A kind of organic compound with dimethylanthracene as core and its application
Technical field
The present invention relates to organic photoelectrical material technical field, especially relate to one kind containing bone centered on dimethylanthracene structure
The compound-material of frame and its application in OLED field.
Background technology
Organic electroluminescent (OLED:Organic Light Emission Diodes) device technology both can be used to make
Make new display product it is also possible to be used for making novel illumination product, be expected to substitute existing liquid crystal display and fluorescent lighting,
Application prospect is quite varied.
OLED luminescent device just as the structure of sandwich, including electrode material film layer, and be clipped in Different electrodes film layer it
Between organic functional material, various difference in functionality materials are overlapped mutually according to purposes and collectively constitute OLED luminescent device together.
As current device, when the two end electrodes applied voltage to OLED luminescent device, and pass through electric field action organic layer functional material
Positive and negative charge in film layer, positive and negative charge is compound in luminescent layer further, that is, produce OLED electroluminescent.
Currently, in smart mobile phone, the field such as panel computer obtains application to OLED Display Technique, further also will be to electricity
Depending on etc. the extension of large scale application, but, require to compare with the products application of reality, the luminous efficiency of OLED, use
The performances such as life-span also need to be lifted further.
High performance research is carried for OLED luminescent device include:Reduce the driving voltage of device, improve the luminous of device
Efficiency, improves service life of device etc..In order to realize the continuous lifting of the performance of OLED, not only need from OLED
Structure and the innovation of processing technology, constantly study with greater need for oled light sulfate ferroelectric functional material and innovate, formulate out higher performance OLED
Functional material.
The oled light sulfate ferroelectric functional material being applied to OLED can be divided into two big class from purposes, i.e. electric charge injection transmission
Material and luminescent material, further, also can inject charge into transmission material and be divided into electron injection transmission material, electronic blocking material
Luminescent material can also be divided into main body luminescent material and dopant material by material, hole injection transmission material and hole barrier materials.
In order to make high performance OLED luminescent device it is desirable to various organic functional material possesses good photoelectric characteristic,
Such as, as charge transport materials it is desirable to have good carrier mobility, high-vitrification conversion temperature etc., as luminous
The material of main part of layer requires material to have good bipolarity, suitable HOMO/LUMO energy rank etc..
The oled light sulfate ferroelectric functional material film layer constituting OLED at least includes the above structure of two-layer, application in industry
OLED structure, then include hole injection layer, hole transmission layer, electronic barrier layer, luminescent layer, hole blocking layer, electronics biography
Multiple film layer such as defeated layer, electron injecting layer is that is to say, that the photoelectric functional material being applied to OLED includes at least hole note
Enter material, hole mobile material, luminescent material, electron transport material etc., material type and collocation form have rich and many
The feature of sample.In addition, for the OLED of different structure is arranged in pairs or groups, the photoelectric functional material that used has stronger
Selectivity, performance in different structure device for the identical material is it is also possible to completely totally different.
Therefore, for the industry application requirement of current OLED, and the difference in functionality film layer of OLED, device
Photoelectric characteristic demand, it is necessary to select to be more suitable for, has high performance OLED functional material or combination of materials, just enables device
The overall characteristic of high efficiency, long-life and low-voltage.For the actual demand that current OLED shows Lighting Industry, current OLED
The development of material is also far from enough, lags behind the requirement of panel manufacturing enterprise, organic as material enterprise development higher performance
Functional material is particularly important.
Content of the invention
The problems referred to above existing for prior art, the applicant provides a kind of organic compound containing dimethylanthracene
And its apply on organic electroluminescence device.The compounds of this invention contains dimethylanthracene structure, has higher vitrification temperature
Degree and molecule heat stability, suitable HOMO and lumo energy, higher Eg, optimized by device architecture, can effectively lift OLED
The photoelectric properties of device and the life-span of OLED.
