CN106411274A - High-speed amplifying circuit - Google Patents
High-speed amplifying circuit Download PDFInfo
- Publication number
- CN106411274A CN106411274A CN201610896996.8A CN201610896996A CN106411274A CN 106411274 A CN106411274 A CN 106411274A CN 201610896996 A CN201610896996 A CN 201610896996A CN 106411274 A CN106411274 A CN 106411274A
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- Prior art keywords
- transistor
- amplifying circuit
- resistance
- high speed
- drain electrode
- Prior art date
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- 230000005611 electricity Effects 0.000 claims description 6
- 239000013078 crystal Substances 0.000 claims description 5
- 238000010586 diagram Methods 0.000 description 10
- 238000000034 method Methods 0.000 description 3
- 238000005192 partition Methods 0.000 description 3
- DFCAFRGABIXSDS-UHFFFAOYSA-N Cycloate Chemical compound CCSC(=O)N(CC)C1CCCCC1 DFCAFRGABIXSDS-UHFFFAOYSA-N 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000005265 energy consumption Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/04—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only
- H03F3/16—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only with field-effect devices
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Amplifiers (AREA)
Abstract
The invention discloses a high-speed amplifying circuit comprising a first transistor, a second transistor, an inductor, at least one resistor and an output load, wherein a grid electrode of the first transistor is connected with the grid electrode of the second transistor through the inductor, one end of the inductor is connected with an input end of a to-be-amplified signal, one end of the resistor is connected with the input end of the to-be-amplified signal, the other end of the resistor is used as an output end of the to-be-amplified signal, the other end of the resistor is separately connected with one end of the output load, a drain electrode of the first transistor and the drain electrode of the second transistor, the other end of the output load is connected with power supply ground, a source electrode of the first transistor is connected with a supply voltage, and the source electrode of the second transistor is connected with the power supply ground. The high-speed amplifying circuit adopts the inductor to remove a part of capacitance by resonance, realizes a higher bandwidth increase without increasing output current, and is higher in gain and low in power consumption.
Description
Technical field
The present invention relates to amplifying circuit, more particularly, to a kind of high speed amplifying circuit.
Background technology
Mutual conductance：Refer to the ratio of the output current of a circuit unit and the input voltage of this unit, this circuit unit leads to
Often refer to amplifier.
In prior art, most amplifying circuit adopts common source framework, and the voltage gain of amplifying circuit is multiplied by negative equal to mutual conductance
Carrying resistance is, export three dB bandwidth gain BW=1/RC, R is load resistance, and C is output loading.In order to increase gain, by
Bandwidth can be reduced in increasing resistance, in the case of not increasing resistance, the output stage being usually designed in amplifying circuit has
The mutual conductance g to improve output stage for the increased electric currentm, however, this can lead to power consumption to increase.
Content of the invention
In order to solve above-mentioned technical problem, it is an object of the invention to provide a kind of high speed that need not increase electric current amplifies electricity
Road.
The technical solution adopted in the present invention is：A kind of high speed amplifying circuit, including the first transistor, transistor seconds,
Inductance, at least one resistance and output loading, the grid of described the first transistor is passed through inductance and is connected with the grid of transistor seconds
Connect, one end of described inductance is connected with input signal to be amplified, one end of described resistance and input signal to be amplified
Connect, the other end of described resistance as the outfan amplifying signal, the other end of described resistance also respectively with output loading
The drain electrode of one end, the drain electrode of the first transistor and transistor seconds connects, another termination power ground of described output loading, described
The source electrode of the first transistor connects supply voltage, and the source electrode of described transistor seconds connects power supply ground.
As the improvement further of technique scheme, described output loading is electric capacity.
As the improvement further of technique scheme, described the first transistor is PMOS transistor.
As the improvement further of technique scheme, described transistor seconds is nmos pass transistor.
The invention has the beneficial effects as follows：
A kind of high speed amplifying circuit, goes resonance to fall partition capacitance using inductance, in the case of need not increasing output current, realizes
Higher bandwidth increases, and gain is bigger, low in energy consumption.
Brief description
Below in conjunction with the accompanying drawings the specific embodiment of the present invention is described further：
Fig. 1 is a kind of circuit structure diagram of amplifying circuit in prior art one；
Fig. 2 is a kind of circuit structure diagram of amplifying circuit in prior art two；
Fig. 3 is a kind of circuit structure diagram of amplifying circuit in prior art three；
Fig. 4 is a kind of circuit structure diagram of the specific embodiment one of present invention high speed amplifying circuit；
Fig. 5 is a kind of circuit structure diagram of the specific embodiment two of present invention high speed amplifying circuit；
Fig. 6 is the frequency response curve of prior art two, prior art three and the specific embodiment of the invention one.
Specific embodiment
It should be noted that in the case of not conflicting, the embodiment in the application and the feature in embodiment can phases
Mutually combine.
