CN106451065B - Semiconductor laser constant current driving system - Google Patents

Semiconductor laser constant current driving system Download PDF

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Publication number
CN106451065B
CN106451065B CN201610879882.2A CN201610879882A CN106451065B CN 106451065 B CN106451065 B CN 106451065B CN 201610879882 A CN201610879882 A CN 201610879882A CN 106451065 B CN106451065 B CN 106451065B
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module
constant current
singlechip
semiconductor laser
current driving
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CN106451065A (en
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郭维振
刘玉凤
马宁
郭�东
钟灿鸿
董琳琳
吉超超
周鹏磊
张杨
姜再欣
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Beijing Reallight Technology Co ltd
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Beijing Reallight Technology Co ltd
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/04Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042Electrical excitation ; Circuits therefor
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02BCLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B20/00Energy efficient lighting technologies, e.g. halogen lamps or gas discharge lamps
    • Y02B20/40Control techniques providing energy savings, e.g. smart controller or presence detection

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

The invention discloses a semiconductor laser constant current driving system which comprises a line filter, an AC/DC and DC/DC module, a singlechip module, an incremental encoder driving module, an ADC, a DAC module, a constant current driving module, a liquid crystal display module, an information storage module and a power detection module. The synchronous slow start protection and short circuit protection circuit of the constant current driving module and the current limiting function based on the singlechip module can protect the laser from damage such as surge, static electricity and overcurrent, and the laser use is prolonged to the greatest extent.

