CN106392233B - A kind of nano-weld method of Electronic Speculum In Situ Heating device combination solder - Google Patents
A kind of nano-weld method of Electronic Speculum In Situ Heating device combination solder Download PDFInfo
- Publication number
- CN106392233B CN106392233B CN201611107702.5A CN201611107702A CN106392233B CN 106392233 B CN106392233 B CN 106392233B CN 201611107702 A CN201611107702 A CN 201611107702A CN 106392233 B CN106392233 B CN 106392233B
- Authority
- CN
- China
- Prior art keywords
- solder
- nano
- welding
- heating device
- fertile material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K1/00—Soldering, e.g. brazing, or unsoldering
- B23K1/005—Soldering by means of radiant energy
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Electric Connection Of Electric Components To Printed Circuits (AREA)
Abstract
The invention discloses a kind of nano-weld methods of Electronic Speculum In Situ Heating device combination solder.Welding process of the present invention carries out in SEM FIB, welding position is heated using positioned at scanning electron microscope chamber indoor In Situ Heating device, simultaneously by ion beam cleaning welding region, remove impurity (such as solder surface oxide on nano material surface layer, carbons compound, organic matter etc.), only solder is made to become molten condition, and it is not damaged to fertile material, pass through held for some time, lasting and strong diffusion, the final purpose for realizing welding nano-pattern occur for fusion welding and the fertile material equally heated.The present invention accurately controls heating temperature, only melts the solder of low melting point, and not damaged to fertile material, has significant advantage for welding dystectic oxide semiconductor nano material.The welding method can observe entire welding process in real time, and controllability is extremely strong and convenient and efficient, and the welding of many places nano-pattern can be achieved at the same time, efficient.
Description
Technical field
It is a kind of to utilize scanning electron microscope home position heating device combination solder the invention belongs to micro Nano material manufacture field
Nano-weld method can be widely used for the nano material that welding fusing point is higher than solder.
Background technology
With the development of nanosecond science and technology, it is functional nano device by the nanomaterial assembly prepared, depends on micro-nano
The development of scale processing technology, and the welding method of nano material is problem urgently to be resolved hurrily in micro-nano technology.Currently, relying on
The nano-weld technology of solder is sacrificed since fertile material damage is small, pollution-free, it is wide in high precision, quickly succinctly to have obtained to welding
General development and utilization.One of which welding technique is first to be in close contact two nano-probes and solder both ends to form conductive lead to
Road achievees the purpose that welding by applying certain voltage and melting solder, and this method can observe entire weldering in real time, in situ
Termination process.Another is then to irradiate welding region by high-precision laser beam, so that solder thawing is wrapped for spherical shape to be welded
The region connect, to realize weld task (CN201610158068.1).But solder is set to melt by voltage, laser beam irradiation etc.
The means of change lack accuracy, and the too small complete thawing that can not achieve solder of experiment parameter is excessive, it is possible that damage welding section
The nano unit in domain, welding process need centainly empirical, and controllability is poor.
Invention content
The shortcomings that the purpose of the present invention is being directed to prior art means and deficiency, it is proposed that a kind of scanning electron microscope home position heating
The welding method of device combination solder, welding process carry out in SEM-FIB, and may be implemented to accurately control heating temperature only makes
Solder melts welds fertile material without damaging.The technical solution adopted in the present invention is as follows：It is located at by accurately controlling
In Situ Heating device inside scanning electron microscope makes the solder positioned at welding position melt by the way that specific temperature is arranged only, and right
Fusing point is higher than the fertile material of solder without influence, and heat preservation a period of time, solder becomes molten condition and sent out with welding fertile material
Raw strong diffusion, firm firm pad is formed with fertile material, to which independent fertile material is passed through solder
Weld together.The heating region area of the Electronic Speculum In Situ Heating device is 30cm2, in the scanning circumstance of high vacuum, heat
Amount passes to solder by two kinds of forms：First, conduction of heat passes heat that is, by the silicon chip being in close contact with heating plate
It send to solder；Second is that heat radiation acts on, heat is sent to solder by the form of electromagnetic wave in vacuum.In vacuum environment, lead to
The above heat transfer process is crossed, being transmitted to solder to even heat makes it melt completely.The fusing point of the solder is female less than being soldered
The fusing point of body material, preferably less than 200 DEG C of fertile material fusing point can only to make to be located at welding position during heating
Solder melt, and on fusing point higher than solder fertile material without influence.The soldered fertile material can be metal, nonmetallic
Material is especially suitable for having dystectic oxide semiconductor material to its electric conductivity no requirement (NR).The soldered parent is received
Rice material morphology can be with diversification, such as zero dimension particle, one-dimensional nano line, nanometer rods, two-dimensional nano piece, nanobelt, film.Institute
Solder in stating is brazing metal, can be Single Phase Metal solder, duplex alloy solder, triple-phase alloys solder and other heterogeneous alloys
Solder.The welding process carries out on silicon chip.It is accurately to be conveyed solder using the probe of nano-controller in described
To position to be welded.Before the welding starts, need, using the ion beam cleaning position to be welded in SEM-FIB Electronic Speculum, to remove
The impurity of welding region surface, including oxide layer, carbons compound and organic matter, ensure follow-up high-quality welding.It is swept in described
It is best to retouch a little higher than 30 DEG C of the solder of temperature setting requirement of Electronic Speculum In Situ Heating device, the soaking time after being raised to set temperature
1-5min is advisable.The wetability angle of solder used in the middle requirement and nanometer fertile material is less than 90 °.
