CN106449681A - Sensitivity-adjustable image sensor structure - Google Patents
Sensitivity-adjustable image sensor structure Download PDFInfo
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- CN106449681A CN106449681A CN201610884340.4A CN201610884340A CN106449681A CN 106449681 A CN106449681 A CN 106449681A CN 201610884340 A CN201610884340 A CN 201610884340A CN 106449681 A CN106449681 A CN 106449681A
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- 230000035945 sensitivity Effects 0.000 claims abstract description 20
- 239000000758 substrate Substances 0.000 claims abstract description 18
- 239000010410 layer Substances 0.000 claims description 102
- 239000003990 capacitor Substances 0.000 claims description 28
- 239000011229 interlayer Substances 0.000 claims description 12
- 230000005540 biological transmission Effects 0.000 claims description 11
- 230000005622 photoelectricity Effects 0.000 claims description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 1
- 229910052760 oxygen Inorganic materials 0.000 claims 1
- 239000001301 oxygen Substances 0.000 claims 1
- 238000005286 illumination Methods 0.000 abstract description 6
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 108010075750 P-Type Calcium Channels Proteins 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
- H01L27/14612—Pixel-elements with integrated switching, control, storage or amplification elements involving a transistor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
The invention provides a sensitivity-adjustable image sensor structure which comprises a photodiode region, a variable reactance capacitance region and a transport tube region, wherein the photodiode region is located in a substrate; the variable reactance capacitance region is located on the substrate; the variable reactance capacitance region and the photodiode region are arranged side by side; the transport tube region is electrically connected with the photodiode region and the variable reactance capacitance region respectively; and the capacitance output by the variable reactance capacitance region is adjusted by adjusting the voltage applied to the variable reactance capacitance region. With the adoption of the distribution and connection relation of the variable reactance capacitance region, the photodiode region and the transport tube region, the capacitance output by the variable reactance capacitance region is adjusted by adjusting the voltage applied to the variable reactance capacitance region, so that an image sensor can adjust the capacitance during a large change of the illumination intensity to adjust the sensitivity, and the problem of quality reduction during the large change of the illumination intensity is effectively avoided.
Description
Technical field
The present invention relates to technical field of integrated circuits, and in particular to a kind of regulatable image sensor architecture of sensitivity.
Background technology
The sensitivity of imageing sensor (CIS) is directly affected by complete depletion type electric capacity (FD electric capacity), at present, by two
Different the to obtain height FD electric capacity by way of CMOS parallel connection of FD electric capacity, so as to obtaining different imageing sensors
Sensitivity.
However, there is following defect in the mode that above-mentioned increase CMOS tube carrys out FD electric capacity in parallel：(1) additionally increase area, increase
The big volume of device, is unfavorable for the miniaturization of device and integrated；(2) due to the structure of two FD electric capacity be fixing, because
This, the capacitance that two FD electric capacity shows is also fixing, arbitrarily can not adjust in use, and this causes imageing sensor
Sensitivity is unadjustable.When intensity of illumination changes particularly generation large change, as capacitance can not regulate and control to cause
Image quality declines.
Content of the invention
In order to overcome problem above, the present invention is intended to provide a kind of regulatable imageing sensor of sensitivity, so as to avoid
The problem that image quality declines when intensity of illumination is changed greatly.
In order to achieve the above object, the invention provides a kind of regulatable image sensor architecture of sensitivity, including：
Photodiode area in a substrate, on substrate and be arranged side by side with photodiode area
Variable reactance capacitor regions, and the transmission area under control being mutually electrically connected with photodiode area and variable reactance capacitor regions respectively
Domain；Wherein, by adjusting the voltage for putting on the variable reactance capacitor regions, the variable reactance capacitor regions institute is adjusted
The electric capacity of output.
Preferably, the variable reactance capacitor regions include：P-type ion implanted region in substrate, it is located at p-type ion
The N-type ion implanted region that side in injection region and by p-type ion implanted region is arranged, the source in N-type ion implanted region
Drain region, positioned at the grid structure on N-type ion implanted region surface, covers the interlayer dielectric layer of grid structure, penetrates interlayer dielectric layer
And the through hole that mutually makes electrical contact with source-drain area and grid structure respectively；The part in the wherein transfer tube region is located at the P
The top of the opposite side of type ion implanted region, and it is right against the p-type ion implanted region of the part lower section in transfer tube region
Constitute the raceway groove in transfer tube region；The electric capacity of the variable reactance capacitor regions is made to reset by controlling the reset through hole.
Preferably, the electric capacity exported by the variable reactance capacitor regions with put on the variable reactance capacitor regions
Voltage proportional.
Preferably, the raceway groove is P-type channel.
