CN106467527B - A kind of organic compound containing dimethylanthracene and its application on OLED - Google Patents

A kind of organic compound containing dimethylanthracene and its application on OLED Download PDF

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CN106467527B
CN106467527B CN201610754481.4A CN201610754481A CN106467527B CN 106467527 B CN106467527 B CN 106467527B CN 201610754481 A CN201610754481 A CN 201610754481A CN 106467527 B CN106467527 B CN 106467527B
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general formula
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organic compound
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CN106467527A (en
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张兆超
李崇
叶中华
张小庆
王立春
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Jiangsu Sunera Technology Co Ltd
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Jiangsu Sanyue Optoelectronic Technology Co Ltd
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Abstract

The invention discloses a kind of organic compound containing dimethylanthracene and its applications on organic electroluminescence device, shown in the structural formula general formula such as general formula (1) of the organic compound.The compounds of this invention glass transition temperature with higher and molecule thermal stability, suitable HOMO and lumo energy, higher Eg are optimized by device architecture, can effectively promote the photoelectric properties of OLED device and the service life of OLED device.

Description

Organic compound containing dimethylanthracene and application of organic compound in OLED
Technical Field
The invention relates to the technical field of organic photoelectric materials, in particular to a compound material containing a dimethylanthracene structure as a central framework and application thereof in the field of OLEDs.
Background
The Organic Light Emission Diodes (OLED) device technology can be used for manufacturing novel display products and novel lighting products, is expected to replace the existing liquid crystal display and fluorescent lamp lighting, and has wide application prospect.
The OLED light-emitting device is of a sandwich structure and comprises electrode material film layers and organic functional materials clamped between different electrode film layers, and the various different functional materials are mutually overlapped together according to the application to form the OLED light-emitting device. When voltage is applied to two end electrodes of the OLED light-emitting device as a current device, positive and negative charges in the organic layer functional material film layer are acted through an electric field, and the positive and negative charges are further compounded in the light-emitting layer, namely OLED electroluminescence is generated.
At present, the OLED display technology has been applied in the fields of smart phones, tablet computers, and the like, and will further expand to large-size application fields such as televisions, but compared with actual product application requirements, the light emitting efficiency, the service life, and other performances of the OLED device need to be further improved.
The research on the improvement of the performance of the OLED light emitting device includes: the driving voltage of the device is reduced, the luminous efficiency of the device is improved, the service life of the device is prolonged, and the like. In order to realize the continuous improvement of the performance of the OLED device, not only the innovation of the structure and the manufacturing process of the OLED device but also the continuous research and innovation of the OLED photoelectric functional material are needed to create the functional material of the OLED with higher performance.
The photoelectric functional materials of the OLED applied to the OLED device can be divided into two broad categories from the application, i.e., charge injection transport materials and light emitting materials, and further, the charge injection transport materials can be further divided into electron injection transport materials, electron blocking materials, hole injection transport materials and hole blocking materials, and the light emitting materials can be further divided into main light emitting materials and doping materials.
In order to fabricate a high-performance OLED light-emitting device, various organic functional materials are required to have good photoelectric properties, for example, as a charge transport material, good carrier mobility, high glass transition temperature, etc. are required, and as a host material of a light-emitting layer, a material having good bipolar property, appropriate HOMO/LUMO energy level, etc. is required.
The OLED photoelectric functional material film layer for forming the OLED device at least comprises more than two layers of structures, and the OLED device structure applied in industry comprises a hole injection layer, a hole transport layer, an electron blocking layer, a light emitting layer, a hole blocking layer, an electron transport layer, an electron injection layer and other various film layers, namely the photoelectric functional material applied to the OLED device at least comprises a hole injection material, a hole transport material, a light emitting material, an electron transport material and the like, and the material type and the matching form have the characteristics of richness and diversity. In addition, for the collocation of OLED devices with different structures, the used photoelectric functional materials have stronger selectivity, and the performance of the same materials in the devices with different structures can also be completely different.
Therefore, aiming at the industrial application requirements of the current OLED device, different functional film layers of the OLED device and the photoelectric characteristic requirements of the device, a more suitable OLED functional material or material combination with high performance needs to be selected to realize the comprehensive characteristics of high efficiency, long service life and low voltage of the device. In terms of the actual demand of the current OLED display illumination industry, the development of the current OLED material is far from enough, and lags behind the requirements of panel manufacturing enterprises, and the development of organic functional materials with higher performance is very important as a material enterprise.
