CN106449792A - 一种光伏玻璃 - Google Patents
一种光伏玻璃 Download PDFInfo
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- 239000011521 glass Substances 0.000 title claims abstract description 78
- 239000002313 adhesive film Substances 0.000 claims abstract description 9
- 230000005540 biological transmission Effects 0.000 claims abstract description 8
- 239000006117 anti-reflective coating Substances 0.000 claims description 25
- 239000000463 material Substances 0.000 claims description 14
- MCMNRKCIXSYSNV-UHFFFAOYSA-N ZrO2 Inorganic materials O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 3
- 229910052681 coesite Inorganic materials 0.000 claims description 3
- 229910052906 cristobalite Inorganic materials 0.000 claims description 3
- 239000007770 graphite material Substances 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052682 stishovite Inorganic materials 0.000 claims description 3
- 229910052905 tridymite Inorganic materials 0.000 claims description 3
- 230000005611 electricity Effects 0.000 claims description 2
- DQXBYHZEEUGOBF-UHFFFAOYSA-N but-3-enoic acid;ethene Chemical compound C=C.OC(=O)CC=C DQXBYHZEEUGOBF-UHFFFAOYSA-N 0.000 abstract 3
- 239000005038 ethylene vinyl acetate Substances 0.000 abstract 3
- 229920001200 poly(ethylene-vinyl acetate) Polymers 0.000 abstract 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- 239000000146 host glass Substances 0.000 description 3
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 229910052761 rare earth metal Inorganic materials 0.000 description 2
- 150000002910 rare earth metals Chemical class 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 230000032683 aging Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000002596 correlated effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000000446 fuel Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 208000007578 phototoxic dermatitis Diseases 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 239000004984 smart glass Substances 0.000 description 1
- 238000005496 tempering Methods 0.000 description 1
- 239000002918 waste heat Substances 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