Preferably, the grid structure includes grid, the grid oxide layer for being located at gate bottom and the side wall positioned at gate lateral wall,
The side wall is isolated using dielectric layer with the N-type ion implanted region surface.
Preferably, interlayer dielectric layer is also covered in the transmission pipe surface, and the transfer tube includes：Transmission tube grid, position
Transfer tube grid oxide layer in transfer tube gate bottom, it is located at the transfer tube side wall of transfer tube gate lateral wall and penetrates the interlayer
Dielectric layer and the through hole for contacting with the transmission tube grid；Wherein, the bottom of one end of the transfer tube grid oxide layer and the P
The opposite side of type ion implanted region contacts, and the p-type ion implanted region of one end bottom of the transfer tube grid oxide layer is constituted
The raceway groove of transfer tube；First medium layer is adopted between the opposite side of the transfer tube side wall bottom and the p-type ion implanted region
It is isolated.
Preferably, the photodiode area includes：N-type ion implanted layer in substrate, note positioned at N-type ion
Enter layer upper surface and the p-type ion implanted layer for contacting therewith；Wherein, the bottom of the transfer tube grid oxide layer other end and p-type
Ion implanted layer is connected；It is separated by using second dielectric layer between the transfer tube side wall bottom and the p-type ion implanted layer
From.
Preferably, the first medium layer and the second dielectric layer are located at same layer.
Preferably, the N-type ion implanted layer of the photodiode is specifically included：First N-type ion implanted layer, it is located at the
The second N-type ion implanted layer in one N-type ion implanted layer, the bottom of the second N-type ion implanted layer and the first N-type ion
The bottom of implanted layer does not contact；The 3rd N-type ion implanted layer in the second N-type ion implanted layer, the 3rd N-type ion implanting
The bottom of layer is not contacted with the second N-type ion implanted layer bottom；The p-type ion paste loads layer and is located at the 3rd N-type
Ion implanting layer surface.
Preferably, in the substrate with p-type deep-well region, the p-type ion implanted region of the variable reactance capacitor regions and
The photodiode area is respectively positioned in the p-type deep-well region.
The imageing sensor of the present invention, by arranging variable reactance capacitor regions, photodiode area and transmission area under control
The distribution in domain and annexation, it is achieved that put on the voltage of variable reactance electric capacity adjusting variable reactance electric capacity using adjusting
Output capacitance, so that imageing sensor adjusts electric capacity therewith when intensity of illumination is changed greatly come so that sensitivity is adjusted
Section, effectively avoids the problem of the Quality Down that throws into question when intensity of illumination is changed greatly.
Description of the drawings
Fig. 1 is the schematic top plan view of the distribution relation of the imageing sensor various pieces of a preferred embodiment of the present invention
Fig. 2 is the cross section structure schematic diagram of the imageing sensor of a preferred embodiment of the present invention
Specific embodiment
For making present disclosure more clear understandable, below in conjunction with Figure of description, present disclosure is made into one
Step explanation.The specific embodiment the invention is not limited in certainly, the general replacement known to those skilled in the art
Cover within the scope of the present invention.
Below in conjunction with accompanying drawing 1-2 and specific embodiment, the present invention is described in further detail.It should be noted that, accompanying drawing is equal
In the form of simplify very much, using non-accurately ratio, and only in order to convenient, clearly reach and aid in illustrating the present embodiment
Purpose.
In the present embodiment, Fig. 1 is referred to, the regulatable image sensor architecture of sensitivity includes：
Photodiode area 03 (shown in the figure line frame of lower-left) in a substrate 00, on substrate 00 and with light
The variable reactance capacitor regions 01 (shown in the dotted line frame of right side) that photodiode area 03 is arranged side by side, and respectively with two pole of photoelectricity
The transfer tube region 02 (shown in dashed middle line frame) that area under control domain 03 is mutually electrically connected with variable reactance capacitor regions 01；Wherein, by adjusting
Section puts on the voltage of variable reactance capacitor regions 01 to adjust the electric capacity exported by variable reactance capacitor regions 01.Incorporated by reference to figure
2, also there is in substrate 00 p-type deep-well region PW, the p-type ion implanted region 011 of variable reactance capacitor regions 00 and photodiode
Region 03 is respectively positioned in the PW of p-type deep-well region.
