CN108630769A - A kind of nBn types InAlSb infrared detector materials and preparation method thereof, infrared detector - Google Patents
A kind of nBn types InAlSb infrared detector materials and preparation method thereof, infrared detector Download PDFInfo
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- 239000000463 material Substances 0.000 title claims abstract description 47
- 238000002360 preparation method Methods 0.000 title claims abstract description 13
- 230000004888 barrier function Effects 0.000 claims abstract description 30
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 claims abstract description 22
- 239000000126 substance Substances 0.000 claims description 16
- 239000000758 substrate Substances 0.000 claims description 14
- 239000002184 metal Substances 0.000 claims description 8
- 229910052751 metal Inorganic materials 0.000 claims description 8
- 230000005611 electricity Effects 0.000 claims description 4
- 238000001451 molecular beam epitaxy Methods 0.000 claims description 3
- 238000005036 potential barrier Methods 0.000 claims 1
- 238000005215 recombination Methods 0.000 abstract description 3
- 230000005284 excitation Effects 0.000 abstract description 2
- 230000006798 recombination Effects 0.000 abstract description 2
- 238000001514 detection method Methods 0.000 abstract 1
- 230000035945 sensitivity Effects 0.000 abstract 1
- 230000012010 growth Effects 0.000 description 9
- 238000000034 method Methods 0.000 description 6
- 239000000306 component Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 238000002161 passivation Methods 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- 229910017115 AlSb Inorganic materials 0.000 description 3
- 238000004458 analytical method Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000003139 buffering effect Effects 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 238000010792 warming Methods 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- 238000013475 authorization Methods 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 239000008358 core component Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000007872 degassing Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 238000013507 mapping Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000011056 performance test Methods 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000005057 refrigeration Methods 0.000 description 1
- 238000011896 sensitive detection Methods 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- 238000012800 visualization Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L31/03046—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds including ternary or quaternary compounds, e.g. GaAlAs, InGaAs, InGaAsP
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L31/03042—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds characterised by the doping material
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/105—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PIN type
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Abstract
The present invention relates to a kind of nBn types InAlSb infrared detector materials and preparation method thereof, infrared detectors.The material includes the absorbed layer, barrier layer and contact electrode layer set gradually from down to up, and absorbed layer is the In that N-shaped is lightly doped1‑xAlxSb, barrier layer are the In of the unintentional doping of N-shaped1‑yAlySb, contact electrode layer are the In of N-shaped heavy doping1‑xAlxSb.The infrared detector material of the present invention, the addition of Al elements can widen the bandwidth of InSb, reduce and generate recombination current and interband tunnel current caused by thermal excitation；The InAlSb barrier layers of addition broad stopband, Al component distribution gradients between contact layer and absorbed layer can effectively prevent G R electric currents in absorbed layer and tunnel current from being transported to contact electrode；The material can effectively reduce the dark current inside infrared device, improve operating temperature and detection sensitivity.
Description
Technical field
The present invention relates to the device structure design fields in infrared acquisition field, and in particular to a kind of nBn types InAlSb is infrared
Material for detector and preparation method thereof, infrared detector.
Background technology
Infrared light is the important component of electromagnetic spectrum, unique to target property in wave bands such as shortwave, medium wave, long waves with it
Reflection ability be widely used in military field, such as individual combat, precise guidance, infrared early warning, satellite surveying and mapping etc..
The military infrared detector of high-performance at present, being all made of the mode of cryogenic refrigeration reduces the noise of device, to improve infrared detector
Signal-to-noise ratio.However, harsh working environment so that the power consumption of infrared detector module entirety is high, volume is big, of high cost, reliable
Property is low, makes troubles to airborne, spaceborne, missile-borne infrared detector practical application.
By taking the target acquisition in modern Aviation field and infrared guidance as an example, with aircraft radars stealth technology, infrared dry
Disturb the development of technology, hypervelocity weapon precision Guidance Technique, it is desirable that the following Aircraft-Based Infrared Detector component must be provided simultaneously with：
One, higher infrared acquisition performance, i.e. high-speed response, high detectivity, high-resolution and multiband recognition capability are super to cope with
The flying speed of high-speed aircraft, the imaging of Low Temperature Target or distance small target, Infrared jamming and complexity battlefield photoelectricity ring
Border etc.；Two, lower cost, smaller volume, lighter weight and lower power consumption (i.e. Low SwaP-C technical criterias), with
The application requirement of small equipment platform in adaptation, widens the application range of infrared detector.