Disclosure of Invention
In view of the above problems in the prior art, the present applicant provides an organic compound containing dimethylanthracene and its application in organic electroluminescent devices. The compound contains a dimethylanthracene structure, has higher glass transition temperature and molecular thermal stability, proper HOMO and LUMO energy levels and higher Eg, and can effectively improve the photoelectric property of an OLED device and the service life of the OLED device through device structure optimization.
The technical scheme of the invention is as follows:
the applicant provides an organic compound containing dimethylanthracene, wherein the structural general formula of the compound is shown as a general formula (1):
wherein Ar is1、Ar2Each independently represents phenyl, biphenyl or naphthyl;
R1、R2each independently represents a structure shown in a general formula (2) or a general formula (3); r1And R2May be the same or different; r1May also be represented as a hydrogen atom;
wherein,
x is oxygen atom, sulfur atom, C1-10One of linear or branched alkyl substituted alkylene, aryl substituted alkylene, alkyl or aryl substituted tertiary amine;
R3represented by a hydrogen atom, a structure represented by the general formula (4) or the general formula (5):
R6represented by a hydrogen atom, a halogen atom or C1-10A linear or branched alkyl group;
a isOrX1、X2Each independently represents an oxygen atom, a sulfur atom, C1-10One of linear chain or branched alkyl substituted alkylene, aryl substituted alkylene and aryl substituted tertiary amine;
the structures shown in the general formulas (4) and (5) are passed through CL1-CL2Key, CL2-CL3Key, CL3-CL4Bond or CL4-CL5A bond is attached to formula (2);
R4、R5each independently represents a structure represented by phenyl, naphthyl, biphenyl, general formula (6), general formula (7), general formula (8) or general formula (9); r5May also be represented by a hydrogen atom, a halogen atom, C1-10A linear or branched alkane;
wherein,
x is oxygen atom, sulfur atom, C1-10One of linear or branched alkyl substituted alkylene, aryl substituted alkylene, alkyl or aryl substituted tertiary amine;
R7、R8each independently represents phenyl, naphthyl, biphenyl, terphenyl, dibenzofuran, dibenzothiophene, 9-dimethylfluorene or carbazole.
Preferably, said R is1、R2Independently expressed as:
orAny one of them.
Preferably, the specific structural formula of the organic compound containing dimethylanthracene is as follows:
(133) any one of the above.
The applicant also provides a process for the preparation of said organic compounds, the reaction equation occurring during the preparation being:
R1when represented as a hydrogen atom, the compound is,
R1when the structure is represented by the general formula (2) or the general formula (3),
the preparation process comprises the following steps:
weighing dimethyl anthracene bromideCompound and H-R2Or H-R1And H-R2The mixture of (1), dissolved with toluene; then adding Pd2(dba)3Tri-tert-butylphosphine, sodium tert-butoxide; reacting the mixed solution of the reactants at the reaction temperature of 95-110 ℃ for 10-24 hours under the inert atmosphere, cooling and filtering the reaction solution, carrying out rotary evaporation on the filtrate, and passing through a silica gel column to obtain a target product; the dimethyl anthracene bromide and H-R1And H-R2The molar ratio of (A) to (B) is 1: 1.2-3.0, Pd2(dba)3The molar ratio of the tert-butyl phosphine to the dimethyl anthracene bromide is 0.006-0.02: 1, the molar ratio of the tri-tert-butyl phosphine to the dimethyl anthracene bromide is 0.006-0.02: 1, and the molar ratio of the sodium tert-butoxide to the dimethyl anthracene bromide is 2.0-5.0: 1.
The present applicant also provides an organic electroluminescent device comprising the organic compound containing dimethylanthracene in at least one functional layer.
The beneficial technical effects of the invention are as follows:
the compound takes dimethylanthracene as a mother nucleus, is connected with symmetrical or asymmetrical rigid groups, destroys the crystallinity of molecules, avoids intermolecular aggregation, has high glass transition temperature, can keep high film stability when the material is applied to an OLED device, and prolongs the service life of the OLED device.
