CN106435259A - Copper-nickel alloy powder for ultralow-resistance chip resistor - Google Patents
Copper-nickel alloy powder for ultralow-resistance chip resistor Download PDFInfo
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- CN106435259A CN106435259A CN201610913534.2A CN201610913534A CN106435259A CN 106435259 A CN106435259 A CN 106435259A CN 201610913534 A CN201610913534 A CN 201610913534A CN 106435259 A CN106435259 A CN 106435259A
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- powder
- adnic
- ultralow
- resistance
- wafer resistor
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- 239000000843 powder Substances 0.000 title claims abstract description 59
- 229910045601 alloy Inorganic materials 0.000 title claims abstract description 14
- 239000000956 alloy Substances 0.000 title claims abstract description 14
- 229910000570 Cupronickel Inorganic materials 0.000 title abstract description 5
- YOCUPQPZWBBYIX-UHFFFAOYSA-N copper nickel Chemical compound [Ni].[Cu] YOCUPQPZWBBYIX-UHFFFAOYSA-N 0.000 title abstract 4
- 229910052748 manganese Inorganic materials 0.000 claims description 10
- 229910052742 iron Inorganic materials 0.000 claims description 9
- 229910000906 Bronze Inorganic materials 0.000 claims description 7
- 239000010974 bronze Substances 0.000 claims description 7
- 238000009833 condensation Methods 0.000 claims description 7
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 claims description 7
- 229910052759 nickel Inorganic materials 0.000 claims description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 5
- 239000001301 oxygen Substances 0.000 claims description 5
- 229910052760 oxygen Inorganic materials 0.000 claims description 5
- 239000012535 impurity Substances 0.000 claims description 4
- 239000006104 solid solution Substances 0.000 claims description 4
- 229910052799 carbon Inorganic materials 0.000 claims description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 2
- 230000008018 melting Effects 0.000 claims description 2
- 238000002844 melting Methods 0.000 claims description 2
- 239000010408 film Substances 0.000 abstract description 20
- 238000000034 method Methods 0.000 abstract description 19
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 abstract description 14
- 238000009826 distribution Methods 0.000 abstract description 4
- 230000008020 evaporation Effects 0.000 abstract description 4
- 238000001704 evaporation Methods 0.000 abstract description 4
- 238000007639 printing Methods 0.000 abstract description 4
- 239000010409 thin film Substances 0.000 abstract description 2
- 238000012216 screening Methods 0.000 abstract 1
- 239000010949 copper Substances 0.000 description 13
- 238000002360 preparation method Methods 0.000 description 11
- 239000011572 manganese Substances 0.000 description 10
- 239000000463 material Substances 0.000 description 10
- 238000005516 engineering process Methods 0.000 description 7
- 229910052802 copper Inorganic materials 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 229910000881 Cu alloy Inorganic materials 0.000 description 5
- 238000007740 vapor deposition Methods 0.000 description 5
- 239000003963 antioxidant agent Substances 0.000 description 4
- 230000003078 antioxidant effect Effects 0.000 description 4
- HPDFFVBPXCTEDN-UHFFFAOYSA-N copper manganese Chemical compound [Mn].[Cu] HPDFFVBPXCTEDN-UHFFFAOYSA-N 0.000 description 4
- 238000007650 screen-printing Methods 0.000 description 4
- 230000001276 controlling effect Effects 0.000 description 3
- 238000005260 corrosion Methods 0.000 description 3
- 230000007797 corrosion Effects 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000005245 sintering Methods 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910001111 Fine metal Inorganic materials 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000000889 atomisation Methods 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000000320 mechanical mixture Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
- 238000007873 sieving Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C9/00—Alloys based on copper
- C22C9/06—Alloys based on copper with nickel or cobalt as the next major constituent
-
- B22F1/0003—
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F9/00—Making metallic powder or suspensions thereof
- B22F9/02—Making metallic powder or suspensions thereof using physical processes
- B22F9/12—Making metallic powder or suspensions thereof using physical processes starting from gaseous material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/02—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
- H01B1/026—Alloys based on copper
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/003—Thick film resistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Non-Adjustable Resistors (AREA)
- Apparatuses And Processes For Manufacturing Resistors (AREA)
Abstract
The invention provides copper-nickel alloy powder for an ultralow-resistance chip resistor. The copper-nickel alloy powder is characterized by being prepared from following components of 35-45 wt% of Ni, smaller than 1 wt% of Mn, smaller than 1 wt% of Fe and the balance Cu. The grain diameter of the copper-nickel alloy powder is uniform, and the average grain diameter ranges from 0.3 micrometer to 3 micrometers; and through further screening and high-precision gas phase classification, granularity distribution of the powder can be adjusted and controlled, upgrading of the printing process of a thick film of a low chip resistor can be promoted, the thickness is close to that achieved through a thin film evaporation process, and therefore the electrical performance of the ultralow-resistance chip resistor is improved.
