CN106409964B - A kind of graphene-based mercury cadmium telluride and preparation method thereof - Google Patents
A kind of graphene-based mercury cadmium telluride and preparation method thereof Download PDFInfo
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- CN106409964B CN106409964B CN201611019083.4A CN201611019083A CN106409964B CN 106409964 B CN106409964 B CN 106409964B CN 201611019083 A CN201611019083 A CN 201611019083A CN 106409964 B CN106409964 B CN 106409964B
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- 238000002360 preparation method Methods 0.000 title claims abstract description 15
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims description 40
- 229910021389 graphene Inorganic materials 0.000 title claims description 39
- 229910000661 Mercury cadmium telluride Inorganic materials 0.000 title claims description 28
- MCMSPRNYOJJPIZ-UHFFFAOYSA-N cadmium;mercury;tellurium Chemical compound [Cd]=[Te]=[Hg] MCMSPRNYOJJPIZ-UHFFFAOYSA-N 0.000 title claims description 28
- 239000000463 material Substances 0.000 claims abstract description 61
- 239000010410 layer Substances 0.000 claims description 94
- 239000000758 substrate Substances 0.000 claims description 27
- 238000000034 method Methods 0.000 claims description 14
- 230000003647 oxidation Effects 0.000 claims description 10
- 238000007254 oxidation reaction Methods 0.000 claims description 10
- 238000000137 annealing Methods 0.000 claims description 5
- 239000002356 single layer Substances 0.000 claims description 4
- 229910004611 CdZnTe Inorganic materials 0.000 claims description 3
- 229910005542 GaSb Inorganic materials 0.000 claims description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 3
- 238000010521 absorption reaction Methods 0.000 claims description 3
- 230000005540 biological transmission Effects 0.000 claims description 3
- 230000008021 deposition Effects 0.000 claims description 3
- 238000000227 grinding Methods 0.000 claims description 3
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- 238000005498 polishing Methods 0.000 claims description 3
- 229910052594 sapphire Inorganic materials 0.000 claims description 3
- 239000010980 sapphire Substances 0.000 claims description 3
- 229910004613 CdTe Inorganic materials 0.000 claims description 2
- 229910007709 ZnTe Inorganic materials 0.000 claims description 2
- 230000009471 action Effects 0.000 claims description 2
- 239000011888 foil Substances 0.000 claims description 2
- 239000007792 gaseous phase Substances 0.000 claims description 2
- 230000033116 oxidation-reduction process Effects 0.000 claims description 2
- 240000007594 Oryza sativa Species 0.000 claims 1
- 235000007164 Oryza sativa Nutrition 0.000 claims 1
- 230000003139 buffering effect Effects 0.000 claims 1
- 235000009566 rice Nutrition 0.000 claims 1
- 238000001514 detection method Methods 0.000 abstract description 19
- 238000011161 development Methods 0.000 abstract description 5
- 230000018109 developmental process Effects 0.000 abstract description 5
- 230000004044 response Effects 0.000 abstract description 5
- 230000035945 sensitivity Effects 0.000 abstract description 5
- 230000033772 system development Effects 0.000 abstract description 2
- 238000010586 diagram Methods 0.000 description 6
- 238000001228 spectrum Methods 0.000 description 5
- 239000010409 thin film Substances 0.000 description 5
- 239000010408 film Substances 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 230000004043 responsiveness Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052714 tellurium Inorganic materials 0.000 description 2
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 2
- 235000006508 Nelumbo nucifera Nutrition 0.000 description 1
- 240000002853 Nelumbo nucifera Species 0.000 description 1
- 235000006510 Nelumbo pentapetala Nutrition 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000006096 absorbing agent Substances 0.000 description 1
- 239000011358 absorbing material Substances 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- DGJPPCSCQOIWCP-UHFFFAOYSA-N cadmium mercury Chemical compound [Cd].[Hg] DGJPPCSCQOIWCP-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000000571 coke Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007123 defense Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000003331 infrared imaging Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- -1 mercury cadmium tellurides Chemical class 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 238000002203 pretreatment Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/09—Devices sensitive to infrared, visible or ultraviolet radiation
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/024—Group 12/16 materials
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
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- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
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Abstract
The invention discloses a kind of infrared detecting materials and preparation method thereof.The infrared detecting materials of the present invention, including infrared light absorbing layer and charge transport vehicle layer；The charge transport vehicle layer is laid in the infrared light absorbing layer；Wherein, the charge transport vehicle layer is prepared by grapheme material.The embodiment of the present invention promotes the speed of response and detector sensitivity using grapheme material as the transport layer of photo-generated carrier, it is suitable for the demand of weaponry of new generation and electronic system development to infrared detector, solves to improve detection range, expand the weaponrys property development bottleneck problems such as detection frequency range, promotion detection accuracy.
