CN106410341B - A kind of wideband high-power load based on planar spiral distribution - Google Patents
A kind of wideband high-power load based on planar spiral distribution Download PDFInfo
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- CN106410341B CN106410341B CN201611015278.1A CN201611015278A CN106410341B CN 106410341 B CN106410341 B CN 106410341B CN 201611015278 A CN201611015278 A CN 201611015278A CN 106410341 B CN106410341 B CN 106410341B
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- planar spiral
- film resistance
- power load
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- microstrip lines
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/24—Terminating devices
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Abstract
The invention discloses a kind of wideband high-power loads based on planar spiral distribution comprising substrate；It is equipped with 50 Ω microstrip lines, impedance matching circuit and film resistance on a surface of a substrate；50 Ω microstrip lines, for being connected with the input terminal of signal；Impedance matching circuit is matched for realizing 50 Ω microstrip lines with the ultra wide band of film resistance using three minor matters step transform structures of series connection；Film resistance, using resistivity and width gradual change formula attenuating structure, for realizing being uniformly distributed for heat produced by power dissipation；50 Ω microstrip lines, impedance matching circuit and film resistance use planar spiral-type to be distributed on a surface of a substrate, impedance matching circuit is connected with microstrip line and film resistance respectively, and 50 Ω microstrip lines be located at the outsides of planar spiral structures, film resistance is located at the inside of planar spiral structures, and pad value is sequentially reduced from inside to outside along helical structure；It is connected with wire ground electrode in the end of film resistance.The present invention is conducive to improve the power capacity of wideband high-power load.
Description
Technical field
The present invention relates to a kind of wideband high-power loads based on planar spiral distribution.
Background technology
In microwave and millimeter wave large power test, it is often necessary to use the load of high-power broadband microwave and millimeter wave.Current
High power load is substantially based on the linear type microstrip circuit attenuation network of thick film circuit realization, due to linear structure point
On the one hand cloth form limits the contour structures of micro-strip attenuation network, often so that the shape of attenuator or load it is not only thin but also
It is long, it is practical with bringing many inconveniences to engineering, meanwhile, linear attenuation network is distributed, can not be planar abundant
Attenuation network is arranged, efficiently using for heat dissipation area is also greatly limited, causes its power capacity that can not accomplish to further expand；
On the other hand, the technology of the high-power attenuation network of traditional thick film circuit, due to being limited to the scheme of thick film circuit, attenuation network
The power capacity of itself can not further increase, and therefore, which can not adapt to the further promotion of power capacity.
With the continuous improvement of microwave and millimeter wave solid-state power amplifier output power, the power capacity of typical high power load and work
Bandwidth has been no longer able to meet real system requirements of one's work, therefore, it is necessary to using new technology come improve its power capacity and
Working band.
Invention content
It is an object of the invention to propose a kind of wideband high-power load being distributed based on planar spiral, to solve microwave
In millimeter wave broadband large power test field, how to further increase wideband high-power load power capacity the problem of, and
Under equal-wattage capacity, how to widen the working band of load and reduce the technical problems such as the reflection loaded.
To achieve the goals above, the present invention adopts the following technical scheme that：
A kind of wideband high-power load based on planar spiral distribution, including substrate；It is equipped with 50 on a surface of a substrate
Ω microstrip lines, impedance matching circuit and film resistance；
50 Ω microstrip lines, for being connected with the input terminal of signal；
Impedance matching circuit, using three minor matters step transform structures of series connection, for realizing 50 Ω microstrip lines and film resistance
Ultra wide band matching；
Film resistance, using resistivity and width gradual change formula attenuating structure, for realizing the equal of heat produced by power dissipation
Even distribution；
50 Ω microstrip lines, impedance matching circuit and film resistance use planar spiral-type to be distributed on a surface of a substrate, wherein：
50 Ω microstrip lines are located at the outside of planar spiral structures, and film resistance is located at the inside of planar spiral structures, and declines
Depreciation is sequentially reduced from inside to outside along helical structure；
It is connected with wire ground electrode in the end of film resistance.
Preferably, the substrate is made of BeO ceramic materials.
Preferably, the wire ground electrode is made of golden material.
Preferably, the film resistance is made of TaN materials.
Preferably, the end of the film resistance uses sector structure.
Preferably, the wire ground electrode is connected to the ground by metallization VIA.
Preferably, the wideband high-power load further includes the soaking plate based on heat pipe principle, and substrate eutectic is welded in soaking
On plate.
