CN106430090A - Rare earth doped TiO2 hybrid solar cell - Google Patents
Rare earth doped TiO2 hybrid solar cell Download PDFInfo
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- CN106430090A CN106430090A CN201610902997.9A CN201610902997A CN106430090A CN 106430090 A CN106430090 A CN 106430090A CN 201610902997 A CN201610902997 A CN 201610902997A CN 106430090 A CN106430090 A CN 106430090A
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- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 title claims abstract description 62
- 229910052761 rare earth metal Inorganic materials 0.000 title claims abstract description 21
- 150000002910 rare earth metals Chemical class 0.000 title claims abstract description 18
- 239000000463 material Substances 0.000 claims abstract description 18
- 230000005540 biological transmission Effects 0.000 claims abstract description 5
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 26
- 239000000843 powder Substances 0.000 claims description 14
- 239000011521 glass Substances 0.000 claims description 13
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 12
- 239000008367 deionised water Substances 0.000 claims description 12
- 229910021641 deionized water Inorganic materials 0.000 claims description 12
- 229910052697 platinum Inorganic materials 0.000 claims description 12
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 12
- 238000002360 preparation method Methods 0.000 claims description 8
- 239000002096 quantum dot Substances 0.000 claims description 8
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 claims description 6
- 239000002105 nanoparticle Substances 0.000 claims description 6
- 230000005611 electricity Effects 0.000 claims description 5
- 229920000301 poly(3-hexylthiophene-2,5-diyl) polymer Polymers 0.000 claims description 5
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 claims description 4
- 238000000576 coating method Methods 0.000 claims description 4
- 239000000084 colloidal system Substances 0.000 claims description 4
- 239000012043 crude product Substances 0.000 claims description 4
- 239000007788 liquid Substances 0.000 claims description 4
- 239000003643 water by type Substances 0.000 claims description 4
- 108010010803 Gelatin Proteins 0.000 claims description 2
- 229910002621 H2PtCl6 Inorganic materials 0.000 claims description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 2
- 229920000144 PEDOT:PSS Polymers 0.000 claims description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 2
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 claims description 2
- 229920002538 Polyethylene Glycol 20000 Polymers 0.000 claims description 2
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 claims description 2
- 229910052772 Samarium Inorganic materials 0.000 claims description 2
- 235000011054 acetic acid Nutrition 0.000 claims description 2
- 150000001243 acetic acids Chemical class 0.000 claims description 2
- 238000013019 agitation Methods 0.000 claims description 2
- 238000001354 calcination Methods 0.000 claims description 2
- 238000005119 centrifugation Methods 0.000 claims description 2
- 238000012512 characterization method Methods 0.000 claims description 2
- 239000003086 colorant Substances 0.000 claims description 2
- 238000001816 cooling Methods 0.000 claims description 2
- 239000013527 degreasing agent Substances 0.000 claims description 2
- MNNHAPBLZZVQHP-UHFFFAOYSA-N diammonium hydrogen phosphate Chemical compound [NH4+].[NH4+].OP([O-])([O-])=O MNNHAPBLZZVQHP-UHFFFAOYSA-N 0.000 claims description 2
- 229910000388 diammonium phosphate Inorganic materials 0.000 claims description 2
- 235000019838 diammonium phosphate Nutrition 0.000 claims description 2
- BNIILDVGGAEEIG-UHFFFAOYSA-L disodium hydrogen phosphate Chemical compound [Na+].[Na+].OP([O-])([O-])=O BNIILDVGGAEEIG-UHFFFAOYSA-L 0.000 claims description 2
- 229910000397 disodium phosphate Inorganic materials 0.000 claims description 2
- 235000019800 disodium phosphate Nutrition 0.000 claims description 2
- 230000005518 electrochemistry Effects 0.000 claims description 2
- 239000003792 electrolyte Substances 0.000 claims description 2
- 239000003995 emulsifying agent Substances 0.000 claims description 2
- 238000001914 filtration Methods 0.000 claims description 2
- 239000012467 final product Substances 0.000 claims description 2
- 229920000159 gelatin Polymers 0.000 claims description 2
- 239000008273 gelatin Substances 0.000 claims description 2
- 235000019322 gelatine Nutrition 0.000 claims description 2
- 235000011852 gelatine desserts Nutrition 0.000 claims description 2
- 238000001027 hydrothermal synthesis Methods 0.000 claims description 2