Technical scheme is as follows:
The applicant provides a kind of organic compound containing dimethylanthracene, the general structure such as formula of described compound
(1) shown in:
Wherein, Ar1、Ar2Independently be expressed as phenyl, xenyl or naphthyl;
R1、R2Independently be expressed as formula (2) or structure shown in formula (3);R1With R2Can be identical or different;R1Also
Hydrogen atom can be expressed as;
Wherein,
R3It is expressed as hydrogen atom, formula (4) or structure shown in formula (5);
In formula (4), a is selected fromX1、X2、X3Independently to be expressed as oxygen former
Son, sulphur atom, C1-10The uncle that the alkylidene of straight or branched alkyl replacement, the alkylidene of aryl replacement, alkyl or aryl replace
One of amido;
Formula (4), structure shown in formula (5) pass through CL1-CL2Key, CL2-CL3Key or CL3-CL4Key is connected with formula (2);
R4、R5Independently be expressed as C1-10Straight or branched alkyl, phenyl, naphthyl, xenyl, formula (6), formula
(7), formula (8) or structure shown in formula (9);R5It is also denoted as hydrogen atom or halogen atom;
Wherein,
X is oxygen atom, sulphur atom, C1-10The alkylidene of straight or branched alkyl replacement, the alkylidene of aryl replacement, alkyl
One of or the tertiary amine groups of aryl replacement;
R7、R8Independently be expressed as phenyl, naphthyl, dibiphenylyl, terphenyl, dibenzofurans, dibenzo thiophene
Fen or 9,9- dimethyl fluorene or carbazole.
Preferably, described R1、R2Being expressed as independently:
In any one.
Preferably, the concrete structure formula of the described organic compound containing dimethylanthracene is:
In
Any one.
The applicant additionally provides a kind of method preparing described organic compound, the reactional equation occurring in preparation process
Formula is:
R1When being expressed as hydrogen atom,
R1Be expressed as formula (2) or formula (3) structure when,
Specifically preparation process is:
Weigh dimethylanthracene bromo-derivative and H-R2Or H-R1With H-R2Mixture, dissolved with toluene;Add Pd2
(dba)3, tri-butyl phosphine, sodium tert-butoxide;Under an inert atmosphere, by the mixed solution of above-mentioned reactant in reaction temperature 95~
110 DEG C, react 10~24 hours, cooling simultaneously filtering reacting solution, filtrate revolving, cross silicagel column, obtain target product;
Described dimethylanthracene bromo-derivative and H-R1And H-R2Mol ratio be respectively 1:1.2~3.0, Pd2(dba)3With diformazan
The mol ratio of base anthracene bromo-derivative is 0.006~0.02:1, the mol ratio of tri-butyl phosphine and dimethylanthracene bromo-derivative is 0.006~
0.02:1, sodium tert-butoxide is 2.0~5.0 with the mol ratio of dimethylanthracene bromo-derivative:1.
The applicant additionally provides a kind of organic electroluminescence device, and described organic electroluminescence device includes at least one of which
Functional layer contains the described organic compound containing dimethylanthracene.
Beneficial the having technical effect that of the present invention:
The compounds of this invention with dimethylanthracene as parent nucleus, connected symmetrical dendrimer or asymmetrical rigid radical, the knot of saboteur
Crystalline substance, it is to avoid intermolecular aggregation, has high vitrification point, and material, when OLED is applied, can keep high
Membranous layer stability, improves OLED service life.
The compounds of this invention structure makes electronics and hole more balance in the distribution of luminescent layer, in appropriate HOMO energy level
Under, improve hole injection/transmission performance;Under suitable lumo energy, serve the effect of electronic blocking again, lift exciton
Combined efficiency in luminescent layer;As OLED luminescent device light emitting functional layer materials'use when, aryl replace dimethyl
The side chain that anthracene is arranged in pairs or groups in the scope of the invention can effectively improve exciton utilization rate and high fluorescent radiation efficiency, reduces under high current density
Efficiency roll-off, reduce device voltage, improve the current efficiency of device and life-span.
The special construction of compound of the present invention designs so that material also has while having high decomposition temperature
Low sublimation temperature or vacuum evaporation temperature, have higher temperature difference window between sublimation temperature or evaporation temperature and decomposition temperature
Mouth, so that material has higher operation controllability in commercial Application, is applied beneficial to material volume production.
Compound of the present invention has good application effect in OLED luminescent device, before having good industrialization
Scape.