- H01L31/0488—Double glass encapsulation, e.g. photovoltaic cells arranged between front and rear glass sheets
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/052—Cooling means directly associated or integrated with the PV cell, e.g. integrated Peltier elements for active cooling or heat sinks directly associated with the PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
本发明公开一种光伏玻璃，包括前增透膜层、上玻璃窗层、后增透膜层、EVA胶膜层、太阳能芯片、下玻璃层和散热层；所述上玻璃窗层和下玻璃层之间平行设置且具有预设宽度的距离，上玻璃窗层和下玻璃层之间安装有太阳能芯片；所述太阳能芯片和上玻璃窗层、下玻璃层分别通过设置EVA胶膜层进行封装；所述上玻璃窗层的上表面设置有前增透膜层，下表面设置有后增透膜层；所述下玻璃层的下表明则设置有散热层。本发明结构简单合理，通过在上玻璃层设置两层增透膜，在下玻璃层外设置散热层的方式，赋予了该光伏玻璃优良的透光性和散热性。
Description
技术领域
本发明涉及玻璃技术领域，具体是一种光伏玻璃。
背景技术
光伏玻璃是一种通过层压入太阳电池，能够利用太阳辐射发电，并具有相关电流引出装置以及电缆的特种玻璃。它有着美观、透光可控、节能发电且它不需燃料，不产生废气，无余热，无废渣，无噪音污染的优点，应用非常广泛，如太阳能智能窗，太阳能凉亭和光伏玻璃建筑顶棚，以及光伏玻璃幕墙等等。光伏玻璃可分为晶体硅光伏玻璃和薄膜光伏玻璃两大类，其中幕墙最常用的是晶体硅类。光伏玻璃的特点是重量轻、厚度薄、可弯曲、易携带，弱光性好，在早晚光线弱的情况下，发电效果优于单晶硅电池。光伏玻璃一种最新颖的建筑用高科技玻璃产品。采用低铁玻璃覆盖在太阳能电池片上，以确保有更多的光线透过率，产生更多的电能。经过钢化处理的低铁玻璃具有更高的强度，可以承受更大的风压及较大的昼夜温差变化。广泛应用于建筑幕墙、光伏屋顶、建筑幕墙、光伏屋顶、遮阳、太阳能发电系统等等众多领域。安装形式可采用明框式、隐框式或配合幕墙的各种型材进行安装。具有应用范围广、安装便捷等优点。
目前市场上和相关文献都公开了很多相关的光伏玻璃产品，例如，CN105967512A，公开了一种光转换光伏玻璃，其包括基质玻璃以及掺杂于基质玻璃的光转换材料，所述光转换材料占所述基质玻璃的重量百分比为1％～10％，所述光转换材料包括稀土荧光材料，所述稀土荧光材料为典型的下转换材料，由于不仅本身不吸收可见光，而且可有效的将紫外光转换成可见光，因而，该光转换光伏玻璃具有较高的可见光透过率。将该光转换光伏玻璃应用于太阳能电池中时，可大大提高太阳能电池的光转换效率，而且可降低紫外光额外造成的器件老化的问题。但是该玻璃主要是在对玻璃的原料进行改进，所用材料不是常规的普通材料，具有造价高，产品价格较为昂贵等缺点。
发明内容
本发明要解决的技术问题是提供一种结构简单、制作成本低的光伏玻璃，具有透光性好、散热快等优点。
为解决上述技术问题，本发明采用以下技术方案：
一种光伏玻璃，包括前增透膜层、上玻璃窗层、后增透膜层、EVA胶膜层、太阳能芯片、下玻璃层和散热层；所述上玻璃窗层和下玻璃层之间平行设置且具有预设宽度的距离，上玻璃窗层和下玻璃层之间安装有太阳能芯片；所述太阳能芯片和上玻璃窗层、下玻璃层分别通过设置EVA胶膜层进行封装；所述上玻璃窗层的上表面设置有前增透膜层，下表面设置有后增透膜层；所述下玻璃层的下表明则设置有散热层。
作为上述技术方案的进一步改进：
所述前增透膜层为由SiO2材质制成的具有增加太阳光透过率功能的微孔结构层。
所述上玻璃窗层为超白玻璃。
所述后增透膜层为由ZrO2材质制成的具有增加太阳光透过率功能的微孔结构层。
所述太阳能芯片为柔性太阳能电池。
所述下玻璃层为普通钢化玻璃。
所述散热层为由石墨材质制成的多孔网状结构层。
所述前增透膜层的厚度为100～200nm，所述后增透膜层的厚度为30～80nm，所述散热层的厚度为0.5～2mm。
本发明的有益效果为：
本发明结构简单合理，通过在上玻璃层设置两层增透膜，在下玻璃层外设置散热层的方式，赋予了该光伏玻璃优良的透光性和散热性。
附图说明
图1为本发明光伏玻璃的结构示意图。
图中标号为：
1、前增透膜层；2、上玻璃窗层；3、后增透膜层；4、EVA胶膜层；5、太阳能芯片；6、下玻璃层；7、散热层。
具体实施方式
下面结合附图对本发明进行说明，应当理解，此处所描述的具体实施方式仅用于说明和解释本发明，并不用于限定本发明。
如图1所示，本实施例的光伏玻璃，包括前增透膜层1、上玻璃窗层2、后增透膜层3、EVA胶膜层4、太阳能芯片5、下玻璃层6和散热层7；上玻璃窗层2和下玻璃层6之间平行设置且具有预设宽度的距离，上玻璃窗层2和下玻璃层6之间安装有太阳能芯片5；太阳能芯片5和上玻璃窗层2、下玻璃层6分别通过设置EVA胶膜层4进行封装；上玻璃窗层2的上表面设置有前增透膜层1，下表面设置有后增透膜层3；下玻璃层6的下表明则设置有散热层7。