- 238000007654 immersion Methods 0.000 claims description 2
- 238000000034 method Methods 0.000 claims description 2
- 238000002156 mixing Methods 0.000 claims description 2
- 230000007935 neutral effect Effects 0.000 claims description 2
- 229910017604 nitric acid Inorganic materials 0.000 claims description 2
- 235000011007 phosphoric acid Nutrition 0.000 claims description 2
- 229920001343 polytetrafluoroethylene Polymers 0.000 claims description 2
- 229910052700 potassium Inorganic materials 0.000 claims description 2
- 239000011591 potassium Substances 0.000 claims description 2
- 238000001556 precipitation Methods 0.000 claims description 2
- 239000000047 product Substances 0.000 claims description 2
- -1 samarium ion Chemical class 0.000 claims description 2
- 238000005245 sintering Methods 0.000 claims description 2
- 229910000029 sodium carbonate Inorganic materials 0.000 claims description 2
- 235000017550 sodium carbonate Nutrition 0.000 claims description 2
- 239000002904 solvent Substances 0.000 claims description 2
- 238000003756 stirring Methods 0.000 claims description 2
- 239000006228 supernatant Substances 0.000 claims description 2
- 239000000725 suspension Substances 0.000 claims description 2
- RYFMWSXOAZQYPI-UHFFFAOYSA-K trisodium phosphate Chemical compound [Na+].[Na+].[Na+].[O-]P([O-])([O-])=O RYFMWSXOAZQYPI-UHFFFAOYSA-K 0.000 claims description 2
- 229910000406 trisodium phosphate Inorganic materials 0.000 claims description 2
- 235000019801 trisodium phosphate Nutrition 0.000 claims description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims 7
- 239000004065 semiconductor Substances 0.000 abstract description 11
- 230000005281 excited state Effects 0.000 abstract description 3
- 239000011368 organic material Substances 0.000 abstract description 3
- 230000006798 recombination Effects 0.000 abstract description 3
- 238000005215 recombination Methods 0.000 abstract description 3
- 229920000620 organic polymer Polymers 0.000 abstract description 2
- 239000002159 nanocrystal Substances 0.000 abstract 1
- 238000001179 sorption measurement Methods 0.000 abstract 1
- 238000010521 absorption reaction Methods 0.000 description 6
- 239000000758 substrate Substances 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 230000004913 activation Effects 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000009466 transformation Effects 0.000 description 2
- 239000012190 activator Substances 0.000 description 1
- 150000001339 alkali metal compounds Chemical class 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 239000002178 crystalline material Substances 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 150000008040 ionic compounds Chemical class 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000002689 soil Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0296—Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe
- H01L31/02963—Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe characterised by the doping material
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035209—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures
- H01L31/035218—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures the quantum structure being quantum dots
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
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- Sustainable Energy (AREA)
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- Inorganic Chemistry (AREA)
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- Materials Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Hybrid Cells (AREA)
Abstract
The invention discloses a rare earth doped TiO2 hybrid solar cell which is characterized in that rare earth doped TiO2 can effectively control the energy structure of the hybrid solar cell. An n-type semiconductor material is a core part of a bulk heterojunction of the hybrid solar cell, is a support or adsorption carrier of a p-type semiconductor material, and is also an electronic transmission carrier. A TiO2 nanocrystal, as an n-type semiconductor, has the several advantages of high dielectric constant, long lifetime of excited state, high density of energy state, low electron-hole recombination rate and the like, and is an ideal electron acceptor material. The efficiency of injecting photomuons in a p-type organic material into an n-type semiconductor CB is reduced because of poor matching of energy levels of a currently used p-type organic polymer semiconductor material and the n-type semiconductor TiO2, and therefore, doping TiO2 has a wide application value and is suitable for commercialized production.
