CN106435713A - Loading method of quartz crucible for single crystal furnace - Google Patents
Loading method of quartz crucible for single crystal furnace Download PDFInfo
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- CN106435713A CN106435713A CN201610745876.8A CN201610745876A CN106435713A CN 106435713 A CN106435713 A CN 106435713A CN 201610745876 A CN201610745876 A CN 201610745876A CN 106435713 A CN106435713 A CN 106435713A
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
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- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
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- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The invention discloses a loading method of a quartz crucible with a diameter of 23 inches and a height of 430mm for a single crystal furnace. Materials include a material A, a material B, a material C, a material D, a material E, a material F and a material G, wherein the particle sizes of the materials A, B, C, D, E, F and G are respectively 50mm-90mm, 20mm-80mm, 3mm-10mm, 20mm-50mm, 200mm-350mm, 150mm-220mm and 2mm-5mm, and the volumes of the materials A, B, C, D, E, F and G are respectively 32%, 16%, 6%, 4%, 31%, 5% and 6% of the total loading amount. The loading method comprises the following steps: uniformly sequentially laying the material C, the material B, the material C, the material E, the material B, the material G, the material F, the material D and the material A into a crucible. By virtue of the loading method, maximum loading amount of crucibles with the same size can be achieved.
Description
Technical field
The invention belongs to monocrystalline silicon production technical field, be specifically related to the loading method of a kind of single crystal growing furnace silica crucible.
Background technology
At present, domestic for 23 cun of thermal fields of single crystal growing furnace, the specification of silica crucible is mainly diameter 23 inches, highly
430mm.Under same crucible size cases, the material that the major diameter crystal bar of same length needs is more, and now disposably loads institute
There is material, not only extremely difficult, also there is very big risk.It in order to pursue bigger inventory, is then accomplished by secondary charging, i.e. first
A dress part, relends when waiting the fast fine melt of material and helps secondary feeder to carry out secondary charging, and silicon material in stove is not only easily made by this
Become secondary pollution, also extend the crystal pulling cycle, reduce operating efficiency.
Content of the invention
It is an object of the invention to provide a kind of operating efficiency that improves, once charging obtains the single crystal growing furnace quartz of maximum feeding quantity
The loading method of crucible.
For achieving the above object, the present invention is by the following technical solutions：
The loading method of a kind of single crystal growing furnace silica crucible, including A, B, C, D, E, F, G seven kinds material, A material particle diameter is 50-90mm, and B expects
Particle diameter is 20-80mm, and C material particle diameter is 3-10 mm, and D material particle diameter is 20-50mm, and E material particle diameter is 200-350mm, and F material particle diameter is
150-220mm, G material particle diameter is 2-5mm, and wherein A material volume accounts for the 32% of total feeding quantity, and B material volume accounts for the 16% of total feeding quantity, C
Material volume accounts for the 6% of total feeding quantity, and D material volume accounts for the 4% of total feeding quantity, and E material volume accounts for the 31% of total feeding quantity, and F material volume accounts for always
The 5% of feeding quantity, G material volume accounts for the 6% of total feeding quantity, according to following charging sequence, uniform for above-mentioned seven kinds of material laying is added crucible
In：It is firstly added 1/2nd of C material, is subsequently adding 1/2nd of B material, add the C material of remaining 1/2nd, then add
Enter E material, add the B material of remaining 1/2nd, be sequentially added into G material, F material, D material and A material afterwards；Described crucible is diameter 23 English
Very little, highly 430mm.
The loading method of a kind of single crystal growing furnace silica crucible, including A, B, C, D, E, F, G seven kinds material, A material particle diameter is 50-
80mm, B material particle diameter is 20-50mm, and C material particle diameter is 3-10 mm, and D material particle diameter is 30-50mm, and E material particle diameter is 200-300mm, F
Material particle diameter is 150-200mm, and G material particle diameter is 2-5mm, and wherein A material volume accounts for the 32% of total feeding quantity, and B material volume accounts for total feeding quantity
16%, C material volume accounts for the 6% of total feeding quantity, and D material volume accounts for the 4% of total feeding quantity, and E material volume accounts for the 31% of total feeding quantity, and F expects
Volume accounts for the 5% of total feeding quantity, and G material volume accounts for the 6% of total feeding quantity, according to following charging sequence by uniform for above-mentioned seven kinds of material laying
In adding crucible：It is firstly added 1/2nd of C material, be subsequently adding 1/2nd of B material, add the C of remaining 1/2nd
Material, is subsequently adding E material, adds the B material of remaining 1/2nd, is sequentially added into G material, F material, D material and A material afterwards.
