CN106449803A - Manufacturing method of front surface electrode of silicon wafer - Google Patents
Manufacturing method of front surface electrode of silicon wafer Download PDFInfo
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- CN106449803A CN106449803A CN201611170345.7A CN201611170345A CN106449803A CN 106449803 A CN106449803 A CN 106449803A CN 201611170345 A CN201611170345 A CN 201611170345A CN 106449803 A CN106449803 A CN 106449803A
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- silicon wafer
- front side
- protective layer
- silicon
- electrode
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- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 102
- 239000010703 silicon Substances 0.000 title claims abstract description 102
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 99
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 45
- 238000000034 method Methods 0.000 claims abstract description 54
- 229910021418 black silicon Inorganic materials 0.000 claims abstract description 17
- 238000005530 etching Methods 0.000 claims abstract description 12
- 239000011241 protective layer Substances 0.000 claims description 61
- 239000002002 slurry Substances 0.000 claims description 12
- 238000001312 dry etching Methods 0.000 claims description 11
- 238000007650 screen-printing Methods 0.000 claims description 10
- 239000005543 nano-size silicon particle Substances 0.000 claims description 7
- 238000001020 plasma etching Methods 0.000 claims description 6
- 229920002472 Starch Polymers 0.000 claims description 4
- 235000019698 starch Nutrition 0.000 claims description 4
- 239000002270 dispersing agent Substances 0.000 claims description 3
- 239000008107 starch Substances 0.000 claims description 3
- 239000002562 thickening agent Substances 0.000 claims description 3
- 238000004506 ultrasonic cleaning Methods 0.000 claims description 3
- 238000006243 chemical reaction Methods 0.000 abstract description 9
- 238000001035 drying Methods 0.000 abstract description 2
- 238000007639 printing Methods 0.000 abstract description 2
- 238000005516 engineering process Methods 0.000 description 10
- 210000004027 cell Anatomy 0.000 description 7
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical group [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- 150000003376 silicon Chemical class 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 239000011800 void material Substances 0.000 description 2
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 235000013339 cereals Nutrition 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000003814 drug Substances 0.000 description 1
- 239000008187 granular material Substances 0.000 description 1
- 235000008216 herbs Nutrition 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 210000002268 wool Anatomy 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention discloses a manufacturing method of a front surface electrode of a silicon wafer. The method comprises the following steps: carrying out wet-process texturing on the front surface of the silicon wafer; manufacturing a protection layer on the front surface of the silicon wafer, wherein the shape and position of the protection layer are matched with the shape and position of a front surface electrode fine grid to be manufactured; carrying out dry-process etching on the front surface of the silicon wafer, and forming a black silicon textured surface on a position out of the protection layer; and removing the protection layer, and manufacturing the front surface electrode. According to the manufacturing method of the front surface electrode of the silicon wafer, disclosed by the invention, the problems of grid breaking and false printing of the front surface electrode fine grid can be avoided, and the minimization of an electrode light shielding area can also be guaranteed, so that the conversion efficiency of a battery is improved.
Description
Technical field
The invention belongs to photovoltaic apparatus manufacturing technology field, more particularly to a kind of manufacture method of front side of silicon wafer electrode.
Background technology
With the progress of photovoltaic industry, chase after for solar cell high conversion efficiency and assembly high-output power
Ask, increasing high-efficiency battery technology is applied in the commercialization volume production of crystal-silicon solar cell.Wherein important one kind
High-efficiency battery technology is the black silicon etching technology of RIE reactive ion etching dry method, by plasmarized reacting gas in silicon chip
Front etch the suede structure of submicron order, this matte is made up of a series of small hills of solid matters, the bottom on small hills
Wide size in 100nm, highly in 200nm about so that its frontside reflectivity is far below conventional wet-method etching technology, will
Its reflectance is reduced to less than 5% from the 21% of wet-method etching, considerably increases the short circuit current of battery.But silk-screen printing technique
The raw material of the thin grid line of middle front electrode is silver paste, and the Argent grain contained by this slurry and the size of particles of vitreous are left in 20nm
The right side, the granule of silver paste is close to the size of black silicon matte, and black silion cell has more fine suede structure, allows for front
In electrode screen printing process, thin grid line is not easy to be attached to black silion cell surface, leads to local void to print or a fairly large number of little
Disconnected grid occur, and the width printing thin grid line is less, and this problem is more obvious.
Based on the problems referred to above, in existing black silion cell manufacture process, the width of the thin grid line of battery front side electrode can be increased,
To increase the adhesive force between thin grid line and matte, to improve the problem of disconnected grid, empty print, but to increase the width of thin grid line, must
The shading-area in black silion cell front so can be increased, reduce the conversion efficiency of battery, also can increase the usage amount of silver paste simultaneously, increase
Darken the cost of silion cell.
