CN106435741A - Large-size sapphire annealing process - Google Patents
Large-size sapphire annealing process Download PDFInfo
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- CN106435741A CN106435741A CN201610844329.5A CN201610844329A CN106435741A CN 106435741 A CN106435741 A CN 106435741A CN 201610844329 A CN201610844329 A CN 201610844329A CN 106435741 A CN106435741 A CN 106435741A
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/02—Heat treatment
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
- C30B29/20—Aluminium oxides
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Abstract
The invention discloses a large-size sapphire annealing process. A multistage vacuum annealing process is adopted for annealing treatment, and compared with existing aerobic annealing, crystals are uniform in heat distribution and low in heat loss in inert environment; the annealing process is divided into 30 stages, and temperature is increased and decreased gradually and controlled stage by stage, so that sapphire is small in inside temperature difference and quick in stress elimination. In conclusion, the annealing process is suitable for large-size sapphire annealing treatment, capable of effectively eliminating residual stress of sapphire, is high in elimination speed and less prone to causing cracking of sapphire, production cost is lowered, and improving of processing efficiency of large-size sapphire and quality of the crystals are facilitated.
Description
Technical field
The present invention relates to sapphire manufacture field, particularly a kind of large-size sapphire annealing process processing method.
Background technology
Sapphire（Sapphire）Crystal has excellent optical property, physical property and stable chemical property.Extensively
It is applied to high-brightness LED backing material, various optical components, scanner window material.Sapphire window piece is used for optical window
Mouth field has following excellent characteristic：1. high optical transmittance, sapphire crystal has good light transmission, its printing opacity model
Enclose for 0.15～7.5 micron, cover the wave bands such as ultraviolet, visible, near-infrared, mid-infrared；2. high-wearing feature, the coefficient of expansion is only
5X10-6/ degree, fusing point be 2050 °C, operating temperature up to 1900 °C, with outstanding heat shock resistance and resistance to elevated temperatures；3. very
Good mechanical performance, its hardness is up to 9 grades of Mohs, while also good comprcssive strength, compressive strength and bending strength, while
With electromagnetism interference, Electro Magnetic Compatibility, radiation resistance, electrical insulation capability.
With the development of sapphire application, more and more to the market demand of large-size sapphire, its product requirement
Birefringence more and more higher.Generally small size, stress is easily eliminated the sapphire of thickness of thin in process, and large scale, thickness
Degree more than 10mm, in annealing process, easily cracking, internal stress elimination are inadequate.
Content of the invention
For the problems referred to above, the invention discloses a kind of large-size sapphire annealing process processing method, mainly for big
Size（More than diameter phi 300mm）, thickness in the sapphire of more than 10mm, can effectively reduce its processing cost, and lift which and add
Working medium amount.
For solving above technical problem, the technical scheme that the present invention is provided is:
A kind of large-size sapphire annealing process processing method, it is characterised in that including step in detail below：
1st, placed a wafer in take-in box first, be then placed in vacuum annealing furnace；
2nd, evacuation is carried out to vacuum annealing furnace, makes vacuum annealing furnace interior that vacuum state is produced, make temperature branch uniform, temperature
Loss is preferably minimized, and the actual temperature difference is few；
3rd, start vacuum annealing furnace, using multistage annealing process, large-size sapphire is made annealing treatment；
Described multistage annealing process, including 42 stages, wherein, first stage：Vacuum annealing furnace is persistently overheating, by room temperature liter
