CN106399938A - Preparation method for cubic boron nitride film - Google Patents
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- CN106399938A CN106399938A CN201610914489.2A CN201610914489A CN106399938A CN 106399938 A CN106399938 A CN 106399938A CN 201610914489 A CN201610914489 A CN 201610914489A CN 106399938 A CN106399938 A CN 106399938A
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0641—Nitrides
- C23C14/0647—Boron nitride
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
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Abstract
The invention discloses a preparation method for a cubic boron nitride film and belongs to the field of super-hard film materials. According to the preparation method, radio frequency sputtering is conducted by adopting Si chips as a substrate and hBN as a target, and the method comprises the following steps of (1) substrate pre-sputtering with inert gas serving as the sputtering gas, the sputtering power being 160-400W, the substrate negative bias being minus 280 to minus 350V, the substrate temperature being 500 DEG C, the pre-vacuum degree being 1.3x10<-3>-2x10<-3>Pa, the working pressure being 1.3-2Pa, and the sputtering time being 5-15min; (2) film nucleation with mixed gas of the inert gas and N2 serving as the sputtering gas, the sputtering power being 100-400W, the substrate negative bias being minus 200 to minus 300V, the substrate temperature being 400-600 DEG C, the pre-vacuum degree being 1x10<-3>-2x10<-3>Pa, the working pressure being 1.33-2Pa, and the sputtering time being 15-45min; (3) film growth mixed gas of nitrogen or the inert gas and the N2 serving as the sputtering gas, the sputtering power being 200-400W, the substrate negative bias being minus 130 to minus 200V, the substrate temperature being 200-300 DEG C, the pre-vacuum degree being 1x10<-3>-2x10<-3>Pa, the working pressure being 0.6-1.5Pa, and the sputtering time being 45-120min; and (4) annealing.
Description
Technical field
The invention belongs to super-hard film material field is and in particular to a kind of preparation method of cubic boron nitride film.
Background technology
Cubic boron nitride（cBN）It is the synthetic material that a kind of hardness is only second to diamond, its non-oxidizability, chemistry are steady
Qualitative and characteristic of semiconductor is superior to diamond；Meanwhile, its coefficient of friction is little, thermal conductivity is high and not affine with Ferrious material, fits
Close the coating doing cutter, grinding tool；Further, since cBN has very wide forbidden band（Eg=6.4eV）, can be doped to as p-type or n
Type semiconductor, and the doping of the N-shaped of diamond is very difficult, so cBN has in terms of high temperature, high frequency, powerful electronic device
Very big application prospect.Therefore, the preparation research of cBN film becomes one of the heat subject in material and physics field.
High Emission in Cubic can be prepared by the method for physical vapour deposition (PVD) or chemical vapor deposition in laboratory at present
Content, degree of crystallinity preferable cBN film, but all there is poor repeatability in preparation process.Its main cause is that cBN is thin
The nucleation of film and growth conditions are wayward, and especially nucleation window is especially narrow.
In cBN film, cubic phase content is higher, and the hardness of film layer, electric property, translucency etc. are better, therefore only guaranteed
In cBN film, the content of Emission in Cubic is as high as possible, and competence exertion cBN film, in the advantage of the aspect such as superhard, electronics, optics, has
With practical value.And the content of Emission in Cubic is subject to the technique such as back bias voltage, deposition atmosphere, underlayer temperature, target power in deposition process
The impact of parameter.
Prepare in high-quality cBN thin-film process, need to solve the phase transition process of hBN to cBN.And hBN directly changes to cBN
Need to cross over the high-energy potential barrier of 9.4eV；And hBN changes the energy that only need to cross over 1.43eV and 7.8eV respectively to wBN and rBN
Potential barrier；Once hBN is changed into wBN, being changed into cBN by wBN then needs to cross over the energy barrier of a 7.4eV, but rBN to
CBN conversion only needs to cross over the energy barrier of 0.76eV, and relatively easily much, the therefore present invention bright employing three-step approach strictly controls
The nucleation of cBN film and growth conditions, obtain high-quality Emission in Cubic cBN by hBN → rBN → cBN（Cubic boron nitride）,
Solve the problems, such as poor repeatability in membrane-film preparation process.
Content of the invention
It is an object of the invention to provide a kind of preparation method of the cubic boron nitride film of high cubic phase content.
Based on above-mentioned purpose, the present invention employs the following technical solutions：A kind of preparation method of cubic boron nitride film, with Si
Chip is substrate, hBN is target, inert gas or inert gas and N2Mixed gas be sputter gas, comprise the following steps：
（1）Substrate pre-sputtering：Sputtering power 160-400W, substrate DC bias -280 ~ -350V, 500 DEG C of underlayer temperature, forevacuum
Degree 1.3 × 10-3~2×10-3Pa, operating air pressure 1.3 ~ 2Pa, sputtering time 5 ~ 15min；
（2）Film nucleation：Sputtering power is 100-400W, substrate DC bias -200 ~ -300V, 400 ~ 600 DEG C of underlayer temperature, in advance
Vacuum 1 × 10-3~2×10-3Pa, operating air pressure 1.3 ~ 2Pa, sputtering time 15 ~ 45min.
（3）Film grows：Sputtering power 200-400W, substrate DC bias -130 ~ -200V, 200 ~ 300 DEG C of underlayer temperature,
Forevacuum degree 1 × 10-3~2×10-3Pa, operating air pressure 0.6 ~ 1.5Pa, sputtering time 45-120min；
（4）Annealing, alleviates the compression in film, provides energy to make it to cubic phase transition by annealing to film simultaneously.
Step（1）In, sputter gas are argon gas or helium；Step（2）In, sputter gas are the gaseous mixture of argon gas and nitrogen
Body, the volume fraction of nitrogen is 16.6% ~ 18.2%, step（3）In, inert gas and N2Mixed gas in nitrogen volume integral
Number is more than 10%.
Step（4）Annealing process carries out 30-90min at 2Pa vacuum, 400-1000 DEG C.
Described Si chip is p-type or N-shaped, the resistivity 5-90 cm of silicon wafer.
Described substrate is 5 ~ 7cm with the distance of target.
It is re-used as substrate after Si chip is carried out to use, cleaning process is：Use toluene, acetone, EtOH Sonicate successively
Cleaning silicon wafer 15min, finally silicon wafer is immersed in keep in Dark Place in analytically pure ethanol standby.
The content of Emission in Cubic is subject to the technological parameter such as back bias voltage, deposition atmosphere, underlayer temperature, target power in deposition process
Impact.The increase of deposition process back bias voltage is conducive to the increase of cubic phase content in film, but can make simultaneously defect in film layer,
Membrane stress increases, and leads to film quality to decline；The raising of underlayer temperature is conducive to the formation of Emission in Cubic, but too high substrate
Temperature can make B, N Atomic absorption heat energy being deposited on film escape from film surface again, is unfavorable for the deposition of film.
The cubic phase content that one-step method prepares is about 53%, film thickness about 500nm；Two-step method prepare cube
Close to 100%, film thickness is about 750nm to phase content, and corresponding compression decreases 4.67GPa, but poor repeatability.
And the present invention to prepare cBN film using three-step approach, it is to avoid the impact of comprehensive crossover factor, by controlling radio frequency
Sputter each stage process parameter, improve cubic phase content in the film of deposition, reduce deposition parameter should to film layer simultaneously
Power, bond strength, the adverse effect of microdefect, finally prepare the high-quality cBN film of high cubic phase content：The thickness of film
Degree reaches more than 800nm, and cubic phase content reaches more than 85%.
Reduce underlayer temperature after film nucleation and back bias voltage carries out film growth, reduce back bias voltage and can reduce energetic ion pair
The defect that substrate bombardment causes, reduces reverse sputtering, reduces the compression in film so that film is easier long thickness simultaneously；Reduce
Underlayer temperature can prevent the higher heat energy of B, N Atomic absorption from escaping from film, play condensation, equally accelerate film
Sedimentation rate；In addition the reduction of underlayer temperature also helps the minimizing of film compression.
Brief description
Fig. 1 is the cubic boron nitride film electron scanning micrograph of embodiment 1 preparation.
Specific embodiment
With reference to embodiment, the present invention is described in detail.
Embodiment 1
A kind of cubic boron nitride film is with N-shaped Si（111）Chip is substrate, and the resistivity of silicon wafer is 15 cm, and purity is
99.99% hot pressing hBN is target, and substrate is 5cm with the distance of target, prepares cubic boron nitride film.
The preparation process of cubic boron nitride film is：
（1）Substrate cleans：Clean silicon wafer 15min with toluene, acetone, EtOH Sonicate successively, all need before changing cleaning solvent every time
Deionized water to be used cleans up, finally silicon wafer is immersed in keep in Dark Place in analytically pure ethanol standby.
（2）Substrate pre-sputtering：Take out the silicon wafer cleaning from ethanol, after being dried with iodine-tungsten lamp, send into vacuum sputtering room
In, sputtering power 400W, substrate DC bias -280V, 500 DEG C of underlayer temperature, forevacuum degree 1.3 × 10-3Pa, operating air pressure
1.3Pa, sputtering time 5min, sputter gas are argon gas；
（3）Film nucleation：Sputtering power is 300W, substrate DC bias -240V, 500 DEG C of underlayer temperature, forevacuum degree 1.3 × 10-3Pa, operating air pressure 1.5Pa, sputter 20min, and sputter gas are the mixed gas of argon gas and nitrogen, and the volume fraction of nitrogen is
16.6%；
（4）Film grows：Sputtering power is 200W, and substrate DC bias are -130V, and underlayer temperature is 200 DEG C, forevacuum degree 1.3
×10-3Pa, operating air pressure is 1Pa, and sputtering time is 60min, and sputter gas are the mixed gas of argon gas and nitrogen, the body of nitrogen
Fraction is 10%；
（5）The compression in film is alleviated in vacuum high-temperature annealing, provides energy to make it to Emission in Cubic by annealing to film simultaneously
Change, annealing temperature is 800 DEG C, the indoor vacuum of sample is 2Pa, annealing time is 60min, the type of cooling takes insulation certainly
So cool down.
The thickness testing method of cubic boron nitride film can be with undamaged AFM (AFM) it is also possible to use
There is destructive SEM (SEM).AFM (AFM) is interatomic with sample surfaces by probe pinpoint
The change of faint active force, to observe surface texture, does not require to surface conductance property.SEM (SEM) is
By observing the cross section of sample, the pattern observing film layer directly perceived and thickness.The mensure of this patent selects SEM
(SEM) assay method.
The mensure of cubic phase content composes (FTIR) with fourier-transform infrared, and fourier-transform infrared spectrum is for detecting c-
Emission in Cubic (sp in BN film3Key) and hexagonal phase (sp2Key) a kind of directly, non-destructive analysis means, it is widely used
Composition and structural analysis in various thin-film materials.
The thickness recording above-mentioned cubic boron nitride film by SEM (SEM) is 850nm, is specifically shown in Fig. 1；
It is 92% by the cubic phase content that fourier-transform infrared spectrum (FTIR) records above-mentioned cubic boron nitride film.
Embodiment 2
A kind of cubic boron nitride film is with p-type Si（100）Chip is substrate, and the resistivity of silicon wafer is 15 cm, and purity is
99.99% hot pressing hBN is target, and substrate is 6cm with the distance of target, and the thickness of the cubic boron nitride film prepared is
900nm, cubic phase content is 88 %.
The preparation process of cubic boron nitride film is：
（1）Substrate cleans：Clean silicon wafer 15min with toluene, acetone, EtOH Sonicate successively, all need before changing cleaning solvent every time
Deionized water to be used cleans up, finally silicon wafer is immersed in keep in Dark Place in analytically pure ethanol standby.
（2）Substrate pre-sputtering：Take out the silicon wafer cleaning from ethanol, after being dried with iodine-tungsten lamp, send into vacuum sputtering room
In, sputtering power 160W, substrate DC bias -350V, 500 DEG C of underlayer temperature, forevacuum degree 2 × 10-3Pa, operating air pressure 2Pa, splash
Penetrate time 15min, sputter gas are argon gas；
（3）Film nucleation：Sputtering power is 400W, and substrate DC bias are -200V, and underlayer temperature is 600 DEG C, forevacuum degree 2 ×
10-3Pa, operating air pressure 2Pa, sputter 15min, and sputter gas are the mixed gas of argon gas and nitrogen, and the volume fraction of nitrogen is
18.2%；
（4）Film grows：Sputtering power is 400W, substrate DC bias -200V, 300 DEG C of underlayer temperature, forevacuum degree 2 × 10-
3Pa, operating air pressure 1.5Pa, sputtering time 60min sputter gas are the mixed gas of argon gas and nitrogen, the volume fraction of nitrogen
For 50%；
（5）The compression in film is alleviated in vacuum high-temperature annealing, provides energy to make it to Emission in Cubic by annealing to film simultaneously
Transformation, annealing temperature is 1000 DEG C, indoor vacuum 2Pa of sample, and annealing time is 90min, and the type of cooling takes insulation certainly
So cool down.
Embodiment 3
A kind of cubic boron nitride film is with p-type Si（100）Chip is substrate, and the resistivity of silicon wafer is 15 cm, and purity is
99.99% hot pressing hBN is target, and substrate is 7cm with the distance of target, and the thickness of the cubic boron nitride film prepared is
824nm, cubic phase content is 90%.
The preparation process of cubic boron nitride film is：
（1）Substrate cleans：Clean silicon wafer 15min with toluene, acetone, EtOH Sonicate successively, all need before changing cleaning solvent every time
Deionized water to be used cleans up, finally silicon wafer is immersed in keep in Dark Place in analytically pure ethanol standby.
（2）Substrate pre-sputtering：Take out the silicon wafer cleaning from ethanol, after being dried with iodine-tungsten lamp, send into vacuum sputtering room
In, sputtering power 400W, substrate DC bias -280V, 500 DEG C of underlayer temperature, forevacuum degree 1.310-3Pa, operating air pressure 1.3Pa,
Sputtering time 10min, sputter gas are argon gas；
（3）Film nucleation：Sputtering power is 100W, and substrate DC bias are -300V, and underlayer temperature is 400 DEG C, forevacuum degree 1 ×
10-3Pa, operating air pressure 1.3Pa, sputter 30min, and sputter gas are the mixed gas of argon gas and nitrogen, the volume fraction of nitrogen
For 17.5%；
（4）Film grows：Sputtering power is 300W, and substrate DC bias are -180V, and underlayer temperature is 260 DEG C, forevacuum degree 1.5
×10-3Pa, operating air pressure 1Pa, sputtering time 45min, sputter gas are nitrogen；
（5）The compression in film is alleviated in vacuum high-temperature annealing, provides energy to make it to Emission in Cubic by annealing to film simultaneously
Change, annealing temperature is 400 DEG C, the indoor vacuum of sample is 2Pa, annealing time is 30min, the type of cooling takes insulation certainly
So cool down.
Embodiment 4
A kind of cubic boron nitride film is with N-shaped Si（111）Chip is substrate, and the resistivity of silicon wafer is 80 cm, and purity is
99.99% hot pressing hBN is target, and substrate is 5cm with the distance of target, and the thickness of the cubic boron nitride film prepared is
950nm, cubic phase content is 92%.
The preparation process of cubic boron nitride film is：
（1）Substrate cleans：Clean silicon wafer 15min with toluene, acetone, EtOH Sonicate successively, all need before changing cleaning solvent every time
Deionized water to be used cleans up, finally silicon wafer is immersed in keep in Dark Place in analytically pure ethanol standby.
（2）Substrate pre-sputtering：Take out the silicon wafer cleaning from ethanol, after being dried with iodine-tungsten lamp, send into vacuum sputtering room
In, sputtering power 160W, substrate DC bias -350V, 500 DEG C of underlayer temperature, forevacuum degree 1.6 × 10-3Pa, operating air pressure 2Pa,
Sputtering time 12min, sputter gas are argon gas；
（3）Film nucleation：Sputtering power is 350W, and substrate DC bias are -280V, and underlayer temperature is 550 DEG C, forevacuum degree 1.8
×10-3Pa, operating air pressure 1.8Pa, sputter 15min, and sputter gas are the mixed gas of argon gas and nitrogen, the volume fraction of nitrogen
For 17.5%；
（4）Film grows：Sputtering power is 350W, substrate DC bias -180V, 280 DEG C of underlayer temperature, forevacuum degree 1.8 × 10-
3Pa, operating air pressure 1.2Pa, sputtering time 120min, sputter gas are the mixed gas of argon gas and nitrogen, the volume integral of nitrogen
Number is 80%；
（5）The compression in film is alleviated in vacuum high-temperature annealing, provides energy to make it to Emission in Cubic by annealing to film simultaneously
Change, annealing temperature is 600 DEG C, indoor vacuum 2Pa of sample, annealing time is 50min, the type of cooling takes insulation nature
Cooling.
Embodiment 5
A kind of cubic boron nitride film is with N-shaped Si（111）Chip is substrate, and the resistivity of silicon wafer is 5 cm, and purity is
99.99% hot pressing hBN is target, and substrate is 5cm with the distance of target, and the thickness of the cubic boron nitride film prepared is
970nm, cubic phase content is 89%.
The preparation process of cubic boron nitride film is：
（1）Substrate cleans：Clean silicon wafer 15min with toluene, acetone, EtOH Sonicate successively, all need before changing cleaning solvent every time
Deionized water to be used cleans up, finally silicon wafer is immersed in keep in Dark Place in analytically pure ethanol standby.
（2）Substrate pre-sputtering：Take out the silicon wafer cleaning from ethanol, after being dried with iodine-tungsten lamp, send into vacuum sputtering room
In, sputtering power 250W, substrate DC bias -300V, 500 DEG C of underlayer temperature, forevacuum degree 1.8 × 10-3Pa, operating air pressure
1.5Pa, sputtering time 12min, sputter gas are argon gas；
（3）Film nucleation：Sputtering power is 200W, and substrate DC bias are -230V, and underlayer temperature is 450 DEG C, forevacuum degree 1.3
×10-3Pa, operating air pressure 1.5Pa, sputter 30min, and sputter gas are the mixed gas of argon gas and nitrogen, the volume fraction of nitrogen
For 17.5%；
（4）Film grows：Sputtering power is 250W, substrate DC bias -150V, 230 DEG C of underlayer temperature, forevacuum degree 1.3 × 10-
3Pa, operating air pressure 0.8Pa, sputtering time 80min sputter gas are the mixed gas of argon gas and nitrogen, the volume fraction of nitrogen
For 80%；
（5）The compression in film is alleviated in vacuum high-temperature annealing, provides energy to make it to Emission in Cubic by annealing to film simultaneously
Change, annealing temperature is 600 DEG C, indoor vacuum 2Pa of sample, annealing time is 50min, the type of cooling takes insulation nature
Cooling.
Claims (6)
1. a kind of preparation method of cubic boron nitride film is it is characterised in that with Si chip as substrate, hBN penetrated for target
RF sputtering, comprises the following steps：
（1）Substrate pre-sputtering：Sputter gas are inert gas, sputtering power 160-400W, substrate DC bias -280 ~ -350V, lining
500 DEG C of bottom temperature, forevacuum degree 1.3 × 10-3~2×10-3Pa, operating air pressure 1.3 ~ 2Pa, sputtering time 5 ~ 15min；
（2）Film nucleation：Sputter gas are inert gas and N2Mixed gas, sputtering power 100-400W, substrate DC bias-
200 ~ -300V, 400 ~ 600 DEG C of underlayer temperature, forevacuum degree 1 × 10-3~2×10-3Pa, operating air pressure 1.33 ~ 2Pa, during sputtering
Between 15 ~ 45min；
（3）Film grows：Sputter gas are nitrogen or inert gas and N2Mixed gas, sputtering power 200-400W, substrate bear
Bias -130 ~ -200V, 200 ~ 300 DEG C of underlayer temperature, forevacuum degree 1 × 10-3~2×10-3Pa, operating air pressure 0.6 ~ 1.5Pa,
Sputtering time 45-120min；
（4）Annealing.
2. the preparation method of cubic boron nitride film according to claim 1 is it is characterised in that step（1）In, sputter gas
Body is argon gas or helium；Step（2）In, sputter gas are the mixed gas of argon gas and nitrogen, and the volume fraction of nitrogen is 16.6%
~ 18.2%, step（3）In, inert gas and N2Mixed gas in nitrogen volume fraction be more than 10%.
3. the preparation method of cubic boron nitride film according to claim 1 and 2 is it is characterised in that step（4）Annealed
Journey carries out 30-90min at 2Pa vacuum, 400-1000 DEG C.
4. the preparation method of cubic boron nitride film according to claim 3 is it is characterised in that described Si chip is p-type
Or N-shaped, the resistivity of silicon wafer is 5-90 cm.
5. the preparation method of cubic boron nitride film according to claim 4 is it is characterised in that described substrate and target
Distance is 5 ~ 7cm.
6. the preparation method of cubic boron nitride film according to claim 5 is it is characterised in that be carried out Si chip
After be re-used as substrate and use, cleaning process is：Clean silicon wafer 15min with toluene, acetone, EtOH Sonicate successively, finally by silicon
Chip be immersed in keep in Dark Place in analytically pure ethanol standby.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107164727A (en) * | 2017-06-05 | 2017-09-15 | 吉林大学 | A kind of adjustable BN of band gap（Al）Thin-film material and preparation method thereof |
| CN108425095A (en) * | 2018-03-16 | 2018-08-21 | 电子科技大学 | A kind of preparation method of crystal hexagonal boron nitride film |
| CN109750259A (en) * | 2019-02-27 | 2019-05-14 | 中国科学院兰州化学物理研究所 | Preparation method suitable for ultra-low friction magnetic control boron nitride composite lubricating film under water environment |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107164727A (en) * | 2017-06-05 | 2017-09-15 | 吉林大学 | A kind of adjustable BN of band gap（Al）Thin-film material and preparation method thereof |
| CN107164727B (en) * | 2017-06-05 | 2024-03-15 | 吉林大学 | BN (Al) film material with adjustable band gap and preparation method thereof |
| CN108425095A (en) * | 2018-03-16 | 2018-08-21 | 电子科技大学 | A kind of preparation method of crystal hexagonal boron nitride film |
| CN108425095B (en) * | 2018-03-16 | 2020-09-25 | 电子科技大学 | Preparation method of crystal hexagonal boron nitride film |
| CN109750259A (en) * | 2019-02-27 | 2019-05-14 | 中国科学院兰州化学物理研究所 | Preparation method suitable for ultra-low friction magnetic control boron nitride composite lubricating film under water environment |
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Application publication date: 20170215 |