The patent that Authorization Notice No. is CN103208565B discloses a kind of Two-color Infrared Detectors material and its preparation side
Method, the material are in lower electrode layer, absorbed layer, barrier layer, the middle electrode for carrying out InAlSb successively on extension grade InSb substrates
The growth of layer, absorbed layer, upper electrode layer.The device belongs to pin structures, and the G-R electric currents and tunnel current in depletion layer cause device
Dark current inside part is larger, and operating temperature and detectivity need to be further increased.
Invention content
The purpose of the present invention is to provide a kind of nBn type InAlSb infrared detector materials that internal dark current is small.
Second object of the present invention is to provide the preparation method of above-mentioned nBn types InAlSb infrared detector materials.
Third object of the present invention is to provide using the infrared of above-mentioned nBn types InAlSb infrared detector materials preparation
Detector.
To achieve the above object, the technical solution adopted in the present invention is：
A kind of nBn types InAlSb infrared detector materials, including the absorbed layer, barrier layer and the electricity that set gradually from down to up
Pole contact layer, wherein absorbed layer is the In that N-shaped is lightly doped1-xAlxSb, doping concentration are less than 2 × 1016cm-3；Contact electrode layer is
The In of N-shaped heavy doping1-xAlxSb, doping concentration are 5 × 1016~5 × 1018cm-3；In1-xAlxIn Sb, 0<x<0.05；
Barrier layer is the In of the unintentional doping of N-shaped1-yAlySb, 0.08<y<0.4, from absorbed layer to contact electrode layer
On direction, the content of Al gradually increases in barrier layer.
NBn types InAlSb infrared detector materials provided by the invention, the addition of Al elements can widen the energy band of InSb
Width reduces generation-recombination current and interband tunnel current caused by thermal excitation；Addition between contact layer and absorbed layer is wide
Forbidden band, Al can effectively prevent G-R electric currents in absorbed layer and tunnel current defeated in the InAlSb barrier layers of concentration gradient distribution
Transport to contact electrode.Since the dark current of material internal can be effectively reduced, with one side of infrared detector of the material preparation
Face can work at a temperature of higher background limits, and on the other hand have more sensitive detection under original operating temperature
Degree.
Preferably, in absorbed layer and contact electrode layer, doped chemical is Te.Doped chemical can also can using other
Form the element of N-shaped doping.
The thickness of absorbed layer is 1~10 μm, and the thickness of barrier layer is 0.01~0.1 μm, and the thickness of contact electrode layer is not small
In 0.1 μm.
The side of the separate barrier layer of contact electrode layer is additionally provided with the cap layer for forming Ohmic contact with metal electrode.
Cap layer is the InSb of N-shaped heavy doping, and doping concentration is 5 × 1017~5 × 1018cm-3.The thickness of cap layer is 0.01~0.05
μm.Preferably, doped chemical Te.
The side of the separate barrier layer of absorbed layer is additionally provided with buffer layer；Buffer layer is the InSb of N-shaped doping, and doping concentration is
2×1016~2 × 1018cm-3；The thickness of buffer layer is 0.5~2 μm.Preferably, doped chemical Te.The setting of buffer layer can
Reduce the influence of defect on substrate.
The side of the separate barrier layer of buffer layer is equipped with substrate layer；Substrate layer is the InSb of N-shaped heavy doping, and doping concentration is
2×1017~2 × 1018cm-3.Preferably, doped chemical Te.