Description
Technical field
The present invention relates to the technical field of solaode is and in particular to a kind of rear-earth-doped TiO2The hydridization sun electricity
Pond.
Background technology
Rare earth element, because outer-shell electron track is similar with internal electron Rotating fields, has unfilled 4f electron configuration,
So the material containing rare earth element can show distinctive physicochemical properties, its distinctive potential obtains in a lot of fields very well
Development and application, particularly light, sound and magnetic aspect.Rare-earth luminescent material mainly includes substrate and activator two parts：Substrate one
As for rare earth or alkali metal compound composition insulator, including crystal and noncrystal；Substrate is active ions, is that battery carries
For suitable crystalline field, also can affect threshold power and output voltage electric current simultaneously.
Lanthanum（Ln）It is that ion has abundant level structure, be conducive to widening the absorption region to solar spectrum for the material, carry
The photoelectric properties of high solar cell.What is more important, the fluorescence lifetime of Ln system ionic compound is longer, and this contributes to photoproduction electricity
Son forms long-range diffusion, improves the separation of charge efficiency of bulk heterojunction structure.Additionally, Ln based compound also has chemistry, physics
Stability, has the sub- yield of higher amount and larger absorption cross-section.Past research have shown that, rear-earth-doped TiO2 can Effective Regulation
Its level structure.Type n semiconductor material is the core of hydridization solar cell bulk heterojunction, and it is not only p-type quasiconductor
The support of material or absorption carrier, and be also the transport vehicle of electronics.TiO2 nanocrystalline as n-type quasiconductor, there is Gao Jie
Many advantages, such as electric constant, long lifetime of excited state, the high energy density of states, low electron-hole recombination rate, is so as to become preferable electronics
Acceptor material.There is level-density parameter between the p-type organic polymer semiconductor material being used at present and n-type quasiconductor TiO2
Not good problem, leads to the efficiency that the optical phonon in p-type organic material injects n-type quasiconductor CB to reduce, thus doping TiO2
Technology is widely studied.
One preferable solar cell material should have good optical absorption characteristics, and P3HT is to have to the absorption region of light
Limit.By controlling the growth conditionss of TiO2 substrate crystalline material, the crystalline field of host material is adjusted, realizes to rare earth
Under element change activation, improve the transfer capability [63-65] to sunlight for the rare earth element, Eu3+, Tb3+, Ce3+, Sm3+,
Dy3+ plasma is conventional lower conversion rare earth activation ion.Different rare earth materials can send difference under the irradiation of ultraviolet light
The light of color, optionally strengthens the luminous of specific band, is utilized by P3HT molecule again, increase the efficiency of light energy utilization of P3HT.
Content of the invention
The problem existing for prior art, it is an object of the invention to provide one kind can to improve photoelectric transformation efficiency dilute
Soil doping TiO2Hydridization solar cell.
For achieving the above object, include successively from bottom to up：ITO electro-conductive glass, p-type doped quantum dot layer, n-type doping amount
Son point layer, electronics-hole transmission layer, antireflection coatings, to electrode；It is characterized in that：In p-type doped quantum dot layer and N
It is respectively formed PN knot between type doped quantum dot layer.
Further, the rare earth doped layer of described P type is rare-earth Sm PO4Doping TiO2Nano-particle layer.
Further, the rare earth doped layer of described N type is PEDOT:PSS is as the nano-particle layer of hole transmission layer.
Further, described to electrode select platinum as solar cell to electrode, and electrode is arranged on antireflective apply
On layer.
