CN105692624A - Method for recycling silicon material in waste cutting serous fluid of silicon slice cut by diamond wire - Google Patents

Method for recycling silicon material in waste cutting serous fluid of silicon slice cut by diamond wire Download PDF

Info

Publication number
CN105692624A
CN105692624A CN201610164160.9A CN201610164160A CN105692624A CN 105692624 A CN105692624 A CN 105692624A CN 201610164160 A CN201610164160 A CN 201610164160A CN 105692624 A CN105692624 A CN 105692624A
Authority
CN
China
Prior art keywords
silicon
diamond wire
serosity
gives
wafer cut
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN201610164160.9A
Other languages
Chinese (zh)
Other versions
CN105692624B (en
Inventor
董欢
吴周友
袁厚臣
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SUZHOU GCL PHOTOVOLTAIC TECHNOLOGY Co Ltd
Original Assignee
SUZHOU GCL PHOTOVOLTAIC TECHNOLOGY Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SUZHOU GCL PHOTOVOLTAIC TECHNOLOGY Co Ltd filed Critical SUZHOU GCL PHOTOVOLTAIC TECHNOLOGY Co Ltd
Priority to CN201610164160.9A priority Critical patent/CN105692624B/en
Publication of CN105692624A publication Critical patent/CN105692624A/en
Application granted granted Critical
Publication of CN105692624B publication Critical patent/CN105692624B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00Silicon; Compounds thereof
    • C01B33/02Silicon
    • C01B33/021Preparation
    • C01B33/023Preparation by reduction of silica or free silica-containing material
    • C01B33/025Preparation by reduction of silica or free silica-containing material with carbon or a solid carbonaceous material, i.e. carbo-thermal process

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Silicon Compounds (AREA)
  • Processing Of Stones Or Stones Resemblance Materials (AREA)

Abstract

The invention relates to a method for recycling a silicon material in waste cutting serous fluid of a silicon slice cut by a diamond wire. The method for recycling the silicon material in the waste cutting serous fluid of the silicon slice cut by the diamond wire comprises the following steps of carrying out solid-liquid separation on the waste cutting serous fluid of the silicon slice cut by the diamond wire, and reserving liquid, so as to obtain silicon powder suspension liquid; carrying out concentration treatment on the silicon powder suspension liquid, so as to obtain concentrated silicon powder suspension liquid; carrying out the solid-phase separation on the concentrated silicon powder suspension liquid, and reserving a solid, so as to obtain silicon sand; pressing the silicon sand, so as to obtain a silicon pressed body; mixing the silicon pressed body with silicon clad of which the temperature is more than 1,400 DEG C in a silicon ingot casting technique, carrying out smelting on an obtained mixture, and then obtaining industrial silicon. In the method for recycling the silicon material in the waste cutting serous fluid of the silicon slice cut by the diamond wire, the silicon material in the waste cutting serous fluid of the silicon slice cut by the diamond wire is used as a raw material; the industrial silicon is obtained through a series of treatment processes; the resource utilization of the silicon material in the waste cutting serous fluid is realized; the waste of a resource is avoided.

