CN106449887B - A kind of light reflecting membrane material for photovoltaic module - Google Patents
A kind of light reflecting membrane material for photovoltaic module Download PDFInfo
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- CN106449887B CN106449887B CN201611037807.8A CN201611037807A CN106449887B CN 106449887 B CN106449887 B CN 106449887B CN 201611037807 A CN201611037807 A CN 201611037807A CN 106449887 B CN106449887 B CN 106449887B
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- 239000000463 material Substances 0.000 title claims abstract description 49
- 239000012528 membrane Substances 0.000 title claims abstract description 28
- 238000006243 chemical reaction Methods 0.000 claims abstract description 48
- 238000003756 stirring Methods 0.000 claims abstract description 18
- 239000002904 solvent Substances 0.000 claims abstract description 17
- 239000003054 catalyst Substances 0.000 claims abstract description 16
- 239000007822 coupling agent Substances 0.000 claims abstract description 16
- 239000002270 dispersing agent Substances 0.000 claims abstract description 16
- 239000003999 initiator Substances 0.000 claims abstract description 16
- 229910052751 metal Inorganic materials 0.000 claims abstract description 16
- 239000002184 metal Substances 0.000 claims abstract description 16
- 238000012856 packing Methods 0.000 claims abstract description 16
- 150000003608 titanium Chemical class 0.000 claims abstract description 16
- 238000001816 cooling Methods 0.000 claims abstract description 12
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 claims abstract description 12
- 229920000139 polyethylene terephthalate Polymers 0.000 claims abstract description 12
- 239000005020 polyethylene terephthalate Substances 0.000 claims abstract description 12
- 230000035800 maturation Effects 0.000 claims abstract description 11
- -1 polyethylene terephthalate Polymers 0.000 claims abstract description 11
- 229920001709 polysilazane Polymers 0.000 claims abstract description 11
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 claims abstract description 11
- 238000005273 aeration Methods 0.000 claims abstract description 10
- 238000002360 preparation method Methods 0.000 claims abstract description 6
- 238000007789 sealing Methods 0.000 claims abstract description 6
- 238000010792 warming Methods 0.000 claims abstract description 6
- 239000007789 gas Substances 0.000 claims description 30
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 20
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 10
- 229910052757 nitrogen Inorganic materials 0.000 claims description 10
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 claims description 9
- RIOQSEWOXXDEQQ-UHFFFAOYSA-N triphenylphosphine Chemical compound C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 RIOQSEWOXXDEQQ-UHFFFAOYSA-N 0.000 claims description 8
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 claims description 6
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 claims description 6
- VXUYXOFXAQZZMF-UHFFFAOYSA-N titanium(IV) isopropoxide Chemical compound CC(C)O[Ti](OC(C)C)(OC(C)C)OC(C)C VXUYXOFXAQZZMF-UHFFFAOYSA-N 0.000 claims description 6
- XMNIXWIUMCBBBL-UHFFFAOYSA-N 2-(2-phenylpropan-2-ylperoxy)propan-2-ylbenzene Chemical compound C=1C=CC=CC=1C(C)(C)OOC(C)(C)C1=CC=CC=C1 XMNIXWIUMCBBBL-UHFFFAOYSA-N 0.000 claims description 5
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 5
- 229910052786 argon Inorganic materials 0.000 claims description 5
- 238000001035 drying Methods 0.000 claims description 5
- 239000010408 film Substances 0.000 claims description 5
- 239000001307 helium Substances 0.000 claims description 5
- 229910052734 helium Inorganic materials 0.000 claims description 5
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 5
- 239000011261 inert gas Substances 0.000 claims description 5
- 229920000036 polyvinylpyrrolidone Polymers 0.000 claims description 5
- 239000001267 polyvinylpyrrolidone Substances 0.000 claims description 5
- 235000013855 polyvinylpyrrolidone Nutrition 0.000 claims description 5
- 229910000077 silane Inorganic materials 0.000 claims description 5