NBn types InAlSb infrared detector materials provided by the invention using the buffer layer of InAlSb material preparations, absorb
Layer, barrier layer and contact electrode layer can adjust the infrared absorption wavelength of absorbed layer by setting the composition of Al components in material,
Ensure that absorbing wavelength is in the infrared medium wave band of atmospheric window；The infrared device prepared using the above structure, absorbed layer can be protected
Relatively low table surface height is demonstrate,proved, the influence that surface leakage is brought is reduced, while ensuring that device has higher quantum efficiency；Barrier layer
Thickness setting farthest reduces the influence that material mismatch is brought；Contact electrode layer can form good with metal electrode
Ohmic contact and the effect of good carrier transport, cap layer are further formed good Ohmic contact, and can be with substrate shape
At infrared optics resonant cavity, increase quantum efficiency.It is compared with the pn-junction of InSb materials, on the one hand the device can be in identical work
There is higher detectivity at a temperature of work；On the other hand the device can be operated at a temperature of higher background limit.
The preparation method of above-mentioned nBn types InAlSb infrared detector materials is to grow suction successively using molecular beam epitaxy
Receive layer, barrier layer and contact electrode layer.
A kind of infrared detector prepared using above-mentioned nBn types InAlSb infrared detector materials.In the base of above-mentioned material
On plinth, is prepared by mesa etch and absorb table top, then passivation layer is prepared using PECVD, then prepared by magnetron sputtering technique
Metal electrode can prepare corresponding infrared detector.
Description of the drawings
Fig. 1 is the structural schematic diagram of the nBn type InAlSb infrared detector materials of the present invention；
Fig. 2 is the structural schematic diagram using the nBn type InAlSb infrared detectors of Fig. 1 structures.
Specific implementation mode
Embodiments of the present invention are described further below in conjunction with the accompanying drawings.In following embodiment, according to infra-red radiation
Air determine In through window and energy band analysis formula1-xAlxThe calculation formula of the material structure of Sb, bandwidth is：Eg In1 -xAlxSb=Eg AlSbx+Eg InSb(1-x), in formula, Eg AlSbFor the energy gap of AlSb, Eg In1-xAlxSbFor In1-xAlxThe forbidden band of Sb is wide
Degree, Eg InSbFor the energy gap of InSb.
Embodiment 1
The present embodiment sets In1-xAlxThe cutoff wavelength of Sb materials is 4.8 μm, big to cover main infrared medium wave
Gas penetrates window, passes through energy band analysis formula, x=0.018.
The nBn type InAlSb infrared detector materials of the present embodiment, structural schematic diagram is as shown in Figure 1, including from down to up
Substrate layer 6, buffer layer 5, absorbed layer 4, barrier layer 3, contact electrode layer 2 and the cap layer 1 set gradually, the concrete condition of each layer
For：
Substrate layer is the extension grade InSb of N-shaped heavy doping, and doped chemical Te, doping concentration is 6 × 1017cm-3, thickness
It is 450 μm；
Buffer layer is the InSb of N-shaped doping, and doped chemical Te, doping concentration is 3 × 1016cm-3, thickness is 1 μm；
Absorbed layer is the In that N-shaped is lightly doped0.982Al0.018Sb, doped chemical Te, doping concentration are 5 × 1014cm-3, thick
Degree is 2 μm；
Barrier layer is the In of the unintentional doping of N-shaped1-yAlySb, thickness is 0.01 μm, should on the direction far from absorbed layer
Al components gradually increase in layer, are being In close to absorbed layer side0.9Al0.1Sb is being In far from absorbed layer side0.7Al0.3Sb；
Contact electrode layer is the In of N-shaped heavy doping0.982Al0.018Sb, doped chemical Te, doping concentration are 1 × 1017cm-3, thickness is 0.8 μm；
Cap layer is the InSb of N-shaped doping, and doped chemical Te, doping concentration is 1 × 1018cm-3, thickness is 0.02 μm.