Content of the invention
For solving the above problems, the invention provides a kind of manufacture method of front side of silicon wafer electrode, front can either be avoided
The disconnected grid of the thin grid of electrode and the problem of empty print, ensure that electrode shading-area minimizes, thus improving the conversion efficiency of battery again.
A kind of manufacture method of front side of silicon wafer electrode that the present invention provides, including：
Carry out wet-method etching in front side of silicon wafer；
Make protective layer, the shape of described protective layer and position and the thin grid of front electrode to be produced in described front side of silicon wafer
Shape and position match；
Carry out dry etching in described front side of silicon wafer, the position outside described protective layer forms black silicon matte；
Remove described protective layer and make front electrode.
Preferably, in the manufacture method of above-mentioned front side of silicon wafer electrode,
Described described front side of silicon wafer make protective layer be：
Starch protective layer in described front side of silicon wafer silk screen printing silicon, and dried.
Preferably, in the manufacture method of above-mentioned front side of silicon wafer electrode,
Described removal described protective layer be：
Remove described silicon slurry protective layer using ultrasonic cleaning mode.
Preferably, in the manufacture method of above-mentioned front side of silicon wafer electrode,
Described described front side of silicon wafer make protective layer be：
Make the protective layer that thickness range is 1 micron to 3 microns in described front side of silicon wafer.
Preferably, in the manufacture method of above-mentioned front side of silicon wafer electrode,
Described described front side of silicon wafer make protective layer be：
Make the protective layer that width range is 80 microns to 250 microns in described front side of silicon wafer.
Preferably, in the manufacture method of above-mentioned front side of silicon wafer electrode,
Before described front side of silicon wafer silk screen printing silicon slurry protective layer, also include：
Prepare silicon slurry using nano silicon particles, organic dispersing agent and thickening agent, the matter of described nano silicon particles wherein, is set
Amount fraction range is 10% to 30%.
Preferably, in the manufacture method of above-mentioned front side of silicon wafer electrode,
Described carry out dry etching in described front side of silicon wafer and be：
Using reactive ion etching mode, carry out dry etching in described front side of silicon wafer.
The manufacture method of the front side of silicon wafer electrode being provided by foregoing description, the present invention, due to including：In silicon chip just
Face carries out wet-method etching；Make protective layer, the shape of described protective layer and position and front to be produced in described front side of silicon wafer
The shape of the thin grid of electrode and position match；Carry out dry etching in described front side of silicon wafer, the position outside described protective layer
Form black silicon matte；Remove described protective layer and make front electrode, therefore can either avoid the disconnected grid of the thin grid of front electrode and void
The problem of print, ensure that electrode shading-area minimizes, thus improving the conversion efficiency of battery again.
Brief description
In order to be illustrated more clearly that the embodiment of the present invention or technical scheme of the prior art, below will be to embodiment or existing
Have technology description in required use accompanying drawing be briefly described it should be apparent that, drawings in the following description be only this
Inventive embodiment, for those of ordinary skill in the art, on the premise of not paying creative work, can also basis
The accompanying drawing providing obtains other accompanying drawings.
The schematic diagram of the manufacture method of the first front side of silicon wafer electrode that Fig. 1 provides for the embodiment of the present application.
Specific embodiment
The core concept of the present invention is to provide a kind of manufacture method of front side of silicon wafer electrode, can either avoid front electrode
The thin disconnected grid of grid and the problem of empty print, ensure that electrode shading-area minimizes, thus improving the conversion efficiency of battery again.
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is carried out clear, complete
Site preparation description is it is clear that described embodiment is only a part of embodiment of the present invention, rather than whole embodiments.It is based on
Embodiment in the present invention, it is every other that those of ordinary skill in the art are obtained under the premise of not making creative work
Embodiment, broadly falls into the scope of protection of the invention.
The manufacture method of the first front side of silicon wafer electrode that the embodiment of the present application provides is as shown in figure 1, Fig. 1 is real for the application
Apply the schematic diagram of the manufacture method of the first front side of silicon wafer electrode of example offer, the method comprises the steps：
S1：Carry out wet-method etching in front side of silicon wafer；
The wet-method texturing manufacturing process that this step is adopted is a kind of traditional handicraft, and here is omitted.
S2：Make protective layer, the shape of described protective layer and position and front electrode to be produced in described front side of silicon wafer
The shape of thin grid and position match；
It should be noted that the figure of this protective layer of silk screen printing is similar with the figure of front electrode, and thin grid line
Corresponding protective layer can be slightly wide than the thin grid line of front electrode.
