CN106463614A - Method for manufacturing electronic component - Google Patents
Method for manufacturing electronic component Download PDFInfo
- Publication number
- CN106463614A CN106463614A CN201580024554.8A CN201580024554A CN106463614A CN 106463614 A CN106463614 A CN 106463614A CN 201580024554 A CN201580024554 A CN 201580024554A CN 106463614 A CN106463614 A CN 106463614A
- Authority
- CN
- China
- Prior art keywords
- electronic unit
- resin
- manufacture method
- coated
- bonding agent
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/01—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/10—Magnetoresistive devices
Abstract
The purpose of the present invention is to provide a method for manufacturing an electronic component in which a wafer, to which groove-shaped machining has been applied, and a porous member are bonded by an adhesive, wherein the grooves formed in the wafer can be sufficiently filled by the adhesive. A method for manufacturing an electronic component (1) provided with a magnetic substrate (120) and a semiconductor wafer (125) in which grooves are provided on at least one of the main surfaces, one of the main surfaces of the semiconductor wafer (125) and one of the surfaces of the magnetic substrate (120) being bonded by a resin layer (135). The method for manufacturing the electronic component (1) is provided with a coating step for applying a coating resin (120a) on one of the surfaces of the magnetic substrate (120), and a bonding step for bonding, after the coating step, one of the main surfaces of the semiconductor wafer (125) and the surface of the magnetic substrate (120) to which the coating resin has been applied.
Description
Technical field
The present invention relates to the manufacture method of electronic unit, chip and the porous of the processing of channel form more particularly, to it have been carried out
The manufacture method of the quality structure part electronic unit glued by bonding agent.
Background technology
Chip as the processing being carried out channel form and the porous member electricity glued by bonding agent
Subassembly, such as the hall effect devices described in known patent document 1.The manufacture method of this electronic unit is (hereinafter referred to as existing
The manufacture method of some electronic units) in, in order to form the magnetoresistance effect film of curved shape, by photoetching and etching to by InSb
The block (chip) of composition implements the processing of channel form.Then, shape on the interarea of the block of the processing being carried out channel form
Resin layer, this resin bed is carried out bonding as bonding agent to the magnetic substrate such as ferrite and this block.Now, existing
The manufacture method of electronic unit in, be fully filled the resin as bonding agent in the groove of interarea being formed on block
Become difficulty.As a result, when block afterwards grinds, produce magnetic resistance effect in the groove periphery being not filled with resin
Answer crackle or the otch of film.Further, lapping rejects enters the groove being not filled with resin, in magnetoresistance intermembranous generation short circuit.Enter
And, if implementing etching in subsequent handling, there is the InSb quilt constituting magnetoresistance effect film in the groove periphery being filled with resin
Corrosion and make magnetoresistance effect film break problem.
Citation
Patent document
Patent document 1：JP Laid-Open 9-51135 publication
Content of the invention
- invention technical problem to be solved-
It is an object of the invention to, provide a kind of manufacture method of electronic unit, in the processing being carried out channel form
Can be abundant by bonding agent in chip and the porous member manufacture method of electronic unit glued by bonding agent
Be filled in the groove that chip is formed.
- for solve the means of technical problem-
The manufacture method of the electronic unit that the 1st mode of the present invention is related to is that possess to be provided with groove at least one interarea
Chip and an interarea of porous member and described chip and any one face of described porous member by bonding agent
The manufacture method of glued electronic unit, it is characterised in that possess：Apply in any one face of described porous member
Apply the painting process being coated with resin；And to an interarea of described chip and described Porous after described painting process
Component coated described in be coated with the face of resin and carry out the bonding process of bonding.
In the manufacture method of electronic unit that 1st mode of the present invention is related to, chip is being glued with porous member
Before connecing, resin is coated with to porous member.Thus, bonding agent can for example be suppressed in the porous members such as ferrite
Immerse in the pore of this porous member.As a result, bonding agent will not be absorbed by porous member, but is filled in chip
The groove set by interarea in.
The manufacture method of the electronic unit that the 2nd mode of the present invention is related to, it is characterised in that be related in described 1st mode
The manufacture method of electronic unit in, the material of described chip is InSb.
InSb is easy to due to having splitting surface produce above-mentioned crackle or otch.Therefore, the electronics the 1st mode being related to
The electronic unit that the manufacture method of part is applied to be used as InSb material is particularly efficient.