其中，所述前增透膜层1为由SiO2材质制成的具有增加太阳光透过率功能的微孔结构层。所述后增透膜层3为由ZrO2材质制成的具有增加太阳光透过率功能的微孔结构层。所述散热层7为由石墨材质制成的多孔网状结构层。
其中，所述上玻璃窗层2为超白玻璃。所述下玻璃层6为普通钢化玻璃。所述太阳能芯片5为柔性太阳能电池。
更进一步的，所述前增透膜层1的厚度为100～200nm，后增透膜层3的厚度为30～80nm，散热层7的厚度为0.5～2mm。
Claims (8)
1.一种光伏玻璃，其特征在于，包括前增透膜层(1)、上玻璃窗层(2)、后增透膜层(3)、EVA胶膜层(4)、太阳能芯片(5)、下玻璃层(6)和散热层(7)；所述上玻璃窗层(2)和下玻璃层(6)之间平行设置且具有预设宽度的距离，上玻璃窗层(2)和下玻璃层(6)之间安装有太阳能芯片(5)；所述太阳能芯片(5)和上玻璃窗层(2)、下玻璃层(6)分别通过设置EVA胶膜层(4)进行封装；所述上玻璃窗层(2)的上表面设置有前增透膜层(1)，下表面设置有后增透膜层(3)；所述下玻璃层(6)的下表明则设置有散热层(7)。
2.根据权利要求1所述的光伏玻璃，其特征在于：所述前增透膜层(1)为由SiO2材质制成的具有增加太阳光透过率功能的微孔结构层。
3.根据权利要求1所述的光伏玻璃，其特征在于：所述上玻璃窗层(2)为超白玻璃。
4.根据权利要求1所述的光伏玻璃，其特征在于：所述后增透膜层(3)为由ZrO2材质制成的具有增加太阳光透过率功能的微孔结构层。
5.根据权利要求1所述的光伏玻璃，其特征在于：所述太阳能芯片(5)为柔性太阳能电池。
6.根据权利要求1所述的光伏玻璃，其特征在于：所述下玻璃层(6)为普通钢化玻璃。
7.根据权利要求1所述的光伏玻璃，其特征在于：所述散热层(7)为由石墨材质制成的多孔网状结构层。
8.根据权利要求1～7中任一项所述的光伏玻璃，其特征在于：所述前增透膜层(1)的厚度为100～200nm，所述后增透膜层(3)的厚度为30～80nm，所述散热层(7)的厚度为0.5～2mm。
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108022982A (zh) * | 2017-11-02 | 2018-05-11 | 五邑大学 | 一种基于ZnO基透明太阳能电池的智能窗及其制备方法 |
| CN115566081A (zh) * | 2022-11-11 | 2023-01-03 | 宁波长阳科技股份有限公司 | 一种光伏组件及其制备方法与太阳能电池 |
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| CN102842630A (zh) * | 2011-06-26 | 2012-12-26 | 江苏顺大半导体发展有限公司 | 一种单晶硅太阳能电池组件 |
| CN202977459U (zh) * | 2012-10-31 | 2013-06-05 | 江苏索拉特光伏科技发展有限公司 | 一种硅电池组件 |
| CN205231084U (zh) * | 2015-11-29 | 2016-05-11 | 湖北华昶能源科技有限公司 | 一种安装有双面镀膜封装玻璃的太阳能电池 |
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- 2016-12-23 CN CN201611203914.3A patent/CN106449792A/zh active Pending
Patent Citations (4)
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| CN102842630A (zh) * | 2011-06-26 | 2012-12-26 | 江苏顺大半导体发展有限公司 | 一种单晶硅太阳能电池组件 |
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| CN202977459U (zh) * | 2012-10-31 | 2013-06-05 | 江苏索拉特光伏科技发展有限公司 | 一种硅电池组件 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN108022982A (zh) * | 2017-11-02 | 2018-05-11 | 五邑大学 | 一种基于ZnO基透明太阳能电池的智能窗及其制备方法 |
| CN115566081A (zh) * | 2022-11-11 | 2023-01-03 | 宁波长阳科技股份有限公司 | 一种光伏组件及其制备方法与太阳能电池 |
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