Description

Semiconductor laser constant current driving system
Technical Field
The invention belongs to the technical field of constant current driving, and relates to a semiconductor laser constant current driving system.
Background
The semiconductor laser has the characteristics of high efficiency, small volume, light weight, low price and the like, so the semiconductor laser is widely applied to the fields of military, medical treatment, communication and the like and plays an irreplaceable role. Since such lasers are very sensitive to surges, static electricity, overcurrent, etc. of the driving current source, not only the laser power value may be damaged, but also the laser lifetime may be directly affected. Therefore, in practical application, the high requirements on the performance, protection and the like of the driving power supply are met.
For a constant current driving system of a semiconductor laser, constant current driving is generally required to set a current limit value according to rated working currents of different lasers, and for lasers with longer use time, an output power value is generally required to be calibrated, which requires that the constant current driving system provides a simple method for dynamically adjusting related parameters.
At present, the constant current driving of the semiconductor laser has more problems to be optimally solved, for example, the current limiting protection of a constant current driving module is generally set by hardware, and the adjustment is not convenient enough; when the lasers with anode connector shells are provided with common constant current drive, the semiconductor lasers are required to be insulated from the system shell additionally, and the difficulty is brought to part of structural design, and the heat dissipation performance of the lasers is reduced due to insulation treatment; for the traditional method for setting the level of the analog potentiometer, the fine current adjustment is generally difficult, and the failure of the potentiometer connection line can have unpredictable influence on the current of the laser; the slow start protection and short circuit protection functions of the laser cannot be synchronized, and the current method for providing short circuit protection for the laser by using a relay switch mode can introduce noise problems and the like into a system.
Disclosure of Invention
The invention aims to provide a semiconductor laser constant current driving system, which optimizes the protection function of the constant current driving system and improves the use safety and convenience of a semiconductor laser compared with the prior art.
The technical scheme adopted by the invention is that the device comprises a line filter, an AC/DC and DC/DC module, a singlechip module, an incremental encoder driving module, an ADC module, a DAC module, a constant current driving module, a liquid crystal display module, an information storage module and a power detection module. The input ends of the AC/DC and DC/DC modules are connected with a line filter, and the output ends of the AC/DC and DC/DC modules output + V, GND and-V; the incremental encoder driving module is connected with the singlechip module, and the singlechip counts the pulse times generated by the incremental encoder; the DAC module is respectively connected with the singlechip module and the constant current driving module, the singlechip sets the pulse count value of the incremental encoder to the DAC module, and the DAC module outputs corresponding voltage to the constant current driving module to control the LD current; the ADC module is connected with the constant current driving module, the power detection module and the singlechip module, the power detection module detects the current value of the photodiode in the semiconductor laser, and the ADC module acquires the current value of the semiconductor laser and the current value of the photodiode and transmits the current value of the semiconductor laser and the current value of the photodiode to the singlechip module; the single-chip microcomputer module is connected to the information storage module and the liquid crystal display module, receives P-I curve data of the output power value of the semiconductor laser and the current value of the photodiode through the serial port, transmits a conversion coefficient to the information storage module after fitting operation of the single-chip microcomputer, reads the current of the semiconductor laser through the ADC module, calculates the output power value through the coefficient obtained by calculation, and displays the power value of the semiconductor laser in the display module; the constant current driving module is respectively connected with the DAC module and the ADC module and comprises an LD slow start and LD short circuit protection circuit with synchronous realization, one end of a first resistor (R1) is connected with one end of a first capacitor (C2), the cathode of a diode (D2) and the grid of a first MOS tube (Q2), the grid of a second MOS tube (Q3) is connected with an ENABLE connection node, the drain of the first MOS tube (Q2) is connected with the homodromous input end of the operational amplifier, the anode of the diode (D2), the source of the first MOS tube (Q2), the other end of the first resistor (R1) is connected with-V, and the other end of the first capacitor (C2) is grounded; the drain electrode of the second MOS tube (Q3) and the anode of the semiconductor Laser (LD) are connected together, the source electrode of the second MOS tube (Q3), the drain electrode of the constant current adjusting tube (Q1) and the cathode of the semiconductor Laser (LD) are connected together, one end of the constant current sampling resistor (R2) is connected with the source electrode of the constant current adjusting tube (Q1), the other end of the constant current sampling resistor is connected with-V, meanwhile, the voltage obtained by sampling the constant current sampling resistor (R2) is fed back to the reverse input end of the operational amplifier through the third resistor (R3), the non-inverting input end of the operational amplifier is connected to the output of the DAC module, the output of the operational amplifier drives the constant current adjusting tube (Q1) through the fourth resistor (R4), the fifth resistor (R5) is connected between the output voltage of the DAC module and the non-inverting input end of the operational amplifier, and the second capacitor (C3) is connected between the reverse input end and the output end of the operational amplifier.