Preferably, it is each configured with radiating fin in the upper and lower both sides of soaking plate.
Preferably, three minor matters step transform structures of the series connection include that three impedances convert minor matters, are Low ESR respectively
Minor matters, high impedance minor matters and middle impedance minor matters；Three impedance transformation minor matters are coupled in series.
Preferably, the resistivity and width gradual change formula attenuating structure are inputted using gradient ramp image hotpoint film resistance
Front end attenuation coefficient is small, and gradually increased characteristic, high-power signal are uniform successively according to its transmission channel for rear end attenuation coefficient
Decaying.
The invention has the advantages that：
(1) the 50 Ω microstrip lines and film resistance for using planar spiral distribution, can not only lengthen the biography of high-power signal
Defeated path-length greatly improves its power capacity, can also farthest utilize space, reduce the appearance and size of load；
(2) film resistance is distributed using resistivity and width gradual change formula, realizes uniformly dividing for heat produced by power dissipation
Cloth；In addition, the impedance matching of ultra wide band may be implemented in impedance matching circuit, it is more that the scope of application can cover microwave, millimeter wave
A frequency range；
(3) the soaking plate radiator based on heat pipe principle is used, and by combining eutectic welding technology, high thermal conductivity medium base
Plate and the mode for installing radiating fin additional, further improve radiating efficiency.
Description of the drawings
Fig. 1 is a kind of structural schematic diagram of the wideband high-power load based on planar spiral distribution in the present invention；
Fig. 2 is the partial enlargement structural representation of middle impedance match circuit of the present invention；
Fig. 3 is a kind of sectional view of the wideband high-power load based on planar spiral distribution in the present invention；
Wherein, 1- substrates, 2-50 Ω microstrip lines, 3- impedance matching circuits, 4- film resistances, 5- wire ground electrodes, 6- are low
Impedance minor matters, 7- high impedance minor matters, 8- middle impedance minor matters, 9- microstrip circuits, 10- soaking plates, 11- radiating fins.
Specific implementation mode
The present invention basic thought be：It is mutually tied using traditional low-loss micro-strip circuit and traditional film resistance attenuation network
The technology of conjunction and the structure design thought being distributed based on planar spiral, have been given full play to high-power signal and declined in input front end
It is small to subtract coefficient, it is the advantages of rear end requires attenuation coefficient gradually to increase, high-power signal is uniform successively according to its transmission channel
Decaying, electromagnetic energy is converted into thermal energy.Meanwhile the design feature being distributed using spiral shape, by traditional linear type attenuation network
Network extends in planar range, makes full use of its heat dissipation area, substantially increases radiating efficiency, and make its appearance and size more
Step up to gather.
Below in conjunction with the accompanying drawings and specific implementation mode invention is further described in detail：
In conjunction with shown in Fig. 1, a kind of wideband high-power load based on planar spiral distribution, including substrate 1.In substrate 1
Surface be equipped with 50 Ω microstrip lines 2, impedance matching circuit 3 and film resistance 4.Wherein：
Substrate 1 selects the BeO ceramic materials with Thermal conductivity and high-k.
By selecting the low-loss substrate 1 of high thermal conductivity coefficient, it can not only meet the requirement of input terminal high power capacity, also
The low standing-wave ratio of 50 Ω microstrip lines 2 can be made full use of, the reflection of input port is as much as possible reduced.Meanwhile low-loss is high
The substrate 1 of thermal coefficient is also more conducive to being uniformly distributed for the thermal losses of attenuation network, is unlikely to bear because input power is too big
Load is burnt out.
50 Ω microstrip lines 2, for being connected with the input terminal of signal.
Impedance matching circuit 3, using three minor matters step transform structures of series connection, for realizing 50 Ω microstrip lines and film resistance
4 ultra wide band matching.Specifically, the three minor matters step transform structure of series connection, which includes three impedances, converts minor matters, it is low respectively
Impedance minor matters, high impedance minor matters and middle impedance minor matters, three impedance transformation minor matters are coupled in series；By adjusting each resistance
Resistance changes the size of minor matters, can realize that 50 Ω microstrip lines are matched with the ultra wide band of film resistance in minimum space.
Film resistance 4, using resistivity and width gradual change formula attenuating structure, for realizing the equal of heat produced by power dissipation
Even distribution.Preferably, film resistance 4 is made of TaN materials.
