CN106450010B - The preparation method of QLED device luminescent layer - Google Patents
The preparation method of QLED device luminescent layer Download PDFInfo
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- CN106450010B CN106450010B CN201610685196.1A CN201610685196A CN106450010B CN 106450010 B CN106450010 B CN 106450010B CN 201610685196 A CN201610685196 A CN 201610685196A CN 106450010 B CN106450010 B CN 106450010B
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
- H10K50/115—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising active inorganic nanostructures, e.g. luminescent quantum dots
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/40—Thermal treatment, e.g. annealing in the presence of a solvent vapour
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Abstract
The present invention provides a kind of preparation methods of QLED device luminescent layer, comprising: step A forms film on the liquid level of orthogonal solvents with oil-soluble quantum dot solution；The film is transferred on the surface of the substrate by step B；Film after transfer is carried out high-temperature process, to obtain the QLED device luminescent layer by step C.The advantages of preparation method provided by the invention has simple process, and large-area displays may be implemented.
Description
Technical field
The invention belongs to field of electronic devices, and in particular to a kind of preparation method of QLED device luminescent layer.
Background technique
Quantum dot (Quantum Dot, QD) namely nanocrystal, is a kind of nano material of quasi-zero dimension.Quantum dot three
The size of a dimension is all between 1-100nm, and movement of the internal electron in all directions is all limited to, so quantum confinement
Effect is particularly significant, and since electrons and holes are by quantum confinement, continuous band structure becomes the discrete energy with molecular characterization
Level structure.Various sizes of quantum dot, electrons and holes are different by the degree of quantum confinement, the discrete energy levels knot of molecular characterization
Structure is also different because of the size of quantum dot difference.Therefore, after being excited by extraneous energy, various sizes of quantum dot will be issued
The fluorescence of different wave length, that is, the light of various colors.In addition, due to the wavelength only energy with quantum dot of quantum dot stimulated emission
Level structure is related, and therefore, the wavelength halfwidth of transmitting is very narrow, and luminance purity is very high.
Light emitting diode with quantum dots (QLED) uses quantum dot as luminescent material, wide, the high and low function of excitation purity with colour gamut
Consumption, low cost, stability are good, are known as the lighting display technology of new generation after OLED.
The quantum dot light emitting layer for preparing QLED device at present is formed a film using solwution method.Solwution method film forming mainly includes two
Kind: one is spin-coating method is used, second is inkjet printing.Although spin-coating method preparation process is simple, big face cannot achieve
Product homogeneous film formation.Although full-color display may be implemented in inkjet printing, but restricted by quantum dot ink, and this method develops always
Slowly.
Summary of the invention
In view of the above-mentioned problems existing in the prior art, the present invention provides a kind of method for preparing QLED device luminescent layer.It should
The advantages of method has simple process, and large-area displays may be implemented.
The preparation method of QLED device luminescent layer provided by the invention includes:
Step A forms film on the liquid level of orthogonal solvents with oil-soluble quantum dot solution；
The film is transferred on the surface of the substrate by step B；
Film after transfer is carried out high-temperature process, to obtain the QLED device luminescent layer by step C.
In one embodiment, by the way that substrate to be inserted into orthogonal solvents, then along clockwise direction or counterclockwise
Direction lifts from the orthogonal solvents, to the film is transferred on the surface of the substrate.
In another embodiment, by the way that substrate is impregnated in the orthogonal solvents before step A, preferably make institute
The liquid level keeping parallelism of substrate Yu the orthogonal solvents is stated, and the liquid level of the orthogonal solvents is reduced into (example after step
Such as pass through liquid outlet) to the surface of the substrate hereinafter, to be transferred to the film on the surface of the substrate.
In yet another embodiment, by the way that substrate is impregnated in the orthogonal solvents before step A, preferably make institute
State the liquid level keeping parallelism of substrate Yu the orthogonal solvents, and after step by substrate improve (such as pass through lifting fill
Set) to the orthogonal solvents liquid level on, to the film is transferred on the surface of the substrate.
Preparation method according to the present invention, it is organic molten that the oil-soluble quantum dot solution by quanta point material is dissolved in oil-soluble
Agent is prepared.For example, quanta point material is added in the bottle for filling oil-soluble organic solvent, bottle is placed on warm table
Upper stirring forms homogeneous solution, the as described oil-soluble quantum dot solution.
According to one embodiment, the quanta point material is made of shine shell, shell structurre and organic ligand.
According to one embodiment, the density of the orthogonal solvents is greater than the density of the oil-soluble organic solvent.According to
One embodiment, the orthogonal solvents are different from the polarity of the oil-soluble organic solvent, and the two is in same container
Lower leaf can be gone up.
Preferably, the oil-soluble organic solvent is toluene, chlorobenzene or chloroform.
Preferably, the orthogonal solvents are selected from least one of water, ethyl alcohol or methanol.
The present invention can control the thickness of film by the concentration and infusion volume of quantum dot solution.
According to one embodiment, the temperature of the high-temperature process is 50-200 DEG C, preferably 80-150 DEG C.At high temperature
Reason can make film stronger at adhesion.
Preparation method through the invention not only may be implemented solwution method and prepare large area quantum dot light emitting layer on substrate
Film, and form a film uniformly, film thickness is adjustable, and preparation process is simple.