The counting maximum value of the incremental encoder read by the singlechip module can be set through a serial port, and the limiting current information is stored in the information storage module, so that the adjustment of limiting current is realized.
The singlechip module receives P-I curve data of the output power value of the semiconductor laser and the current value of the photodiode through the serial port, transmits a conversion coefficient to the information storage module after fitting operation of the singlechip, reads the current of the semiconductor laser through the ADC module, calculates the output power value through the coefficient obtained by calculation and displays the power value in the display module.
The singlechip model used by the singlechip module is STM32F103.
The information storage module is an EEPROM simulated by a Flash memory of STM 32103F.
Drawings
The invention is described in further detail below with reference to the attached drawings and to specific examples:
fig. 1 is a block diagram of the overall structure of a constant current driving system of a semiconductor laser according to an embodiment of the present invention.
Detailed Description
The technical scheme of the invention is further described below by the specific embodiments with reference to the accompanying drawings.
Fig. 1 is a block diagram of the overall structure of a constant current driving system of a semiconductor laser according to an embodiment of the present invention.
The device comprises a line filter, an AC/DC and DC/DC module, a singlechip module, an incremental encoder driving module, an ADC module, a DAC module, a constant current driving module, a liquid crystal display module, an information storage module and a power detection module, wherein the power detection module is a transimpedance amplifier, converts a current value generated by a photodiode into a voltage value, and converts the voltage value into a laser power value through the ADC module. The output power value of the semiconductor laser and the current value corresponding to the photodiode are input through a serial port of the singlechip module, the singlechip operation stores the coefficient relation into the storage module, the laser output power value can be displayed, the incremental encoder generates A, B two-phase high-low edge pulse signals through rotation, the forward and reverse rotation of the incremental encoder is judged by comparing the front and back sequence of the A, B two-phase signal change, and the timer module of the STM32F103 singlechip is set to count the pulse addition and subtraction generated by the rotary incremental encoder in the encoder mode. The singlechip module takes the count value as the set value of the DAC output voltage, and thus the output voltage value of the DAC is set by adjusting the incremental encoder. In addition, the encoder mode of the STM32F103 singlechip counter can set the maximum count value, so that the maximum voltage output of the DAC can be effectively limited, and the current value of the set semiconductor Laser (LD) is further limited. The output voltage value of the DAC is set to the non-inverting input end of the operational amplifier (U1), the output of the operational amplifier U1 is fed back to the inverting input end of the operational amplifier (U1) through the constant current sampling resistor (R2), and the current value calculation of the current flowing through the semiconductor Laser (LD) is divided by the resistance value of the constant current sampling resistor R2 because the U1 operational amplifier is in a closed-loop negative feedback control state. As a constant current driving current source of a semiconductor Laser (LD), the output of the current source is required to be stable, and a filter capacitor with small capacity, namely a second capacitor (C2), is connected to the reverse input end and the output end of an operational amplifier (U1) to limit high-frequency gain and ensure the stability of closed-loop control current.
The slow start and short circuit protection circuit in the constant current driving module is characterized in that GND and-V levels are quickly established at the moment of system power-on, the connection node ENABLE is at the GND level, the second MOS tube (Q3) is in an on state, so that the resistances connected across the two ends of the semiconductor Laser (LD) are very small, the semiconductor Laser (LD) can be considered to be short-circuit-protected, the first MOS tube (Q2) is also in an on state, the voltage value output by the DAC is pulled to the-V level at the moment, and the current value of the semiconductor laser is set to be 0. When the first capacitor (C2) is slowly charged, the gate voltage of the second MOS tube (Q3) is reduced, the conducting channel of the second MOS tube (Q3) is gradually closed, the short-circuit function of the semiconductor Laser (LD) is lost, meanwhile, the conducting channel of the first MOS tube (Q2) is gradually closed, and the voltage of the DAC output setting (LD) current is gradually increased. The slow start and short circuit protection synchronously work simultaneously, and a time constant is established by matching the value of the first resistor (R1) and the value of the first capacitor (C2), so that the surge and the electrostatic hazard caused by the constant current source driving can be avoided to the greatest extent.
The present invention is not limited to the above-mentioned embodiments, and any changes or substitutions that can be easily understood by those skilled in the art within the scope of the present invention are intended to be included in the scope of the present invention. Therefore, the protection scope of the present invention should be subject to the protection scope of the claims.