The manufacture method of the electronic unit that the 3rd mode of the present invention is related to is it is characterised in that in any of the above-described electronic unit
Manufacture method in, viscous under its uncured state of bonding agent described in ratio of viscosities under the described its uncured state being coated with resin
Du Genggao.
In the manufacture method of the electronic unit that the 3rd mode of the present invention is related to, it is coated with its uncured state of resin
Its uncured state of ratio of viscosities bonding agent under viscosity higher.Thus, even if being coated with resin to be in its uncured state, also can
The immersion of the suppression pore to porous member for the bonding agent.Therefore, it can make to be coated with resin and bonding agent heat cure simultaneously, can
To simplify its manufacturing process further.
- invention effect-
In accordance with the invention it is possible in groove set by bonding agent is fully filled in chip.
Brief description
Fig. 1 is the top view of electronic unit that produces of manufacture method by the use of the electronic unit as an embodiment.
Fig. 2 is the profile in the A-A section of Fig. 1.
Fig. 3 is the figure of the operation of the manufacture method of the electronic unit being denoted as an embodiment.
Fig. 4 is the figure of the operation of the manufacture method of the electronic unit being denoted as an embodiment.
Fig. 5 is the figure of the operation of the manufacture method of the electronic unit being denoted as an embodiment.
Fig. 6 is the figure of the operation of the manufacture method of the electronic unit being denoted as an embodiment.
Fig. 7 is the figure of the operation of the manufacture method of the electronic unit being denoted as an embodiment.
Fig. 8 is the figure of the operation of the manufacture method of the electronic unit being denoted as an embodiment.
Fig. 9 is the figure of the operation of the manufacture method of the electronic unit being denoted as an embodiment.
Figure 10 is the figure of the operation of the manufacture method of the electronic unit being denoted as an embodiment.
Figure 11 is the figure of the operation of the manufacture method of the electronic unit being denoted as an embodiment.
Figure 12 be in the 1st sample by micro- sem observation magnetoresistance effect film between photo obtained from groove duplication.
Figure 13 be in the 2nd sample by micro- sem observation magnetoresistance effect film between photo obtained from groove duplication.
Specific embodiment
(composition of electronic unit, reference Fig. 1 and Fig. 2)
It is explained with reference to the electronic unit 1 manufacturing by the use of the manufacture method of the electronic unit as an embodiment.
Hereinafter, the direction orthogonal with the interarea of electronic unit 1 is defined as z-axis direction.Further, will be along when overlooking from z-axis direction
The direction on the long side of electronic unit 1 is defined as x-axis direction, the direction of the minor face along electronic unit 1 is defined as y-axis direction.
Wherein, x-axis, y-axis and z-axis are mutually orthogonal.Further, so that locality specific in x/y plane for the short-circuiting electrode 30, will be by magnetic
The short-circuiting electrode 30 that resistance thick film 25 covers and actually can't see from the positive direction side in z-axis direction is shown in Fig. 1.
As shown in figure 1, electronic unit 1 is magnetoresistance effect film 25 being configured to be become, by resin bed 35, the magnetoelectricity around covering
Change element.Further, electronic unit 1 is also equipped with substrate 20 and multiple short-circuiting electrode in addition to magnetoresistance effect film 25, resin bed 35
30.
Substrate 20 is the porous member with ferrite as material, in approximately parallelepiped body shape.Further, as shown in Fig. 2 substrate
20 negative direction sides being arranged on the z-axis direction in electronic unit 1, furthermore the surface of substrate 20 be made up of polyimide resin
Coated film 20a cover.
Magnetoresistance effect film 25 is the thin with InSb as material of the positive direction side for substrate 20 positioned at z-axis direction
Film.Further, as shown in figure 1, magnetoresistance effect film 25 is when being observed from z-axis direction, in the negative direction side direction from x-axis direction
Positive direction side zigzag ground is advancing, so-called curved shape.
Short-circuiting electrode 30 is the electrode with aluminium as material, is in generally rectangular when observing from z-axis direction.Further,
The face of the negative direction side in z-axis direction (is claimed by the face of the negative direction side in the z-axis direction in magnetoresistance effect film 25 for the short-circuiting electrode 30 below
For lower surface) on vacate be positioned apart from multiple.
As shown in Fig. 2 the layer that resin bed 35 is made up of the epoxy resin between substrate 20 and magnetoresistance effect film 25.
Further, resin bed 35 undertakes the effect of adhesive base plate 20 and magnetoresistance effect film 25 in manufacture method described later.In addition, substrate 20
Surface coated film 20a cover, therefore coated film 20a is between resin bed 35 and substrate 20.
