CN106467355B - The manufacture method and manufacturing equipment of quartz glass substrate - Google Patents
The manufacture method and manufacturing equipment of quartz glass substrate Download PDFInfo
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- CN106467355B CN106467355B CN201610849794.8A CN201610849794A CN106467355B CN 106467355 B CN106467355 B CN 106467355B CN 201610849794 A CN201610849794 A CN 201610849794A CN 106467355 B CN106467355 B CN 106467355B
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- oxygen
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B19/00—Other methods of shaping glass
- C03B19/14—Other methods of shaping glass by gas- or vapour- phase reaction processes
- C03B19/1415—Reactant delivery systems
- C03B19/1423—Reactant deposition burners
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B19/00—Other methods of shaping glass
- C03B19/14—Other methods of shaping glass by gas- or vapour- phase reaction processes
- C03B19/1484—Means for supporting, rotating or translating the article being formed
- C03B19/1492—Deposition substrates, e.g. targets
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- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Manufacturing & Machinery (AREA)
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- Organic Chemistry (AREA)
- Silicon Compounds (AREA)
Abstract
The invention discloses a kind of manufacture method of quartz glass substrate and manufacturing equipment.This method includes：Target base plate and reaction vessel are positioned in reacting furnace, the target base plate is located above the reaction vessel, silica flour is placed with the reaction vessel；Make silica flour in reacting furnace with oxygen reaction to generate silicon dioxide layer in the target base plate；The silicon dioxide layer is peeled off from the target base plate, quartz glass substrate is formed.In the manufacture method for the quartz base plate that the present invention is provided, make silica flour in reacting furnace with oxygen reaction to generate silicon dioxide layer in target base plate, silicon dioxide layer is peeled off from target base plate and forms quartz glass substrate, so as to reducing manufacturing cost, reduce difficulty of processing and avoid environment is had undesirable effect.
Description
Technical field
The present invention relates to display technology field, the manufacture method and manufacturing equipment of more particularly to a kind of quartz glass substrate.
Background technology
The transparency silica glass of high-purity is a kind of extraordinary material of optical property, is widely used in laser technology, boat
The fields such as its aviation, optic communication and semiconductor integrated circuit manufacture.Compared with simple glass, silica in quartz glass
(SiO2) content more than 96%, it has the advantages that softening temperature point is high, anti-wear performance is good and ultraviolet ray transmissivity is high, this
A little advantages are greatly expanded the application field of quartz glass.
At present, the conventional technique for preparing quartz glass substrate has the following two kinds.One kind is chemical vapour deposition technique, the party
Method uses tetrachloro silicane (SiCl4), oxygen (O2), hydrogen (H2) etc. gas SiO is prepared by chemical vapor deposition2Substrate,
This technique is high to equipment requirement, while specially treated need to be carried out to exhaust emissions, is unfavorable for environmental protection.Another method is also
SiCl can be passed through4Flame hydrolysis obtains SiO2Particle, to SiO2Particle fusion and vitrifying forms transparent synthetic quartz glass
Glass ingot, obtains quartz glass substrate, preparation process can not to silica glass ingot by groove is heavy, after heat treatment and precision optical machinery processing
Avoid impacting environment.
But, above two prepares the manufacture method cost height of quartz glass substrate, difficulty of processing is big and environment is caused
Harmful effect.
The content of the invention
The present invention provides a kind of manufacture method and manufacturing equipment of quartz glass substrate, for reducing manufacturing cost, reduction
Difficulty of processing and avoid having undesirable effect environment.
To achieve the above object, the invention provides a kind of manufacture method of quartz glass substrate, including：
Target base plate and reaction vessel are positioned in reacting furnace, the target base plate is located above the reaction vessel,
Silica flour is placed with the reaction vessel；
Make silica flour in reacting furnace with oxygen reaction to generate silicon dioxide layer in the target base plate；
The silicon dioxide layer is peeled off from the target base plate, quartz glass substrate is formed.
