CN106444190A - COA substrate and manufacturing method thereof and liquid crystal display panel - Google Patents
COA substrate and manufacturing method thereof and liquid crystal display panel Download PDFInfo
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- CN106444190A CN106444190A CN201610933807.XA CN201610933807A CN106444190A CN 106444190 A CN106444190 A CN 106444190A CN 201610933807 A CN201610933807 A CN 201610933807A CN 106444190 A CN106444190 A CN 106444190A
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- 239000000758 substrate Substances 0.000 title claims abstract description 39
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 18
- 239000004973 liquid crystal related substance Substances 0.000 title claims abstract description 14
- 238000002161 passivation Methods 0.000 claims abstract description 90
- 239000002184 metal Substances 0.000 claims abstract description 41
- 229910052751 metal Inorganic materials 0.000 claims abstract description 41
- 230000000903 blocking effect Effects 0.000 claims description 46
- 238000000034 method Methods 0.000 claims description 45
- 239000012212 insulator Substances 0.000 claims description 14
- 238000005229 chemical vapour deposition Methods 0.000 claims description 11
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 5
- 238000000151 deposition Methods 0.000 claims description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 5
- 230000015572 biosynthetic process Effects 0.000 claims description 4
- 230000008021 deposition Effects 0.000 claims description 4
- 239000011248 coating agent Substances 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 3
- 238000011161 development Methods 0.000 claims description 3
- 238000005530 etching Methods 0.000 claims description 3
- 238000003384 imaging method Methods 0.000 claims description 3
- 239000000203 mixture Substances 0.000 claims description 3
- 238000009413 insulation Methods 0.000 abstract 1
- 238000013461 design Methods 0.000 description 4
- 229910004205 SiNX Inorganic materials 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 238000012797 qualification Methods 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 230000002159 abnormal effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 210000002858 crystal cell Anatomy 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000005357 flat glass Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000009499 grossing Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000010079 rubber tapping Methods 0.000 description 1
- 238000005549 size reduction Methods 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136227—Through-hole connection of the pixel electrode to the active element through an insulation layer
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Liquid Crystal (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Thin Film Transistor (AREA)
Abstract
The invention provides a COA substrate. A gate metal layer, a gate insulation layer, an active layer, a source and drain metal layer and a source and drain electrode are formed on a substrate body, and a first passivation layer is formed on the source and drain metal layer; a color resistance layer is deposited on the first passivation layer, the first passivation layer and the color resistance layer are provided with first through holes and second through holes respectively, and a second passivation layer is formed on the color resistance layer and provided with third through holes above the second through holes; the diameter of the third through holes is larger than the diameter of the first through holes, so that a staggered area is formed between the first passivation layer and the second passivation layer; the first through holes, the second through holes and the third through holes form communicating holes, and transparent conducting layers are arranged on the second passivation layer, the communicating holes and the exposed source and drain metal layer. The invention further provides a manufacturing method of the COA substrate and a liquid crystal display panel. Compared with the prior art, the aperture ratio is increased, the contact hole area is also increased, reliability is improved, and meanwhile the percent of pass is increased.
Description
Technical field
The present invention relates to a kind of Thin Film Transistor-LCD technical field, particularly a kind of COA substrate and its manufacture
Method, liquid crystal panel.
Background technology
In liquid crystal panel industry, COA (color filter on array) technology is that color membrane substrates are made in by one kind
Structure on array base palte, has been used widely in TFT-LCD, and color blocking is produced on Array side (i.e. IC array
Substrate, the lower plate glass substrate in TFT-LCD screen) can effectively reduce the resistance (RC) of circuit, increase aperture opening ratio and improve aobvious
Show quality.Under the premise of panel high-res are high-frequency, COA technology has its irreplaceable advantage.
