CN106393526B - 聚二甲基硅氧烷微流控芯片高纵横比结构制造方法 - Google Patents

聚二甲基硅氧烷微流控芯片高纵横比结构制造方法 Download PDF

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CN106393526B
CN106393526B CN201610900050.4A CN201610900050A CN106393526B CN 106393526 B CN106393526 B CN 106393526B CN 201610900050 A CN201610900050 A CN 201610900050A CN 106393526 B CN106393526 B CN 106393526B
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王少熙
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    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
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    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C39/00—Shaping by casting, i.e. introducing the moulding material into a mould or between confining surfaces without significant moulding pressure; Apparatus therefor
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Abstract

本发明公开了一种聚二甲基硅氧烷微流控芯片高纵横比结构制造方法，用于解决现有微流控芯片制造方法制造的微流控芯片中微型柱状结构纵横比小的技术问题。技术方案是利用反相模板制造光刻胶SU8模具，然后在此基础上使用PDMS试剂浇铸PDMS芯片。得到的PDMS芯片继续作为模具使用。与此同时配备表面活性剂Brij@52试剂，按照1:1:8比例配备并溶解后涂覆到PDMS芯片表面，并在这个PDMS芯片表面上浇铸PDMS试剂，经过固化后剥离，最后得到PDMS芯片。本发明采用二步法完成PDMS芯片制造，不需要额外增加其他设备，整个制造过程成本低，步骤简单，最终实现纵横比达到25的微米级柱状结构。

Description

聚二甲基硅氧烷微流控芯片高纵横比结构制造方法
技术领域
本发明涉及一种微流控芯片制造方法，特别涉及一种聚二甲基硅氧烷微流控芯片高纵横比结构制造方法。
背景技术
实现高纵横比结构是制造复杂微纳流控芯片的关键技术。聚二甲基硅氧烷(polydimethylsiloxane:PDMS)是实现微纳流控芯片的重要物质，然后由于PDMS是柔性材料，因此使用PDMS材料制造高体积面积比结构存在困难，限制了复杂芯片结构的实现。
文献“Rapid replication of master structures by double casting withPDMS,Lab on a Chip,9(20),3000-3002(2009)。”公开了一种双步骤PDMS芯片复杂结构制造方法。该方法使用羟丙基甲基纤维素作为芯片涂覆剂，用来实现PDMS芯片作为模具制造另外一个PDMS芯片的方法。完成后的柱状结构宽为40μm～50μm，高为20μm，得出的宽高比不到1。微流控芯片内部结构由腔体或者通道组成，对于细胞或者颗粒捕获结构需要纵横比大的柱状结构形成，小于1的纵横比微型柱状结构限制了复杂芯片实现。
综上所述，实现大的纵横比柱状结构是复杂微纳流控芯片应用的关键。
发明内容
为了克服现有微流控芯片制造方法制造的微流控芯片中微型柱状结构纵横比小的不足，本发明提供一种聚二甲基硅氧烷微流控芯片高纵横比结构制造方法。该方法利用反相模板制造光刻胶SU8模具，然后在此基础上使用PDMS试剂浇铸PDMS芯片。得到的PDMS芯片继续作为模具使用。与此同时配备表面活性剂Brij@52试剂，按照1:1:8比例配备并溶解后涂覆到PDMS芯片表面，并在这个PDMS芯片表面上浇铸PDMS试剂，经过固化后剥离，最后得到PDMS芯片。本发明采用二步法完成PDMS芯片制造，不需要额外增加其他设备，只是在背景技术流程基础上增加一步；同时表面活性剂Brji@52试剂价格低廉，且能完成PDMS芯片之间的剥离。整个制造过程成本低，步骤简单，最终实现纵横比达到25的微米级柱状结构。
本发明解决其技术问题所采用的技术方案：一种聚二甲基硅氧烷微流控芯片高纵横比结构制造方法，其特点是包括以下步骤：
步骤一、设计微流控芯片的反相光刻掩模板。
步骤二、在硅片上涂覆光刻胶SU8试剂，涂覆完后进行表面匀胶。
步骤三、硅片表面光刻胶SU8试剂均匀后进行烘胶，然后利用步骤一的反相光刻掩模板刻蚀，得到反相光刻胶SU8模具。
步骤四、按照10:1的比例配备PDMS试剂，在光刻胶SU8模具上完成浇铸、烘胶并剥离切割，得到反相PDMS芯片模具。
步骤五、按照表面活性剂Brij@52:丙酮:去离子水＝1:1:8的比例配备混合溶液。等到表面活性剂Brij@52完全溶解后浸入PDMS反相模具，置于混合溶液中半个小时，然后取出PDMS反相模具用去离子水冲洗并常温吹开。
步骤六、在PDMS反相模具上进行浇铸PDMS试剂，在90摄氏度烘胶一个半小时，剥离PDMS芯片并进行切割修剪，得到聚二甲基硅氧烷微流控芯片。
本发明的有益效果是：该方法利用反相模板制造光刻胶SU8模具，然后在此基础上使用PDMS试剂浇铸PDMS芯片。得到的PDMS芯片继续作为模具使用。与此同时配备表面活性剂Brij@52试剂，按照1:1:8比例配备并溶解后涂覆到PDMS芯片表面，并在这个PDMS芯片表面上浇铸PDMS试剂，经过固化后剥离，最后得到PDMS芯片。本发明采用二步法完成PDMS芯片制造，不需要额外增加其他设备，只是在背景技术流程基础上增加一步；同时表面活性剂Brji@52试剂价格低廉，且能完成PDMS芯片之间的剥离。整个制造过程成本低，步骤简单，最终实现纵横比达到25的微米级柱状结构。
下面结合附图和具体实施方式对本发明作详细说明。
附图说明
图1是本发明聚二甲基硅氧烷微流控芯片高纵横比结构制造方法的流程图。
具体实施方式
参照图1。本发明聚二甲基硅氧烷微流控芯片高纵横比结构制造方法具体步骤如下：
①首先根据应用需求的芯片功能设计反相光刻掩模板。
②在硅片上涂覆光刻胶SU8试剂，光刻胶SU8试剂类型参考芯片三维结构高度信息并查阅光刻胶SU8试剂说明书决定。涂覆完后并进行表面匀胶。
③硅片表面光刻胶SU8试剂均匀后进行烘胶，然后利用第一步的反相光刻掩模板刻蚀，得到反相光刻胶SU8模具。
④配备PDMS试剂(常规是10:1)，在光刻胶SU8模具上完成浇铸、烘胶并剥离切割，得到反相PDMS芯片模具。
⑤按照表面活性剂Brij@52:丙酮:去离子水＝1:1:8的比例配备混合溶液。等到表面活性剂Brij@52完全溶解后浸入PDMS反相模具，置于混合溶液中半个小时，然后取出PDMS反相模具用去离子水冲洗并常温吹开。
⑥在PDMS反相模具上进行浇铸PDMS试剂，在90摄氏度烘胶一个半小时，剥离PDMS芯片并进行切割等修剪，得到聚二甲基硅氧烷微流控芯片。

