CN102201459A - Photoelectrode material of nanometer porous metal load semiconductor and preparation method thereof - Google Patents
Photoelectrode material of nanometer porous metal load semiconductor and preparation method thereof Download PDFInfo
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Abstract
The invention relates to a photoelectrode material used in a solar cell and a preparation method thereof, especially relates to a photoelectrode material of a nanometer porous metal load semiconductor and a preparation method thereof, belonging to the photoelectrode chemistry technical field. The photoelectrode material of a nanometer porous metal load semiconductor comprises a nanometer porous metal with a thickness of 50 nanometer to 100 micrometer and a semiconductor layer with a thickness of 1 nanometer to 1 micrometer, wherein after deposition the semiconductor layer uniformly coats the three dimensionally continuous hole wall surface of the nanometer porous metal. Compared with the photoanode material of traditional quantum dot solar cell, nanometer porous metal of the photoelectrode material used in solar cell produced in the invention has a three dimensional porous structure which provides better electrical transmission approach for material.
Description
Technical field
The present invention relates to a kind of optoelectronic pole material that is used for solar cell and preparation method thereof, semi-conductive optoelectronic pole material of particularly a kind of nano porous metal load and preparation method thereof belongs to the Optical Electro-Chemistry technical field.
Background technology
Along with fast development of society, human main energy sources of using such as oil, coal, natural gas etc. are day by day depleted, and this recognizes people to seek the urgency of new regenerative resource.Solar energy has become the focus that people study as a kind of cleaning, safe, the inexhaustible energy, and therefore various solar cells develop rapidly.Traditional photoelectrochemistrpool pool can not satisfy people's needs, and higher light induced electron hole-recombination speed and lower photoelectric conversion efficiency become its maximum obstacle, and this impels people to be devoted to develop solar cell of future generation.Quantum dot sensitized solar cell has caused people's extensive concern as the hot research object of third generation solar cell, and its operation principle is to use the sensitizer of quantum dot as wide band gap semiconducter, produces light induced electron and hole under visible light radiation.Light induced electron is because quantum dot and titanium dioxide can be with the difference of position, transfer to the conduction band of titanium dioxide rapidly by the conduction band of quantum dot, the network transitions that forms via titania nanoparticles arrives conductive materials surfaces such as electro-conductive glass again, conducts to the external circuit generating then.When light induced electron shifted, oxidizing substance can provide electronics to satisfy exciting of light induced electron next time to photohole in the electrolyte, and promptly light induced electron can produce to satisfy the needs of generating endlessly.Quantum dot solar battery possesses lot of advantages, and quantum size effect can make it regulate the sunlight that band gap width absorbs different-waveband.Higher stability makes it more meet effectively lasting standard of solar cell with better light absorption.Quantum dot also has the performance of many excitons excite, promptly absorbs a photon and can produce a plurality of electronics, and the theoretical efficiency of solar cell is improved greatly.
But up to the present, the efficient of quantum dot sensitized solar cell is not high.A key factor that wherein restricts efficient is exactly the conducting problem of electronics in system.After the separation of charge, the light induced electron of transferring to conductor oxidate may reverse and move to compound causing damage in electrolyte and the quantum dot.And electronics must pass the network configuration of semiconductor grain in the process that conducts to the conductive materials surface, the interface that produces between semiconductor grain can make the electronics further loss.Think electronics transmission a good passage is provided is the key of improving quantum dot solar battery.People have done a lot of work for this reason, as utilize the instrument as trapped electrons and transmission electronic such as titania nanotube or material with carbon element such as carbon nano-tube, football alkene, Graphene.