Description
Technical field
The present invention relates to infrared detection technique field, more particularly to a kind of graphene-based mercury cadmium telluride and its preparation side
Method.
Background technology
Infrared detection technique is space reconnaissance, missile warning, near space target acquisition, airborne fire control, carrier-borne scouting
Important means, the detection performance of infrared detecting materials are the key that influence infrared detection system sensitivity.Since over half a century,
Infrared focal plane device based on photodetections materials such as mercury cadmium telluride, II class superlattices is rapidly developed, and is greatly promoted
The development of infrared imaging and Detection Techniques makes the detectivity that infrared acquisition is equipped be improved significantly, temperature control
Reach tens mK (10-2K magnitudes), preferably meet weaponry demand.
In order to meet remote, big model of the weaponrys such as space reconnaissance, early warning detection, airborne fire control to unfriendly target
It encloses, the demand of full passive detection etc., the requirement to the detectivity of infrared detection system increasingly improves；Meanwhile with
The development of infrared stealth technology, the radars of targets such as the stealthy fighter plane of a new generation, long-range stealth bomber, sea Stealth ship and
Infrared stealth ability is gradually improved, and the infrared intensity of aerial, sea and submarine target increasingly reduces, to realize to stealthy mesh
Target stablizes detection, needs the detectivity for further increasing infrared detection system.But meanwhile mercury cadmium telluride infrared acquisition at present
The quantum efficiency of material has reached 70% or so, uses the above-mentioned infrared red infrared focal plane detector for detecting material development
Detectivity has been approached or reaches theoretical performance limit, based on current infrared detecting materials, using the infrared coke of optimization
Technological approaches more than its detectivity 2 magnitudes of promotion is faced with by planar device performance sternly completes challenge.
Invention content
In order to further increase the detectivity of infrared detection system, the present invention provides a kind of graphene-based mercury cadmium tellurides
Material and preparation method thereof.
A kind of infrared detecting materials (graphene-based mercury cadmium telluride) provided by the invention, including infrared light absorbing layer and electricity
Lotus transport vehicle layer；The charge transport vehicle layer is laid in the infrared light absorbing layer；Wherein, the charge transport vehicle
Layer is prepared by grapheme material.
A kind of preparation method of infrared detecting materials (graphene-based mercury cadmium telluride) provided by the invention, including following step
Suddenly：
Face grown buffer layer, infrared light absorbing layer successively on substrate；
Graphene layer is grown on substrate；
The superficial oxidation layer of the infrared light absorbing layer is removed, and is annealed；The substrate below graphene layer is removed, and
By the graphene layer be transferred to it is annealed treated that infrared Absorption layer surface is bonded, obtain infrared detecting materials.
Beneficial effects of the present invention are as follows：
The embodiment of the present invention promotes the speed of response and detector using grapheme material as the transport layer of photo-generated carrier
Sensitivity, combine characteristic that unique band structure of grapheme material, superhigh current carrying transport factor, ultra-wide spectrum absorb and
The high quantum efficiency energy of mercury cadmium telluride is suitable for weaponry of new generation and electronic system development to infrared detector
Demand solves to improve detection range, expands detection frequency range, promotes the weaponrys property development bottleneck problems such as detection accuracy, real
Existing infrared acquisition sensitivity develops from tens mK to the sub- directions mK, supports medium-long range photodetection equipment of new generation from discrete, office
Portion's battle space awareness moves towards high-resolution, round-the-clock, wide spectrum, global multidimensional information and obtains.
