CN106449493B - Graphite base suitable for manufacturing light-emitting diode - Google Patents

Graphite base suitable for manufacturing light-emitting diode Download PDF

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Publication number
CN106449493B
CN106449493B CN201610867833.7A CN201610867833A CN106449493B CN 106449493 B CN106449493 B CN 106449493B CN 201610867833 A CN201610867833 A CN 201610867833A CN 106449493 B CN106449493 B CN 106449493B
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Prior art keywords
steps
area
emitting diode
grooves
light
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CN201610867833.7A
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CN106449493A (en
Inventor
周飚
胡任浩
胡加辉
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HC Semitek Zhejiang Co Ltd
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HC Semitek Zhejiang Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes

Abstract

The invention discloses a graphite base suitable for manufacturing a light-emitting diode, and belongs to the technical field of semiconductors. The graphite base is discoid, be equipped with a plurality of recesses on the graphite base, be equipped with on the lateral wall of recess and be used for with emitting diode is unsettled to be placed a plurality of lugs in the recess, the lug includes along first step, second step and the third step that the extending direction of recess set gradually, all the area that first step encloses the region is greater than all the area that the second step encloses the region, all the area that the second step encloses is greater than emitting diode's size, all the area that the third step encloses the region is less than emitting diode's size. The invention improves the uniformity and the edge yield of the light-emitting diode.