A material is irregularly shaped, and B material is rectangular-shaped, and C material is irregularly shaped, and D material is irregularly shaped, and E material is circle
Column, F material is coniform, and G material is graininess.
The present invention chooses the raw material of seven kinds of different-grain diameters, according to specific charging sequence, in uniform laying adds crucible, with
The crucible of sample ruler cun, feeds according to method disclosed by the invention, it is possible to obtain maximum feeding quantity, once can complete to add
Material, it is not necessary to secondary charging, improves operating efficiency, it is to avoid silicon material in stove is caused secondary pollution and time waste by secondary charging,
Shorten the crystal pulling cycle.
Detailed description of the invention
Embodiment 1
The loading method of a kind of single crystal growing furnace silica crucible, including A, B, C, D, E, F, G seven kinds material, A material particle diameter is 50-90mm, and B expects
Particle diameter is 20-80mm, and C material particle diameter is 3-10 mm, and D material particle diameter is 20-50mm, and E material particle diameter is 200-350mm, and F material particle diameter is
150-220mm, G material particle diameter is 2-5mm, and wherein A material volume accounts for the 32% of total feeding quantity, and B material volume accounts for the 16% of total feeding quantity, C
Material volume accounts for the 6% of total feeding quantity, and D material volume accounts for the 4% of total feeding quantity, and E material volume accounts for the 31% of total feeding quantity, and F material volume accounts for always
The 5% of feeding quantity, G material volume accounts for the 6% of total feeding quantity, according to following charging sequence, uniform for above-mentioned seven kinds of material laying is added crucible
In：It is firstly added 1/2nd of C material, is subsequently adding 1/2nd of B material, add the C material of remaining 1/2nd, then add
Enter E material, add the B material of remaining 1/2nd, be sequentially added into G material, F material, D material and A material afterwards；Described crucible is diameter 23 English
Very little, highly 430mm.
Wherein, A material is irregularly shaped, and B material is rectangular-shaped, and C material is irregularly shaped, and D material is irregularly shaped, E
Material is cylindric, and F material is coniform, and G material is graininess.
A material is virgin polycrystalline silicon；B material is silicon core edge skin material, i.e. remaining edge skin material after the silicon rod line side of cutting into silicon core；C
Material is silicon pellet, remaining small size pellet after i.e. bar is broken, is irregularly irregular following, and C material is irregularly shaped,
It is i.e. the erose material producing in bar shattering process；D material is carbon head material, and i.e. bar-shaped virgin polycrystalline silicon leans on when preparing
The of a relatively high material of graphite clamping petal one end, nearly bottom, carbon content；E material is bar, i.e. bar-shaped virgin polycrystalline silicon；F material is silicon core print
The head material producing when cutting into given shape after the preparation of tailing, i.e. silicon rod and tailing；G material is grain silicon, is to use fluid bed silicon
Alkane method）A kind of granulated polycrystalline silicon producing.
The all polysilicons of above-mentioned seven kinds of raw materials, impurity content be a few millionths to parts per billion, to preparation
The square silicon core product quality impact going out is negligible, and therefore above-mentioned seven kinds of raw materials are only that size and dimension is different, various material
Can exchange, i.e. A material removes virgin polycrystalline silicon, can also is that silicon core edge skin material or silicon pellet or carbon head material or bar or silicon core print tail
Material or grain silicon, B material also can be any one in other several material outside silicon core edge skin material, C material, D material, E material, F material, G
Material is in like manner, it is also possible to be any one in above-mentioned seven kinds material.
Be only a few millionths based on impurity content in above-mentioned various material, even lower, therefore, various material density it is believed that
Identical, the ratio that the volume of various material accounts for total feeding quantity also can be mass ratio.