The subject matter that bubble (Bubble) problem is COA technological side pair is contained, it includes reliability testing in liquid crystal cell,
Mainly cover environmental condition and deteriorate (hot and humid low-temp low-pressure) storage and burn-in test.The form of bubble is air form,
Expanse the liquid crystal in existing region can be squeezed after heated, thus causing display abnormal；The formation of general bubble has
Two kinds of principal elements：The first factor is that color blocking layer is produced on Array side, and its color blocking tapping (CF open) is relatively deep, easily
Cause liquid crystal not completely to be filled in color blocking perforate, form space, finally develop into bubble；Second factor is color blocking basis
As organic material, in successive process and after the completion of extraneous stress change in the presence of, gas can be had successively to discharge,
Thus forming bubble.
At present, the countermeasure for above-mentioned factor mainly has：Liquid during 1.ODF processing procedure (One Drop Fill liquid crystal injection method)
The drop that crystalline substance drips is less, and figure is closeer；2. open an aperture in color blocking and the second passivation layer (PV2), allow gas in color blocking
Body discharges in successive process.But the design that both countermeasures have color blocking perforate (CF open) contains passivation layer
Perforate, the design of therefore color blocking perforate size needs to consider via (via hole) (i.e. transparency conducting layer ITO and metal level
M2 contact hole contact hole) size, board para-position deviation (i.e. do expose when, the precision alignd with preceding layer, in reality
When manufacturing, process work bench has deviation in itself, can there is also deviation between the board of different processing procedures and board), Yi Jise
Resistance material behavior three superposition, it has to the larger perforate of design, causes aperture opening ratio to lose.
Content of the invention
For overcoming the deficiencies in the prior art, the present invention provides a kind of COA substrate and its manufacture method, liquid crystal panel, thus
Increase product quality, improving product qualification rate, save production cost and shorten the production cycle.
The invention provides a kind of COA substrate, including underlay substrate, on described underlay substrate on be sequentially formed with grid gold
Belong to layer, gate insulator, active layer and source-drain electrode metal level, after described source-drain electrode metallic layer graphic, form source-drain electrode, described
First passivation layer is formed with source-drain electrode metal level；Be provided with color blocking layer on described first passivation layer, described first passivation layer with
And having first through hole and the second through hole in described color blocking layer, described first through hole is connected with described second through hole, in institute
State and the second passivation layer is formed with color blocking layer, corresponding described second through hole of described second passivation layer has third through-hole, described the
The aperture of three through holes is more than the aperture of described first through hole so that being formed between described first passivation layer and described second passivation layer
Offset areas；Described first through hole, the second through hole and third through-hole composition via, on described second passivation layer, described lead
It is provided with transparency conducting layer (9) on through-hole wall and the described source-drain electrode metal level that exposes by described via.
Further, the hole wall of described second through hole is curved.
Present invention also offers a kind of manufacture method of COA substrate, the method comprises the steps：
Step one S01, forms gate metal layer on underlay substrate；
Step 2 S02, the underlay substrate not covered in gate metal layer and by gate metal layer forms gate insulator
Layer；
Step 3 S03, forms active layer on gate insulator；
Step 4 S04, is also formed with source-drain electrode metal level on gate insulator, by described source-drain electrode metallic layer graphic
Form source-drain electrode；
Step 5 S05, forms the first passivation layer by chemical vapor deposition method on described source-drain electrode metal level；
Step 6 S06, forms color blocking layer by photomask technique, by exposure imaging technique on described first passivation layer
Form the second through hole；
Step 7 S07, forms the second passivation layer by chemical vapor deposition method in described color blocking layer；
Step 8 S08, is formed photoresistance using coating, exposure technology on the second passivation layer, is etched away by etch process
Described first passivation layer not blocked by described photoresistance and the second passivation layer, form first on described first passivation layer and lead to
Hole, forms third through-hole on described second passivation layer, and described first through hole, the second through hole and third through-hole connection composition are led
Through hole；
Step 9 S09, peels off the described photoresistance on described second passivation layer by stripping technology, and passes through physical vapor
Depositing operation is on described second passivation layer, described via inwall and the described source-drain electrode being exposed by described via
Transparency conducting layer is formed on metal level；
Step 10 S10, carries out patterned process in described transparency conducting layer after exposure, development and etching and forms picture
Plain electrode.