Alternatively, it is described to make silica flour in reacting furnace with oxygen reaction to generate silicon dioxide layer in the target base plate
Also include before：
Inert gas is passed through into the reacting furnace, and the temperature of the reacting furnace is warming up to the first design temperature；
Vacuumize process is carried out to the reacting furnace so that the pressure of the reacting furnace is down to setting pressure.
Alternatively, it is described silica flour is included with oxygen reaction to generate silicon dioxide layer in the target base plate：
Mixed gas is passed through into the reacting furnace, the oxygen in the silica flour and the mixed gas is carried out reaction life
Into silicon monoxide steam, the mixed gas, which includes inert gas and oxygen or the mixed gas, includes inert gas and sky
Gas, the air includes oxygen；
Under the control of the air-flow of the mixed gas, the silicon monoxide steam in the target base plate with the oxygen
Gas carries out reaction generation silicon dioxide layer.
Alternatively, it is described to make silica flour with oxygen reaction also to wrap after generation silicon dioxide layer in the target base plate
Include：
The temperature of reacting furnace is controlled so that the temperature of reacting furnace is down into the second design temperature with setting speed, and opens reaction
The fire door of stove carries out Temperature fall so that the temperature of reacting furnace is down into the 3rd design temperature, and second design temperature is more than described
3rd design temperature；
The target base plate for being formed with silicon dioxide layer is taken out from the reacting furnace.
Alternatively, the scope of the distance between the target base plate and the reaction vessel is 100mm to 1000mm.
Alternatively, first design temperature is more than or equal to 1000 DEG C, and second design temperature is less than 1000 DEG C, institute
The 3rd design temperature is stated for room temperature.
Alternatively, when the mixed gas includes inert gas and oxygen, the flow of inert gas in the mixed gas
Scope be 100mL/min to 1000mL/min, the scope of the flow of oxygen is 0.1mL/min to 1mL/min；Or, it is described
When mixed gas includes inert gas and air, in the mixed gas scope of the flow of inert gas for 100mL/min extremely
1000mL/min, the scope of the flow of air is 0.1mL/min to 1mL/min；
The scope of the partial pressure of the oxygen is 5Pa to 50Pa.
Alternatively, the scope for setting pressure is 20Kpa to 80KPa.
To achieve the above object, the invention provides a kind of manufacturing equipment of quartz glass substrate, including：Reaction vessel,
Reacting furnace and aerating device, target base plate and reaction vessel are positioned in reacting furnace, and the target base plate is located at the reaction and held
Above device；
The reaction vessel, for placing silica flour；
The aerating device, for being filled with oxygen into the reacting furnace；
The reacting furnace, it is described for making silica flour with oxygen reaction to generate silicon dioxide layer in the target base plate
Silicon dioxide layer forms quartz glass substrate after being peeled off from the target base plate.
Alternatively, the aerating device includes lazy specifically for being passed through mixed gas, the mixed gas into reacting furnace
Property G＆O or the mixed gas include inert gas and air, the air include oxygen, to realize to reaction
Oxygen is passed through in stove；
The aerating device includes the first aerating device and the second aerating device, and first aerating device fills by first
Feed channel is connected with reacting furnace, and first switch control device, second aerating device are provided with first gas ducting
Connected by the second gas ducting with reacting furnace, second switch control device is provided with second gas ducting；
First aerating device, for being passed through inert gas into the reacting furnace；
Second aerating device, for being passed through oxygen or air into the reacting furnace；
The first switch control device, the flow for controlling inert gas；
The second switch control device, for controlling the flow of oxygen or the flow of air.
The invention has the advantages that：
In the manufacture method and manufacturing equipment of the quartz glass substrate that the present invention is provided, silica flour and oxygen are made in reacting furnace
Silicon dioxide layer is peeled off to generate silicon dioxide layer in target base plate and forms quartz glass substrate by reaction from target base plate
Plate, so as to reduce manufacturing cost, reduces difficulty of processing and avoids environment is had undesirable effect.