Description

Silicon wafer cut by diamond wire gives up and cuts the recovery method of silicon material in serosity
Technical field
The present invention relates to the process field of useless cutting serosity, particularly relating to a kind of silicon wafer cut by diamond wire and give up the recovery method of silicon material in cutting serosity。
Background technology
At present, in the silicon chip cutting technique of field of solar energy, solar level cell silicon chip is silico briquette or silicon rod cutting to be formed by multi-line cutting machine, and the development trend according to current industry, diamond wire multi-wire saw technology will become the main flow of following multi-wire saw。But, in the diamond wire cutting process of monocrystal silicon or polysilicon, the silica flour produced during diamond wire cutting silicon rod deposits in cutting serosity together with other impurity, forms useless cutting serosity, and its cutting ability is substantially reduced。The purity of silica flour produced during cutting silicon rod is higher, but comparatively in small, broken bits, therefore, as easy as rolling off a log silica flour is dealt with improperly, causes the waste of resource。
Summary of the invention
Based on this, it is necessary to the problem causing the wasting of resources for traditional silica flour is dealt with improperly, it is provided that a kind of silicon wafer cut by diamond wire avoiding the wasting of resources gives up the recovery method of silicon material in cutting serosity。
A kind of silicon wafer cut by diamond wire gives up and cuts the recovery method of silicon material in serosity, comprises the steps:
Silicon wafer cut by diamond wire useless cutting serosity is carried out solid-liquid separation, and retains liquid, obtain silica flour suspension;
Described silica flour suspension is carried out concentration, the silica flour suspension after being concentrated;
Silica flour suspension after described concentration is carried out solid-liquid separation, and retains solid, obtain silica sand;
Described silica sand is suppressed, obtains silicon press body silicon press body;
And described press body silicon press body is mixed with the silicon bag more than 1400 DEG C of the temperature in silicon casting ingot process, obtain industrial silicon after smelting。
Above-mentioned silicon wafer cut by diamond wire give up cutting serosity in silicon material recovery method in, give up the silicon material in cutting serosity as raw material using silicon wafer cut by diamond wire, industrial silicon is obtained, it is achieved that the recycling of silicon material in useless cutting serosity, it is to avoid the waste of resource by a series of processing procedures。
Additionally, also avoid the problem of environmental pollution, improve the production capacity of enterprise, reduce production cost, and the progress of China's industrial silicon metallurgical technology and the development of economic society will be had no small impetus。
Wherein in an embodiment, also comprise the steps:
Described industrial silicon is pulverized, until the particle size of described industrial silicon is 50mm~100mm。
Wherein in an embodiment, the operation that described silica flour suspension carries out concentration is: described silica flour suspension passes into concentrating and separating process device and processes。
Wherein in an embodiment, the solid content of the silica flour suspension after described concentration is 6%~8%。
Wherein in an embodiment, the operation that the silica flour suspension after described concentration carries out solid-liquid separation is: adopt the mode of filter press that the silica flour suspension after described concentration is carried out solid-liquid separation。
Wherein in an embodiment, the moisture content of described silica sand is 50%~70%。
Wherein in an embodiment, the operation that described silica sand is suppressed is: adopt ball pressure equipment that described silica sand is performed twice at ball pressure。
Wherein in an embodiment, the particle size of described silicon press body is 40mm~70mm。
Wherein in an embodiment, it is: described silicon press body is added in mineral hot furnace by the mode of feeding mix the operation that described silicon press body carries out smelting with the silicon bag more than 1400 DEG C of the temperature in silicon casting ingot process in mineral hot furnace and smelt。
Wherein in an embodiment, the mass ratio of described silicon press body and described silicon bag is 1:8~1:12。
Accompanying drawing explanation
Fig. 1 is that the silicon wafer cut by diamond wire of an embodiment gives up the flow chart of the recovery method of silicon material in cutting serosity。
Detailed description of the invention
Understandable for enabling the above-mentioned purpose of the present invention, feature and advantage to become apparent from, below in conjunction with accompanying drawing, the specific embodiment of the present invention is described in detail。Elaborate a lot of detail in the following description so that fully understanding the present invention。But the present invention can implement being much different from alternate manner described here, and those skilled in the art can do similar improvement when without prejudice to intension of the present invention, therefore the present invention is by the restriction of following public specific embodiment。
The silicon wafer cut by diamond wire of one embodiment gives up and cuts the flow chart of the recovery method of silicon material in serosity, as it is shown in figure 1, comprise the steps:
S10, cutting serosity that silicon wafer cut by diamond wire is given up carry out solid-liquid separation, and retain liquid, obtain silica flour suspension。
