CN106409932A - Staggered film anti-reflection structure having wide-spectrum and wide-angle characteristics - Google Patents
Staggered film anti-reflection structure having wide-spectrum and wide-angle characteristics Download PDFInfo
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- CN106409932A CN106409932A CN201610793539.6A CN201610793539A CN106409932A CN 106409932 A CN106409932 A CN 106409932A CN 201610793539 A CN201610793539 A CN 201610793539A CN 106409932 A CN106409932 A CN 106409932A
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- Prior art keywords
- film layer
- dislocation
- dislocation film
- wide
- broad
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- 238000001228 spectrum Methods 0.000 title abstract description 7
- 239000004065 semiconductor Substances 0.000 claims abstract description 29
- 239000000463 material Substances 0.000 claims abstract description 24
- 239000000758 substrate Substances 0.000 claims abstract description 11
- 239000002061 nanopillar Substances 0.000 claims description 15
- 239000010703 silicon Substances 0.000 claims description 7
- 229910052710 silicon Inorganic materials 0.000 claims description 7
- 230000000737 periodic effect Effects 0.000 claims description 4
- 239000004020 conductor Substances 0.000 claims description 2
- 239000000203 mixture Substances 0.000 claims description 2
- 240000007594 Oryza sativa Species 0.000 claims 1
- 235000007164 Oryza sativa Nutrition 0.000 claims 1
- 235000009566 rice Nutrition 0.000 claims 1
- 230000000694 effects Effects 0.000 abstract description 4
- 238000000034 method Methods 0.000 abstract description 4
- 239000002073 nanorod Substances 0.000 abstract 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical group O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 6
- 230000003667 anti-reflective effect Effects 0.000 description 4
- 239000002210 silicon-based material Substances 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 239000004408 titanium dioxide Substances 0.000 description 3
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000006117 anti-reflective coating Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 230000011514 reflex Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
Abstract
The invention discloses a staggered film anti-reflection structure having wide-spectrum and wide-angle characteristics. The structure comprises a semiconductor substrate, a first staggered film and a second staggered film; the semiconductor substrate is a semiconductor substrate having a nano-rod structure; the first staggered film is a film covered over the semiconductor substrate; and the second staggered film is a film covered over the first staggered film. The staggered films are staggered films, which are formed because a height difference exists between the top of the nano-rod structure and the surface of the substrate, have the same material and the same thickness, and are vertically covered over other same materials; the structure has a good anti-reflection effect under wide-angle and wide-spectrum incidence; and furthermore, the structure is simple in structure and easy to process.
Description
Technical field
The invention belongs to technical field of semiconductor device is and in particular to a kind of dislocation film layer with broad-spectrum wide-angle characteristic subtracts
Antistructure.
Background technology
With the mankind to a large amount of exploitations of fossil energy and consumption, energy crisis is increasingly becoming Jiao of international concern
Point.As the renewable and clean energy resource with huge reserves, solar energy has one of energy of Utilization prospects beyond doubt most.Now such as
The present, photovoltaic cell has become as one of main method using solar energy, but because the energy gap of semi-conducting material limits,
Traditional semi-conductor cell can only be higher than the luminous energy of energy gap part using energy, greatly limit Solar use efficiency
Lifting.In recent years, the proposition of photovoltaic-thermoelectricity (PV-TE) coupled system breaches the restriction of conventional photovoltaic battery so that wide spectrum
Solar energy highly effective, using becoming possibility, changes because sun light irradiation angle elapsed with the sunshine-duration in addition, therefore, has
The anti-reflection structure of wide spectrum and extensive angle characteristic realizes the key of solar energy highly effective utilization beyond doubt.As antireflective means it
One, antireflective coating has been extensively studied and has used.However, antireflection film layer can only be to narrow-band and low-angle incident illumination
Play the effect of inhibitory reflex.
Content of the invention
Goal of the invention：In order to overcome the deficiencies in the prior art, the present invention provides one kind to have broad-spectrum wide-angle characteristic
Dislocation film layer antireflection structure, be the composite construction of nano-pillar folded structures film layer, this structure is incident in wide spectrum and extensive angle
There is under light good anti-reflective effect.
Technical scheme：For achieving the above object, the technical solution used in the present invention is：
A kind of dislocation film layer antireflection structure with broad-spectrum wide-angle characteristic, by semiconductor base and covering dislocation film thereon
Layer composition, described semiconductor base upper surface has the nanometer rod structure of protrusion, and the top of described nanometer rod structure is higher than described
Semiconductor substrate surface, forms dislocation difference in height；Described dislocation film layer is along described semiconductor substrate surface and described nano-pillar knot
The laying of structure top covers at least one of which.
Further, described dislocation film layer is made up of the first dislocation film layer and the second dislocation film layer successively, and described first is wrong
Position film layer covers above described semiconductor base, and described second dislocation film layer covers above the first dislocation film layer.
Further, the same layer of described dislocation film layer thickness is uniform, material is identical；Between described dislocation film layer is adjacent
The material of each layer is different, and the refractive index of the described dislocation film layer positioned at upper strata is less than the refraction of the described dislocation film layer positioned at lower floor
Rate.