The preparation method of the nBn type InAlSb infrared detector materials of the present embodiment, includes the following steps：
1) growth rate test is carried out first：In InSb Grown InSb epitaxial layers, using reflected high energy electron
Diffractometer (RHEED) observes it and shakes curve, and calculates the growth rate of InSb；
2) line rule are used to be measured the line of required source stove, including the source In, Al, Sb, Te；
3) the InSb substrates cleaned up are fitted into molecular beam epitaxy system, then in Sample Room at 150-200 DEG C
Degasification 30 minutes opens source stove shutter after substrate is warming up to 350-400 DEG C, and surface protection, deaeration time are carried out to substrate
It is 40-50 minutes, is clearly become clear as standard with RHEED diffraction fringes；Underlayer temperature is adjusted to 370-420 DEG C, uses crystal
Scheduce software programming visualization procedures grow each layer structure according to setup parameter, wherein when InSb buffer growths successively
Between 3000s, 800 DEG C of Te source temperatures；Absorbed layer growth time 5000s closes the sources Te；Barrier layer growth time 100s closes Te
Source；830 DEG C of contact electrode layer growth time 500s, Te source temperature, 900 DEG C of cap layer growth time 150s, Te source temperature；The sources Al
Temperature keeps 950 DEG C in contact electrode layer and absorbed layer growth course, and 980 DEG C are at the uniform velocity warming up to from 945 DEG C in barrier layer.
Embodiment 2
The present embodiment sets In1-xAlxThe cutoff wavelength of Sb materials is 4.5 μm, passes through energy band analysis formula, x=0.028.
The nBn type InAlSb infrared detector materials of the present embodiment, including set gradually from down to up substrate layer, buffering
The concrete condition of layer, absorbed layer, barrier layer, contact electrode layer and cap layer, each layer is：
Substrate layer is the extension grade InSb of N-shaped heavy doping, and doped chemical Te, doping concentration is 8 × 1017cm-3, thickness
It is 500 μm；
Buffer layer is the InSb of N-shaped doping, and doped chemical Te, doping concentration is 4 × 1016cm-3, thickness is 1.6 μm；
Absorbed layer is the In that N-shaped is lightly doped0.96Al0.04Sb, doped chemical Te, doping concentration are 1 × 1014cm-3, thickness
It is 4 μm；
Barrier layer is the In of the unintentional doping of N-shaped1-yAlySb, thickness is 0.05 μm, should on the direction far from absorbed layer
Al components gradually increase in layer, are being In close to absorbed layer side0.9Al0.1Sb is being In far from absorbed layer side0.7Al0.3Sb；
Contact electrode layer is the In of N-shaped heavy doping0.96Al0.04Sb, doped chemical Te, doping concentration are 1 × 1018cm-3,
Thickness is 0.4 μm；
Cap layer is the InSb of N-shaped doping, and doped chemical Te, doping concentration is 2 × 1018cm-3, thickness is 0.02 μm.
It can be arranged according to the technological parameter of embodiment 1, adjust the ratio of each line, grow layers of material successively.
In other embodiments of the invention, when can prepare x=0.01 according to the technological parameter of embodiment 2, cutoff wavelength
For 5.1 μm of In1-xAlxSb materials；When x=0.02, corresponding wavelength is 4.7 μm of In1-xAlxSb materials；It is corresponding when x=0.03
The In that wavelength is 4.35 μm1-xAlxSb materials.
Test example
With the nBn type InAlSb infrared detector materials of embodiment 1 and embodiment 2, pass through dry etching and wet etching
The table top technology of preparing being combined, first mesa etch to absorbed layer (such as embodiment 1 can get 2 μm of table surface height), with electricity
Pole contact layer forms nn knots；The method for using anodic oxidation again forms one layer of uniform sull in mesa surfaces, then
Layer of silicon dioxide (passivation layer) is prepared on anodic film by PECVD, physical protection is carried out to chip surface and electricity is exhausted
Edge；Metal electrode window is corroded using acid solution, Ti/Cu metal electrodes are then sputtered by way of magnetron sputtering, is formed
Ohmic contact.The structural schematic diagram of gained infrared device is as shown in Fig. 2, include the substrate layer 6 set gradually from down to up, buffering
Layer 5, absorbed layer 4, barrier layer 3, contact electrode layer 2 and cap layer 1, cap layer, contact electrode layer, barrier layer width be less than and inhale
Layer is received, and then forms step surface, there is a passivation layer 8 in the surface recombination of step surface, cap layer, absorbed layer are located on passivation layer 8
Corresponding position is equipped with metal electrode hole, for placing metal electrode 7.
Corresponding infrared detector can get using the above method, by means of testing such as I-V, C-V to the electrical property of device
Energy, optical property are tested, and the results are shown in Table 1.