Above description is only the general introduction of technical solution of the present invention, in order to better understand the technical means of the present invention,
And can be implemented in accordance with the contents of the specification, and in order to allow above and other objects of the present invention, feature and advantage can
It is clearer and more comprehensible, below the special specific implementation mode for lifting the present invention.
Description of the drawings
Fig. 1 is the structural schematic diagram of apparatus of the present invention embodiment infrared detecting materials；
Fig. 2 is the structural schematic diagram of the infrared detecting materials of apparatus of the present invention examples Example 1；
Fig. 3 is the flow chart of the method for the present invention embodiment infrared detecting materials preparation method；
Fig. 4 is the schematic diagram that the method for the present invention embodiment removes substrate below graphene film.
Specific implementation mode
The exemplary embodiment of the disclosure is more fully described below with reference to accompanying drawings.Although showing the disclosure in attached drawing
Exemplary embodiment, it being understood, however, that may be realized in various forms the disclosure without should be by embodiments set forth here
It is limited.On the contrary, these embodiments are provided to facilitate a more thoroughly understanding of the present invention, and can be by the scope of the present disclosure
Completely it is communicated to those skilled in the art.
Grapheme material has inborn advantage in photodetection application aspect.As a kind of carbon nanomaterial, graphene
Possess special band structure (zero band gap, zero effective mass), so that it has up to 200000cm2V-1s-1Superelevation carry
It flows transport factor and the ultra-wide spectrum from visible light to far infrared absorbs, shown from ultraviolet to infrared in terms of photodetector
Wide range response and ultrafast detection performance.As a kind of two-dimensional atomic crystal, graphene two-dimensional characteristics and existing silicon technology
Line perfection is compatible with；In addition, the two-dimensional characteristics of grapheme material can also be avoided since the electric leakage that pixel dimension reduces and generates is existing
As being expected to realize ultra high density pixel array, to realize high-resolution；And the material has extremely low power dissipation, high sensitive
And it is ultralight overstable.Before these superior properties and special two-dimensional structure make it have a wide range of applications in national defense and military
Scape.
Apparatus according to the invention embodiment, provides a kind of infrared detecting materials, and Fig. 1 is that apparatus of the present invention embodiment is red
The structural schematic diagram of outer detection material, as shown in Figure 1, including red according to the infrared detecting materials of apparatus of the present invention embodiment
Outer light absorbing layer and charge transport vehicle layer；The charge transport vehicle layer is laid in the infrared light absorbing layer；Wherein, institute
Charge transport vehicle layer is stated to be prepared by grapheme material.
Specifically, the infrared light absorbing layer is grown on the substrate equipped with buffer layer.
Specifically, the infrared light absorbing layer is prepared by mercury cadmium telluride.
Specifically, the thickness of the infrared light absorbing layer is 1~5 micron.
Specifically, the charge transport vehicle layer is made of single-layer or multi-layer graphene layer, single-layer or multi-layer graphene layer
As electrode layer and cap layer.The graphene layer is high speed charge transport layer, promotes the transmission speed of charge to greatest extent
Degree reduces transport layer due to the dark current of generation-compound generation, promotes the limiting performance of infrared acquisition.
When light incidence, infrared light absorbing layer absorbs incident light, generates photo-generate electron-hole pair, one of which
Charge is transferred on graphene, and quickly transmission forms photoelectric current under the action of applying bias.It is inhaled based on the excellent light of mercury cadmium telluride
It receives characteristic to attract using mercury cadmium telluride absorbed layer as grid and another charge in graphene, and then improves photoelectric current, increase
Photoconductive gain.Using the compound catch light that can theoretically obtain infrared band of graphene-based mercury cadmium telluride infrared detecting materials
Electroresponse degree.
In order to which the infrared detecting materials of the present invention are described in detail, example 1 is provided.
Fig. 2 is the structural schematic diagram of the infrared detecting materials of apparatus of the present invention examples Example 1, as shown in Fig. 2, infrared spy
Measure and monitor the growth of standing timber material include under the supreme substrate being arranged in order, buffer layer and infrared light absorbing layer and charge transport vehicle layer.