Temperature continues 2min to 300 DEG C；Second stage：Vacuum annealing furnace is persistently overheating, is warming up to 600 DEG C by 300 DEG C, continues 2min, rises
Warm speed is 150 DEG C/min；Phase III：Vacuum annealing furnace is persistently overheating, is warming up to 1000 DEG C by 600 DEG C, continues 2min, rises
Warm speed is 200 DEG C/min；Fourth stage：Vacuum annealing furnace is persistently overheating, is warming up to 1400 DEG C by 1000 DEG C, continues 2min,
Heating rate is 200 DEG C/min；5th stage：Vacuum annealing furnace is incubated at 1400 DEG C, continues 4min；6th stage：Vacuum is moved back
Stove is persistently overheating, is warming up to 1500 DEG C by 1400 DEG C, continues 2min, and heating rate is 50 DEG C/min,；7th stage：Vacuum
Annealing furnace is incubated at 1500 DEG C, continues 2min；8th stage：Vacuum annealing furnace is persistently overheating, is warming up to 1680 DEG C by 1500 DEG C,
Continue 2min, heating rate is 90 DEG C/min；9th stage：Vacuum annealing furnace is incubated at 1680 DEG C, continues 22min；Tenth rank
Section：Vacuum annealing furnace starts slow cooling, is cooled to 1630 DEG C by 1680 DEG C, continues 2min, and rate of temperature fall is 25 DEG C/min；The
11 stages：Vacuum annealing furnace slow cooling, is cooled to 1580 DEG C by 1630 DEG C, continues 2min, and rate of temperature fall is 35 DEG C/min；
Tenth two-stage：Vacuum annealing furnace slow cooling, is cooled to 1530 DEG C by 1580 DEG C, continues 2min；13rd stage：Vacuum is moved back
Stove slow cooling, is cooled to 1480 DEG C by 1530 DEG C, continues 2min；14th stage：Vacuum annealing furnace slow cooling, by
1480 DEG C are cooled to 1430 DEG C, continue 2min；15th stage：Vacuum annealing furnace slow cooling, is cooled to 1380 by 1430 DEG C
DEG C, continue 2min；16th stage：Vacuum annealing furnace slow cooling, is cooled to 1330 DEG C by 1380 DEG C, continues 2min；Tenth
Seven stages：Vacuum annealing furnace slow cooling, is cooled to 1280 DEG C by 1330 DEG C, continues 2min；18th stage：Vacuum annealing furnace
Slow cooling, is cooled to 1230 DEG C by 1280 DEG C, continues 2min；19th stage：Vacuum annealing furnace slow cooling, by 1230 DEG C
1180 DEG C are cooled to, continue 2min；20th stage：Vacuum annealing furnace slow cooling, is cooled to 1110 DEG C by 1180 DEG C, continues
2min；21st stage：Vacuum annealing furnace slow cooling, is cooled to 1040 DEG C by 1110 DEG C, continues 2min；20th second order
Section：Vacuum annealing furnace slow cooling, is cooled to 970 DEG C by 1040 DEG C, continues 2min；23rd stage：Vacuum annealing furnace delays
Slow cooling, is cooled to 900 DEG C by 970 DEG C, continues 2min；24th stage：Vacuum annealing furnace slow cooling, is dropped by 900 DEG C
Temperature continues 2min to 830 DEG C；25th stage：Vacuum annealing furnace slow cooling, is cooled to 760 DEG C by 830 DEG C, continues
2min；26th stage：Vacuum annealing furnace slow cooling, is cooled to 690 DEG C by 760 DEG C, continues 2min；27th rank
Section：Vacuum annealing furnace slow cooling, is cooled to 590 DEG C by 690 DEG C, continues 2min；28th stage：Vacuum annealing furnace is slow
Cooling, is cooled to 490 DEG C by 590 DEG C, continues 2min；29th stage：Vacuum annealing furnace slow cooling, is lowered the temperature by 490 DEG C
To 390 DEG C, continue 2min；30th stage：Vacuum annealing furnace slow cooling, is cooled to 290 DEG C by 390 DEG C, continues 2min；
4th, after the completion for the treatment of multistage annealing process, large-size sapphire is taken out, is placed in room temperature and is cooled to room temperature, you can.
A kind of above-mentioned large-size sapphire annealing process processing method, wherein, the take-in box is aluminium oxide ceramics
Crucible.
A kind of above-mentioned large-size sapphire annealing process processing method, wherein, vacuum annealing in step 2 after evacuation
Vacuum in stove is 0.1 ~ 0.2Mpa.
A kind of above-mentioned large-size sapphire annealing process processing method, wherein, the 12nd of the multistage annealing process the
The average rate of temperature fall in stage ~ the 19th stage is 35 DEG C/min.
