CN106486289B - A kind of preparation method of POSS modifications CdTe quantum sensitization solar battery - Google Patents
A kind of preparation method of POSS modifications CdTe quantum sensitization solar battery Download PDFInfo
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- 229910004613 CdTe Inorganic materials 0.000 title claims abstract description 153
- 230000004048 modification Effects 0.000 title claims abstract description 47
- 238000012986 modification Methods 0.000 title claims abstract description 47
- 206010070834 Sensitisation Diseases 0.000 title claims abstract description 23
- 230000008313 sensitization Effects 0.000 title claims abstract description 23
- 238000002360 preparation method Methods 0.000 title claims abstract description 22
- 239000002096 quantum dot Substances 0.000 claims abstract description 45
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N titanium dioxide Inorganic materials O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims abstract description 42
- 239000000843 powder Substances 0.000 claims abstract description 30
- 238000000034 method Methods 0.000 claims abstract description 13
- 239000008346 aqueous phase Substances 0.000 claims abstract description 9
- 238000010992 reflux Methods 0.000 claims abstract description 9
- 239000000243 solution Substances 0.000 claims description 62
- 238000000746 purification Methods 0.000 claims description 18
- 239000004408 titanium dioxide Substances 0.000 claims description 16
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 14
- 239000003792 electrolyte Substances 0.000 claims description 11
- 238000003756 stirring Methods 0.000 claims description 8
- 229910004273 TeO3 Inorganic materials 0.000 claims description 6
- 239000007864 aqueous solution Substances 0.000 claims description 6
- 239000007822 coupling agent Substances 0.000 claims description 6
- 239000002243 precursor Substances 0.000 claims description 5
- 238000005119 centrifugation Methods 0.000 claims description 3
- 238000001035 drying Methods 0.000 claims description 3
- 238000012869 ethanol precipitation Methods 0.000 claims description 2
- 238000006243 chemical reaction Methods 0.000 abstract description 10
- 230000006798 recombination Effects 0.000 abstract description 4
- 238000005215 recombination Methods 0.000 abstract description 4
- 230000007547 defect Effects 0.000 abstract description 3
- 239000003504 photosensitizing agent Substances 0.000 abstract description 3
- 229960005196 titanium dioxide Drugs 0.000 description 14
- 235000010215 titanium dioxide Nutrition 0.000 description 14
- PWKSKIMOESPYIA-BYPYZUCNSA-N L-N-acetyl-Cysteine Chemical compound CC(=O)N[C@@H](CS)C(O)=O PWKSKIMOESPYIA-BYPYZUCNSA-N 0.000 description 11
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 6
- 229910018557 Si O Inorganic materials 0.000 description 4
- 229910002808 Si–O–Si Inorganic materials 0.000 description 4
- 238000002347 injection Methods 0.000 description 4
- 239000007924 injection Substances 0.000 description 4
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Inorganic materials [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 4
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 4
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- 238000005033 Fourier transform infrared spectroscopy Methods 0.000 description 2
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- JBOIAZWJIACNJF-UHFFFAOYSA-N 1h-imidazole;hydroiodide Chemical group [I-].[NH2+]1C=CN=C1 JBOIAZWJIACNJF-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
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- KOUKXHPPRFNWPP-UHFFFAOYSA-N pyrazine-2,5-dicarboxylic acid;hydrate Chemical compound O.OC(=O)C1=CN=C(C(O)=O)C=N1 KOUKXHPPRFNWPP-UHFFFAOYSA-N 0.000 description 1
- 239000007784 solid electrolyte Substances 0.000 description 1
- 229910052950 sphalerite Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/20—Light-sensitive devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/20—Light-sensitive devices
- H01G9/2054—Light-sensitive devices comprising a semiconductor electrode comprising AII-BVI compounds, e.g. CdTe, CdSe, ZnTe, ZnSe, with or without impurities, e.g. doping materials
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/80—Constructional details
- H10K30/81—Electrodes
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/542—Dye sensitized solar cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
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Abstract
The invention discloses the preparation methods that a kind of POSS modifies CdTe quantum sensitization solar battery.This method is to prepare CdTe quantum powder using Aqueous phase condensing reflux；Then POSS is modified to CdTe quantum surface, the CdTe quantum after being modified using POSS is assembled into quantum dot sensitized solar cell as photosensitizer.This method is a kind of preparation method of the OA POSS modification CdTe quantum sensitization solar batteries of simple possible, solves the problems, such as that electron-hole recombinations are serious between quantum dot stability difference and light anode and quantum dot interface.In CdTe quantum surface modification OA POSS, the photoelectric characteristic of CdTe quantum can be changed, be effectively passivated quantum dot, reduce the defect of quantum dot surface, increase the stability of quantum dot so that electronics is more effectively injected into TiO2In, and then improve the photoelectric conversion efficiency and stability of quantum dot sensitized solar cell.
