CN106448599B - Forward and reverse scanning gate driving circuit - Google Patents
Forward and reverse scanning gate driving circuit Download PDFInfo
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- CN106448599B CN106448599B CN201610938135.1A CN201610938135A CN106448599B CN 106448599 B CN106448599 B CN 106448599B CN 201610938135 A CN201610938135 A CN 201610938135A CN 106448599 B CN106448599 B CN 106448599B
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
- G09G3/36—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using liquid crystals
- G09G3/3611—Control of matrices with row and column drivers
- G09G3/3674—Details of drivers for scan electrodes
- G09G3/3677—Details of drivers for scan electrodes suitable for active matrices only
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- Crystallography & Structural Chemistry (AREA)
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Abstract
The invention discloses a kind of forward and reverse scanning gate driving circuits, it is characterized in that, including positive preliminary filling module, reversed preliminary filling module, pull-up module, gated sweep signal maintenance module, positive maintenance module, reversed maintenance module, auxiliary maintenance module and bootstrap capacitor；Wherein the tie point of positive preliminary filling module, reversed preliminary filling module, pull-up module, positive maintenance module, reversed maintenance module, auxiliary maintenance module and bootstrap capacitor is pull-up control node；The tie point of pull-up module, gated sweep signal maintenance module and bootstrap capacitor is gated sweep signal；Gated sweep signal maintenance module, positive maintenance module, reversed maintenance module, auxiliary maintenance module are also attached to a constant pressure low potential.The circuit preliminary filling module and drop-down empty module symmetry design, and forward and reverse scanning may be implemented.
Description
Technical field
The present invention relates to a kind of gate driving circuits, and in particular to a kind of gate driving electricity with forward and reverse scanning function
Road.
Background technique
In some special applications, liquid crystal display needs to have the function of forward and reverse scanning, such as mobile phone
The display picture of screen can normally place display, it is also desirable to display can be inverted, then this requires gated sweep driving circuits
Both top-down scanning can be carried out, also wants that scanning from bottom to top can be carried out.
It is the gated sweep driving circuit design that current product design uses as shown in Figure 1, which can not carry out reversely
Scanning, mainly there is following reason:
First is that pull-up control node maintenance module be controlled using previous clock signal CKm-1, if into
The current potential that control node is pulled up when row reverse scan can not be maintained；
Second is that the drop-down of pull-up control node, which empties module M9, to be controlled by Gn+3 signal, it is not right with preliminary filling module M1
Claim, if carried out when reverse scan, circuit can not normal operating.
Summary of the invention
Goal of the invention: in view of the deficiencies of the prior art, the invention discloses a kind of grids with forward and reverse scanning function
Driving circuit.
Technical solution: a kind of forward and reverse scanning gate driving circuit includes positive preliminary filling module (01), reversed preliminary filling module
(02), pull-up module (03), gated sweep signal maintenance module (04), positive maintenance module (05), reversed maintenance module (06),
Assist maintenance module (07) and bootstrap capacitor (C1)；
Wherein positive preliminary filling module (01), reversed preliminary filling module (02), pull-up module (03), positive maintenance module (05),
The tie point of reversed maintenance module (06), auxiliary maintenance module (07) and bootstrap capacitor (C1) is pull-up control node (netAn)；
The tie point of pull-up module (03), gated sweep signal maintenance module (04) and bootstrap capacitor (C1) is gated sweep signal
(Gn)；Gated sweep signal maintenance module (04), positive maintenance module (05), reversed maintenance module (06), auxiliary maintenance module
(07) it is also attached to a constant pressure low potential (VSS).
Positive preliminary filling module (01) is preliminary filling module in forward scan, and when reverse scan serves as pull-up control node
The drop-down of netAn empties module；Reversed preliminary filling module (02) is preliminary filling module in reverse scan, and when forward scan serves as pull-up
The drop-down of control node netAn empties module；Pull-up module (03) is mainly responsible for output gated sweep signal Gn；Gated sweep
Signal maintenance module (04), which is mainly responsible for, maintains gated sweep signal Gn low potential；Positive maintenance module (05) is responsible for forward scan
When maintain pull-up control node netAn current potential；Reversed maintenance module (06) is responsible for maintaining pull-up control node when reverse scan
The current potential of netAn；Auxiliary maintenance module (07) is that positive maintenance module (05) and reversed maintenance module (06) is assisted to control pull-up
The current potential of node netAn processed is maintained；Bootstrap capacitor (C1), primarily to the current potential of lifting netAn point；U2D and D2U are
The control signal of forward and reverse scanning, U2D is positive pressure high potential when forward scan, and D2U is negative pressure low potential；U2D when reverse scan
It is negative pressure low potential, D2U is positive pressure high potential.