Embodiment 2
The loading method of a kind of single crystal growing furnace silica crucible, including A, B, C, D, E, F, G seven kinds material, A material particle diameter is 50-80mm, and B expects
Particle diameter is 20-50mm, and C material particle diameter is 3-10 mm, and D material particle diameter is 30-50mm, and E material particle diameter is 200-300mm, and F material particle diameter is
150-200mm, G material particle diameter is 2-5mm, and wherein A material volume accounts for the 32% of total feeding quantity, and B material volume accounts for the 16% of total feeding quantity, C
Material volume accounts for the 6% of total feeding quantity, and D material volume accounts for the 4% of total feeding quantity, and E material volume accounts for the 31% of total feeding quantity, and F material volume accounts for always
The 5% of feeding quantity, G material volume accounts for the 6% of total feeding quantity, according to following charging sequence, uniform for above-mentioned seven kinds of material laying is added crucible
In：It is firstly added 1/2nd of C material, is subsequently adding 1/2nd of B material, add the C material of remaining 1/2nd, then add
Enter E material, add the B material of remaining 1/2nd, be sequentially added into G material, F material, D material and A material afterwards, it is thus achieved that charge is 191kg.
Wherein, A material is irregularly shaped, and B material is rectangular-shaped, and C material is irregularly shaped, and D material is irregularly shaped, E
Material is cylindric, and F material is coniform, and G material is graininess.
A, B, C, D, E, F, G material is respectively virgin polycrystalline silicon, silicon core edge skin material, silicon pellet, carbon head material, bar, silicon core print
Any one of the kind that tailing, grain silicon seven kinds are expected.
Embodiment 3
The loading method of a kind of single crystal growing furnace silica crucible, including A, B, C, D, E, F, G seven kinds material, A material particle diameter is 50-60mm, and B expects
Particle diameter is 20-30mm, and C material particle diameter is 3-5 mm, and D material particle diameter is 30-37mm, and E material particle diameter is 200-240mm, and F material particle diameter is
150-170mm, G material particle diameter is 2-3mm, and wherein A material volume accounts for the 32% of total feeding quantity, and B material volume accounts for the 16% of total feeding quantity, C
Material volume accounts for the 6% of total feeding quantity, and D material volume accounts for the 4% of total feeding quantity, and E material volume accounts for the 31% of total feeding quantity, and F material volume accounts for always
The 5% of feeding quantity, G material volume accounts for the 6% of total feeding quantity, according to following charging sequence, uniform for above-mentioned seven kinds of material laying is added crucible
In：It is firstly added 1/2nd of C material, is subsequently adding 1/2nd of B material, add the C material of remaining 1/2nd, then add
Enter E material, add the B material of remaining 1/2nd, be sequentially added into G material, F material, D material and A material afterwards.
Wherein, A material is irregularly shaped, and B material is rectangular-shaped, and C material is irregularly shaped, and D material is irregularly shaped, E
Material is cylindric, and F material is coniform, and G material is graininess.
A, B, C, D, E, F, G material is respectively virgin polycrystalline silicon, silicon core edge skin material, silicon pellet, carbon head material, bar, silicon core print
Any one of the kind that tailing, grain silicon seven kinds are expected.
Embodiment 4
The loading method of a kind of single crystal growing furnace silica crucible, including A, B, C, D, E, F, G seven kinds material, A material particle diameter is 60-70mm, and B expects
Particle diameter is 30-40mm, and C material particle diameter is 5-7 mm, and D material particle diameter is 37-44mm, and E material particle diameter is 240-270mm, and F material particle diameter is
170-180mm, G material particle diameter is 3-4mm, and wherein A material volume accounts for the 32% of total feeding quantity, and B material volume accounts for the 16% of total feeding quantity, C
Material volume accounts for the 6% of total feeding quantity, and D material volume accounts for the 4% of total feeding quantity, and E material volume accounts for the 31% of total feeding quantity, and F material volume accounts for always
The 5% of feeding quantity, G material volume accounts for the 6% of total feeding quantity, in above-mentioned seven kinds of material being added crucible according to following charging sequence：First
Add 1/2nd of C material, be subsequently adding 1/2nd of B material, add the C material of remaining 1/2nd, be subsequently adding E material,
Add the B material of remaining 1/2nd, be sequentially added into G material, F material, D material and A material afterwards.