Claims (4)

1. A semiconductor laser constant current driving system comprises a line filter, an AC/DC and DC/DC module, a singlechip module, an incremental encoder driving module, an ADC module, a DAC module, a constant current driving module, a liquid crystal display module, an information storage module and a power detection module,
the input ends of the AC/DC and DC/DC modules are connected with a line filter, and the output ends of the AC/DC and DC/DC modules output + V, GND and-V;
the incremental encoder driving module is connected with the singlechip module, and the singlechip counts the pulse times generated by the incremental encoder;
the DAC module is respectively connected with the singlechip module and the constant current driving module, the singlechip sets the pulse count value of the incremental encoder to the DAC module, and the DAC module outputs corresponding voltage to the constant current driving module to control the LD current;
the ADC module is connected with the constant current driving module, the power detection module and the singlechip module,
the power detection module detects a photodiode current value inside the semiconductor laser,
the ADC module collects the current value of the semiconductor laser and the current value of the photodiode and transmits the current value to the singlechip module;
the singlechip module is connected with the information storage module and the liquid crystal display module,
the singlechip module receives the P-I curve data of the output power value of the semiconductor laser and the current value of the photodiode through the serial port, the singlechip module transfers the conversion coefficient to the information storage module after fitting operation,
the singlechip module reads the current of the semiconductor laser through the ADC module, calculates the output power value through the coefficient obtained by calculation and displays the power value of the semiconductor laser in the display module,
the constant current driving module is respectively connected with the DAC module and the ADC module and comprises an LD slow start and LD short circuit protection circuit with synchronous realization,
one end of the first resistor (R1) and one end of the first capacitor (C2), the cathode of the diode (D2), the grid electrode of the first MOS tube (Q2) and the grid electrode of the second MOS tube (Q3) are connected with an ENABLE connection node,
the drain electrode of the first MOS tube (Q2) is connected with the equidirectional input end of the operational amplifier,
the anode of the diode (D2), the source electrode of the first MOS tube (Q2) and the other end of the first resistor (R1) are connected with-V,
the other end of the first capacitor (C2) is grounded; the drain electrode of the second MOS tube (Q3) is connected with the anode of the semiconductor Laser (LD), the source electrode of the second MOS tube (Q3), the drain electrode of the constant current adjusting tube (Q1) and the cathode of the semiconductor Laser (LD) are connected together,
one end of a constant current sampling resistor (R2) is connected with the source electrode of a constant current adjusting tube (Q1), the other end of the constant current sampling resistor is connected with-V, meanwhile, the voltage obtained by sampling the constant current sampling resistor (R2) is fed back to the reverse input end of the operational amplifier through a third resistor (R3), the in-phase input end of the operational amplifier is connected to the output of the DAC module, the output of the operational amplifier drives the constant current adjusting tube (Q1) through a fourth resistor (R4), a fifth resistor (R5) is connected between the output voltage of the DAC module and the in-phase input end of the operational amplifier, and a second capacitor (C3) is connected between the reverse input end and the output end of the operational amplifier.
2. The constant current driving system of a semiconductor laser device according to claim 1, wherein the maximum count value of the incremental encoder read by the singlechip module is set through a serial port and the limiting current information is stored in the information storage module, so that the adjustment of the limiting current is realized.
3. The semiconductor laser constant current driving system according to claim 1, wherein: the singlechip model used by the singlechip module is STM32F103.
4. The semiconductor laser constant current driving system according to claim 1, wherein: the information storage module is an EEPROM which is simulated by a Flash memory of STM 32103F.
CN201610879882.2A 2016-10-09 2016-10-09 Semiconductor laser constant current driving system Active CN106451065B (en)

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CN109417272B (en) * 2018-09-20 2020-10-09 索尔思光电(成都)有限公司 Impedance matching circuit for light emitter and methods of making and using the same

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001053378A (en) * 1999-08-06 2001-02-23 Fujikura Ltd Drive circuit for semiconductor laser module
JP2003179473A (en) * 2001-12-13 2003-06-27 Nippon Telegr & Teleph Corp <Ntt> Optical element drive circuit
JP2008263071A (en) * 2007-04-12 2008-10-30 Seiko Epson Corp Drive current control circuit and light emitting element driving circuit
JP2010123715A (en) * 2008-11-19 2010-06-03 Ricoh Co Ltd Semiconductor laser driving device, and image forming apparatus with the semiconductor laser driving device
CN203338172U (en) * 2013-07-25 2013-12-11 长春工业大学 Semiconductor laser constant current drive and temperature control system
CN203871651U (en) * 2014-06-03 2014-10-08 武汉洛芙科技股份有限公司 Laser device constant current source drive circuit
CN104345750A (en) * 2013-07-25 2015-02-11 长春工业大学 Semiconductor laser constant current driving and temperature control system

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001053378A (en) * 1999-08-06 2001-02-23 Fujikura Ltd Drive circuit for semiconductor laser module
JP2003179473A (en) * 2001-12-13 2003-06-27 Nippon Telegr & Teleph Corp <Ntt> Optical element drive circuit
JP2008263071A (en) * 2007-04-12 2008-10-30 Seiko Epson Corp Drive current control circuit and light emitting element driving circuit
JP2010123715A (en) * 2008-11-19 2010-06-03 Ricoh Co Ltd Semiconductor laser driving device, and image forming apparatus with the semiconductor laser driving device
CN203338172U (en) * 2013-07-25 2013-12-11 长春工业大学 Semiconductor laser constant current drive and temperature control system
CN104345750A (en) * 2013-07-25 2015-02-11 长春工业大学 Semiconductor laser constant current driving and temperature control system
CN203871651U (en) * 2014-06-03 2014-10-08 武汉洛芙科技股份有限公司 Laser device constant current source drive circuit

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