As constructed as above in electronic unit 1, the magnetic resistance value of magnetoresistance effect film 25 is with strong from the outside magnetic field applying
Degree change and change.Therefore, electric current circulates in magnetoresistance effect film 25, converts unit by this electronic unit 1 as magnetoelectricity
Part works.
(manufacture method, with reference to Fig. 3～Figure 11)
Hereinafter the manufacture method of the electronic unit as an embodiment is illustrated.
First, prepare the semiconductor wafer 125 being made up of the monocrystal of InSb.Next, as shown in figure 3, by evaporation
Form the film 130 of aluminium in an interarea of semiconductor wafer 125.
On the film 130 of the aluminium being formed, by being lithographically formed Resist patterns RP1.And, against corrosion for being formed
The aluminium film 130 of agent pattern RP1, is etched by Wet-type etching, as shown in figure 4, remove aluminium film 130 not by resist
The part that pattern RP1 covers.
Next, for the residue removing the solution that Wet-type etching is used, being washed.Furthermore, using stripper stripping
Resist patterns RP1 in aluminium film 130.Then, remove the residue of stripper by washing, and so that it is dried.By this
Operation, as shown in figure 5, form the conductive pattern corresponding to multiple short-circuiting electrodes 30 on the surface of semiconductor wafer 125.
After forming the conductive pattern corresponding to multiple short-circuiting electrodes 30, according to order (photoetching and erosion same as described above
Carve), as shown in fig. 6, an interarea in semiconductor wafer 125 forms multiple grooves 150.Thus, in semiconductor wafer 125
One interarea forms the pattern of the curved shape corresponding to magnetoresistance effect film 25.
Next, preparing the magnetic substrate 120 (corresponding with substrate 20) that ferrite is formed.And, as shown in fig. 7,
Using spin coater the surface of magnetic substrate 120 coating be made up of polyimides system resins liquid be coated with resin
120a.Then, by making to be coated with resin 120a heat cure, coating is implemented to the surface of magnetic substrate 120.
Further, with the operation shown in Fig. 7 concurrently using spin coater, as shown in figure 8, in semiconductor wafer 125
Surface applies the epoxy resin of liquid, thus arranges resin bed 135.And, as shown in figure 9, by magnetic substrate 120 and half
In the state of conductor chip 125 clamping resin bed 135, with the pressure of 0.2Pa, these are pressurizeed.Now, in order to prevent gas
Bubble is mixed into resin bed 135, and these pressurization is carried out while vacuumizing.These are heated simultaneously, thus make resin
Layer 135 solidification.Thus, resin bed 135 works as the bonding agent that magnetic substrate 120 is bonding with semiconductor wafer 125.
And, it is ground from another interarea side of semiconductor wafer 125 and etches, as shown in Figure 10, make to be filled with
Multiple grooves 150 of epoxy resin and magnetoresistance effect film 25 expose.
Finally, as shown in figure 11, cut off by will be provided with the mother substrate of multiple electronic units 1 with wafer dicing saw etc., thus single
The multiple electronic units 1 of individual chemical conversion.
(effect)
In the manufacture method of the electronic unit as an embodiment, even if the magnetic base of bonding semiconductor wafer 125
Plate 120 is the porous members such as ferrite it is also possible to be fully filled the epoxy resin as bonding agent in being embodied in half
In the groove 150 of the interarea of conductor chip 125.Its reason is as follows.First, the manufacture method using existing electronic unit cannot
The reason bonding agent is fully filled in groove be, the resin as bonding agent can be immersed in and is made up of porous member
In the pore of magnetic substrate.Especially, while vacuumizing in the case of bonding magnetic substrate and block (chip), due to
The immersion of the pore of resin magnetropism structure base board can be promoted, therefore the resin and magnetic substrate between becomes between block (chip)
Not enough.As a result, resin can not fully be filled in the groove of the interarea being arranged on block.On the other hand, real as one
In the manufacture method of the electronic unit applying example, before semiconductor wafer 125 is bonding with magnetic substrate 120, to magnetic
Coating is implemented on the surface of substrate 120.Thus, the immersion of the pore of epoxy resin magnetropism structure base board 120 can be suppressed.As knot
Really, the epoxy resin between semiconductor wafer 125 and magnetic substrate 120 will not become not enough, and epoxy resin can be fully
Be filled in the groove 150 of the interarea being arranged on semiconductor wafer 125.In addition, as the system solving existing electronic unit
Make other means of the problem of method it is considered to increase the coating amount of resin.But, due to the state on the surface of magnetic substrate
Deviation is larger, therefore industrially the coating amount of the resin meeting with each state is managed being difficult.