The material of the substrate is Si, GaAs, Ge, InSb, CdZnTe, GaSb or one kind in sapphire and tellurium cadmium
Other foreseeable substrates of mercury；The material of the buffer layer is ZnTe, CdTe, and thickness is tens angstroms to hundreds of angstroms；It is described infrared
The thickness of light absorbing layer (being prepared by mercury cadmium telluride) is 1~5 micron.
The infrared light absorbing layer of 1-5 microns is grown by way of extension or deposition, cutoff wavelength may include
Shortwave, medium wave, long wave and very long wave.
The charge transport vehicle layer is made of 1~10 graphene layer,
Apparatus of the present invention embodiment transmits separated method to improve detector sensitivity, base using light absorption and charge
In the characteristic that unique band structure of grapheme material, superhigh current carrying transport factor, ultra-wide spectrum absorb, in conjunction with mercury cadmium telluride
High quantum efficiency energy, by by mercury cadmium telluride infrared semiconductor absorbing material layer and graphene combination method, make tellurium cadmium
Mercury infrared semiconductor material plays the part of the role of absorber of light, and graphene then serves as charge transport vehicle, has obtained having high red
The graphene-based compound infrared detecting materials of a new generation of external radiation responsiveness, ultra-wide spectrum response range, it is red significantly to promote its
External radiation responsiveness and detectivity.
Embodiment according to the method for the present invention, provides a kind of preparation method of infrared detecting materials, and Fig. 3 is present invention side
The flow chart of method embodiment infrared detecting materials preparation method, as shown in figure 3, the infrared acquisition of embodiment according to the method for the present invention
The preparation method of material includes the following steps：
Step 301：Face grown buffer layer, infrared light absorbing layer successively on substrate.
Specifically, the material of the substrate is Si, GaAs, one kind in Ge, InSb, CdZnTe, GaSb or sapphire,
Or other foreseeable substrates of mercury cadmium telluride.
Step 302：Graphene film is grown on substrate.
Specifically, the material of the substrate is metal foil (such as Cu) or Si substrates.
Specifically, step 302 specifically includes following steps：
Graphene film is grown in substrate using gaseous phase deposition or oxidation-reduction method.
Step 303：The superficial oxidation layer of the infrared light absorbing layer is removed, and is annealed；It removes below graphene layer
Substrate, and by the graphene layer be transferred to it is annealed treated that infrared Absorption layer surface is bonded, obtain infrared
Detect material..
Specifically, removing the superficial oxidation layer of the mercury cadmium telluride thin film layer, and carries out annealing and specifically include following steps：
The infrared light absorbing layer is subjected to grinding and polishing, removes (5-10 microns of the superficial oxidation layer of the infrared light absorbing layer
The mercury cadmium telluride thin film material of left and right)；
Infrared light absorbing layer after removal superficial oxidation layer is subjected to p-type annealing, obtains p-type a concentration of 1015cm-3~
1017cm-3The infrared light absorbing layer of magnitude.
Fig. 4 is the schematic diagram that the method for the present invention embodiment removes substrate below graphene film.
Illustrate the method for the present invention embodiment in order to more detailed, provides example 2.
A kind of preparation method of infrared detecting materials of the present invention includes the following steps：
Step A：Theoretical calculation.According to material response wave-length coverage, setting mercury cadmium telluride (Hg1-xCdxTe) parameter of component,
Thickness；It calculates and the grapheme material thickness of mercury cadmium telluride level-density parameter, doping situation.
Step B：It is prepared by mercury cadmium telluride.Using Lattice Matching cadmium-zinc-teiluride substrate or other substitute substrates, by liquid phase outside
Prolong or the modes extension certain thickness mercury cadmium telluride thin films such as vapor deposited metal, molecular beam epitaxy, thickness is micron dimension；
Step C：It is bonded pre-treatment.Mercury cadmium telluride surface after having grown is through chemical cleaning removal superficial oxidation layer, annealing etc.