Further, described first passivation layer is formed by chemical vapor deposition method deposited silicon nitride.
Further, in step 6 S06, after forming described second through hole, make described second through hole after hot setting
Hole wall is curved, and the upper end open of described second through hole is more than the lower ending opening of described second through hole.
Further, the aperture of described first through hole is less than the aperture of third through-hole so that the first passivation layer and second
It is formed with offset areas between passivation layer.
Present invention also offers a kind of liquid crystal panel, including described COA substrate.
The present invention compared with prior art, by opening up first through hole on the first passivation layer, opens on the second passivation layer
Apertured footpath is more than the third through-hole of first through hole, and in color blocking layer perforate, covers layer of transparent conductive layer so that gas in color blocking
Body can be gone out by the offset areas loss between first through hole and third through-hole in successive process, thus avoiding bubble
Exist；And the size of color blocking perforate (the second through hole) can reduce it is only necessary to consider board para-position deviation, and color blocking material is special
Property both affect, aperture opening ratio gets a promotion；By the color blocking perforate (CF opening with color blocking layer for the second passivation layer in COA processing procedure
Open) it is combined together, that is, the upper end open of the second through hole and the aperture of third through-hole are equal, it is possible to reduce array side is (integrated
Circuit array substrate, i.e. lower glass substrate) terrain complexity, that is, refer to have the place of circuit in production of integrated circuits and do not have
The place of circuit can form height fall；But also increase contact hole area, improve reliability, qualification rate is also carried simultaneously
High.
Brief description
Fig. 1 is the structural representation after the present invention forms the first passivation layer and the second passivation layer.
Fig. 2 is the structural representation that the present invention forms photoresistance.
Fig. 3 is that the present invention etches away the first passivation layer not having color blocking to block, forms the knot of via after the second passivation layer
Structure schematic diagram.
Fig. 4 is the structural representation that the present invention forms transparency conducting layer on via.
Fig. 5 is the floor map of the via of the present invention.
The manufacture method flow chart of Fig. 6 COA of the present invention substrate.
Specific embodiment
With reference to the accompanying drawings and examples the present invention is described in further detail.
As shown in Figure 4 and Figure 5, the COA substrate (Color Filter on Array) of the present invention includes underlay substrate, institute
State and form gate metal layer by 4 or 5 road photomask techniques on underlay substrate on underlay substrate, gate metal layer is formed
Gate insulator, gate insulator forms active layer, described gate insulator is also formed with source-drain electrode metal level 1, described
Source-drain electrode metal level 1 graphically forms source-drain electrode afterwards, and described source-drain electrode metal level 1 is formed with first by chemical vapor deposition
Passivation layer 2, described first passivation layer 2 is used for TFT back of the body raceway groove is protected；On the first passivation layer 2, deposition has one layer of color blocking
Layer 3, described first passivation layer 2 and color blocking layer 3 have first through hole 4, the second through hole 5, described first through hole 4 and the
Two through holes 5 connect, and are formed with the second passivation layer 6 by chemical vapor deposition in color blocking layer 3, and described second passivation layer 6 is located at
Third through-hole 7 had on the second through hole 5, the aperture of third through-hole 7 be more than first through hole 4 aperture so that the first passivation layer 2 with
And second be formed with offset areas 11 between passivation layer 6, the gas that offset areas 11 are used in color blocking passes through in successive process
This part hole wall loss that second through hole 5 is located at offset areas 11 is gone out；Described first through hole 4, the second through hole 5 and threeway
Hole 7 forms via 8, and described first through hole 4 forms the lower ending opening of via 8, and the second through hole 5 forms the hole wall of via 8
Part, third through-hole 7 forms the upper end open of via 8, on the second passivation layer 6, via 8 and source-drain electrode metal level 1
It is coated with layer of transparent conduction (ITO) layer 9 at via 8.
The hole wall of described second through hole 5 is curved, forms horn shape, makes the edge of the second through hole 5 and the upper of color blocking layer 3
Surface is in smoothing junction, is more beneficial for liquid crystal in successive process and is sufficient filling with via without there is gap.
