CN106414792A - 一种在基材的基本平面延伸的表面上溅射沉积膜的方法 - Google Patents
一种在基材的基本平面延伸的表面上溅射沉积膜的方法 Download PDFInfo
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Abstract
在基材的基本平面延伸的表面上溅射沉积膜,所述表面在其中具有凹陷,即沟槽、洞、孔、通道、沟中的至少一种。为了一方面沿着所述基材的所述表面建立膜的均匀厚度分布和,另一方面,在凹陷内的厚膜沉积,溅射沉积首先在靶标的溅射表面与所述基材的所述表面之间的大距离进行,然后在所述表面之间的减小的距离进行。
Description
本发明涉及在基材的3D结构的、基本平面的和延伸的表面上溅射沉积薄膜,该基材在延伸的表面中具有凹陷,即沟槽、洞、孔、通道、沟中的至少一种,例如用于半导体应用中。
在如所述的具有凹陷的基本平面延伸的表面上通过溅射的薄膜沉积会遭受在凹陷(从现在起也被称为“沟槽”)的较深部分中减小的膜厚度,这归因于来自沟槽的邻近、升高部分的遮蔽。这种遮蔽效应依赖于特定的沟槽特征(准确的形式和纵横比),也依赖于沉积材料的总厚度-越厚的膜会导致越严重的遮蔽效应。
众所周知,在该产业中,除了温度和材料特定的效应像表面扩散和其他回流过程以外,原子撞击待涂覆表面的角度分布是影响遮蔽和因此是3D结构表面上所需的沟槽填充的一个关键参数。在溅射应用中,撞击原子到基材表面上的角度分布主要为以下的函数:1)溅射靶标的具体刻蚀图案,和2)溅射装置的几何形状,即分别为溅射靶标的尺寸和基材的尺寸、靶标和基材表面之间的距离(“TSD”-靶标基材距离),以及靶标与基材表面之间的角度。
如果1)和2)中的所有输入参数均已知,模拟撞击原子的角度分布和沉积膜得到的形貌是可能的,例如通过应用由Bader等最初开发的所谓的线算法(J.Vac.Sci.andTechnol.A,卷3,(1985),第2167-2171页)。
本发明的一个目的为提供一种溅射涂覆所述类型的基材的方法,以便一方面使沿着基材的基本平面延伸的表面的溅射沉积层具有沿着该表面的改进的厚度分布的均匀性和,另一方面,使凹陷的底部区域被具有增加的厚度的溅射沉积层覆盖。
这通过一种在基材的基本平面延伸的表面上溅射沉积膜的方法实现,由此所述表面具有凹陷,即沟槽、洞、孔、通道、沟中的至少一种。该方法包括:
将所述表面与溅射源靶标的基本平面的溅射表面平行、远离且相对放置,
通过所述溅射源第一溅射涂覆所述基材的所述表面,从而在所述靶标的所述溅射表面和所述基材的所述表面之间建立第一距离,且随后通过所述溅射源第二溅射涂覆所述基材的所述表面,从而在所述靶标的所述溅射表面和所述基材的所述表面之间建立第二距离,并选择第一距离大于第二距离。
在根据本发明方法的一个实施方案中,除非抵触,否则该实施方案可以与任一后述的实施方案组合,选择所述第二距离为所述第一距离的基本一半。
在根据本发明方法的一个实施方案中,除非抵触,否则该实施方案可以与任一已述的和后述的实施方案组合,所述第一和第二溅射涂层之间的溅射涂层被中断。这意味着,溅射源的等离子体放电被熄灭或至少在其强度上被减弱以导致实际上可忽略的溅射效应。
在根据本发明方法的一个实施方案中,除非抵触,否则该实施方案可以与任一已述的和后述的实施方案组合,在从所述第一距离改变到所述第二距离期间不间断地进行溅射涂覆。
本发明进一步涉及一种制造基材的方法,该基材具有基本平面延伸的表面,该表面具有凹陷,即沟槽、洞、孔、通道、沟中的至少一种,并且在那里包括所述凹陷的所述表面被膜覆盖。所述膜由此通过如上述的和根据权利要求1或根据其所述实施方案中的一个或多于一个、如权利要求2-4中的一个或多于一个所述的溅射沉积方法沉积。
本发明和本发明所基于的发现,现在应当借由附图的帮助被进一步解释和举例说明。附图显示:
图1:对于两个不同的靶标基材距离(TSD)a)50mm和b)100mm,溅射原子在基材的计算的角度分布(左)和模拟沉积(右)。
图2:在TSD100下沉积的3μm厚的膜的顶部上的2μm厚的膜的模拟沉积,而最后的2μm在a)TSD100(α=100%)和b)TSD50(α=60%)下沉积。
图3:对于两步骤过程的模拟沟槽覆盖率,所述两步骤过程包括分别在大TSD(TSD100)和小TSD(TSD50)下的沉积步骤,总膜厚度为5μm。
图4:对于在TSD100/TSD50下的两步骤过程,300mm晶片上的计算的径向膜厚度(a)和得到的膜厚度均匀性(b)。