The present invention has advantage following prominent：(1) can be accurately controlled using scanning electron microscope home position heating device makes solder melt
The temperature of change, by setting soaking time, with nanometer fertile material to be welded lasting and strong expansion occurs for the solder of melting
Effect is dissipated, firm firm pad is formed；(2) temperature set by only makes solder melt completely, and higher to what is be soldered
The fertile material of fusing point is not damaged, including pattern, crystal structure and performance；(3) in welding process, fertile material is also heated to
The temperature for making solder melt, but be unlikely to damage fertile material, therefore the diffusion between solder and fertile material is compared to it
His method is stronger strong, and the time in addition spread can cause the pad being ultimately formed also more firm taking human as being accurately controlled
It leans on；(4) since the fusing point of solder is generally less than other kinds of nano material, therefore this method is applicable to the nano material of welding
Huge number；(5) under micro-nano-scale, the welding of dystectic oxide semiconductor nano material is very difficult, is led to
The solder that selection is less than 90 ° with fertile material angle of wetting is crossed, such nano material high quality, which may be implemented, using this technology welds
It connects, for example the tungsten trioxide nano material with luminescence generated by light, electroluminescent and gas-sensitive property.
Description of the drawings
Fig. 1 be welding method of the present invention principle schematic, by SEM-FIB Electronic Speculum original position heating device it is straight
Heat effect is connect, so that the solder of welding position is melted completely and achievees the purpose that welding；Wherein (a) is principle schematic；(b) it is office
Portion's enlarged drawing；
Fig. 2 is so that nanotube-solder is melted into spherical shape using Electronic Speculum In Situ Heating device coupled ion Shu Qingxi in embodiment
Scanning electron microscope diagram；
Fig. 3 is the scanning electron microscopy expressed in embodiment after nanotube-solder melts to being soldered fertile material wetability
Mirror figure；
Fig. 4 is to be welded on two independent tungsten trioxide nanowires using one-dimensional gun-metal nanotube-solder in embodiment
Scanning electron microscope diagram together.
Specific implementation mode
Present embodiment case combines the welding of one-dimensional gun-metal nanotube-solder based on scanning electron microscope home position heating device
Method welds a kind of important refractory oxide semiconductor nano material tungstic acid, but the scope of protection of the invention is unlimited
In following cases.
As shown in Figure 1, directly heating silicon chip using Electronic Speculum In Situ Heating device, keep the nanotube-solder in welding region complete
Melt, makes solder and fertile material that lasting and strong diffusion occur by held for some time, to pass through medium-
Solder welds together fertile material.The welding process carries out in SEM-FIB, and welding region is the micro-nano in silicon chip
Metrical scale space, silicon chip are in close contact preferably to carry out hot transmission with the heating plate in In Situ Heating device.It is needed before welding
With ion beam cleaning welding region, removal is located at the impurity on nano material surface layer, including the oxide layer of solder surface and parent material
Expect carbons compound, the organic matter etc. on surface layer, it is ensured that effective progress of diffusion is to obtain the solder joint of high quality.It is selected in welding
Solder must be good with the wetability of fertile material.Temperature control by control positioned at scanning electron microscope exterior thereto fills
It sets, heating device is made to reach set temperature, the fusing point of solder used during this temperature will be welded slightly higher than, generally with 30 DEG C
It is preferred, it is ensured that the complete thawing of solder；Less than 200 DEG C of fertile material fusing point, it is ensured that fusing point higher than solder fertile material without
It influences.In vacuum chamber, the heat of heating plate is transmitted to solder by two ways in In Situ Heating device, when by with
Close contact silicon chip conduct heat, second is that heat is sent to solder by the form of heat radiation.Pass through sufficient heat transfer
Effect, heating device can accurately control the temperature of welding region, finally solder be made to be melted into spherical shape completely.
As shown in Fig. 2, one-dimensional tin copper alloy solder to be melted into spherical process using scanning electron microscope home position heating device.