Wherein, A material is irregularly shaped, and B material is rectangular-shaped, and C material is irregularly shaped, and D material is irregularly shaped, E
Material is cylindric, and F material is coniform, and G material is graininess.
A, B, C, D, E, F, G material is respectively virgin polycrystalline silicon, silicon core edge skin material, silicon pellet, carbon head material, bar, silicon core print
Any one of the kind that tailing, grain silicon seven kinds are expected.
Embodiment 5
The loading method of a kind of single crystal growing furnace silica crucible, including A, B, C, D, E, F, G seven kinds material, A material particle diameter is 70-80mm, and B expects
Particle diameter is 40-50mm, and C material particle diameter is 7-10 mm, and D material particle diameter is 44-50mm, and E material particle diameter is 270-300mm, and F material particle diameter is
180-200mm, G material particle diameter is 4-5mm, and wherein A material volume accounts for the 32% of total feeding quantity, and B material volume accounts for the 16% of total feeding quantity, C
Material volume accounts for the 6% of total feeding quantity, and D material volume accounts for the 4% of total feeding quantity, and E material volume accounts for the 31% of total feeding quantity, and F material volume accounts for always
The 5% of feeding quantity, G material volume accounts for the 6% of total feeding quantity, according to following charging sequence, uniform for above-mentioned seven kinds of material laying is added crucible
In：It is firstly added 1/2nd of C material, is subsequently adding 1/2nd of B material, add the C material of remaining 1/2nd, then add
Enter E material, add the B material of remaining 1/2nd, be sequentially added into G material, F material, D material and A material afterwards.
Wherein, A material is irregularly shaped, and B material is rectangular-shaped, and C material is irregularly shaped, and D material is irregularly shaped, E
Material is cylindric, and F material is coniform, and G material is graininess.
A, B, C, D, E, F, G material is respectively virgin polycrystalline silicon, silicon core edge skin material, silicon pellet, carbon head material, bar, silicon core print
Any one in tailing, grain silicon seven kinds material.
Comparative example 1-5
The feeding quantity of crucible size, the species of seven kinds of raw materials of A-G, particle diameter and each material is all same as in Example 2, adjusts seven kinds of material
Charging sequence, result is as shown in table 1.
As shown in Table 1, in the case that other conditions are identical, charging sequence disclosed in this invention, it is possible to obtain maximum
Charge.
Embodiment 6-11
When charging, A material, B material, C material, D material are indispensable, except charging species（Seven kinds）Difference, charging sequence and other
Condition is with embodiment 2, when corresponding material does not exists, skips this kind of material, directly adds lower a kind of material.
As shown in Table 2, in the case that other conditions are identical, seven kinds of raw material loading methods of the present invention, can obtain
Obtain maximum charge.
In sum, the present invention chooses the raw material of seven kinds of different-grain diameters, and according to specific charging sequence, uniform laying adds
In crucible, the crucible of same size, feed according to method disclosed by the invention, it is possible to obtain maximum feeding quantity, once
Charging can be completed, it is not necessary to secondary charging, improve operating efficiency, it is to avoid silicon material in stove is caused secondary pollution by secondary charging
With time waste, shorten the crystal pulling cycle.
Above-described is only the preferred embodiment of the present invention, it is noted that for a person skilled in the art,
Under the premise of without departing from general idea of the present invention, can also make some changes and improvements, these also should be considered as the present invention's
Protection domain.