图1a)和b)示出了对于不同TSD的靶标和基材的平面布置的二维中的如上述的模拟结果。这个和所有其他所述的覆盖率模拟以及膜厚度均匀性的计算基于使用400mm直径的溅射靶标的用于300mm晶片的现有技术状态的溅射沉积工具。可以清楚地看到,由于原子在基材表面上的更倾斜入射角度并因此增加的遮蔽效应,低TSD(图1a)导致减少的沟槽填充。
图1a)和图1b)中的箭头表示相对于在基材的最顶部的二维延伸表面的膜厚度的沟槽填充。
另一方面,对于给定的靶标尺寸和几何形状,当增加TSD时,基材上的膜厚度均匀性通常会恶化(显示朝向基材的边缘减少)。考虑本身,这可以通过改变靶标刻蚀模式到在大靶标半径下增加的刻蚀来补偿,但是这自动地导致在基材中心不利的、更倾斜的入射角-因此导致在此位置减少的沟槽填充。
一般来说,良好的膜厚度均匀性与良好的沟槽填充相违背。
另一个重要的方面是成本:对于给定的基材直径(例如300mm晶片),实际靶标尺寸总是源于良好的过程性能(例如良好的膜厚度均匀性的大靶标直径-尤其在大TSD下)和成本问题(转移因素、靶标成本-对于更小的靶标直径,两者均更低)之间的折衷。因此,当试图解决良好的膜厚度均匀性和良好的沟槽填充的两难困境时,还需要考虑靶标尺寸。
A.层厚度均匀性和沟槽填充的结合改进可以通过离子溅射试图获得,离子溅射需要基材的Rf偏压、大靶标和大TSD,并且因此是昂贵的。
基于图1a和1b的发现,本发明为通过溅射的薄膜沉积过程,该过程由两个连续步骤组成,而第一步骤包括,为了优化的沟槽覆盖率,在大TSD下沉积所需膜厚度的分数α,且第二步骤包括,为了补偿第一步骤的膜厚度的不均匀性,在小TSD下沉积所需膜厚度的分数1-α。
这样的两步骤过程可以被称为“变焦过程(Zoom-Process)”。
如上所述的计算机模拟已经揭露,尤其对于更大的膜厚度(与基材模式的尺寸相同数量级),只有膜沉积的开始强烈地受益于在大TDS下有利的沉积条件(撞击原子的更窄的角度分布),而在沉积过程的最后,无论如何额外的膜沉积对沟槽覆盖率的贡献是小的-因此在小或大TSD下沉积仅导致在整体沟槽覆盖率中较小的差异。
因此,如果且只有先应用大TSD步骤,在大TSD下沉积的总膜厚度分数α的减少(例如从100%到60-80%)会导致只有稍微减少的沟槽填充。
在图2中,示出于在TSD100下沉积的3μm厚膜的顶部上2μm厚膜的模拟沉积,而最后的2μm以a)TSD100(α=100%)和b)TSD50(α=60%)沉积。
另一方面,当检查膜厚度均匀性时,两步骤过程可以极大地改进膜厚度均匀性。得到的膜厚度分布为两步骤的简单叠加,并且因此得到的膜厚度均匀性达到与先应用小TSD步骤或大TSD步骤无关。
贯穿说明书和权利要求所述的膜厚度均匀性是指沿着完整基材的膜厚度分布,例如且在该实施例中为300mm晶片,其显著大于基材模式的凹陷的尺寸。
结论,公开的该两步骤过程(首先使用大TSD过程)导致优异的沉积过程,其解决了同时优化沟槽填充和膜厚度均匀性两者的两难困境。此外,由于良好的膜厚度均匀性通过在小TSD下操作该过程而获得,靶标直径也可以保持相当小,这具有重大的成本优势。
基于这些理论考虑,在团簇状溅射沉积工具上建立一个过程,该工具具有在非常相同的过程模块中改变TSD的能力。这种TSD改变可以通过在加工期间改变卡盘高度(即在卡盘移动期间,等离子体保持开启)或通过在卡盘移动期间暂停沉积过程来执行。在过程顺序中的原位卡盘高度调节的两种方式也为本发明的公开的一部分。
图3示出对于两步骤过程的模拟沟槽覆盖率,所述两步骤过程包括首先在大TSD(TSD100)下或首先在小TSD(TSD50)下的沉积步骤,总膜厚度为5μm。
图4示出了对于首先在TSD100下和随后在TSD50下的两步骤过程,在300mm晶片上的计算的径向膜厚度(a)和得到的膜厚度均匀性(b)。
Claims (5)
1.一种在基材的基本平面延伸的表面上溅射沉积膜的方法,所述表面具有凹陷,即沟槽、洞、孔、通道、沟中的至少一种,包括:
将所述基材的所述表面与溅射源的靶标的基本平面的溅射表面平行、远离且相对放置,
通过所述溅射源第一溅射涂覆所述基材的所述表面,从而在所述靶标的所述溅射表面和所述基材的所述表面之间建立第一距离,且随后
通过所述溅射源第二溅射涂覆所述基材的所述表面,从而在所述靶标的所述溅射表面和所述基材的所述表面之间建立第二距离,并选择第一距离大于第二距离。
2.如权利要求1所述的方法,包括选择所述第二距离为所述第一距离的基本一半。