Description
Technical field
The invention belongs to area of solar cell, specifically a kind of POSS modifications CdTe quantum sensitization solar battery
Preparation method.
Background technology
Solar energy have the characteristics that take endless, green cleaning, be solve facing mankind energy and environmental problem reason
The new green power thought.In Solar use, safe and reliable, noiseless, pollution-free, energy be everywhere with it for solar cell
The advantages that can obtaining and be concerned.Quantum dot sensitized solar cell is third generation novel solar battery, with its theoretical transformation
Efficiency is up to 66% and is referred to as the solar cell of most research potential, while quantum dot sensitized solar cell has uniqueness
Multiple exciton effect, the advantages such as cheap and manufacture craft is simple.Wherein quantum dot has many unique as light capture agent
The particle size of advantage, quantum dot can be by changing synthesis condition control, to realize the regulation and control to absorption spectrum ranges；Amount
Son point has larger extinction coefficient, can absorb a large amount of photon；There are multiple exciton effects for quantum dot, can improve solar-electricity
The photoelectric current and photoelectric conversion efficiency in pond.
Currently, the photoelectric conversion efficiency of quantum dot sensitized solar cell is relatively low, therefore prepare high conversion efficiency and height is steady
Qualitative quantum dot sensitized solar cell becomes the common objective of researcher.The type and size of optimization quanta point material,
The selection of electrode conductance, the surface treatment to electrode material and electrolyte are all to improve quantum dot sensitized solar cell to turn
Change the feasible method of efficiency.
POSS is the abbreviation of polyhedral oligomeric silsesquioxane, it is a kind of nanometer including organic-inorganic hybrid structure
Material, inorganic framework are the cage structure being made of Si-O-Si keys, the upper organic substituent groups with multiple functions of Si.
Organic group in POSS can be as the active site of further functionalization, and the Si-O-Si cage structures of rigidity enhance
Thermal stability, the hot mechanicalness of POSS, the advantageous properties such as anti-oxidant and corrosion resistance of POSS, POSS have been used for giving birth in addition
The multiple fields such as object, medicine, photoelectric device (M.Liras, J.Mater.Chem., 2011,21,12803-12811.).Currently,
POSS is improving graphene nanometer sheet, Au (POSS-Au composite nanometer particles) and Pd as a kind of high performance coating material
It is applied in the stability of nano particle, but the research as quantum dot surface dressing agent is also fewer at present.Wang Zhongsheng
The POSS of eight iodonium imidazolide salts groups will be modified Deng (Z.S.Wang, Chem.COAmun., 2014,50,1685-1687.)
(POSS-8EsPImI) solid electrolyte being used as in solid-state dye sensitized solar cell, since the Si-O keys in POSS are made
With POSS-8EsPImI is in TiO2There is good wetability on surface, therefore can be in TiO2Good attachment and filling are realized in surface,
To effectively increase the transfer efficiency (7.11%) of the battery, which also has under the long-term irradiation of one times of sun light intensity
Good stability.There is presently no it as the document report in terms of solar cell photosensitizer.
Invention content
In view of the deficiencies of the prior art, the technical issues of present invention intends to solve is to provide a kind of POSS modifications CdTe quantum
The preparation method of point sensitization solar battery.This method is to modify POSS to CdTe quantum surface, after being modified using POSS
CdTe quantum be assembled into quantum dot sensitized solar cell as photosensitizer.This method can change CdTe quantum
Photoelectric characteristic reduces the defect of quantum dot surface, increases the stability of quantum dot so that electronics is more effectively injected into TiO2
In, and then improve the photoelectric conversion efficiency and stability of quantum dot sensitized solar cell.
