CN106449670A - Optical module - Google Patents
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- CN106449670A CN106449670A CN201611084720.6A CN201611084720A CN106449670A CN 106449670 A CN106449670 A CN 106449670A CN 201611084720 A CN201611084720 A CN 201611084720A CN 106449670 A CN106449670 A CN 106449670A
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- 230000003287 optical effect Effects 0.000 title claims abstract description 115
- 230000005669 field effect Effects 0.000 claims abstract description 87
- 238000012545 processing Methods 0.000 claims abstract description 48
- 238000006243 chemical reaction Methods 0.000 claims abstract description 22
- 230000005611 electricity Effects 0.000 claims description 18
- 238000000034 method Methods 0.000 claims description 10
- 230000008569 process Effects 0.000 claims description 6
- 241000208340 Araliaceae Species 0.000 claims 1
- 235000005035 Panax pseudoginseng ssp. pseudoginseng Nutrition 0.000 claims 1
- 235000003140 Panax quinquefolius Nutrition 0.000 claims 1
- 235000008434 ginseng Nutrition 0.000 claims 1
- 239000003990 capacitor Substances 0.000 abstract 3
- 238000004891 communication Methods 0.000 description 12
- 230000008901 benefit Effects 0.000 description 7
- 230000001052 transient effect Effects 0.000 description 6
- 238000001514 detection method Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 230000001771 impaired effect Effects 0.000 description 3
- 239000004020 conductor Substances 0.000 description 2
- 230000003111 delayed effect Effects 0.000 description 2
- 239000000284 extract Substances 0.000 description 2
- 238000003780 insertion Methods 0.000 description 2
- 230000037431 insertion Effects 0.000 description 2
- 239000013307 optical fiber Substances 0.000 description 2
- 230000005693 optoelectronics Effects 0.000 description 2
- 230000005622 photoelectricity Effects 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 230000003044 adaptive effect Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 230000005283 ground state Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000010349 pulsation Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/1443—Devices controlled by radiation with at least one potential jump or surface barrier
Abstract
The invention provides an optical module, which comprises a photoelectric conversion unit, a processing unit, a first resistor, a diode, a capacitor, a second resistor and a field-effect transistor, wherein a first end of the first resistor is connected with a first end of the capacitor and a source electrode of the field-effect transistor; the first end of the first resistor is used for introducing a high level; a second end of the first resistor is connected with a positive electrode of the diode; a negative electrode of the diode is connected with a second end of the capacitor, a grid electrode of the field-effect transistor and a first end of the second resistor; a second end of the second resistor is grounded; a drain electrode of the field-effect transistor is connected with a power supply end of the photoelectric conversion unit; an output end of the processing unit is connected with a positive electrode of the diode, and is used for providing a low level to the positive electrode of the diode after the high level is introduced at the first end of the first resistor. The optical module provided by the invention cannot be easily damaged during hot plug.
Description
Technical field
The present invention relates to photoelectric conversion technique, more particularly to a kind of optical module.
Background technology
Optical module has the effect of opto-electronic conversion, and its transmitting terminal is used for converting electrical signals into optical signal, and optical signal
Transmitted by optical fiber, its receiving terminal is used for the optical signal for receiving to be converted into the signal of telecommunication.Due to fiber-optic transfer have frequency high,
The advantage that capacity is big, transfer rate is high, stability is high so that optical module is obtained in present information is exchanged, processes and transmitted
Extensively apply.
Optical module generally includes supply control unit and photoelectric conversion unit.For protecting photoelectric conversion unit, hot plug
Optical module generally realizes soft upper electricity using supply control unit, i.e., when optical module is accessed power supply, control input voltage is slow
Rise to running voltage.Fig. 1 is optical module structure schematic diagram of the prior art, as shown in figure 1, electric capacity C and resistance R is formed filling
Circuit, when power supply is accessed, electric capacity is started to charge up, and the electric current for flowing through in electric capacity C is larger, and therefore, the voltage on resistance R is relatively
Height, the voltage being now applied between the grid of field effect transistor Q and source electrode is closer to, and field effect transistor Q cannot be turned on, with electricity
Hold C and electricity is gradually filled with, the electric current for flowing through in electric capacity C is tapered into, and ohmically voltage is gradually lowered, so as to control applying on the scene
The voltage of the grid of effect pipe Q is gradually lowered by height, and then field effect transistor Q is gradually turned on.