S3：Carry out dry etching in described front side of silicon wafer, the position outside described protective layer forms black silicon matte；
It should be noted that this black silicon matte is made up of a series of small hills of solid matters, the bottom width size on small hills
In 100nm about, highly in 200nm about, frontside reflectivity is far below conventional wet-method etching technology, therefore, it is possible to making
The mode of black silicon matte is improving conversion efficiency.The position being located in protective layer, will not form black silicon matte, thus without impact
The making of the thin grid of subsequent electrode.
S4：Remove described protective layer and make front electrode.
Specifically, during removing protective layer, medicine ensures not interfering with black silicon matte, after removing protective layer,
Just make front electrode in the original position being located of protective layer, the especially thin grid of front electrode, due to being common wet method herein
Making herbs into wool region, thus without the disconnected grid causing thin grid and empty print, improves front electrode make efficiency, and the width of thin grid is permissible
Accomplish less, reduce the stop to sunlight to greatest extent, thus ensureing conversion efficiency.
The manufacture method of the first the front side of silicon wafer electrode above-mentioned being provided by foregoing description, the embodiment of the present application,
Due to including：Carry out wet-method etching in front side of silicon wafer；Make protective layer, the shape of described protective layer and position in described front side of silicon wafer
Put and match with the shape of the thin grid of front electrode to be produced and position；Carry out dry etching in described front side of silicon wafer, described
Position outside protective layer forms black silicon matte；Remove described protective layer and make front electrode, therefore can either avoid front
The disconnected grid of the thin grid of electrode and the problem of empty print, ensure that electrode shading-area minimizes, thus improving the conversion efficiency of battery again.
The manufacture method of the second front side of silicon wafer electrode that the embodiment of the present application provides, is in the first front side of silicon wafer above-mentioned
On the basis of the manufacture method of electrode, also include following technical characteristic：
Described described front side of silicon wafer make protective layer be：
Starch protective layer in described front side of silicon wafer silk screen printing silicon, and dried.
It should be noted that during making black silicon matte, this silicon starches the table that protective layer ensure that its underpart
Face is not etched, and maintains the original state, and after black silicon matte completes, this silicon slurry protective layer is also easily removed, thus
Make front electrode in its position, it is of course also possible to adopt other kinds of protective layer, do not do any restriction herein.
The manufacture method of the third front side of silicon wafer electrode that the embodiment of the present application provides, is in above-mentioned second front side of silicon wafer
On the basis of the manufacture method of electrode, also include following technical characteristic：
Described removal described protective layer be：
Remove described silicon slurry protective layer using ultrasonic cleaning mode.
It should be noted that the supersonic cleaning machine cost adopting is more cheap and easily operated, in addition, this ultrasonic clear
The mode of washing can effectively remove silicon slurry protective layer, black silicon matte will not be impacted, also will not introduce more impurity, certainly
Other modes may also be employed, do not do any restriction herein.
The manufacture method of the 4th kind of front side of silicon wafer electrode that the embodiment of the present application provides, is in the third front side of silicon wafer above-mentioned
On the basis of the manufacture method of electrode, also include following technical characteristic：
Described described front side of silicon wafer make protective layer be：
Make the protective layer that thickness range is 1 micron to 3 microns in described front side of silicon wafer.
The volume needing explanation is that the thickness range of protective layer provided herein refers to the thickness range after drying, this
Thickness range can either effectively stop that the matte of its underpart is etched, and is also easy to remove it is ensured that cost is relatively low.
The manufacture method of the 5th kind of front side of silicon wafer electrode that the embodiment of the present application provides, is in above-mentioned 4th kind of front side of silicon wafer
On the basis of the manufacture method of electrode, also include following technical characteristic：
Described described front side of silicon wafer make protective layer be：
Make the protective layer that width range is 80 microns to 250 microns in described front side of silicon wafer.
It should be noted that this is to match with the width of the thin gate region of front electrode, can be than corresponding thin grid width
Degree is bigger it is ensured that the grid that will not break in thin grid manufacturing process print with empty.
The manufacture method of the 6th kind of front side of silicon wafer electrode that the embodiment of the present application provides, is in above-mentioned 5th kind of front side of silicon wafer
On the basis of the manufacture method of electrode, also include following technical characteristic：
Before described front side of silicon wafer silk screen printing silicon slurry protective layer, also include：
Prepare silicon slurry using nano silicon particles, organic dispersing agent and thickening agent, the matter of described nano silicon particles wherein, is set
Amount fraction range is 10% to 30%.
It should be noted that the size range of nano silicon particles therein can be this between 20 nanometers to 80 nanometers
Processing technology is relatively simple, and cost is relatively low.