Owing to containing ethers dispersant in silicon wafer cut by diamond wire useless cutting serosity, therefore, silica flour can be suspended in useless cutting serosity。The impurity such as bortz powder and other bulk silicon chip, metallic particles that particle size is bigger then can precipitate, therefore, the useless cutting after serosity carries out solid-liquid separation of silicon wafer cut by diamond wire can be removed the impurity such as bortz powder and bulk silicon chip, metallic particles。
The solid-liquid separation of step S10 can adopt the mode of precipitation。
S20, silica flour suspension to step S10 carry out concentration, the silica flour suspension after being concentrated。
The operation that silica flour suspension carries out concentration is: silica flour suspension passes into concentrating and separating process device and processes。After concentration, the solid content of the silica flour suspension after the concentration obtained is about 6%~8%。Now, in the solid of the silica flour suspension after concentration the content of silica flour more than 90%。
S30, the silica flour suspension after the concentration of step S20 is carried out solid-liquid separation, and retain solid, obtain silica sand。
The operation that silica flour suspension after concentration carries out solid-liquid separation is: adopt the mode of filter press that the silica flour suspension after concentration is carried out solid-liquid separation。Filter press can remove substantial amounts of moisture, and the moisture content of the silica sand obtained is about 50%~70%。In silica sand, the content of silicon is also greater than 90%。
S40, silica sand to step S30 are suppressed, and obtain silicon press body。
Owing to the step S30 silica sand obtained is particle state, its particle size is less, need to be compressed into the silicon press body of larger particle size, it is simple to subsequent operation。Its particle size is preferably 40mm~70mm。
In one preferably embodiment, the operation that silica sand is suppressed is: adopt ball pressure equipment that silica sand performs twice at ball pressure。The silicon press body obtained is silicon ball。In a preferred embodiment, the diameter of silicon ball is 50mm。
It should be noted that the shape of silicon press body is not limited to above-mentioned spherical, also can be other arbitrary shapes, for instance square block isotactic then shape, certainly, it also can be that other are irregularly shaped, as long as not affecting subsequent operation。
S50, the silicon press body of step S40 is smelted, obtain industrial silicon afterwards。
In one preferably embodiment, the operation being undertaken smelting by silicon press body is: add in mineral hot furnace by silicon press body by the mode of feeding, mixes with the silicon bag more than 1400 DEG C of the temperature in silicon casting ingot process in mineral hot furnace and smelts。
Silicon bag is the intermediate in industrial silicon production process, is specially after silicon dioxide is reduced agent cladding and carries out reacted product。Reducing agent can be carbon。
In one preferably embodiment, the mass ratio of silicon press body and silicon bag is 1:8~1:12。Owing to the quality of silicon bag is much larger than the quality of silicon press body, and the temperature silicon bag more than 1400 DEG C is molten condition in mineral hot furnace, therefore, after silicon press body adds in mineral hot furnace by the mode of feeding, the silicon press body of solid-state is quickly melted, and lumps together with silicon bag。Be conducive to smelting。
After above-mentioned process, the particle size of the industrial silicon obtained is relatively big, up to about 1mm。
Therefore, above-mentioned silicon wafer cut by diamond wire gives up and cuts the recovery method of silicon material in serosity, may also include the steps of: the industrial silicon to step S50 and pulverizes, until the particle size of industrial silicon is 50mm~100mm。Purpose is to make the particle diameter of industrial silicon reach ingot casting standard。The industrial silicon that can be up to ingot casting standard afterwards carries out packing to deposit。
After the process of each step above-mentioned, in the industrial silicon finally given, the purity of silicon is higher, up to more than 95%。
Above-mentioned silicon wafer cut by diamond wire give up cutting serosity in silicon material recovery method in, give up the silicon material in cutting serosity as raw material using silicon wafer cut by diamond wire, industrial silicon is obtained, it is achieved that the recycling of silicon material in useless cutting serosity, it is to avoid the waste of resource by a series of processing procedures。
Additionally, also avoid the problem of environmental pollution, improve the production capacity of enterprise, reduce production cost, and the progress of China's industrial silicon metallurgical technology and the development of economic society will be had no small impetus。
Each technical characteristic of embodiment described above can combine arbitrarily, for making description succinct, the all possible combination of each technical characteristic in above-described embodiment is not all described, but, as long as the combination of these technical characteristics is absent from contradiction, all it is considered to be the scope that this specification is recorded。
Embodiment described above only have expressed the several embodiments of the present invention, and it describes comparatively concrete and detailed, but can not therefore be construed as limiting the scope of the patent。It should be pointed out that, for the person of ordinary skill of the art, without departing from the inventive concept of the premise, it is also possible to making some deformation and improvement, these broadly fall into protection scope of the present invention。Therefore, the protection domain of patent of the present invention should be as the criterion with claims。