Description
Technical field
The present invention relates to wafer resistor technical field is and in particular to a kind of ultralow resistance (below resistance 500m Ω) chip
Resistor adnic powder.
Background technology
Wafer resistor is one of the most frequently used electronic devices and components, has the property controlling direct current or alternating current.Using this
Property, resistor reduces voltage inside circuit, or holding electric current is constant, and its resistance substantially complies with Ohm rule, uses simultaneously
The high material of electrical conductivity and the low material of electrical conductivity and realize resistance value, SiO2, RuO2, Cu alloy etc. is used as Chip-R
The dominant resistance material of device, can produce the product line large-scale application such as high resistance, low resistance, super-low resistance in mobile phone,
On the communication apparatus such as computer, commercial value is huge.
Ultralow resistance alloy Chip-R is also called current sense resistor, is applied to the sampling of electric current in circuit, feedback electricity
In road change electric current so that further control or impact electric current change, be mainly used in power supply unit, inverter/
Converter, lithium battery protection board, automobile interlock circuit, notebook, computer main board and LED driver, LCD control panel etc..Cu
Alloy is its main material, and this series material has high power electrical characteristic, high-purity, high heat conduction, Low Drift Temperature and high temperature resistant
The advantages of.Copper alloy resistance as electrical current carriers, resistance precisely, temperature stability, the security of product, stability apparently higher than
Common ceramic resistor, simultaneously the thermal conductivity of metal be also it with other big advantages of resistance one, particularly in power supply and other
In the application of Related product, when the dash current of moment, short circuit current or pulse current generation, first-selected conduct electricity regarded by copper alloy
Flow medium is detecting electric current.
At present, in ultralow resistance wafer resistor resistance material, copper alloy is main resistance material, Taiwan state is huge,
Low-resistance is mainly prepared with thick film printing technique and film vapor deposition technology by universe, Korea S three magnitude main wafer resistor manufacturer
Value wafer resistor.The copper alloy powder that thick film screen printing is used mainly is produced by atomization, mechanical crushing method, powder average grain diameter
Excessive (5-15 μm) has a strong impact on the printing performance of resistance slurry, and film thickness is larger, and resistance value precision and stability will
Poor, hinder the miniaturization of wafer resistor, become more meticulous development；Film vapor deposition technique can solve wafer resistor
Miniaturization, become more meticulous problem, and resistance precision is high, but film thickness thin (less than 1 μm), seriously limit possible resistance value
Scope, is easier to aoxidize additionally, due to relatively thin sedimentary.Film resistor easily self-reversal under humid conditions, immersion encapsulated
Cheng Zhong, water vapour can bring impurity into, and the chemical attack of generation can be applied in low-voltage direct and be caused film resistor to open a way in a few houres.
Therefore high value film resistor degradation ratio is very high.In addition, film vapor deposition technique equipment needed thereby is expensive, it is thick film screen printing equipment
5 times, production cost is high, and accepted product percentage is relatively low.