The theory structure of the present invention is simple, reasonable in design, has stronger operability, and cost relatively low it is adaptable to
Commercially produce.
It is an advantage of the invention that：Rear-earth-doped TiO2 can its level structure of Effective Regulation.Type n semiconductor material is hydridization
The core of solar cell bulk heterojunction, it is not only support or the absorption carrier of p-type semi-conducting material, and is also electricity
The transport vehicle of son.TiO2 nanocrystalline as n-type quasiconductor, have high-k, long lifetime of excited state, the high energy density of states,
Many advantages, such as low electron-hole recombination rate, is so as to become preferable electron acceptor material.The p-type being used at present is organic poly-
There is a problem of that level-density parameter is not good between compound semi-conducting material and n-type quasiconductor TiO2, lead in p-type organic material
The efficiency that optical phonon injects n-type quasiconductor CB reduces, thus doping TiO2 has extensive applying value it is adaptable to commercialization
Produce.
Brief description
Fig. 1 is patent structure schematic diagram of the present invention.
In in figure, 1, ITO electro-conductive glass, 2, p-type doped quantum dot layer, 3, n-type doping quantum dot layer, 4, electronics-hole
Transport layer, 5, antireflection coatings, 6, to electrode.
Specific embodiment
First, the preparation to electrode for the platinum：Platinum to be prepared using the method for electrochemistry to electrode, and it comprises the following steps that：
（1）Solvent, H2PtCl6 6H2O are done with deionized water（0.5g）、(NH4)2HPO4（5g）And Na2HPO4（15g）As mixing
Solute is configured to 100 mL solution；（2）FTO electro-conductive glass is cut into specified size（20mm×15mm）, it is washed with deionized water
It is cleaned by ultrasonic 30 min with 10% NaOH solution again after net；（3）Glass is put into degreaser（NaOH：76 g/L、Na3PO4：26
G/L and Na2CO3：30 g/L）In boil 30 min after deionized water rinse well；（4）Negative electrode, Pt are made with FTO electro-conductive glass
Make anode, potassium chloroplatinate makees electrolyte, be 60 mA cm-2, electroplate 2 min under conditions of 80 DEG C, in FTO in electric current density
One layer of bright platinum mirror, as platinum electrode are obtained on conductive layer.
2nd, the preparation of rare-earth Sm PO4 nano-particle, comprises the following steps that：
（1）0.843 mmol Sm (NO3) 3 6H2O powder is completely dissolved in deionized water；
（2）?（1）0.862 mol (NH4) 2HPO4 is added to be stirred at room temperature to generation White Flocculus precipitation in described solution；
（3）Floccule is precipitated in the ptfe autoclave moving into 100 mL, add deionized water to reach container to liquid level
80%, with H3PO4 adjust pH value be 4；
（4）Reactor is transferred to 200 DEG C of hydro-thermal 12 h in baking oven, naturally cools to room temperature after terminating, obtain final product white suspension molten
Liquid；
（5）Product centrifugation after hydro-thermal is obtained powder, is washed with deionized powder to neutral, dries to obtain crude product powder
End, then SmPO4 can be obtained through 850 DEG C of high temperature sintering 30 min.