Description

Graphite base suitable for manufacturing light-emitting diode
Technical Field
The invention relates to the technical field of semiconductors, in particular to a graphite base suitable for manufacturing a light-emitting diode.
Background
The semiconductor Light Emitting diode (English: Light Emitting Diodes, abbreviated as LED) has the advantages of high efficiency, energy saving and environmental protection, has wide application in the fields of traffic indication, outdoor full color display and the like, can realize semiconductor solid-state illumination by utilizing the high-power LED, and is expected to become a new generation Light source to enter thousands of households to cause revolution of human illumination history.
The LEDs are typically placed on a graphite submount during fabrication. The graphite base is a disc which adopts high-purity graphite as a base material and is plated with a SiC coating. A plurality of grooves are formed in the disc, and a plurality of LEDs are respectively suspended in different grooves.
In the process of implementing the invention, the inventor finds that the prior art has at least the following problems:
when the LED is manufactured, the graphite base can continuously rotate, and heat energy provided by the heating wires is conducted to the LED in the groove through the graphite base. Under the effect of centrifugal force, the side face of the LED can be tightly attached to the side wall close to the edge of the graphite base in the groove, and the temperature of the side face, in contact with the graphite base, of the LED is obviously higher than that of other side faces, so that the uniformity and the edge yield of the LED are influenced.
Disclosure of Invention
In order to solve the problems in the prior art, embodiments of the present invention provide a graphite base suitable for manufacturing a light emitting diode. The technical scheme is as follows:
the embodiment of the invention provides a graphite base suitable for manufacturing a light-emitting diode, wherein the graphite base is disc-shaped, a plurality of grooves are formed in the graphite base, a plurality of lugs used for placing the light-emitting diode in the grooves in a suspended mode are arranged on the side walls of the grooves, the lugs comprise a first step, a second step and a third step which are sequentially arranged along the extending direction of the grooves, the area of a region surrounded by all the first steps is larger than that of a region surrounded by all the second steps, the area of a region surrounded by all the second steps is larger than that of the light-emitting diode, and the area of a region surrounded by all the third steps is smaller than that of the light-emitting diode.
Optionally, the area of the region surrounded by all the first steps gradually decreases along the extending direction of the groove, the area of the region surrounded by all the second steps gradually increases along the extending direction of the groove, and the area of the region surrounded by all the third steps remains unchanged.
Optionally, the width of the first step gradually decreases along the extending direction of the groove, the width of the second step gradually decreases along the extending direction of the groove, and the width of the third step remains unchanged.
Preferably, the average width of the first step is greater than the average width of the second step, and the average width of the second step is greater than the width of the third step.
Optionally, the ratio of the length of the first step perpendicular to the width direction to the length of the second step perpendicular to the width direction is 1: 1-1: 100.
preferably, the length of the second step perpendicular to the width direction is 6-10 times of the length of the first step perpendicular to the width direction.
Optionally, the height of the first step is 50-55 times the height of the second step.
Optionally, the cross section of the groove is circular, and all the bumps arranged in the same groove are uniformly distributed on the edge of the circle.
Preferably, the centers of the grooves are connected into an inner ring and an outer ring which are concentric with the center of the disc, and the diameter of the outer ring is larger than that of the inner ring.
More preferably, the number of the grooves distributed on the outer ring is greater than the number of the grooves distributed on the inner ring.
The technical scheme provided by the embodiment of the invention has the following beneficial effects:
the first steps, the second steps and the third steps are sequentially arranged along the extending direction of the groove, the area of the area surrounded by all the first steps is larger than that of the area surrounded by all the second steps, the area of the area surrounded by all the second steps is larger than that of the light-emitting diode, the area of the area surrounded by all the third steps is smaller than that of the light-emitting diode, the light-emitting diode is placed on the third steps, the light-emitting diode is limited in the groove by the first steps and the second steps at the same time, meanwhile, the area surrounded by all the first steps is larger than that of the area surrounded by all the second steps, the light-emitting diode is only tightly attached to the second steps under the action of centrifugal force, the side area of the light-emitting diode, which is in contact with the graphite base, is reduced, the temperature is effectively prevented from being uneven, and the uniformity and the edge yield.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings needed to be used in the description of the embodiments will be briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.
FIG. 1 is a schematic structural diagram of a graphite susceptor provided in an embodiment of the present invention;
FIG. 2 is a schematic structural diagram of a groove provided in an embodiment of the present invention;
FIG. 3 is a schematic structural diagram of the bump A-A in FIG. 2 according to an embodiment of the present invention;
fig. 4 is a schematic structural diagram of a direction B of the bump in fig. 2 according to an embodiment of the present invention;
fig. 5 is a schematic structural diagram of the bump C in fig. 4 according to an embodiment of the invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, embodiments of the present invention will be described in detail with reference to the accompanying drawings.
Examples
An embodiment of the present invention provides a graphite base suitable for manufacturing a light emitting diode, referring to fig. 1 and fig. 2, the graphite base 10 is in a shape of a disk, a plurality of grooves 20 are disposed on the graphite base 10, a plurality of bumps 30 for suspending the light emitting diode in the grooves 20 are disposed on the side walls of the grooves 20, referring to fig. 3 and fig. 4, the bumps 30 include first steps 31, second steps 32 and third steps 33 sequentially disposed along the extending direction of the grooves, the area of the region 41 surrounded by all the first steps 31 is larger than the area of the region 42 surrounded by all the second steps 32, the area of the region 42 surrounded by all the second steps 32 is larger than the size of the light emitting diode, and the area of the region 43 surrounded by all the third steps 33 is smaller than the size of the light emitting diode.
Alternatively, referring to fig. 3, the area of the region 41 surrounded by all the first steps 31 may gradually decrease along the extending direction of the groove 20, the area of the region 42 surrounded by all the second steps 32 may gradually increase along the extending direction of the groove 20, and the area of the region 43 surrounded by all the third steps 33 may remain unchanged.
Specifically, the maximum area of the region 41 surrounded by all the first steps 31 may be a circle with a diameter of 100.85mm to 101.15mm, the maximum area of the region 42 surrounded by all the second steps 32 may be a circle with a diameter of 100.55 mm to 100.85mm, and the area of the region 43 surrounded by all the third steps 33 may be a circle with a diameter of 98.55 mm to 98.85 mm.
Alternatively, referring to fig. 4 and 5, the width of the first step 31 may be gradually reduced in the extending direction of the groove 20, the width of the second step 32 may be gradually reduced in the extending direction of the groove 20, and the width of the third step 33 may be maintained constant.
Preferably, referring to fig. 4 and 5, the average width of the first step 31 may be greater than the average width of the second step 32, and the average width of the second step 32 may be greater than the width of the third step 33.
Specifically, the side of the first step 31 may be a circular ring edge with a diameter of 3.18mm, the side of the second step 32 may be a circular ring edge with a diameter of 3mm, and the width of the third step 33 may be 5 mm.
Optionally, the ratio of the length of the first step 31 perpendicular to the width direction to the length of the second step 32 perpendicular to the width direction may be 1:1 to 1: 100.
preferably, the length of the second step 32 perpendicular to the width direction may be 6 to 10 times the length of the first step 31 perpendicular to the width direction.
Alternatively, the height of the first step 31 may be 50 to 55 times the height of the second step 32.
Specifically, the height of the first step 31 may be 0.03mm, and the height of the second step 32 may be 0.68 to 0.76 mm.
Alternatively, the cross-section of the recess 20 may be circular, and all the protrusions 30 provided in the same recess 20 may be evenly distributed at the edge of the circle.
Preferably, referring to fig. 1, the centers of all the grooves 20 may be connected into an inner ring 51 and an outer ring 52 concentric with the center of the disk, and the diameter of the outer ring 52 is larger than that of the inner ring 51.
More preferably, the number of grooves 20 distributed on the outer ring 52 may be greater than the number of grooves 20 distributed on the inner ring 51.
Specifically, referring to fig. 1, the number of the grooves 20 distributed on the outer ring 52 may be 10, and the number of the grooves 20 distributed on the inner ring 51 may be 4.
Further, referring to fig. 1, the grooves 20 distributed on the outer ring 52 may be uniformly distributed on the outer ring 52, and the grooves 20 distributed on the inner ring 51 may be uniformly distributed on the inner ring 51.
According to the embodiment of the invention, the first steps, the second steps and the third steps are sequentially arranged along the extending direction of the groove, the area of the area surrounded by all the first steps is larger than that of the area surrounded by all the second steps, the area of the area surrounded by all the second steps is larger than that of the light-emitting diode, the area of the area surrounded by all the third steps is smaller than that of the light-emitting diode, the light-emitting diode is placed on the third steps, the light-emitting diode is limited in the groove by the first steps and the second steps at the same time, and meanwhile, as the area of the area surrounded by all the first steps is larger than that of the area surrounded by all the second steps, the light-emitting diode is only clung to the second steps under the action of centrifugal force, the side surface area of the light-emitting diode, which is in contact with the graphite base, is reduced, the temperature unevenness is effectively avoided.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents, improvements and the like that fall within the spirit and principle of the present invention are intended to be included therein.