The specific connection type of forward and reverse scanning gate driving circuit are as follows: positive preliminary filling module (01) includes the first film crystalline substance
Body pipe (M1), the gated sweep signal (Gn-2) of the grid connection prime of first film transistor (M1), source electrode connection forward direction are swept
Control signal (U2D) is retouched, drain electrode is connected to pull-up control node (netAn)；
Reversed preliminary filling module (02) includes the 9th thin film transistor (TFT) (M9), after the grid connection of the 9th thin film transistor (TFT) (M9)
The gated sweep signal (Gn+2) of grade, source electrode connect reverse scan control signal (D2U), and drain electrode is connected to pull-up control node
(netAn)；
Pull-up module (03) includes the tenth thin film transistor (TFT) (M10), and the grid of the tenth thin film transistor (TFT) (M10) is connected to
It draws control node (netAn), source electrode connects m clock signal (CKm), drain electrode output gated sweep signal (Gn)；
Gated sweep signal maintenance module (04) includes the 11st thin film transistor (TFT) (M11), the 11st thin film transistor (TFT)
(M11) grid connects m+2 clock signal (CKm+2), and source electrode is connected to gated sweep signal (Gn), and drain electrode connection constant pressure is low
Current potential (VSS)；
Positive maintenance module (05) includes positive maintenance first film transistor (M5), and forward direction maintains the second thin film transistor (TFT)
(M6), positive to maintain third thin film transistor (TFT) (M6A), forward direction maintains the 4th thin film transistor (TFT) (M8)；It is wherein positive to maintain first
Grid connection forward scan control signal (U2D) of thin film transistor (TFT) (M5), source electrode connect m-1 clock signal (CKm-1), leakage
Pole and the positive source electrode for maintaining the second thin film transistor (TFT) (M6), the positive source electrode and forward direction for maintaining third thin film transistor (TFT) (M6A)
The grid of the 4th thin film transistor (TFT) (M8) is maintained to connect；Forward direction maintains the grid of the second thin film transistor (TFT) (M6) to be connected to pull-up control
Node (netAn) processed, drain electrode connection constant pressure low potential (VSS)；Forward direction maintains the grid of third thin film transistor (TFT) (M6A) to be connected to
The gated sweep signal (Gn-2) of prime, drain electrode connection constant pressure low potential (VSS)；Forward direction maintains the 4th thin film transistor (TFT) (M8)
Source electrode is connected to pull-up control node (netAn), drain electrode connection constant pressure low potential (VSS)；
Reversed maintenance module (06) includes reversed maintenance first film transistor (M5A), reversed to maintain the second film crystal
It manages (M6C), it is reversed to maintain third thin film transistor (TFT) (M6C), it is reversed to maintain the 4th thin film transistor (TFT) (M8B)；It is wherein reversed to maintain
Grid connection reverse scan control signal (D2U) of first film transistor (M5A), source electrode connect m+1 clock signal (CKm+
1) it, drains and the reversed source electrode for maintaining the second thin film transistor (TFT) (M6C), the reversed source electrode for maintaining third thin film transistor (TFT) (M6B)
It is connected with the reversed grid for maintaining the 4th thin film transistor (TFT) (M8B)；The reversed grid connection for maintaining the second thin film transistor (TFT) (M6C)
To pull-up control node (netAn), drain electrode connection constant pressure low potential (VSS)；The reversed grid for maintaining third thin film transistor (TFT) (M6B)
Pole is connected to the gated sweep signal (Gn+2) of rear class, drain electrode connection constant pressure low potential (VSS)；It is reversed to maintain the 4th film crystal
The source electrode of pipe (M8B) is connected to pull-up control node (netAn), drain electrode connection constant pressure low potential (VSS)；
Assisting maintenance module (07) includes that positive auxiliary maintains thin film transistor (TFT) (M4A) and reversed auxiliary to maintain film crystal
It manages (M4B), forward direction auxiliary maintains the grid of thin film transistor (TFT) (M4A) to connect forward scan enabling signal (GSP1), source electrode connection
To pull-up control node (netAn), drain electrode is connected to constant pressure low potential (VSS)；Reversed auxiliary maintains thin film transistor (TFT) (M4B)
Grid connects reverse scan enabling signal (GSP2), and source electrode is connected to pull-up control node (netAn), and it is low that drain electrode is connected to constant pressure
Current potential (VSS)；
Bootstrap capacitor (C1) connects grid and the drain electrode of the tenth thin film transistor (TFT) (M10).