Described first passivation layer 2 and the second passivation layer 6 are all using silicon nitride SiNx.
A kind of liquid crystal panel of the present invention, includes above-mentioned COA substrate, and here is not repeating.
In the present invention, the aperture of first through hole 3 is equal with the aperture of the lower ending opening of the second through hole 5, the hole of third through-hole 7
Footpath equal with the aperture of the upper end open of the second through hole 5 so that the size reduction of the second through hole 5 in color blocking layer 3, set existing
In meter, the position of opening of the second passivation layer and the first passivation layer is respectively positioned on the bottom of color blocking perforate, and its second passivation layer and
The aperture of the perforate of the first passivation layer is less than the aperture of color blocking perforate, and via is by the second passivation layer and the first passivation layer
Perforate is constituted, and just also needs to consider whether the size of via (via hole) can be led so in the design of color blocking perforate size
Cause the problem of para-position deviation more increasing, in order to avoid the problem of para-position deviation is it is necessary to be also contemplated for into the aperture of via,
Have to increase the aperture of color blocking perforate, thus reducing the problem of para-position deviation, and in the present invention, color blocking perforate does not need to wrap
Perforate containing the first passivation layer, the second passivation layer, therefore can be designed to less, and transparency conducting layer pass through by first through hole,
The via that second through hole is formed with third through-hole is contacted with source-drain electrode metal level, thus in the problem of color blocking perforate size
On, the size of via need not be considered, original little of the ratio that therefore aperture of color blocking perforate just can be done；Prior art is existed
The aperture for loss bubble opening up on color blocking layer 3 surface is together with color blocking aperture combination, logical by the second of color blocking layer 3
This part hole wall that hole 5 is located at offset areas 11 carries out the loss of bubble, it is to avoid the landform of array base palte is excessively complicated and make
Become the problem of other influences；By above-mentioned structure, present invention only requires considering board para-position deviation and color blocking material behavior
Both impacts, make aperture opening ratio get a promotion, and so can reduce the brightness of backlight, thus the amount of saving energy.
As shown in fig. 6, the manufacture method of the COA substrate of the present invention, comprise the steps：
Step one S01, forms gate metal layer on underlay substrate；
Step 2 S02, the underlay substrate not covered in gate metal layer and by gate metal layer forms gate insulator
Layer；
Step 3 S03, forms active layer on gate insulator；
Step 4 S04, is also formed with source-drain electrode metal level 1 on gate insulator, by graphical for source-drain electrode metal level 1 shape
Become source-drain electrode；
Step 5 S05, forms the first passivation by the chemical vapor deposition method of prior art on source-drain electrode metal level 1
Layer 2, protects to TFT back of the body raceway groove；Described first passivation layer 2 passes through chemical vapor deposition method deposited silicon nitride SiNx shape
Become；
Step 6 S06, forms color blocking layer 3 by the photomask technique of prior art, by existing on the first passivation layer 2
The exposure imaging technique of technology forms the second through hole 5, makes the two side holes of the second through hole 5 after (generally 230 DEG C) solidifications of high temperature
Wall is curved, forms horn shape, and the upper end open of described second through hole 5 is more than the lower ending opening of the second through hole 5；
Step 7 S07, forms the second passivation layer 6 by the chemical vapor deposition method of prior art in color blocking layer 3；Institute
State the second passivation layer 6 and (shown in Fig. 1) is formed by chemical vapor deposition method deposited silicon nitride SiNx；
Step 8 S08, forms photoresistance 10 using the coating of prior art, exposure technology on the second passivation layer 6, by existing
The etch process having technology etches away the first passivation layer 2 not blocked by photoresistance 10 and the second passivation layer 6 (shown in Fig. 2), institute
State the dry carving technology that etch process is preferably prior art, the first passivation layer 2 forms first through hole 4, defines transparent leading
Electric layer 9 and the contact hole of source-drain electrode metal level 1, the second passivation layer 6 forms third through-hole 7 (shown in Fig. 3), first through hole 4
Aperture is less than the aperture of third through-hole 7 so that being formed with offset areas 11 between the first passivation layer 2 and the second passivation layer 6, wrong
The gas that open region 11 is used in color blocking is gone out by offset areas 11 loss in successive process, described first through hole 4, second
Through hole 5 and third through-hole 7 constitute via 8, and described first through hole 4 forms the lower ending opening of via 8, the second through hole 5 shape
Become the wall portion of via 8, third through-hole 7 forms the upper end open of via 8；
Step 9 S09, peels off the photoresistance 10 on the second passivation layer 6 by the stripping technology of prior art, and by existing
Have the physical gas-phase deposition of technology on described second passivation layer 6, described via 8 inwall and pass through described via
Transparency conducting layer 9 (shown in Fig. 4) is formed on the 8 described source-drain electrode metal levels 1 exposing；
Step 10 S10, is carried out at patterning in transparency conducting layer 9 after the exposure of prior art, development and etching
Reason forms pixel electrode.