The compound structure of the invention ensures that the distribution of electrons and holes in the luminescent layer is more balanced, and under the proper HOMO energy level, the hole injection/transmission performance is improved; under a proper LUMO energy level, the organic electroluminescent material plays a role in blocking electrons, and improves the recombination efficiency of excitons in the luminescent layer; when the aryl substituted dimethylanthracene is used as a light-emitting functional layer material of an OLED light-emitting device, the aryl substituted dimethylanthracene is matched with the branched chain in the range of the invention, so that the exciton utilization rate and the high fluorescence radiation efficiency can be effectively improved, the efficiency roll-off under high current density is reduced, the voltage of the device is reduced, the current efficiency of the device is improved, and the service life of the device is prolonged.
The special structural design of the compound enables the material to have high decomposition temperature and low sublimation temperature or vacuum evaporation temperature, and a higher temperature difference window is formed between the sublimation temperature or the evaporation temperature and the decomposition temperature, so that the material has higher operation controllability in industrial application, and is beneficial to mass production application of the material.
The compound has good application effect in OLED luminescent devices and good industrialization prospect.
Drawings
FIG. 1 is a schematic structural diagram of an OLED device using the materials listed in the present invention;
wherein, 1 is a transparent substrate layer, 2 is an ITO anode layer, 3 is a hole injection layer, 4 is a hole transport/electron blocking layer, 5 is a luminescent layer, 6 is an electron transport/hole blocking layer, 7 is an electron injection layer, and 8 is a cathode reflection electrode layer.
Detailed Description
The present invention will be described in detail with reference to the accompanying drawings and examples.
Example 1: synthesis of Compound 2:
the synthetic route is as follows:
in a 250ml three-mouth bottle, 0.01mol of raw material A1, 0.012mol of raw material B1, 0.03mol of sodium tert-butoxide and 5X 10 are added under the protection of nitrogen-5molpd2(dba)3，5×10-5Heating and refluxing the tri-tert-butylphosphine and 150ml of toluene for 24 hours, sampling a sample, and completely reacting; naturally cooling, filtering, rotary steaming the filtrate, and performing column chromatography to obtain the final productThe standard product, HPLC purity 99.1%, yield 67.3%;
elemental analysis Structure (molecular formula C)67H55N3): theoretical value C, 89.20; h, 6.14; n, 4.66; test values are: c, 89.20; h, 6.15; and N, 4.65.
HPLC-MS: the molecular weight of the material is 902.17, and the measured molecular weight is 902.57.
Example 2: synthesis of Compound 3:
the synthetic route is as follows:
in a 250ml three-mouth bottle, 0.01mol of raw material A1, 0.012mol of raw material B2, 0.03mol of sodium tert-butoxide and 5X 10 are added under the protection of nitrogen-5mol pd2(dba)3，5×10-5Heating and refluxing the tri-tert-butylphosphine and 150ml of toluene for 24 hours, sampling a sample, and completely reacting; naturally cooling, filtering, rotatably steaming the filtrate, and carrying out column chromatography to obtain a target product with the HPLC purity of 99.3 percent and the yield of 62.7 percent;
elemental analysis Structure (molecular formula C)64H49N3O): theoretical value C, 87.74; h, 5.64; n, 4.80; o, 1.83; test values are: c, 87.74; h, 5.62; n, 4.82; o, 1.82.
HPLC-MS: the molecular weight of the material is 876.09, and the measured molecular weight is 876.51.
Example 3: synthesis of compound 9:
the synthetic route is as follows:
in a 250ml three-mouth bottle, 0.01mol of raw material A1, 0.012mol of raw material B3, 0.03mol of sodium tert-butoxide and 5X 10 are added under the protection of nitrogen-5mol pd2(dba)3，5×10-5Heating and refluxing the tri-tert-butylphosphine and 150ml of toluene for 24 hours, sampling a sample, and completely reacting; naturally cooling, filtering, rotatably steaming the filtrate, and carrying out column chromatography to obtain a target product with the HPLC purity of 99.4% and the yield of 71.2%;
elemental analysis Structure (molecular formula C)64H45N3O): theoretical value C, 88.15; h, 5.20; n, 4.82; o, 1.83; test values are: c, 88.14; h, 5.21; n, 4.83; o, 1.82.
HPLC-MS: the molecular weight of the material is 872.06, and the measured molecular weight is 872.48.
Example 4: synthesis of compound 17:
the synthetic route is as follows:
prepared according to the synthetic method of compound 2 in example 1, except that the starting material C1 was used instead of the starting material B1;
elemental analysis Structure (molecular formula C)73H58N2): theoretical value C, 91.02; h, 6.07; n, 2.91; test values are: c, 91.03; h, 6.05; and N, 2.92.