Another connection type of forward and reverse scanning gate driving circuit are as follows: positive preliminary filling module (01) includes the first film
Transistor (M1), the gated sweep signal (Gn-2) of the grid connection prime of first film transistor (M1), source electrode connection are positive
Scan control signal (U2D), drain electrode are connected to pull-up control node (netAn)；
Reversed preliminary filling module (02) includes the 9th thin film transistor (TFT) (M9), after the grid connection of the 9th thin film transistor (TFT) (M9)
The gated sweep signal (Gn+2) of grade, source electrode connect reverse scan control signal (D2U), and drain electrode is connected to pull-up control node
(netAn)；
Pull-up module (03) includes the tenth thin film transistor (TFT) (M10), and the grid of the tenth thin film transistor (TFT) (M10) is connected to
It draws control node (netAn), source electrode connects m clock signal (CKm), drain electrode output gated sweep signal (Gn)；
Gated sweep signal maintenance module (04) includes the 11st thin film transistor (TFT) (M11), the 11st thin film transistor (TFT)
(M11) grid connects m+2 clock signal (CKm+2), and source electrode is connected to gated sweep signal (Gn), and drain electrode connection constant pressure is low
Current potential (VSS)；
Positive maintenance module (05) includes positive maintenance first film transistor (M5), and forward direction maintains the second thin film transistor (TFT)
(M6), positive to maintain third thin film transistor (TFT) (M6A), forward direction maintains the 4th thin film transistor (TFT) (M8), and forward direction maintains electric discharge film
Transistor (M7)；Wherein positive source electrode connection forward scan control signal (U2D) for maintaining first film transistor (M5), grid
It connects m-1 clock signal (CKm-1), drain electrode maintains third with the positive source electrode for maintaining the second thin film transistor (TFT) (M6), forward direction
The source electrode of thin film transistor (TFT) (M6A), the positive grid for maintaining the 4th thin film transistor (TFT) (M8) and forward direction maintain the film crystal that discharges
Manage the source electrode connection of (M7)；Forward direction maintains the grid of the second thin film transistor (TFT) (M6) to be connected to pull-up control node (netAn), leakage
Pole connects constant pressure low potential (VSS)；The gated sweep that forward direction maintains the grid of third thin film transistor (TFT) (M6A) to be connected to prime is believed
Number (Gn-2), drain electrode connection constant pressure low potential (VSS)；Forward direction maintains the source electrode of the 4th thin film transistor (TFT) (M8) to be connected to pull-up control
Node (netAn) processed, drain electrode connection constant pressure low potential (VSS), forward direction maintain the grid of electric discharge thin film transistor (TFT) (M7) to connect m
+ 1 clock signal (CKm+1), drain electrode connection constant pressure low potential (VSS)；
Reversed maintenance module (06) includes reversed maintenance first film transistor (M5A), reversed to maintain the second film crystal
It manages (M6C), reversed to maintain third thin film transistor (TFT) (M6C), the 4th thin film transistor (TFT) (M8B) of reversed maintenance is reversed to maintain electric discharge
Thin film transistor (TFT) (M7A)；The source electrode connection reverse scan of first film transistor (M5A) is wherein reversely maintained to control signal
(D2U), grid connects m+1 clock signal (CKm+1), drains with the reversed source electrode for maintaining the second thin film transistor (TFT) (M6C), instead
To maintaining the source electrode of third thin film transistor (TFT) (M6B), the reversed source electrode for maintaining electric discharge thin film transistor (TFT) (M7A) and reversed maintain the
The grid of four thin film transistor (TFT)s (M8B) connects；The reversed grid for maintaining the second thin film transistor (TFT) (M6C) is connected to pull-up control section
Point (netAn), drain electrode connection constant pressure low potential (VSS)；The reversed grid for maintaining third thin film transistor (TFT) (M6B) is connected to rear class
Gated sweep signal (Gn+2), drain electrode connection constant pressure low potential (VSS)；The reversed source for maintaining the 4th thin film transistor (TFT) (M8B)
Pole is connected to pull-up control node (netAn), and drain electrode connection constant pressure low potential (VSS) is reversed to maintain electric discharge thin film transistor (TFT)
(M7A) grid connects m-1 clock signal (CKm-1), drain electrode connection constant pressure low potential (VSS)；
Assisting maintenance module (07) includes that positive auxiliary maintains thin film transistor (TFT) (M4A) and reversed auxiliary to maintain film crystal
It manages (M4B), forward direction auxiliary maintains the grid of thin film transistor (TFT) (M4A) to connect forward scan enabling signal (GSP1), source electrode connection
To pull-up control node (netAn), drain electrode is connected to constant pressure low potential (VSS)；Reversed auxiliary maintains thin film transistor (TFT) (M4B)
Grid connects reverse scan enabling signal (GSP2), and source electrode is connected to pull-up control node (netAn), and it is low that drain electrode is connected to constant pressure
Current potential (VSS)；
Bootstrap capacitor (C1) connects grid and the drain electrode of the tenth thin film transistor (TFT) (M10).
It is emptied to carry out charge to circuit internal node in every frame end and switching on and shutting down, above-mentioned forward and reverse raster
Pole driving circuit further includes emptying resetting module (08), empties resetting module (08) and is controlled by emptying reset control signal (CLR),
It is connect with pull-up control node (netAn), constant pressure low potential (VSS), positive maintenance module (05) and reversed maintenance module (06)；
It empties resetting module (08) and includes the second thin film transistor (TFT) (M2), the 12nd thin film transistor (TFT) (M12), forward direction empties resetting film
Transistor (M3) and reversed empty reset thin film transistor (TFT) (M3A)；Second thin film transistor (TFT) (M2), the 12nd thin film transistor (TFT)
(M12), forward direction empties resetting thin film transistor (TFT) (M3) and the reversed grid for emptying resetting thin film transistor (TFT) (M3A) is all connected with and empties
Reset control signal (CLR), drain electrode are connected to constant pressure low potential (VSS)；The source electrode of second thin film transistor (TFT) (M2) is connected to
It pulls up control node (netAn), the source electrode of the 12nd thin film transistor (TFT) (M12) connects gated sweep signal (Gn), and forward direction empties
The positive drain electrode for maintaining first film transistor (M5) of source electrode connection for resetting thin film transistor (TFT) (M3), reversely empties resetting film
The reversed drain electrode for maintaining first film transistor (M5A) of source electrode connection of transistor (M3A).