Further, described dislocation film layer can arrange different thickness according to Refractive Index of Material difference.
Further, the material of described semiconductor base and its nanometer rod structure having is identical, by silicon materials system
Become.
Further, the nanometer rod structure that described semiconductor base has has certain arrangement mode, can be six
Square array arranges, and periodic array arranges or random alignment.
Further, the nanometer intercolumniation in described nanometer rod structure is 300～600nm, nanometer column diameter and spacing
Ratio is 0.5～0.7, and nano-pillar height is 0.5～0.8 with the ratio of spacing.
Beneficial effect：The dislocation film layer antireflection structure with broad-spectrum wide-angle characteristic that the present invention provides, in sunlight Prepenem
The wavelength of amount relatively concentration is in the range of 300nm-2500nm, and has good antireflective in the range of angle of incidence is 0 ° -60 °
Effect.And structure is simply it is easy to process.
Brief description
Fig. 1,2 be the present invention single feature structural representation；
Fig. 3 is the structural representation at plane shown in dotted line frame in Fig. 2.
In figure label title：1st, semiconductor base, the 2, first dislocation film layer, the 3, second dislocation film layer.
Specific embodiment
Below in conjunction with the accompanying drawings the present invention is further described.
In conjunction with Fig. 1 to Fig. 3, the present invention is a kind of dislocation film layer antireflection structure with broad-spectrum wide-angle characteristic, antireflection structure
Including semiconductor base 1, first dislocation film layer 2 and the second dislocation film layer 3；Wherein, dislocation film layer refers to due to semiconductor-based
Bottom nano-pillar structural top with substrate surface, there is difference in height and formed dislocation, there is identical material, same thickness, vertical cover
Cover the film layer above other same material.Semiconductor base 1 upper surface has a nanometer rod structure, the section of semiconductor base 1
As shown in the structure 1 in Fig. 3, wherein, ledge is the section shape of nanometer rod structure to shape.And nano-pillar can be any
Arrangement mode.As shown in figure 3, the first dislocation film layer 2 is the film layer covering above semiconductor base 1, the second dislocation film layer 3 is
Cover the film layer above the first dislocation film layer 2, film layer can be any materials, any thickness.Dislocation film layer refers to due to half
Conductor substrate nano-pillar structural top with substrate surface, there is difference in height and formed dislocation, there is identical material, same thickness,
Vertically cover the film layer above other same material.This structure has good antireflective under extensive angle and wide spectrum incidence
Effect, and structure is simply it is easy to process.
Embodiment 1：
A kind of dislocation film layer antireflection structure with broad-spectrum wide-angle characteristic, specific embodiment is：
It is semiconductor base materials from silicon materials, silicon nano-pillar arrangement mode is six square array arrangements, each nano-pillar
Centrage between distance be 600nm, a diameter of 300nm of silicon nano-pillar, the height of nano-pillar is 250nm.
The material of the first dislocation film layer is titanium dioxide, and the thickness of the first dislocation film layer is 45nm.
The material of the second dislocation film layer is silicon dioxide, and the thickness of the second dislocation film layer is 120nm.
This embodiment obtain dislocation film layer antireflection structure, angle of incidence be respectively 0 °, 10 °, 20 °, 30 °, 40 °, 50 °,
When 60 °, wave-length coverage is respectively for calculating its average reflectance by time-domain finite difference during 300nm-2500nm
3.24%th, 2.91%, 2.67%, 2.46%, 2.49%, 2.85%, 4.05%.
Embodiment 2：
A kind of dislocation film layer antireflection structure with broad-spectrum wide-angle characteristic, specific embodiment is：
It is semiconductor base materials from silicon materials, silicon nano-pillar arrangement mode arranges for periodic array, array period is
1000nm, silicon nanometer column diameter is 500nm, and the height of nano-pillar is 400nm.
The material of the first dislocation film layer is titanium dioxide, and the thickness of the first dislocation film layer is 45nm.
The material of the second dislocation film layer is silicon dioxide, and the thickness of the second dislocation film layer is 120nm.
This embodiment obtain dislocation film layer antireflection structure, angle of incidence be respectively 0 °, 10 °, 20 °, 30 °, 40 °, 50 °,
When 60 °, wave-length coverage is respectively for calculating its average reflectance by time-domain finite difference during 300nm-2500nm
4.18%th, 4.28%, 4.18%, 4.02%, 4.13%, 4.54%, 5.62%.
Embodiment 3：
A kind of dislocation film layer antireflection structure with broad-spectrum wide-angle characteristic, specific embodiment is：
It is semiconductor base materials from silicon materials, silicon nano-pillar arrangement mode arranges for periodic array, array period is
800nm, silicon nanometer column diameter is 400nm, and the height of nano-pillar is 300nm.
The material of the first dislocation film layer is titanium dioxide, and the thickness of the first dislocation film layer is 30nm.
The material of the second dislocation film layer is silicon dioxide, and the thickness of the second dislocation film layer is 140nm.