HPLC-MS: the molecular weight of the material is 963.26, and the measured molecular weight is 963.71.
Example 5: synthesis of compound 24:
the synthetic route is as follows:
prepared according to the synthetic method of compound 2 in example 1, except that the starting material D1 was used in place of the starting material B1;
elemental analysis Structure (molecular formula C)67H51N3O2): theoretical value C, 90.19; h, 5.30; n, 2.10; o, 2.40; test values are: c, 90.16; h, 5.32; n, 2.11; o, 2.41.
HPLC-MS: the molecular weight of the material is 930.14, and the measured molecular weight is 930.56.
Example 6: synthesis of compound 34:
the synthetic route is as follows:
prepared according to the synthetic method of compound 2 in example 1, except that the starting material E1 was used in place of the starting material B1;
elemental analysis Structure (molecular formula C)52H40N2O): theoretical value C, 88.10; h, 5.69; n, 3.95; o, 2.26; test values are: c, 88.11; h, 5.70; n, 3.94; o, 2.25.
HPLC-MS: the molecular weight of the material is 708.89, and the measured molecular weight is 709.03.
Example 7: synthesis of compound 37:
the synthetic route is as follows:
prepared according to the synthetic method of compound 2 in example 1, except that the starting material E2 was used in place of the starting material B1;
elemental analysis Structure (molecular formula C)55H46N2): theoretical value C, 89.88; h, 6.31; n, 3.81; test values are: c, 89.90; h, 6.30; and N, 3.80.
HPLC-MS: the molecular weight of the material is 734.97, and the measured molecular weight is 735.32.
Example 8: synthesis of compound 43:
the synthetic route is as follows:
prepared according to the synthetic method of compound 2 in example 1, except that the starting material E3 was used in place of the starting material B1;
elemental analysis Structure (molecular formula C)52H38N2O): theoretical value C, 88.36; h, 5.42; n, 3.96; o, 2.26; test values are: c, 88.37; h, 5.43; n, 3.95; o, 2.25.
HPLC-MS: the molecular weight of the material is 706.87, and the measured molecular weight is 706.11.
Example 9: synthesis of compound 52:
the synthetic route is as follows:
prepared according to the synthetic method of compound 2 in example 1, except that the starting material E3 was used in place of the starting material B1;
elemental analysis Structure (molecular formula C)61H48N2O): theoretical value C, 88.80; h, 5.86; n, 3.40; o, 1.94; test values are: c, 88.79; h, 5.85; n, 3.41; o, 1.95.
HPLC-MS: the molecular weight of the material is 825.05, and the measured molecular weight is 825.51.
Example 10: synthesis of compound 62:
the synthetic route is as follows:
prepared according to the synthetic method of compound 2 in example 1, except that the starting material F1 was used in place of the starting material B1;
elemental analysis Structure (molecular formula C)56H42N2O): theoretical value C, 88.62; h, 5.58; n, 3.69; o, 2.11; test values are: c, 88.61; h, 5.59; n, 3.70; o, 2.10.
HPLC-MS: the molecular weight of the material is 758.95, and the measured molecular weight is 759.33.
Example 11: synthesis of compound 75:
the synthetic route is as follows:
prepared according to the synthetic method of compound 2 in example 1, except that the starting material F2 was used in place of the starting material B1;
elemental analysis Structure (molecular formula C)59H46N2): theoretical value C, 90.50; h, 5.92; n, 3.58; test values are: c, 90.48; h, 5.93; and N, 3.59.
HPLC-MS: the molecular weight of the material is 783.01, and the measured molecular weight is 783.49.
Example 12: synthesis of compound 90:
the synthetic route is as follows:
prepared according to the synthetic method of compound 2 in example 1, except that the starting material G1 was used in place of the starting material B1;
elemental analysis Structure (molecular formula C)61H46N2O): theoretical value C, 89.02; h, 5.63; n, 3.40; o, 1.94; test values are: c, 89.03; h, 5.62; n, 3.40; o, 1.95.
HPLC-MS: the molecular weight of the material is 823.03, and the measured molecular weight is 823.47.