But, above-mentioned supply control unit, power supply moment is accessed just, electric capacity C does not have started charging, does not have in electric capacity C
Have larger current to flow through so that resistance R keeps ground state, therefore so that connecing electric moment, the grid of field effect transistor Q defeated
Entering voltage for ground voltage, i.e., an instantaneous low-voltage being provided to field effect transistor Q, the low-voltage can cause field effect transistor Q instantaneous
Conducting, may cause photoelectric conversion unit moment to suck high current, voltage pulsation from electric power system, and then be possible to affect photoelectricity
The normal work of converting unit, causes to damage to the device in photoelectric conversion unit.There is appearance in hot plug in existing optical module
Easily damaged problem.
Content of the invention
The present invention provides a kind of optical module, easily impaired asks for solve that existing optical module is present in hot plug
Topic.
The present invention provides a kind of optical module, including：Photoelectric conversion unit, processing unit, first resistor, diode, electric capacity,
Second resistance and field effect transistor；Wherein,
The first end of first resistor first end respectively with the electric capacity, and the source electrode of the field effect transistor is even
Connect, the first end of the first resistor is used for accessing high level, the second end of the first resistor and the positive pole of the diode
Connection；
The negative pole of the diode the second end respectively with the electric capacity, the grid of the field effect transistor, and described
The first end connection of two resistance, the second end ground connection of the second resistance；
The drain electrode of the field effect transistor is connected with the feeder ear of the photoelectric conversion unit；
The outfan of the processing unit is connected with the positive pole of diode, is accessed for the first end in the first resistor
After high level, low level is provided to the positive pole of the diode.
The optical module that the present invention is provided, including photoelectric conversion unit, processing unit, first resistor, diode, electric capacity, the
Two resistance and field effect transistor, the second end of first resistor is connected with the positive pole of diode, the negative pole of diode and second resistance
First end connects, when the first end of first resistor and the source electrode of field effect transistor access high level moment, the first end of second resistance
Equally there is higher level with the source electrode of field effect transistor, as the grid of field effect transistor is connected with the first end of second resistance, tool
There is same potential, hence in so that the grid voltage of field effect transistor is to connect electric moment higher, it is impossible to which driving FET is turned on, it is to avoid
Field effect transistor connects the impaired problem of optical module that electric transient switching may cause；First resistor first end access high level it
Afterwards, the outfan of processing unit provides low level to the positive pole of diode so that power supply cannot pass through first resistor and diode
High level is provided to second resistance, and then the conducting of field effect transistor cannot be prevented, power supply is only provided to second resistance by electric capacity
The voltage for gradually changing from high to low, and the electric current in electric capacity only flows to second resistance so that field effect transistor can be gradually turned on,
Diode has the advantages that simple structure, area are little, first resistor can be used to avoiding the positive pole of diode, the first end of electric capacity with
And the source electrode of field effect transistor be connected to same node after when accessing high level again, the outfan of the processing unit that may cause while
Low-voltage, the problem for causing field effect transistor turn on are provided to the source electrode of electric capacity and field effect transistor, and may cause
Circuit burns and then damages the problem of optical module.Therefore, optical module provided in an embodiment of the present invention has simple structure, area
Little, the optical module advantage not easily damaged in hot plug can be avoided.
Description of the drawings
In order to be illustrated more clearly that the embodiment of the present invention or technical scheme of the prior art, below will be to embodiment or existing
Accompanying drawing to be used needed for technology description is had to be briefly described, it should be apparent that, drawings in the following description are these
Some bright embodiments, for those of ordinary skill in the art, without having to pay creative labor, acceptable
Other accompanying drawings are obtained according to these accompanying drawings.