Claims (10)

1. a silicon wafer cut by diamond wire gives up and cuts the recovery method of silicon material in serosity, it is characterised in that comprise the steps:
Silicon wafer cut by diamond wire useless cutting serosity is carried out solid-liquid separation, and retains liquid, obtain silica flour suspension;
Described silica flour suspension is carried out concentration, the silica flour suspension after being concentrated;
Silica flour suspension after described concentration is carried out solid-liquid separation, and retains solid, obtain silica sand;
Described silica sand is suppressed, obtains silicon press body;
And described silicon press body is smelted, obtain industrial silicon afterwards。
2. silicon wafer cut by diamond wire according to claim 1 gives up and cuts the recovery method of silicon material in serosity, it is characterised in that also comprise the steps:
Described industrial silicon is pulverized, until the particle size of described industrial silicon is 50mm~100mm。
3. silicon wafer cut by diamond wire according to claim 1 gives up and cuts the recovery method of silicon material in serosity, it is characterised in that the operation that described silica flour suspension carries out concentration is: described silica flour suspension passes into concentrating and separating process device and processes。
4. silicon wafer cut by diamond wire according to claim 1 gives up and cuts the recovery method of silicon material in serosity, it is characterised in that the solid content of the silica flour suspension after described concentration is 6%~8%。
5. silicon wafer cut by diamond wire according to claim 1 gives up and cuts the recovery method of silicon material in serosity, it is characterized in that, the operation that the silica flour suspension after described concentration carries out solid-liquid separation is: adopt the mode of filter press that the silica flour suspension after described concentration is carried out solid-liquid separation。
6. silicon wafer cut by diamond wire according to claim 1 gives up and cuts the recovery method of silicon material in serosity, it is characterised in that the moisture content of described silica sand is 50%~70%。
7. silicon wafer cut by diamond wire according to claim 1 gives up and cuts the recovery method of silicon material in serosity, it is characterised in that the operation that described silica sand is suppressed is: adopt ball pressure equipment that described silica sand is performed twice at ball pressure。
8. silicon wafer cut by diamond wire according to claim 1 gives up and cuts the recovery method of silicon material in serosity, it is characterised in that the particle size of described silicon press body is 40mm~70mm。
9. silicon wafer cut by diamond wire according to claim 1 gives up and cuts the recovery method of silicon material in serosity, it is characterized in that, it is: described silicon press body is added in mineral hot furnace by the mode of feeding mix the operation that described silicon press body carries out smelting with the silicon bag more than 1400 DEG C of the temperature in silicon casting ingot process in mineral hot furnace and smelt。
10. silicon wafer cut by diamond wire according to claim 1 gives up and cuts the recovery method of silicon material in serosity, it is characterised in that the mass ratio of described silicon press body and described silicon bag is 1:8~1:12。
CN201610164160.9A 2016-03-22 2016-03-22 The recovery method of silicon material in the useless cutting slurries of silicon wafer cut by diamond wire Active CN105692624B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201610164160.9A CN105692624B (en) 2016-03-22 2016-03-22 The recovery method of silicon material in the useless cutting slurries of silicon wafer cut by diamond wire

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201610164160.9A CN105692624B (en) 2016-03-22 2016-03-22 The recovery method of silicon material in the useless cutting slurries of silicon wafer cut by diamond wire

Publications (2)

Publication Number Publication Date
CN105692624A true CN105692624A (en) 2016-06-22
CN105692624B CN105692624B (en) 2018-08-21

Family

ID=56232407

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201610164160.9A Active CN105692624B (en) 2016-03-22 2016-03-22 The recovery method of silicon material in the useless cutting slurries of silicon wafer cut by diamond wire

Country Status (1)

Country Link
CN (1) CN105692624B (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106672977A (en) * 2016-12-26 2017-05-17 平顶山易成新材料有限公司 Method for preparing metallic silicon by utilizing silicon scraps cut by solar silicon wafer
CN106865552A (en) * 2016-10-26 2017-06-20 东北大学 A kind of method that high-purity silicon powder is reclaimed in cutting waste material slurry from crystalline silicon
CN108373157A (en) * 2018-03-22 2018-08-07 宁夏东梦能源股份有限公司 2N grades of low borosilicate technologies are produced using Buddha's warrior attendant wire cutting waste silicon powder and technique is integrated
CN108383123A (en) * 2018-03-20 2018-08-10 山东大海新能源发展有限公司 The processing of waste liquid utilizes method and system after a kind of Buddha's warrior attendant wire cutting

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102275926A (en) * 2011-05-05 2011-12-14 王楚雯 Recovery method of silicon powder
CN102351184A (en) * 2011-07-18 2012-02-15 矽明科技股份有限公司 Method for recovering silicon carbide, high-purity silicon and dispersion liquid from silicon material linear cutting waste mortar
CN102642837A (en) * 2012-04-27 2012-08-22 河南新大新材料股份有限公司 Method for recycling polysilicon from silicon wafer waste slurry cut by diamond wire saw
CN102642835A (en) * 2012-04-19 2012-08-22 镇江环太硅科技有限公司 Method for recovering silicon material from waste materials in cutting crystalline silicon by diamond wire