This embodiment obtain dislocation film layer antireflection structure, angle of incidence be respectively 0 °, 10 °, 20 °, 30 °, 40 °, 50 °,
When 60 °, wave-length coverage is respectively for calculating its average reflectance by time-domain finite difference during 300nm-2500nm
6.24%th, 6.23%, 6.12%, 5.74%, 5.72%, 5.70%, 6.73%.
The above be only the preferred embodiment of the present invention it should be pointed out that：Ordinary skill people for the art
For member, under the premise without departing from the principles of the invention, some improvements and modifications can also be made, these improvements and modifications also should
It is considered as protection scope of the present invention.
Claims (7)
1. a kind of dislocation film layer antireflection structure with broad-spectrum wide-angle characteristic it is characterised in that：By semiconductor base (1) and covering
Dislocation film layer composition thereon, described semiconductor base (1) upper surface has the nanometer rod structure of protrusion, described nanometer rod structure
Top be higher than described semiconductor base (1) surface, formed dislocation difference in height；Described dislocation film layer is along described semiconductor base
(1) surface and the laying of described nano-pillar structural top cover at least one of which.
2. the dislocation film layer antireflection structure with broad-spectrum wide-angle characteristic according to claim 1 it is characterised in that：Described mistake
Position film layer is made up of the first dislocation film layer (2) and the second dislocation film layer (3) successively, and described first dislocation film layer (2) covers in institute
State above semiconductor base (1), described second dislocation film layer (3) covers above the first dislocation film layer (2).
3. the dislocation film layer antireflection structure with broad-spectrum wide-angle characteristic according to claim 1 and 2 it is characterised in that：Institute
State dislocation film layer same layer thickness is uniform, material is identical；Between described dislocation film layer is adjacent, the material of each layer is different, is located at
The refractive index of the described dislocation film layer on upper strata is less than the refractive index of the described dislocation film layer positioned at lower floor.
4. the dislocation film layer antireflection structure with broad-spectrum wide-angle characteristic according to claim 1 it is characterised in that：Described mistake
Position film layer can arrange different thickness according to Refractive Index of Material difference.
5. the dislocation film layer antireflection structure with broad-spectrum wide-angle characteristic according to claim 1 it is characterised in that：Described half
The material of conductor substrate (1) and its nanometer rod structure having is identical, is all fabricated from a silicon.
6. the dislocation film layer antireflection structure with broad-spectrum wide-angle characteristic according to claim 1 it is characterised in that：Described
The nanometer rod structure that semiconductor base (1) has has certain arrangement mode, can be six square array arrangements, and periodic array is arranged
Row or random alignment.
7. the dislocation film layer antireflection structure with broad-spectrum wide-angle characteristic according to claim 1 it is characterised in that：Described receive
Nanometer intercolumniation in rice rod structure is 300～600nm, and nanometer column diameter is 0.5～0.7 with the ratio of spacing, nanometer pillar height
Degree is 0.5～0.8 with the ratio of spacing.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610793539.6A CN106409932B (en) | 2016-08-30 | 2016-08-30 | A kind of dislocation film layer antireflection structure with broad-spectrum wide-angle characteristic |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610793539.6A CN106409932B (en) | 2016-08-30 | 2016-08-30 | A kind of dislocation film layer antireflection structure with broad-spectrum wide-angle characteristic |
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| Publication Number | Publication Date |
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| CN106409932A true CN106409932A (en) | 2017-02-15 |
| CN106409932B CN106409932B (en) | 2017-11-07 |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6002700A (en) * | 1996-08-30 | 1999-12-14 | Ricoh Company, Ltd. | Optical semiconductor device having a multilayer reflection structure |
| CN101219770A (en) * | 2008-01-07 | 2008-07-16 | 江苏大学 | Laser modeling method for semiconductor material micro-nano multi-scale function surface |
| CN102074591A (en) * | 2010-12-02 | 2011-05-25 | 中国科学院苏州纳米技术与纳米仿生研究所 | Composite micro-nano photon structure for enhancing absorption efficiency of solar cell and manufacturing method thereof |
| CN103762248A (en) * | 2014-01-23 | 2014-04-30 | 中国科学院半导体研究所 | Solar cell component with anti-reflective coating and preparation method thereof |
-
2016
- 2016-08-30 CN CN201610793539.6A patent/CN106409932B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6002700A (en) * | 1996-08-30 | 1999-12-14 | Ricoh Company, Ltd. | Optical semiconductor device having a multilayer reflection structure |
| CN101219770A (en) * | 2008-01-07 | 2008-07-16 | 江苏大学 | Laser modeling method for semiconductor material micro-nano multi-scale function surface |
| CN102074591A (en) * | 2010-12-02 | 2011-05-25 | 中国科学院苏州纳米技术与纳米仿生研究所 | Composite micro-nano photon structure for enhancing absorption efficiency of solar cell and manufacturing method thereof |
| CN103762248A (en) * | 2014-01-23 | 2014-04-30 | 中国科学院半导体研究所 | Solar cell component with anti-reflective coating and preparation method thereof |
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| CN106409932B (en) | 2017-11-07 |
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