Metal and semiconductor system are the focuses that people study always, and metal has been proved to be the effect of good separation of charge and stored electrons.But because the restriction of metal nanoparticle structure, electronics can't be directly transferred to the external circuit in metal and generate electricity.In recent years, porous metal material more and more is subjected to people's attention, wherein use all (Karl Sieradzki below 1000 nanometers of its pore size of porous metal material take off the alloyage preparation, pore wall thickness, Roger C.Newman " Micro-and Nano-porous Metallic Structures " US Patent, 4,977,038, Dec.11,1990).The nano metal material of this class methods preparation not only has open loose structure, high conductivity, and have cleaning, a highly active surface, can be other active materials of load superior condition is provided, its as catalyst or catalyst carrier at transducer, catalysis, fields such as energy storage are applied.For solving the conducting problem of electronics in optoelectronic pole, we have designed the semiconductor (film or quantum dot) that utilizes nano porous metal to come load can absorb sunlight and have directly collected and conduct light induced electron, wide band gap semiconducter carrier such as titanium dioxide in traditional quantum dot solar battery have been substituted, make light induced electron in transmission course, no longer pass through interface between semiconductor grain, but directly the three-dimensional network by metal conducts to external circuit, and the conductivity that metal is good perfectly is applied in the system.Nano porous metal cleaning and huge surface area can effectively promote separation of charge, good conductivity and distinctive three-dimensional porous continuous structure are can be with the light induced electron of collecting unimpeded and conduct to external circuit rapidly, many and the bad problem of electric conductivity in wide band gap semiconducter median surface can be solved like this, the problem that metal nanoparticle can't conduction electron can be solved again.We the surface of semiconductor deposition at nano porous metal, have prepared the semi-conductive smooth anode material of nano porous metal load with chemical deposition or electrochemical deposition method, have detected its performance in photoelectrochemistrpool pool.The complex light anode material of this novelty has great application prospect in real solar cell.
By retrieval, this nano porous metal (gold, titanium, silver, copper, platinum, nickel, aluminium, manganese, cobalt, iron and their the alloy) load that can be used for solar cell can absorb semiconductor (cadmium sulfide, cadmium selenide, the cadmium telluride of sunlight, zinc sulphide, vulcanized lead) catalyst does not appear in the newspapers.
Summary of the invention
The present invention is directed to the deficiencies in the prior art, semi-conductive optoelectronic pole material of a kind of nano porous metal load and preparation method thereof is provided, this preparation method can regulate semiconductor (film or quantum dot) size by the control sedimentary condition.
The semi-conductive optoelectronic pole material of a kind of nano porous metal load, it is characterized in that, comprise that thickness is that the nano porous metal of 50 nanometers-100 micron and thickness are the semiconductor layer of 1 nanometer-1 micron, evenly covers the three-dimensional continuous hole wall surface of nano porous metal after the described semiconductor layer deposition.
The aperture 2-500nm of nano porous metal.
Described nano porous metal is that nano-porous gold, nanoporous titanium, nano-porous silver, nano porous copper, nanoporous platinum, nanoporous nickel, nanoporous aluminium, nanoporous manganese, nanoporous cobalt, nanoporous iron or above-mentioned metal are with any nanoporous alloy than mixing.
The material of described semiconductor layer is cadmium sulfide, cadmium selenide, cadmium telluride, zinc sulphide or vulcanized lead.
The semi-conductive optoelectronic pole preparation methods of above-mentioned nano porous metal load, step is as follows:
(1) by chemical deposition or electrochemical deposition method deposit thickness the semiconductor layer of 1 nanometer-1 micron with the nano porous metal hole wall surface of nano porous metal;
(2) with flushing liquor flushing 1-3 time, promptly.
Chemical deposition in the described step (1), step is as follows:
Nano porous metal was immersed in 0.01-0.5 mol semiconductor anion solutions and the 0.01-0.5 mol semiconductor cationic solution each 4-6 minute successively repeated deposition 1-100 time.
Above-mentioned semiconductor anion solutions is sulphur or tellurium or plasma selenium solution, and the semiconductor cationic solution is cadmium or zinc or lead ion solution.
After above-mentioned nano porous metal immerses semiconductor anion solutions or semiconductor cationic solution at every turn, also need respectively to soak 4-6 minute with deionized water.
Electrochemical deposition method in the described step (1) is nano porous metal to be inserted remove in the plating bath of oxygen, applies 0.1-10 milliampere constant current then, and sedimentation time is 1-2000 second.
The above-mentioned oxygen that removes is to lead to nitrogen 10-40 minute in plating bath.
Above-mentioned plating bath is the dimethyl sulphoxide solution of sulfur-bearing or tellurium or selenium simple substance 0.01-0.5 mol, cadmium or zinc or lead ion 0.05-0.5 mol.
Flushing liquor in the described step (2) is alcohols or deionized water.
Beneficial effect:
(1) the optoelectronic pole material that is used for solar cell that the present invention makes is compared with traditional quantum dot solar battery photoanode material, and the three-dimensional porous structure that nano porous metal has can provide better electric transmission approach for material.In traditional quantum dot solar battery, use wide band gap semiconducter substrate such as titanium dioxide, the electronics loss that transmission can strengthen light induced electron in the network that semiconductor grain is formed, and the lower conductivity of semiconductor has also limited the transmission of light induced electron to a certain extent; And the three-dimensional continuous structure of nano porous metal of the present invention provides passage for the transmission of electronics, makes electronics need not to pass the direct conduction electron in interface between semiconductor to external circuit.