Detailed description of the invention
Fig. 1 is according to embodiments of the present invention 1 schematic diagram.
Fig. 2 is according to embodiments of the present invention 2 schematic diagram.
Fig. 3 is according to embodiments of the present invention 3 schematic diagram.
Specific embodiment
Below in conjunction with drawings and examples, the present invention is described in detail, but the present invention is not by the limit of following embodiments
System.
Embodiment 1
As shown in Figure 1, placing a substrate in container side wall, contained in container into suitable chloroform.By quantum dot solution (with first
Alcohol is solvent) it is added dropwise in the container, uniform film is formed on chloroform liquid level.Then, inclination lifting glass substrate.Substrate shape
At film.In 100 DEG C or so lower progress high-temperature bakings, cured film, with the adhesiveness of enhanced film.QLED device is obtained to shine
Layer.
Embodiment 2
As shown in Fig. 2, substrate is immersed in container bottom, wherein the container bottom is provided with liquid outlet, contained in container
There is suitable chloroform.Quantum dot solution (using ethyl alcohol as solvent) is added dropwise in the container, is formed on toluene liquid level uniformly thin
Film.Then, by the solution slow release in container, as liquid level moves down, film finally is formed in substrate surface.On 110 DEG C of left sides
Bottom right carries out high-temperature baking, cured film, with the adhesiveness of enhanced film.Obtain QLED device luminescent layer.
Embodiment 3
As shown in figure 3, substrate is immersed in container, wherein the container is provided with hoistable platform moving up and down.
The substrate horizontal is on hoistable platform moving up and down.Suitable chloroform is filled in container.By quantum dot solution (with ethyl alcohol
For solvent) it is added dropwise in the container, uniform film is formed on toluene liquid level.By slowly rising lifting platform, until substrate
Expose liquid level, to form uniform film in substrate surface.In 110 DEG C or so lower progress high-temperature bakings, cured film, with enhancing
The adhesiveness of film.Obtain QLED device luminescent layer.
Although hereinbefore having been made with reference to some embodiments, invention has been described, Ben Fafan is not being departed from
In the case where enclosing, various improvement can be carried out to it, and component therein can be replaced with equivalent.Especially, as long as not
There are structural conflict, the various features in presently disclosed each embodiment can be combined with each other by any way
The case where using, not combining in the present specification to these carries out the description of exhaustive merely for the sake of omission length and saves money
The considerations of source.Therefore, the invention is not limited to specific embodiments disclosed herein, but fall into the institute of the scope of the claims
There is technical solution.
Claims (7)
1. a kind of preparation method of QLED device luminescent layer, comprising:
Step A forms film on the liquid level of orthogonal solvents with oil-soluble quantum dot solution；
The film is transferred on the surface of substrate by step B；
Film after transfer is carried out high-temperature process by step C, so that the QLED device luminescent layer is obtained,
Wherein by the way that substrate is impregnated in the orthogonal solvents before step A, and after step will be described orthogonal molten
The liquid level of agent is reduced to the surface of the substrate hereinafter, to the film is transferred on the surface of the substrate, Huo Zhetong
It crosses and substrate is impregnated in the orthogonal solvents before step A, and after step improve substrate to described orthogonal molten
On the liquid level of agent, to the film is transferred on the surface of the substrate.
2. the method according to claim 1, wherein the oil-soluble quantum dot solution is by by quanta point material
Oil-soluble organic solvent is dissolved in be prepared.
3. according to the method described in claim 2, it is characterized in that, the quanta point material is by luminous shell, shell structurre and has
Machine ligand is constituted.
4. the method according to claim 1, wherein the oil-soluble organic solvent is toluene, chlorobenzene or chloroform.
5. the method according to claim 1, wherein the orthogonal solvents in water, ethyl alcohol and methanol extremely
Few one kind.
6. the method according to claim 1, wherein the temperature of the high-temperature process is 50-200 DEG C.
7. the method according to claim 1, wherein the density of the oil-dissolving solvent is less than the orthogonal solvents
Density.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103585935A (en) * | 2013-11-25 | 2014-02-19 | 中国航空工业集团公司北京航空材料研究院 | Quickly assembling method for colloidal crystal with controllable layer number |
| CN105304829A (en) * | 2015-11-18 | 2016-02-03 | Tcl集团股份有限公司 | Double-sided emission quantum dot light emitting diode and manufacturing method thereof |
| CN105694893A (en) * | 2016-04-12 | 2016-06-22 | 北京化工大学 | Langmiur-Blodgett composite lighting film of cadmium telluride quantum dots and layered double hydroxide and manufacturing method thereof |
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| KR101274068B1 (en) * | 2010-05-25 | 2013-06-12 | 서울대학교산학협력단 | Quantum Dot Light Emitting Diode Device and Display Using the Same |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103585935A (en) * | 2013-11-25 | 2014-02-19 | 中国航空工业集团公司北京航空材料研究院 | Quickly assembling method for colloidal crystal with controllable layer number |
| CN105304829A (en) * | 2015-11-18 | 2016-02-03 | Tcl集团股份有限公司 | Double-sided emission quantum dot light emitting diode and manufacturing method thereof |
| CN105694893A (en) * | 2016-04-12 | 2016-06-22 | 北京化工大学 | Langmiur-Blodgett composite lighting film of cadmium telluride quantum dots and layered double hydroxide and manufacturing method thereof |
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