the spacing, make the length of the spacing and the workpiece within 1/2nd cycles
Through distance odd-multiple equal.
6. magnetically controlled sputter method as claimed in claim 1, it is characterised in that the magnet is moved back and forth
During, the magnet moves the first power of generation in the first direction, and the magnet moves product in a second direction
Raw second power, and first power is different from second power.
7. magnetically controlled sputter method as claimed in claim 6, it is characterised in that first power and institute
The ratio for stating the second power is First Speed and second speed sum than the difference of First Speed and second speed.
8. a kind of magnetic control sputtering device, it is characterised in that including at least two target position, connecting gear,
One drive mechanism and the second drive mechanism；
At least two target position with target and magnet are set, between having necessarily between the two neighboring target position
Away from the target is fixed on the target position, and the relatively described target of the magnet is with second speed motion shape
Into shifting magnetic field and the shifting magnetic field has certain power；
First drive mechanism is arranged at least one end of described device, and the connecting gear is layed in described
The lower section of target position, the workpiece are positioned over the connecting gear upper surface, and first drive mechanism drives institute
Connecting gear is stated, the connecting gear at the uniform velocity transmits the workpiece through the shifting magnetic field with First Speed,
The direction of motion of the connecting gear is first direction, and direction opposite to the first direction is second party
To；
The magnet is moved back and forth in the target between the first direction and the second direction, institute
State magnet the reciprocating time is completed once for a cycle；
The initial position of the shifting magnetic field of each target position is complementary to be arranged.
9. magnetic control sputtering device as claimed in claim 8, it is characterised in that the magnet is moved back and forth
During, the power setting is constant；
Any one of the First Speed, the spacing and described cycle are constant, and in addition two is variable,
The strange of the distance that the spacing between the target position is passed through within 1/2nd cycles with the workpiece is set
Several times are equal.
10. magnetic control sputtering device as claimed in claim 8, it is characterised in that the magnet is moved back and forth
During, the power is not configured to constant；
The magnet moves the first power of generation in the first direction, and the magnet moves generation the in a second direction
Two power, and first power differed with second power；
The ratio that first power is arranged with second power is equal to First Speed and second speed sum
Than First Speed and the difference of second speed.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107099777A (en) * | 2017-04-27 | 2017-08-29 | 东旭（昆山）显示材料有限公司 | Magnetic control sputtering device and its method |
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| CN107099777A (en) * | 2017-04-27 | 2017-08-29 | 东旭（昆山）显示材料有限公司 | Magnetic control sputtering device and its method |
| CN107099777B (en) * | 2017-04-27 | 2023-06-16 | 东旭（昆山）显示材料有限公司 | Magnetron sputtering device and method thereof |
| CN110629173A (en) * | 2018-06-25 | 2019-12-31 | 北京北方华创微电子装备有限公司 | Magnetron control method, magnetron control device and magnetron sputtering equipment |
| CN114250439A (en) * | 2021-12-13 | 2022-03-29 | 华虹半导体(无锡)有限公司 | Magnetron sputtering method |
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