(2) preparation method of the present invention is by chemical deposition and the semi-conductive size of the equal may command of electrochemical deposition method.Wherein chemical deposition is simple, need not making alive and both can finish deposition process, the method of galvanostatic deposition can accurately be controlled the size of semi-conductive quantum dot or film, promptly adjusts the light that the semiconductor band gap absorbs different-waveband in the sunlight, thus the catalytic activity of control anode material; Photoelectrochemical behaviour by two kinds of equal may command materials of method.
(3) preparation method of the present invention in the hole wall that is deposited on nano porous metal that can semiconductor is even, forms the nucleocapsid structure of nano porous metal nuclear semiconductor (quantum dot or the film) shell with very big surface area.
(4) the optoelectronic pole material that is used for solar cell that the present invention makes has shown good performance in photoelectrochemistrpool pool, and can sustained response, effectively suppressed the photoetch effect of cadmium sulfide, the result indicates that it has greatly potential using value in solar cell.
Description of drawings
Fig. 1 is scanning electron microscopy (SEM) photo of nano-porous gold.
Fig. 2 is scanning electron microscopy (SEM) photo of nano-porous gold electrochemical deposition cadmium sulfide.
Fig. 3 is the optical photograph of nano-porous gold.
Fig. 4 is the optical photograph behind the nano-porous gold electrochemical deposition cadmium sulfide.
Fig. 5 is transmission electron microscope (TEM) photo of nano-porous gold electrochemical deposition cadmium sulfide.
Fig. 6 is high power transmission electron microscope (HRTEM) photo of nano-porous gold electrochemical deposition cadmium sulfide.
Fig. 7 is the electric current-potential curve of the nano-porous gold electrochemical deposition cadmium sulfide electrode of 100 nanometer thickness.
Fig. 8 is the electric current-time graph of the nano-porous gold electrochemical deposition cadmium sulfide electrode of 100 nanometer thickness.
Fig. 9 is the electric current-potential curve of the nano-porous gold electrochemical deposition cadmium sulfide electrode of 400 nanometer thickness.
Figure 10 is electric current-time graph that the nano-porous gold chemical deposition cadmium sulfide of 100 nanometer thickness repeats 30 rear electrodes.
Figure 11 is the electric current-time graph of the nano-porous gold electrochemical deposition cadmium selenide electrode of 100 nanometer thickness.
Figure 12 is the electric current-time graph of the nano-porous silver electrochemical deposition cadmium sulfide electrode of 1 micron thickness.
Figure 13 is the electric current-time graph of the nanoporous platinum electrochemical deposition cadmium selenide electrode of 400 nanometer thickness.
Figure 14 is the electric current-time graph of the nano porous platinum electrochemical deposition cadmium sulfide electrode of 1 micron thickness.
Embodiment:
Below in conjunction with embodiment the present invention is further elaborated, but institute of the present invention protection range is not limited thereto.
Embodiment 1
The optoelectronic pole material of a kind of nano-porous gold load cadmium sulfide (film or quantum dot), comprise that thickness is that the nano-porous gold and the thickness of 100 nanometers is the cadmium sulfide layer of 5-15 nanometer, evenly cover the three-dimensional continuous hole wall surface of nano-porous gold after the described semiconductor layer deposition, make aperture 10-50 nanometer, the semi-conductive optoelectronic pole material of nano-porous gold load of thickness 100 nanometers, 1 centimetre of width, 1 centimetre of length, it is the three-dimensional nano-porous structure of perforate continuously.
The semi-conductive optoelectronic pole preparation methods of above-mentioned nano-porous gold load, step is as follows:
(1) be 100 nanometers with thickness, width is 1 centimetre, and length is that 1 centimetre nano-porous gold places the 0.05 mol cadmium nitrate of deoxygenation and the dimethyl sulphoxide solution of 0.1 mol sulphur;
(2) under 0.0005 ampere constant current, deposit 120 seconds with cadmium sulfide and be deposited on the surface of nano-porous gold, make the semi-conductive optoelectronic pole material of nano-porous gold load cadmium sulfide.