4 roads or 5 of prior art can be adopted in the technique of step one S01～step 4 S04 formation bottom gate in the present invention
Road photomask technique manufacture obtains；The mode that step 10 S10 forms pixel electrode may also be employed being used in prior art forming picture
The method of plain electrode obtains；In embodiment of the present invention, the concrete production method of each layer does not do particular determination, the achievable present invention
?.
Although illustrate and describing the present invention with reference to specific embodiment, it should be appreciated by those skilled in the art that：
In the case of without departing from the spirit and scope of the present invention being limited by claim and its equivalent, can here carry out form and
Various change in details.
Claims (7)
1. a kind of COA substrate, including underlay substrate, on described underlay substrate on be sequentially formed with gate metal layer, gate insulator
Layer, active layer and source-drain electrode metal level (1), described source-drain electrode metal level (1) graphically form source-drain electrode afterwards it is characterised in that：
It is formed with the first passivation layer (2) on described source-drain electrode metal level (1)；It is provided with color blocking layer (3) on described first passivation layer (2),
First through hole (4) and the second through hole (5) had on described first passivation layer (2) and described color blocking layer (3), described first
Through hole (4) is connected with described second through hole (5), is formed with the second passivation layer (6) in described color blocking layer (3), and described second is blunt
Change corresponding described second through hole (5) of layer (6) and have third through-hole (7), the aperture of described third through-hole (7) is more than described first and leads to
The aperture in hole (4) is so that form offset areas (11) between described first passivation layer (2) and described second passivation layer (6)；Described
First through hole (4), the second through hole (5) and third through-hole (7) composition via (8), described second passivation layer (6) is upper, described
It is provided with electrically conducting transparent on via (8) inwall and the described source-drain electrode metal level (1) that exposes by described via (8)
Layer (9).
2. COA substrate according to claim 1 it is characterised in that：The hole wall of described second through hole (5) is curved.
3. a kind of manufacture method of COA substrate is it is characterised in that the method comprises the steps：
Step one S01, forms gate metal layer on underlay substrate；
Step 2 S02, the underlay substrate not covered in gate metal layer and by gate metal layer forms gate insulator；
Step 3 S03, forms active layer on gate insulator；
Step 4 S04, is also formed with source-drain electrode metal level (1) on gate insulator, by described source-drain electrode metal level (1) figure
Change and form source-drain electrode；
Step 5 S05, above forms the first passivation layer (2) by chemical vapor deposition method in described source-drain electrode metal level (1)；
Step 6 S06, forms color blocking layer (3) in the upper photomask technique of passing through of described first passivation layer (2), by exposure imaging work
Skill forms the second through hole (5)；
Step 7 S07, above forms the second passivation layer (6) by chemical vapor deposition method in described color blocking layer (3)；
Step 8 S08, using coating, exposure technology in the second passivation layer (6) upper formation photoresistance (10), is etched by etch process
Fall described first passivation layer (2) do not blocked by described photoresistance (10) and the second passivation layer (6), in described first passivation layer
(2) upper form first through hole (4), form third through-hole (7) described second passivation layer (6) is upper, described first through hole (4), the
Two through holes (5) and third through-hole (7) connection constitute via (8)；
Step 9 S09, peels off the described photoresistance (10) on described second passivation layer (6) by stripping technology, and passes through physics
Gas-phase deposition is described second passivation layer (6) is upper, described via (8) inwall and exposed by described via (8)
The described source-drain electrode metal level (1) upper formation transparency conducting layer (9) going out；
Step 10 S10, carries out patterned process in described transparency conducting layer (9) after exposure, development and etching and forms picture
Plain electrode.