The embodiment of the present application provide the 7th kind of front side of silicon wafer electrode manufacture method, be above-mentioned the first to the 6th kind
In the manufacture method of front side of silicon wafer electrode on the basis of any one, also include following technical characteristic：
Described carry out dry etching in described front side of silicon wafer and be：
Using reactive ion etching mode, carry out dry etching in described front side of silicon wafer.
It should be noted that the mature technology of this reactive ion etching, under the protection of protective layer, under protective layer
The region of side can not contact with the reacting gas of plasma, do not form the finely small matte of submicron order, and do not received by silicon
The region that rice protective layer covers forms submicron order finely small matte.So it is the formation of optionally black silicon in front side of silicon wafer
Matte front electrode region is common polycrystalline wet-method etching matte, and non-electrode region (receiving the region of incident illumination) is submicron
Level finely black silicon matte.
In sum, using such scheme, during silk screen printing front electrode, thin grid line falls in common polycrystalline wet-method etching
On matte, solve the problems, such as that adhesive force is low, it is to avoid disconnected grid that the reduction of front electrode thin grid line width brings, the asking of empty print
Topic.
Described above to the disclosed embodiments, makes professional and technical personnel in the field be capable of or uses the present invention.
Multiple modifications to these embodiments will be apparent from for those skilled in the art, as defined herein
General Principle can be realized without departing from the spirit or scope of the present invention in other embodiments.Therefore, the present invention
It is not intended to be limited to the embodiments shown herein, and be to fit to and principles disclosed herein and features of novelty phase one
The scope the widest causing.
Claims (7)
1. a kind of manufacture method of front side of silicon wafer electrode is it is characterised in that include：
Carry out wet-method etching in front side of silicon wafer；
Make protective layer, the shape of the shape of described protective layer and position and the thin grid of front electrode to be produced in described front side of silicon wafer
Shape and position match；
Carry out dry etching in described front side of silicon wafer, the position outside described protective layer forms black silicon matte；
Remove described protective layer and make front electrode.
2. front side of silicon wafer electrode according to claim 1 manufacture method it is characterised in that
Described described front side of silicon wafer make protective layer be：
Starch protective layer in described front side of silicon wafer silk screen printing silicon, and dried.
3. front side of silicon wafer electrode according to claim 2 manufacture method it is characterised in that
Described removal described protective layer be：
Remove described silicon slurry protective layer using ultrasonic cleaning mode.
4. front side of silicon wafer electrode according to claim 3 manufacture method it is characterised in that
Described described front side of silicon wafer make protective layer be：
Make the protective layer that thickness range is 1 micron to 3 microns in described front side of silicon wafer.
5. front side of silicon wafer electrode according to claim 4 manufacture method it is characterised in that
Described described front side of silicon wafer make protective layer be：
Make the protective layer that width range is 80 microns to 250 microns in described front side of silicon wafer.
6. front side of silicon wafer electrode according to claim 5 manufacture method it is characterised in that
Before described front side of silicon wafer silk screen printing silicon slurry protective layer, also include：
Prepare silicon slurry using nano silicon particles, organic dispersing agent and thickening agent, wherein, the quality arranging described nano silicon particles is divided
Number scope is 10% to 30%.
7. the front side of silicon wafer electrode according to any one of claim 1-6 manufacture method it is characterised in that
Described carry out dry etching in described front side of silicon wafer and be：
Using reactive ion etching mode, carry out dry etching in described front side of silicon wafer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611170345.7A CN106449803A (en) | 2016-12-16 | 2016-12-16 | Manufacturing method of front surface electrode of silicon wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611170345.7A CN106449803A (en) | 2016-12-16 | 2016-12-16 | Manufacturing method of front surface electrode of silicon wafer |
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| CN106449803A true CN106449803A (en) | 2017-02-22 |
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| CN201611170345.7A Pending CN106449803A (en) | 2016-12-16 | 2016-12-16 | Manufacturing method of front surface electrode of silicon wafer |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110112234A (en) * | 2019-05-14 | 2019-08-09 | 江西展宇新能源股份有限公司 | A kind of solar battery sheet, its etching method and solar battery |
| CN110854241A (en) * | 2019-12-13 | 2020-02-28 | 浙江晶科能源有限公司 | Manufacturing method of solar cell with surface selective texture and solar cell |
| CN114695591A (en) * | 2020-12-25 | 2022-07-01 | 苏州阿特斯阳光电力科技有限公司 | Silicon wafer, silicon wafer textured structure and preparation method thereof |
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| CN114695591B (en) * | 2020-12-25 | 2024-03-12 | 苏州阿特斯阳光电力科技有限公司 | Silicon wafer, silicon wafer textured structure and preparation method thereof |
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Application publication date: 20170222 |