Claims (9)

1. The graphite base is suitable for manufacturing the light-emitting diode, and is characterized in that the graphite base is disc-shaped, a plurality of grooves are formed in the graphite base, a plurality of lugs used for placing the light-emitting diode in the grooves in a suspended mode are arranged on the side walls of the grooves, the lugs comprise a first step, a second step and a third step which are sequentially arranged along the extending direction of the grooves, the area of a region surrounded by all the first steps is larger than that of a region surrounded by all the second steps, the area of a region surrounded by all the second steps is larger than the size of the light-emitting diode, and the area of a region surrounded by all the third steps is smaller than the size of the light-emitting diode; the width of the first step is gradually reduced along the extending direction of the groove, the width of the second step is gradually reduced along the extending direction of the groove, and the width of the third step is kept unchanged; the area of the area surrounded by all the first steps is gradually reduced along the extending direction of the groove, the area of the area surrounded by all the second steps is gradually increased along the extending direction of the groove, and the junction of the first steps and the second steps is in a sharp angle.
2. The graphite susceptor of claim 1, wherein the area of the region surrounded by all of the third steps remains constant.
3. The graphite susceptor of claim 1 or 2, wherein the first step has an average width greater than that of the second step, and the second step has an average width greater than that of the third step.
4. The graphite susceptor according to claim 1 or 2, wherein a ratio of a length of the first step perpendicular to the width direction to a length of the second step perpendicular to the width direction is 1:1 to 1: 100.
5. the graphite susceptor of claim 4, wherein the length of the second step perpendicular to the width direction is 6 to 10 times the length of the first step perpendicular to the width direction.
6. The graphite susceptor of claim 1 or 2, wherein the height of the first step is 50 to 55 times the height of the second step.
7. The graphite susceptor according to claim 1 or 2, wherein the cross-section of the grooves is circular, and all the projections provided in the same groove are uniformly distributed on the edge of the circle.
8. The graphite susceptor of claim 7, wherein the centers of all the grooves are connected to form an inner ring and an outer ring concentric with the center of the disk, and the diameter of the outer ring is larger than that of the inner ring.
9. The graphite susceptor of claim 8, wherein the number of grooves distributed on the outer ring is greater than the number of grooves distributed on the inner ring.
CN201610867833.7A 2016-09-30 2016-09-30 Graphite base suitable for manufacturing light-emitting diode Active CN106449493B (en)

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CN110079790B (en) * 2019-04-17 2020-12-22 华灿光电（浙江）有限公司 Graphite base

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102983093A (en) * 2012-12-03 2013-03-20 安徽三安光电有限公司 Graphite wafer carrier used during manufacturing process of LED epitaxy wafers
CN203760506U (en) * 2014-02-28 2014-08-06 上海东洋炭素有限公司 Overall wavelength uniformity improving graphite pedestal
CN203839356U (en) * 2014-05-08 2014-09-17 安徽三安光电有限公司 Wafer carrier for epitaxial growth
CN204874729U (en) * 2015-07-27 2015-12-16 美尔森先进石墨（昆山）有限公司 Graphite dish among MO CVD equipment

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8486726B2 (en) * 2009-12-02 2013-07-16 Veeco Instruments Inc. Method for improving performance of a substrate carrier

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102983093A (en) * 2012-12-03 2013-03-20 安徽三安光电有限公司 Graphite wafer carrier used during manufacturing process of LED epitaxy wafers
CN203760506U (en) * 2014-02-28 2014-08-06 上海东洋炭素有限公司 Overall wavelength uniformity improving graphite pedestal
CN203839356U (en) * 2014-05-08 2014-09-17 安徽三安光电有限公司 Wafer carrier for epitaxial growth
CN204874729U (en) * 2015-07-27 2015-12-16 美尔森先进石墨（昆山）有限公司 Graphite dish among MO CVD equipment

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