Brief description
Materials application cited by the present invention for the Fig. 1 is in the structural representation of OLED;
Wherein, 1 is transparent substrate layer, and 2 is ito anode layer, and 3 is hole injection layer, and 4 is hole transport/electronic barrier layer,
5 is luminescent layer, and 6 is electric transmission/hole blocking layer, and 7 is electron injecting layer, and 8 is negative electrode reflection electrode layer.
Specific embodiment
With reference to the accompanying drawings and examples, the present invention is specifically described.
Embodiment 1:The synthesis of compound 1:
Synthetic route:
In the there-necked flask of 250ml, under logical nitrogen protection, addition 0.01mol raw material A 1,0.012mol raw material B1,
0.03mol sodium tert-butoxide, 5 × 10-5molpd2(dba)3, 5 × 10-5Mol tri-tert phosphorus, 150ml toluene, it is heated to reflux 24 little
When, sample point plate, reaction is completely;Natural cooling, filters, filtrate revolving, column chromatography obtains target product, HPLC purity
98.9%, yield 64.7%;
Elementary analysiss structure (molecular formula C64H45N3):Theoretical value C, 89.79;H,5.30;N,4.91;Test value:C,
89.79;H,5.31;N,4.90.
HPLC-MS:Material molecule amount is 856.06, surveys molecular weight 856.45.
Embodiment 2:The synthesis of compound 3:
Synthetic route:
In the there-necked flask of 250ml, under logical nitrogen protection, addition 0.01mol raw material A 1,0.012mol raw material B2,
0.03mol sodium tert-butoxide, 5 × 10-5mol pd2(dba)3, 5 × 10-5Mol tri-tert phosphorus, 150ml toluene, it is heated to reflux 24
Hour, sample point plate, reaction is completely;Natural cooling, filters, filtrate revolving, column chromatography obtains target product, HPLC purity
99.5%, yield 67.3%;
Elementary analysiss structure (molecular formula C61H48N2):Theoretical value C, 90.56;H,5.98;N,3.46;Test value:C,
90.59;H,5.96;N,3.45.
HPLC-MS:Material molecule amount is 809.05, surveys molecular weight 809.48.
Embodiment 3:The synthesis of compound 11:
Synthetic route:
In the there-necked flask of 250ml, under logical nitrogen protection, addition 0.01mol raw material A 1,0.012mol raw material C1,
0.03mol sodium tert-butoxide, 5 × 10-5mol pd2(dba)3, 5 × 10-5Mol tri-tert phosphorus, 150ml toluene, it is heated to reflux 24
Hour, sample point plate, reaction is completely;Natural cooling, filters, filtrate revolving, column chromatography obtains target product, HPLC purity
99.4%, yield 70.2%;
Elementary analysiss structure (molecular formula C56H40N2):Theoretical value C, 90.78;H,5.44;N,3.78;Test value:C,
90.78;H,5.45;N,3.77.
HPLC-MS:Material molecule amount is 740.93, surveys molecular weight 741.25.
Embodiment 4:The synthesis of compound 16:
Synthetic route:
In the there-necked flask of 250ml, under logical nitrogen protection, addition 0.01mol raw material A 2,0.012mol raw material B3,
0.03mol sodium tert-butoxide, 5 × 10-5mol pd2(dba)3, 5 × 10-5Mol tri-tert phosphorus, 150ml toluene, it is heated to reflux 24
Hour, sample point plate, reaction is completely;Natural cooling, filters, filtrate revolving, column chromatography obtains target product, HPLC purity
99.1%, yield 68.5%;
Elementary analysiss structure (molecular formula C56H39NS):Theoretical value C, 88.74;H,5.19;N,1.85;S,4.23;Test
Value:C,88.73;H,5.20;N,1.86;S,4.21.
HPLC-MS:Material molecule amount is 757.98, surveys molecular weight 758.36.
Embodiment 5:The synthesis of compound 17:
Synthetic route:
By the synthetic method preparation of compound 1 in embodiment 1, difference is to replace raw material B1 with raw material B4;
Elementary analysiss structure (molecular formula C64H52N2):Theoretical value C, 90.53;H,6.17;N,3.30;Test value:C,
90.54;H,6.15;N,3.31.
HPLC-MS:Material molecule amount is 849.11, surveys molecular weight 849.52.