It waits for after technique and being bonded with graphene；
Step D：It is prepared by graphene film.Using vapor deposition or redox and other ordinary graphite alkene preparation methods
In Cu foils or other substrate grown graphene films；
Step E：It shifts and is bonded.Graphene is removed and transfer, by removing the base material needed for graphene growth,
It obtains graphene film and is transferred to the realization bonding of the mercury cadmium telluride surface in step C；
Wherein, it in the step A, based on the different characteristics of graphene and mercury cadmium telluride element, carries out graphene-based
The working mechanism of compound infrared detecting materials, the level-density parameter of graphene and mercury cadmium telluride, graphene and mercury cadmium telluride carry
The theoretical calculation for flowing sub- high speed transfer etc. obtains graphene-based mercury cadmium telluride structure design, and structure is similar to attached drawing 1.
Wherein, in the step B, substrate is using (111) or (211) cadmium-zinc-teiluride, Si, GaAs, Ge, InSb, Lan Bao
The once purged loading growth apparatus of the substrates such as stone, GaSb, the suitable mercury cadmium telluride thin film of growth components are then cooled to room temperature taking-up
Test characterization；
Wherein, in the step C, the mercury cadmium telluride of mercury cadmium telluride thin film material residue 5-10 microns after grinding and polishing is thin
Membrane material is annealed through p-type, obtains p-type a concentration of 1015cm-3-1017cm-3The thin-film material of magnitude.
Wherein, in the step D, graphene is single-layer or multi-layer graphene layer.
In conclusion according to a kind of graphene-based mercury cadmium telluride and preparation method thereof of the present invention, using graphene and
Mercury cadmium telluride advantage prepares composite material, the strong operability of technique itself.
Example the above is only the implementation of the present invention is not intended to restrict the invention, for those skilled in the art
For member, the invention may be variously modified and varied.Any modification made by all within the spirits and principles of the present invention,
Equivalent replacement, improvement etc., should be included within scope of the presently claimed invention.
Claims (8)
1. a kind of infrared detecting materials, including infrared light absorbing layer, which is characterized in that further include：Charge transport vehicle layer；It is described
Charge transport vehicle layer is laid in the infrared light absorbing layer；Wherein, the charge transport vehicle layer is by grapheme material system
It is standby to obtain；
When light incidence, infrared light absorbing layer absorbs incident light, generates photo-generate electron-hole pair, one of which charge
It is transferred on graphene, quickly transmission forms photoelectric current under the action of applying bias；
The infrared light absorbing layer is prepared by mercury cadmium telluride.
2. infrared detecting materials as described in claim 1, which is characterized in that the infrared light absorbing layer is grown in equipped with buffering
On the substrate of layer.
3. infrared detecting materials as claimed in claim 2, which is characterized in that the material of the substrate be Si, GaAs, Ge,
InSb, CdZnTe, GaSb or sapphire；The material of the buffer layer is ZnTe or CdTe.
4. infrared detecting materials as described in claim 1, which is characterized in that the thickness of the infrared light absorbing layer is 1~5 micro-
Rice.
5. infrared detecting materials as described in claim 1, which is characterized in that the charge transport vehicle layer is by single-layer or multi-layer
Graphene layer is constituted.
6. a kind of preparation method of Claims 1 to 5 any one of them infrared detecting materials, which is characterized in that including following
Step：
Face grown buffer layer, infrared light absorbing layer successively on substrate；
Graphene layer is grown on substrate；
The superficial oxidation layer of the infrared light absorbing layer is removed, and is annealed；The substrate below graphene layer is removed, and by institute
State graphene layer be transferred to it is annealed treated that infrared Absorption layer surface is bonded, obtain infrared detecting materials；
The superficial oxidation layer of the infrared light absorbing layer is removed, and carries out annealing and specifically includes following steps：
The infrared light absorbing layer is subjected to grinding and polishing, removes the superficial oxidation layer of the infrared light absorbing layer；
Infrared light absorbing layer after removal superficial oxidation layer is subjected to p-type annealing, obtains p-type a concentration of 1015cm-3~1017cm-3
The infrared light absorbing layer of magnitude.
7. the preparation method of infrared detecting materials as claimed in claim 6, which is characterized in that the material of the substrate is metal
Foil or Si.
8. the preparation method of infrared detecting materials as claimed in claim 6, which is characterized in that grow graphene on substrate
Layer specifically includes following steps：
Graphene layer is grown in substrate using gaseous phase deposition or oxidation-reduction method.
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