3rd, the TiO2 of rare-earth Sm PO4 doping, using hydro-thermal method preparation, comprises the following steps that：
（1）Take 10 mL tetra-n-butyl titanates to be slowly added dropwise to the conical flask equipped with 10 mL deionized waters to engender to solution
Muddiness, after 30 min are stirred at room temperature, solution sucking filtration in bottle is obtained white powder；
（2）The filter powder being obtained is moved in 250 mL round-bottomed flasks, adds 10 mL glacial acetic acids（10 mL）With 0.8 mL concentrated nitric acid
（0.8 mL）, 80 DEG C of stirring 15 min；
（3）Add 160 mL deionized waters extremely（2）Described in solution, 80 DEG C of airtight magnetic agitation present light blue to bottle
Gelatin body；
（4）Colloid is moved into 200 DEG C of hydro-thermal 12 h in 100 mL reactors and obtains TiO2 presoma；
（5）After hydro-thermal terminates, remove supernatant, take 65 mL lower floor white colloidal in conical flask, add P25（0.75 g, 10
wt%）With SmPO4 powder（0.375 g, 5 wt%）；
（6）Add deionized water to 150 mL, ultrasonic disperse 30 min；
（7）Will（6）Described solution moves into 200 DEG C of hydro-thermal 12 h in 100 mL reactors and obtains samarium ion doping TiO2 crude product；
（8）PEG-20000 is added toward in the solution after hydro-thermal（0.5 g）With 4 OP emulsifying agents, 80 DEG C are concentrated into milky white coloring agent
Shape obtains Sm3+ doping TiO2.
4th, the preparation assembling of hydridization solar cell device, its characterization step is as follows：
（1）TiO2 colloid is scratched on electro-conductive glass FTO layer；
（2）450 DEG C of calcining 1.5 h, natural cooling in chamber type electric resistance furnace；
（3）Glass with TiO2 is put into the toluene solution of p-type quasiconductor P3HT（0.05M）Middle immersion 12 h, take out nature
Dry to obtain p-n bulk heterojunction structure
（4）2 hole mobile material PEDOT of Deca:PSS, directly over bulk heterojunction, covers above-mentioned prepared platinum to electrode,
With clip, closely clamping is obtained simple hybrid bulk heterojunction solar cell.
5th, pass through appeal step and can prepare low cost, the high-photoelectric transformation efficiency of big, the abundant level structure of peak width at half height
The hydridization solar cell of rear-earth-doped TiO2.
Claims (8)
1. a kind of rear-earth-doped TiO2Hydridization solar cell, include successively from bottom to up：ITO electro-conductive glass, p-type doping quantum
Point layer, n-type doping quantum dot layer, electronics-hole transmission layer, antireflection coatings, to electrode；It is characterized in that：In p-type doping
It is respectively formed PN knot between quantum dot layer and N type doped quantum dot layer.
2. a kind of rear-earth-doped TiO according to claim 12Hydridization solar cell it is characterised in that：Described p-type is mixed
Miscellaneous rare earth layer is the nano-particle layer of rare-earth Sm PO4 doping TiO2.
3. a kind of rear-earth-doped TiO according to claim 12Hydridization solar cell it is characterised in that：Described N type
Rare earth doped layer is PEDOT:PSS is as the nano-particle layer of hole transmission layer.
4. a kind of rear-earth-doped TiO according to claim 12Hydridization solar cell it is characterised in that：Described to electricity
Pole selects platinum as solar cell to electrode, and electrode is arranged on antireflection coatings.
5. a kind of rear-earth-doped TiO according to claim 12Hydridization solar cell it is characterised in that：Platinum is to electricity
The preparation of pole：Platinum to be prepared using the method for electrochemistry to electrode, and it comprises the following steps that
（1）Solvent, H2PtCl6 6H2O are done with deionized water（0.5g）、(NH4)2HPO4（5g）And Na2HPO4（15g）As
Mixing solute is configured to 100 mL solution；
（2）FTO electro-conductive glass is cut into specified size（20mm×15mm）, deionized water clean after again with 10% NaOH
Solution is cleaned by ultrasonic 30 min；
（3）Glass is put into degreaser（NaOH：76 g/L、Na3PO4：26 g/L and Na2CO3：30 g/L）In boil 30 min
Deionized water is rinsed well afterwards；
（4）Negative electrode is made with FTO electro-conductive glass, Pt makees anode, potassium chloroplatinate makees electrolyte, electric current density be 60 mA cm-2,
Electroplate 2 min under conditions of 80 DEG C, one layer of bright platinum mirror, as platinum electrode are obtained on FTO conductive layer.