- YHWCPXVTRSHPNY-UHFFFAOYSA-N butan-1-olate;titanium(4+) Chemical compound [Ti+4].CCCC[O-].CCCC[O-].CCCC[O-].CCCC[O-] YHWCPXVTRSHPNY-UHFFFAOYSA-N 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 claims description 4
- FZHAPNGMFPVSLP-UHFFFAOYSA-N silanamine Chemical compound [SiH3]N FZHAPNGMFPVSLP-UHFFFAOYSA-N 0.000 claims description 4
- MCEBKLYUUDGVMD-UHFFFAOYSA-N [SiH3]S(=O)=O Chemical compound [SiH3]S(=O)=O MCEBKLYUUDGVMD-UHFFFAOYSA-N 0.000 claims description 3
- XYIBRDXRRQCHLP-UHFFFAOYSA-N ethyl acetoacetate Chemical compound CCOC(=O)CC(C)=O XYIBRDXRRQCHLP-UHFFFAOYSA-N 0.000 claims description 3
- 229910000073 phosphorus hydride Inorganic materials 0.000 claims description 3
- 239000010409 thin film Substances 0.000 claims description 2
- 229910003978 SiClx Inorganic materials 0.000 claims 1
- 230000003287 optical effect Effects 0.000 claims 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 1
- 239000000377 silicon dioxide Substances 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 abstract description 6
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 239000007788 liquid Substances 0.000 abstract 1
- 238000003466 welding Methods 0.000 description 12
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 5
- 229910052709 silver Inorganic materials 0.000 description 5
- 239000004332 silver Substances 0.000 description 5
- 239000005543 nano-size silicon particle Substances 0.000 description 4
- 238000006902 nitrogenation reaction Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical group [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 238000003490 calendering Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a kind of light reflecting membrane material for photovoltaic module, its preparation process are as follows：Step 1, polyethylene terephthalate and polysilazane are added into low molecule solvent, stirs 2 4h；Step 2, coupling agent, initiator and catalyst are added to solvent, the 5h of sealing protection gas compressive reaction 2, obtains reaction solution；Step 3, metal packing, organic titanium salt and dispersant is added in reaction solution after stirring, carries out high-temperature methane returning aeration and react 3 6h；Step 4, after natural cooling, by the 8h of reaction solution low temperature maturation 5；Step 5, Cabbeen is added into reaction solution, carries out low temperature stirring, be aerated scattered reaction；Step 6, forerunner's coating liquid is lifted into film on base material, then high pressure-temperature dries 3 6h；Step 7, boron chloride base material being placed under gas shield is reacted through warming high-pressure, and light reflecting membrane material is can obtain after natural cooling.Material therefor of the present invention is the material widely applied in general components, and manufacturing cost is relatively low, hidden danger will not be brought to the long-time stability of component, while can significantly improve the power output of solar module.
Description
Technical field
The invention belongs to technical field of solar, and in particular to a kind of light reflecting membrane material for photovoltaic module.
Background technology
In order to reach the purpose of electric current output precision caused by photovoltaic cell, it is necessary in cell piece surface soldered difference number
The main grid on the welding of amount, welding and cell piece surface forms good electrical contact.Electric current passes through electricity caused by photovoltaic cell
The grid line of pool surface flows to welding, and component external is flowed to so as to dynamic load then along welding.
In actual applications, in order to reduce the consumption of silver paste, the main grid on solar battery sheet surface can be discontinuous
Point-like main grid, this main grid actually increases the light-receiving area of cell piece, but when component is prepared, and welding can be by
The area covering cell piece of continuous main grid, its area covered can't change because of point-like main grid.So point-like main grid
The power of cell piece can be over-evaluated.
Due to the presence of welding, the portion of incident light of its area covered is not utilized by cell piece produces electric energy, this
Area accounts for the 2% to 4% of cell piece area, equivalent to the component power output that have lost 2% to 4%.