Here, present inventor is in order to confirm that above-mentioned effect is tested.In experiment, employ：Be equivalent to
The 1st sample to the electronic unit 1 that the surface of magnetic substrate 120 is implemented coating and produced；Not to magnetic substrate 120
Electronic unit that surface is implemented coating and produced, i.e. the 2nd sample.And, the magnetic resistance effect of each sample is observed by microscope
Answer intermembranous groove.Wherein, Figure 12, the color part in 13 be magnetoresistance effect film, grey parts be as bonding agent resin,
White portion is the part being not filled with bonding agent.
As shown in figure 12, in the 1st sample it is known that：Resin is sufficiently filled un-interrupted in groove.On the other hand,
In the 2nd sample, as shown in figure 13 it is known that resin interrupts in many places and is not sufficiently filled in groove.That is, can
Know：By the surface enforcement coating to magnetic substrate 120, thus epoxy resin is sufficiently filled in semiconductor wafer 125
The groove 150 set by interarea in.
Further, epoxy resin fully spreads all over the groove 150 of the interarea being implemented in semiconductor wafer 125, thus can press down
The crackle of magnetoresistance effect film 25 during grinding semiconductor chip 125 after system or the short circuit between otch, magnetoresistance effect film 25, erosion
Broken string of magnetoresistance effect film 25 during quarter etc..
And then, in electronic unit 1, use InSb as the material of magnetoresistance effect film 25.InSb rives due to having
Face, therefore be easy to produce above-mentioned crackle or otch.Therefore, the manufacture method of the electronic unit as an embodiment is applied to by
InSb is used as the electronic unit of material, is particularly efficient.
(variation)
Manufacture method as the electronic unit of variation and as an embodiment electronic unit manufacture method phase
Dissimilarity is：The heating of the viscosity of resin of coating magnetic substrate 120 and this resin, the timing of solidification.Carry out below specifically
Explanation.
In the manufacture method as the electronic unit of variation, make to be coated with the viscosity of its uncured state of resin 120a
The viscosity of its uncured state being coated with resin 120a in the manufacture method of the electronic unit being used for an embodiment is higher.And
And, make to be coated with before resin 120a is heating and curing, magnetic substrate 120 is bonding with semiconductor wafer 125.Now, right
For the viscosity as the epoxy resin of bonding agent, implement with as one in the manufacture method of the electronic unit as variation
It is not different in the manufacture method of electronic unit of example.On the other hand, the viscosity being coated with resin 120a is raised to not
The degree of the pore of magnetic substrate 120 can be immersed.Then, resin will be coated with heat simultaneously and make its thermosetting with epoxy resin
Change.
As above, in the manufacture method as the electronic unit of variation, due to making to be coated with resin 120a and asphalt mixtures modified by epoxy resin
Fat heat cure simultaneously, therefore so that this manufacturing process manufacture method of being used for the electronic unit of an embodiment is simpler.Its
In it is impossible to make the viscosity of the epoxy resin as bonding agent bring up to the degree of the pore that will not immerse magnetic substrate 120.This
It is because：If improving the viscosity of the epoxy resin as bonding agent, this epoxy resin can not be fully filled in groove 150
Interior.
In the manufacture method as the electronic unit of variation, other are constituted and the ministry of electronics industry as a described embodiment
The manufacture method of part is same.Therefore, the manufacture method base of its action effect and the electronic unit as a described embodiment
Same in basis.
(other embodiment)
The manufacture method of electronic unit according to the present invention is not defined to described embodiment, can enter in its main scope
The various changes of row.For example, in the described embodiment, although being coated with resin to use polyimides system resins,
Epoxy, acrylic acid series, silicone-based resin can also be used as being coated with resin.Further, bonding agent is not limited to epoxy tree
Fat or polyimides system, acrylic acid series and silicone-based resin.Further, in the described embodiment although having made magnetoelectricity
Inverting element, but the manufacture method of electronic unit according to the present invention is not limited to the manufacture method of hall effect devices.
- industrial applicability-
As above, the present invention is useful in the manufacture method of electronic unit, in the crystalline substance of the processing being carried out channel form
In piece and the porous member manufacture method of electronic unit glued by bonding agent, can be abundant by bonding agent
To be filled in be superior on this point in the groove that chip is formed.
