CN106449385B - The method for eliminating defect caused by electronics beam scanning - Google Patents
The method for eliminating defect caused by electronics beam scanning Download PDFInfo
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- CN106449385B CN106449385B CN201611087812.XA CN201611087812A CN106449385B CN 106449385 B CN106449385 B CN 106449385B CN 201611087812 A CN201611087812 A CN 201611087812A CN 106449385 B CN106449385 B CN 106449385B
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- beam scanning
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
Abstract
The present invention provides a kind of method for eliminating defect caused by electronics beam scanning, provides a wafer, the wafer carried out first time electron beam scanning process；Process of surface treatment is carried out to by the wafer of first time electron beam scanning process, until the residual charge that will be located at the crystal column surface is eliminated, specifically, this process of surface treatment includes that wafer is carried out to second of electronics beam scanning, is put into vacuum cavity standing, then carries out heat treatment to wafer and clean to crystal column surface at least one of both techniques using solion.The residual charge of crystal column surface can be made to be eliminated or make charge ordered arrangement again using the above method, it is simple and convenient without destroying the structure of wafer, the yield of wafer can be effectively improved.
Description
Technical field
The present invention relates to field of semiconductor technology, the in particular to method of defect caused by elimination electronics beam scanning.
Background technique
With the development of integrated circuit technology, semiconductor technology also becomes increasingly complex, and many new processes are introduced into, in order to examine
The effect of these new processes is surveyed, accordingly, the application of electron beam Defect Scanning is also more and more, does not need much to be detected originally
Processing step more and more applied electronics beam scanning.Electronics beam scanning is carried out to sample using scanning electron microscope (SEM)
To carry out the basic principle of failure analysis to it are as follows: sample generates secondary electricity under the excitation for the electron beam that scanning electron microscope emits
Son, shows using image and records the secondary electron image that system showed and recorded sample, and secondary electron image can reflect sample
The pattern of product.
However, increasing along with electron beam scanning process step, it was found that some electronics beam scannings itself are to advanced production
The negative effect of product bring.For example, the well region photoetching (WELL in active area (Active Area, abbreviation AA) technique
Photo electronics beam scanning) was carried out before technique, will lead to serious photoresist poisoning, specific manifestation after photoetching process
It peels off as depicted in figs. 1 and 2 in Fig. 1 for photoresist 01 for the deformation even peeling phenomenon of photoresist, is sent out in Fig. 2 for photoresist 01
Change shape.Applicants have found that these are residual this is because crystal column surface can generate a small amount of charge residue after electronics beam scanning
The charge stayed is the generation that reacted to each other due to incident electron and surfacing, i.e. the secondary electron of surfacing evolution and incident
Secondary electron quantity it is different, cause crystal column surface material that metastable state state is presented.Material under this state, will affect it
The hydrophily and hydrophobic nature of body to make photoresist and its subsurface material adhesion reduce in photo-etching technological process, and produce
Third contact of a total solar or lunar eclipse resistive shape or peeling phenomenon.
Summary of the invention
The invention proposes a kind of methods of defect caused by elimination electronics beam scanning, to the wafer scanned by electron beam
Surface is surface-treated to eliminate residual charge, for solving the above problems.
In order to achieve the above objectives, the present invention provides a kind of method for eliminating defect caused by electronics beam scanning, comprising:
A wafer is provided, the wafer carried out first time electron beam scanning process；
Process of surface treatment is carried out to by the wafer of first time electron beam scanning process, until the wafer table will be located at
The residual charge in face is eliminated.
Preferably, the process of surface treatment the following steps are included:
Step 1: second of electronics beam scanning work is carried out to the wafer for carrying out first time electron beam scanning process
Skill, the electron beam that the electron beam potential that middle scan pattern uses is used with scan pattern in the first time electron beam scanning process
Opposite in potential；
Step 2: the wafer that step 1 is formed is rested in vacuum cavity；
Step 3: the cleaning process and/or heat treatment process of solion are carried out to the wafer that step 2 is formed.
Preferably, the time rested in vacuum cavity in step 2 is the first time electronics beam scanning defect time
0.5~2 times.
Preferably, the intracorporal air pressure of vacuum chamber is less than or equal to 0.5 atmospheric pressure.