German Schlenk companies have developed a kind of synergy welding, and its primary structure is using copper core as conductive base, under it
Layer of soldering material is rolled on surface, is rolled one layer of reflective silver layer in its upper surface, is pressed simultaneously when upper surface silver layer is rolled
Make required zigzag texture.This welding can actually improve the power output of component in actual use, but due to
Silver belongs to noble metal, and the presence for rolling silver layer greatly improves the cost of whole welding；Further, since can only one side calendering weldering
Material is connect, causes it to weld monolithic battery piece, must be connected on adjacent other cell piece using other techniques
Connect, application cost is higher, causes it can not be widely applied in actual production.
Chinese patent (publication number：CN201210588061.5 a kind of solution that reflective tape is pasted on welding surface) is provided
Scheme, the area that not only make use of welding to block, the power output of component is added, and cost is cheaper than synergy welding.But
It is to suppress directly in PET base material that zigzag texturing process is complex, and product fine rate is not with pressure sintering in actual production
Height, constrain the further reduction of reflective tape cost.
The content of the invention
It is an object of the invention to provide a kind of light reflecting membrane material for photovoltaic module, material therefor of the present invention is normal
The material widely applied in rule component, manufacturing cost is relatively low, will not bring hidden danger to the long-time stability of component, while can
To significantly improve the power output of solar module.
A kind of light reflecting membrane material for photovoltaic module, its preparation process are as follows：
Step 1, polyethylene terephthalate and polysilazane are added into low molecule solvent, stirs 2-4h；
Step 2, coupling agent, initiator and catalyst are added to the solution obtained to step 1, sealing protection gas compressive reaction
2-5h, obtain reaction solution；
Step 3, metal packing, organic titanium salt and dispersant is added in reaction solution after stirring, carries out high-temperature methane
Returning aeration reacts 3-6h；
Step 4, after natural cooling, by reaction solution low temperature maturation 5-8h；
Step 5, Cabbeen is added into reaction solution, carries out low temperature stirring, be aerated scattered reaction；
Step 6, the reacted reaction solution of step 5 is lifted into film on base material, then high pressure-temperature drying 3-6h；
Step 7, boron chloride base material being placed under gas shield reacts through warming high-pressure, can be obtained after natural cooling
To light reflecting membrane material.
The quality formula of the light reflecting membrane material is as follows：
Polyethylene terephthalate 15-20 parts, polysilazane 9-11 parts, low molecule solvent 30-40 parts, coupling agent 3-
4 parts, initiator 2-4 parts, catalyst 1-2 parts, metal packing 3-5 parts, organic titanium salt 10-15 parts, dispersant 2-5 parts, Cabbeen 11-
13 parts, boron chloride 3-7 parts.
The low molecule solvent is using one kind in ethyl acetate, ether, ethyl acetoacetate.
The coupling agent uses silane coupler, using amino silane or hydrosulphonyl silane.
The initiator uses cumyl peroxide.
The catalyst uses triphenylphosphine or trialkyl phosphine.
The metal packing uses nano silicon.
The organic titanium salt uses tetrabutyl titanate or tetraisopropyl titanate.
The dispersant uses polyvinylpyrrolidone.
Protection gas in the step 2 uses argon gas or helium, and the pressure of the compressive reaction is 1.1-1.6MPa.
High-temperature temperature in the step 3 is 110-130 DEG C, and the backflow flow velocity is 10-15mL/min.
Low temperature maturation temperature is 0-5 DEG C in the step 4.
Low temperature whipping temp in the step 5 is 5-10 DEG C, and the aerating gas is nitrogen, and aeration flow velocity is 5-
10mL/min。
High temperature in the step 6 is 150-180 DEG C, and the high pressure is 0.7-0.9MPa.
Heating in the step 7 is 400-600 DEG C, high pressure 1-3.2MPa, and protection gas is nitrogen or inert gas.
Compared with prior art, the invention has the advantages that：
1st, material therefor of the present invention is the material widely applied in general components, and manufacturing cost is relatively low, will not be given
The long-time stability of component bring hidden danger, while can significantly improve the power output of solar module.
2nd, the power output of the photovoltaic module of photovoltaic module light reflecting membrane of the present invention can increase by 1.5% to 3%, and this is reflective thin
Film effectively reduces the manufacturing cost of photovoltaic module unit power.