Prior art one：
Fig. 1 is a kind of circuit structure diagram of amplifying circuit in prior art one, as shown in figure 1, a kind of amplifying circuit, including resistance
R1, nmos pass transistor M1 and output capacitance C1, one end of described resistance R is connected with supply voltage, the other end of resistance R with described
The drain electrode of nmos pass transistor M1 connects, and the grid of described nmos pass transistor M1 is connected with the input of overall amplifying circuit, receives
Input signal to be amplified, the source electrode of described nmos pass transistor M1 connects power supply ground, the drain electrode of resistance R1 and nmos pass transistor M1
As the outfan amplifying signal, signal, the connection section of the drain electrode of resistance R1 and nmos pass transistor M1 are amplified in output to connecting node
Point is connected with one end of output capacitance C1, the other end ground connection of output capacitance C1.The amplifying circuit of embodiment one, output gain is, wherein gmnIt is the resistance values that the mutual conductance of nmos pass transistor M1, R are resistance R1, output three dB bandwidth is,
Wherein C is the capacitance of output capacitance C1.In order to increase gain, bandwidth can be reduced due to increasing resistance, not increase resistance
In the case of, the mutual conductance g of nmos pass transistor M1 can only be increasedm（Mutual conductance is the ratio of output current and input voltage）, and will increase
gm, then need to increase the output current of nmos pass transistor M1.
Prior art two：
Fig. 2 is a kind of circuit structure diagram of amplifying circuit in prior art two, as shown in Fig. 2 a kind of amplifying circuit, including NMOS
Transistor M1, PMOS transistor M2, resistance R1 and output capacitance C1, the grid of described nmos pass transistor M1 and PMOS transistor M2
Grid connect, the connecting node of the grid of nmos pass transistor M1 and the grid of PMOS transistor M2 is with one end of resistance R1 even
Connect, as input signal to be amplified, the drain electrode of nmos pass transistor M1 is connected with the drain electrode of PMOS transistor M2, NMOS crystal
The drain electrode of pipe M1 is connected with the other end of resistance R1 with the drain electrode of PMOS transistor M2, and the drain electrode of nmos pass transistor M1, PMOS are brilliant
The connecting node that the drain electrode of body pipe M2 is connected with the other end of R1 is as the outfan amplifying signal, the other end of R1 and output electricity
The one end holding C1 connects, the other end ground connection of output capacitance C1.Compared with prior art one, the offer of prior art two embodiment
Effective mutual conductance from gmnBecome gmn+gmp, because the grid of PMOS transistor M2 and nmos pass transistor M1 and drain electrode all connect respectively
Connect, mutual conductance electric current is superimposed, so effective mutual conductance becomes gmn+gmp, wherein gmpIt is the mutual conductance of PMOS transistor M2, common design
Under selection, gmpIt is about gmn1/2, so, effective mutual conductance increases by 1.5 times.
Prior art three：
Fig. 3 is a kind of circuit structure diagram of amplifying circuit in prior art three, as shown in figure 3, combining Fig. 2, prior art three is
Increase an inductance L1 in input signal to be amplified on the basis of prior art two, increase inductance L1 resonance in input
Fall partition capacitance in amplifying circuit, realizing bandwidth increases, and the concrete formula of voltage gain is：
（1）
Wherein, RfIt is resistance R1 resistance value, LgIt is the inductance value of L1, Cgsp、CgsnIt is PMOS transistor M2 and NMOS crystal respectively
The input capacitance of pipe M1, Cdsp、CdsnIt is PMOS transistor M2 and the output capacitance of nmos pass transistor M1 respectively, rop、ronIt is respectively
PMOS transistor M2 and the output impedance of nmos pass transistor M1, gmp、gmnIt is PMOS transistor M2 and nmos pass transistor M1 respectively
Mutual conductance.
The specific embodiment of the invention one：
Fig. 4 is a kind of circuit structure diagram of the specific embodiment one of present invention high speed amplifying circuit, as shown in figure 4, combining Fig. 3,
The embodiment of the present invention is to be further improved on the basis of prior art three, changes the position of inductance L1 in Fig. 3 circuit, by electricity
Sense L1 is connected between input signal to be amplified and the grid of nmos pass transistor M1.A kind of electricity of the present embodiment high speed amplifying circuit
Pressure gain concrete formula be：
（2）
Wherein, RfIt is resistance R1 resistance value, LgIt is the inductance value of L1, Cgsp、CgsnIt is PMOS transistor M2 and NMOS crystal respectively
The input capacitance of pipe M1, Cdsp、CdsnIt is PMOS transistor M2 and the output capacitance of nmos pass transistor M1 respectively, rop、ronIt is respectively
PMOS transistor M2 and the output impedance of nmos pass transistor M1, gmp、gmnIt is PMOS transistor M2 and nmos pass transistor M1 respectively
Mutual conductance.Compared with prior art three, the amplifying circuit gain of the present invention significantly increases.