The utility model has the advantages that compared with prior art, forward and reverse scanning gate driving circuit disclosed by the invention has following excellent
Point: 1, the circuit preliminary filling module and drop-down empty module symmetry design, pull-up when positive preliminary filling module can be used as reverse scan
The drop-down of control node empties module, and the drop-down that control node is pulled up when reversed preliminary filling module can be used as forward scan empties mould
Forward and reverse scanning may be implemented in block；2, it is individually designed two pull-up control node maintenance module, one in forward scan into
Row maintains, another is maintained in reverse scan, in conjunction with auxiliary maintenance module, can maintain pull-up control node well
Current potential.
Detailed description of the invention
Fig. 1 is the gated sweep driving circuit that existing product design uses；
Fig. 2 is the forward and reverse scanning gate driving circuit figure of embodiment 1；
Fig. 3 is the forward scan drive waveforms schematic diagram of the forward and reverse scanning gate driving circuit of embodiment 1；
Fig. 4 is the reverse scan drive waveforms schematic diagram of the forward and reverse scanning gate driving circuit of embodiment 1；
Fig. 5 is the forward and reverse scanning gate driving circuit figure of embodiment 2.
Specific embodiment
With reference to the accompanying drawings and detailed description, the present invention is furture elucidated.
Embodiment 1:
As shown in Fig. 2, a kind of forward and reverse scanning gate driving circuit, includes positive preliminary filling module (01), reversed pre- mold filling
Block (02), pull-up module (03), gated sweep signal maintenance module (04), positive maintenance module (05), reversed maintenance module
(06), it assists maintenance module (07), empty resetting module (08) and bootstrap capacitor (C1)；Wherein positive preliminary filling module (01), anti-
To preliminary filling module (02), pull-up module (03), positive maintenance module (05), reversed maintenance module (06), auxiliary maintenance module
(07) and the tie point of bootstrap capacitor (C1) is pull-up control node (netAn)；Pull-up module (03), gated sweep signal maintain
The tie point of module (04) and bootstrap capacitor (C1) is gated sweep signal (Gn)；Gated sweep signal maintenance module (04), just
A constant pressure low potential (VSS) is also attached to maintenance module (05), reversed maintenance module (06), auxiliary maintenance module (07).
Positive preliminary filling module (01) is preliminary filling module in forward scan, and when reverse scan serves as pull-up control node
The drop-down of netAn empties module；Reversed preliminary filling module (02) is preliminary filling module in reverse scan, and when forward scan serves as pull-up
The drop-down of control node netAn empties module；Pull-up module (03) is mainly responsible for output gated sweep signal Gn；Gated sweep
Signal maintenance module (04), which is mainly responsible for, maintains gated sweep signal Gn low potential；Positive maintenance module (05) is responsible for forward scan
When maintain pull-up control node netAn current potential；Reversed maintenance module (06) is responsible for maintaining pull-up control node when reverse scan
The current potential of netAn；Auxiliary maintenance module (07) is that positive maintenance module (05) and reversed maintenance module (06) is assisted to control pull-up
The current potential of node netAn processed is maintained；Bootstrap capacitor (C1), primarily to the current potential of lifting netAn point；U2D and D2U are
The control signal of forward and reverse scanning, U2D is positive pressure high potential when forward scan, and D2U is negative pressure low potential, and 01 module is pre- mold filling
Block, 02 module are that drop-down empties module, and 05 module works normally, and 06 module is closed；U2D is negative pressure low potential when reverse scan,
D2U is positive pressure high potential, and 01 module is that drop-down empties module, and 02 module is preliminary filling module, and 05 module is closed, the normal work of 06 module
Make；It empties resetting module (08) to empty circuit internal node progress charge in every frame end and switching on and shutting down, by emptying weight
Set control signal (CLR) control, with pull-up control node (netAn), constant pressure low potential (VSS), positive maintenance module (05) and
Reversed maintenance module (06) connection；VSS is constant pressure low potential, is mainly responsible for and provides the low potential of gated sweep signal Gn.