The performance test results of the infrared device of 1 embodiment 2 of table
By the test result of table 1 it is found that the dark current of material preparation infrared device using the present invention is small, make infrared acquisition
The background limit temperature of device chip gets a promotion, and reduces requirement of the infrared detector module to core components such as refrigerator, batteries, with
This reduces whole volume, weight, power consumption, cost, and lifting system reliability extends lifetime of system.
Claims (10)
1. a kind of nBn types InAlSb infrared detector materials, which is characterized in that including set gradually from down to up absorbed layer,
Barrier layer and contact electrode layer, wherein absorbed layer is the In that N-shaped is lightly doped1-xAlxSb, doping concentration are less than 2 × 1016cm-3；Electricity
Pole contact layer is the In of N-shaped heavy doping1-xAlxSb, doping concentration are 5 × 1016~5 × 1018cm-3；In1-xAlxIn Sb, 0<x<
0.05；
Barrier layer is the In of the unintentional doping of N-shaped1-yAlySb, 0.08<y<0.4, in the direction from absorbed layer to contact electrode layer
On, the content of Al gradually increases in barrier layer.
2. nBn types InAlSb infrared detector materials as described in claim 1, which is characterized in that absorbed layer and electrode contact
In layer, doped chemical is Te.
3. nBn types InAlSb infrared detector materials as claimed in claim 1 or 2, which is characterized in that the thickness of absorbed layer is
1~10 μm, the thickness of barrier layer is 0.01~0.1 μm, and the thickness of contact electrode layer is not less than 0.1 μm.
4. nBn types InAlSb infrared detector materials as described in claim 1, which is characterized in that contact electrode layer it is separate
The side of barrier layer is additionally provided with the cap layer for forming Ohmic contact with metal electrode.
5. nBn types InAlSb infrared detector materials as claimed in claim 4, which is characterized in that cap layer is N-shaped heavy doping
InSb, doping concentration be 5 × 1017~5 × 1018cm-3。
6. nBn types InAlSb infrared detector materials as described in claim 1, which is characterized in that the separate potential barrier of absorbed layer
The side of layer is additionally provided with buffer layer.
7. nBn types InAlSb infrared detector materials as claimed in claim 6, which is characterized in that buffer layer is N-shaped doping
InSb, doping concentration are 2 × 1016~2 × 1018cm-3。
8. the nBn type InAlSb infrared detector materials as described in claim 1 or 4 or 6, which is characterized in that buffer layer it is remote
Side from barrier layer is equipped with substrate layer.
9. a kind of preparation method of nBn types InAlSb infrared detector materials as described in claim 1, which is characterized in that adopt
Grow absorbed layer, barrier layer and contact electrode layer successively with molecular beam epitaxy, you can.
10. a kind of infrared detector prepared using nBn types InAlSb infrared detector materials as described in claim 1.
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111312836A (en) * | 2020-02-24 | 2020-06-19 | 京东方科技集团股份有限公司 | Photoelectric detector |
| CN111755554A (en) * | 2020-06-18 | 2020-10-09 | 中国电子科技集团公司第十一研究所 | Medium wave double-color infrared detector |
| CN113327991A (en) * | 2021-05-19 | 2021-08-31 | 南京国科半导体有限公司 | Two-color detector and preparation method thereof |
| CN114300566A (en) * | 2021-12-01 | 2022-04-08 | 中国电子科技集团公司第十一研究所 | Double-color infrared device structure and infrared detector |
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| CN111312836A (en) * | 2020-02-24 | 2020-06-19 | 京东方科技集团股份有限公司 | Photoelectric detector |
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| CN111755554B (en) * | 2020-06-18 | 2022-06-28 | 中国电子科技集团公司第十一研究所 | Medium wave double-color infrared detector |
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| CN113327991B (en) * | 2021-05-19 | 2022-08-16 | 南京国科半导体有限公司 | Two-color detector and preparation method thereof |
| CN114300566A (en) * | 2021-12-01 | 2022-04-08 | 中国电子科技集团公司第十一研究所 | Double-color infrared device structure and infrared detector |
| CN114300566B (en) * | 2021-12-01 | 2023-08-15 | 中国电子科技集团公司第十一研究所 | Dual-color infrared device structure and infrared detector |
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