A kind of above-mentioned large-size sapphire annealing process processing method, wherein, the 20th of the multistage annealing process the
The average rate of temperature fall in stage ~ the 26th stage is 25 DEG C/min.
A kind of above-mentioned large-size sapphire annealing process processing method, wherein, the 20th of the multistage annealing process the
The average rate of temperature fall in seven stages ~ the 30th stage is 50 DEG C/min.
Beneficial effects of the present invention are：
A kind of large-size sapphire annealing process processing method disclosed by the invention, is annealed using multi-stage vacuum annealing process
Process, more conventional aerobic annealing is compared, and chip receives uniform heat distribution in inert environments, and thermal loss is less, and is divided into 30
In the stage, progressively carry out heating-cooling, temperature gradual control, sapphire internal difference in temperature is few, stress relieving fast, in sum, the present invention
Make annealing treatment suitable for large-size sapphire, sapphire residual stress can be effectively eliminated, release rate is fast, and is difficult to cause indigo plant
Gem ftractures, and reduces production cost, is favorably improved the working (machining) efficiency of large-size sapphire, lifts wafer quality.
Description of the drawings
The multistage annealing process curve figure of Fig. 1.
Specific embodiment
A kind of large-size sapphire annealing process processing method, it is characterised in that including step in detail below：
1st, placed a wafer in take-in box first, be then placed in vacuum annealing furnace；
2nd, evacuation is carried out to vacuum annealing furnace, makes vacuum annealing furnace interior that vacuum state is produced, make temperature branch uniform, temperature
Loss is preferably minimized, and the actual temperature difference is few；
3rd, start vacuum annealing furnace, using multistage annealing process, large-size sapphire is made annealing treatment；
Described multistage annealing process, including 42 stages, wherein, first stage：Vacuum annealing furnace is persistently overheating, by room temperature liter
Temperature continues 2min to 300 DEG C；Second stage：Vacuum annealing furnace is persistently overheating, is warming up to 600 DEG C by 300 DEG C, continues 2min, rises
Warm speed is 150 DEG C/min；Phase III：Vacuum annealing furnace is persistently overheating, is warming up to 1000 DEG C by 600 DEG C, continues 2min, rises
Warm speed is 200 DEG C/min；Fourth stage：Vacuum annealing furnace is persistently overheating, is warming up to 1400 DEG C by 1000 DEG C, continues 2min,
Heating rate is 200 DEG C/min；5th stage：Vacuum annealing furnace is incubated at 1400 DEG C, continues 4min；6th stage：Vacuum is moved back
Stove is persistently overheating, is warming up to 1500 DEG C by 1400 DEG C, continues 2min, and heating rate is 50 DEG C/min,；7th stage：Vacuum
Annealing furnace is incubated at 1500 DEG C, continues 2min；8th stage：Vacuum annealing furnace is persistently overheating, is warming up to 1680 DEG C by 1500 DEG C,
Continue 2min, heating rate is 90 DEG C/min；9th stage：Vacuum annealing furnace is incubated at 1680 DEG C, continues 22min；Tenth rank
Section：Vacuum annealing furnace starts slow cooling, is cooled to 1630 DEG C by 1680 DEG C, continues 2min, and rate of temperature fall is 25 DEG C/min；The
11 stages：Vacuum annealing furnace slow cooling, is cooled to 1580 DEG C by 1630 DEG C, continues 2min, and rate of temperature fall is 35 DEG C/min；