The specific connection type of circuit in embodiment 1 are as follows: positive preliminary filling module (01) includes first film transistor (M1),
The gated sweep signal (Gn-2) of the grid connection prime of first film transistor (M1), source electrode connect forward scan and control signal
(U2D), drain electrode is connected to pull-up control node (netAn)；
Reversed preliminary filling module (02) includes the 9th thin film transistor (TFT) (M9), after the grid connection of the 9th thin film transistor (TFT) (M9)
The gated sweep signal (Gn+2) of grade, source electrode connect reverse scan control signal (D2U), and drain electrode is connected to pull-up control node
(netAn)；
Pull-up module (03) includes the tenth thin film transistor (TFT) (M10), and the grid of the tenth thin film transistor (TFT) (M10) is connected to
It draws control node (netAn), source electrode connects m clock signal (CKm), drain electrode output gated sweep signal (Gn)；
Gated sweep signal maintenance module (04) includes the 11st thin film transistor (TFT) (M11), the 11st thin film transistor (TFT)
(M11) grid connects m+2 clock signal (CKm+2), and source electrode is connected to gated sweep signal (Gn), and drain electrode connection constant pressure is low
Current potential (VSS)；
Positive maintenance module (05) includes positive maintenance first film transistor (M5), and forward direction maintains the second thin film transistor (TFT)
(M6), positive to maintain third thin film transistor (TFT) (M6A), forward direction maintains the 4th thin film transistor (TFT) (M8)；It is wherein positive to maintain first
Grid connection forward scan control signal (U2D) of thin film transistor (TFT) (M5), source electrode connect m-1 clock signal (CKm-1), leakage
Pole and the positive source electrode for maintaining the second thin film transistor (TFT) (M6), the positive source electrode and forward direction for maintaining third thin film transistor (TFT) (M6A)
The grid of the 4th thin film transistor (TFT) (M8) is maintained to connect, tie point netBn；Forward direction maintains the grid of the second thin film transistor (TFT) (M6)
Pole is connected to pull-up control node (netAn), drain electrode connection constant pressure low potential (VSS)；Forward direction maintains third thin film transistor (TFT)
(M6A) grid is connected to the gated sweep signal (Gn-2) of prime, drain electrode connection constant pressure low potential (VSS)；Forward direction maintains the
The source electrode of four thin film transistor (TFT)s (M8) is connected to pull-up control node (netAn), drain electrode connection constant pressure low potential (VSS)；
Reversed maintenance module (06) includes reversed maintenance first film transistor (M5A), reversed to maintain the second film crystal
It manages (M6C), it is reversed to maintain third thin film transistor (TFT) (M6C), it is reversed to maintain the 4th thin film transistor (TFT) (M8B)；It is wherein reversed to maintain
Grid connection reverse scan control signal (D2U) of first film transistor (M5A), source electrode connect m+1 clock signal (CKm+
1) it, drains and the reversed source electrode for maintaining the second thin film transistor (TFT) (M6C), the reversed source electrode for maintaining third thin film transistor (TFT) (M6B)
It is connected with the reversed grid for maintaining the 4th thin film transistor (TFT) (M8B), tie point netCn；It is reversed to maintain the second thin film transistor (TFT)
(M6C) grid is connected to pull-up control node (netAn), drain electrode connection constant pressure low potential (VSS)；It is reversed to maintain third film
The grid of transistor (M6B) is connected to the gated sweep signal (Gn+2) of rear class, drain electrode connection constant pressure low potential (VSS)；Reversely
The source electrode of the 4th thin film transistor (TFT) (M8B) is maintained to be connected to pull-up control node (netAn), drain electrode connection constant pressure low potential
(VSS)；
Thin film transistor (TFT) M5 and M5A can also can be reversed electric discharge with positive charge, so that netBn and netCn point will not one
Directly it is in high potential.
Assisting maintenance module (07) includes that positive auxiliary maintains thin film transistor (TFT) (M4A) and reversed auxiliary to maintain film crystal
It manages (M4B), forward direction auxiliary maintains the grid of thin film transistor (TFT) (M4A) to connect forward scan enabling signal (GSP1), source electrode connection
To pull-up control node (netAn), drain electrode is connected to constant pressure low potential (VSS)；Reversed auxiliary maintains thin film transistor (TFT) (M4B)
Grid connects reverse scan enabling signal (GSP2), and source electrode is connected to pull-up control node (netAn), and it is low that drain electrode is connected to constant pressure
Current potential (VSS)；
It empties resetting module (08) and includes the second thin film transistor (TFT) (M2), the 12nd thin film transistor (TFT) (M12), forward direction empties
Resetting thin film transistor (TFT) (M3) and reversed empty reset thin film transistor (TFT) (M3A)；Second thin film transistor (TFT) (M2), the 12nd film
Transistor (M12), forward direction empties resetting thin film transistor (TFT) (M3) and the reversed grid for emptying resetting thin film transistor (TFT) (M3A) connects
It connects and empties reset control signal (CLR), drain electrode is connected to constant pressure low potential (VSS)；The source electrode of second thin film transistor (TFT) (M2)
It is connected to pull-up control node (netAn), the source electrode of the 12nd thin film transistor (TFT) (M12) connects gated sweep signal (Gn), just
To the positive drain electrode for maintaining first film transistor (M5) of source electrode connection for emptying resetting thin film transistor (TFT) (M3), weight is reversely emptied
Set the reversed drain electrode for maintaining first film transistor (M5A) of source electrode connection of thin film transistor (TFT) (M3A)；
Bootstrap capacitor (C1) connects grid and the drain electrode of the tenth thin film transistor (TFT) (M10).
As shown in figure 3, being drive waveforms schematic diagram of the present embodiment circuit in forward scan.CK1, CK2 in figure, CK3,
CK4 is clock control signal, and when forward scan sequentially exports, and controls clock signal CKm-1, CKm, CKm+1 and CKm+2；It is positive
Gated sweep signal Gn-2, Gn, Gn+2 are sequentially exported from small to large when scanning.
As shown in figure 4, being drive waveforms schematic diagram of the present embodiment circuit in reverse scan.CK1, CK2 in figure, CK3,
CK4 is clock control signal, and inverted order exports when reverse scan, i.e., believes by the output sequential control clock of CK4, CK3, CK2, CK1
Number CKm-1, CKm, CKm+1 and CKm+2；Inverted order exports from big to small by gated sweep signal Gn+2, Gn, Gn-2 when reverse scan.