Brief description of the drawings
Fig. 1 is a kind of flow chart of the manufacture method for quartz glass substrate that the embodiment of the present invention one is provided；
Fig. 2 is a kind of flow chart of the manufacture method for quartz glass substrate that the embodiment of the present invention two is provided；
Fig. 3 a are the schematic diagram of placement silica flour in embodiment two；
Fig. 3 b are the schematic diagram of drop target substrate and reaction vessel in embodiment two；
Fig. 3 c are to be passed through the schematic diagram of inert gas in embodiment three；
Fig. 3 d be embodiment three in reacting furnace carry out vacuumize process schematic diagram；
Fig. 3 e are the schematic diagram of generation silicon monoxide steam in embodiment three；
Fig. 3 f are the schematic diagram of generation silicon dioxide layer in embodiment three；
Fig. 4 is a kind of structural representation of the manufacturing equipment for quartz glass substrate that the embodiment of the present invention three is provided.
Embodiment
To make those skilled in the art more fully understand technical scheme, the present invention is carried below in conjunction with the accompanying drawings
The manufacture method of the quartz glass substrate of confession and being described in detail for manufacturing equipment.
Fig. 1 is a kind of flow chart of the manufacture method for quartz glass substrate that the embodiment of the present invention one is provided, such as Fig. 1 institutes
Show, this method includes：
Step 101, target base plate and reaction vessel be positioned in reacting furnace, target base plate is located above reaction vessel,
Silica flour is placed with reaction vessel.
Step 102, in reacting furnace make silica flour and oxygen reaction to generate silicon dioxide layer in target base plate.
This step is specifically as follows：Make silica flour with oxygen reaction with target base when reacting furnace is in the first design temperature
Silicon dioxide layer is generated on plate.
Step 103, silicon dioxide layer peeled off from target base plate, form quartz glass substrate.
In the manufacture method for the quartz base plate that the present embodiment is provided, make silica flour with oxygen reaction with target in reacting furnace
Silicon dioxide layer is generated on substrate, silicon dioxide layer is peeled off from target base plate and forms quartz glass substrate, so as to reduce
Manufacturing cost, reduces difficulty of processing and avoids environment is had undesirable effect.
Fig. 2 is a kind of flow chart of the manufacture method for quartz glass substrate that the embodiment of the present invention two is provided, such as Fig. 2 institutes
Show, this method includes：
Step 201, silica flour is placed into reaction vessel.
Fig. 3 a are the schematic diagram of placement silica flour in embodiment two, and as shown in Figure 3 a, silica flour 1 is placed into reaction vessel 2.
Specifically, silica flour 1 can be laid in reaction vessel 2.The material of the bottom of reaction vessel 2 can be gas permeable material, in order to rear
The bottom for the gas permeation reaction vessel 2 being passed through in continuous technique, wherein, gas permeable material can be porous structure material, for example：It is many
Hole ceramics.Preferably, reaction vessel 2 can be crucible, for example：Alumina crucible, alumina crucible has resistant to elevated temperatures characteristic
And cost is low.
Step 202, target base plate and reaction vessel be positioned in reacting furnace, target base plate is located above reaction vessel.
Fig. 3 b are the schematic diagram of drop target substrate and reaction vessel in embodiment two, as shown in Figure 3 b, by target base plate 3
It is positioned over reaction vessel 2 in reacting furnace 4, target base plate 3 is located at the top of reaction vessel 2.Target base plate 3 uses high temperature resistant base
Plate, and its surface wants smooth bright and clean, for example：The material of target base plate is ZrO2。
In the present embodiment, the scope of target base plate 3 and the distance between reaction vessel 2 is 100mm to 1000mm.It is preferred that
The distance between ground, target base plate 3 and reaction vessel 2 are 100mm.
Step 203, inert gas is passed through into reacting furnace, and the temperature of reacting furnace is warming up to the first design temperature.