Fig. 2 is referred to, in the present embodiment, variable reactance capacitor regions 00 include：P-type ion implanting in substrate 00
Area 011, be located in p-type ion implanted region 011 and N-type ion implanted region that side by p-type ion implanted region 011 is arranged
012, positioned at the grid structure on 012 surface of N-type ion implanted region, and it is located in N-type ion implanted region 012 and in grid structure
The source-drain area (not shown) of down either side, covers the interlayer dielectric layer 04 of grid structure, penetrate interlayer dielectric layer 04 and respectively
The through hole CT1 for mutually making electrical contact with source-drain area and grid structure, wherein contact with source-drain area for reset through hole；Here grid structure
Specifically include grid 016, the grid oxide layer 015 for being located at 016 bottom of grid and the side wall 015 positioned at 016 side wall of grid, side wall 015
It is isolated using dielectric layer 013 with 012 surface of N-type ion implanted region；The part in wherein transfer tube region 01 is located at p-type ion
The top of the opposite side of injection region 011, and it is right against the p-type ion implanted region composition biography of the part lower section in transfer tube region 02
The raceway groove 024 in defeated area under control domain, raceway groove 024 here is P-type channel；Variable reactance capacitor regions are made by controlling reset through hole
01 electric capacity resets.
The type adopted by the variable reactance capacitor regions 01 of the present embodiment is N-type variable reactance electric capacity, variable reactance electricity
Hold region 01 electric capacity for being exported and the voltage proportional for putting on variable reactance capacitor regions 01.That is to say can power transformation
The electric capacity exported by anticapacitance region 01 increases with the increase of the voltage for putting on variable reactance capacitor regions 01, on the contrary then with
Reduction and reduce.
In the present embodiment, interlayer dielectric layer 04 is also covered in 02 surface of transfer tube, and transfer tube 02 includes：Transmission tube grid
022nd, the transfer tube grid oxide layer 023 of transmission tube grid 022 bottom is located at, being located at the transfer tube side wall for transmitting 023 side wall of tube grid
021 and penetrate interlayer dielectric layer 04 and with the transmission through hole CT2 that contacts of tube grid 022；Wherein, transfer tube grid oxide layer 023
The bottom of one end contact with the opposite side of p-type ion implanted region 011, the p-type of one end bottom of transfer tube grid oxide layer 023 from
Sub- injection region 011 constitutes the raceway groove 024 of transfer tube；The opposite side of 021 bottom of transfer tube side wall and p-type ion implanted region 011 it
Between be isolated using first medium layer, preferably, first medium layer, above-mentioned dielectric layer 013 and follow-up second dielectric layer can
So that same layer is located at, that is to say that dielectric layer 013 is covered in 00 surface of whole substrate (being p-type deep-well region PW surface here), then
First medium layer and second dielectric layer belong to a part for dielectric layer 013, and this is also beneficial to simplify preparation technology.
Here photodiode area 03 can include：N-type ion implanted layer in substrate 00, be located at N-type from
Sub- implanted layer upper surface and the p-type ion implanted layer 034 for contacting therewith；Wherein, the bottom of 023 other end of transfer tube grid oxide layer
It is connected with p-type ion implanted layer 034；Second medium is adopted between 021 bottom of transfer tube side wall and p-type ion implanted layer 034
Layer is isolated, and the description with regard to second dielectric layer may refer to foregoing description, repeat no more here.
In the present embodiment, the N-type ion implanted layer of photodiode area 03 is specifically included：First N-type ion implanted layer
031st, the second N-type ion implanted layer 032 being located in the first N-type ion implanted layer 031, the bottom of the second N-type ion implanted layer 032
Portion is not contacted with the bottom of the first N-type ion implanted layer 031；The 3rd N-type ion in the second N-type ion implanted layer 032
Implanted layer 033, the bottom of the 3rd N-type ion implanted layer 033 is not contacted with 032 bottom of the second N-type ion implanted layer；P-type ion
Implanted layer 034 is located at 033 surface of the 3rd N-type ion implanted layer.
Although the present invention is disclosed as above with preferred embodiment, right embodiment is illustrated only for the purposes of explanation, and
Be not used to limit the present invention, those skilled in the art can make without departing from the spirit and scope of the present invention some more
Dynamic and retouching, the protection domain advocated by the present invention should be defined by claims.
Claims (10)
1. the regulatable image sensor architecture of a kind of sensitivity, it is characterised in that include：
Photodiode area in a substrate, on substrate and variable with what photodiode area was arranged side by side
Reactive capacitance region, and the transfer tube region being mutually electrically connected with photodiode area and variable reactance capacitor regions respectively；Its
In, adjust what the variable reactance capacitor regions were exported by adjusting the voltage for putting on the variable reactance capacitor regions
Electric capacity.
2. the regulatable image sensor architecture of sensitivity according to claim 1, it is characterised in that the variable reactance
Capacitor regions include：P-type ion implanted region in substrate, be located in p-type ion implanted region and lean on p-type ion implanted region
Side arrange N-type ion implanted region, the source-drain area in N-type ion implanted region, positioned at N-type ion implanted region surface
Grid structure, covers the interlayer dielectric layer of grid structure, penetrate interlayer dielectric layer and respectively with source-drain area and grid structure phase
The through hole of electrical contact；The part in the wherein transfer tube region is located at the top of the opposite side of the p-type ion implanted region, and
The p-type ion implanted region for being right against the part lower section in transfer tube region constitutes the raceway groove in transfer tube region；By control
The reset through hole is resetted making the electric capacity of the variable reactance capacitor regions.