Embodiment 2:
The present embodiment the difference from embodiment 1 is that positive maintenance module (05) and reversed maintenance module (06) specific electricity
Road is different.As shown in figure 5, positive maintenance module (05) includes positive maintenance first film transistor (M5), just in the present embodiment
To the second thin film transistor (TFT) (M6) is maintained, forward direction maintains third thin film transistor (TFT) (M6A), and forward direction maintains the 4th thin film transistor (TFT)
(M8), positive to maintain electric discharge thin film transistor (TFT) (M7)；Wherein the positive source electrode for maintaining first film transistor (M5) connects positive
Scan control signal (U2D), grid connect m-1 clock signal (CKm-1), and drain electrode maintains the second thin film transistor (TFT) with positive
(M6) source electrode, the positive source electrode for maintaining third thin film transistor (TFT) (M6A), the positive grid for maintaining the 4th thin film transistor (TFT) (M8)
It is connected with the positive source electrode for maintaining electric discharge thin film transistor (TFT) (M7), tie point netBn；Forward direction maintains the second thin film transistor (TFT)
(M6) grid is connected to pull-up control node (netAn), drain electrode connection constant pressure low potential (VSS)；Forward direction maintains third film
The grid of transistor (M6A) is connected to the gated sweep signal (Gn-2) of prime, drain electrode connection constant pressure low potential (VSS)；It is positive
The source electrode of the 4th thin film transistor (TFT) (M8) is maintained to be connected to pull-up control node (netAn), drain electrode connection constant pressure low potential
(VSS), the positive grid for maintaining electric discharge thin film transistor (TFT) (M7) connects m+1 clock signal (CKm+1), and drain electrode connection constant pressure is low
Current potential (VSS)；
Reversed maintenance module (06) includes reversed maintenance first film transistor (M5A), reversed to maintain the second film crystal
It manages (M6C), reversed to maintain third thin film transistor (TFT) (M6C), the 4th thin film transistor (TFT) (M8B) of reversed maintenance is reversed to maintain electric discharge
Thin film transistor (TFT) (M7A)；The source electrode connection reverse scan of first film transistor (M5A) is wherein reversely maintained to control signal
(D2U), grid connects m+1 clock signal (CKm+1), drains with the reversed source electrode for maintaining the second thin film transistor (TFT) (M6C), instead
To maintaining the source electrode of third thin film transistor (TFT) (M6B), the reversed source electrode for maintaining electric discharge thin film transistor (TFT) (M7A) and reversed maintain the
The grid of four thin film transistor (TFT)s (M8B) connects, tie point netCn；The reversed grid for maintaining the second thin film transistor (TFT) (M6C) connects
It is connected to pull-up control node (netAn), drain electrode connection constant pressure low potential (VSS)；Reversed maintenance third thin film transistor (TFT) (M6B)
Grid is connected to the gated sweep signal (Gn+2) of rear class, drain electrode connection constant pressure low potential (VSS)；It is reversed to maintain the 4th film brilliant
The source electrode of body pipe (M8B) is connected to pull-up control node (netAn), and drain electrode connection constant pressure low potential (VSS) is reversed to maintain electric discharge
The grid of thin film transistor (TFT) (M7A) connects m-1 clock signal (CKm-1), drain electrode connection constant pressure low potential (VSS).
Wherein thin film transistor (TFT) M5 and M5A positive charge, M7 and M7A carry out back discharge, so that netBn and netCn point
High potential will not be constantly in.
Claims (3)
1. a kind of forward and reverse scanning gate driving circuit, which is characterized in that include positive preliminary filling module (01), reversed preliminary filling module
(02), pull-up module (03), gated sweep signal maintenance module (04), positive maintenance module (05), reversed maintenance module (06),
Assist maintenance module (07) and bootstrap capacitor (C1)；
Wherein positive preliminary filling module (01), reversed preliminary filling module (02), pull-up module (03), positive maintenance module (05), reversed
The tie point of maintenance module (06), auxiliary maintenance module (07) and bootstrap capacitor is pull-up control node (netAn)；Pull-up module
(03), the tie point of gated sweep signal maintenance module (04) and bootstrap capacitor is gated sweep signal (Gn)；Gated sweep letter
Number maintenance module (04), positive maintenance module (05), reversed maintenance module (06), that auxiliary maintenance module (07) is connected to constant pressure is low