Application number 201510118141.8 is also reported for work《For preparing wafer resistor front, backplate copper manganese closes
Bronze》It is characterised in that：It is grouped into by the group of following mass percent, Mn 10-30wt%, Cu 70-90wt%；And should
The average grain diameter of alloy is 0.5-5 μm, oxygen content≤5000ppm, impurity content≤600ppm, fusing point are 870-950 DEG C, and Mn is former
Son is solidly soluted in Cu lattice, forms Elemental redistribution uniform copper manganese solid solution alloy.Cupromanganese powder is also to be applied to low-resistance
In value wafer resistor resistance material, but its stability is poor, and technology controlling and process is responsible for, and copper Mn series alloy powder surface needs to apply simultaneously
Antioxidant leads to production cost high；Additionally, the resistive linearity of cupromanganese powder is not good, resistivity controls to be responsible for, and uses
Temperature range is narrow, and sintering process is high for the control standard of atmosphere oxygen content.
Content of the invention
The technical problem to be solved is to provide one kind to be used for thick film print technology, can promote low wafer resistor
The upgrading of thick film screen printing processing procedure is simultaneously close to the film thickness of film vapor deposition technique, thus it is electrical to improve ultralow resistance wafer resistor
Can, solving resistance material for ultralow resistance wafer resistor of new generation provides the ultralow resistance wafer resistor of new solution
Use adnic powder.
The technical solution adopted in the present invention is：A kind of ultralow resistance wafer resistor adnic powder, it by with
The following group is grouped into：Ni 35-45wt%, Mn ＜ 1wt%, Fe ＜ 1wt%, balance of Cu.
Preferably, described ultralow resistance wafer resistor adnic powder, its Ni composed of the following components：
38-40wt%, Mn0.1-0.8wt%, Fe0.1-0.8wt%, balance of Cu.
Above-mentioned ultralow resistance wafer resistor adnic powder, is prepared from by vaporize-condensation law, its Ni, Fe,
Mn is solidly soluted in the lattice of Cu, forms Elemental redistribution uniform solid solution alloy powder.
Above-mentioned ultralow resistance wafer resistor adnic powder, its average grain diameter is 0.3-3 μm.
Above-mentioned ultralow resistance wafer resistor adnic powder, its oxygen content≤4000ppm.
Above-mentioned ultralow resistance wafer resistor adnic powder, its carbon content≤800ppm.
Above-mentioned ultralow resistance wafer resistor adnic powder, its impurity content≤500ppm.
Above-mentioned ultralow resistance wafer resistor adnic powder, it does not apply antioxidant, any surface finish, dispersion
Property is preferable.
Above-mentioned ultralow resistance wafer resistor adnic powder, its melting range is 1254-1352 DEG C.
Nickel in the present invention can improve the various characteristic of corronil, such as increase alloyed powder corrosion resistance, heat resistance, improve resistance
Temperature coefficient, and average grain diameter is 0.3-3 μm, and it has, and printing is excellent, resistive linearity is good, using temperature range width, resistance to
Corrosion is excellent, heat resistance is strong, stable temperature-coefficient of electrical resistance and cheap price.
The present invention controls Ni 35-45wt% within the scope of this, and Ni content is in this scope so that this resistance alloys
Temperature coefficient is in the range of lower value, and that is, to vary with temperature amplitude little for resistance.
A small amount of Mn ＜ 1wt%, the Fe ＜ 1wt% adding of the present invention, after adding a small amount of Mn, Fe, the resistance temperature system of alloy
Number is further reduced to 0, puies forward heavy alloyed heat resistance simultaneously.
Advantages of the present invention：
1. the adnic powder of the present invention, copper and mickel is not simple mechanical mixture, but Ni, Fe, Mn are solidly soluted into Cu
Lattice in, form solid solution alloy, fusing point is lower than Cu and Ni of simple metal, advantageously reduce ultralow resistance wafer resistor work
Metal sintering temperature in skill.
2. the adnic powder of the present invention, particle diameter is more uniform, and average grain diameter is 0.3-3 μm, through sieving further
With the classification of high accuracy gas phase, the size distribution of powder can be regulated and controled, the upgrading of low wafer resistor thick film screen printing processing procedure can be promoted,
And close to the thickness of film vapor deposition technique, thus improve ultralow resistance wafer resistor electrical property.