Claims (1)

1.一种聚二甲基硅氧烷微流控芯片高纵横比结构制造方法，其特征在于包括以下步骤：
步骤一、设计微流控芯片的反相光刻掩模板；
步骤二、在硅片上涂覆光刻胶SU8试剂，涂覆完后进行表面匀胶；
步骤三、硅片表面光刻胶SU8试剂均匀后进行烘胶，然后利用步骤一的反相光刻掩模板刻蚀，得到反相光刻胶SU8模具；
步骤四、按照10:1的比例配备PDMS试剂，在光刻胶SU8模具上完成浇铸、烘胶并剥离切割，得到反相PDMS芯片模具；
步骤五、按照表面活性剂Brij@52:丙酮:去离子水＝1:1:8的比例配备混合溶液，等到表面活性剂Brij@52完全溶解后浸入PDMS反相模具，置于混合溶液中半个小时，然后取出PDMS反相模具用去离子水冲洗并常温吹干 ；
步骤六、在PDMS反相模具上进行浇铸PDMS试剂，在90摄氏度烘胶一个半小时，剥离PDMS芯片并进行切割修剪，得到聚二甲基硅氧烷微流控芯片；最终实现纵横比达到25的微米级柱状结构。
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CN108181789A (zh) * 2017-12-27 2018-06-19 北京百奥芯科技有限公司 一种针对pdms芯片转印的光刻胶模板加工方法
CN108187767B (zh) * 2017-12-30 2020-02-21 北京化工大学 一种可编程模块化的pdms微流控芯片模具系统
CN109795062B (zh) * 2018-12-20 2020-03-17 西安交通大学 一种掩膜加工仿鲨鱼皮表面的制备方法
CN110076938B (zh) * 2019-04-26 2020-04-14 清华大学 柔性成型体及其制备方法和应用
CN110993577B (zh) * 2019-12-24 2022-02-15 上海交通大学 一种pdms微通道热沉、pdms模具、硅模具及其制备方法

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