The electron scanning micrograph of the semi-conductive optoelectronic pole material of above-mentioned nano-porous gold load cadmium sulfide is seen Fig. 2, it among the figure nano-porous gold load cadmium sulfide quantum dot sample, photo shows that the surface of nano-porous gold otherwise smooth has plated granular cadmiumsulfide quantum dot, and the granular size of quantum dot is the 5-15 nanometer.Cadmiumsulfide quantum dot is deposited on the nano-porous gold hole wall, because the pore size of nano-porous gold is limited, quantum dot almost fills up it.Fig. 4 is its optical photograph, and the load of material is an electro-conductive glass among the figure.After photo showed nano-porous gold load cadmiumsulfide quantum dot, material still kept good light transmittance, and illustrative material is fit to be applied in the photovoltaic apparatus.Fig. 5 is its transmission electron microscope photo, can observe in nanoporous gold surface uniform deposition cadmium sulfide.
Fig. 1 is the electron scanning micrograph of the nano-porous gold of 100 nanometer thickness.Photo shows that nano-porous gold has three-dimensional open-celled structure, and aperture size and pore wall thickness are more even, and the aperture is the 10-30 nanometer.Fig. 3 is its optical photograph, and load is an electro-conductive glass.Photo shows that the SDU printed words in the substrate can see through nano-porous gold and be observed clearly, illustrates that nano-porous gold has light transmission preferably, can make it effectively absorb sunlight behind the load semiconductor.
Embodiment 2
The semi-conductive optoelectronic pole preparation methods of nano-porous gold load cadmium sulfide, step is as follows:
(1) be 100 nanometers with thickness, width is 1 centimetre, and length is that 1 centimetre nano-porous gold places the 0.05 mol cadmium nitrate of deoxygenation and the dimethyl sulphoxide solution of 0.1 mol sulphur;
(2) under 0.0005 ampere constant current, deposit 50 seconds with cadmium sulfide and be deposited on the surface of nano-porous gold, make the semi-conductive optoelectronic pole material of nano-porous gold load cadmium sulfide.
The semi-conductive optoelectronic pole material of above-mentioned nano-porous gold load cadmium sulfide, comprise that thickness is the nano-porous gold of 100 nanometers and the CdS semiconduct layer that thickness is the 2-7 nanometer, evenly cover the three-dimensional continuous hole wall surface of nano-porous gold after the described semiconductor layer deposition, make aperture 10-50 nanometer, the semi-conductive optoelectronic pole material of nano-porous gold load cadmium sulfide of thickness 100 nanometers, 1 centimetre of width, 1 centimetre of length, it is the three-dimensional nano-porous structure of perforate continuously.As shown in Figure 6, the thickness of the semi-conductive optoelectronic pole material of this nano-porous gold load cadmium sulfide is the 1-4 nanometer.
The semi-conductive optoelectronic pole preparation methods of nano-porous gold load cadmium sulfide, step is as follows:
(1) be 100 nanometers with thickness, width is 1 centimetre, and length is that 1 centimetre nano-porous gold places the 0.05 mol cadmium nitrate of deoxygenation and the dimethyl sulphoxide solution of 0.1 mol sulphur;
(2) under 0.0005 ampere constant current, deposition 110s is deposited on the surface of nano-porous gold with cadmium sulfide, makes the semi-conductive optoelectronic pole material of nano-porous gold load cadmium sulfide.
The semi-conductive optoelectronic pole material of above-mentioned nano-porous gold load cadmium sulfide, comprise that thickness is the nano-porous gold of 100 nanometers and the CdS semiconduct layer that thickness is the 5-13 nanometer, evenly cover the three-dimensional continuous hole wall surface of nano-porous gold after the described semiconductor layer deposition, make aperture 10-50 nanometer, the semi-conductive optoelectronic pole material of nano-porous gold load cadmium sulfide of thickness 100 nanometers, 1 centimetre of width, 1 centimetre of length, it is the three-dimensional nano-porous structure of perforate continuously.
The semi-conductive optoelectronic pole material of above-mentioned nano-porous gold load cadmium sulfide is put into homemade electrolytic cell, is platinum electrode to electrode, and reference electrode is that saturated calomel electrode is carried out the Optical Electro-Chemistry detection to sample.Testing result shows, is under 200 milliwatts/square centimeter illuminate condition in intensity of illumination, and the photoelectric current of the semi-conductive optoelectronic pole material production of above-mentioned nano-porous gold load cadmium sulfide can reach 5.2 milliamperes/square centimeter, as shown in Figure 7.
The semi-conductive optoelectronic pole material of above-mentioned nano-porous gold load cadmium sulfide is put into homemade electrolytic cell, and nano-porous gold load cadmium sulfide sample is the light anode, and platinum electrode is a negative electrode, sample is carried out Optical Electro-Chemistry detect.Testing result shows, is under the condition of 200 milliwatt/square centimeters, the conversion of batch (-type) switch lamp in intensity of illumination, but the photoelectric current held stationary, and the photoelectricity flow valuve is about 0.6 milliampere/square centimeter, as shown in Figure 8.
The semi-conductive optoelectronic pole preparation methods of nano-porous gold load cadmium sulfide, step is as follows:
(1) be 400 nanometers with thickness, width is 1 centimetre, and length is that 1 centimetre nano-porous gold places the 0.05 mol cadmium nitrate of deoxygenation and the dimethyl sulphoxide solution of 0.1 mol sulphur;
(2) under 0.001 ampere constant current, deposit 100 seconds with cadmium sulfide and be deposited on the surface of nano-porous gold, make the semi-conductive optoelectronic pole material of nano-porous gold load cadmium sulfide.
The semi-conductive optoelectronic pole material of above-mentioned nano porous metal load, comprise that thickness is the nano-porous gold of 400 nanometers and the CdS semiconduct layer that thickness is the 3-10 nanometer, evenly cover the three-dimensional continuous hole wall surface of nano-porous gold after the described semiconductor layer deposition, make aperture 10-50 nanometer, the semi-conductive optoelectronic pole material of nano-porous gold load cadmium sulfide of thickness 400 nanometers, 1 centimetre of width, 1 centimetre of length, its structure are the three-dimensional nano-porous structure of perforate continuously.
The semi-conductive optoelectronic pole material of above-mentioned nano-porous gold load cadmium sulfide is put into homemade electrolytic cell, is platinum electrode to electrode, and reference electrode is that saturated calomel electrode is carried out the Optical Electro-Chemistry detection to sample.Testing result shows, is under 200 milliwatts/square centimeter illuminate condition in intensity of illumination, and the photoelectric current of the semi-conductive optoelectronic pole material production of above-mentioned nano porous metal load can reach 1.7 milliamperes/square centimeter, as shown in Figure 9.
Embodiment 5
The semi-conductive optoelectronic pole preparation methods of nano-porous gold load cadmium sulfide, step is as follows:
(1) be 100 nanometers with thickness, width is 1 centimetre, and length is that 1 centimetre nano-porous gold immerses 0.5 mol sulphion solution successively, deionized water, 0.5 mol cadmium-ion solution, deionized water each 5 minutes;
(2) nano-porous gold in the step (1) is repeated above operation 1-100 time, make the semi-conductive optoelectronic pole material of nano-porous gold load cadmium sulfide.
The semi-conductive optoelectronic pole material of above-mentioned nano-porous gold load cadmium sulfide, comprise that thickness is the nano-porous gold of 100 nanometers and the CdS semiconduct layer that thickness is the 1-15 nanometer, evenly cover the three-dimensional continuous hole wall surface of nano-porous gold after the described semiconductor layer deposition, make aperture 10-50 nanometer, the semi-conductive optoelectronic pole material of nano-porous gold load of thickness 100 nanometers, 1 centimetre of width, 1 centimetre of length, it is the three-dimensional nano-porous structure of perforate continuously.
The semi-conductive optoelectronic pole material of nano-porous gold load cadmium sulfide is put into homemade electrolytic cell, is platinum electrode to electrode, and reference electrode is that saturated calomel electrode is carried out the Optical Electro-Chemistry detection to sample.Testing result shows, is under 200 milliwatts/square centimeter illuminate condition in intensity of illumination, and the photoelectric current of the semi-conductive optoelectronic pole material production of above-mentioned nano porous metal load can reach 0.23 milliampere/square centimeter, as shown in figure 10.
Embodiment 6
The optoelectronic pole preparation methods of nano-porous gold load cadmium selenide, step is as follows:
(1) be 100 nanometers with thickness, width is 1 centimetre, and length is that 1 centimetre nano-porous gold places the 0.05 mol cadmium nitrate of deoxygenation and the dimethyl sulphoxide solution of 0.1 mol selenium;
(2) under 0.001 ampere constant current, deposit 60 seconds with cadmium selenide and be deposited on the surface of nanoporous platinum, make the optoelectronic pole material of nano-porous gold load cadmium selenide.
The optoelectronic pole material of above-mentioned nano-porous gold load cadmium selenide, comprise that thickness is the nano-porous gold of 100 nanometers and the cadmium selenide semiconductor layer that thickness is the 5-15 nanometer, evenly cover the three-dimensional continuous hole wall surface of nanoporous platinum after the described cadmium selenide semiconductor layer deposition, make aperture 10-50 nanometer, the semi-conductive optoelectronic pole material of nano-porous gold load cadmium selenide of thickness 100 nanometers, 1 centimetre of width, 1 centimetre of length, it is the three-dimensional nano-porous structure of perforate continuously.