Fig. 1 is optical module structure schematic diagram of the prior art；
Fig. 2 is the structural representation of the optical module embodiment one that the present invention is provided；
Fig. 3 is the structural representation of the optical module embodiment two that the present invention is provided；
Fig. 4 is the structural representation of each pin of optical module；
Fig. 5 is the structural representation of the optical module embodiment three that the present invention is provided；
Fig. 6 is the structural representation of the optical module example IV that the present invention is provided.
Reference：
11 photoelectric conversion units；12 processing units；13 first resistors；
14 diodes；15 electric capacity；16 second resistances；
17 field effect transistor；18 3rd resistors；19 comparators；
20 reference potentials provide circuit；21 the 4th resistance；22 the 5th resistance.
Specific embodiment
Purpose, technical scheme and advantage for making the embodiment of the present invention is clearer, below in conjunction with the embodiment of the present invention
In accompanying drawing, the technical scheme in the embodiment of the present invention is clearly and completely described, it is clear that described embodiment is
The a part of embodiment of the present invention, rather than whole embodiments.Based on the embodiment in the present invention, those of ordinary skill in the art
The every other embodiment for being obtained under the premise of creative work is not made, belongs to the scope of protection of the invention.
Fig. 2 is the structural representation of the optical module embodiment one that the present invention is provided.As shown in Fig. 2 optical module includes：Photoelectricity
Converting unit 11, processing unit 12, first resistor 13, diode 14, electric capacity 15, second resistance 16 and field effect transistor 17；
The first end of first resistor 13 feeder ear respectively with processing unit 12, the first end of electric capacity 14, and field effect
The source electrode connection of pipe 17, the first end of first resistor 13 is used for accessing high level, the second end of first resistor 13 and diode 14
Positive pole connection；
The negative pole of diode 14 the second end respectively with electric capacity 15, the grid of field effect transistor 17, and second resistance 16
First end connects, the second end ground connection of second resistance 16；
The drain electrode of field effect transistor 17 is connected with the feeder ear of photoelectric conversion unit 11；
The outfan of processing unit 12 is connected with the positive pole of diode 14, is accessed for the first end in first resistor 13 high
After level, low level is provided to the positive pole of diode 14.
Specifically, as shown in Fig. 2 optical module includes photoelectric conversion unit 11, processing unit 12, first resistor 13, two poles
Pipe 14, electric capacity 15, second resistance 16 and field effect transistor 17.Wherein, photoelectric conversion unit 11 be for realizing the core of opto-electronic conversion
Heart device, exemplary can also be further divided into receiving unit and transmitting element, and receiving unit is used for receiving optical signal, and will
Optical signal is converted into the signal of telecommunication, and transmitting element is used for converting electrical signals to optical signal, and is sent by optical fiber.Process single
Unit 12, first resistor 13, diode 14, electric capacity 15, second resistance 16 and field effect transistor 17 constitute supply control unit, for right
The power supply of input photoelectric conversion unit 11 is controlled.Optionally, optical module may include two identical supply control units, use
Input power in control receiving unit and transmitting element respectively.In the following embodiment of the present invention, only with a power supply control
As a example by unit, illustrative to the principle of the power supply of control input photoelectric conversion unit 11, rather than to light of the present invention
The restriction of supply control unit number in module.
Specifically, the first end connection of the second end of electric capacity 15 and second resistance 16, the first end of electric capacity 15 is used for accessing
High level, the second end ground connection of second resistance 16.I.e. electric capacity 15 and second resistance 16 are connected in series, and connect offer high level
Power supply and ground.The source S of field effect transistor 17 is connected with the feeder ear of photoelectric conversion unit 11 for accessing high level, drain D, grid
Pole G is connected with the junction point of electric capacity 15 and second resistance 16, and the voltage in second resistance 16 is used for leading for driving FET 17
Logical and shutoff.Exemplary, field effect transistor 17 is P-channel enhancement type FET, the conducting threshold of P-channel enhancement type FET
Value is usually negative.When the voltage difference between the grid G and source S of field effect transistor 17 is less than the conduction threshold of field effect transistor 17
When, field effect transistor 17 is turned on.Source S due to field effect transistor 17 is connected with power supply, therefore, can be by controlling in second resistance 16
Voltage slowly decline so that the voltage difference between the grid of field effect transistor 17 and source electrode slowly reduces, and finally less than
Predetermined threshold value so that field effect transistor 17 is turned on.