The technical solution that the present invention solves the technical problem is to provide a kind of POSS modifications CdTe quantum sensitization sun
The preparation method of energy battery, it is characterised in that include the following steps：
(1) preparation of CdTe quantum：CdTe quantum powder is prepared using Aqueous phase condensing reflux；
(2) POSS modifies CdTe quantum：Step 1) is obtained into CdTe quantum powder and is configured to CdTe quantum solution,
Coupling agent EDC is added in CdTe quantum solution and stirs 30-60min, wherein molar ratio CdTe：EDC=1:50-1000；
Then it is 1 that the molar ratio of 4-6h, wherein CdTe and OA-POSS are stirred at room temperature after addition OA-POSS solution:10-1000；Purification
Afterwards, OA-POSS modification CdTe quantum powder is obtained；
(3) assembling of quantum dot sensitized solar cell：The OA-POSS that step 2) is obtained modifies CdTe quantum powder
It is configured to OA-POSS modification CdTe quantum solution and adjusts pH value to 9-11；Then TGA, TGA and OA-POSS modification is added
The volume ratio of CdTe quantum solution is 1:100-500；Titanium dioxide photo anode is immersed in OA-POSS and modifies CdTe quantum
12-36 hours in solution；Then be assembled into sandwich structure with to electrode CuS, and titanium dioxide photo anode with to electrode CuS it
Between inject sulphion electrolyte, formed OA-POSS modify CdTe quantum sensitization solar battery.
Aqueous phase condensing reflux described in step 1) prepare CdTe quantum powder specific method be：NAC is dissolved in
In water, stirred at room temperature to uniformly mixed；Then CdCl is added2Solution obtains containing Cd2+Precursor solution；It is added after stirring
Excessive KBH4, Na is then added2TeO3Aqueous solution is stirred at room temperature to transparent uniform solution；Then the pH value of adjustment solution is
9-11.5；It is heated under conditions of 90-100 DEG C again, the CdTe quantum of different-grain diameter, wherein molar ratio NAC/ is prepared
Cd2+/Te2-=1.2:1:0.2；After purification, CdTe quantum powder is obtained.
The method of purification is：By CdTe quantum by ethanol precipitation after, centrifugation purification is carried out in centrifuge, is then put
40 DEG C -80 DEG C dry 1-48h in drying box.
Compared with prior art, advantageous effect of the present invention is：
(1) this method is a kind of preparation side of the OA-POSS modification CdTe quantum sensitization solar batteries of simple possible
Method solves the problems, such as that electron-hole recombinations are serious between quantum dot stability difference and light anode and quantum dot interface.In CdTe quantum
Point surface modification OA-POSS, can change the photoelectric characteristic of CdTe quantum, effectively be passivated quantum dot, reduce quantum dot surface
Defect, increase the stability of quantum dot so that electronics is more effectively injected into TiO2In, and then improve the quantum dot sensitized sun
The photoelectric conversion efficiency and stability of energy battery.
(2) due to having modified OA-POSS in quantum dot surface, the Si-O inorganic cores in OA-POSS play non-this method
Often good Steric stabilization, and electrolyte molecule easily can reach TiO by Si-O cage structures2Surface, incrementss
While son point stability, TiO is realized2Interface modification between light anode and CdTe quantum effectively reduces charge recombination, increases
Light induced electron is added to inject TiO2The injection efficiency and collection efficiency of photo-anode film, improve quantum dot sensitized solar cell
Photoelectric current and photoelectric conversion efficiency.
Description of the drawings
Fig. 1 is the CdTe amounts for the preparation method embodiment 1 that POSS of the present invention modifies CdTe quantum sensitization solar battery
Son point modifies front and back and POSS Fourier Transform Infrared Spectroscopy figure；
Fig. 2 is the OA-POSS for the preparation method embodiment 1 that POSS of the present invention modifies CdTe quantum sensitization solar battery
Transmission plot after modification CdTe quantum；
Fig. 3 is the CdTe amounts for the preparation method embodiment 1 that POSS of the present invention modifies CdTe quantum sensitization solar battery
The J-V curves of the front and back battery of son point modification；
Fig. 4 is the CdTe amounts for the preparation method embodiment 1 that POSS of the present invention modifies CdTe quantum sensitization solar battery
The electrochemical alternate impedance spectrum of the front and back battery of son point modification；
Specific implementation mode
Specific embodiments of the present invention are given below.Specific embodiment is only used for that present invention be described in more detail, unlimited
The application scope of the claims processed.
