CN106449848A - 一种含有复合多光子腔的多结太阳电池 - Google Patents
一种含有复合多光子腔的多结太阳电池 Download PDFInfo
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- CN106449848A CN106449848A CN201610962842.4A CN201610962842A CN106449848A CN 106449848 A CN106449848 A CN 106449848A CN 201610962842 A CN201610962842 A CN 201610962842A CN 106449848 A CN106449848 A CN 106449848A
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- 239000002131 composite material Substances 0.000 title abstract 2
- 150000001875 compounds Chemical class 0.000 claims description 24
- 238000001579 optical reflectometry Methods 0.000 claims description 19
- 230000001105 regulatory effect Effects 0.000 claims description 18
- 239000011248 coating agent Substances 0.000 claims description 6
- 238000000576 coating method Methods 0.000 claims description 6
- 239000006117 anti-reflective coating Substances 0.000 claims description 3
- 239000000463 material Substances 0.000 abstract description 15
- 230000002269 spontaneous effect Effects 0.000 abstract description 15
- 230000005855 radiation Effects 0.000 abstract description 5
- 238000006243 chemical reaction Methods 0.000 abstract description 2
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 30
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 10
- 230000001808 coupling effect Effects 0.000 description 6
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 5
- 230000005611 electricity Effects 0.000 description 5
- 230000009466 transformation Effects 0.000 description 5
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 230000000574 ganglionic effect Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/0735—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising only AIIIBV compound semiconductors, e.g. GaAs/AlGaAs or InP/GaInAs solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
- H01L31/0547—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means comprising light concentrating means of the reflecting type, e.g. parabolic mirrors, concentrators using total internal reflection
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/544—Solar cells from Group III-V materials
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Energy (AREA)
Abstract
Description
Claims (10)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201610962842.4A CN106449848B (zh) | 2016-10-28 | 2016-10-28 | 一种含有复合多光子腔的多结太阳电池 |
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CN201610962842.4A CN106449848B (zh) | 2016-10-28 | 2016-10-28 | 一种含有复合多光子腔的多结太阳电池 |
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Publication Number | Publication Date |
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CN106449848A true CN106449848A (zh) | 2017-02-22 |
CN106449848B CN106449848B (zh) | 2017-09-29 |
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Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1929153A (zh) * | 2005-09-07 | 2007-03-14 | 中国科学院物理研究所 | 一种含有多量子阱结构的InGaN系宽谱太阳能电池 |
CN101388419A (zh) * | 2008-10-27 | 2009-03-18 | 厦门乾照光电有限公司 | 具有反射层的三结太阳电池及其制造方法 |
CN203721752U (zh) * | 2013-12-11 | 2014-07-16 | 天津中环新光科技有限公司 | 带有分布布拉格反射器的三结太阳能电池 |
US20150034153A1 (en) * | 2013-07-30 | 2015-02-05 | Ricoh Company, Ltd. | Compound photovoltaic cell |
CN104409526A (zh) * | 2014-12-03 | 2015-03-11 | 云南师范大学 | 一种基于隧穿反射层的高效硅基薄膜多结太阳电池 |
TW201545364A (zh) * | 2014-05-19 | 2015-12-01 | Taicrystal Internat Technology Co Ltd | 多接面太陽能電池之抗反射多層結構 |
CN105355670A (zh) * | 2015-11-19 | 2016-02-24 | 中山德华芯片技术有限公司 | 一种含dbr结构的五结太阳能电池 |
-
2016
- 2016-10-28 CN CN201610962842.4A patent/CN106449848B/zh active Active
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1929153A (zh) * | 2005-09-07 | 2007-03-14 | 中国科学院物理研究所 | 一种含有多量子阱结构的InGaN系宽谱太阳能电池 |
CN101388419A (zh) * | 2008-10-27 | 2009-03-18 | 厦门乾照光电有限公司 | 具有反射层的三结太阳电池及其制造方法 |
US20150034153A1 (en) * | 2013-07-30 | 2015-02-05 | Ricoh Company, Ltd. | Compound photovoltaic cell |
CN203721752U (zh) * | 2013-12-11 | 2014-07-16 | 天津中环新光科技有限公司 | 带有分布布拉格反射器的三结太阳能电池 |
TW201545364A (zh) * | 2014-05-19 | 2015-12-01 | Taicrystal Internat Technology Co Ltd | 多接面太陽能電池之抗反射多層結構 |
CN104409526A (zh) * | 2014-12-03 | 2015-03-11 | 云南师范大学 | 一种基于隧穿反射层的高效硅基薄膜多结太阳电池 |
CN105355670A (zh) * | 2015-11-19 | 2016-02-24 | 中山德华芯片技术有限公司 | 一种含dbr结构的五结太阳能电池 |
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Inventor after: Zhang Wei Inventor after: Zheng Yi Inventor after: Zhu Kai Inventor after: Li Xinyi Inventor after: Lu Hongbo Inventor after: Chen Jie Inventor after: Zhang Huahui Inventor after: Zhang Mengyan Inventor after: Yang Cheng Inventor after: Zhang Jianqin Inventor before: Zhang Wei Inventor before: Li Xinyi Inventor before: Lu Hongbo Inventor before: Chen Jie Inventor before: Zhang Huahui Inventor before: Zhang Mengyan Inventor before: Yang Cheng Inventor before: Zhang Jianqin Inventor before: Zheng Yi |
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