The semi-conductive optoelectronic pole material of nano-porous gold load cadmium selenide is put into homemade electrolytic cell, is that platinum electrode carries out the Optical Electro-Chemistry detection to sample to electrode.Testing result shows, is under 200 milliwatts/square centimeter illuminate condition in intensity of illumination, and the photoelectric current of the semi-conductive optoelectronic pole material production of above-mentioned nano porous metal load can reach 0.6 milliampere/square centimeter, as shown in figure 11.
Embodiment 7
The optoelectronic pole preparation methods of nano-porous silver load cadmium sulfide, step is as follows:
(1) be 1 micron with thickness, width is 1 centimetre, and length is that 1 centimetre nano-porous silver places the 0.05 mol cadmium nitrate of deoxygenation and the dimethyl sulphoxide solution of 0.1 mol sulphur;
(2) under 0.005 ampere constant current, deposit 120 seconds with cadmium sulfide and be deposited on the surface of nano-porous silver, make the optoelectronic pole material of nano-porous silver load cadmium sulfide.
The optoelectronic pole material of above-mentioned nano-porous silver load cadmium sulfide, comprise that thickness is the CdS semiconduct layer that 1 micron nano-porous silver and thickness are the 5-15 nanometer, evenly cover the three-dimensional continuous hole wall surface of nano-porous silver after the described CdS semiconduct layer deposition, make aperture 30-100 nanometer, the semi-conductive optoelectronic pole material of nano-porous silver load cadmium sulfide of 1 micron of thickness, 1 centimetre of width, 1 centimetre of length, it is the three-dimensional nano-porous structure of perforate continuously.
The semi-conductive optoelectronic pole material of nano-porous silver load cadmium sulfide is put into homemade electrolytic cell, is platinum electrode to electrode, and reference electrode is that saturated calomel electrode is carried out the Optical Electro-Chemistry detection to sample.Testing result shows, is under 200 milliwatts/square centimeter illuminate condition in intensity of illumination, and the photoelectric current of the semi-conductive optoelectronic pole material production of above-mentioned nano-porous silver load cadmium sulfide can reach 0.82 milliampere/square centimeter, as shown in figure 12.
Embodiment 8
The optoelectronic pole preparation methods of nanoporous platinum load cadmium selenide, step is as follows:
(1) be 400 nanometers with thickness, width is 1 centimetre, and length is that 1 centimetre nanoporous platinum places the 0.05 mol cadmium nitrate of deoxygenation and the dimethyl sulphoxide solution of 0.1 mol selenium;
(2) under 0.001 ampere constant current, deposit 120 seconds with cadmium selenide and be deposited on the surface of nanoporous platinum, make the optoelectronic pole material of nanoporous platinum load cadmium selenide.
The optoelectronic pole material of above-mentioned nanoporous platinum load cadmium selenide, comprise that thickness is the nanoporous platinum of 400 nanometers and the cadmium selenide semiconductor layer that thickness is the 5-15 nanometer, evenly cover the three-dimensional continuous hole wall surface of nanoporous platinum after the described cadmium selenide semiconductor layer deposition, make aperture 10-50 nanometer, the semi-conductive optoelectronic pole material of nanoporous platinum load cadmium selenide of thickness 400 nanometers, 1 centimetre of width, 1 centimetre of length, it is the three-dimensional nano-porous structure of perforate continuously.
The semi-conductive optoelectronic pole material of nanoporous platinum load cadmium selenide is put into homemade electrolytic cell, is platinum electrode to electrode, and reference electrode is that saturated calomel electrode is carried out the Optical Electro-Chemistry detection to sample.Testing result shows, is under 200 milliwatts/square centimeter illuminate condition in intensity of illumination, and the photoelectric current of the semi-conductive optoelectronic pole material production of above-mentioned nano porous metal load can reach 1.40 milliamperes/square centimeter, as shown in figure 13.
Embodiment 9
The optoelectronic pole preparation methods of nano porous platinum load cadmium sulfide, step is as follows:
(1) be 1 micron with thickness, width is 1 centimetre, and length is that 1 centimetre nano porous platinum places the 0.05 mol cadmium nitrate of deoxygenation and the dimethyl sulphoxide solution of 0.1 mol sulphur;
(2) under 0.005 ampere constant current, sedimentation time is cadmium sulfide to be deposited on the surface of nano-porous gold in 60 seconds, makes the optoelectronic pole material of nano porous platinum load cadmium sulfide.