Embodiment 6:The synthesis of compound 24:
Synthetic route:
By the synthetic method preparation of compound 1 in embodiment 1, difference is to replace raw material B1 with raw material C2;
Elementary analysiss structure (molecular formula C59H46N2):Theoretical value C, 90.50;H,5.92;N,3.58;Test value:C,
90.52;H,5.91;N,3.57.
HPLC-MS:Material molecule amount is 783.01, surveys molecular weight 783.39.
Embodiment 7:The synthesis of compound 35:
Synthetic route:
By the synthetic method preparation of compound 1 in embodiment 1, difference is to replace raw material B1 with raw material D1;
Elementary analysiss structure (molecular formula C67H53N3):Theoretical value C, 89.40;H,5.93;N,4.67;Test value:C,
89.43;H,5.92;N,4.65.
HPLC-MS:Material molecule amount is 900.16, surveys molecular weight 900.59.
Embodiment 8:The synthesis of compound 37:
Synthetic route:
By the synthetic method preparation of compound 1 in embodiment 1, difference is to replace raw material B1 with raw material D2;
Elementary analysiss structure (molecular formula C64H52N2O):Theoretical value C, 88.85;H,6.06;N,3.24;O,1.85;Test
Value:C,88.86;H,6.05;N,3.25;O,1.84.
HPLC-MS:Material molecule amount is 865.11, surveys molecular weight 865.48.
Embodiment 9:The synthesis of compound 42:
Synthetic route:
In the there-necked flask of 250ml, under logical nitrogen protection, addition 0.01mol raw material A 3,0.024mol raw material E1,
0.04mol sodium tert-butoxide, 1 × 10-4mol pd2(dba)3, 1 × 10-4Mol tri-tert phosphorus, 250ml toluene, it is heated to reflux 24
Hour, sample point plate, reaction is completely;Natural cooling, filters, filtrate revolving, column chromatography obtains target product, HPLC purity
99.5%, yield 68.9%;
Elementary analysiss structure (molecular formula C68H70N2):Theoretical value C, 89.23;H,7.71;N,3.06;Test value:C,
89.25;H,7.70;N,3.05.
HPLC-MS:Material molecule amount is 915.30, surveys molecular weight 915.78.
Embodiment 10:The synthesis of compound 48:
Synthetic route:
In the there-necked flask of 250ml, under logical nitrogen protection, addition 0.01mol raw material A 4,0.012mol raw material E2,
0.03mol sodium tert-butoxide, 5 × 10-5mol pd2(dba)3, 5 × 10-5Mol tri-tert phosphorus, 250ml toluene, it is heated to reflux 24
Hour, sample point plate, reaction is completely;Natural cooling, filters, filtrate revolving, column chromatography obtains target product, HPLC purity
99.1%, yield 72.7%;
Elementary analysiss structure (molecular formula C58H44N2):Theoretical value C, 90.59;H,5.77;N,3.64;Test value:C,
90.60;H,5.75;N,3.65.
HPLC-MS:Material molecule amount is 768.98, surveys molecular weight 769.31.
Embodiment 11:The synthesis of compound 61:
Synthetic route:
By the synthetic method preparation of compound 1 in embodiment 1, difference is to replace raw material B1 with raw material E3;
Elementary analysiss structure (molecular formula C64H45N3):Theoretical value C, 89.79;H,5.30;N,4.91;Test value:C,
89.80;H,5.30;N,4.90.
HPLC-MS:Material molecule amount is 856.06, surveys molecular weight 856.42.
Embodiment 12:The synthesis of compound 69:
Synthetic route:
By the synthetic method preparation of compound 1 in embodiment 1, difference is to replace raw material B1 with raw material E4;
Elementary analysiss structure (molecular formula C70H57N3):Theoretical value C, 89.42;H,6.11;N,4.47;Test value:C,
89.43;H,6.12;N,4.45.
HPLC-MS:Material molecule amount is 940.22, surveys molecular weight 940.69.
Embodiment 13:The synthesis of compound 72:
Synthetic route:
By the synthetic method preparation of compound 1 in embodiment 1, difference is to replace raw material B1 with raw material E5;
Elementary analysiss structure (molecular formula C64H49N3):Theoretical value C, 89.37;H,5.74;N,4.89;Test value:C,
89.35;H,5.75;N,4.90.
HPLC-MS:Material molecule amount is 860.09, surveys molecular weight 860.51.