Tenth two-stage：Vacuum annealing furnace slow cooling, is cooled to 1530 DEG C by 1580 DEG C, continues 2min；13rd stage：Vacuum is moved back
Stove slow cooling, is cooled to 1480 DEG C by 1530 DEG C, continues 2min；14th stage：Vacuum annealing furnace slow cooling, by
1480 DEG C are cooled to 1430 DEG C, continue 2min；15th stage：Vacuum annealing furnace slow cooling, is cooled to 1380 by 1430 DEG C
DEG C, continue 2min；16th stage：Vacuum annealing furnace slow cooling, is cooled to 1330 DEG C by 1380 DEG C, continues 2min；Tenth
Seven stages：Vacuum annealing furnace slow cooling, is cooled to 1280 DEG C by 1330 DEG C, continues 2min；18th stage：Vacuum annealing furnace
Slow cooling, is cooled to 1230 DEG C by 1280 DEG C, continues 2min；19th stage：Vacuum annealing furnace slow cooling, by 1230 DEG C
1180 DEG C are cooled to, continue 2min；20th stage：Vacuum annealing furnace slow cooling, is cooled to 1110 DEG C by 1180 DEG C, continues
2min；21st stage：Vacuum annealing furnace slow cooling, is cooled to 1040 DEG C by 1110 DEG C, continues 2min；20th second order
Section：Vacuum annealing furnace slow cooling, is cooled to 970 DEG C by 1040 DEG C, continues 2min；23rd stage：Vacuum annealing furnace delays
Slow cooling, is cooled to 900 DEG C by 970 DEG C, continues 2min；24th stage：Vacuum annealing furnace slow cooling, is dropped by 900 DEG C
Temperature continues 2min to 830 DEG C；25th stage：Vacuum annealing furnace slow cooling, is cooled to 760 DEG C by 830 DEG C, continues
2min；26th stage：Vacuum annealing furnace slow cooling, is cooled to 690 DEG C by 760 DEG C, continues 2min；27th rank
Section：Vacuum annealing furnace slow cooling, is cooled to 590 DEG C by 690 DEG C, continues 2min；28th stage：Vacuum annealing furnace is slow
Cooling, is cooled to 490 DEG C by 590 DEG C, continues 2min；29th stage：Vacuum annealing furnace slow cooling, is lowered the temperature by 490 DEG C
To 390 DEG C, continue 2min；30th stage：Vacuum annealing furnace slow cooling, is cooled to 290 DEG C by 390 DEG C, continues 2min；
4th, after the completion for the treatment of multistage annealing process, large-size sapphire is taken out, is placed in room temperature and is cooled to room temperature, you can.
A kind of above-mentioned large-size sapphire annealing process processing method, wherein, the take-in box is aluminium oxide ceramics
Crucible.
A kind of above-mentioned large-size sapphire annealing process processing method, wherein, vacuum annealing in step 2 after evacuation
Vacuum in stove is 0.1 ~ 0.2Mpa.
A kind of above-mentioned large-size sapphire annealing process processing method, wherein, the 12nd of the multistage annealing process the
The average rate of temperature fall in stage ~ the 19th stage is 35 DEG C/min.
A kind of above-mentioned large-size sapphire annealing process processing method, wherein, the 20th of the multistage annealing process the
The average rate of temperature fall in stage ~ the 26th stage is 25 DEG C/min.
A kind of above-mentioned large-size sapphire annealing process processing method, wherein, the 20th of the multistage annealing process the
The average rate of temperature fall in seven stages ~ the 30th stage is 50 DEG C/min.
The above, the only present invention preferably specific embodiment, but protection scope of the present invention is not limited thereto,
Any those familiar with the art the invention discloses technical scope in, the change or replacement that can readily occur in,
Should all cover within the scope of the present invention.Therefore, protection scope of the present invention should be with the protection domain of claims
It is defined.