Fig. 3 c is are passed through the schematic diagram of inert gas in embodiment three, as shown in figure 3, being passed through indifferent gas into reacting furnace 4
Body.Specifically, the bottom of reacting furnace 4 is connected by the first gas ducting 5 with the first aerating device 6, on the first gas ducting 5 also
It is provided with first switch control device 7.First aerating device 6 is passed through indifferent gas by the first gas ducting 5 into reacting furnace 4
Body, wherein, first switch control device 7 can control the flow of the inert gas in the first gas ducting 5.Preferably, indifferent gas
Body is Ar.And the temperature of reacting furnace is warming up to the first design temperature, the first design temperature can be excellent more than or equal to 1000 DEG C
Selection of land, the scope of the first design temperature is 1100 DEG C to 1300 DEG C, for example：First design temperature is 1100 DEG C.The temperature of reacting furnace 4
Degree reaches after the first design temperature that the first aerating device 5 stops being filled with inert gas into reacting furnace 4.
Step 204, to reacting furnace carry out vacuumize process so that the pressure of reacting furnace is down to setting pressure.
Fig. 3 d be embodiment three in reacting furnace carry out vacuumize process schematic diagram, as shown in Figure 3 d, the top of reacting furnace 4
Portion is connected with vavuum pump 8, opens vavuum pump 8 and vacuumize process is carried out to reacting furnace 4 so that the pressure of reacting furnace by vavuum pump 8
It is down to setting pressure by force.Wherein, the scope of pressure is set as 20Kpa to 80KPa, it is preferable that set pressure as 50Kpa.
Step 205, mixed gas is passed through into reacting furnace, the oxygen in silica flour and mixed gas is carried out reaction generation one
Silica steam, mixed gas, which includes inert gas and oxygen or mixed gas, includes inert gas and air, and air includes
Oxygen.
Fig. 3 e are the schematic diagram of generation silicon monoxide steam in embodiment three, and as shown in Figure 3 e, the bottom of reacting furnace 4 also leads to
Cross the second gas ducting 9 to connect with the second aerating device 10, second switch control device is additionally provided with the second gas ducting 9
11。
First aerating device 6 is passed through inert gas by the first gas ducting 5 into reacting furnace 4, meanwhile, the second inflation dress
Put 10 and oxygen be passed through into reacting furnace 4 by the second gas ducting 9, be passed through into reacting furnace 4 including inert gas with to realize and
The mixed gas of oxygen.During mixed gas is passed through, the stream of inert gas can be controlled by first switch control device 7
Measure and controlled by second switch control device 11 flow of oxygen.Wherein, in mixed gas the flow of inert gas scope
For 100mL/min to 1000mL/min, the scope of the flow of oxygen is 0.1mL/min to 1mL/min.Preferably, mixed gas
The flow of middle inert gas is 500mL/min, and the flow of oxygen is 0.1mL/min.
Or, the first aerating device 6 is passed through inert gas by the first gas ducting 5 into reacting furnace 4, meanwhile, second
Aerating device 10 is passed through air by the second gas ducting 9 into reacting furnace 4, is passed through with realizing into reacting furnace 4 including inertia
The mixed gas of gas and air.During mixed gas is passed through, indifferent gas can be controlled by first switch control device 7
The flow of body and the flow that air is controlled by second switch control device 11.Wherein, in mixed gas inert gas flow
Scope be 100mL/min to 1000mL/min, the scope of the flow of air is 0.1mL/min to 1mL/min.Preferably, mix
The flow for closing inert gas in gas is 500mL/min, and the flow of air is 0.5mL/min.
It is passed through after above-mentioned mixed gas, the scope of the partial pressure of oxygen is 5Pa to 50Pa in reacting furnace 4, it is preferable that oxygen
Partial pressure can be 10Pa, so as to be formd in reacting furnace 4 " micro oxygen environment ", silica flour will not be complete in " in micro oxygen environment "
It is complete to be oxidized.Therefore mixed gas is passed through after entering reacting furnace 4 from the bottom of reaction vessel 2 in this step, silica flour meeting and is mixed
Close the oxygen in gas and carry out initial reaction generation silicon monoxide steam 12.