3. the cupro-nickel syzygy bronze of the present invention prepares gained using vaporize-condensation law, and degree of crystallinity is high, can improve corronil
The oxidation resistance temperature of powder, without clad surface antioxidant, corrosion resistance, heat-resist, using temperature range width, resistance temperature system
Number is little, and it is zero that absolute value approaches.
6. the adnic powder of the present invention, using plasma heating evaporation-condensation method, can industrialized production, produce
Cost is relatively low, function admirable, and solving resistance material for ultralow resistance wafer resistor of new generation provides new solution.
7. adnic powder compares copper manganese powder two advantages：First, adnic powder compares cupromanganese powder more
It is stable, technology controlling and process is more simple, adnic powder surface need not apply antioxidant, therefore adnic powder life simultaneously
Produce cost lower；Second, adnic resistive linearity is good compared with cupromanganese powder, and resistivity control is more simple, and uses
Wider range (highest can be to 400 DEG C), sintering process is for the control standard relatively copper manganese powder bottom of atmosphere oxygen content.
Brief description：
Fig. 1 is 0.6 μm of spherical adnic powder electron microscope of present invention physical vaporous deposition preparation.
Fig. 2 is 2 μm of spherical adnic powder electron microscopes of present invention physical vaporous deposition preparation.
Fig. 3 is the distribution map of the Cu element of adnic powder of present invention vaporize-condensation law preparation.
Fig. 4 is the distribution map with Ni element of the adnic powder of present invention vaporize-condensation law preparation.
Specific embodiment：
Describe the present invention in detail below by embodiment, but the present invention is not limited solely to following examples.
Embodiment 1, the preparation of the Cu59Ni40Mn0.5Fe0.5 corronil powder of 2 μm of particle diameter.
First, the molar ratio according to required above-mentioned adnic, the quality of deployed Cu, Ni, Mn and Fe, place sense
Answer and in stove, be smelted into adnic.
Alloy block is put in the crucible of high-temperature metal evaporimeter, installs plasma producing apparatus and (specifically refer to
ZL201110119245.2, evaporation of metal device and the method preparing ultra micro fine metal powder with this device, here is no longer detailed
Concrete preparation process is described), and check air-tightness, take out vacuum, pour nitrogen so that whole system is in inert gas atmosphere
Under, control pressure in crucible, start plasma producing apparatus, power setting is after 30KW, insulation 2h by plasma gun power
Bring up to 90KW, open continuous charging, keep evaporation capacity consistent with feeding quantity, under plasma heating, metal molten seethes with excitement
Evaporation through the long great achievement alloyed powder of a series of chilling forming core, finally prepd Cu59Ni40Mn0.5Fe0.5 alloyed powder, its
Average grain diameter is 2 μm about, and Ni content is 40.2%, Fe content is 0.55% for 0.46%, Mn content, and remaining is Cu.
The preparation process of other embodiments is with above-described embodiment 1.
Using vaporize-condensation law preparation, obtain the adnic powder of needs after the classification of high accuracy gas phase, according to crystalline substance
Sheet resistance device thick film print technology makes the wafer resistor of new technology, with some parameters of current two kinds of techniques of main flow carry out right
Parameter is as shown in table 1 for ratio.
Table 1 embodiment of the present invention and comparative example performance parameter
From the point of view of the case study on implementation adopting, the ultralow resistance wafer resistor of the adnic powder preparation of the present invention is more normal
The resistor parameters index of rule thick-film technique preparation is all significantly lifted.As shown in Figure 3-4：The corronil of the present invention
Powder, main Cu and Ni element is evenly distributed on matrix.Although a lot of parameter indexs are not so good as the resistor of thin-film technique preparation,
But its resistance value scope is bigger, and uses temperature, durability, and the life-span is more long.
Claims (8)
1. a kind of ultralow resistance wafer resistor with adnic powder it is characterised in that：This alloyed powder is composed of the following components：
Ni 35-45wt%, Mn ＜ 1wt%, Fe ＜ 1wt%, balance of Cu.
2. ultralow resistance wafer resistor according to claim 1 with adnic powder it is characterised in that：It is by following
The group of mass percent is grouped into：Ni38-40wt%, Mn 0.1-0.8wt%, Fe 0.1-0.8wt%, balance of Cu.