The second end due to second resistance 16 is grounded, and first end is connected with power supply by electric capacity 15, when optical module accesses electricity
Source moment (goes up electricity), and electric capacity 15 does not have started charging, without larger current in the series circuit of electric capacity 15 and second resistance 16
Flow through so that the voltage in second resistance 16 is ground voltage, therefore, to connect electric moment in optical module, the grid G of field effect transistor 17
Input voltage is ground voltage, i.e., provide an instantaneous low-voltage to field effect transistor 17, and the low-voltage may cause field effect transistor
17 transient switchings, therefore need to provide a high level for second resistance 16 connecing electric moment, and it are electric to disconnect height upon power-up
Flat, to avoid field effect transistor 17 from turning on.For realizing the technique effect, those skilled in the art are readily conceivable that the second electricity
Resistance 16 is connected with power supply by a switch element, and the conducting by a controller controlling switch unit and shutoff.But, controller
Generally need certain starting time, connection power supply moment cannot normal work, therefore, can still there is optical module and connect electric wink
Between field effect transistor 17 can transient switching problem, meanwhile, even if using simplest switch element be field effect transistor, still suffer from because
Field effect transistor volume is larger, and the problem for dramatically increasing optical module area for causing.
Connect electric moment for solving optical module, field effect transistor 17 may transient switching problem, can will be direct for second resistance 16
Power supply is accessed, so that when optical module accesses power supply, power supply is simultaneously to the source S of field effect transistor 17, and second resistance
16 power supplies so that energising moment, the voltage in second resistance 16 is not ground voltage, it is to avoid the transient switching of field effect transistor 17.
As second resistance 16 is connected to the power supply identical power supply being connected with the source S of field effect transistor 17, it is supplied to so as to ensure that
The voltage of second resistance 16 is no delayed, can also avoid increasing, for second resistance 16, the complex structure that new power supply is caused, and volume increases
Greatly, the problems such as cost increases.
After making optical module connection power supply, the series circuit control being still made up of electric capacity 15 and second resistance 16 is applied to
Driving voltage in the grid G of field effect transistor 17, need to disconnect the company of second resistance 16 and power supply after optical module connection power supply
Connect road.A diode 14, the negative pole of diode 14 and the of second resistance 16 can be increased between second resistance 16 and power supply
One end connects, and the positive pole of diode 14 is connected with power supply.That is 14 control electric current of diode can only flow to second resistance via power supply,
And power supply can not be flowed to via electric capacity 15 or second resistance 16.According to current characteristics, when the positive pole offer one to diode 14 is low
During voltage (such as ground voltage), electric current is no longer pass through diode 14 and flows to second resistance 16, so that power supply is no longer to second
Resistance 16 provides high voltage.
Exemplary, the low-voltage can be provided by a processing unit 12, the outfan connection diode 14 of processing unit 12
Positive pole, after the first end of first resistor 13 accesses high level, the outfan of processing unit 12 provides low to diode 14
Level so that electric current no longer flows to second resistance 16 by diode 14, and then cause high level no longer by diode 14 to
Second resistance 16 provides higher voltage.Wherein, processing unit 12 is specifically as follows high in the first end access of first resistor 13
Level after experiencing preset time period, provides low level to diode 14.
Optionally, on the basis of above-described embodiment, the feeder ear of the first end of first resistor 13 also with processing unit 12
Connection, after the feeder ear of processing unit 12 accesses high level, the outfan of processing unit 12 is carried to the positive pole of diode 14
For low level.