6. a kind of rear-earth-doped TiO according to claim 12Hydridization solar cell it is characterised in that：Rare-earth Sm PO4
The preparation of nano-particle, comprises the following steps that：
（1）0.843 mmol Sm (NO3) 3 6H2O powder is completely dissolved in deionized water；
（2）?（1）0.862 mol (NH4) 2HPO4 is added to be stirred at room temperature to generation White Flocculus precipitation in described solution；
（3）Floccule is precipitated in the ptfe autoclave moving into 100 mL, add deionized water to reach container to liquid level
80%, with H3PO4 adjust pH value be 4；
（4）Reactor is transferred to 200 DEG C of hydro-thermal 12 h in baking oven, naturally cools to room temperature after terminating, obtain final product white suspension molten
Liquid；
（5）Product centrifugation after hydro-thermal is obtained powder, is washed with deionized powder to neutral, dries to obtain crude product powder
End, then SmPO4 can be obtained through 850 DEG C of high temperature sintering 30 min.
7. a kind of rear-earth-doped TiO according to claim 12Hydridization solar cell it is characterised in that：Rare-earth Sm PO4
The TiO2 of doping, using hydro-thermal method preparation, comprises the following steps that：
（1）Take 10 mL tetra-n-butyl titanates to be slowly added dropwise to the conical flask equipped with 10 mL deionized waters to engender to solution
Muddiness, after 30 min are stirred at room temperature, solution sucking filtration in bottle is obtained white powder；
（2）The filter powder being obtained is moved in 250 mL round-bottomed flasks, adds 10 mL glacial acetic acids（10 mL）With 0.8 mL concentrated nitric acid
（0.8 mL）, 80 DEG C of stirring 15 min；
（3）Add 160 mL deionized waters extremely（2）Described in solution, 80 DEG C of airtight magnetic agitation present light blue to bottle
Gelatin body；
（4）Colloid is moved into 200 DEG C of hydro-thermal 12 h in 100 mL reactors and obtains TiO2 presoma；
（5）After hydro-thermal terminates, remove supernatant, take 65 mL lower floor white colloidal in conical flask, add P25（0.75 g, 10
wt%）With SmPO4 powder（0.375 g, 5 wt%）；
（6）Add deionized water to 150 mL, ultrasonic disperse 30 min；
（7）Will（6）Described solution moves into 200 DEG C of hydro-thermal 12 h in 100 mL reactors and obtains samarium ion doping TiO2 crude product；
（8）PEG-20000 is added toward in the solution after hydro-thermal（0.5 g）With 4 OP emulsifying agents, 80 DEG C are concentrated into milky white coloring agent
Shape obtains Sm3+ doping TiO2.
8. a kind of rear-earth-doped TiO according to claim 12Hydridization solar cell it is characterised in that：The hydridization sun
The preparation assembling of battery device, its characterization step is as follows：
（1）TiO2 colloid is scratched on electro-conductive glass FTO layer；
（2）450 DEG C of calcining 1.5 h, natural cooling in chamber type electric resistance furnace；
（3）Glass with TiO2 is put into the toluene solution of p-type quasiconductor P3HT（0.05M）Middle immersion 12 h, take out nature
Dry to obtain p-n bulk heterojunction structure
（4）2 hole mobile material PEDOT of Deca:PSS, directly over bulk heterojunction, covers above-mentioned prepared platinum to electrode,
With clip, closely clamping is obtained simple hybrid bulk heterojunction solar cell.
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| CN109100406A (en) * | 2018-08-31 | 2018-12-28 | 大连工业大学 | A kind of rear-earth-doped TiO2The method that optical electro-chemistry sensor quickly detects organophosphorus pesticide |
| US11476434B2 (en) | 2019-10-31 | 2022-10-18 | Samsung Electronics Co., Ltd. | Electroluminescent device and display device comprising thereof |
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