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102275926A (en) * 2011-05-05 2011-12-14 王楚雯 Recovery method of silicon powder
CN102351184A (en) * 2011-07-18 2012-02-15 矽明科技股份有限公司 Method for recovering silicon carbide, high-purity silicon and dispersion liquid from silicon material linear cutting waste mortar
CN102642835A (en) * 2012-04-19 2012-08-22 镇江环太硅科技有限公司 Method for recovering silicon material from waste materials in cutting crystalline silicon by diamond wire
CN102642837A (en) * 2012-04-27 2012-08-22 河南新大新材料股份有限公司 Method for recycling polysilicon from silicon wafer waste slurry cut by diamond wire saw

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106865552A (en) * 2016-10-26 2017-06-20 东北大学 A kind of method that high-purity silicon powder is reclaimed in cutting waste material slurry from crystalline silicon
CN106865552B (en) * 2016-10-26 2019-04-26 东北大学 A method of high-purity silicon powder is recycled from the cutting waste material of crystalline silicon slurry
CN106672977A (en) * 2016-12-26 2017-05-17 平顶山易成新材料有限公司 Method for preparing metallic silicon by utilizing silicon scraps cut by solar silicon wafer
CN106672977B (en) * 2016-12-26 2019-02-15 平顶山易成新材料有限公司 A method of metallic silicon is prepared using the useless silicon material that solar silicon wafers are cut
CN108383123A (en) * 2018-03-20 2018-08-10 山东大海新能源发展有限公司 The processing of waste liquid utilizes method and system after a kind of Buddha's warrior attendant wire cutting
CN108373157A (en) * 2018-03-22 2018-08-07 宁夏东梦能源股份有限公司 2N grades of low borosilicate technologies are produced using Buddha's warrior attendant wire cutting waste silicon powder and technique is integrated

Also Published As

Publication number Publication date
CN105692624B (en) 2018-08-21

Similar Documents

Publication Publication Date Title
CN105523557B (en) A kind of method of crystalline silicon diamond wire saw slug recycling
CN104176737B (en) Method for recovering silicon powder from cut mortar waste
CN105692624A (en) Method for recycling silicon material in waste cutting serous fluid of silicon slice cut by diamond wire
CN104229896B (en) A kind of alkali leaching desilication method of manganese ore
CN101792142A (en) Method for recovering polysilicon ingots, carborundum powder and polyethylene glycol from cutting waste mortar
CN106882814B (en) The method for preparing industrial metasilicate with discarded copper and sulfide tailings
KR20130056992A (en) Method for treating the waste sludge of silicon wafer and fe-si-sic briquette thereof
CN106115714A (en) A kind of preparation method of metallic silicon
CN102886310A (en) Method for separating scandium concentrate from bayan obo tailings
CN103695631A (en) Mineral separation and enrichment process for ferrotitanium oxide ore
CN102329970B (en) Method for producing ferrotungsten with tungsten carbide obtained by tungsten-containing waste processing as raw material
CN103395788B (en) Ingot-casting silicon powder with controllable grain size as well as preparation method and application thereof
Wang et al. Silicon recovery from silicon sawing waste by removal of SiC impurity via CaO–SiO2–Na2O slag absorption
CN102642837B (en) Method for recycling polysilicon from silicon wafer waste slurry cut by diamond wire saw
CN105385807A (en) Method for manufacturing silicon and carbon composite balls through waste mortar generated during silicon slice cutting and application of silicon and carbon composite ball
CN105274619B (en) It is a kind of to strengthen the method for removing boron in metallurgical grade silicon
CN103691573B (en) A kind of Antimony Oxide Ores and quartzy flotation separation method
CN109504853A (en) A kind of pneumatic steelmaking exothermic mixture and preparation method thereof
CN102746936A (en) Recycling purification method for carborundum powder in silicon slice cutting waste liquid
JP2017534759A (en) Briquette manufacturing method and briquette manufactured using the same
CN102633515A (en) Magnesium-forsterite synthetic sand and preparation method thereof
CN114772602A (en) Method for improving yield of silicon metal prepared by smelting silicon mud obtained by diamond wire cutting
Syvertsen et al. Remelting and purification of Si-kerf for PV-wafers
CN106115716B (en) The method that silica flour is purified from sintering scrap silicon
CN111252769A (en) Preparation method of solar polycrystalline silicon

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant