CN106409451A - PTC (Positive Temperature Coefficient) resistor based on polyphenylene sulfide and preparation method of PTC resistor - Google Patents

PTC (Positive Temperature Coefficient) resistor based on polyphenylene sulfide and preparation method of PTC resistor Download PDF

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Publication number
CN106409451A
CN106409451A CN201610437536.9A CN201610437536A CN106409451A CN 106409451 A CN106409451 A CN 106409451A CN 201610437536 A CN201610437536 A CN 201610437536A CN 106409451 A CN106409451 A CN 106409451A
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preparation
polyphenylene sulfide
weight portion
ptc resistor
consumption
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CN106409451B (en
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肖旭东
汪泽
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Jiangsu hot air environmental protection technology Co.,Ltd.
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Wuhu Chang Qilu Industry Co Ltd
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01CRESISTORS
    • H01C7/00Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/02Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having positive temperature coefficient
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01CRESISTORS
    • H01C17/00Apparatus or processes specially adapted for manufacturing resistors
    • H01C17/06Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01CRESISTORS
    • H01C17/00Apparatus or processes specially adapted for manufacturing resistors
    • H01C17/06Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base
    • H01C17/065Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thick film techniques, e.g. serigraphy
    • H01C17/06506Precursor compositions therefor, e.g. pastes, inks, glass frits
    • H01C17/06573Precursor compositions therefor, e.g. pastes, inks, glass frits characterised by the permanent binder
    • H01C17/06586Precursor compositions therefor, e.g. pastes, inks, glass frits characterised by the permanent binder composed of organic material
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01CRESISTORS
    • H01C7/00Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/02Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having positive temperature coefficient
    • H01C7/028Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having positive temperature coefficient consisting of organic substances

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Ceramic Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Manufacturing & Machinery (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Organic Insulating Materials (AREA)

Abstract

The invention discloses a PTC (Positive Temperature Coefficient) resistor based on polyphenylene sulfide and a preparation method of the PTC resistor. The preparation method comprises the steps of 1) placing strontium carbonate, strontium titanate and yttrium oxide in an alkali liquid for immersion, performing filtering, taking out a filter cake, washing the filter cake, placing the filter cake after being washed in an amino acid solution for modification to obtain a modified composition; 2) dispersing graphene in water, adding sulfanilic acid and vanadium pentoxide for sulfonation reaction to obtain sulfonated graphene; and 3) dissolving polyphenylene sulfide and maleic anhydride grafted polyethylene in an organic solvent, adding the modified com position, the sulfonated graphene and a carbon nanotube to a system, performing ultrasonic oscillation, performing evaporation to remove the organic solvent to obtain the PTC resistor based on the polyphenylene sulfide. The PTC resistor has the advantages of excellent mechanical strength, resistance stability, processability and reproducibility.

Description

PTC resistor based on polyphenylene sulfide and preparation method thereof
Technical field
The present invention relates to ptc material, in particular it relates to a kind of PTC resistor based on polyphenylene sulfide and Its preparation method.
Background technology
PTC resistor refers to semistor, abbreviation PTC thermistor.PTC temperature-sensitive Resistance is the semiconductor resistor that a kind of typical case has temperature sensitivity, exceedes certain temperature (Curie temperature) When, its resistance value is in increasing of step evolution with the rising of temperature.PTC resistor is according to its material properties Divided, ceramic PTC resistance and high molecular PTC resistance can be divided into.
Ceramic PTC resistance has excellent mechanical strength and resistance stability, can be at relatively high temperatures Use;But it also has weak point, it is that resistivity at a lower temperature is larger, such as room temperature electricity Resistance rate is in 20-2.0 × 104Ω m, and rigidity is big, complex forming technology and be difficult to make banding.High score Sub- PTC resistor has performance and the low cost of excellent electricity and processing and forming;But, its resistivity Less stable and processing repeatability poor.
Content of the invention
It is an object of the invention to provide a kind of PTC resistor based on polyphenylene sulfide and preparation method thereof, lead to Cross the method be obtained PTC resistor have excellent mechanical strength, resistance stability, processing characteristics and Repeatability, simultaneously this preparation method have the advantages that easy and simple to handle, raw material is easy to get and mild condition.
To achieve these goals, the invention provides a kind of system of the PTC resistor based on polyphenylene sulfide Preparation Method, this preparation method includes:
1) strontium carbonate, strontium titanates and yittrium oxide are placed in alkali liquor and soak, then filter and take filter cake clear Wash, then the filter cake after cleaning is placed in and is modified in Freamine Ⅲ to obtain the work of improved composition Sequence;
2) disperse graphene in water, be subsequently added into p-aminobenzene sulfonic acid and vanadic anhydride carries out sulphur Change the operation being reacted to give sulfonated graphene;
3) in the presence of shielding gas:Polyphenylene sulfide and maleic anhydride scion grafting polyethylene are dissolved in organic In solvent, in system, then add improved composition, sulfonated graphene and CNT and carry out ultrasonic Concussion, then evaporative removal organic solvent is to obtain the operation of the PTC resistor based on polyphenylene sulfide.
Present invention also offers a kind of PTC resistor based on polyphenylene sulfide, this PTC resistor passes through above-mentioned Method be prepared.
By technique scheme, the present invention first passes through and forms to by strontium carbonate, strontium titanates and yittrium oxide Compositionss carry out surface modification, and then make the surface modification of compositionss have amino acid group;Then right The modifying surface of Graphene, and then make the surface enrichment of the sulfonated graphene being obtained have p-aminophenyl Sulfo group;Finally, so that modified group in the solution of polyphenylene sulfide and maleic anhydride scion grafting polyethylene composition Compound contacts with each other reaction sulfonated graphene, and simultaneous reactions thing and CNT equably divide in the solution Dissipate, organic solvent removes the PTC resistor just having obtained based on polyphenylene sulfide the most at last.By the method Prepared PTC resistor has ceramic PTC resistance and the advantage of high molecular PTC resistance concurrently, that is, have excellent Mechanical strength, resistance stability, processing characteristics and repeatability.In addition, this preparation method has operation Easy, raw material be easy to get and mild condition advantage.
Other features and advantages of the present invention will be described in detail in subsequent specific embodiment part.
Specific embodiment
Hereinafter the specific embodiment of the present invention is described in detail.It should be appreciated that this place is retouched The specific embodiment stated is merely to illustrate and explains the present invention, is not limited to the present invention.
The invention provides a kind of preparation method of the PTC resistor based on polyphenylene sulfide, this preparation method Including:
1) strontium carbonate, strontium titanates and yittrium oxide are placed in alkali liquor and soak, then filter and take filter cake clear Wash, then the filter cake after cleaning is placed in and is modified in Freamine Ⅲ to obtain the work of improved composition Sequence;
2) disperse graphene in water, be subsequently added into p-aminobenzene sulfonic acid and vanadic anhydride (rises and urges The effect of agent) carry out sulfonating reaction to obtain the operation of sulfonated graphene;
3) in the presence of shielding gas:Polyphenylene sulfide and maleic anhydride scion grafting polyethylene are dissolved in organic In solvent, in system, then add improved composition, sulfonated graphene and CNT and carry out ultrasonic Concussion, then evaporative removal organic solvent is to obtain the operation of the PTC resistor based on polyphenylene sulfide.
Operation 1 in the present invention) in, the consumption of each material can select in wide scope, but is Improve mechanical strength, resistance stability, processing characteristics and the reproduction of prepared PTC resistor further Property is it is preferable that in operation 1) in, with respect to the strontium carbonate of 100 weight portions, the consumption of strontium titanates is 45-76 weight portion, the consumption of yittrium oxide is 22-31 weight portion.
Operation 1 in the present invention) in, the particle diameter of strontium carbonate, strontium titanates and yittrium oxide can be in wide model Enclose interior selection, but in order to improve further the mechanical strength of prepared PTC resistor, resistance stability, Processing characteristics and repeatability are it is preferable that in operation 1) in, the grain of strontium carbonate, strontium titanates and yittrium oxide Footpath is each independently 0.1-0.5mm.
Operation 1 in the present invention) in, the species of alkali liquor can select in wide scope, but in order to Improve mechanical strength, resistance stability, processing characteristics and the repeatability of prepared PTC resistor further, Preferably, in operation 1) in, the pH of alkali liquor is 12-14, and is sodium hydroxide solution and/or hydrogen Potassium oxide solution.
Operation 1 in the present invention) in, the actual conditions of immersion can select in wide scope, but In order to improve mechanical strength, resistance stability, processing characteristics and the weight of prepared PTC resistor further Existing property is it is preferable that in operation 1) in, soak and at least meet following condition:Soaking temperature is 40-60 DEG C, Soak time is 2-4h.
Operation 1 in the present invention) in, the concrete species actual conditions of Freamine Ⅲ can be in wide model Enclose interior selection, but in order to improve further the mechanical strength of prepared PTC resistor, resistance stability, Processing characteristics and repeatability are it is preferable that in operation 1) in, the concentration of Freamine Ⅲ is 0.1-0.2mol/L, And it is molten selected from alanine solution, valine solution, leucine solution, isoleucine solution, proline One or more of liquid and Phe solution.
Operation 1 in the present invention) in, modified actual conditions actual conditions can select in wide scope Select, but in order to improve the mechanical strength of prepared PTC resistor, resistance stability, processing further Performance and repeatability are it is preferable that in operation 1) in, modification at least meets following condition:Modification temperature For 75-90 DEG C, modification time is 5-7h.
Operation 2 in the present invention) in, the consumption of each material can select in wide scope, but is Improve mechanical strength, resistance stability, processing characteristics and the reproduction of prepared PTC resistor further Property is it is preferable that in operation 2) in, with respect to the Graphene of 100 weight portions, p-aminobenzene sulfonic acid Consumption is 30-40 weight portion, and the consumption of vanadic anhydride is 1-3 weight portion, and the consumption of water is 2000-5000 Weight portion.
Operation 2 in the present invention) in, the actual conditions of sulfonating reaction can select in wide scope, But in order to improve the mechanical strength of prepared PTC resistor, resistance stability, processing characteristics further With repeatability it is preferable that in operation 2) in, sulfonating reaction at least meets following condition:Reaction temperature For 110-125 DEG C, the response time is 3-5h.
Operation 3 in the present invention) in, the concrete consumption of each material can select in wide scope, but Be in order to improve further the mechanical strength of prepared PTC resistor, resistance stability, processing characteristics and Repeatability is it is preferable that in operation 3) in, with respect to the polyphenylene sulfide of 100 weight portions, maleic anhydride The consumption of scion grafting polyethylene is 15-40 weight portion, and the consumption of improved composition is 20-28 weight portion, sulphur The consumption of graphite alkene is 11-17 weight portion, and the consumption of CNT is 2-6 weight portion, organic solvent Consumption be 300-600 weight portion.
Operation 3 in the present invention) in, the size of CNT can select in wide scope, but In order to improve mechanical strength, resistance stability, processing characteristics and the weight of prepared PTC resistor further Existing property is it is preferable that in operation 3) in, the size of CNT is:A diameter of 25-35nm, length For 25-30 μm.
Operation 3 in the present invention) in, the actual conditions of ultrasonic vibration can select in wide scope, But in order to improve the mechanical strength of prepared PTC resistor, resistance stability, processing characteristics further With repeatability it is preferable that in operation 3) in, ultrasonic vibration at least meets following condition:Concussion frequency For 10-20MHz, the concussion time is 50-80min, and concussion temperature is 20-40 DEG C.
Operation 3 in the present invention) in, the actual conditions of evaporation can select in wide scope, but In order to improve mechanical strength, resistance stability, processing characteristics and the weight of prepared PTC resistor further Existing property is it is preferable that in operation 3) in, evaporation at least meets following condition:Evaporating temperature is 130-150 DEG C, Evaporation time is 2-4h.
Operation 3 in the present invention) in, the concrete species of shielding gas can select in wide scope, but Be in order to improve further the mechanical strength of prepared PTC resistor, resistance stability, processing characteristics and Repeatability is it is preferable that in operation 3) in, shielding gas be selected from one of nitrogen, argon, helium or Multiple.
Operation 3 in the present invention) in, the concrete species of organic solvent can select in wide scope, But in order to improve the mechanical strength of prepared PTC resistor, resistance stability, processing characteristics further With repeatability it is preferable that in operation 3) in, organic solvent is selected from dimethylformamide, dimethyl second One or more of amide, propionitrile.
Present invention also offers a kind of PTC resistor based on polyphenylene sulfide, this PTC resistor passes through above-mentioned Method be prepared.
Hereinafter will be described the present invention by embodiment.
Embodiment 1
1) by the strontium carbonate for 0.3mm for the particle diameter, particle diameter be 0.2mm strontium titanates and particle diameter be 0.4mm Yittrium oxide be placed in the alkali liquor that 50 DEG C and pH is 13 soak 3h (strontium carbonate, strontium titanates, yittrium oxide, The weight of alkali liquor is than for 100:66:27:500), then filter and clean filter cake with water, then will be clear Filter cake after washing is placed in 0.15mol/L and 80 DEG C of Freamine Ⅲ (alanine solution, filter cake and amino The weight of acid solution is than for 1:4) it is modified 6h in obtain improved composition;
2) disperse graphene in water, be subsequently added into p-aminobenzene sulfonic acid and vanadic anhydride (graphite Alkene, p-aminobenzene sulfonic acid, vanadic anhydride, the weight of water are than for 100:35:2:4000) and in 115 DEG C carry out sulfonating reaction 4h, finally filter and remove unnecessary reactant and vanadic anhydride to obtain Sulfonated graphene;
3) in the presence of shielding gas (nitrogen):Will be molten to polyphenylene sulfide and maleic anhydride scion grafting polyethylene Solution, in organic solvent (dimethylformamide), then adds improved composition, sulfonation stone in system (size of CNT is for black alkene and CNT:A diameter of 30nm, length is 27 μm;Polyphenylene sulfide Ether, maleic anhydride scion grafting polyethylene, the weight ratio of improved composition, sulfonated graphene and CNT are 100:30:25:15:4:400) and carry out ultrasonic vibration (concussion frequency be 15MHz, during concussion Between be 70min, concussion temperature be 30 DEG C), then at 140 DEG C evaporation 3h remove organic solvent with To the PTC resistor A1 based on polyphenylene sulfide.
Embodiment 2
1) by the strontium carbonate for 0.1mm for the particle diameter, particle diameter be 0.1mm strontium titanates and particle diameter be 0.1mm Yittrium oxide be placed in the alkali liquor that 40 DEG C and pH is 12 soak 2h (strontium carbonate, strontium titanates, yittrium oxide, The weight of alkali liquor is than for 100:45:22:400), then filter and clean filter cake with water, then will be clear Filter cake after washing is placed in 0.1mol/L and 75 DEG C of Freamine Ⅲ (leucine solution, filter cake and amino The weight of acid solution is than for 1:3) it is modified 5h in obtain improved composition;
2) disperse graphene in water, be subsequently added into p-aminobenzene sulfonic acid and vanadic anhydride (graphite Alkene, p-aminobenzene sulfonic acid, vanadic anhydride, the weight of water are than for 100:30:1:2000) and in 110 DEG C carry out sulfonating reaction 3h, finally filter and remove unnecessary reactant and vanadic anhydride to obtain Sulfonated graphene;
3) in the presence of shielding gas (argon):Will be molten to polyphenylene sulfide and maleic anhydride scion grafting polyethylene Solution, in organic solvent (dimethyl acetylamide), then adds improved composition, sulfonation stone in system (size of CNT is for black alkene and CNT:A diameter of 25nm, length is 25 μm;Polyphenylene sulfide Ether, maleic anhydride scion grafting polyethylene, the weight ratio of improved composition, sulfonated graphene and CNT are 100:15:20:11:2:300) and carry out ultrasonic vibration (concussion frequency be 10MHz, during concussion Between be 50min, concussion temperature be 20 DEG C), then at 130 DEG C evaporation 2h remove organic solvent with To the PTC resistor A2 based on polyphenylene sulfide.
Embodiment 3
1) by the strontium carbonate for 0.5mm for the particle diameter, particle diameter be 0.5mm strontium titanates and particle diameter be 0.5mm Yittrium oxide be placed in the alkali liquor that 60 DEG C and pH is 14 soak 4h (strontium carbonate, strontium titanates, yittrium oxide, The weight of alkali liquor is than for 100:76:31:600), then filter and clean filter cake with water, then will be clear Filter cake after washing is placed in 0.2mol/L and 90 DEG C of Freamine Ⅲ (Phe solution, filter cake and ammonia The weight of base acid solution is than for 1:5) it is modified 7h in obtain improved composition;
2) disperse graphene in water, be subsequently added into p-aminobenzene sulfonic acid and vanadic anhydride (graphite Alkene, p-aminobenzene sulfonic acid, vanadic anhydride, the weight of water are than for 100:40:3:5000) and in 125 DEG C carry out sulfonating reaction 5h, finally filter and remove unnecessary reactant and vanadic anhydride to obtain Sulfonated graphene;
3) in the presence of shielding gas (helium):Will be molten to polyphenylene sulfide and maleic anhydride scion grafting polyethylene Solution, in organic solvent (propionitrile), then adds improved composition, sulfonated graphene and carbon in system (size of CNT is nanotube:A diameter of 35nm, length is 30 μm;Polyphenylene sulfide, Malaysia Anhydride scion grafting polyethylene, the weight of improved composition, sulfonated graphene and CNT are than for 100:40: 28:17:6:600) and carry out ultrasonic vibration (concussion frequency be 20MHz, the concussion time be 80min, Concussion temperature is 40 DEG C), then at 150 DEG C, evaporation 2-4h removes organic solvent to obtain based on polyphenyl The PTC resistor A3 of thioether.
Comparative example 1
Method according to embodiment 1 carries out PTC resistor B1, except for the difference that, step 1 are obtained) in not Using strontium carbonate.
Comparative example 2
Method according to embodiment 1 carries out PTC resistor B2, except for the difference that, step 1 are obtained) in not Using strontium titanates.
Comparative example 3
Method according to embodiment 1 carries out PTC resistor B3, except for the difference that, step 1 are obtained) in not Using yittrium oxide.
Comparative example 4
Method according to embodiment 1 carries out PTC resistor B4, except for the difference that, step 1 are obtained) in not Carry out amino-acid modified.
Comparative example 5
Method according to embodiment 1 carries out PTC resistor B5, except for the difference that, step 2 are obtained) in not Carry out sulfonating reaction.
Comparative example 6
Method according to embodiment 1 carries out PTC resistor B6, except for the difference that, step 3 are obtained) in not Using sulfonated graphene.
Comparative example 7
Method according to embodiment 1 carries out PTC resistor B7, except for the difference that, step 3 are obtained) in not Using CNT.
Detection example 1
Detect the mechanical strength of above-mentioned PTC resistor, detect the Curie temperature of above-mentioned PTC resistor simultaneously; Count the coefficient of variation σ of the Curie temperature of same 1000 PTC resistor of batch, concrete outcome is shown in simultaneously Table 1.
Table 1
Tensile strength/Mpa Curie temperature/DEG C Coefficient of variation σ
A1 45 37 0.01
A2 48 38 0.02
A3 50 36 0.01
B1 34 48 0.12
B2 28 49 0.21
B3 31 44 0.23
B4 25 50 0.24
B5 27 66 0.18
B6 30 59 0.33
B7 22 60 0.37
By above-described embodiment, comparative example and detection example, present invention offer based on polyphenylene sulfide PTC resistor be synergism by component each in preparation method and each step so that its have excellent Mechanical strength, resistance stability, processing characteristics and repeatability.
The preferred embodiment of the present invention described in detail above, but, the present invention is not limited to above-mentioned reality Apply the detail in mode, in the range of the technology design of the present invention, can be to the technical side of the present invention Case carries out multiple simple variant, and these simple variant belong to protection scope of the present invention.
It is further to note that each particular technique described in above-mentioned specific embodiment is special Levy, in the case of reconcilable, can be combined by any suitable means, in order to avoid need not The repetition wanted, the present invention no longer separately illustrates to various possible compound modes.
Additionally, combination in any can also be carried out between the various different embodiment of the present invention, as long as its Without prejudice to the thought of the present invention, it equally should be considered as content disclosed in this invention.

Claims (10)

1. a kind of preparation method of the PTC resistor based on polyphenylene sulfide is it is characterised in that include:
1) strontium carbonate, strontium titanates and yittrium oxide are placed in alkali liquor and soak, then filter and take filter cake clear Wash, then the described filter cake after cleaning is placed in Freamine Ⅲ and is modified to obtain improved composition Operation;
2) disperse graphene in water, be subsequently added into p-aminobenzene sulfonic acid and vanadic anhydride carries out sulphur Change the operation being reacted to give sulfonated graphene;
3) in the presence of shielding gas:Polyphenylene sulfide and maleic anhydride scion grafting polyethylene are dissolved in organic In solvent, in system, then add described improved composition, sulfonated graphene and CNT and carry out Ultrasonic vibration, then evaporative removal organic solvent is to obtain the described PTC resistor based on polyphenylene sulfide Operation.
2. preparation method according to claim 1, wherein, in operation 1) in, with respect to 100 The described strontium carbonate of weight portion, the consumption of described strontium titanates is 45-76 weight portion, the use of described yittrium oxide Measure as 22-31 weight portion;
Preferably, in operation 1) in, the particle diameter of described strontium carbonate, strontium titanates and yittrium oxide is each independent Ground is 0.1-0.5mm.
3. preparation method according to claim 1, wherein, in operation 1) in, described alkali liquor PH is 12-14, and is sodium hydroxide solution and/or potassium hydroxide solution;
Preferably, in operation 1) in, described immersion at least meets following condition:Soaking temperature is 40-60 DEG C, Soak time is 2-4h.
4. preparation method according to claim 1, wherein, in operation 1) in, described aminoacid The concentration of solution is 0.1-0.2mol/L, and molten selected from alanine solution, valine solution, leucine One or more of liquid, isoleucine solution, proline solution and Phe solution;
Preferably, in operation 1) in, described modification at least meets following condition:Modification temperature is 75-90 DEG C, Modification time is 5-7h.
5. the preparation method according to any one in claim 1-4, wherein, in operation 2) in, With respect to the described Graphene of 100 weight portions, the consumption of described p-aminobenzene sulfonic acid is 30-40 weight portion, The consumption of described vanadic anhydride is 1-3 weight portion, and the consumption of described water is 2000-5000 weight portion;
Preferably, in operation 2) in, described sulfonating reaction at least meets following condition:Reaction temperature is 110-125 DEG C, the response time is 3-5h.
6. preparation method according to claim 5, wherein, in operation 3) in, with respect to 100 The described polyphenylene sulfide of weight portion, the consumption of described maleic anhydride scion grafting polyethylene is 15-40 weight portion, The consumption of described improved composition is 20-28 weight portion, and the consumption of described sulfonated graphene is 11-17 weight Amount part, the consumption of described CNT is 2-6 weight portion, and the consumption of described organic solvent is 300-600 Weight portion.
7. preparation method according to claim 6, wherein, in operation 3) in, described carbon nanometer The size of pipe is:A diameter of 25-35nm, length is 25-30 μm.
8. preparation method according to claim 7, wherein, in operation 3) in, described ultrasonic shake Swing and at least meet following condition:Concussion frequency is 10-20MHz, and the concussion time is 50-80min, concussion Temperature is 20-40 DEG C.
9. the preparation method according to claim 6 or 7, wherein, in operation 3) in, described steaming It is sent to and meet following condition less:Evaporating temperature is 130-150 DEG C, and evaporation time is 2-4h.
10. a kind of PTC resistor based on polyphenylene sulfide is it is characterised in that described PTC resistor passes through Method described in any one in claim 1-9 is prepared.
CN201610437536.9A 2016-06-18 2016-06-18 PTC resistor based on polyphenylene sulfide and preparation method thereof Active CN106409451B (en)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107629456A (en) * 2017-09-19 2018-01-26 苏州南尔材料科技有限公司 A kind of preparation method of carbon silicon doping PPS thermistors
CN111768894A (en) * 2020-07-28 2020-10-13 唐山烯彤科技有限公司 Carbon conductive slurry and preparation method thereof
CN114212819A (en) * 2021-12-16 2022-03-22 福州大学 Radial vanadium pentoxide cooperatively constructed by high molecular chain segment and small molecule and application thereof on capacitor electrode

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1456047A (en) * 1972-12-29 1976-11-17 Raychem Corp Voltage stress-resistant conductive articles
JPH0435001A (en) * 1990-05-31 1992-02-05 Meidensha Corp Positive temperature coefficient resistor material
CN101819837A (en) * 2009-02-27 2010-09-01 上海科特功能材料有限公司 Over-current and over-temperature protection element with positive temperature coefficient and preparation method thereof
WO2012003661A1 (en) * 2010-07-08 2012-01-12 上海长园维安电子线路保护股份有限公司 Conductive composite material with positive temperature coefficient of resistance and over-current protection component
CN104016675A (en) * 2014-06-20 2014-09-03 电子科技大学 BaTiO3-based PTC (Positive Temperature Coefficient) ceramic powder, lamellar thermal resistor and preparation method thereof

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1456047A (en) * 1972-12-29 1976-11-17 Raychem Corp Voltage stress-resistant conductive articles
JPH0435001A (en) * 1990-05-31 1992-02-05 Meidensha Corp Positive temperature coefficient resistor material
CN101819837A (en) * 2009-02-27 2010-09-01 上海科特功能材料有限公司 Over-current and over-temperature protection element with positive temperature coefficient and preparation method thereof
WO2012003661A1 (en) * 2010-07-08 2012-01-12 上海长园维安电子线路保护股份有限公司 Conductive composite material with positive temperature coefficient of resistance and over-current protection component
CN104016675A (en) * 2014-06-20 2014-09-03 电子科技大学 BaTiO3-based PTC (Positive Temperature Coefficient) ceramic powder, lamellar thermal resistor and preparation method thereof

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107629456A (en) * 2017-09-19 2018-01-26 苏州南尔材料科技有限公司 A kind of preparation method of carbon silicon doping PPS thermistors
CN111768894A (en) * 2020-07-28 2020-10-13 唐山烯彤科技有限公司 Carbon conductive slurry and preparation method thereof
CN111768894B (en) * 2020-07-28 2021-10-08 唐山烯彤科技有限公司 Carbon conductive slurry and preparation method thereof
CN114212819A (en) * 2021-12-16 2022-03-22 福州大学 Radial vanadium pentoxide cooperatively constructed by high molecular chain segment and small molecule and application thereof on capacitor electrode
CN114212819B (en) * 2021-12-16 2023-06-30 福州大学 Radial vanadium pentoxide and application thereof to capacitor electrode

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