3rd, the present invention rationally fully maximally utilizes light source, so as to increase solar illuminating intensity and area, reduces by outer
The conversion efficiency loss that portion's light source is limited and brought.
Embodiment
The present invention is described further with reference to embodiment：
Embodiment 1
A kind of light reflecting membrane material for photovoltaic module, its preparation process are as follows：
Step 1, polyethylene terephthalate and polysilazane are added into low molecule solvent, stirs 2h；
Step 2, coupling agent, initiator and catalyst are added to the solution obtained to step 1, sealing protection gas compressive reaction
2h, obtain reaction solution；
Step 3, metal packing, organic titanium salt and dispersant is added in reaction solution after stirring, carries out high-temperature methane
Returning aeration reacts 3h；
Step 4, after natural cooling, by reaction solution low temperature maturation 5h；
Step 5, Cabbeen is added into reaction solution, carries out low temperature stirring, be aerated scattered reaction；
Step 6, the reacted reaction solution of step 5 is lifted into film on base material, then high pressure-temperature drying 3h；
Step 7, boron chloride base material being placed under gas shield reacts through warming high-pressure, can be obtained after natural cooling
To light reflecting membrane material.
The quality formula of the light reflecting membrane material is as follows：
15 parts of polyethylene terephthalate, 9 parts of polysilazane, 30 parts of low molecule solvent, 3 parts of coupling agent, initiator 2
Part, 1 part of catalyst, 3 parts of metal packing, 10 parts of organic titanium salt, 2 parts of dispersant, 11 parts of Cabbeen, 3 parts of boron chloride.
The low molecule solvent uses ethyl acetate.
The coupling agent uses silane coupler, using amino silane.
The initiator uses cumyl peroxide.
The catalyst uses triphenylphosphine.
The metal packing uses nano silicon.
The organic titanium salt uses tetrabutyl titanate.
The dispersant uses polyvinylpyrrolidone.
Protection gas in the step 2 uses argon gas or helium, and the pressure of the compressive reaction is 1.1MPa.
High-temperature temperature in the step 3 is 110 DEG C, and the backflow flow velocity is 10mL/min.
Low temperature maturation temperature is 0 DEG C in the step 4.
Low temperature whipping temp in the step 5 is 5 DEG C, and the aerating gas is nitrogen, and aeration flow velocity is 5mL/min.
High temperature in the step 6 is 150 DEG C, and the high pressure is 0.7MPa.
High temperature in the step 7 is 400 DEG C, high pressure 1MPa, and protection gas is nitrogen or inert gas.
Embodiment 2
A kind of light reflecting membrane material for photovoltaic module, its preparation process are as follows：
Step 1, polyethylene terephthalate and polysilazane are added into low molecule solvent, stirs 4h；
Step 2, coupling agent, initiator and catalyst are added to the solution obtained to step 1, sealing protection gas compressive reaction
5h, obtain reaction solution；
Step 3, metal packing, organic titanium salt and dispersant is added in reaction solution after stirring, carries out high-temperature methane
Returning aeration reacts 6h；
Step 4, after natural cooling, by reaction solution low temperature maturation 8h；
Step 5, Cabbeen is added into reaction solution, carries out low temperature stirring, be aerated scattered reaction；
Step 6, the reacted reaction solution of step 5 is lifted into film on base material, then high pressure-temperature drying 6h；
Step 7, boron chloride base material being placed under gas shield reacts through warming high-pressure, can be obtained after natural cooling
To light reflecting membrane material.
The quality formula of the light reflecting membrane material is as follows：
20 parts of polyethylene terephthalate, 11 parts of polysilazane, 40 parts of low molecule solvent, 4 parts of coupling agent, initiator
4 parts, 2 parts of catalyst, 5 parts of metal packing, 15 parts of organic titanium salt, 5 parts of dispersant, 13 parts of Cabbeen, 7 parts of boron chloride.
The low molecule solvent uses ether.
The coupling agent uses silane coupler, using hydrosulphonyl silane.
The initiator uses cumyl peroxide.
The catalyst uses trialkyl phosphine.
The metal packing uses nano silicon.