The compounds of this invention uses in luminescent device, can be as hole transport/electronic blocking layer material it is also possible to make
For luminescent layer Subjective and Objective materials'use.The compounds of this invention has high operability and practicality, major embodiment in application
For having high glass transition temperature, low sublimation temperature, high decomposition temperature and film forming stability.
The compounds of this invention 17, compound 44, compound 60 and current material CBP are carried out respectively with hot property, luminous light
Spectrum, the test of HOMO energy level, testing result is as shown in table 1.
Table 1
Note:Vitrification point Tg is by differential scanning calorimetry (DSC, German Nai Chi company DSC204F1 differential scanning calorimetry
Instrument) measure, 10 DEG C/min of heating rate;Evaporation temperature is using SUNIC evaporated device, vacuum < 1E-5Pa, material rate
ForWhen evaporation temperature;Thermal weight loss temperature Td is in nitrogen atmosphere weightless 1% temperature, in Japanese Shimadzu Corporation
It is measured on TGA-50H thermogravimetric analyzer, nitrogen flow is 20mL/min;Film forming stability refers to, using SUNIC evaporator
Platform, is deposited with to glass substrate 100nm thickness thin film material, envelope in glove box environment (water oxygen content equal < 1PPm)
Dress, after encapsulation, glass sample under the conditions of double 80 (humidity 80%, 80 DEG C of temperature) places test 240 hours, uses micro- sem observation
The crystal property of sample film;Highest occupied molecular orbital HOMO energy level and minimum occupied molecular orbital lumo energy are by photoelectron
Transmitting spectrometer (AC-2 type PESA) test, tests as atmospheric environment.
From upper table data, the compounds of this invention has adjustable HOMO energy level, is suitable as difference in functionality layer material
Use;Low evaporation temperature can make material in commercial Application, reduces heat radiation to Fine-mask influence of crust deformation in evaporation board,
Improve OLED PPI grade, improve producing line yield;High film forming stability energy, ensure that material is being applied to OLED device
During use after part, keep film morphology, do not formed local-crystalized, cause device electrode short circuit, improving OLED makes
Use the life-span.
The OLED material describing present invention synthesis in detail below by way of device embodiments 1~10 and comparative example 1 is in the devices
Application effect.The making work of device embodiments 2~10 of the present invention, comparative example 1 described device compared with device embodiments 1
Skill is identical, and employed identical baseplate material and electrode material, and the thickness of electrode material is also consistent, and institute is not
Same is that the material of main part of the luminescent layer 5 in device or hole transport/electronic barrier layer are changed.Each embodiment gained device
The performance test results of part are as shown in table 2.
Device embodiments 1
A kind of electroluminescent device, its preparation process includes:
A) the ito anode layer 2 on cleaning transparent substrate layer 1, deionized water, acetone, EtOH Sonicate cleaning each 15 respectively
Minute, then process 2 minutes in plasma cleaner;
B) on ito anode layer 2, hole injection layer material HAT-CN is deposited with by vacuum evaporation mode, thickness is 10nm,
This layer is as hole injection layer 3;
C) on hole injection layer 3, hole mobile material NPB is deposited with by vacuum evaporation mode, thickness is 80nm, this layer
For hole transmission layer/electronic barrier layer 4;
D) it is deposited with luminescent layer 5 on hole transport/electronic barrier layer 4, the compounds of this invention 1 is used as main body
Material, Ir (ppy)3As dopant material, material doped mass ratio is 10%, and thickness is 30nm;
E) on luminescent layer 5, electron transport material TPBI is deposited with by vacuum evaporation mode, thickness is 40nm, this layer
Organic material uses as hole barrier/electron transfer layer 6;
F) on hole barrier/electron transfer layer 6, vacuum evaporation electron injecting layer LiF, thickness is 1nm, and this layer is electricity
Sub- implanted layer 7;
G) on electron injecting layer 7, vacuum evaporation negative electrode Mg:Ag/Ag layer, Mg:Ag doping ratio is 9:1, thickness
15nm, Ag thickness 3nm, this layer is negative electrode reflection electrode layer 8;
Complete the making of electroluminescent device according to above-mentioned steps after, the current efficiency of measurement device and life-span, its result
It is shown in Table 2.