Preferably, the solion includes NH4The aqueous solution or HCL aqueous solution or H of OH2SO4Aqueous solution.
Preferably, the concentration range in the solion is 0.5wt%~10wt%.
Preferably, the temperature of the heat treatment process is 100 DEG C~800 DEG C.
Preferably, the time of the heat treatment process is in 60s~1200s.
Compared with prior art, the present invention provides a kind of method for eliminating defect caused by electronics beam scanning, provides a crystalline substance
Circle, the wafer carried out first time electron beam scanning process；It is formed to after the wafer of first time electron beam scanning process
The wafer carry out process of surface treatment, until will be located at the crystal column surface residual charge eliminate, specifically, this table
Surface treatment technique includes that wafer is carried out to second of electronics beam scanning, is put into vacuum cavity standing, then carries out hot place to wafer
Reason and at least one for clean to crystal column surface both techniques using solion.It can make wafer using the above method
The residual charge on surface is eliminated or carries out charge ordered arrangement again, simple and convenient without destroying the structure of wafer, can have
Effect improves the yield of wafer.
Detailed description of the invention
Fig. 1 is the stereoscan photograph of crystal column surface photoresist deformation in the prior art；
Fig. 2 is the stereoscan photograph that crystal column surface photoresist peels off in the prior art；
Fig. 3 is that crystal column surface generates residual charge schematic diagram in an embodiment provided by the invention；
Fig. 4 is to eliminate residual charge schematic diagram using solion cleaning process in an embodiment provided by the invention；
Fig. 5 is to make residual charge be transformed into stable charging using heat treatment process in an embodiment provided by the invention to illustrate
Figure.
- Fig. 2: 01- photoresist of Fig. 1；
- Fig. 5: 100- wafer of Fig. 3,200- residual charge, 300- solion.
Specific embodiment
In order to make the foregoing objectives, features and advantages of the present invention clearer and more comprehensible, with reference to the accompanying drawing to the present invention
Specific embodiment be described in detail.
In the present embodiment, the wafer 100 refers mainly to the semiconductor substrate for not carrying out photoetching process.To above-mentioned wafer
100 carry out first time electronics beam scanning, which is conventional Defect Scanning, i.e., are for detecting on wafer 100
No existing defects.
Referring to figure 3., after first time electronics beam scanning, 100 surface of wafer is often made to produce residual charge
200, the presence meeting of the residual charge 200 so that it is subsequent carry out photoetching process on wafer 100 after, between photoresist and wafer 100
Binding force be deteriorated so that photoresist peel off or deformation.
The method provided in this embodiment for eliminating defect caused by electronics beam scanning, specifically includes the following steps:
Step 1: second of electron beam is carried out to the wafer 100 for successively carrying out first time electron beam scanning process
Scanning process, the electron beam potential and the first time electron beam scanning process used in second of electron beam scanning process
The electron beam opposite in potential of middle use, the electron beam potential used in so-called scanning process refer to: the electricity that electronics beam scanning uses
Lotus is all negative electrical charge, but the selection of scan pattern is different, and it is then negative electricity that the charge for causing crystal column surface to escape, which is more than incident charge,
Gesture scan pattern, or on the contrary, evolution is less than incident charge, then be positive potential scan mode, for example first time electron beam is swept
It retouches technique and uses negative potential sweep mode, then second of electron beam scanning process uses positive potential scan pattern, if first
Secondary electron beam scanning process uses positive potential scan pattern, then second of electron beam scanning process uses negative potential sweep mould
Formula；
Step 2: the wafer 100 that step 1 is formed is rested in vacuum cavity, and the atmospheric pressure of vacuum cavity is 0.5
A atmospheric pressure, in 0.5~2 times that the time that vacuum cavity is stood is the first time electron beam scanning process time；
Step 3: the cleaning process and/or heat treatment process of solion 300 are carried out to the wafer 100 that step 2 is formed.
Specifically, please continue to refer to Fig. 3 and Fig. 4, there is the wafer of residual charge 200 using solion 300 to surface
100 are cleaned, and solion 300 includes sufficient positive and negative ion, such as NH4The aqueous solution or HCL aqueous solution of OH or
H2SO4Aqueous solution, wherein the concentration range of solion is 0.5wt%~10wt%.