Specifically, resistivity and width gradual change formula attenuating structure, utilize gradient ramp image hotpoint film resistance input front end
Attenuation coefficient is small, and rear end attenuation coefficient gradually uniformly decay successively according to its transmission channel by increased characteristic, high-power signal.
In addition, the end of film resistance 4 uses sector structure, its ghost effect can be greatly reduced.
Film resistance 4 coordinates the reflection that can effectively reduce input port with impedance matching circuit 3, widens coupling bandwidth.
50 Ω microstrip lines 2, impedance matching circuit 3 and film resistance 4 are distributed on the surface of substrate 1 using planar spiral-type.
Wherein, 50 Ω microstrip lines 2 are located at the outside of planar spiral structures, and film resistance 4 is located at the inside of planar spiral structures,
And pad value is sequentially reduced from inside to outside along helical structure.
By designing above-mentioned planar spiral-type structure, outside spiral, height loss are positioned over conducive to by low-loss decaying section
Decaying section be placed in inside spiral, and pad value is sequentially reduced from inside to outside with spiral.
Its basic attenuation principle is：The high-power of leading portion will be inputted to be combined with small attenuation coefficient, made full use of conventional micro-
Low dielectric loss with line, while it being distributed in the outside of spiral, to advanced optimize its heat dissipation effect；
Secondly, the back segment of attenuation network, since power attenuation is gradually transitions film resistance loss by dielectric loss,
The distribution of film resistance is distributed using resistivity and width gradual change formula, to realize the Uniform attenuation of power.
The high power capacity of load and low reflectance factor may be implemented by using different power attenuation principles in the present invention.
It is connected with wire ground electrode 5 in the end of film resistance 4, passes through metallization VIA reliable ground.
Preferably, wire ground electrode 5 selects the good gold of electric conductivity.
Wideband high-power load further includes the soaking plate 10 based on heat pipe principle, will include 50 Ω microstrip lines 2, impedance matching
Microstrip circuit 9 including circuit 3 and film resistance 4 etc. is made on substrate 1, and then 1 eutectic of substrate is welded in soaking plate 10.
Preferably, it is each configured with radiating fin 11 in the upper and lower both sides of soaking plate 10.
By using the soaking plate radiator based on heat pipe principle, in conjunction with high thermal conductivity medium substrate 1 and be integrated in
Radiating fin 11 on hot plate, to further increase being uniformly distributed and improving radiating efficiency to greatest extent for heat.
The course of work of middle width strip high power load of the present invention approximately as：
Electromagnetic wave enters 50 Ω microstrip lines 2 by input port first, in low-loss microstrip circuit energy transport,
A part of energy of electromagnetic field is converted to thermal energy after being attenuated, then under the matching effect of impedance matching circuit 3, electromagnetic field signal
Film resistance 4 is entered by low-loss microstrip circuit, since film resistance 4 uses the design scheme of resistivity and width gradual change formula,
Therefore energy of electromagnetic field will Uniform attenuation successively, until being all converted to thermal energy, and dissipated by soaking plate radiator.
It should be noted that the microwave and millimeter wave high power load in the present invention refers to coaxial high power load.
Certainly, described above is only that presently preferred embodiments of the present invention is answered the present invention is not limited to enumerate above-described embodiment
When explanation, any technical person familiar with the field is all equivalent substitutes for being made, bright under the introduction of this specification
Aobvious variant, all falls within the essential scope of this specification, ought to be protected by the present invention.
Claims (10)
1. a kind of wideband high-power load based on planar spiral distribution, which is characterized in that including substrate；On the surface of the substrate
It is equipped with 50 Ω microstrip lines, impedance matching circuit and film resistance；
50 Ω microstrip lines, for being connected with the input terminal of signal；
Impedance matching circuit, using three minor matters step transform structures of series connection, for realizing the super of 50 Ω microstrip lines and film resistance
Broadband Matching；
Film resistance, using resistivity and width gradual change formula attenuating structure, for realizing uniformly dividing for heat produced by power dissipation
Cloth；
The entirety of 50 Ω microstrip lines, impedance matching circuit and film resistance composition uses planar spiral structures formula on a surface of a substrate
Distribution, wherein：
50 Ω microstrip lines are located at the outside of planar spiral structures, and film resistance is located at the inside of planar spiral structures, and pad value
It is sequentially reduced from inside to outside along helical structure；
It is connected with wire ground electrode in the end of film resistance.