Claims (6)
1. a kind of large-size sapphire annealing process processing method, it is characterised in that including step in detail below：
1st, placed a wafer in take-in box first, be then placed in vacuum annealing furnace；
2nd, evacuation is carried out to vacuum annealing furnace, makes vacuum annealing furnace interior that vacuum state is produced, make temperature branch uniform, temperature
Loss is preferably minimized, and the actual temperature difference is few；
3rd, start vacuum annealing furnace, using multistage annealing process, large-size sapphire is made annealing treatment；
Described multistage annealing process, including 42 stages, wherein, first stage：Vacuum annealing furnace is persistently overheating, by room temperature liter
Temperature continues 2min to 300 DEG C；Second stage：Vacuum annealing furnace is persistently overheating, is warming up to 600 DEG C by 300 DEG C, continues 2min, rises
Warm speed is 150 DEG C/min；Phase III：Vacuum annealing furnace is persistently overheating, is warming up to 1000 DEG C by 600 DEG C, continues 2min, rises
Warm speed is 200 DEG C/min；Fourth stage：Vacuum annealing furnace is persistently overheating, is warming up to 1400 DEG C by 1000 DEG C, continues 2min,
Heating rate is 200 DEG C/min；5th stage：Vacuum annealing furnace is incubated at 1400 DEG C, continues 4min；6th stage：Vacuum is moved back
Stove is persistently overheating, is warming up to 1500 DEG C by 1400 DEG C, continues 2min, and heating rate is 50 DEG C/min,；7th stage：Vacuum
Annealing furnace is incubated at 1500 DEG C, continues 2min；8th stage：Vacuum annealing furnace is persistently overheating, is warming up to 1680 DEG C by 1500 DEG C,
Continue 2min, heating rate is 90 DEG C/min；9th stage：Vacuum annealing furnace is incubated at 1680 DEG C, continues 22min；Tenth rank
Section：Vacuum annealing furnace starts slow cooling, is cooled to 1630 DEG C by 1680 DEG C, continues 2min, and rate of temperature fall is 25 DEG C/min；The
11 stages：Vacuum annealing furnace slow cooling, is cooled to 1580 DEG C by 1630 DEG C, continues 2min, and rate of temperature fall is 35 DEG C/min；
Tenth two-stage：Vacuum annealing furnace slow cooling, is cooled to 1530 DEG C by 1580 DEG C, continues 2min；13rd stage：Vacuum is moved back
Stove slow cooling, is cooled to 1480 DEG C by 1530 DEG C, continues 2min；14th stage：Vacuum annealing furnace slow cooling, by
1480 DEG C are cooled to 1430 DEG C, continue 2min；15th stage：Vacuum annealing furnace slow cooling, is cooled to 1380 by 1430 DEG C
DEG C, continue 2min；16th stage：Vacuum annealing furnace slow cooling, is cooled to 1330 DEG C by 1380 DEG C, continues 2min；Tenth
Seven stages：Vacuum annealing furnace slow cooling, is cooled to 1280 DEG C by 1330 DEG C, continues 2min；18th stage：Vacuum annealing furnace
Slow cooling, is cooled to 1230 DEG C by 1280 DEG C, continues 2min；19th stage：Vacuum annealing furnace slow cooling, by 1230 DEG C
1180 DEG C are cooled to, continue 2min；20th stage：Vacuum annealing furnace slow cooling, is cooled to 1110 DEG C by 1180 DEG C, continues
2min；21st stage：Vacuum annealing furnace slow cooling, is cooled to 1040 DEG C by 1110 DEG C, continues 2min；20th second order
Section：Vacuum annealing furnace slow cooling, is cooled to 970 DEG C by 1040 DEG C, continues 2min；23rd stage：Vacuum annealing furnace delays
Slow cooling, is cooled to 900 DEG C by 970 DEG C, continues 2min；24th stage：Vacuum annealing furnace slow cooling, is dropped by 900 DEG C
Temperature continues 2min to 830 DEG C；25th stage：Vacuum annealing furnace slow cooling, is cooled to 760 DEG C by 830 DEG C, continues
2min；26th stage：Vacuum annealing furnace slow cooling, is cooled to 690 DEG C by 760 DEG C, continues 2min；27th rank
Section：Vacuum annealing furnace slow cooling, is cooled to 590 DEG C by 690 DEG C, continues 2min；28th stage：Vacuum annealing furnace is slow
Cooling, is cooled to 490 DEG C by 590 DEG C, continues 2min；29th stage：Vacuum annealing furnace slow cooling, is lowered the temperature by 490 DEG C
To 390 DEG C, continue 2min；30th stage：Vacuum annealing furnace slow cooling, is cooled to 290 DEG C by 390 DEG C, continues 2min；
4th, after the completion for the treatment of multistage annealing process, large-size sapphire is taken out, is placed in room temperature and is cooled to room temperature, you can.
2. a kind of large-size sapphire annealing process processing method as claimed in claim 1, it is characterised in that the annealing is held
Device is alumina ceramic crucible.
3. a kind of large-size sapphire annealing process processing method as claimed in claim 1, it is characterised in that take out in step 2
The vacuum in vacuum annealing furnace after vacuum is 0.1 ~ 0.2Mpa.
