CN106398697B - A method of changing quantum dot iridescent - Google Patents
A method of changing quantum dot iridescent Download PDFInfo
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- CN106398697B CN106398697B CN201510451563.7A CN201510451563A CN106398697B CN 106398697 B CN106398697 B CN 106398697B CN 201510451563 A CN201510451563 A CN 201510451563A CN 106398697 B CN106398697 B CN 106398697B
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- quantum dot
- thin film
- gold thin
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- nanoporous gold
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Abstract
The present invention discloses a kind of method changing quantum dot fluorescence emission spectrum, and quantum dot and the aperture of nanoporous gold thin film is compound, and quantum dot is placed on the inside of the aperture of nanoporous gold thin film.Include the following steps：(1) preparation of nanoporous gold thin film：Nanoporous gold thin film is prepared with de- alloyage；(2), CdSe quantum dot and nanoporous gold thin film is compound：Fluorescence emission peak by the above-mentioned means, can be modulated by the present invention.
Description
Technical field
The present invention relates to novel fluorescence light source and its regulation and control field, more particularly to a kind of change quantum dot fluorescence emission spectrums
Method.
Background technology
Quantum dot is a kind of semiconductor nano, is generally made of II-VI race or III-group Ⅴ element, grain size is general
Between 1~50nm.Since electrons and holes are all limited in three dimensions, quantum dot shows strong quantum
Confinement effect, continuous band structure become discrete energy level structure.Quantum dot can emit fluorescence after being excited.It is glimmering based on quantum dot
Optical emission spectroscopy, quantum dot are with a wide range of applications in solar cell, luminescent device, the fields such as optical bio label.
The method of Traditional control quantum dot emission spectrum is controlled generally by the size for changing quantum dot.This method needs
It expends considerable time and effort and carries out quantum dot Study on Preparation, and different quantum dot preparation processes are different, it is difficult
To find a kind of regulation and control that fluorescence emission spectrum progress of the universal method to quantum dot is continuous, easy.
Metal micro-nanostructure is under the outer light field effect of certain frequency, and collective oscillation will occur for internal free electron, excitation
Go out surface plasmon resonance.This resonance will change the electromagnetic field environment around metal micro-nanostructure.If quantum dot set
Under this electromagnetic field environment, it would be possible to that energy exchange occurs with this electromagnetic field environment, that is, couple.Stiffness of coupling
It is related to quantum dot concentration, quantum dot fluorescence service life, electromagnetic field quality factor, electromagnetic field effective model volume etc., it is strong when meeting
When coupling condition, the compound system of quantum dot and metal micro-nanostructure composition will generate electromagnetic induced transparency effect, at this point, fluorescence
Emission peak can be modulated.
Invention content
The purpose of the present invention is to provide a kind of methods changing quantum dot fluorescence emission spectrum, by quantum dot and nanometer
The aperture of porous gold thin film is compound, and quantum dot is placed on the inside of the aperture of nanoporous gold thin film.
Include the following steps：
(1) preparation of nanoporous gold thin film：Nanoporous gold thin film is prepared with de- alloyage；
(2) CdSe quantum dot and nanoporous gold thin film is compound：By CdSe quantum dot solution and PMMA solution equal proportions
Mixing, is put into ultrasonic pond under the conditions of being protected from light and vibrates 5 minutes；The nanoporous that will be prepared in mixed solution spin coating in step (1)
Gold thin film surface is put into 60 degrees Celsius of baking oven and dry within 10 minutes；PMMA is removed with acetone, places into 60 degrees Celsius of baking
Case carries out drying 3 minutes, removes residual acetone solution, and CdSe quantum dot enters nanoporous with the dissolving of PMMA at this time
Inside the aperture of gold.
In the step (1), nanoporous gold thin film is prepared by the following method to obtain：Choose a concentration of 68% nitre
Acid fishes for film, deionization with glass slide afterwards for 24 hours to the electrum film of 13.25 carats of gold content etching under room temperature
Water surface cleans for 5 times or more and is transferred to silicon chip substrate.