(a) figure is the scanning electron microscope diagram that heating device directly heats solder, it can be seen that the nano wire solder overwhelming majority is kept
There is thawing phenomenon in line style originally, a small number of regional areas.(b) figure is to be banged using ion beam while heating devices heat
Hit the scanning electron microscope diagram on nanotube-solder surface, it can be seen that nano wire solder is changed into spherical shape by line style rapidly, this is
It is internal since ion beam bombardment eliminates the impurity on solder surface layer, including high-melting-point oxide layer, carbons compound and organic matter etc.
The solder of melting, which has shaken off surface oxide layer and the barrier of impurity, realizes complete thawing from inside to outside.
As shown in figure 3, being characterized for the wetability of selected Sn-Cu solder and tungsten trioxide material in the present embodiment.(a) figure is
Using the bombardment of heating device coupled ion beam by the scanning electron microscope diagram that solder thawing is spherical shape, pass through insulation effect solder
Occur to continue with tungsten trioxide nanowires and strong diffusion, the process can be seen that set temperature keeps solder complete
Melt, but not damaged to dystectic tungsten trioxide nanowires.(b) figure is the scanning electron microscope diagram of (a) figure amplification, can
To find out that the contact angle of selected solder and tungsten trioxide material is less than 90 °, show that wetability is good.
As shown in figure 4, by In Situ Heating device coupled ion Shu Qingxi, it will using one-dimensional gun-metal nanotube-solder
The tungsten trioxide nano figure of T-shape welds together.(a) figure be solder is accurately delivered to using nano-controller it is to be welded
Socket part position ground scanning electron microscope diagram, (b) figure is the scanning electricity of Sn-Cu solder together by T-shape tungstic acid patterned solder
Sub- microscope figure, the welding process in situ heating devices heat silicon chip while, utilize ion beam cleaning welding region, pass through
One section of insulation effect, lasting and strong diffusion occurs for solder and the tungsten trioxide material of melting, so as to form jail
The pad leaned on has achieved the purpose that welding.
Claims (5)
1. a kind of nano-weld method of Electronic Speculum In Situ Heating device combination solder, it is characterised in that include the following steps：
1）Nanotube-solder is delivered to the position to be welded of parent nano material using nano-controller；
2）The silicon chip for carrying parent nano material is in close contact with the heating plate in Electronic Speculum In Situ Heating device,
3）Using the ion beam cleaning position to be welded in SEM-FIB Electronic Speculum, the impurity of welding region surface, the impurity are removed
Including oxide layer, carbons compound and organic matter；
4）In the scanning circumstance of vacuum, heating plate makes the temperature around solder reach preset temperature and keeps the temperature, described
Soaking time is 1-5min；The preset temperature is higher than 30 DEG C of solder melt point, is less than 200 DEG C of fertile material fusing point；Solder is complete
Complete to melt, fertile material is not damaged, achievees the purpose that welding by the diffusion of fusion welding and fertile material.
2. nano-weld method according to claim 1, it is characterised in that the parent nano material is metal or non-
The pattern of metal, parent nano material is zero dimension particle, one-dimensional nano line/stick, two-dimensional nano slice stripe/film.
3. nano-weld method according to claim 1, it is characterised in that the nanotube-solder be elemental metals, two
Member, ternary or multicomponent alloy.
4. nano-weld method according to claim 1, it is characterised in that the pattern of nanotube-solder used is zero dimension
Grain, one-dimensional nano line/stick.