Step 206, under the control of the air-flow of mixed gas, silicon monoxide steam carries out anti-in target base plate with oxygen
Silicon dioxide layer should be generated.
Fig. 3 f are the schematic diagram that silicon dioxide layer is generated in embodiment three, as illustrated in figure 3f, because mixed gas is from reaction
The bottom of stove 4 is passed through, therefore mixed gas can produce upward air-flow (in figure shown in arrow), an oxygen afterwards into reacting furnace 4
SiClx steam 12 is risen under the control of upward air-flow up to target base plate 3, then in target base plate 3 again with gaseous mixture
Oxygen 13 in body carries out reaction generation silicon dioxide layer 14.
In this step, silicon monoxide steam 12 carries out reaction life in target base plate 3 in setting time section with oxygen 13
Into silicon dioxide layer 14, so that silicon dioxide layer 14 possesses setting thickness.Therefore this step can be by controlling silicon monoxide steam
12 and reaction time of oxygen 13 control the thickness of silicon dioxide layer 14.It should be noted that：Control silicon dioxide layer 14
The method of thickness include but is not limited to by the size for the setting time section for controlling silicon monoxide steam 12 and oxygen 13 to react come
Realize, other modes can also be used in actual applications, be will not enumerate herein.
In summary, the present embodiment uses chemical vapour deposition technique.
Step 207, control reacting furnace temperature so that the temperature of reacting furnace is down into the second design temperature with setting speed, and
The fire door for opening reacting furnace carries out Temperature fall so that the temperature of reacting furnace is down into the 3rd design temperature, and the second design temperature is more than
3rd design temperature.
In the present embodiment, the second design temperature is less than 1000 DEG C, and the 3rd design temperature is room temperature.Preferably, the second setting
Temperature is 600 DEG C.
The temperature of reacting furnace is down to the 3rd design temperature from the first design temperature in this step, to facilitate target base plate
Taken out from reacting furnace.
Step 208, the target base plate for being formed with silicon dioxide layer taken out from reacting furnace.
Step 209, silicon dioxide layer peeled off from target base plate, form quartz glass substrate.
Silicon dioxide layer as quartz glass substrate under being peeled off from target base plate.
In the manufacture method for the quartz glass substrate that the present embodiment is provided, make in reacting furnace silica flour and oxygen reaction with
Silicon dioxide layer is generated in target base plate, silicon dioxide layer is peeled off from target base plate and forms quartz glass substrate, so as to drop
Low manufacturing cost, reduces difficulty of processing and avoids environment is had undesirable effect.The manufacture method of the present embodiment
Cost of material is low, low for equipment requirements, is easy to the manufacture of large scale quartz glass substrate.In the preparation process of the present embodiment
One design temperature will be less than silicon oxide particle melting temperature in the prior art, so that temperature when reducing reaction.
Fig. 4 is a kind of structural representation of the manufacturing equipment for quartz glass substrate that the embodiment of the present invention three is provided, such as Fig. 4
Shown, the manufacturing equipment of the quartz glass substrate includes：Reaction vessel 2, reacting furnace 4 and aerating device, target base plate 3 and reaction
Container 2 is positioned in reacting furnace 4, and target base plate 3 is located at the top of reaction vessel 2.Reaction vessel 2 is used to place silica flour 1；Inflation dress
Put for being filled with oxygen into reacting furnace 4；4 reacting furnaces 4 be used in the first design temperature and setting pressure under when make silica flour and
Oxygen reaction in target base plate 3 to generate silicon dioxide layer, and silicon dioxide layer forms quartzy glass after being peeled off from target base plate 3
Glass substrate.