Example 13: synthesis of compound 100:
the synthetic route is as follows:
prepared according to the synthetic method of compound 2 in example 1, except that the starting material G2 was used in place of the starting material B1;
elemental analysis Structure (molecular formula C)61H46N2O): theoretical value C, 89.02; h, 5.63; n, 3.40; o, 1.94; test values are: c, 89.03; h, 5.62; n, 3.41; o, 1.94.
HPLC-MS: the molecular weight of the material is 823.03, and the measured molecular weight is 823.51.
Example 14: synthesis of compound 111:
the synthetic route is as follows:
prepared according to the synthetic method of compound 2 in example 1, except that the starting material H1 was used instead of the starting material B1;
elemental analysis Structure (molecular formula C)61H49N3): theoretical value C, 88.91; h, 5.99; n, 5.10; test values are: c, 88.89; h, 6.00; n, 5.11.
HPLC-MS: the molecular weight of the material is 824.06, and the measured molecular weight is 824.47.
Example 15: synthesis of compound 123:
the synthetic route is as follows:
prepared according to the synthetic method of compound 2 in example 1, except that the starting material I1 was used instead of the starting material B1;
elemental analysis Structure (molecular formula C)64H52N2O): theoretical value C, 88.85; h, 6.06; n, 3.24; o, 1.85; test values are: c, 88.85; h, 6.05; n, 3.25; o, 1.85.
HPLC-MS: the molecular weight of the material is 865.11, and the measured molecular weight is 865.57.
Example 16: synthesis of compound 128:
the synthetic route is as follows:
prepared according to the synthetic method of compound 2 in example 1, except that the starting material I1 was used instead of the starting material B1;
elemental analysis Structure (molecular formula C)64H52N2S): theoretical value C, 87.23; h, 5.95; n, 3.18; s, 3.64; test values are: c, 87.23; h, 5.95; n, 3.17; and S, 3.65.
HPLC-MS: the molecular weight of the material is 881.18, and the measured molecular weight is 881.61.
The compound of the invention can be used in a luminescent device, can be used as a hole transport/electron barrier layer material, and can also be used as a host-guest material of a luminescent layer. The compound has high operability and practicability when being applied, and is mainly reflected by high glass transition temperature, low sublimation temperature, high decomposition temperature and film forming stability.
The compound 2, the compound 12, the compound 90 and the existing material CBP are respectively tested for thermal performance and HOMO energy level, and the detection results are shown in Table 1.
TABLE 1
Note: the glass transition temperature Tg is determined by differential scanning calorimetry (DSC, DSC204F1 DSC, Germany Chi corporation), the heating rate is 10 ℃/min; the evaporation temperature is SUNIC evaporation equipment, the vacuum degree is less than 1E-5Pa, and the material rate isThe temperature of the vapor deposition; the thermogravimetric temperature Td is a temperature at which 1% of the weight is lost in a nitrogen atmosphere, and is measured on a TGA-50H thermogravimetric analyzer of Shimadzu corporation, JapanThe air flow is 20 mL/min; the film forming stability is that a SUNIC evaporation machine is utilized to evaporate materials onto a glass substrate to form a film with the thickness of 100nm, the film is packaged in a glove box environment (the water oxygen content is less than 1PPm), a packaged glass sample is placed and tested for 240 hours under the double 80 conditions (the humidity is 80 percent, the temperature is 80 ℃), and the crystallization performance of the sample film is observed by a microscope; the highest occupied molecular orbital HOMO energy level and the lowest occupied molecular orbital LUMO energy level were measured by a photoelectron emission spectrometer (AC-2 type PESA) in an atmospheric environment.
As can be seen from the data in the table above, the compound of the invention has adjustable HOMO energy level, and is suitable for being used as different functional layer materials; the low evaporation temperature can reduce the influence of thermal radiation on Fine-mask deformation in an evaporation machine table when the material is applied industrially, improve the PPI grade of the OLED device and improve the yield of a production line; the film-forming stability is high, the film form can be kept in the use process of the material after the material is applied to an OLED device, local crystallization is not formed, the short circuit of the device electrode is avoided, and the service life of the OLED device is prolonged;
the application effect of the synthesized OLED material in the device as different functional layer materials is explained in detail through device examples 1-9 and comparative example 1. Compared with the device embodiment 1, the device embodiments 2 to 9 and the comparative example 1 of the present invention have the same manufacturing process, and adopt the same substrate material and electrode material, and the film thickness of the electrode material is also kept consistent, except that the main material or the hole transport/electron blocking layer of the light emitting layer 5 in the device is replaced. The results of the performance tests of the devices obtained in the examples are shown in table 2.