The present invention provides the preparation methods that a kind of POSS modifies CdTe quantum sensitization solar battery, it is characterised in that
Include the following steps：
(1) preparation of CdTe quantum：CdTe quantum is prepared using Aqueous phase condensing reflux；By NAC (N- acetyl-L-
Cysteine) it is dissolved in the water, it is stirred at room temperature to uniformly mixed；Then CdCl is added2Solution obtains containing Cd2+Presoma
Solution；Excess KBH is added after being vigorously stirred4, Na is added dropwise immediately after2TeO3Aqueous solution is stirred at room temperature to transparent uniform
Solution；Then it is 9-11.5 to adjust the pH value of solution with NaOH solution；It heats, is prepared under conditions of 90-100 DEG C again
The CdTe quantum of different-grain diameter, wherein molar ratio NAC/Cd2+/Te2-=1.2:1:0.2；After purification, CdTe quantum is obtained
Powder；
(2) POSS modifies CdTe quantum：CdTe quantum is modified using OA-POSS；Step 1) is obtained into CdTe quantum
Point powder is dissolved in water and is configured to CdTe quantum solution, and coupling agent EDC is added in CdTe quantum solution and stirs 30-
60min, wherein molar ratio CdTe：EDC=1:50-1000；Then 4-6h is stirred at room temperature after OA-POSS solution being added, makes OA-
POSS is fully modified on CdTe quantum surface, and the molar ratio of wherein CdTe and OA-POSS are 1:10-1000；After purification,
Obtain OA-POSS modification CdTe quantum powder；
(3) assembling of quantum dot sensitized solar cell：The OA-POSS that step 2) is obtained modifies CdTe quantum powder
Water is dissolved in be configured to OA-POSS modification CdTe quantum solution and adjust pH value to 9-11 with NaOH solution；Then TGA is added
(thioacetic acid) is used as molecular linkers, and the volume ratio of TGA and OA-POSS modification CdTe quantum solution is 1:100-500；It will
Titanium dioxide photo anode is immersed in OA-POSS modification CdTe quantum solution 12-36 hours, and OA-POSS is modified CdTe by TGA
Quantum dot is connected to titanium dioxide photo anode surface；Then sandwich structure, and titanium-dioxide photo sun are assembled into to electrode CuS
Pole and the injection sulphion electrolyte between electrode CuS form OA-POSS and modify CdTe quantum sensitization solar battery.
The method of purification is in order to remove the Excess reagents and by-product in reaction process, by CdTe quantum by ethyl alcohol
After precipitation, centrifugation purification is carried out in centrifuge, is then placed on 40 DEG C -80 DEG C dry 1-48h in drying box.
Embodiment 1
(1) preparation of CdTe quantum：CdTe quantum is prepared using Aqueous phase condensing reflux；NAC is dissolved in the water,
It is stirred at room temperature to uniformly mixed；Then CdCl is added2Solution obtains containing Cd2+Precursor solution；It was added after being vigorously stirred
Measure KBH4, Na is then added2TeO3Aqueous solution is stirred at room temperature to transparent uniform solution；Then the pH value of solution is adjusted extremely
11；It is heated under conditions of 100 DEG C again, the CdTe quantum of different-grain diameter, wherein molar ratio NAC/Cd is prepared2+/Te2-
=1.2:1:0.2；After purification, CdTe quantum powder is obtained；
(2) POSS modifies CdTe quantum：CdTe quantum is modified using OA-POSS；Step 1) is obtained into CdTe quantum
Point powder is dissolved in water and is configured to CdTe quantum solution, and coupling agent EDC is added in CdTe quantum solution and stirs 30min,
Wherein molar ratio CdTe：EDC=1:500；4h is stirred at room temperature after OA-POSS solution is added, makes OA-POSS in CdTe quantum table
Face is fully modified, and the molar ratio of wherein CdTe and OA-POSS are 1:10；After purification, OA-POSS modification CdTe quantum are obtained
Point powder；
(3) assembling of quantum dot sensitized solar cell：The OA-POSS that step 2) is obtained modifies CdTe quantum powder
Water is dissolved in be configured to OA-POSS modification CdTe quantum solution and adjust pH value to 10；Then TGA, TGA and OA-POSS is added
Modify the volume ratio 1 of CdTe quantum solution:300；It is molten that titanium dioxide photo anode is immersed in OA-POSS modifications CdTe quantum
24 hours in liquid, OA-POSS modifications CdTe quantum is connected to titanium dioxide photo anode surface by TGA；Then with to electrode CuS
It is assembled into sandwich structure, and titanium dioxide photo anode and the injection sulphion electrolyte between electrode CuS, forms OA-POSS
Modify CdTe quantum sensitization solar battery.