45~55 nanometers of the orifice size of the nanoporous gold thin film.
Fluorescence emission peak by the above-mentioned means, can be modulated by the present invention.
Description of the drawings
Fig. 1 is the electron micrograph that quantum dot is added in nano-porous gold aperture.
Fig. 2 is quantum dot fluorescence tone control cross-reference figure.
Specific implementation mode
Below in conjunction with attached drawing, the present invention is further illustrated with embodiment.
CdSe quantum dot is positioned in nano-porous gold aperture, CdSe quantum are added in nano-porous gold membrane structure
Point manipulates quantum dot fluorescence emission spectrum by changing quantum dot concentration.Specific experiment flow is：
A method of changing quantum dot iridescent, quantum dot and the aperture of nanoporous gold thin film is compound, quantum dot
It is placed on the inside of the aperture of nanoporous gold thin film.
The method of the change quantum dot iridescent of the present invention, includes the following steps：
(1) preparation of nanoporous gold thin film：Nanoporous gold thin film is prepared with de- alloyage；Choose a concentration of 68%
Nitric acid, film is fished for glass slide afterwards for 24 hours to the electrum film of 13.25 carats of gold content etching under room temperature, is gone
Ionized water surface clean 5 times or more is transferred to silicon chip substrate.
(2) CdSe quantum dot and nanoporous gold thin film is compound：By CdSe quantum dot solution and PMMA solution equal proportions
Mixing, is put into ultrasonic pond under the conditions of being protected from light and vibrates 5 minutes；The nanoporous that will be prepared in mixed solution spin coating in step (1)
Gold thin film surface is put into 60 degrees Celsius of baking oven and dry within 10 minutes；PMMA is removed with acetone, places into 60 degrees Celsius of baking
Case carries out drying 3 minutes, removes residual acetone solution, and CdSe quantum dot enters nanoporous with the dissolving of PMMA at this time
Inside the aperture of gold.
45~55 nanometers of the orifice size of heretofore described nanoporous gold thin film.
The present invention can carry out quantum dot fluorescence emission spectrum modulation continuous, real-time, in situ, therefore be shown in quantum dot
Industrial such as quantum dot TV industrial circle is with a wide range of applications.
Embodiment 1
(1) preparation of nanoporous gold thin film.
Nanoporous gold thin film is prepared with de- alloyage, experimental raw is that the electrum of 13.25 carats of gold content is thin
Film.In etching process, choose a concentration of 68% nitric acid, etch fish for film with glass slide afterwards for 24 hours under room temperature, go from
Sub- water surface, which cleans 5 times or more, is transferred to silicon chip substrate.The orifice size of nano-porous gold is about 50 nanometers, such as Fig. 1.
(2) CdSe quantum dot and nano-porous gold is compound.
CdSe quantum dot solution (various concentration) is mixed with PMMA (polymethyl methacrylate) solution equal proportion, is protected from light
Under the conditions of be put into ultrasonic pond and vibrate 5 minutes；The nano-porous gold film surface that mixed solution spin coating is prepared in (1), puts
Enter 60 degrees Celsius of baking oven dry within 10 minutes；PMMA is removed with acetone, 60 degrees Celsius of baking oven is placed into and carries out 3 points of drying
Clock removes residual acetone solution；CdSe quantum dot enters with the dissolving of PMMA inside the aperture of nano-porous gold at this time.
By changing quantum dot concentration, the fluorescence emission spectrum of quantum dot is changed, and iridescent becomes green from cyan
Color, such as Fig. 2.
The foregoing is merely illustrative of the preferred embodiments of the present invention, is not intended to limit the invention, all essences in the present invention
All any modification, equivalent and improvement etc., should all be included in the protection scope of the present invention made by within refreshing and principle.