4. COA substrate according to claim 3 manufacture method it is characterised in that：Described first passivation layer (2) passes through to change
Learn gas-phase deposition deposited silicon nitride to be formed.
5. COA substrate according to claim 3 manufacture method it is characterised in that：In step 6 S06, form described the
After two through holes (5), make the hole wall of described second through hole (5) curved after hot setting, the upper end of described second through hole (5) is opened
Mouth is more than the lower ending opening of described second through hole (5).
6. COA substrate according to claim 3 manufacture method it is characterised in that：The aperture of described first through hole (4) is little
In third through-hole (7) aperture so that being formed with offset areas (11) between the first passivation layer (2) and the second passivation layer (6).
7. a kind of liquid crystal panel it is characterised in that：Including the COA substrate as described in any one of claim 1-2.
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| CN201610933807.XA CN106444190B (en) | 2016-10-31 | 2016-10-31 | COA substrate, manufacturing method thereof and liquid crystal panel |
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| CN201610933807.XA CN106444190B (en) | 2016-10-31 | 2016-10-31 | COA substrate, manufacturing method thereof and liquid crystal panel |
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Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107037653A (en) * | 2017-05-11 | 2017-08-11 | 惠科股份有限公司 | Display panel and preparation method thereof and display |
| CN107463042A (en) * | 2017-09-06 | 2017-12-12 | 深圳市华星光电技术有限公司 | Array base palte and its manufacture method, liquid crystal panel |
| CN107479286A (en) * | 2017-09-04 | 2017-12-15 | 深圳市华星光电技术有限公司 | A kind of via structure for improving GTG twill |
| CN107589582A (en) * | 2017-09-04 | 2018-01-16 | 深圳市华星光电技术有限公司 | COA display panels and preparation method thereof, COA display devices |
| CN107589581A (en) * | 2017-09-01 | 2018-01-16 | 深圳市华星光电技术有限公司 | A kind of preparation method, array base palte and the display panel of array base palte color blocking layer |
| WO2019169703A1 (en) * | 2018-03-09 | 2019-09-12 | 深圳市华星光电半导体显示技术有限公司 | Mask plate, array substrate, and manufacturing method of array substrate |
| US10578784B2 (en) | 2017-09-04 | 2020-03-03 | Shenzhen China Star Optoelectronics Technology Co., Ltd | Color-filter on array (COA) display panel, manufacturing method thereof and COA display device |
| CN111077706A (en) * | 2019-12-06 | 2020-04-28 | Tcl华星光电技术有限公司 | COA substrate and manufacturing method thereof |
| US11099481B2 (en) | 2018-03-09 | 2021-08-24 | Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | Mask plate, array substrate, and preparation method thereof |
| US11163203B2 (en) | 2019-12-06 | 2021-11-02 | Tcl China Star Optoelectronics Technology Co., Ltd. | COA substrate and method of fabricating same |
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| US11099481B2 (en) | 2018-03-09 | 2021-08-24 | Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | Mask plate, array substrate, and preparation method thereof |
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| US11163203B2 (en) | 2019-12-06 | 2021-11-02 | Tcl China Star Optoelectronics Technology Co., Ltd. | COA substrate and method of fabricating same |
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Address after: 9-2 Tangming Avenue, Guangming New District, Shenzhen City, Guangdong Province Patentee after: TCL China Star Optoelectronics Technology Co.,Ltd. Address before: 9-2 Tangming Avenue, Guangming New District, Shenzhen City, Guangdong Province Patentee before: Shenzhen China Star Optoelectronics Technology Co.,Ltd. |