Device example 1
An electroluminescent device, which is prepared by the steps comprising:
a) cleaning the ITO anode layer 2 on the transparent substrate layer 1, respectively ultrasonically cleaning the ITO anode layer 2 with deionized water, acetone and ethanol for 15 minutes, and then treating the ITO anode layer 2 in a plasma cleaner for 2 minutes;
b) evaporating a hole injection layer material HAT-CN on the ITO anode layer 2 in a vacuum evaporation mode, wherein the thickness of the hole injection layer material HAT-CN is 10nm, and the hole injection layer material HAT-CN is used as a hole injection layer 3;
c) a hole transport material, namely the compound 1 of the invention, is evaporated on the hole injection layer 3 in a vacuum evaporation mode, the thickness is 80nm, and the layer is a hole transport layer/electron blocking layer 4;
d) depositing a light-emitting layer 5 on the hole transport/electron blocking layer 4 by using CBP as a host material, Ir (ppy)3As a doping material, the material has a doping content ratio of 10% and a thickness of 30 nm;
e) an electron transport material TPBI is evaporated on the light-emitting layer 5 in a vacuum evaporation mode, the thickness of the TPBI is 40nm, and the organic material of the TPBI layer is used as a hole blocking/electron transport layer 6;
f) vacuum evaporating an electron injection layer LiF with the thickness of 1nm on the hole blocking/electron transport layer 6, wherein the layer is an electron injection layer 7;
g) a cathode Mg/Ag layer is vacuum-evaporated on the electron injection layer 7, the doping ratio of Mg to Ag is 9:1, the thickness of the cathode Mg/Ag layer is 15nm, the thickness of Ag is 3nm, and the cathode Mg/Ag layer is a cathode reflection electrode layer 8;
after the electroluminescent device was fabricated according to the above procedure, the current efficiency and lifetime of the device were measured, and the results are shown in table 2.
The molecular mechanism formula of the related material is as follows:
device example 2
This embodiment differs from device embodiment 1 in that: the hole transport layer/electron blocking layer material of the electroluminescent device was the compound 12 of the present invention, and the detection data of the electroluminescent device obtained are shown in table 2.
Device example 3
This embodiment differs from device embodiment 1 in that: the hole transport layer/electron blocking layer material of the electroluminescent device was the compound 19 of the present invention, and the detection data of the electroluminescent device obtained are shown in table 2.
Device example 4
This embodiment differs from device embodiment 1 in that: the hole transport layer/electron blocking layer material of the electroluminescent device was the compound 90 of the present invention, and the detection data of the electroluminescent device obtained are shown in table 2.
Device example 5
This embodiment differs from device embodiment 1 in that: the hole transport layer/electron blocking layer material of the electroluminescent device was the compound 93 of the present invention, and the detection data of the electroluminescent device obtained are shown in table 2.
Device example 6
This embodiment differs from device embodiment 1 in that: the material of the hole transport layer/electron blocking layer of the electroluminescent device was NPB, the host material of the light-emitting layer of the electroluminescent device was changed to the compound 123 of the present invention, and the detection data of the electroluminescent device obtained are shown in table 2.
Device example 7
This embodiment differs from device embodiment 1 in that: the material of the hole transport layer/electron barrier layer of the electroluminescent device is NPB, the main material of the luminescent layer of the electroluminescent device is changed into the compound 87 and the compound GHN, and the doping material is Ir (ppy)3The mixing mass ratio of the three materials is 60:30:10, and the detection data of the obtained electroluminescent device is shown in Table 2.
Device example 8
This embodiment differs from device embodiment 1 in that: the material of the hole transport layer/electron blocking layer of the electroluminescent device is NPB, and the main material of the light-emitting layer of the electroluminescent device is changed into the compound 99 and the compoundA material GHN, the doping material being Ir (ppy)3The mixing mass ratio of the three materials is 60:30:10, and the detection data of the obtained electroluminescent device is shown in Table 2.
Device example 9
This embodiment differs from device embodiment 1 in that: the material of the hole transport layer/electron barrier layer of the electroluminescent device is NPB, the main material of the luminescent layer of the electroluminescent device is changed into the compound 104 and the compound GHN, and the doping material is Ir (ppy)3The mixing mass ratio of the three materials is 60:30:10, and the detection data of the obtained electroluminescent device is shown in Table 2.