The semi-conductive optoelectronic pole material of above-mentioned nano porous metal load, comprise that thickness is the CdS semiconduct layer that 1 micron nano porous platinum and thickness are the 3-8 nanometer, evenly cover the three-dimensional continuous hole wall surface of nanoporous alloy after the described CdS semiconduct layer deposition, make aperture 10-100 nanometer, the optoelectronic pole material of the nano porous platinum load cadmium sulfide of 1 micron of thickness, 1 centimetre of width, 1 centimetre of length, it is the three-dimensional nano-porous structure of perforate continuously.
The semi-conductive optoelectronic pole material of nano porous platinum load is put into homemade electrolytic cell, is platinum electrode to electrode, and reference electrode is that saturated calomel electrode is carried out the Optical Electro-Chemistry detection to sample.Testing result shows, is under 200 milliwatts/square centimeter illuminate condition in intensity of illumination, and the photoelectric current of the semi-conductive optoelectronic pole material production of above-mentioned nano porous metal load can reach 0.23 milliampere/square centimeter, as shown in figure 14.
Claims (10)
1. semi-conductive optoelectronic pole material of nano porous metal load, it is characterized in that, comprise that thickness is that the nano porous metal of 50 nanometers-100 micron and thickness are the semiconductor layer of 1 nanometer-1 micron, evenly covers the three-dimensional continuous hole wall surface of nano porous metal after the described semiconductor layer deposition.
2. photovoltaic electrodes material as claimed in claim 1 is characterized in that, the aperture of nano porous metal is 2-500nm.
3. photovoltaic electrodes material as claimed in claim 1, it is characterized in that described nano porous metal is that nano-porous gold, nanoporous titanium, nano-porous silver, nano porous copper, nanoporous platinum, nanoporous nickel, nanoporous aluminium, nanoporous manganese, nanoporous cobalt, nanoporous iron or above-mentioned metal are with any nanoporous alloy than mixing.
4. photovoltaic electrodes material as claimed in claim 1 is characterized in that, the material of described semiconductor layer is that the material of semiconductor layer is cadmium sulfide, cadmium selenide, cadmium telluride, zinc sulphide or vulcanized lead.
5. the semi-conductive optoelectronic pole preparation methods of the described nano porous metal load of claim 1 is characterized in that step is as follows:
(1) by chemical deposition or electrochemical deposition method deposit thickness the semiconductor layer of 1 nanometer-1 micron with the nano porous metal hole wall surface of nano porous metal;
(2) with flushing liquor flushing 1-3 time, promptly.
6. preparation method as claimed in claim 5 is characterized in that, the chemical deposition in the described step (1), and step is as follows:
Nano porous metal was immersed in 0.01-0.5 mol semiconductor anion solutions and the 0.01-0.5 mol semiconductor cationic solution each 4-6 minute successively repeated deposition 1-100 time.
7. preparation method as claimed in claim 6 is characterized in that, above-mentioned semiconductor anion solutions is sulphur or tellurium or plasma selenium solution, and the semiconductor cationic solution is cadmium or zinc or lead ion solution;
8. preparation method as claimed in claim 6 is characterized in that, after above-mentioned nano porous metal immerses semiconductor anion solutions or semiconductor cationic solution at every turn, also needs respectively to soak 4-6 minute with deionized water.
9. preparation method as claimed in claim 5 is characterized in that, the electrochemical deposition method in the described step (1) is nano porous metal to be inserted remove in the plating bath of oxygen, applies 0.1-10 milliampere constant current then, and sedimentation time is 1-2000 second.
10. preparation method as claimed in claim 8 is characterized in that, the above-mentioned oxygen that removes is to lead to nitrogen 10-40 minute in plating bath; Above-mentioned plating bath is the dimethyl sulphoxide solution of sulfur-bearing or tellurium or selenium simple substance 0.01-0.5 mol, cadmium or zinc or lead ion 0.05-0.5 mol; Above-mentioned flushing liquor is alcohols or deionized water.