The organic titanium salt uses tetraisopropyl titanate.
The dispersant uses polyvinylpyrrolidone.
Protection gas in the step 2 uses argon gas or helium, and the pressure of the compressive reaction is 1.6MPa.
High-temperature temperature in the step 3 is 130 DEG C, and the backflow flow velocity is 15mL/min.
Low temperature maturation temperature is 5 DEG C in the step 4.
Low temperature whipping temp in the step 5 is 10 DEG C, and the aerating gas is nitrogen, and aeration flow velocity is 10mL/
min。
High temperature in the step 6 is 180 DEG C, and the high pressure is 0.9MPa.
Heating in the step 7 is 600 DEG C, high pressure 3.2MPa, and protection gas is nitrogen or inert gas.
Embodiment 3
A kind of light reflecting membrane material for photovoltaic module, its preparation process are as follows：
Step 1, polyethylene terephthalate and polysilazane are added into low molecule solvent, stirs 3h；
Step 2, coupling agent, initiator and catalyst are added to the solution obtained to step 1, sealing protection gas compressive reaction
4h, obtain reaction solution；
Step 3, metal packing, organic titanium salt and dispersant is added in reaction solution after stirring, carries out high-temperature methane
Returning aeration reacts 4h；
Step 4, after natural cooling, by reaction solution low temperature maturation 6h；
Step 5, Cabbeen is added into reaction solution, carries out low temperature stirring, be aerated scattered reaction；
Step 6, the reacted reaction solution of step 5 is lifted into film on base material, then high pressure-temperature drying 5h；
Step 7, boron chloride base material being placed under gas shield reacts through warming high-pressure, can be obtained after natural cooling
To light reflecting membrane material.
The quality formula of the light reflecting membrane material is as follows：
18 parts of polyethylene terephthalate, 10 parts of polysilazane, 35 parts of low molecule solvent, 3 parts of coupling agent, initiator
3 parts, 2 parts of catalyst, 4 parts of metal packing, 13 parts of organic titanium salt, 3 parts of dispersant, 12 parts of Cabbeen, 4 parts of boron chloride.
The low molecule solvent uses ethyl acetoacetate.
The coupling agent uses silane coupler, using amino silane.
The initiator uses cumyl peroxide.
The catalyst uses triphenylphosphine.
The metal packing uses nano silicon.
The organic titanium salt uses tetrabutyl titanate.
The dispersant uses polyvinylpyrrolidone.
Protection gas in the step 2 uses argon gas or helium, and the pressure of the compressive reaction is 1.3MPa.
High-temperature temperature in the step 3 is 120 DEG C, and the backflow flow velocity is 13mL/min.
Low temperature maturation temperature is 3 DEG C in the step 4.
Low temperature whipping temp in the step 5 is 8 DEG C, and the aerating gas is nitrogen, and aeration flow velocity is 8mL/min.
High temperature in the step 6 is 170 DEG C, and the high pressure is 0.8MPa.
Heating in the step 7 is 500 DEG C, high pressure 2.2MPa, and protection gas is nitrogen or inert gas.
Embodiment 1-3 performance detection effect is as follows：
One embodiment of the invention is the foregoing is only, is not intended to limit the present invention, it is all to use equivalent substitution or equivalent transformation
The technical scheme that is obtained of mode, all fall within protection scope of the present invention.
Claims (8)
1. a kind of light reflecting membrane material for photovoltaic module, it is characterised in that its preparation process is as follows：
Step 1, polyethylene terephthalate and polysilazane are added into low molecule solvent, stirs 2-4h, it is described low
Molecular solvent is using one kind in ethyl acetate, ether, ethyl acetoacetate；
Step 2, coupling agent, initiator and catalyst is added in the solution obtained to step 1, sealing protection gas compressive reaction 2-
5h, obtain reaction solution；
Step 3, metal packing, organic titanium salt and dispersant is added in reaction solution after stirring, carries out high-temperature methane backflow
Aerated reaction 3-6h, the high-temperature temperature are 110-130 DEG C；
Step 4, after natural cooling, by reaction solution low temperature maturation 5-8h, the low temperature maturation temperature is 0-5 DEG C；
Step 5, Cabbeen is added into reaction solution, carries out low temperature stirring, be aerated scattered reaction, the low temperature whipping temp is 5-
10℃；
Step 6, the reacted reaction solution of step 5 is lifted into film on base material, then high pressure-temperature drying 3-6h, the high temperature
For 150-180 DEG C, the high pressure is 0.7-0.9MPa；
Step 7, boron chloride base material being placed under gas shield reacts through warming high-pressure, can obtain after natural cooling anti-
Optical thin film material, the heating are 400-600 DEG C, high pressure 1-3.2MPa.