Specifically, when processing unit 12 accesses same high level with first resistor 13, as processing unit 12 needs to open
The dynamic time, therefore, it can be to access high level when the feeder ear of processing unit 12, after processing unit 12 starts, i.e. control process
The outfan of unit 12 provides low level to the positive pole of diode 14.Also high level can be accessed simultaneously for the feeder ear of processing unit 12
After experience preset time period, the outfan of processing unit 12 provides low level to the positive pole of diode 14.
By applying low level side using processing unit 12 to the positive pole of simple structure, the diode 14 of small volume
Formula so that optical module is after connection power supply, still by the slow conducting of the voltage driving FET 17 in second resistance 16, same
When have the advantages that simple structure, area are little.And increased by 14 simple structure of diode does not result in power supply to second resistance 16
The delayed of voltage is provided.
Being just most probably connected to the source electrode of the, first end of electric capacity 15 and field effect transistor 17 in view of diode 14
High level is accessed after one node again, when processing unit 12 provides low-voltage to the positive pole of diode 14, may be while to electricity
Hold the source electrode offer low-voltage of 15 and field effect transistor 17, it will cause field effect transistor 17 turn on.For avoiding processing unit
The conducting of the low-voltage impact field effect transistor 17 that 12 provide, a first resistor 13 of can connecting between diode 14 and power supply.With
When, first resistor 13 be additionally operable to avoid the positive pole when diode 14 and meanwhile with the power supply that high level is provided and the low level place of offer
When reason unit 12 connects, the circuit that may cause burns and then damages the problem of optical module.
Specifically, in actual use, when user inserts optical module in communication system, in optical module, high level is accessed
Moment, processing unit 12 and electric capacity 15 do not start normal work, and the source S of field effect transistor 17 is connected to high level, is sequentially connected
First resistor 13, diode 14, have electric current to pass through in second resistance 16, there is high voltage in second resistance 16 so that field
Voltage in the grid G of effect pipe 17 is higher, and the gate-source voltage difference of field effect transistor 17 is much larger than the conducting of field effect transistor 17
Threshold value, it is ensured that optical module powered on moment field effect transistor 17 is not turned on.
After optical module accesses high level, processing unit 12 starts, and after first resistor 13 accesses high level, by
The outfan of reason unit 12 is to the offer electronegative potential of diode 14 so that flow through the electric current of first resistor 13 no longer by diode
14 flow to second resistance 16.Meanwhile, electric capacity 15 starts normal work, for making full of the phase that quantity is equal on two conductors of electric capacity 15
Counter charges, flows through high current and electric capacity 15 is charged in electric capacity 15, with continuing for charging process, on two conductors of electric capacity 15
The quantity of electric charge more and more, the electric current for flowing through in electric capacity 15 is less and less.Due to the one-way conduction characteristic of diode 14, electricity is flowed through
The electric current for holding 15 only flows to second resistance 16, without flowing to diode 14.Therefore, the voltage in second resistance 16, with electricity
Hold the electric current change from big to small in 15, and be gradually lowered, be gradually lowered so as to provide to the grid G of field effect transistor 17
Voltage, and then cause the gate-source voltage difference of field effect transistor 17 to move closer to conduction threshold so that field effect transistor 17 is gradually led
Logical.