Referring to figure 5., when carrying out heat treatment process to wafer, heat treatment temperature is between 100 DEG C~800 DEG C, when continuing
Between in 60s~1200s, after wafer 100 is heated, electronics in the material in wafer 100 is mobile active, so that with missing electricity
The substance of son forms the substance of neutral charge after attracting free electronics, and has in the substance of excess electron, extra electronics
It leaves the substance and also forms neutral charge, most of the material on 100 surface of wafer reverts to neutral charge since then, to make crystalline substance
The metastable structure of 100 surface molecule structures of circle is restored to stable state.
It can be arranged in pairs or groups use using 300 cleaning process of solion and heat treatment process, it sequentially can be in any permutation.
It is above-mentioned by carried out surface treatment after wafer 100 on carry out photoetching process, it is possible to reduce photoresist peel off or
The probability of deformation, and above-mentioned simple process are time saving and energy saving.
Above-described embodiment is described in the present invention, but the present invention is not limited only to above-described embodiment.Obvious this field
Technical staff can carry out various modification and variations without departing from the spirit and scope of the present invention to invention.If in this way, this hair
These bright modifications and variations within the scope of the claims of the present invention and its equivalent technology, then the invention is also intended to include
Including these modification and variations.
Claims (7)
1. a kind of method for eliminating defect caused by electronics beam scanning characterized by comprising
A wafer is provided, the wafer carried out first time electron beam scanning process；
Process of surface treatment is carried out to by the wafer of first time electron beam scanning process, until the crystal column surface will be located at
Residual charge eliminate, the process of surface treatment the following steps are included:
Step 1: second of electron beam scanning process, institute are carried out to the wafer for carrying out first time electron beam scanning process
It states in the electron beam potential and the first time electron beam scanning process that scan pattern in second of electron beam scanning process uses
The electron beam opposite in potential that scan pattern uses；
Step 2: the wafer that step 1 is formed is rested in vacuum cavity；
Step 3: the cleaning process and/or heat treatment process of solion are carried out to the wafer that step 2 is formed.
2. eliminating the method for defect caused by electronics beam scanning as described in claim 1, which is characterized in that stood in step 2
Time in vacuum cavity is 0.5~2 times of first time electron beam scanning process time.
3. eliminating the method for defect caused by electronics beam scanning as described in claim 1, which is characterized in that the vacuum cavity
Interior air pressure is less than or equal to 0.5 atmospheric pressure.
4. eliminating the method for defect caused by electronics beam scanning as described in claim 1, which is characterized in that the solion
Including NH4The aqueous solution or HCL aqueous solution or H of OH2SO4Aqueous solution.
5. eliminating the method for defect caused by electronics beam scanning as claimed in claim 4, which is characterized in that the solion
In concentration range be 0.5wt%~10wt%.
6. eliminating the method for defect caused by electronics beam scanning as described in claim 1, which is characterized in that the heat treatment work
The temperature of skill is 100 DEG C~800 DEG C.
7. eliminating the method for defect caused by electronics beam scanning as claimed in claim 6, which is characterized in that the heat treatment work
The time of skill is in 60s~1200s.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201611087812.XA CN106449385B (en) | 2016-11-30 | 2016-11-30 | The method for eliminating defect caused by electronics beam scanning |
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| CN201611087812.XA CN106449385B (en) | 2016-11-30 | 2016-11-30 | The method for eliminating defect caused by electronics beam scanning |
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| CN106449385A CN106449385A (en) | 2017-02-22 |
| CN106449385B true CN106449385B (en) | 2019-05-31 |
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101356635A (en) * | 2006-01-31 | 2009-01-28 | 株式会社拓普康 | Apparatus and method for measuring semiconductor |
| CN104157590A (en) * | 2014-08-21 | 2014-11-19 | 上海华力微电子有限公司 | Electron beam defect scanning apparatus and method |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101102324B1 (en) * | 2008-11-26 | 2012-01-03 | 김용환 | Methods for neutralization of electron beam charge irradiated from an electron beam source |
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101356635A (en) * | 2006-01-31 | 2009-01-28 | 株式会社拓普康 | Apparatus and method for measuring semiconductor |
| CN104157590A (en) * | 2014-08-21 | 2014-11-19 | 上海华力微电子有限公司 | Electron beam defect scanning apparatus and method |
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