Current potential (VSS)；The auxiliary maintenance module (07) includes that positive auxiliary maintains thin film transistor (TFT) (M4A) and reversed auxiliary to remain thin
Film transistor (M4B), the positive auxiliary maintain the grid of thin film transistor (TFT) (M4A) to connect forward scan enabling signal
(GSP1), source electrode is connected to pull-up control node (netAn), and drain electrode is connected to constant pressure low potential (VSS)；The reversed auxiliary dimension
Grid connection reverse scan enabling signal (GSP2) of thin film transistor (TFT) (M4B) is held, source electrode is connected to pull-up control node
(netAn), drain electrode is connected to constant pressure low potential (VSS)；
The forward direction preliminary filling module (01) includes first film transistor (M1), before the grid connection of first film transistor (M1)
The gated sweep signal (Gn-2) of grade, source electrode connect forward scan control signal (U2D), and drain electrode is connected to pull-up control node
(netAn)；
The reversed preliminary filling module (02) includes the 9th thin film transistor (TFT) (M9), after the grid connection of the 9th thin film transistor (TFT) (M9)
The gated sweep signal (Gn+2) of grade, source electrode connect reverse scan control signal (D2U), and drain electrode is connected to pull-up control node
(netAn)；
The pull-up module (03) includes the tenth thin film transistor (TFT) (M10), and the grid of the tenth thin film transistor (TFT) (M10) is connected to
It draws control node (netAn), source electrode connects m clock signal (CKm), drain electrode output gated sweep signal (Gn)；
The gated sweep signal maintenance module (04) includes the 11st thin film transistor (TFT) (M11), the 11st thin film transistor (TFT)
(M11) grid connects m+2 clock signal (CKm+2), and source electrode is connected to gated sweep signal (Gn), and drain electrode connection constant pressure is low
Current potential (VSS)；
The forward direction maintenance module (05) includes positive maintenance first film transistor (M5), and forward direction maintains the second thin film transistor (TFT)
(M6), positive to maintain third thin film transistor (TFT) (M6A), forward direction maintains the 4th thin film transistor (TFT) (M8)；It is wherein positive to maintain first
Grid connection forward scan control signal (U2D) of thin film transistor (TFT) (M5), source electrode connect m-1 clock signal (CKm-1), leakage
Pole and the positive source electrode for maintaining the second thin film transistor (TFT) (M6), the positive source electrode and forward direction for maintaining third thin film transistor (TFT) (M6A)
The grid of the 4th thin film transistor (TFT) (M8) is maintained to connect；Forward direction maintains the grid of the second thin film transistor (TFT) (M6) to be connected to pull-up control
Node (netAn) processed, drain electrode connection constant pressure low potential (VSS)；Forward direction maintains the grid of third thin film transistor (TFT) (M6A) to be connected to
The gated sweep signal (Gn-2) of prime, drain electrode connection constant pressure low potential (VSS)；Forward direction maintains the 4th thin film transistor (TFT) (M8)
Source electrode is connected to pull-up control node (netAn), drain electrode connection constant pressure low potential (VSS)；
The reversed maintenance module (06) includes reversed maintenance first film transistor (M5A), reversed to maintain the second film crystal
It manages (M6C), it is reversed to maintain third thin film transistor (TFT) (M6C), it is reversed to maintain the 4th thin film transistor (TFT) (M8B)；It is wherein reversed to maintain
Grid connection reverse scan control signal (D2U) of first film transistor (M5A), source electrode connect m+1 clock signal (CKm+
1) it, drains and the reversed source electrode for maintaining the second thin film transistor (TFT) (M6C), the reversed source electrode for maintaining third thin film transistor (TFT) (M6B)
It is connected with the reversed grid for maintaining the 4th thin film transistor (TFT) (M8B)；The reversed grid connection for maintaining the second thin film transistor (TFT) (M6C)
To pull-up control node (netAn), drain electrode connection constant pressure low potential (VSS)；The reversed grid for maintaining third thin film transistor (TFT) (M6B)
Pole is connected to the gated sweep signal (Gn+2) of rear class, drain electrode connection constant pressure low potential (VSS)；It is reversed to maintain the 4th film crystal
The source electrode of pipe (M8B) is connected to pull-up control node (netAn), drain electrode connection constant pressure low potential (VSS)；
The bootstrap capacitor (C1) connects grid and the drain electrode of the tenth thin film transistor (TFT) (M10).