Device comparative example 1
This embodiment differs from device embodiment 1 in that: the hole transport layer/electron blocking layer material of the electroluminescent device was NPB, the light-emitting layer host material of the electroluminescent device was CBP, and the detection data of the electroluminescent device obtained are shown in table 2.
TABLE 1
Note: the device test performance is referred to device comparative example 1, and each performance index of the device of comparative example 1 is set to 1.0. The current efficiency of comparative example 1 was 28cd/A (@10mA/cm 2); CIE color coordinates (0.33, 0.63); LT95 lifetime decay was 2.5Hr at 5000 brightness.
From the results in table 2, it can be seen that the organic compound containing a dimethylanthracene structure of the present invention can be applied to the fabrication of an OLED light-emitting device, and compared with the comparative example, the efficiency and lifetime of the organic compound are greatly improved compared with the known OLED material, and particularly, the lifetime decay of the device is greatly improved.
Therefore, the above description is only for the purpose of illustrating the preferred embodiments of the present invention and should not be taken as limiting the invention, and any modifications, equivalents, improvements and the like that are within the spirit and principle of the present invention should be included in the scope of the present invention.

Claims (5)

1. An organic compound containing dimethylanthracene, characterized in that the structural general formula of the compound is shown as the general formula (1):
wherein Ar is1、Ar2Each independently represents phenyl, biphenyl or naphthyl;
R1、R2each independently is represented by the general formula (2) orA structure represented by the general formula (3); r1And R2May be the same or different; r1May also be represented as a hydrogen atom;
wherein,
x is one of oxygen atom, sulfur atom, methylene substituted by methyl and tertiary amino substituted by phenyl;
R3represented by a hydrogen atom, a structure represented by the general formula (4) or the general formula (5):
R6represented by a hydrogen atom, a halogen atom or C1-10A linear or branched alkyl group;
a isX1、X2Each independently represents one of oxygen atom, sulfur atom, methyl-substituted methylene and phenyl-substituted tertiary amino;
the structures shown in the general formulas (4) and (5) are passed through CL1-CL2Key, CL2-CL3Key, CL3-CL4Bond or CL4-CL5A bond is attached to formula (2);
R4、R5each independently represents a structure represented by phenyl, naphthyl, biphenyl, general formula (6), general formula (7), general formula (8) or general formula (9); r5May also be represented by a hydrogen atom, a halogen atom, C1-10A linear or branched alkane;
wherein,
x is one of oxygen atom, sulfur atom, methylene substituted by methyl and tertiary amino substituted by phenyl;
R7、R8each independently represents phenyl, naphthyl, biphenyl, terphenyl, dibenzofuran, dibenzothiophene, 9-dimethylfluorene or carbazole.
2. An organic compound according to claim 1, characterized in that R is1、R2Independently expressed as:
any one of them.
3. The organic compound according to claim 1, wherein the specific structural formula of the organic compound containing dimethylanthracene is:
any one of the above.
4. A method for preparing the organic compound according to claim 1, wherein the reaction equation occurring during the preparation is:
R1when represented as a hydrogen atom, the compound is,
R1when the structure is represented by the general formula (2) or the general formula (3),
the preparation process comprises the following steps:
weighing dimethyl anthracene bromide and H-R2Or H-R1And H-R2The mixture of (1), dissolved with toluene; then adding Pd2(dba)3Tri-tert-butylphosphine, sodium tert-butoxide; reacting the mixed solution of the reactants at the reaction temperature of 95-110 ℃ for 10-24 hours under the inert atmosphere, cooling and filtering the reaction solution, carrying out rotary evaporation on the filtrate, and passing through a silica gel column to obtain a target product;
the dimethyl anthracene bromide and H-R1And H-R2The molar ratio of (A) to (B) is 1: 1.2-3.0, Pd2(dba)3The molar ratio of the tert-butyl phosphine to the dimethyl anthracene bromide is 0.006-0.02: 1, the molar ratio of the tri-tert-butyl phosphine to the dimethyl anthracene bromide is 0.006-0.02: 1, and the molar ratio of the sodium tert-butoxide to the dimethyl anthracene bromide is 2.0-5.0: 1.
5. An organic electroluminescent element, characterized in that at least one functional layer of the organic electroluminescent element contains the organic compound containing dimethylanthracene according to any one of claims 1 to 4.
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