Aerating device is specifically passed through mixed gas into reacting furnace 4, and mixed gas includes inert gas and oxygen or mixed
Closing gas includes inert gas and air, and oxygen is passed through into reacting furnace 4 to realize.Aerating device includes the first aerating device 6
With the second aerating device 10, the first aerating device 6 is used to be passed through inert gas into reacting furnace 4, and the second aerating device 10 is used for
Oxygen or air are passed through into reacting furnace 4.
Further, the first aerating device 6 is connected by the first gas ducting 5 with reacting furnace 4, on the first gas ducting 5
First switch control device 7 is provided with, the second aerating device 10 is connected by the second gas ducting 9 with reacting furnace 4, the second inflation
Second switch control device 11 is provided with pipeline 9.First switch control device 7 is used for the flow for controlling inert gas, second
Switch controlling device 11 is used to control the flow of oxygen or the flow of air.Specifically, the first aerating device 6 fills by first
Feed channel 5 is connected with the bottom of reacting furnace 4, and the second aerating device 10 is connected by the bottom of the second gas ducting 9 and reacting furnace 4
It is logical.
Further, the manufacturing equipment of the quartz glass substrate also includes vavuum pump 8.Vavuum pump 8 is used to enter reacting furnace 4
Row vacuumize process is so that the pressure of reacting furnace 4 is down to setting pressure.Vavuum pump 8 is connected with the top of reacting furnace 4.
The manufacturing equipment for the quartz glass substrate that the present embodiment is provided can be used for realizing above-described embodiment one or embodiment
The manufacture method of two quartz glass substrates provided, specifically describes and can be found in above-described embodiment one or embodiment two.
In the manufacturing equipment for the quartz glass substrate that the present embodiment is provided, make in reacting furnace silica flour and oxygen reaction with
Silicon dioxide layer is generated in target base plate, silicon dioxide layer is peeled off from target base plate and forms quartz glass substrate, so as to drop
Low manufacturing cost, reduces difficulty of processing and avoids environment is had undesirable effect.The manufacture method of the present embodiment
Cost of material is low, low for equipment requirements, is easy to the manufacture of large scale quartz glass substrate.In the preparation process of the present embodiment
One design temperature will be less than silicon oxide particle melting temperature in the prior art, so that temperature when reducing reaction.
It is understood that the principle that embodiment of above is intended to be merely illustrative of the present and the exemplary implementation that uses
Mode, but the invention is not limited in this.For those skilled in the art, the essence of the present invention is not being departed from
In the case of refreshing and essence, various changes and modifications can be made therein, and these variations and modifications are also considered as protection scope of the present invention.
Claims (9)
1. a kind of manufacture method of quartz glass substrate, it is characterised in that including：
Target base plate and reaction vessel are positioned in reacting furnace, the target base plate is located above the reaction vessel, described
Silica flour is placed with reaction vessel；
Mixed gas is passed through into the reacting furnace, the oxygen in the silica flour and the mixed gas is carried out reaction generation one
Silica steam, the mixed gas, which includes inert gas and oxygen or the mixed gas, includes inert gas and air,
The air includes oxygen；
Under the control of the air-flow of the mixed gas, the silicon monoxide steam enters in the target base plate with the oxygen
Row reaction generation silicon dioxide layer；
The silicon dioxide layer is peeled off from the target base plate, quartz glass substrate is formed.
2. the manufacture method of quartz glass substrate according to claim 1, it is characterised in that described to make silicon in reacting furnace
Powder and oxygen reaction before generating silicon dioxide layer in the target base plate also to include：
Inert gas is passed through into the reacting furnace, and the temperature of the reacting furnace is warming up to the first design temperature；
Vacuumize process is carried out to the reacting furnace so that the pressure of the reacting furnace is down to setting pressure.
3. the manufacture method of quartz glass substrate according to claim 2, it is characterised in that described to make silica flour anti-with oxygen
Should with the target base plate generate silicon dioxide layer after also include：
The temperature of reacting furnace is controlled so that the temperature of reacting furnace is down into the second design temperature with setting speed, and opens reacting furnace
Fire door carries out Temperature fall so that the temperature of reacting furnace is down into the 3rd design temperature, and second design temperature is more than the described 3rd
Design temperature；
The target base plate for being formed with silicon dioxide layer is taken out from the reacting furnace.