3. the regulatable image sensor architecture of sensitivity according to claim 2, it is characterised in that the variable reactance
The electric capacity exported by capacitor regions and the voltage proportional for putting on the variable reactance capacitor regions.
4. the regulatable image sensor architecture of sensitivity according to claim 2, it is characterised in that the raceway groove be
Type raceway groove.
5. the regulatable image sensor architecture of sensitivity according to claim 2, it is characterised in that the grid structure
Including grid, the grid oxide layer positioned at gate bottom and the side wall positioned at gate lateral wall, the side wall and the N-type ion implanted region
Surface is isolated using dielectric layer.
6. the regulatable image sensor architecture of sensitivity according to claim 2, it is characterised in that interlayer dielectric layer is also
The transmission pipe surface is covered in, the transfer tube includes：Transmission tube grid, the transfer tube grid oxygen positioned at transfer tube gate bottom
Layer, be located at transfer tube gate lateral wall transfer tube side wall and penetrate the interlayer dielectric layer and with described transmission tube grid connect
Tactile through hole；Wherein, the bottom of one end of the transfer tube grid oxide layer is contacted with the opposite side of the p-type ion implanted region,
The p-type ion implanted region of one end bottom of the transfer tube grid oxide layer constitutes the raceway groove of transfer tube；The transfer tube side wall
It is isolated using first medium layer between the opposite side of bottom and the p-type ion implanted region.
7. the regulatable image sensor architecture of sensitivity according to claim 6, it is characterised in that two pole of the photoelectricity
Area under control domain includes：N-type ion implanted layer in substrate, it is located at N-type ion implanted layer upper surface and the p-type for contacting therewith
Ion implanted layer；Wherein, the bottom of the transfer tube grid oxide layer other end is connected with p-type ion implanted layer；The transfer tube
It is isolated using second dielectric layer between side wall bottom and the p-type ion implanted layer.
8. the regulatable image sensor architecture of sensitivity according to claim 7, it is characterised in that the first medium
Layer and the second dielectric layer are located at same layer.
9. the regulatable image sensor architecture of sensitivity according to claim 7, it is characterised in that two pole of the photoelectricity
The N-type ion implanted layer of pipe is specifically included：First N-type ion implanted layer, the second N-type being located in the first N-type ion implanted layer
Ion implanted layer, the bottom of the second N-type ion implanted layer is not contacted with the bottom of the first N-type ion implanted layer；Positioned at
The 3rd N-type ion implanted layer in two N-type ion implanted layers, the bottom of the 3rd N-type ion implanted layer and the second N-type ion
Implanted layer bottom does not contact；The p-type ion paste loads layer and is located at the 3rd N-type ion implanting layer surface.
10. the regulatable image sensor architecture of sensitivity according to claim 2-9, it is characterised in that the substrate
In with p-type deep-well region, the p-type ion implanted region of the variable reactance capacitor regions and the photodiode area are respectively positioned on
In the p-type deep-well region.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610884340.4A CN106449681A (en) | 2016-10-10 | 2016-10-10 | Sensitivity-adjustable image sensor structure |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610884340.4A CN106449681A (en) | 2016-10-10 | 2016-10-10 | Sensitivity-adjustable image sensor structure |
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| CN106449681A true CN106449681A (en) | 2017-02-22 |
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| CN201610884340.4A Pending CN106449681A (en) | 2016-10-10 | 2016-10-10 | Sensitivity-adjustable image sensor structure |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101840927A (en) * | 2009-03-17 | 2010-09-22 | 夏普株式会社 | Solid-state image capturing element and electronic message unit |
| CN102354698A (en) * | 2011-09-28 | 2012-02-15 | 上海宏力半导体制造有限公司 | Method for realizing high-dynamic CMOS (complementary metal-oxide-semiconductor) image sensor |
| CN103731594A (en) * | 2012-10-12 | 2014-04-16 | 全视科技有限公司 | Compact in-pixel high dynamic range imaging |
-
2016
- 2016-10-10 CN CN201610884340.4A patent/CN106449681A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101840927A (en) * | 2009-03-17 | 2010-09-22 | 夏普株式会社 | Solid-state image capturing element and electronic message unit |
| CN102354698A (en) * | 2011-09-28 | 2012-02-15 | 上海宏力半导体制造有限公司 | Method for realizing high-dynamic CMOS (complementary metal-oxide-semiconductor) image sensor |
| CN103731594A (en) * | 2012-10-12 | 2014-04-16 | 全视科技有限公司 | Compact in-pixel high dynamic range imaging |
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Application publication date: 20170222 |