CN106430276B - 一种纳米晶及其制备方法和应用 - Google Patents
一种纳米晶及其制备方法和应用 Download PDFInfo
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- CN106430276B CN106430276B CN201610824292.XA CN201610824292A CN106430276B CN 106430276 B CN106430276 B CN 106430276B CN 201610824292 A CN201610824292 A CN 201610824292A CN 106430276 B CN106430276 B CN 106430276B
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01F—COMPOUNDS OF THE METALS BERYLLIUM, MAGNESIUM, ALUMINIUM, CALCIUM, STRONTIUM, BARIUM, RADIUM, THORIUM, OR OF THE RARE-EARTH METALS
- C01F17/00—Compounds of rare earth metals
- C01F17/20—Compounds containing only rare earth metals as the metal element
- C01F17/288—Sulfides
- C01F17/294—Oxysulfides
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
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- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K9/00—Tenebrescent materials, i.e. materials for which the range of wavelengths for energy absorption is changed as a result of excitation by some form of energy
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- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2002/00—Crystal-structural characteristics
- C01P2002/70—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data
- C01P2002/74—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data by peak-intensities or a ratio thereof only
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/01—Particle morphology depicted by an image
- C01P2004/04—Particle morphology depicted by an image obtained by TEM, STEM, STM or AFM
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/60—Particles characterised by their size
- C01P2004/64—Nanometer sized, i.e. from 1-100 nanometer
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Abstract
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Priority Applications (1)
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CN201610824292.XA CN106430276B (zh) | 2016-09-14 | 2016-09-14 | 一种纳米晶及其制备方法和应用 |
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CN201610824292.XA CN106430276B (zh) | 2016-09-14 | 2016-09-14 | 一种纳米晶及其制备方法和应用 |
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CN106430276A CN106430276A (zh) | 2017-02-22 |
CN106430276B true CN106430276B (zh) | 2017-11-07 |
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Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101475204A (zh) * | 2009-01-05 | 2009-07-08 | 昆明理工大学 | 一种荧光材料的制备方法 |
CN101486909A (zh) * | 2009-02-16 | 2009-07-22 | 昆明理工大学 | 一种绿色荧光粉及其制备方法 |
CN102105557A (zh) * | 2008-07-23 | 2011-06-22 | 皇家飞利浦电子股份有限公司 | 用于CT应用中的Gd2O2S材料 |
CN102392322A (zh) * | 2011-08-30 | 2012-03-28 | 长春理工大学 | 一种制备掺铕硫氧化钆发光纳米纤维的方法 |
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2016
- 2016-09-14 CN CN201610824292.XA patent/CN106430276B/zh active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102105557A (zh) * | 2008-07-23 | 2011-06-22 | 皇家飞利浦电子股份有限公司 | 用于CT应用中的Gd2O2S材料 |
CN101475204A (zh) * | 2009-01-05 | 2009-07-08 | 昆明理工大学 | 一种荧光材料的制备方法 |
CN101486909A (zh) * | 2009-02-16 | 2009-07-22 | 昆明理工大学 | 一种绿色荧光粉及其制备方法 |
CN102392322A (zh) * | 2011-08-30 | 2012-03-28 | 长春理工大学 | 一种制备掺铕硫氧化钆发光纳米纤维的方法 |
Non-Patent Citations (2)
Title |
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One-pot solvothermal synthesis of uniform layer-by-layer self-assembled ultrathin hexagonal Gd2O2S nanoplates and luminescent properties from single doped Eu3+ and codoped Er3+,Yb3+;Jie Liu,et al.;《Dalton Transactions》;20121231;13984-13988 * |
Preparation and luminescence property of Gd2O2S:Tb X-ray nano-phosphors using the complex precipitation method;Ying Tian,et al.;《Journal of Alloys and Compounds》;20061115;全文 * |
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Effective date of registration: 20230627 Address after: Room K178, Floor 5, Jinxing Building, No. 1, Hanjing Road, Tianhe District, Guangzhou, Guangdong 510000 (office only) Patentee after: Guangzhou Xingchen Technology Information Consulting Service Co.,Ltd. Address before: College of Materials Science, No. 258, Xueyuan Street, Jianggan District, Hangzhou, Zhejiang, 310018 Patentee before: China Jiliang University Effective date of registration: 20230627 Address after: 067600 in the factory area of Chengde kuanhang New Material Co., Ltd., yaowangmiao village, longxumen Town, Kuancheng Manchu Autonomous County, Chengde City, Hebei Province Patentee after: Chengde Kexiang New Material Technology Co.,Ltd. Address before: Room K178, Floor 5, Jinxing Building, No. 1, Hanjing Road, Tianhe District, Guangzhou, Guangdong 510000 (office only) Patentee before: Guangzhou Xingchen Technology Information Consulting Service Co.,Ltd. |