5. nano-weld method according to claim 1, it is characterised in that the angle of wetting of solder and fertile material used is small
In 90 °.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611107702.5A CN106392233B (en) | 2016-12-06 | 2016-12-06 | A kind of nano-weld method of Electronic Speculum In Situ Heating device combination solder |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611107702.5A CN106392233B (en) | 2016-12-06 | 2016-12-06 | A kind of nano-weld method of Electronic Speculum In Situ Heating device combination solder |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN106392233A CN106392233A (en) | 2017-02-15 |
| CN106392233B true CN106392233B (en) | 2018-08-14 |
Family
ID=58083495
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201611107702.5A Expired - Fee Related CN106392233B (en) | 2016-12-06 | 2016-12-06 | A kind of nano-weld method of Electronic Speculum In Situ Heating device combination solder |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106392233B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107262906A (en) * | 2017-06-12 | 2017-10-20 | 天津商业大学 | A kind of Miniature lathe |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2003073448A2 (en) * | 2002-02-22 | 2003-09-04 | Agere Systems, Inc. | Control of semiconductor fabrication process using scanning electron microscopy and a focused ion beam device |
| CN101811662A (en) * | 2010-03-12 | 2010-08-25 | 北京大学 | Method for preparing small-size optical microcavities |
| CN103207102A (en) * | 2013-04-08 | 2013-07-17 | 上海大学 | Method for preparing nanocrystalline from metal glass |
| CN103344790A (en) * | 2013-07-08 | 2013-10-09 | 中国科学院上海硅酸盐研究所 | Nano thermoelectrical Seebeck coefficient in-situ characterization device based on scanning thermal microscope |
| CN105772938A (en) * | 2016-03-18 | 2016-07-20 | 浙江大学 | Nano-welding method adopting welding fluxes on basis of photothermal effect |
-
2016
- 2016-12-06 CN CN201611107702.5A patent/CN106392233B/en not_active Expired - Fee Related
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2003073448A2 (en) * | 2002-02-22 | 2003-09-04 | Agere Systems, Inc. | Control of semiconductor fabrication process using scanning electron microscopy and a focused ion beam device |
| CN101811662A (en) * | 2010-03-12 | 2010-08-25 | 北京大学 | Method for preparing small-size optical microcavities |
| CN103207102A (en) * | 2013-04-08 | 2013-07-17 | 上海大学 | Method for preparing nanocrystalline from metal glass |
| CN103344790A (en) * | 2013-07-08 | 2013-10-09 | 中国科学院上海硅酸盐研究所 | Nano thermoelectrical Seebeck coefficient in-situ characterization device based on scanning thermal microscope |
| CN105772938A (en) * | 2016-03-18 | 2016-07-20 | 浙江大学 | Nano-welding method adopting welding fluxes on basis of photothermal effect |
Non-Patent Citations (4)
| Title |
|---|
| Nanoscale characterization of 1D Sn-3.5Ag nanosolders and their application into nanowelding at the nanoscale;Zhang Hong et al.;《Nanotechnology》;20140930(第45期);第3.2节 * |
| 二氧化钒纳米线相变过程中的偏折现象研究;丁文强等;《电子显微学报》;20141031;第33卷(第5期);第406-412页 * |
| 加强大型仪器开放，促进学生创新研究;李洪云等;《物理通报》;20150731(第7期);第2-4页 * |
| 形变热处理对镍基带退火栾晶的影响;李龙飞;《中国优秀硕士学位论文全文数据库（工程科技Ⅰ辑）》;20160615;第2.3.1节 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN106392233A (en) | 2017-02-15 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US8484837B2 (en) | Method for conductively connecting a component on a transparent substrate | |
| CN107096988B (en) | It is a kind of quickly to prepare electronic package material Cu3The method of Sn intermetallic compound | |
| US11298767B2 (en) | Resistive soldering method, assembly of antenna and glass, and resistive soldering system | |
| CN106392233B (en) | A kind of nano-weld method of Electronic Speculum In Situ Heating device combination solder | |
| JP5844299B2 (en) | Bonding material, bonding structure | |
| JP2019042785A (en) | Junction structure part | |
| US7775416B2 (en) | Microwave brazing process | |
| US7923289B2 (en) | Process for fabricating a semiconductor package | |
| CN105057873A (en) | Method for preparing CuW/Cu/CuCrZr integrated contact through electron beam welding | |
| JP2005514741A (en) | High pressure discharge lamp and method for producing electrode feedthrough of such a lamp | |
| CN109048019A (en) | A kind of welding procedure for Copper-Aluminum compound row | |
| CN102974925A (en) | Method for optimizing aluminum/steel metal inert-gas (MIG) soldered joint through tungsten inert gas (TIG) voltaic arc cooperating with heating | |
| WO2017073299A1 (en) | Ultrasonic soldering method and ultrasonic soldering device | |
| Pawlak et al. | The favorable and unfavorable effects of oxide and intermetallic phases in conductive materials using laser micro technologies | |
| CN107004454B (en) | Method for producing a contact region of a layer of an electric heating device and device for an electric heating device of a motor vehicle | |
| CN107999963A (en) | A kind of coaxial set composite of laser-melting electric arc | |
| CN102935535B (en) | Manual electric soldering bit capable of increasing welding efficiency of lead and bonding pad and improving welding reliability of lead and bonding pad | |
| Nabila et al. | Optimization on laser soldering parameters onto lead-free solder joint | |
| CN108075340A (en) | For contact element to be attached to the method for electric conductor end | |
| CN106077862B (en) | A kind of laser welding-brazing method of extrusion forming | |
| TWI720664B (en) | Solar cell and method for manufacturing solar cell | |
| JP2000216310A (en) | Heat sink and its manufacture | |
| CN105057874A (en) | Method for preparing CuW/Cu/40CrNiMoA integrated contact through electron beam welding | |
| JP3636128B2 (en) | Manufacturing method of semiconductor module | |
| KR20060061327A (en) | Formation method of solder bumps using thin film heater fabricated on ic chip or ic chip wafer and the facility to make the same |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20180814 Termination date: 20191206 |