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| CN102605369A (en) * | 2012-01-14 | 2012-07-25 | 天津大学 | Amorphous nano porous titanium dioxide composite material and method thereof for depositing cadmium sulfide |
| CN103255441A (en) * | 2013-05-20 | 2013-08-21 | 北京科技大学 | Method for preparing nano porous silver based on Ag-based amorphous alloy |
| CN104752552A (en) * | 2013-12-27 | 2015-07-01 | 北京化工大学 | Method of preparing copper-indium sulfide semiconductor photovoltaic material loaded by foam metal load |
| CN104787852A (en) * | 2015-03-24 | 2015-07-22 | 南京市环境保护科学研究院 | Preparation method of inertial substrate nanosilver-ferroalloy electrode, obtained electrode and application of electrode |
| CN104826625A (en) * | 2015-04-09 | 2015-08-12 | 上海理工大学 | Double-layer TiO2/Au porous structure catalyst and preparation method thereof |
| CN106073761A (en) * | 2016-05-28 | 2016-11-09 | 惠州市力道电子材料有限公司 | A kind of surface is provided with the matrix of nano-porous silver, its preparation method and application |
| CN106398697A (en) * | 2015-07-28 | 2017-02-15 | 上海师范大学 | Method for changing fluorescence color of quantum dots |
| CN110573238A (en) * | 2016-12-21 | 2019-12-13 | 衣阿华大学研究基金会 | apparatus and method for three-dimensional electrodialysis |
| CN111139062A (en) * | 2020-01-07 | 2020-05-12 | 江苏理工学院 | Preparation method of silver-containing nano porous metal loaded chlorine-containing perovskite quantum dot film |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050121068A1 (en) * | 2002-06-22 | 2005-06-09 | Nanosolar, Inc. | Photovoltaic devices fabricated by growth from porous template |
| US7253017B1 (en) * | 2002-06-22 | 2007-08-07 | Nanosolar, Inc. | Molding technique for fabrication of optoelectronic devices |
| WO2010060154A1 (en) * | 2008-11-27 | 2010-06-03 | Monash University | Photovoltaic devices |
-
2011
- 2011-03-30 CN CN2011100782594A patent/CN102201459B/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050121068A1 (en) * | 2002-06-22 | 2005-06-09 | Nanosolar, Inc. | Photovoltaic devices fabricated by growth from porous template |
| US7253017B1 (en) * | 2002-06-22 | 2007-08-07 | Nanosolar, Inc. | Molding technique for fabrication of optoelectronic devices |
| WO2010060154A1 (en) * | 2008-11-27 | 2010-06-03 | Monash University | Photovoltaic devices |
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| CN102605369A (en) * | 2012-01-14 | 2012-07-25 | 天津大学 | Amorphous nano porous titanium dioxide composite material and method thereof for depositing cadmium sulfide |
| CN103255441A (en) * | 2013-05-20 | 2013-08-21 | 北京科技大学 | Method for preparing nano porous silver based on Ag-based amorphous alloy |
| CN103255441B (en) * | 2013-05-20 | 2015-06-10 | 北京科技大学 | Method for preparing nano porous silver based on Ag-based amorphous alloy |
| CN104752552A (en) * | 2013-12-27 | 2015-07-01 | 北京化工大学 | Method of preparing copper-indium sulfide semiconductor photovoltaic material loaded by foam metal load |
| CN104787852A (en) * | 2015-03-24 | 2015-07-22 | 南京市环境保护科学研究院 | Preparation method of inertial substrate nanosilver-ferroalloy electrode, obtained electrode and application of electrode |
| CN104826625A (en) * | 2015-04-09 | 2015-08-12 | 上海理工大学 | Double-layer TiO2/Au porous structure catalyst and preparation method thereof |
| CN106398697B (en) * | 2015-07-28 | 2018-10-30 | 上海师范大学 | A method of changing quantum dot iridescent |
| CN106398697A (en) * | 2015-07-28 | 2017-02-15 | 上海师范大学 | Method for changing fluorescence color of quantum dots |
| CN106073761A (en) * | 2016-05-28 | 2016-11-09 | 惠州市力道电子材料有限公司 | A kind of surface is provided with the matrix of nano-porous silver, its preparation method and application |
| CN110573238A (en) * | 2016-12-21 | 2019-12-13 | 衣阿华大学研究基金会 | apparatus and method for three-dimensional electrodialysis |
| CN110573238B (en) * | 2016-12-21 | 2023-03-21 | 衣阿华大学研究基金会 | Apparatus and method for three-dimensional electrodialysis |
| CN111139062A (en) * | 2020-01-07 | 2020-05-12 | 江苏理工学院 | Preparation method of silver-containing nano porous metal loaded chlorine-containing perovskite quantum dot film |
| CN111139062B (en) * | 2020-01-07 | 2022-11-22 | 江苏理工学院 | Preparation method of silver-containing nano porous metal loaded chlorine-containing perovskite quantum dot film |
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