The optical module that the present invention is provided, including photoelectric conversion unit, processing unit, first resistor, diode, electric capacity, the
Two resistance and field effect transistor, the second end of first resistor is connected with the positive pole of diode, the negative pole of diode and second resistance
First end connects, when the first end of first resistor and the source electrode of field effect transistor access high level moment, the first end of second resistance
Equally there is higher level with the source electrode of field effect transistor, as the grid of field effect transistor is connected with the first end of second resistance, tool
There is same potential, hence in so that the grid voltage of field effect transistor is to connect electric moment higher, it is impossible to which driving FET is turned on, it is to avoid
Field effect transistor connects the impaired problem of optical module that electric transient switching may cause；First resistor first end access high level it
Afterwards, the outfan of processing unit provides low level to the positive pole of diode so that power supply cannot pass through first resistor and diode
High level is provided to second resistance, and then the conducting of field effect transistor cannot be prevented, power supply is only provided to second resistance by electric capacity
The voltage for gradually changing from high to low, and the electric current in electric capacity only flows to second resistance so that field effect transistor can be gradually turned on,
Diode has the advantages that simple structure, area are little, first resistor can be used to avoiding the positive pole of diode, the first end of electric capacity with
And the source electrode of field effect transistor be connected to same node after when accessing high level again, the outfan of the processing unit that may cause while
Low-voltage, the problem for causing field effect transistor turn on are provided to the source electrode of electric capacity and field effect transistor, and may cause
Circuit burns and then damages the problem of optical module.Therefore, optical module provided in an embodiment of the present invention has simple structure, area
Little, the optical module advantage not easily damaged in hot plug can be avoided.
Exemplary, when extracting for optical module, send out due to shaking the size of current for flowing through field effect transistor that may cause
Changing, so as to produce back-emf, causes damage to optical module, present invention further propose that a kind of optical module.Real shown in Fig. 2
On the basis of applying example, Fig. 3 is the structural representation of the optical module embodiment two that the present invention is provided.As shown in figure 3, optical module
Position signal port is grounded by 3rd resistor 18；
Processing unit 12 is connected with the signal port in place of optical module, for the current potential in signal port in place less than default
During current potential, high level is provided to the positive pole of diode 14, so that field effect transistor 17 is turned off.
Fig. 4 is the structural representation of each pin of optical module.For convenience of optical module access communications system, each pin of optical module
It is designed as golden finger form.Each pin can be divided into holding wire, power and ground according to the difference of function.As shown in figure 4,
For protecting each device in optical module, each pin of optical module is set to different length.Wherein, holding wire, power line, line length
Increase successively, and ground wire access communications system at first is caused, holding wire access communications system the latest.Meanwhile, pull out in optical module
When going out, holding wire disconnects at first, next to that power line, is finally ground wire.For each device in guarantee optical module when extracted optical module
The safety of part, needs in time detection to go out optical module and extracts.
Specifically, existing optical module provides a signal port in place being connected with holding wire, for determining communication system
Optical module whether is had to insert, signal port in place is internal normally grounded in optical module.It is used in communication system detecting that optical module is
Power supply is preset in the generally connection of the detection port of no access, when optical module is not inserted into, detects that the current potential of port is high potential.Work as light
When module is accessed, detect that the current potential of port is dragged down by the ground potential of signal port in place, so as to can detect that optical module insertion.For
Optical module itself is made to determine whether optical module extracts communication system, deenergization, can be as shown in figure 3, letter in place by optical module
Number port is grounded by 3rd resistor 18, so that when optical module is not inserted into communication system, the current potential of signal port in place
For ground potential, when optical module inserts communication system, accesses power supply, 3rd resistor 18 is connected by the detection port of communication system
To power supply is preset, in 3rd resistor 18, there is voltage, now, the current potential of signal port in place is the electricity in 3rd resistor 18
Position, more than ground potential, optical module can be by the change of the current potential on detection signal port in place, so that it is determined that whether optical module pulls out
Go out communication system, simultaneously as signal port in place is connected with holding wire, when the holding wire of optical module is extracted at first, disconnect electricity
During source, optical module can detect that have been extracted from communication system.
Processing unit 12 is connected with the signal port in place of optical module, when the current potential of signal port in place is less than preset potential
When, high level is exported to the positive pole of diode 14 so that power supply can pass through diode 14 and directly provide high electricity to second resistance 16
Pressure, and then field effect transistor 17 is turned off.When the current potential of signal port in place is higher than preset potential, illustrate that optical module insertion is logical
Letter system, accesses power supply, and optical module works.When the current potential of signal port in place is less than preset potential, illustrate to pull out
Go out optical module, deenergization, now processing unit 12 provide high level to the positive pole of diode 14, power supply is directly to second resistance
16 provide high voltage so that the current potential in second resistance 16 is raised, and then field effect transistor 17 is turned off.Due to signal end in place
Mouthful be connected with the holding wire that is extracted in optical module at first, can in time detection to optical module plug so that extracting optical mode
During block, field effect transistor 17 is constantly in off state, it is to avoid the size of current for causing because of shake persistently changes, and produces
Back-emf, damages optical module.