2. a kind of light reflecting membrane material for photovoltaic module according to claim 1, it is characterised in that described reflective thin
The quality formula of membrane material is as follows：
Polyethylene terephthalate 15-20 parts, polysilazane 9-11 parts, low molecule solvent 30-40 parts, coupling agent 3-4 parts,
Initiator 2-4 parts, catalyst 1-2 parts, metal packing 3-5 parts, organic titanium salt 10-15 parts, dispersant 2-5 parts, Cabbeen 11-13
Part, boron chloride 3-7 parts.
A kind of 3. light reflecting membrane material for photovoltaic module according to claim 2, it is characterised in that the coupling agent
Using silane coupler, using amino silane or hydrosulphonyl silane.
A kind of 4. light reflecting membrane material for photovoltaic module according to claim 2, it is characterised in that the initiator
Using cumyl peroxide, the catalyst uses triphenylphosphine or trialkyl phosphine, and the metal packing uses nano-silica
SiClx, the organic titanium salt use tetrabutyl titanate or tetraisopropyl titanate, and the dispersant uses polyvinylpyrrolidone.
A kind of 5. light reflecting membrane material for photovoltaic module according to claim 1, it is characterised in that the step 2
In protection gas use argon gas or helium, the pressure of the compressive reaction is 1.1-1.6MPa.
A kind of 6. light reflecting membrane material for photovoltaic module according to claim 1, it is characterised in that the step 3
In backflow flow velocity be 10-15mL/min.
A kind of 7. light reflecting membrane material for photovoltaic module according to claim 1, it is characterised in that the step 5
In aerating gas be nitrogen, aeration flow velocity is 5-10mL/min.
A kind of 8. light reflecting membrane material for photovoltaic module according to claim 1, it is characterised in that the step 7
In protection gas be nitrogen or inert gas.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611037807.8A CN106449887B (en) | 2016-11-23 | 2016-11-23 | A kind of light reflecting membrane material for photovoltaic module |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611037807.8A CN106449887B (en) | 2016-11-23 | 2016-11-23 | A kind of light reflecting membrane material for photovoltaic module |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN106449887A CN106449887A (en) | 2017-02-22 |
| CN106449887B true CN106449887B (en) | 2018-01-16 |
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Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN109545879B (en) * | 2017-09-21 | 2020-11-03 | 张家港康得新光电材料有限公司 | Light reflection structure layer and photovoltaic module with same |
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| JP2004155834A (en) * | 2002-11-01 | 2004-06-03 | Clariant Internatl Ltd | Polysilazane-containing coating liquid |
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| DE102008020324A1 (en) * | 2008-04-23 | 2009-10-29 | Clariant International Limited | Polysilazane-containing coatings to increase the luminous efficacy of encapsulated solar cells |
| DE102009013904A1 (en) * | 2009-03-19 | 2010-09-23 | Clariant International Limited | Solar cells with an encapsulation layer based on polysilazane |
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| JP6317874B2 (en) * | 2012-06-26 | 2018-04-25 | 日揮触媒化成株式会社 | Method for producing substrate with antireflection film and photoelectric cell |
| CN102751344A (en) * | 2012-07-20 | 2012-10-24 | 合肥海润光伏科技有限公司 | Photovoltaic reflecting thin-film |
| US20150007877A1 (en) * | 2013-07-05 | 2015-01-08 | Gtat Corporation | Polysilazane coating for photovoltaic cells |
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