4. the manufacture method of quartz glass substrate according to claim 1, it is characterised in that the target base plate with it is described
The scope of the distance between reaction vessel is 100mm to 1000mm.
5. the manufacture method of quartz glass substrate according to claim 3, it is characterised in that first design temperature is big
In or equal to 1000 DEG C, second design temperature is less than 1000 DEG C, and the 3rd design temperature is room temperature.
6. the manufacture method of quartz glass substrate according to claim 1, it is characterised in that the mixed gas includes lazy
Property G＆O when, the scope of the flow of inert gas is 100mL/min to 1000mL/min, oxygen in the mixed gas
Flow scope be 0.1mL/min to 1mL/min；Or, it is described mixed when the mixed gas includes inert gas and air
The scope for closing the flow of inert gas in gas is 100mL/min to 1000mL/min, and the scope of the flow of air is 0.1mL/
Min to 1mL/min；
The scope of the partial pressure of the oxygen is 5Pa to 50Pa.
7. the manufacture method of quartz glass substrate according to claim 2, it is characterised in that the scope of the setting pressure
For 20Kpa to 80KPa.
8. a kind of manufacturing equipment of quartz glass substrate, it is characterised in that including：Reaction vessel, reacting furnace and aerating device, mesh
Mark substrate and reaction vessel are positioned in reacting furnace, and the target base plate is located above the reaction vessel；
The reaction vessel, for placing silica flour；
The aerating device, for being passed through mixed gas into reacting furnace, the mixed gas include inert gas and oxygen or
Mixed gas described in person includes inert gas and air, and the air includes oxygen, oxygen is passed through into reacting furnace to realize；
The reacting furnace, for making silica flour and oxygen reaction generate silicon dioxide layer, the dioxy in the target base plate
SiClx layer forms quartz glass substrate after being peeled off from the target base plate.
9. the manufacturing equipment of quartz glass substrate according to claim 8, it is characterised in that the aerating device includes the
One aerating device and the second aerating device, first aerating device are connected by the first gas ducting with reacting furnace, and described
First switch control device is provided with one gas ducting, second aerating device is connected by the second gas ducting and reacting furnace
It is logical, it is provided with second switch control device on second gas ducting；
First aerating device, for being passed through inert gas into the reacting furnace；
Second aerating device, for being passed through oxygen or air into the reacting furnace；
The first switch control device, the flow for controlling inert gas；
The second switch control device, for controlling the flow of oxygen or the flow of air.
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| CN201610849794.8A CN106467355B (en) | 2016-09-26 | 2016-09-26 | The manufacture method and manufacturing equipment of quartz glass substrate |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6066519A (en) * | 1998-04-16 | 2000-05-23 | Advanced Micro Devices, Inc. | Semiconductor device having an outgassed oxide layer and fabrication thereof |
| CN103896283A (en) * | 2014-02-19 | 2014-07-02 | 上海璞泰来新材料技术有限公司 | Manufacturing method and manufacturing device of SiO powder |
| TW201527243A (en) * | 2013-09-30 | 2015-07-16 | Techno Quartz Inc | Quartz glass component and method for producing quartz glass component |
-
2016
- 2016-09-26 CN CN201610849794.8A patent/CN106467355B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6066519A (en) * | 1998-04-16 | 2000-05-23 | Advanced Micro Devices, Inc. | Semiconductor device having an outgassed oxide layer and fabrication thereof |
| TW201527243A (en) * | 2013-09-30 | 2015-07-16 | Techno Quartz Inc | Quartz glass component and method for producing quartz glass component |
| CN103896283A (en) * | 2014-02-19 | 2014-07-02 | 上海璞泰来新材料技术有限公司 | Manufacturing method and manufacturing device of SiO powder |
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