3.如权利要求1或2之一所述的方法,包括在所述第一和第二溅射涂层之间中断溅射涂层。
4.如权利要求1或2之一所述的方法,包括在从所述第一距离改变到所述第二距离期间不间断地溅射涂覆。
5.一种制造基材的方法,所述基材具有基本平面延伸的表面,所述表面具有凹陷,即沟槽、洞、孔、通道、沟中的至少一种,并且在那里包括所述凹陷的所述表面被膜覆盖,所述膜通过权利要求1-4之一的方法沉积。
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---|---|---|---|---|
EP0692551A1 (en) * | 1994-07-15 | 1996-01-17 | Applied Materials, Inc. | Sputtering apparatus and methods |
US20010046767A1 (en) * | 1998-08-07 | 2001-11-29 | Seiji Manabe | Method and apparatus for manufacturing semiconductor device |
US20020017453A1 (en) * | 2000-03-22 | 2002-02-14 | Souichirou Iguchi | Sputtering method and manufacturing method of semiconductor device using the same |
-
2015
- 2015-02-13 US US15/118,416 patent/US20170175255A1/en not_active Abandoned
- 2015-02-13 KR KR1020167024482A patent/KR20160124138A/ko unknown
- 2015-02-13 CN CN201580009723.0A patent/CN106414792A/zh active Pending
- 2015-02-13 EP EP15706717.4A patent/EP3108029A1/en not_active Withdrawn
- 2015-02-13 SG SG11201606234VA patent/SG11201606234VA/en unknown
- 2015-02-13 WO PCT/EP2015/053072 patent/WO2015124501A1/en active Application Filing
- 2015-02-16 TW TW104105220A patent/TW201538773A/zh unknown
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0692551A1 (en) * | 1994-07-15 | 1996-01-17 | Applied Materials, Inc. | Sputtering apparatus and methods |
US20010046767A1 (en) * | 1998-08-07 | 2001-11-29 | Seiji Manabe | Method and apparatus for manufacturing semiconductor device |
US20020017453A1 (en) * | 2000-03-22 | 2002-02-14 | Souichirou Iguchi | Sputtering method and manufacturing method of semiconductor device using the same |
Also Published As
Publication number | Publication date |
---|---|
WO2015124501A1 (en) | 2015-08-27 |
TW201538773A (zh) | 2015-10-16 |
SG11201606234VA (en) | 2016-09-29 |
EP3108029A1 (en) | 2016-12-28 |
KR20160124138A (ko) | 2016-10-26 |
US20170175255A1 (en) | 2017-06-22 |
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