Test result is as follows for embodiment：
The performance parameter of the front and back battery of CdTe quantum modification in 1 embodiment 1 of table
Fig. 1 is that CdTe quantum modifies front and back and OA-POSS Fourier Transform Infrared Spectroscopy figure, by OA-
In the CdTe quantum of POSS modifications, in 1123cm-1And 1030cm-1The feature that the absorption peak at place is respectively belonging to Si-O-Si is inhaled
The vibration with the cage modle skeleton structure of Si-O-Si is received, and there is no this characteristic absorptions without the CdTe quantum of modification, it was demonstrated that
Successful modifications of the OA-POSS to quantum dot.
Fig. 2 is the transmission picture after OA-POSS modification quantum dots, and as can be seen from the figure quantum dot is subsphaeroidal,
Particle diameter distribution is more uniform, has preferable monodispersity.Upper right corner illustration is quantum dot partial enlarged view, it can be seen that quantum dot
Lattice fringe it is apparent, fringe spacing is 0.36nm, correspond to cubic sphalerite structure CdTe quantum (111) face, and
And quantum dot crystallinity is preferable.
Fig. 3 and table 1 are respectively the J-V curves of the front and back battery of CdTe quantum modification and performance parameter, test condition are
AM1.5 intensities of illumination 100mW/cm2It carries out, it is short by comparing it is found that the open-circuit voltage of battery is increased to 0.56V by 0.53V
Road electric current is by 4.4mA/cm2It is increased to 6.2mA/cm2, the electricity conversion of battery is increased to 1.87% by original 1.17%,
Improve 60%.
Fig. 4 is the electrochemical alternate impedance spectrum of the front and back battery of CdTe quantum modification, and two semicircles correspond respectively to height
Frequency part is to the charge transfer process (R in electrode/electrolyte interface and electrolyte1, small semicircle), low frequency part TiO2/ quantum
Point/electrolyte interface and TiO2Charge transfer process (R in film2, large semicircle), the upper left corner is equivalent-circuit model in figure.It is logical
Cross compare it is found that OA-POSS modification CdTe quantum sensitization solar battery resistance value it is larger, so inside battery have compared with
Few charge recombination, while electrolyte molecule easily can reach TiO by Si-O cage structures2Surface increases quantum dot
While stability, TiO is realized2Interface modification between light anode and CdTe quantum improves quantum dot sensitized solar energy
The photoelectric current and photoelectric conversion efficiency of battery.
Embodiment 2
(1) preparation of CdTe quantum：CdTe quantum is prepared using Aqueous phase condensing reflux；NAC is dissolved in the water,
It is stirred at room temperature to uniformly mixed；Then CdCl is added2Solution obtains containing Cd2+Precursor solution；It was added after being vigorously stirred
Measure KBH4, Na is then added2TeO3Aqueous solution is stirred at room temperature to transparent uniform solution；Then the pH value of adjustment solution is
10；It is heated under conditions of 100 DEG C again, the CdTe quantum of different-grain diameter, wherein molar ratio NAC/Cd is prepared2+/Te2-
=1.2:1:0.2；After purification, CdTe quantum powder is obtained；
(2) POSS modifies CdTe quantum：CdTe quantum is modified using OA-POSS；Step 1) is obtained into CdTe quantum
Point powder is dissolved in water and is configured to CdTe quantum solution, and coupling agent EDC is added in CdTe quantum solution and stirs 40min,
Wherein molar ratio CdTe：EDC=1:200；Then 4h is stirred at room temperature after OA-POSS solution being added, makes OA-POSS in CdTe quantum
Point surface is fully modified, and the molar ratio of wherein CdTe and OA-POSS are 1:50；After purification, OA-POSS modifications CdTe is obtained
Quantum dot powder；
(3) assembling of quantum dot sensitized solar cell：The OA-POSS that step 2) is obtained modifies CdTe quantum powder
It is dissolved in water to be configured to OA-POSS modification CdTe quantum solution and adjust pH value to 10, TGA is added as molecular linkers, TGA
The volume ratio that CdTe quantum solution is modified with OA-POSS is 1:100；Titanium dioxide photo anode is immersed in OA-POSS modifications
24 hours in CdTe quantum solution, OA-POSS modifications CdTe quantum is connected to titanium dioxide photo anode surface by TGA；So
Afterwards sandwich structure, and titanium dioxide photo anode and the injection sulphion electrolysis between electrode CuS are assembled into to electrode CuS
Liquid forms OA-POSS and modifies CdTe quantum sensitization solar battery.