Claims (3)
1. the loading method of a single crystal growing furnace silica crucible, it is characterised in that：Including A, B, C, D, E, F, G seven kinds material, A expects grain
Footpath is 50-90mm, and B material particle diameter is 20-80mm, and C material particle diameter is 3-10 mm, and D material particle diameter is 20-50mm, and E material particle diameter is 200-
350mm, F material particle diameter is 150-220mm, and G material particle diameter is 2-5mm, and wherein A material volume accounts for the 32% of total feeding quantity, and B material volume accounts for
The 16% of total feeding quantity, C material volume accounts for the 6% of total feeding quantity, and D material volume accounts for the 4% of total feeding quantity, and E material volume accounts for total feeding quantity
31%, F material volume accounts for the 5% of total feeding quantity, and G material volume accounts for the 6% of total feeding quantity, according to following charging sequence by above-mentioned seven kinds of material
In uniform laying adds crucible：It is firstly added 1/2nd of C material, be subsequently adding 1/2nd of B material, add remaining two points
One of C material, be subsequently adding E material, add the B material of remaining 1/2nd, be sequentially added into G material, F material, D material and A material afterwards；Institute
Stating crucible is diameter 23 inches, highly 430mm.
2. the loading method of a kind of single crystal growing furnace silica crucible according to claim 1, it is characterised in that：Including A, B, C, D,
E, F, G seven kinds material, A material particle diameter is 50-80mm, and B material particle diameter is 20-50mm, and C material particle diameter is 3-10 mm, and D material particle diameter is 30-
50mm, E material particle diameter is 200-300mm, and F material particle diameter is 150-200mm, and G material particle diameter is 2-5mm, and wherein A material volume accounts for total charging
The 32% of amount, B material volume accounts for the 16% of total feeding quantity, and C material volume accounts for the 6% of total feeding quantity, and D material volume accounts for the 4% of total feeding quantity, E
Material volume accounts for the 31% of total feeding quantity, and F material volume accounts for the 5% of total feeding quantity, and G material volume accounts for the 6% of total feeding quantity, adds according to following
In uniform for above-mentioned seven kinds of material laying is added crucible by material order：It is firstly added 1/2nd of C material, be subsequently adding two points of B material
One of, add the C material of remaining 1/2nd, be subsequently adding E material, add the B material of remaining 1/2nd, be sequentially added into afterwards
G material, F material, D material and A material.
3. the loading method of a kind of single crystal growing furnace silica crucible according to claim 1 or claim 2, it is characterised in that：A material is irregular
Shape, B material is rectangular-shaped, and C material is irregularly shaped, and D material is irregularly shaped, and E material is cylindric, and F material is coniform, G
Material is graininess.
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| CN201610745876.8A CN106435713B (en) | 2016-08-29 | 2016-08-29 | A kind of loading method of single crystal growing furnace silica crucible |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1333844A (en) * | 1999-01-13 | 2002-01-30 | Memc电子材料有限公司 | Process of stacking and melting polycrystalline silicon of high quality single crystal production |
| JP2009274921A (en) * | 2008-05-15 | 2009-11-26 | Sumco Corp | Production method of silicon single crystal |
| CN102732945A (en) * | 2012-04-13 | 2012-10-17 | 英利能源（中国）有限公司 | Loading method for monocrystaline silicon ingot casting |
| CN103233264A (en) * | 2013-05-03 | 2013-08-07 | 江苏海翔化工有限公司 | Silicon material melting heating process capable of preventing silicon leakage in quartz crucible in Czochralski method |
| CN105239151A (en) * | 2015-09-10 | 2016-01-13 | 上海超硅半导体有限公司 | Material loading method of polycrystal silicon |
-
2016
- 2016-08-29 CN CN201610745876.8A patent/CN106435713B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1333844A (en) * | 1999-01-13 | 2002-01-30 | Memc电子材料有限公司 | Process of stacking and melting polycrystalline silicon of high quality single crystal production |
| JP2009274921A (en) * | 2008-05-15 | 2009-11-26 | Sumco Corp | Production method of silicon single crystal |
| CN102732945A (en) * | 2012-04-13 | 2012-10-17 | 英利能源（中国）有限公司 | Loading method for monocrystaline silicon ingot casting |
| CN103233264A (en) * | 2013-05-03 | 2013-08-07 | 江苏海翔化工有限公司 | Silicon material melting heating process capable of preventing silicon leakage in quartz crucible in Czochralski method |
| CN105239151A (en) * | 2015-09-10 | 2016-01-13 | 上海超硅半导体有限公司 | Material loading method of polycrystal silicon |
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