2. a kind of wideband high-power load based on planar spiral distribution according to claim 1, which is characterized in that institute
It is made of BeO ceramic materials to state substrate.
3. a kind of wideband high-power load based on planar spiral distribution according to claim 1, which is characterized in that institute
It is made of golden material to state wire ground electrode.
4. a kind of wideband high-power load based on planar spiral distribution according to claim 1, which is characterized in that institute
It is made of TaN materials to state film resistance.
5. a kind of wideband high-power load based on planar spiral distribution according to claim 1, which is characterized in that institute
The end for stating film resistance uses sector structure.
6. a kind of wideband high-power load based on planar spiral distribution according to claim 1, which is characterized in that institute
Wire ground electrode is stated to be connected to the ground by metallization VIA.
7. a kind of wideband high-power load based on planar spiral distribution according to claim 1, which is characterized in that institute
It further includes the soaking plate based on heat pipe principle to state wideband high-power load, and substrate eutectic is welded in soaking plate.
8. a kind of wideband high-power load based on planar spiral distribution according to claim 7, which is characterized in that
The upper and lower both sides of soaking plate are each configured with radiating fin.
9. a kind of wideband high-power load based on planar spiral distribution according to claim 1, which is characterized in that institute
It includes that three impedances convert minor matters to state three minor matters step transform structures of series connection, be respectively Low ESR minor matters, high impedance minor matters and
Middle impedance minor matters；Three impedance transformation minor matters are coupled in series.
10. a kind of wideband high-power load based on planar spiral distribution according to claim 1, which is characterized in that
The resistivity and width gradual change formula attenuating structure, it is small using gradient ramp image hotpoint film resistance input front end attenuation coefficient,
Rear end attenuation coefficient gradually uniformly decay successively according to its transmission channel by increased characteristic, high-power signal.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201611015278.1A CN106410341B (en) | 2016-11-18 | 2016-11-18 | A kind of wideband high-power load based on planar spiral distribution |
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| CN201611015278.1A CN106410341B (en) | 2016-11-18 | 2016-11-18 | A kind of wideband high-power load based on planar spiral distribution |
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| CN106410341A CN106410341A (en) | 2017-02-15 |
| CN106410341B true CN106410341B (en) | 2018-10-09 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP3912175A4 (en) * | 2019-01-15 | 2022-10-12 | Smiths Interconnect Americas, Inc. | High frequency spiral termination |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108172957A (en) * | 2017-12-20 | 2018-06-15 | 北京无线电测量研究所 | A kind of ferrite base film microwave pad |
| CN111555005A (en) * | 2020-06-19 | 2020-08-18 | 中国电子科技集团公司第二十九研究所 | Miniaturized high-power multistage coaxial fixed attenuator |
| CN112397860A (en) * | 2020-10-30 | 2021-02-23 | 西南电子技术研究所（中国电子科技集团公司第十研究所） | Ultra-wideband millimeter wave high-power planar thin-film load |
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| US3810048A (en) * | 1972-02-24 | 1974-05-07 | Thomson Csf | Resistive power load |
| CN2108364U (en) * | 1991-11-23 | 1992-06-24 | 国营第七二○厂 | Coaxial load |
| US5748002A (en) * | 1996-01-26 | 1998-05-05 | Phase Dynamics Inc. | RF probe for montoring composition of substances |
| CN202662763U (en) * | 2012-07-03 | 2013-01-09 | 合肥威科电子技术有限公司 | High-power low-intermodulation load |
| CN204348877U (en) * | 2015-01-13 | 2015-05-20 | 河北博威集成电路有限公司 | A kind of high power load circuit |
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2016
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Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3810048A (en) * | 1972-02-24 | 1974-05-07 | Thomson Csf | Resistive power load |
| CN2108364U (en) * | 1991-11-23 | 1992-06-24 | 国营第七二○厂 | Coaxial load |
| US5748002A (en) * | 1996-01-26 | 1998-05-05 | Phase Dynamics Inc. | RF probe for montoring composition of substances |
| CN202662763U (en) * | 2012-07-03 | 2013-01-09 | 合肥威科电子技术有限公司 | High-power low-intermodulation load |
| CN204348877U (en) * | 2015-01-13 | 2015-05-20 | 河北博威集成电路有限公司 | A kind of high power load circuit |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP3912175A4 (en) * | 2019-01-15 | 2022-10-12 | Smiths Interconnect Americas, Inc. | High frequency spiral termination |
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| CN106410341A (en) | 2017-02-15 |
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