Claims (3)
1. a kind of method changing quantum dot iridescent, which is characterized in that answer quantum dot and the aperture of nanoporous gold thin film
It closes, quantum dot is placed on the inside of the aperture of nanoporous gold thin film, includes the following steps：
(1) preparation of nanoporous gold thin film：Nanoporous gold thin film is prepared with de- alloyage；
(2) CdSe quantum dot and nanoporous gold thin film is compound：CdSe quantum dot solution is mixed with PMMA solution equal proportions,
It is put into ultrasonic pond and vibrates 5 minutes under the conditions of being protected from light；The nanoporous gold thin film that will be prepared in mixed solution spin coating in step (1)
Surface is put into 60 degrees Celsius of baking oven and dry within 10 minutes；PMMA is removed with acetone, 60 degrees Celsius of baking oven is placed into and carries out
Drying 3 minutes removes residual acetone solution, and CdSe quantum dot enters the small of nano-porous gold with the dissolving of PMMA at this time
Inside hole.
2. the method according to claim 1 for changing quantum dot iridescent, which is characterized in that in the step (1), nanometer
Porous gold thin film is prepared by the following method to obtain：A concentration of 68% nitric acid is chosen, under room temperature to 13.25 grams of gold content
The electrum film etching of drawing fishes for film with glass slide afterwards for 24 hours, and deionized water surface clean is transferred to silicon chip 5 times or more and serves as a contrast
Bottom.
3. the method according to claim 1 or 2 for changing quantum dot iridescent, which is characterized in that the nano-porous gold
45~55 nanometers of the orifice size of film.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201510451563.7A CN106398697B (en) | 2015-07-28 | 2015-07-28 | A method of changing quantum dot iridescent |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201510451563.7A CN106398697B (en) | 2015-07-28 | 2015-07-28 | A method of changing quantum dot iridescent |
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| Publication Number | Publication Date |
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| CN106398697A CN106398697A (en) | 2017-02-15 |
| CN106398697B true CN106398697B (en) | 2018-10-30 |
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| CN111139062B (en) * | 2020-01-07 | 2022-11-22 | 江苏理工学院 | Preparation method of silver-containing nano porous metal loaded chlorine-containing perovskite quantum dot film |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101996777A (en) * | 2010-12-03 | 2011-03-30 | 中国科学院广州能源研究所 | Broad spectrum-absorption quantum dot-sensitized broad-band semiconductor optical anode |
| CN102072895A (en) * | 2010-10-29 | 2011-05-25 | 济南大学 | Electrogenerated chemiluminescence sensor with quantum dot modified nano porous carbon paste electrode for testing trace antibiotic residue |
| CN102201459A (en) * | 2011-03-30 | 2011-09-28 | 山东大学 | Photoelectrode material of nanometer porous metal load semiconductor and preparation method thereof |
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2015
- 2015-07-28 CN CN201510451563.7A patent/CN106398697B/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102072895A (en) * | 2010-10-29 | 2011-05-25 | 济南大学 | Electrogenerated chemiluminescence sensor with quantum dot modified nano porous carbon paste electrode for testing trace antibiotic residue |
| CN101996777A (en) * | 2010-12-03 | 2011-03-30 | 中国科学院广州能源研究所 | Broad spectrum-absorption quantum dot-sensitized broad-band semiconductor optical anode |
| CN102201459A (en) * | 2011-03-30 | 2011-09-28 | 山东大学 | Photoelectrode material of nanometer porous metal load semiconductor and preparation method thereof |
Non-Patent Citations (2)
| Title |
|---|
| Electrochemiluminescence of CdTe quantum dots as labels at nanoporous gold leaf electrodes for ultrasensitive DNA analysis;Xiaofei Hu 等;《Talanta》;20091111;第80卷;1737-1743 * |
| Large Enhancement of Quantum Dot Fluorescence by Highly Scalable Nanoporous Gold;Ling Zhang等;《Adv. Mater.》;20141212;第26卷;1289-1294 * |
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