3. ultralow resistance wafer resistor according to claim 1 with adnic powder it is characterised in that：This alloyed powder
It is prepared from by vaporize-condensation law, its Ni, Fe, Mn are solidly soluted in the lattice of Cu, form the uniform solid solution alloy of Elemental redistribution
Powder.
4. ultralow resistance wafer resistor according to claim 1 with adnic powder it is characterised in that：Described conjunction
The average grain diameter of bronze is 0.3-3 μm.
5. ultralow resistance wafer resistor according to claim 1 with adnic powder it is characterised in that：Described conjunction
Oxygen content≤the 4000ppm of bronze.
6. ultralow resistance wafer resistor according to claim 1 with adnic powder it is characterised in that：Described conjunction
Carbon content≤the 800ppm of bronze.
7. ultralow resistance wafer resistor according to claim 1 with adnic powder it is characterised in that：Described conjunction
Impurity content≤the 500ppm of bronze.
8. ultralow resistance wafer resistor according to claim 1 with adnic powder it is characterised in that：Described conjunction
The melting range of bronze is 1254-1352 DEG C.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610913534.2A CN106435259A (en) | 2016-10-20 | 2016-10-20 | Copper-nickel alloy powder for ultralow-resistance chip resistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610913534.2A CN106435259A (en) | 2016-10-20 | 2016-10-20 | Copper-nickel alloy powder for ultralow-resistance chip resistor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106435259A true CN106435259A (en) | 2017-02-22 |
Family
ID=58175864
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610913534.2A Pending CN106435259A (en) | 2016-10-20 | 2016-10-20 | Copper-nickel alloy powder for ultralow-resistance chip resistor |
Country Status (1)
| Country | Link |
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| CN (1) | CN106435259A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109513917A (en) * | 2018-12-18 | 2019-03-26 | 江苏博迁新材料股份有限公司 | A kind of decreasing carbon method of PVD production nickel powder |
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|---|---|---|---|---|
| CN101717879A (en) * | 2009-12-11 | 2010-06-02 | 清华大学 | White copper alloy and preparation method thereof |
| CN102021360A (en) * | 2010-12-29 | 2011-04-20 | 中南大学 | Precision resistance alloy with resistance fatigue accumulation performance and preparation method thereof |
| CN102162046A (en) * | 2010-12-29 | 2011-08-24 | 中南大学 | Copper-nickel system precision resistor alloy foil and preparation method thereof |
| CN102851535A (en) * | 2012-08-23 | 2013-01-02 | 常丰（无锡）金属制品有限公司 | Copper-nickel 34 metal wire and preparation method thereof |
| CN104690266A (en) * | 2015-03-18 | 2015-06-10 | 宁波广博纳米新材料股份有限公司 | Copper-manganese alloy powder used for preparing front surface and back surface electrodes of wafer resistor |
-
2016
- 2016-10-20 CN CN201610913534.2A patent/CN106435259A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101717879A (en) * | 2009-12-11 | 2010-06-02 | 清华大学 | White copper alloy and preparation method thereof |
| CN102021360A (en) * | 2010-12-29 | 2011-04-20 | 中南大学 | Precision resistance alloy with resistance fatigue accumulation performance and preparation method thereof |
| CN102162046A (en) * | 2010-12-29 | 2011-08-24 | 中南大学 | Copper-nickel system precision resistor alloy foil and preparation method thereof |
| CN102851535A (en) * | 2012-08-23 | 2013-01-02 | 常丰（无锡）金属制品有限公司 | Copper-nickel 34 metal wire and preparation method thereof |
| CN104690266A (en) * | 2015-03-18 | 2015-06-10 | 宁波广博纳米新材料股份有限公司 | Copper-manganese alloy powder used for preparing front surface and back surface electrodes of wafer resistor |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109513917A (en) * | 2018-12-18 | 2019-03-26 | 江苏博迁新材料股份有限公司 | A kind of decreasing carbon method of PVD production nickel powder |
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Application publication date: 20170222 |