The specific embodiment of the invention two：
Fig. 5 is a kind of circuit structure diagram of the specific embodiment two of present invention high speed amplifying circuit, as shown in figure 5, combining Fig. 4,
The high speed amplifying circuit of embodiment two is with the difference of the high speed amplifying circuit of embodiment one, changes inductance L1 in Fig. 4 circuit
Position, inductance L1 is connected between input signal to be amplified and the grid of PMOS transistor M2.Equally there is increase gain
Beneficial effect.
Fig. 6 is the frequency response curve of prior art two, prior art three and the specific embodiment of the invention one, such as Fig. 6
Shown, in figure 1 represents that the frequency response curve of prior art two, in figure 2 represent the frequency response curve of prior art three, in figure
The frequency response curve of the 3 expression specific embodiment of the invention one.As can be seen from Figure, increase electricity in input signal to be amplified
Sense, bandwidth substantially increases, and the present invention is compared with prior art three, and the frequency resonant point of the high speed amplifying circuit of the present invention is by former
ComeTransfer to, that is, resonance point in higher frequency, bigger increase bandwidth, help
Lifting in overall frequency response curve.
A kind of high speed amplifying circuit, goes resonance to fall partition capacitance using inductance, in the case of need not increasing output current,
Realizing higher bandwidth increases, and gain is bigger, low in energy consumption.
It is more than that the preferable enforcement to the present invention is illustrated, but the invention is not limited to described embodiment, ripe
Know those skilled in the art and also can make a variety of equivalent variations or replacement on the premise of spiritual without prejudice to the present invention, these
Equivalent deformation or replacement are all contained in the application claim limited range.
Claims (4)
1. a kind of high speed amplifying circuit is it is characterised in that it includes the first transistor, transistor seconds, inductance, at least one electricity
Resistance and output loading, the grid of described the first transistor is connected with the grid of transistor seconds by inductance, and the one of described inductance
End is connected with input signal to be amplified, and one end of described resistance is connected with input signal to be amplified, described resistance
The other end as the outfan amplifying signal, the other end of described resistance also one end, the first transistor with output loading respectively
Drain electrode and the drain electrode of transistor seconds connect, another termination power ground of described output loading, the source of described the first transistor
Pole connects supply voltage, and the source electrode of described transistor seconds connects power supply ground.
2. a kind of high speed amplifying circuit according to claim 1 is it is characterised in that described output loading is electric capacity.
3. a kind of high speed amplifying circuit according to claim 1 is it is characterised in that described the first transistor is PMOS crystal
Pipe.
4. one kind according to claim 1 tells amplifying circuit it is characterised in that described transistor seconds is NMOS crystal
Pipe.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610896996.8A CN106411274A (en) | 2016-10-14 | 2016-10-14 | High-speed amplifying circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610896996.8A CN106411274A (en) | 2016-10-14 | 2016-10-14 | High-speed amplifying circuit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106411274A true CN106411274A (en) | 2017-02-15 |
Family
ID=59229705
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610896996.8A Pending CN106411274A (en) | 2016-10-14 | 2016-10-14 | High-speed amplifying circuit |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113518495A (en) * | 2021-04-16 | 2021-10-19 | 深圳市紫光新能源技术有限公司 | Lamp control system and lamp control method |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2004008298A2 (en) * | 2002-07-16 | 2004-01-22 | Koninklijke Philips Electronics N.V. | Capacitive feedback circuit |
| CN102882476A (en) * | 2012-10-24 | 2013-01-16 | 四川和芯微电子股份有限公司 | High-bandwidth amplifying circuit |
| CN105187015A (en) * | 2015-08-11 | 2015-12-23 | 中船重工鹏力（南京）大气海洋信息系统有限公司 | High-gain low-noise-coefficient amplifying circuit with low power consumption |
| CN206164480U (en) * | 2016-10-14 | 2017-05-10 | 广州昌钰行信息科技有限公司 | High -speed amplifier circuit |
-
2016
- 2016-10-14 CN CN201610896996.8A patent/CN106411274A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2004008298A2 (en) * | 2002-07-16 | 2004-01-22 | Koninklijke Philips Electronics N.V. | Capacitive feedback circuit |
| CN102882476A (en) * | 2012-10-24 | 2013-01-16 | 四川和芯微电子股份有限公司 | High-bandwidth amplifying circuit |
| CN105187015A (en) * | 2015-08-11 | 2015-12-23 | 中船重工鹏力（南京）大气海洋信息系统有限公司 | High-gain low-noise-coefficient amplifying circuit with low power consumption |
| CN206164480U (en) * | 2016-10-14 | 2017-05-10 | 广州昌钰行信息科技有限公司 | High -speed amplifier circuit |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113518495A (en) * | 2021-04-16 | 2021-10-19 | 深圳市紫光新能源技术有限公司 | Lamp control system and lamp control method |
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