- symbol description-
1 electronic unit
20 substrates
20a coated film
25 magnetoresistance effect films
30 short-circuiting electrodes
35th, 135 resin beds (bonding agent)
40th, 45 connection electrode
120 magnetic substrate (porous member)
120a is coated with resin
125 semiconductor wafers (chip)
150 grooves
Claims (3)
1. a kind of manufacture method of electronic unit, this electronic unit possesses：At least one interarea be provided with the chip of groove with
And porous member, an interarea of described chip is glued by bonding agent with any one face of described porous member,
The manufacture method of described electronic unit is characterised by possessing：
Painting process, is coated with resin in any one face of described porous member；And
Bonding process, after described painting process, coated to an interarea of described chip and described porous member
Described in be coated with the face of resin and carry out bonding.
2. electronic unit according to claim 1 manufacture method it is characterised in that
The material of described chip is InSb.
3. electronic unit according to claim 1 and 2 manufacture method it is characterised in that
The viscosity under its uncured state of bonding agent described in ratio of viscosities under the described its uncured state being coated with resin is higher.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014-112572 | 2014-05-30 | ||
| JP2014112572 | 2014-05-30 | ||
| PCT/JP2015/063599 WO2015182370A1 (en) | 2014-05-30 | 2015-05-12 | Method for manufacturing electronic component |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN106463614A true CN106463614A (en) | 2017-02-22 |
| CN106463614B CN106463614B (en) | 2019-02-22 |
Family
ID=54698708
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201580024554.8A Expired - Fee Related CN106463614B (en) | 2014-05-30 | 2015-05-12 | The manufacturing method of electronic component |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP6226069B2 (en) |
| CN (1) | CN106463614B (en) |
| WO (1) | WO2015182370A1 (en) |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60257187A (en) * | 1984-06-01 | 1985-12-18 | Denki Onkyo Co Ltd | Manufacture of semiconductor element |
| JPH0878755A (en) * | 1994-09-07 | 1996-03-22 | Murata Mfg Co Ltd | Magnetoelectric transducer |
| CN1906142A (en) * | 2004-01-17 | 2007-01-31 | 德古萨公司 | Method of preventing substrate colour changes on impregnation |
| CN102077324A (en) * | 2008-06-27 | 2011-05-25 | 应用材料股份有限公司 | Prevention and reduction of solvent and solution penetration into porous dielectrics using a thin barrier layer |
| CN102265714A (en) * | 2008-12-22 | 2011-11-30 | 富士通株式会社 | Electronic component and method for manufacturing same |
| JP5885513B2 (en) * | 2012-01-13 | 2016-03-15 | アイシン化工株式会社 | Microporous layer forming paste composition and method for producing the same |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000269567A (en) * | 1999-03-18 | 2000-09-29 | Tdk Corp | Semiconductor magnetoresistive element |
-
2015
- 2015-05-12 JP JP2016523408A patent/JP6226069B2/en not_active Expired - Fee Related
- 2015-05-12 WO PCT/JP2015/063599 patent/WO2015182370A1/en active Application Filing
- 2015-05-12 CN CN201580024554.8A patent/CN106463614B/en not_active Expired - Fee Related
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60257187A (en) * | 1984-06-01 | 1985-12-18 | Denki Onkyo Co Ltd | Manufacture of semiconductor element |
| JPH0878755A (en) * | 1994-09-07 | 1996-03-22 | Murata Mfg Co Ltd | Magnetoelectric transducer |
| CN1906142A (en) * | 2004-01-17 | 2007-01-31 | 德古萨公司 | Method of preventing substrate colour changes on impregnation |
| CN102077324A (en) * | 2008-06-27 | 2011-05-25 | 应用材料股份有限公司 | Prevention and reduction of solvent and solution penetration into porous dielectrics using a thin barrier layer |
| CN102265714A (en) * | 2008-12-22 | 2011-11-30 | 富士通株式会社 | Electronic component and method for manufacturing same |
| JP5885513B2 (en) * | 2012-01-13 | 2016-03-15 | アイシン化工株式会社 | Microporous layer forming paste composition and method for producing the same |
Also Published As
| Publication number | Publication date |
|---|---|
| JPWO2015182370A1 (en) | 2017-04-20 |
| WO2015182370A1 (en) | 2015-12-03 |
| JP6226069B2 (en) | 2017-11-08 |
| CN106463614B (en) | 2019-02-22 |
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Granted publication date: 20190222 Termination date: 20210512 |