2. forward and reverse scanning gate driving circuit according to claim 1, which is characterized in that the forward direction preliminary filling module
It (01) include first film transistor (M1), the gated sweep signal (Gn- of the grid connection prime of first film transistor (M1)
2), source electrode connection forward scan control signal (U2D), drain electrode are connected to pull-up control node (netAn)；
The reversed preliminary filling module (02) includes the 9th thin film transistor (TFT) (M9), after the grid connection of the 9th thin film transistor (TFT) (M9)
The gated sweep signal (Gn+2) of grade, source electrode connect reverse scan control signal (D2U), and drain electrode is connected to pull-up control node
(netAn)；
The pull-up module (03) includes the tenth thin film transistor (TFT) (M10), and the grid of the tenth thin film transistor (TFT) (M10) is connected to
It draws control node (netAn), source electrode connects m clock signal (CKm), drain electrode output gated sweep signal (Gn)；
The gated sweep signal maintenance module (04) includes the 11st thin film transistor (TFT) (M11), the 11st thin film transistor (TFT)
(M11) grid connects m+2 clock signal (CKm+2), and source electrode is connected to gated sweep signal (Gn), and drain electrode connection constant pressure is low
Current potential (VSS)；
The forward direction maintenance module (05) includes positive maintenance first film transistor (M5), and forward direction maintains the second thin film transistor (TFT)
(M6), positive to maintain third thin film transistor (TFT) (M6A), forward direction maintains the 4th thin film transistor (TFT) (M8), and forward direction maintains electric discharge film
Transistor (M7)；Wherein positive source electrode connection forward scan control signal (U2D) for maintaining first film transistor (M5), grid
It connects m-1 clock signal (CKm-1), drain electrode maintains third with the positive source electrode for maintaining the second thin film transistor (TFT) (M6), forward direction
The source electrode of thin film transistor (TFT) (M6A), the positive grid for maintaining the 4th thin film transistor (TFT) (M8) and forward direction maintain the film crystal that discharges
Manage the source electrode connection of (M7)；Forward direction maintains the grid of the second thin film transistor (TFT) (M6) to be connected to pull-up control node (netAn), leakage
Pole connects constant pressure low potential (VSS)；The gated sweep that forward direction maintains the grid of third thin film transistor (TFT) (M6A) to be connected to prime is believed
Number (Gn-2), drain electrode connection constant pressure low potential (VSS)；Forward direction maintains the source electrode of the 4th thin film transistor (TFT) (M8) to be connected to pull-up control
Node (netAn) processed, drain electrode connection constant pressure low potential (VSS), forward direction maintain the grid of electric discharge thin film transistor (TFT) (M7) to connect m
+ 1 clock signal (CKm+1), drain electrode connection constant pressure low potential (VSS)；
The reversed maintenance module (06) includes reversed maintenance first film transistor (M5A), reversed to maintain the second film crystal
It manages (M6C), reversed to maintain third thin film transistor (TFT) (M6C), the 4th thin film transistor (TFT) (M8B) of reversed maintenance is reversed to maintain electric discharge
Thin film transistor (TFT) (M7A)；The source electrode connection reverse scan of first film transistor (M5A) is wherein reversely maintained to control signal
(D2U), grid connects m+1 clock signal (CKm+1), drains with the reversed source electrode for maintaining the second thin film transistor (TFT) (M6C), instead
To maintaining the source electrode of third thin film transistor (TFT) (M6B), the reversed source electrode for maintaining electric discharge thin film transistor (TFT) (M7A) and reversed maintain the
The grid of four thin film transistor (TFT)s (M8B) connects；The reversed grid for maintaining the second thin film transistor (TFT) (M6C) is connected to pull-up control section
Point (netAn), drain electrode connection constant pressure low potential (VSS)；The reversed grid for maintaining third thin film transistor (TFT) (M6B) is connected to rear class
Gated sweep signal (Gn+2), drain electrode connection constant pressure low potential (VSS)；The reversed source for maintaining the 4th thin film transistor (TFT) (M8B)
Pole is connected to pull-up control node (netAn), and drain electrode connection constant pressure low potential (VSS) is reversed to maintain electric discharge thin film transistor (TFT)
(M7A) grid connects m-1 clock signal (CKm-1), drain electrode connection constant pressure low potential (VSS)；
The bootstrap capacitor (C1) connects grid and the drain electrode of the tenth thin film transistor (TFT) (M10).
3. according to claim 1 or 2 described in any item forward and reverse scanning gate driving circuits, which is characterized in that further include clear
Bare weight is set module (08), it is described empty resetting module (08) include the second thin film transistor (TFT) (M2), the 12nd thin film transistor (TFT)
(M12), forward direction empties resetting thin film transistor (TFT) (M3) and reversely empties resetting thin film transistor (TFT) (M3A)；Second film is brilliant
Body pipe (M2), the 12nd thin film transistor (TFT) (M12), forward direction empty resetting thin film transistor (TFT) (M3) and reversely empty resetting film crystalline substance
The grid of body pipe (M3A), which is all connected with, to be emptied reset control signal (CLR), and drain electrode is connected to constant pressure low potential (VSS)；
The source electrode of second thin film transistor (TFT) (M2) is connected to pull-up control node (netAn), the 12nd thin film transistor (TFT)
(M12) source electrode connects gated sweep signal (Gn), and forward direction empties the positive maintenance of source electrode connection of resetting thin film transistor (TFT) (M3)
The drain electrode of first film transistor (M5), the reversed maintenance first of source electrode connection for reversely emptying resetting thin film transistor (TFT) (M3A) are thin
The drain electrode of film transistor (M5A).
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| CN107591135B (en) * | 2017-08-25 | 2019-07-12 | 南京中电熊猫平板显示科技有限公司 | A kind of gated sweep driving circuit and liquid crystal display device |
| CN108154856B (en) * | 2017-12-27 | 2020-10-02 | 南京中电熊猫液晶显示科技有限公司 | Grid scanning driving circuit |
| CN112071256B (en) * | 2020-09-29 | 2022-06-14 | 南京中电熊猫液晶显示科技有限公司 | Grid scanning driving circuit |
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| KR101272337B1 (en) * | 2006-09-01 | 2013-06-07 | 삼성디스플레이 주식회사 | Display device capable of displaying partial picture and driving method of the same |
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| KR101773136B1 (en) * | 2010-12-24 | 2017-08-31 | 삼성디스플레이 주식회사 | Gate driving circuit and display device having the gate driving circuit |
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| CN104376824A (en) * | 2014-11-13 | 2015-02-25 | 深圳市华星光电技术有限公司 | GOA circuit for liquid crystal display and liquid crystal display device |
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