The optical module that the present invention is provided, by increasing 3rd resistor further, and the signal port in place of optical module is led to
3rd resistor ground connection is crossed, processing unit is connected with the signal port in place with optical module so that processing unit can be believed according in place
The current potential of number port determines whether optical module is extracted, and when extracted, provides high level to the positive pole of diode, so that
Power supply can pass through diode and provide high voltage to second resistance, and then cause field effect transistor shutoff, to extract optical module in user
When, it is to avoid change because shaking the size of current for flowing through field effect transistor that may cause, so as to produce back-emf, to optical module
Cause damage.
Further, on the basis of above-described embodiment, Fig. 5 is that the structure of the optical module embodiment three that the present invention is provided is shown
It is intended to, as shown in figure 5, optical module also includes：Comparator 19 and reference potential provide circuit 20；
Signal port in place is also connected with the positive input terminal of comparator 19, and the negative input end of comparator 19 is carried with reference potential
Connect for circuit 20, the outfan of comparator 19 is connected with processing unit 12；
Reference potential provides circuit 20 to be used for providing preset potential.
Specifically, unit 12, requirement of the reduction to 12 disposal ability of processing unit to simplify the process, can increase in optical module
Plus comparator 19 and reference potential provide circuit 20, detect the current potential of signal port in place whether less than default electricity by comparator 19
Position, and testing result is transmitted directly to processing unit 12, processing unit 12 directly can be controlled whether to two according to testing result
Pole pipe 14 provides high level.
Further, Fig. 6 is the structural representation of the optical module example IV that the present invention is provided, as shown in fig. 6, with reference to electricity
Position provides circuit 20 includes the 4th resistance 21 and the 5th resistance 22；
The first end of the 4th resistance 21 is connected with the first end of first resistor 13, the second end of the 4th resistance 21 and the 5th electricity
The first end connection of resistance 22, the second end ground connection of the 5th resistance 22.
Specifically, Fig. 6 shows that a kind of possible reference potential provides the electrical block diagram of circuit 20.Reference potential
There is provided circuit 20 to be connected by two resistant series, and connect power supply and ground connection, provided according to the distribution of the resistance of two resistance default
Current potential, the resistance of the 5th resistance 22 is bigger, and the preset potential that reference potential provides the offer of circuit 20 is higher.
The parameter of the devices such as resistance further, in any of the above-described embodiment, electric capacity, field effect transistor, all can basis
Demand carries out adaptive setting.
Optionally, the resistance of first resistor is less than the resistance of second resistance.Exemplary, the resistance of first resistor is 10,000
Ohm, the resistance of second resistance is 1 megohm.
Optionally, the resistance of the 4th resistance is more than the resistance of the 5th resistance.Exemplary, the resistance of the 4th resistance is 10,000
Ohm, the resistance of the 5th resistance is 75 ohm.
Optionally, the resistance of 3rd resistor is 150 ohm.
One of ordinary skill in the art will appreciate that：The all or part of step for realizing above-mentioned each method embodiment can be led to
Cross the related hardware of programmed instruction to complete.Aforesaid program can be stored in a computer read/write memory medium.The journey
Sequence upon execution, executes the step of including above-mentioned each method embodiment；And aforesaid storage medium includes：ROM, RAM, magnetic disc or
Person's CD etc. is various can be with the medium of store program codes.
Finally it should be noted that：Various embodiments above only in order to technical scheme to be described, rather than a limitation；To the greatest extent
Pipe has been described in detail to the present invention with reference to foregoing embodiments, it will be understood by those within the art that：Its according to
So the technical scheme described in foregoing embodiments can be modified, or which part or all technical characteristic are entered
Row equivalent；And these modifications or replacement, do not make the essence of appropriate technical solution depart from various embodiments of the present invention technology
The scope of scheme.