4. a kind of large-size sapphire annealing process processing method as claimed in claim 1, it is characterised in that described multistage move back
The average rate of temperature fall in the tenth two-stage ~ the 19th stage of ignition technique is 35 DEG C/min.
5. a kind of large-size sapphire annealing process processing method as claimed in claim 1, it is characterised in that described multistage move back
The average rate of temperature fall in the 20th stage ~ the 26th stage of ignition technique is 25 DEG C/min.
6. a kind of large-size sapphire annealing process processing method as claimed in claim 1, it is characterised in that described multistage move back
The average rate of temperature fall in the 27th stage ~ the 30th stage of ignition technique is 50 DEG C/min.
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107254717A (en) * | 2017-05-19 | 2017-10-17 | 广东富源科技股份有限公司 | It is a kind of to strengthen the method for Sapphire mobile phone cover plate intensity |
| CN107541785A (en) * | 2017-09-12 | 2018-01-05 | 中国电子科技集团公司第四十六研究所 | A kind of in-situ annealing technique of aluminum nitride crystal |
| CN108239789A (en) * | 2018-03-30 | 2018-07-03 | 北京理工大学 | A kind of heat treatment process of large-size sapphire optical crystal |
| CN110197790A (en) * | 2019-06-17 | 2019-09-03 | 苏州长瑞光电有限公司 | A kind of method for annealing of Group III-V semiconductor wafer |
| CN110453287A (en) * | 2018-05-08 | 2019-11-15 | 安徽科瑞思创晶体材料有限责任公司 | A kind of method for annealing of sapphire crystal |
| CN113718339A (en) * | 2021-08-31 | 2021-11-30 | 台州星星光电科技有限公司 | Annealing method of sapphire glass panel |
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| CN103540998A (en) * | 2013-08-20 | 2014-01-29 | 曾锡强 | Annealing process for growing large-size sapphire crystal by kyropoulos method |
| CN103643300A (en) * | 2013-11-26 | 2014-03-19 | 浙江上城科技有限公司 | Annealing method applied to sapphire processing |
| CN105332060A (en) * | 2015-10-30 | 2016-02-17 | 江苏吉星新材料有限公司 | Secondary sapphire wafer annealing method |
| CN105525355A (en) * | 2015-11-06 | 2016-04-27 | 浙江露通机电有限公司 | In-situ annealing process for large-size sapphire crystal |
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| CN103540998A (en) * | 2013-08-20 | 2014-01-29 | 曾锡强 | Annealing process for growing large-size sapphire crystal by kyropoulos method |
| CN103643300A (en) * | 2013-11-26 | 2014-03-19 | 浙江上城科技有限公司 | Annealing method applied to sapphire processing |
| CN105332060A (en) * | 2015-10-30 | 2016-02-17 | 江苏吉星新材料有限公司 | Secondary sapphire wafer annealing method |
| CN105525355A (en) * | 2015-11-06 | 2016-04-27 | 浙江露通机电有限公司 | In-situ annealing process for large-size sapphire crystal |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107254717A (en) * | 2017-05-19 | 2017-10-17 | 广东富源科技股份有限公司 | It is a kind of to strengthen the method for Sapphire mobile phone cover plate intensity |
| CN107541785A (en) * | 2017-09-12 | 2018-01-05 | 中国电子科技集团公司第四十六研究所 | A kind of in-situ annealing technique of aluminum nitride crystal |
| CN108239789A (en) * | 2018-03-30 | 2018-07-03 | 北京理工大学 | A kind of heat treatment process of large-size sapphire optical crystal |
| CN110453287A (en) * | 2018-05-08 | 2019-11-15 | 安徽科瑞思创晶体材料有限责任公司 | A kind of method for annealing of sapphire crystal |
| CN110197790A (en) * | 2019-06-17 | 2019-09-03 | 苏州长瑞光电有限公司 | A kind of method for annealing of Group III-V semiconductor wafer |
| CN113718339A (en) * | 2021-08-31 | 2021-11-30 | 台州星星光电科技有限公司 | Annealing method of sapphire glass panel |
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