The molecular machinery formula of associated materials is as follows:
Device embodiments 2
The present embodiment is with the difference of device embodiments 1:The luminescent layer material of main part of electroluminescent device is changed into
The compounds of this invention 13, dopant material is Ir (ppy)3, doping mass ratio is 10%, the detection data of gained electroluminescent device
It is shown in Table 2.
Device embodiments 3
The present embodiment is with the difference of device embodiments 1:The luminescent layer material of main part of electroluminescent device is changed into
The compounds of this invention 17, dopant material is Ir (ppy)3, doping mass ratio is 10%, the detection data of gained electroluminescent device
It is shown in Table 2.
Device embodiments 4
The present embodiment is with the difference of device embodiments 1:Hole transport/the electronic barrier layer of electroluminescent device
4 material is changed into the compounds of this invention 35, and the material of main part of luminescent layer 5 is known compound CBP, and dopant material is Ir
(ppy)3, doping mass ratio is 10%, and the detection data of gained electroluminescent device is shown in Table 2.
Device embodiments 5
The present embodiment is with the difference of device embodiments 1:Hole transport/the electronic barrier layer of electroluminescent device
4 material is changed into the compounds of this invention 44, and the material of main part of luminescent layer 5 is known compound CBP, and dopant material is Ir
(ppy)3, doping mass ratio is 10%, and the detection data of gained electroluminescent device is shown in Table 2.
Device embodiments 6
The present embodiment is with the difference of device embodiments 1:Hole transport/the electronic barrier layer of electroluminescent device
4 material is changed into the compounds of this invention 48, and the material of main part of luminescent layer 5 is known compound CBP, and dopant material is Ir
(ppy)3, doping mass ratio is 10%, and the detection data of gained electroluminescent device is shown in Table 2.
Device embodiments 7
The present embodiment is with the difference of device embodiments 1:Hole transport/the electronic barrier layer of electroluminescent device
4 material is changed into the compounds of this invention 60, and the material of main part of luminescent layer 5 is known compound CBP, and dopant material is Ir
(ppy)3, doping mass ratio is 10%, and the detection data of gained electroluminescent device is shown in Table 2.
Device embodiments 8
The present embodiment is with the difference of device embodiments 1:Hole transport/the electronic barrier layer of electroluminescent device
4 material is changed into the compounds of this invention 65, and the material of main part of luminescent layer 5 is known compound CBP, and dopant material is Ir
(ppy)3, doping mass ratio is 10%, and the detection data of gained electroluminescent device is shown in Table 2.
Device embodiments 9
The present embodiment is with the difference of device embodiments 1:The luminescent layer material of main part of electroluminescent device is changed into
The compounds of this invention 61 and compound GHN, dopant material is Ir (ppy)3, the blending mass ratio of three kinds of materials is 60:30:10,
The detection data of gained electroluminescent device is shown in Table 2.
Device embodiments 10
The present embodiment is with the difference of device embodiments 1:The luminescent layer material of main part of electroluminescent device is changed into
The compounds of this invention 69 and compound GHN, dopant material is Ir (ppy)3, the blending mass ratio of three kinds of materials is 60:30:10,
The detection data of gained electroluminescent device is shown in Table 2.
Device comparative example 1
The present embodiment is with the difference of device embodiments 1:The luminescent layer material of main part of electroluminescent device is changed into
Known compound CBP, the detection data of gained electroluminescent device is shown in Table 2.
Table 2
Note:Using device comparative example 1 as reference, comparative example 1 device property indices are set to 1.0 to device detection performance.
The current efficiency of comparative example 1 is 28cd/A (@10mA/cm2);CIE chromaticity coordinates is (0.33,0.63);The LT95 longevity under 5000 brightness
Life decays to 2.5Hr.
Can be seen that the machine compound containing dimethylanthracene structure of the present invention can be applicable to OLED and sends out by the result of table 2
Optical device makes, and compared with comparative example, either efficiency or life-span all ratio known OLED material larger changes of acquisition, special
It is not the larger lifting of the life time decay acquisition of device.
To sum up, the foregoing is only presently preferred embodiments of the present invention, not in order to limit the present invention, all essences in the present invention
Within god and principle, any modification, equivalent substitution and improvement made etc., should be included within the scope of the present invention.