Claims (10)
1. a kind of optical module, it is characterised in that include：Photoelectric conversion unit, processing unit, first resistor, diode, electric capacity,
Second resistance and field effect transistor；Wherein,
The first end of first resistor first end respectively with the electric capacity, and the source electrode connection of the field effect transistor, institute
The first end of first resistor is stated for high level is accessed, the second end of the first resistor is connected with the positive pole of the diode；
The negative pole of the diode the second end respectively with the electric capacity, the grid of the field effect transistor, and second electricity
The first end connection of resistance, the second end ground connection of the second resistance；
The drain electrode of the field effect transistor is connected with the feeder ear of the photoelectric conversion unit；
The outfan of the processing unit is connected with the positive pole of diode, accesses high electricity for the first end in the first resistor
After flat, low level is provided to the positive pole of the diode.
2. optical module according to claim 1, it is characterised in that the first end of the first resistor also with described process single
The feeder ear connection of unit, after the feeder ear of the processing unit accesses high level, the outfan of the processing unit is to institute
The positive pole for stating diode provides low level.
3. optical module according to claim 2, it is characterised in that the signal port in place of the optical module is by the 3rd electricity
Resistance ground connection；
The processing unit is connected with the signal port in place of the optical module, low for current potential in the signal port in place
When preset potential, high level is provided to the positive pole of the diode, so that the field effect transistor is turned off.
4. optical module according to claim 3, it is characterised in that also include：Comparator and reference potential provide circuit；
The signal port in place is also connected with the positive input terminal of the comparator, the negative input end of the comparator and the ginseng
Examine current potential and circuit connection is provided, the outfan of the comparator is connected with the processing unit；
The reference potential provides circuit to be used for providing the preset potential.
5. optical module according to claim 4, it is characterised in that the reference potential provide circuit include the 4th resistance and
5th resistance；
The first end of the 4th resistance is connected with the first end of the first resistor, the second end of the 4th resistance with described
The first end connection of the 5th resistance, the second end ground connection of the 5th resistance.
6. the optical module according to any one of claim 1 to 5, it is characterised in that the resistance of the first resistor is less than institute
State the resistance of second resistance.
7. optical module according to claim 6, it is characterised in that the resistance of the first resistor is 10,000 ohm, described the
The resistance of two resistance is 1 megohm.
8. optical module according to claim 5, it is characterised in that the resistance of the 4th resistance is more than the 5th resistance
Resistance.
9. optical module according to claim 8, it is characterised in that the resistance of the 4th resistance is 10,000 ohm, described the
The resistance of five resistance is 75 ohm.
10. the optical module according to any one of claim 3 to 5, it is characterised in that the resistance of the 3rd resistor be
Ohm.
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| CN106449670B CN106449670B (en) | 2019-03-12 |
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| CN107589737A (en) * | 2017-09-29 | 2018-01-16 | 兰州飞行控制有限责任公司 | A kind of steering wheel circuit that can control shake |
| CN108375710A (en) * | 2018-01-05 | 2018-08-07 | 昂纳信息技术（深圳）有限公司 | A kind of detecting system of optical module |
| WO2019128953A1 (en) * | 2017-12-29 | 2019-07-04 | 华为技术有限公司 | Single board of optical line terminal and optical line terminal |
| CN111556384A (en) * | 2020-04-24 | 2020-08-18 | 东莞铭普光磁股份有限公司 | Optical module receiving circuit and optical module |
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| CN106449670B (en) | 2019-03-12 |
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Effective date of registration: 20190203 Address after: 529000 No. 8 Haixin Avenue, Tangxia Town, Pengjiang District, Jiangmen City, Guangdong Province Applicant after: Guangdong Hisense Broadband Technology Co., Ltd. Address before: 266555 No. 218, Qian Wan Gang Road, Qingdao economic and Technological Development Zone, Shandong Applicant before: Hisense Broadband Multimedia Technology |
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