Embodiment 3
(1) preparation of CdTe quantum：CdTe quantum is prepared using Aqueous phase condensing reflux；NAC is dissolved in the water,
It is stirred at room temperature to uniformly mixed；Then CdCl is added2Solution obtains containing Cd2+Precursor solution；It was added after being vigorously stirred
Measure KBH4, Na is then added2TeO3Aqueous solution is stirred at room temperature to transparent uniform solution；Then the pH value of adjustment solution is 9；
It is heated under conditions of 100 DEG C again, the CdTe quantum of different-grain diameter, wherein molar ratio NAC/Cd is prepared2+/Te2-=
1.2:1:0.2；After purification, CdTe quantum powder is obtained；
(2) POSS modifies CdTe quantum：CdTe quantum is modified using OA-POSS；Step 1) is obtained into CdTe quantum
Point powder is dissolved in water and is configured to CdTe quantum solution, and coupling agent EDC is added in CdTe quantum solution and stirs 50min,
Wherein molar ratio CdTe：EDC=1:700；Then 4h is stirred at room temperature after OA-POSS solution being added, makes OA-POSS in CdTe quantum
Point surface is fully modified, and the molar ratio of wherein CdTe and OA-POSS are 1:100；After purification, OA-POSS modifications are obtained
CdTe quantum powder；
(3) assembling of quantum dot sensitized solar cell：The OA-POSS that step 2) is obtained modifies CdTe quantum powder
Water is dissolved in be configured to OA-POSS modification CdTe quantum solution and adjust pH value to 10；Then TGA is added to connect as molecule
The volume ratio of agent, TGA and OA-POSS modification CdTe quantum solution is 1:500；Titanium dioxide photo anode is immersed in OA-
POSS is modified in CdTe quantum solution 30 hours, and OA-POSS modifications CdTe quantum is connected to titanium dioxide photo anode by TGA
Surface；Then be assembled into sandwich structure with to electrode CuS, and titanium dioxide photo anode and injected between electrode CuS sulphur from
Sub- electrolyte forms OA-POSS and modifies CdTe quantum sensitization solar battery.
The present invention does not address place and is suitable for the prior art.
Claims (3)
1. a kind of preparation method of OA-POSS modifications CdTe quantum sensitization solar battery, it is characterised in that including following step
Suddenly：
(1) preparation of CdTe quantum：CdTe quantum powder is prepared using Aqueous phase condensing reflux；
(2) OA-POSS modifies CdTe quantum：Step 1) is obtained into CdTe quantum powder and is configured to CdTe quantum solution,
Coupling agent EDC is added in CdTe quantum solution and stirs 30-60min, wherein molar ratio CdTe：EDC=1:50-1000；
Then it is 1 that the molar ratio of 4-6h, wherein CdTe and OA-POSS are stirred at room temperature after addition OA-POSS solution:10-1000；Purification
Afterwards, OA-POSS modification CdTe quantum powder is obtained；
(3) assembling of quantum dot sensitized solar cell：The OA-POSS modification CdTe quantum powder configurations that step 2) is obtained
CdTe quantum solution is modified at OA-POSS and adjusts pH value to 9-11；Then TGA, TGA and OA-POSS modification CdTe is added
The volume ratio of quantum dot solution is 1:100-500；Titanium dioxide photo anode is immersed in OA-POSS and modifies CdTe quantum solution
It is 12-36 hours middle；Then be assembled into sandwich structure with to electrode CuS, and titanium dioxide photo anode with to electrode CuS it
Between inject sulphion electrolyte, formed OA-POSS modify CdTe quantum sensitization solar battery.
2. the preparation method of OA-POSS modifications CdTe quantum sensitization solar battery according to claim 1, feature
Being the specific method that Aqueous phase condensing reflux described in step 1) prepares CdTe quantum powder is：NAC is dissolved in the water,
It is stirred at room temperature to uniformly mixed；Then CdCl is added2Solution obtains containing Cd2+Precursor solution；It is added after stirring excessive
KBH4, Na is then added2TeO3Aqueous solution is stirred at room temperature to transparent uniform solution；Then the pH value of adjustment solution is 9-
11.5；It is heated under conditions of 90-100 DEG C again, the CdTe quantum of different-grain diameter, wherein molar ratio NAC/Cd is prepared2+/
Te2-=1.2:1:0.2；After purification, CdTe quantum powder is obtained.
3. the preparation method of OA-POSS modifications CdTe quantum sensitization solar battery according to claim 1, feature
Being the method for purification is：After the OA-POSS that step 2) is obtained modifies CdTe quantum powder by ethanol precipitation, centrifuging
Centrifugation purification is carried out in machine, is then placed on 40 DEG C -80 DEG C dry 1-48h in drying box.
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